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Статті в журналах з теми "X-ray Photoemission Spectroscopy (XPS)"
Ekanayaka, Thilini K., Hannah Kurz, Kayleigh A. McElveen, Guanhua Hao, Esha Mishra, Alpha T. N’Diaye, Rebecca Y. Lai, Birgit Weber, and Peter A. Dowben. "Evidence for surface effects on the intermolecular interactions in Fe(ii) spin crossover coordination polymers." Physical Chemistry Chemical Physics 24, no. 2 (2022): 883–94. http://dx.doi.org/10.1039/d1cp04243b.
Повний текст джерелаZhang, Hong-Guang, Yong-Tao Li, Liang Xie, Xue-Guang Dong, and Qi Li. "Annealing temperature dependence of local atomic and electronic structure of polycrystalline La0.5Sr0.5MnO3." International Journal of Modern Physics B 29, no. 03 (January 26, 2015): 1550006. http://dx.doi.org/10.1142/s021797921550006x.
Повний текст джерелаFavaro, Marco, Mattia Cattelan, Stephen W. T. Price, Andrea E. Russell, Laura Calvillo, Stefano Agnoli, and Gaetano Granozzi. "In Situ Study of Graphene Oxide Quantum Dot-MoSx Nanohybrids as Hydrogen Evolution Catalysts." Surfaces 3, no. 2 (June 16, 2020): 225–36. http://dx.doi.org/10.3390/surfaces3020017.
Повний текст джерелаZhu, Menglong, Lu Lyu, Dongmei Niu, Hong Zhang, Shitan Wang, and Yongli Gao. "Effect of a MoO3 buffer layer between C8-BTBT and Co(100) single-crystal film." RSC Advances 6, no. 113 (2016): 112403–8. http://dx.doi.org/10.1039/c6ra23981a.
Повний текст джерелаPetraki, Fotini, Heiko Peisert, Johannes Uihlein, Umut Aygül, and Thomas Chassé. "CoPc and CoPcF16 on gold: Site-specific charge-transfer processes." Beilstein Journal of Nanotechnology 5 (April 25, 2014): 524–31. http://dx.doi.org/10.3762/bjnano.5.61.
Повний текст джерелаEl Jamal, Ghada, Thomas Gouder, Rachel Eloirdi, and Mats Jonsson. "Time-dependent surface modification of uranium oxides exposed to water plasma." Dalton Transactions 50, no. 14 (2021): 4796–804. http://dx.doi.org/10.1039/d1dt00486g.
Повний текст джерелаCha, Myung Joo, Yu Jung Park, Jung Hwa Seo, and Bright Walker. "Depth-dependent electronic band structure at the Au/CH3NH3PbI3−xClx junction." Physical Chemistry Chemical Physics 21, no. 27 (2019): 14541–45. http://dx.doi.org/10.1039/c9cp00834a.
Повний текст джерелаIrfan, Franky So, and Yongli Gao. "Photoemission Spectroscopy Characterization of Attempts to Deposit MoO2Thin Film." International Journal of Photoenergy 2011 (2011): 1–6. http://dx.doi.org/10.1155/2011/314702.
Повний текст джерелаKim, Geonhwa, Youngseok Yu, Hojoon Lim, Beomgyun Jeong, Jouhahn Lee, Jaeyoon Baik, Bongjin Simon Mun, and Ki-jeong Kim. "AP-XPS beamline, a platform for operando science at Pohang Accelerator Laboratory." Journal of Synchrotron Radiation 27, no. 2 (January 28, 2020): 507–14. http://dx.doi.org/10.1107/s160057751901676x.
Повний текст джерелаDevan, Rupesh S., Shun-Yu Gao, Yu-Rong Lin, Shun-Rong Cheng, Chia-Er Hsu, Chia-Hao Chen, Hung-Wei Shiu, Yung Liou, and Yuan-Ron Ma. "Scanning Photoemission Spectromicroscopic Study of 4-nm Ultrathin SiO3.4 Protrusions Probe-Induced on the Native SiO2 Layer." Microscopy and Microanalysis 17, no. 6 (October 11, 2011): 944–49. http://dx.doi.org/10.1017/s1431927611011901.
Повний текст джерелаДисертації з теми "X-ray Photoemission Spectroscopy (XPS)"
Droschke, Sonja. "X-Ray Photoemission Spectroscopy Characterization of Fe(II)- and Fe(III)-Phthalocyanine Molecular Films." Thesis, Uppsala universitet, Molekyl- och kondenserade materiens fysik, 2015. http://urn.kb.se/resolve?urn=urn:nbn:se:uu:diva-257183.
Повний текст джерелаDoran, Brian. "Preparation and characterization of Ribonucleic acid (RNA)/inorganic materials interfaces using photoemission spectroscopy." [Tampa, Fla.] : University of South Florida, 2004. http://purl.fcla.edu/fcla/etd/SFE0000385.
Повний текст джерелаZborowski, Charlotte. "Characterization of deeply buried interfaces by Hard X-ray Photoelectron Spectroscopy." Thesis, Lyon, 2018. http://www.theses.fr/2018LYSEC025/document.
Повний текст джерелаThis thesis aims at improving the inelastic background analysis method in order to apply it to technologically relevant samples. Actually, these improvements are utterly needed as they concern criteria of accuracy and time saving particularly for analysis of devices presenting deeply buried layers with different materials. For this purpose, the interest of the inelastic background analysis method is at its best when combined with hard X-ray photoelectron spectroscopy (HAXPES) because HAXPES allows to probe deeper in the sample than with conventional X-ray photoelectron spectroscopy (XPS). The present work deals with technologically relevant samples, mainly the high-electron mobility transistor (HEMT), at some crucial steps of their fabrication process as annealing. Actually, it is very important that these analyses shall be performed non-destructively in order to preserve the buried interfaces. These are often the location of complex phenomena that are critical for device performances and a better understanding is often a prerequisite for any improvement. In this thesis, the in-depth diffusion phenomena are studied with the inelastic background analysis technique (using the QUASES software) combined with HAXPES for depth up to 60 nm. The depth distribution results are determined with deviations from TEM measurements smaller than a typical value of 5%. The choice of the input parameters of the method is discussed over a large range of samples and simple rules are derived which make the actual analysis easier and faster to perform. Finally, it was shown that spectromicroscopy obtained with the HAXPEEM technique can provide spectra at each pixel usable for inelastic background analysis. This is a proof of principle that it can provide a 3D mapping of the elemental depth distribution with a nondestructive method
Denne afhandling har til formål at forbedre den uelastiske baggrundsanalysemetode til anvendelser i den til teknologiske industri. Faktisk er disse forbedringer absolut nødvendige, for at opnå nøjagtighed og tidsbesparelse, især for analyse af prøver med dybt begravede lag af forskellige materialer. Til det formål er interessen for den uelastiske baggrundsanalysemetode bedst i kombination med hård røntgenfotoelektron-spektroskopi (HAXPES), fordi HAXPES gør det muligt at probe dybere i prøven end med konventionel røntgenfotoelektron-spektroskopi (XPS). Dette arbejde beskæftiger sig med teknologisk relevante prøver, hovedsagelig høj-elektron mobilitetstransistor (HEMT), på nogle afgørende trin i deres fremstillingsproces som fx annealing. Faktisk er det meget vigtigt, at disse analyser udføres på en ikke-destruktiv måde for at bevare de begravede grænseflader. Det er ofte her de komplekse fysiske fænomener opstår, som er kritiske for fuktionaliteten, og en bedre forståelse af grænsefladerne er ofte en forudsætning for at kunne forbedre denne. I denne afhandling studeres de dybdegående diffusionsfænomener med den uelastiske baggrundsanalyse teknik (ved hjælp af QUASES software) kombineret med HAXPES for dybder op til 60 nm. Dybdestributionsresultaterne har afvigelser fra TEM-målinger mindre end en typisk værdi på 5%. Valget af input parametre for metoden er diskuteret på bagground af et stort udvalg af prøver samt omfattende simuleringer og enkle regler er udledt, hvilket gør den praktiske analyse nemmere og hurtigere at udføre. Endelig blev det vist, at spektromikroskopi opnået med HAXPEEM-teknikken kan tilvejebringe spektre ved hver enkelt pixel som kan anvendes til uelastisk baggrundsanalyse. Dette viser at i princippet kan en 3D-billeddannelse af den elementære dybdefordeling bestemmes ikke destruktivt
DRERA, GIOVANNI. "ELECTRONIC STRUCTURE OF TIO2 THIN FILMS AND LAALO3-SRTIO3 HETEROSTRUCTURES: THE ROLE OF TITANIUM 3D1 STATES IN MAGNETIC AND TRANSPORT PROPERTIES." Doctoral thesis, Università degli Studi di Milano, 2012. http://hdl.handle.net/2434/168728.
Повний текст джерелаCaro, Anne-Sophie. "Fonctionnalisation de surfaces d'acier inoxydable afin d'inhiber les premières étapes de formation d'un biofilm." Paris 6, 2008. http://www.theses.fr/2008PA066560.
Повний текст джерелаFoster, Geoffrey M. "DEFECT AND METAL OXIDE CONTROL OF SCHOTTKY BARRIERS AND CHARGE TRANSPORT AT ZINC OXIDE INTERFACES." The Ohio State University, 2018. http://rave.ohiolink.edu/etdc/view?acc_num=osu1524050368601169.
Повний текст джерелаVenturini, Federica. "Soft X-ray photoemission spectroscopy." Université Joseph Fourier (Grenoble), 2005. http://www.theses.fr/2005GRE10175.
Повний текст джерелаThe main motivation behind this thesis has been to determine both the advantages and the disadvantages ofthe soft X-ray application of angle-resolved photoemission spectroscopy. The investigation of a weil known system, Ag(001), enables us to discuss several questions such as the role of the photon momentum, the applicability ofthe fiee-electron-like final state approximation and the role ofphonons. The polarisation of the incoming light has also been exploited. The choice of such a system also cornes from our des ire to compare the results with calculations of angle-resolved photoemission spectra in this energy range. The anomalous low temperature properties of Ce-based compounds are generally related to the Kondo effect. Original results have been obtained by investigating the valence band of three iso-structural single crystalline Ce compounds, CeCu2Ge2, CeNi2Ge2 and CeC02Ge2. The location of the Ce M5 absorption edge within the soft X-ray energy range is exploited in order to isolate the 4f contribution to the spectra. Added to this, the use of relatively high incoming photon energies allows minimising the surface contribution. Temperature dependent, resonant, angle-resolved and angle-integrated photoemission measurements have been performed. The former are in qualitative agreement with the single impurity Anderson model, whereas the latter suggest the importance of taking the lattice into account
Kazzi, Mario Hollinger Guy. "Etude par photoemission (XPS & XPD) d'hétérostructures d'oxydes fonctionnels epitaxies sur silicium." Ecully : Ecole Centrale de Lyon, 2007. http://bibli.ec-lyon.fr/exl-doc/melkazzi.pdf.
Повний текст джерелаKazzi, Mario El. "Etude par photoemission (XPS & XPD) d'hétérostructures d'oxydes fonctionnels epitaxies sur silicium." Ecully, Ecole centrale de Lyon, 2007. http://www.theses.fr/2007ECDL0028.
Повний текст джерелаThis thesis is on one of the main INL axes, the goal of which is to develop the growth procedures of thin oxide single crystal on silicon. These oxides are meant to replace the presently used amorphous gate oxide (SiOxNy and HfSixOyNz) by a high-κ oxide in future “sub 22nm” CMOS. Besides, the interest in controlling the growth of these oxides goes far beyond this oxide gate application. This know-how would be a technological breakthrough to develop monolithic integration on silicon. In this context, the main objective of my thesis has been to study the physico-chemical and structural properties of thin oxide layers grown by Molecular Beam Epitaxy (MBE) on silicon or oxide substrate. We have used X-ray photoelectron spectroscopy (XPS) and X-ray photoelectron diffraction (XPD). First, the stress relaxation of LaAlO3 and BaTiO3 grown on SrTiO3 (001) substrate has been investigated. We have proved that below a critical thickness this two oxides can be grown pseudomorphically and that beyond a plastic relaxation occurs. In addition, we have evidenced that the ferroelectric deformation is strongly enhanced in strained BaTiO3 thin films. Second, we have studied the LaAlO3 growth on Si(001). LaAlO3 is amorphous for growth temperature below 500°C. For higher temperature, the formation of silicates at the interface prevents the crystallization. Thus, an interface engineering strategy has been set up to avoid these interfacial reactions and to succeed an epitaxial growth,. Using SrO, SrTiO3 and Al2O3 as buffer Finally, a comparison of the growth mode and interface stability has been done between Al2O3 and Gd2O3 grown either on Si(111) or Si(001) substrates. Results show that this two oxides grow along the [111] direction on Si(111). However, on Si(001), the growth mechanism is more complex leading to unusual orientations and epitaxial relationships
Doutt, Daniel R. "THE ROLE OF NATIVE POINT DEFECTS AND SURFACE CHEMICAL REACTIONS IN THE FORMATION OF SCHOTTKY BARRIERS AND HIGH N-TYPE DOPING IN ZINC OXIDE." The Ohio State University, 2013. http://rave.ohiolink.edu/etdc/view?acc_num=osu1366199639.
Повний текст джерелаКниги з теми "X-ray Photoemission Spectroscopy (XPS)"
National Institute of Standards and Technology (U.S.), ed. The NIST X-ray photoelectron spectroscopy (XPS) database. Gaithersburg, MD: U.S. Dept. of Commerce, National Institute of Standards and Technology, 1991.
Знайти повний текст джерелаNational Institute of Standards and Technology (U.S.), ed. The NIST X-ray photoelectron spectroscopy (XPS) database. Gaithersburg, MD: U.S. Dept. of Commerce, National Institute of Standards and Technology, 1991.
Знайти повний текст джерелаNational Institute of Standards and Technology (U.S.), ed. The NIST X-ray photoelectron spectroscopy (XPS) database. Gaithersburg, MD: U.S. Dept. of Commerce, National Institute of Standards and Technology, 1991.
Знайти повний текст джерелаCrist, B. Vincent. Handbook of monochromatic XPS spectra. Chichester: John Wiley, 2000.
Знайти повний текст джерелаCultural heritage materials: An XPS approach. New York: Nova Science Publishers, 2012.
Знайти повний текст джерела1948-, Briggs D., ed. High resolution XPS of organic polymers: The Scienta ESCA300 database. Chichester [England]: Wiley, 1992.
Знайти повний текст джерелаJ, Bozak M., Williams J. R, and United States. National Aeronautics and Space Administration., eds. X-ray photoelectron spectroscopy (XPS), Rutherford back scattering (RBS) studies ...: Final report for NAS8-39131 delivery order 7. [Washington, DC: National Aeronautics and Space Administration, 1993.
Знайти повний текст джерелаJ, Bozak M., Williams J. R, and United States. National Aeronautics and Space Administration., eds. X-ray photoelectron spectroscopy (XPS), Rutherford back scattering (RBS) studies ...: Final report for NAS8-39131 delivery order 7. [Washington, DC: National Aeronautics and Space Administration, 1993.
Знайти повний текст джерелаJ, Bozak M., Williams J. R, and United States. National Aeronautics and Space Administration., eds. X-ray photoelectron spectroscopy (XPS), Rutherford back scattering (RBS) studies ...: Final report for NAS8-39131 delivery order 7. [Washington, DC: National Aeronautics and Space Administration, 1993.
Знайти повний текст джерелаGrasserbauer, M. Angewandte Oberflächenanalyse: Mit SIMS Sekundär-Ionen-Massenspektrometrie, AES Auger-Elektronen-Spektrometrie, XPS Röntgen-Photoelektronen-Spektrometrie. Berlin: Springer-Verlag, 1986.
Знайти повний текст джерелаЧастини книг з теми "X-ray Photoemission Spectroscopy (XPS)"
Nelson, A. J. "X-ray Photoemission Spectroscopy." In Microanalysis of Solids, 247–67. Boston, MA: Springer US, 1994. http://dx.doi.org/10.1007/978-1-4899-1492-7_9.
Повний текст джерелаMünder, H. "X-ray photoemission spectroscopy." In Porous Silicon Science and Technology, 277–92. Berlin, Heidelberg: Springer Berlin Heidelberg, 1995. http://dx.doi.org/10.1007/978-3-662-03120-9_16.
Повний текст джерелаBubert, Henning, John C. Rivière, and Wolfgang S. M. Werner. "X-Ray Photoelectron Spectroscopy (XPS)." In Surface and Thin Film Analysis, 7–41. Weinheim, Germany: Wiley-VCH Verlag GmbH & Co. KGaA, 2011. http://dx.doi.org/10.1002/9783527636921.ch2.
Повний текст джерелаQu, Jun, and Harry M. Meyer. "X-Ray Photoelectron Spectroscopy (XPS)." In Encyclopedia of Tribology, 4133–38. Boston, MA: Springer US, 2013. http://dx.doi.org/10.1007/978-0-387-92897-5_1222.
Повний текст джерелаAndrade, Joseph D. "X-ray Photoelectron Spectroscopy (XPS)." In Surface and Interfacial Aspects of Biomedical Polymers, 105–95. Boston, MA: Springer US, 1985. http://dx.doi.org/10.1007/978-1-4684-8610-0_5.
Повний текст джерелаSateesh Kumar, Ch, M. Muralidhar Singh, and Ram Krishna. "X-Ray Photo Spectroscopy (XPS)." In Advanced Materials Characterization, 37–47. Boca Raton: CRC Press, 2023. http://dx.doi.org/10.1201/9781003340546-5.
Повний текст джерелаSchmal, Martin, and Carlos André C. Perez. "X-Ray Photoelectron Spectroscopy (ESCA: XPS/ISS)." In Heterogeneous Catalysis and its Industrial Applications, 251–66. Cham: Springer International Publishing, 2016. http://dx.doi.org/10.1007/978-3-319-09250-8_11.
Повний текст джерелаStorjohann, I., C. Kunz, A. Moewes, J. Voss, and M. Wulf. "Microprobe Photoemission Spectroscopy with the Hamburg Focusing Mirror Scanning Microscope." In X-Ray Microscopy III, 238–40. Berlin, Heidelberg: Springer Berlin Heidelberg, 1992. http://dx.doi.org/10.1007/978-3-540-46887-5_55.
Повний текст джерелаHaasch, Richard T. "X-Ray Photoelectron Spectroscopy (XPS) and Auger Electron Spectroscopy (AES)." In Practical Materials Characterization, 93–132. New York, NY: Springer New York, 2014. http://dx.doi.org/10.1007/978-1-4614-9281-8_3.
Повний текст джерелаTroć, R. "US: X-ray Photoelectron Spectroscopy (XPS) and Photoelectron Spectroscopy (PES)." In Actinide Monochalcogenides, 392–99. Berlin, Heidelberg: Springer Berlin Heidelberg, 2009. http://dx.doi.org/10.1007/978-3-540-47043-4_57.
Повний текст джерелаТези доповідей конференцій з теми "X-ray Photoemission Spectroscopy (XPS)"
Nicolaï, Laurent, and Ján Minár. "XPS limit in soft X-ray photoemission spectroscopy of Ag(001)." In 1ST INTERNATIONAL CONFERENCE ON RADIATIONS AND APPLICATIONS (ICRA-2017). Author(s), 2018. http://dx.doi.org/10.1063/1.5048885.
Повний текст джерелаLiu, Xiao Di, and Dacheng Zhang. "Properties of Nanosized Tin Oxide Thin Film Prepared by Reactive Magnetron Sputtering." In 2007 First International Conference on Integration and Commercialization of Micro and Nanosystems. ASMEDC, 2007. http://dx.doi.org/10.1115/mnc2007-21333.
Повний текст джерелаSugimoto, Takuya, Takashi Mizokawa, Hiroki Wadati, Kou Takubo, Andrea Damascelli, Tom Z. Regier, George A. Sawatzky, et al. "X-ray Photoemission and X-ray Absorption Spectroscopy of Hexagonal Ba3CuSb2O9." In Proceedings of the 12th Asia Pacific Physics Conference (APPC12). Journal of the Physical Society of Japan, 2014. http://dx.doi.org/10.7566/jpscp.1.012122.
Повний текст джерелаChaney, Robert, Robert Cormia, and Ruth Siordia. "X-Ray Photoelectron Spectroscopy (XPS) Applications Using Microfocused X-Rays." In 30th Annual Technical Symposium, edited by Thomas W. Rusch. SPIE, 1986. http://dx.doi.org/10.1117/12.936604.
Повний текст джерелаHamamoto, Satoru, Yuina Kanai-Nakata, Hidenori Fujiwara, Kentaro Kuga, Takayuki Kiss, Atsushi Higashiya, Atsushi Yamasaki, et al. "Linearly Polarized Hard X-Ray Photoemission Spectroscopy of PrBe13." In Proceedings of J-Physics 2019: International Conference on Multipole Physics and Related Phenomena. Journal of the Physical Society of Japan, 2020. http://dx.doi.org/10.7566/jpscp.29.012010.
Повний текст джерелаSato, Hitoshi, Komei Tobimatsu, Arata Tanaka, Hiroyuki Nakamura, Yuki Utsumi, Kojiro Mimura, Satoru Motonami, et al. "Hard X-Ray Photoemission Spectroscopy of Quasi-One-Dimensional BaVS3." In Proceedings of the 12th Asia Pacific Physics Conference (APPC12). Journal of the Physical Society of Japan, 2014. http://dx.doi.org/10.7566/jpscp.1.012116.
Повний текст джерелаKobayashi, K., E. Ikenaga, J. J. Kim, M. Kobata, and S. Ueda. "Nanotechnology and Industrial Applications of Hard X-ray Photoemission Spectroscopy." In SYNCHROTRON RADIATION INSTRUMENTATION: Ninth International Conference on Synchrotron Radiation Instrumentation. AIP, 2007. http://dx.doi.org/10.1063/1.2436358.
Повний текст джерелаHall, Charlotte, Pilar Ferrer, David C. Grinter, Ricardo Grau-Crespo, Georg Held, Maria Retuerto, and Juan Rubio-Zuazo. "An experimental and theoretical study of spinel ferrites, MFe2O4 (M = Co, Zn), by X-ray photoelectron spectroscopy." In Photoemission Spectroscopy for Materials Analysis II, edited by Rosa Arrigo, Robert Palgrave, and Philip D. King. SPIE, 2023. http://dx.doi.org/10.1117/12.2647610.
Повний текст джерелаSaito, Y., J. Iihara, T. Yonemura, K. Yamaguchi, and D. Tsurumi. "Characterization of GaAs Surface State by Hard X-ray Photoemission Spectroscopy." In 2014 International Conference on Solid State Devices and Materials. The Japan Society of Applied Physics, 2014. http://dx.doi.org/10.7567/ssdm.2014.ps-6-4.
Повний текст джерелаRamelan, Ari Handono, Pepen Arifin, and Ewa Goldys. "GaSb quantum dots and its microanalysis using X-ray photoelectron spectroscopy (XPS)." In 2010 International Conference on Nanoscience and Nanotechnology (ICONN). IEEE, 2010. http://dx.doi.org/10.1109/iconn.2010.6045185.
Повний текст джерелаЗвіти організацій з теми "X-ray Photoemission Spectroscopy (XPS)"
Wagner, C. D. NIST x-ray photoelectron spectroscopy (XPS) database. Gaithersburg, MD: National Bureau of Standards, 1990. http://dx.doi.org/10.6028/nist.tn.1289.
Повний текст джерелаKim, Young K., David K. Shuh, R. S. Williams, Larry P. Sadwick, and Kang L. Wang. Electronic Study of Pt-Ga Intermetallic Compounds Using X-Ray Photoemission Spectroscopy. Fort Belvoir, VA: Defense Technical Information Center, July 1990. http://dx.doi.org/10.21236/ada225036.
Повний текст джерелаAnders, S., T. Stammler, C. S. Bhatia, J. Stoehr, W. Fong, C. Y. Chen, and D. B. Bogy. Study of hard disk and slider surfaces using X-ray photoemission electron microscopy and near-edge X-ray absorption fine structure spectroscopy. Office of Scientific and Technical Information (OSTI), April 1998. http://dx.doi.org/10.2172/674744.
Повний текст джерелаHsu, Lishing, Barakat Alavi, David K. Shuh, and R. S. Williams. Electronic-Structure Study of the Na-Ga and Ni-In Intermetallic Compounds Using X-Ray Photoemission Spectroscopy. Fort Belvoir, VA: Defense Technical Information Center, July 1989. http://dx.doi.org/10.21236/ada209696.
Повний текст джерела