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Статті в журналах з теми "Voltage Early"
Hussain, Abadal Salam T., Israa A. Dahham, F. Malek, Qais H. Jeflawi, Jailani O. Mahmoud, Ahmad Zaidi Abdullah, Muhammad Irwanto Misrun, Gomesh Nair Shasidharan, Mohd Irwan Yusoff, and Taha A. Taha. "Early Warning for DC Power Failure System." Applied Mechanics and Materials 793 (September 2015): 124–28. http://dx.doi.org/10.4028/www.scientific.net/amm.793.124.
Повний текст джерелаJahan, M. M., and A. F. M. Anwar. "Early voltage in double heterojunction bipolar transistors." IEEE Transactions on Electron Devices 42, no. 11 (1995): 2028–29. http://dx.doi.org/10.1109/16.469414.
Повний текст джерелаRoulston, D. J. "Early voltage in very-narrow-base bipolar transistors." IEEE Electron Device Letters 11, no. 2 (February 1990): 88–89. http://dx.doi.org/10.1109/55.46937.
Повний текст джерелаPyne, D., and W. S. Khokle. "Analysis of the early voltage in bipolar transistors." IEEE Transactions on Electron Devices 33, no. 10 (October 1986): 1539–44. http://dx.doi.org/10.1109/t-ed.1986.22705.
Повний текст джерелаLiu, Van Tsai, and Jhih Rong Chen. "Balancing for Lead-Acid Batteries of Electric Motorcycles." Applied Mechanics and Materials 764-765 (May 2015): 491–95. http://dx.doi.org/10.4028/www.scientific.net/amm.764-765.491.
Повний текст джерелаPaulik, George F., and Raymond P. Mayer. "Differential Amplifier With Current-Mirror Load: Influence of Current Gain, Early Voltage, and Supply Voltage on the DC Output Voltage." IEEE Transactions on Education 55, no. 2 (May 2012): 233–37. http://dx.doi.org/10.1109/te.2011.2164542.
Повний текст джерелаYuan, J. S., and J. J. Liou. "An improved Early voltage model for advanced bipolar transistors." IEEE Transactions on Electron Devices 38, no. 1 (1991): 179–82. http://dx.doi.org/10.1109/16.65753.
Повний текст джерелаPrevarskaya, N., R. Skryma, P. Vacher, N. Daniel, C. Bignon, J. Djiane, and B. Dufy. "Early effects of PRL on ion conductances in CHO cells expressing PRL receptor." American Journal of Physiology-Cell Physiology 267, no. 2 (August 1, 1994): C554—C562. http://dx.doi.org/10.1152/ajpcell.1994.267.2.c554.
Повний текст джерелаZdravkovic, M., B. Milovanovic, S. Hinic, I. Soldatovic, T. Durmic, G. Koracevic, S. Prijic, O. Markovic, B. Filipovic, and D. Lovic. "Correlation between ECG changes and early left ventricular remodeling in preadolescent footballers." Physiology International 104, no. 1 (March 2017): 42–51. http://dx.doi.org/10.1556/2060.104.2017.1.2.
Повний текст джерелаZhang, Chenmeng, Kailin Zhao, Shijun Xie, Can Hu, Yu Zhang, and Nanxi Jiang. "Research on the Time-Domain Dielectric Response of Multiple Impulse Voltage Aging Oil-Film Dielectrics." Energies 14, no. 7 (April 1, 2021): 1948. http://dx.doi.org/10.3390/en14071948.
Повний текст джерелаДисертації з теми "Voltage Early"
Andrade, Maria Glória Caño de. "Estudo de transistores de porta tripla de corpo." Universidade de São Paulo, 2012. http://www.teses.usp.br/teses/disponiveis/3/3140/tde-10062013-150025/.
Повний текст джерелаThe main goal of this work is to investigate the n-channel MuGFETs (triple-gate) Bulk transistors with and without the application of DTMOS operation. This work will be done through three-dimensional numerical simulation and by electrical characterizations. The drain current, transconductance, resistance, threshold voltage, subthreshold swing and Drain Induced Barrier Lowering (DIBL) will be analyzed in the DTMOS mode and the standard biasing configuration. Important figures of merit for the analog performance such as transconductance-over-drain current, output conductance, Early voltage and intrinsic voltage gain will be studied experimentally and through three-dimensional numerical simulations for different channel doping concentrations. The results indicate that the DTMOS configuration has superior electrical characteristics (4 e 10 %) and higher transistor efficiency. In addition, DTMOS devices with a high channel doping concentration exhibit much better analog performance compared to the normal operation mode. Low-Frequency (LF) noise is for the first time experimentally investigated in linear and saturation region. The origin of the noise will be analyzed in order to understand the physical mechanisms involved in this type of noise. Measurements showed that the signal spectra for Bulk and DTMOS are composed of number fluctuations related flicker noise with on top generation and recombination noise humps, which become more pronounced at higher gate voltage. However, the most important finding is the fact that DTMOS devices showed practically the same LF noise magnitude in linear and saturation region than standard Bulk device. Proton irradiation with energy of 60 MeV and fluence of p/1012 cm-2 is also experimentally studied in terms of electric characteristic, analog performance and the LF noise in Bulk and DTMOS triple gate devices. The results indicate that the combined of the better electrical characteristics and an excellent analog performance of DTMOS devices, makes it a very competitive candidate for low-noise RF analog applications before and after irradiation. The advantage of dynamic threshold voltage in triple gate transistors in environments where the devices have to withstand high-energy radiation is due to its lower drain electric field penetration that lowers the effect of the radiation-induced charges in the STI (shallow trench isolation) regions adjacent to the fin. Finally, the n-channel triple gate Bulk device is used for memory application, that is, 1T-DRAM (Dynamic Random Access Memory with 1 Transistor). Bipolar junction transistor (BJT) programming mode is used to write and read 1 while the forward biasing of the body-drain junction is used to write 0. The reading and writing current increases with increasing body bias (VB) because the load induced by the BJT effect is stored within the fin. When the body of the transistor is floating, the device retains more charge within its fin. In addition, transistor could also operate as 1T-DRAM with both gate and bulk contacts floating, which is similar to the biristor (gateless) behavior.
Ndoye, Mamadou Mustapha. "Contribution à l'étude du transistor bipolaire hyperfréquence sur puce de silicium." Bordeaux 1, 1997. http://www.theses.fr/1997BOR10682.
Повний текст джерелаThis work is a contribution to the study of the high-speed bipolar transistor on silicon chip. First, it presents two original methods allowing to reduce the Base-Collector extrinsic Capacitance, to increase the Base-Collector breakdown voltage, to increase the Voltage Early VA, to increase the maximum power gain Gpmax and to increase the transition frequency FT. Then, it presents a new transistor, hybrid structure between the vertical NPN and the lateral NPN, named bipolar-CLEV (lateral collector-vertical emitter). This study can be generalized to other high speed transistor technologies such as III-V substrate transistors or heterojunction transistors
Ndoye, Mamadou Moustapha. "Contribution à l'étude du transistor bipolaire hyperfréquence sur puce de silicium." Bordeaux 1, 1997. http://www.theses.fr/1997BOR10688.
Повний текст джерелаThis work is a contribution to the study of the high-speed bipolar transistor on silicon chip. First, it presents two original methods allowing to reduce the Base-Collector extrinsic Capacitance, to increase the Base-Collector breakdown voltage, to increase the Voltage Early VA, to increase the maximum power gain Gpmax and to increase the transition frequency FT. Then, it presents a new transistor, hybrid structure between the vertical NPN and the lateral NPN, named bipolar-CLEV (lateral collector-vertical emitter). This study can be generalized to other high speed transistor technologies such as III-V substrate transistors or heterojunction transistors
Schui, Florian Heinrich Werner. "Early debates about 'industrie' : Voltaire and his contemporaries, c.1750-1778." Thesis, University of Cambridge, 2004. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.615974.
Повний текст джерелаFasseira, Mônica Yohana Alves [UNESP]. "Cartografia escolar na educação infantil: descobrindo o mundo à sua volta." Universidade Estadual Paulista (UNESP), 2016. http://hdl.handle.net/11449/147052.
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Coordenação de Aperfeiçoamento de Pessoal de Nível Superior (CAPES)
Esta pesquisa surge a partir das inquietações vividas pela autora, quando lecionou em uma escola de Educação Infantil, onde foi possível observar algumas dificuldades das demais professoras em mediar conceitos da Geografia e da Cartografia, inseridos na temática “Natureza e sociedade”, contidos no cotidiano escolar dos alunos dessa etapa. Dentre os questionamentos que surgem ao pensar o percurso do processo de ensino e aprendizagem, em relação aos conteúdos geográficos e cartográficos, vem a necessidade de compreender de que maneira se desenvolvem as aquisições das noções de tempo e espaço durante os primeiros anos da infância. Diante deste desafio, o objetivo da pesquisa consistiu em apresentar uma sequência didática, com propostas de atividades pedagógicas para compor planos de aula direcionados a crianças de 4 e 6 anos da Educação Infantil, auxiliando no entendimento de conceitos geográficos. Para isso, foram realizadas observações e análises da rotina pedagógica junto à turma do “Grupo 4” (crianças de 4 anos a 6 anos), do Centro de Convivência Infantil da Unesp de Rio Claro/SP. Em busca de compreender a estrutura do pensamento das crianças, suas ações e reações, percepção espacial e suas experiências adquiridas junto ao meio em que vivem, este trabalho foi pautado em obras de Vygotsky e sua teoria de zona de desenvolvimento proximal, processo de mediação e o desenvolvimento sociocultural do indivíduo. Diversas atividades foram desenvolvidas, tendo como resultado uma sequência didática composta por planos de aula elaborados, tendo como tema principal, o “Sistema Solar”, possibilitando trabalhar os conceitos “Dia e noite – interação entre o planeta Terra e o Sol”, “Lua e o planeta Terra – características da Lua e o eclipse” e, finalizando, “As quatro estações do ano – movimento de translação e as interferências sobre a Terra”.
This research comes from the worries experienced by the author while teaching in a Primary School, where it was possible to observe some difficulties that the other teachers had to mediate concepts about Geography and Cartography, both part of the theme “Nature and society”, included in the school routine of the students in such stage. Among the questions that arise when thinking about the course of the teaching and learning process, related to the geographic and cartographic contents, it becomes necessary to understand how the acquisition of notions about time and space are developed in the first years of the childhood. Facing this challenge, the main goal of this research was to present a didactic sequence, with proposals of pedagogical activities to form lesson plans for children from 4 to 6 years old, in the Early Childhood Education, helping them during the understanding of the geographic concepts. In order to do that, observations and analysis of the pedagogical routine with the students were performed in “Group 4” (children from 4 to 6 years old), from the Centro de Convivência Infantil of Unesp, Rio Claro/SP. Seeking to comprehend the structure of children’s thoughts, their actions and reactions, space perception and the experience acquired within the environment where they live, this work was based on Vygotsky’s studies and his theory about the zone of proximal development, the mediation process, and the sociocultural development of the individual. Many activities were developed with them, having as result a didactic sequence composed of elaborated lesson plans. The main theme was “The Solar System”, which made possible to work on the concepts “Day and night – interaction between the Earth and the Sun”, “The Moon and the Earth – Moon features and the eclipse” and, to conclude, “The four seasons of the year – the revolution movement and its interferences on Earth”.
Pink, Gillian. "Voltaire a l'ouvrage : une etude de ses traces de lecture et de ses notes marginales." Thesis, University of Oxford, 2014. http://ora.ox.ac.uk/objects/uuid:e966ead9-fa18-4a51-b4f4-8212a8821320.
Повний текст джерелаAbiven, Karine. "L’Anecdote ou la fabrique du petit fait vrai. Un genre de récit miniature, de Tallemant des Réaux à Voltaire (1650-1756)." Thesis, Paris 4, 2012. http://www.theses.fr/2012PA040134.
Повний текст джерелаThe purpose of this work is to define the characteristics of the anecdote, understood as a short non fictitious narrative, from the middle of the 17th century. In that period the anecdote enjoyed a wide popularity amongst scholars and high society, while it became an historiographic form in Memoirs of the court. The analysis of a series of examples taken from Memoirs, Lives and Ana (i.e. collections of thoughts and anecdotes) enables us to outline a textual pattern. In spite of the likeness it bears to the exemplum, the jest and the apothegm, the anecdote differs by its claim to truthfulness. This particularity appears to be essential in the context of a profound transformation of historical and biographical rhetoric, which evolves towards a deeper interest in the individual and the authentic detail. However this aspiration to truthfulness is limited by other characteristics of the anecdote. Insofar as it aims to provoke an emotional reaction (such as laughter or surprise), the anecdote is also linked to more inventive forms (for instance fiction, joke, satire). Besides it is designed for circulation and doesn’t belong to a single author: its oral origin is altered by the process of writing, collecting and compilating. To describe a poetic and rhetoric of this genre, we intend to analyse its linguistic characteristics, the paths of its circulation, and its paradoxical way of producing a truthful statement on the individual. Our work takes part in the history of literary forms and aims to show that the anecdote has replaced ancient forms of brief narratives in early modern French literature and historiography
Brereton, Mary Catherine. "Philosophic historiography in the eighteenth century in Britain and France." Thesis, University of Oxford, 2007. http://ora.ox.ac.uk/objects/uuid:e134dabe-301d-4e81-a282-8c2204499fbb.
Повний текст джерелаAvci, Mehmet. "Early Dual Grid Voltage Integrity Verification." Thesis, 2010. http://hdl.handle.net/1807/25414.
Повний текст джерелаWANG, YU-WEI, and 王昱崴. "Early-Voltage Variation and Dependence of VT Implant for n-type FinFETs." Thesis, 2016. http://ndltd.ncl.edu.tw/handle/47365866755668715959.
Повний текст джерела明新科技大學
電子工程系碩士班
104
Planar field effect transistors in semiconductor industry have been used for a long time, playing a main role in the past. Since the process technology is promoted, the shrinkage of device profile is well done. However, this technology gradually approaches the physical limitation. Most of researchers or scientists seek the other available alternatives. A fin field effect transistor (FinFET) device seems a good choice in this process era. In this study, the FinFETs compared to the conventional planar field-effect transistors, increasing the transistor channel width (Wfin + 2Hfin), which is to make the drive current. This transistor device is formed on the Unibond SOI wafer structure, a channel thickness of about 80 nm deposited as Si crystalline layer. Using the hard mask, the Si-fin can be fabricated. To improve the drive current, FinFETs possibly offer the multi-channel scheme instead of the single-channel device. In this experiment, the channel-length modulation (CLM) is applied to explore the Early voltage (VA) in a FinFET device, which the L/L change is caused from the horizontal and vertical field of dependency in channel. Furthermore, the VA values for single or multi-channel FinFETs are related to the device profile, the temperature stress, and the VT implant energy. These relationships will also be investigated. Due to these efforts, the suitable device models will be provided to the IC design customers. In this measurement test, there is more influence to the VA as the tested device is single-channel mode operated at the lower electrical field (VGS-VT). For multi-channel tested devices, the VA is impacted obviously at the middle field or higher. As the stress temperature is increased, the channel lengths are different, or the VT implant energies are not the same, the VA is indeed influenced. However, the trend is not easy to be classified well. The speculation is possibly when the device profile is shrunk, the uniformity of VT implant is not optimally approached to cause the channel electrical field is not easy to be controlled well.
Книги з теми "Voltage Early"
Early debates about industry: Voltaire and his contemporaries. Houndmills, Basingstoke, Hampshire: Palgrave Macmillan, 2005.
Знайти повний текст джерелаCandaux, Jean-Daniel. Voltaire imprimé tout vif: Un choix d'éditions suisses, 1723-1778. Genève: Bibliothèque publique et universitaire, 1994.
Знайти повний текст джерелаVoltaire. Voltaire: Selections. New York: Macmillan, 1989.
Знайти повний текст джерелаVoltaire. Political writings. Cambridge [England]: Cambridge University Press, 1994.
Знайти повний текст джерелаGil, Linda. L'édition Kehl de Voltaire: Une aventure éditoriale et littéraire au tournant des Lumières. Paris: Honoré Champion éditeur, 2018.
Знайти повний текст джерелаVoltaire. Cándido. C.P. México: Lectorum, 2006.
Знайти повний текст джерелаVoltaire. Voltaire: Candide, ou, L'optimisme : suivi du texte apocryphe de 1760. [Paris?]: Magnard, 1985.
Знайти повний текст джерелаBatori, Armida. Il libro antico: Problemi di indicizzazione. Napoli: Istituto Italiano per gli Studi Filosofici, 1993.
Знайти повний текст джерелаVoltaire. Candide. Oxford: Inky Parrot Press, 1985.
Знайти повний текст джерелаVoltaire. Candide ou, L'optimisme: Conte (philosophique) ou roman. Paris: Larousse-Bordas, 1998.
Знайти повний текст джерелаЧастини книг з теми "Voltage Early"
Carbone, Emilio. "A Lived History of Early Calcium Channel Discoveries Over the Past Half-Century." In Voltage-Gated Calcium Channels, 1–28. Cham: Springer International Publishing, 2022. http://dx.doi.org/10.1007/978-3-031-08881-0_1.
Повний текст джерелаChrzan, Krystian Leonard. "Early Streamer Emission Terminals from the High Voltage Engineering Perspective." In Lecture Notes in Electrical Engineering, 773–83. Cham: Springer International Publishing, 2019. http://dx.doi.org/10.1007/978-3-030-31680-8_75.
Повний текст джерелаMiyachi, Ei-ichi, and Fusao Kawai. "Voltage-Gated Ion Channels in Human Photoreceptors: Na+ and Hyperpolarization-Activated Cation Channels." In The Neural Basis of Early Vision, 5–14. Tokyo: Springer Japan, 2003. http://dx.doi.org/10.1007/978-4-431-68447-3_4.
Повний текст джерелаOhkuma, Mahito, Fusao Kawai, and Ei-Ichi Miyachi. "Suppression by Odorants of Voltage-Gated and Ligand-Gated Channels in Retinal Neurons." In The Neural Basis of Early Vision, 143–46. Tokyo: Springer Japan, 2003. http://dx.doi.org/10.1007/978-4-431-68447-3_53.
Повний текст джерелаZhao, Tieying, and Na Wang. "Research on Low-Voltage Early Warning System of Coalmine Power Grid." In Electrical, Information Engineering and Mechatronics 2011, 1003–9. London: Springer London, 2012. http://dx.doi.org/10.1007/978-1-4471-2467-2_118.
Повний текст джерелаMiyakawa, Naohisa, Katsushige Sato, Hiraku Mochida, Shinichi Sasaki, and Yoko Momose-Sato. "Functional Mapping of Neural Activity in the Embryonic Avian Visual System: Optical Recording with a Voltage-Sensitive Dye." In The Neural Basis of Early Vision, 194–98. Tokyo: Springer Japan, 2003. http://dx.doi.org/10.1007/978-4-431-68447-3_68.
Повний текст джерелаZhang, Zeyu, Xizhong Li, Xuan Fei, Xin Cao, and Qian Xu. "Research on Low Voltage Early Warning of Distribution Network Based on Improved DNN-LSTM Algorithm." In Communications in Computer and Information Science, 572–84. Singapore: Springer Singapore, 2021. http://dx.doi.org/10.1007/978-981-16-3150-4_47.
Повний текст джерелаDuan, Zhengjian. "High Voltage Power Communication Network Security Early Warning and Monitoring System Based on HMAC Algorithm." In Machine Learning for Cyber Security, 366–79. Cham: Springer Nature Switzerland, 2023. http://dx.doi.org/10.1007/978-3-031-20096-0_28.
Повний текст джерелаKatagiri, Nobuko, Yuichi Simatani, Tatsuo Arii, and Yasuo Katagiri. "Extraocular Photoreception of a Marine Gastropoda, Onchidium: Three-Dimensional Analysis of the Axons of Dermal Photoreceptor Cells in the Dorsal Mantle Examined with a High-Voltage Electron Microscope." In The Neural Basis of Early Vision, 86–90. Tokyo: Springer Japan, 2003. http://dx.doi.org/10.1007/978-4-431-68447-3_33.
Повний текст джерелаKamino, K., T. Sakai, Yoko Momose-Sato, H. Komuro, A. Hirota, and K. Sato. "Optical Monitoring of Postsynaptic Potential in the Early Embryonic Avian Brain Stem Using a Voltage-Sensitive Dye." In Fluorescence Spectroscopy, 291–303. Berlin, Heidelberg: Springer Berlin Heidelberg, 1993. http://dx.doi.org/10.1007/978-3-642-77372-3_21.
Повний текст джерелаТези доповідей конференцій з теми "Voltage Early"
Avci, Mehmet, and Farid N. Najm. "Early P/G grid voltage integrity verification." In 2010 IEEE/ACM International Conference on Computer-Aided Design (ICCAD). IEEE, 2010. http://dx.doi.org/10.1109/iccad.2010.5653904.
Повний текст джерелаJamroen, Chaowanan, and Sanchai Dechanupaprittha. "Synchrophasor based early-warning voltage instability index." In 2017 IEEE Manchester PowerTech. IEEE, 2017. http://dx.doi.org/10.1109/ptc.2017.7981164.
Повний текст джерелаParks, Harold. "High Voltage Divider Calibration with the Reference Step Method." In NCSL International Workshop & Symposium. NCSL International, 2015. http://dx.doi.org/10.51843/wsproceedings.2015.22.
Повний текст джерелаAllen, N. L. "Simulation of an early streamer emission air terminal for application to lightning protection." In 11th International Symposium on High-Voltage Engineering (ISH 99). IEE, 1999. http://dx.doi.org/10.1049/cp:19990631.
Повний текст джерелаZheng, Jiankang, Shuangrui Jia, Liang Ma, Geng Li, Xiaoting Su, Hanfeng Wang, and Shaobin Li. "Research on Early Warning of Cable Fire Based on Gas Sensor." In 2022 IEEE International Conference on High Voltage Engineering and Applications (ICHVE). IEEE, 2022. http://dx.doi.org/10.1109/ichve53725.2022.9961691.
Повний текст джерелаConrad, Eduardo, Fernando Paixão Cortes, Sergio Bampi, and Alessandro Girardi. "Early voltage and saturation voltage improvement in deep sub-micron technologies using associations of transistors." In the twenty-first annual symposium. New York, New York, USA: ACM Press, 2008. http://dx.doi.org/10.1145/1404371.1404406.
Повний текст джерелаMartino, M. D. V., F. S. Neves, P. G. D. Agopian, J. A. Martino, A. Vandooren, R. Rooyackers, E. Simoen, A. Thean, and C. Claeys. "Early voltage and intrinsic voltage gain in vertical nanowire-TFETs as a function of temperature." In 2014 International Caribbean Conference on Devices, Circuits and Systems (ICCDCS). IEEE, 2014. http://dx.doi.org/10.1109/iccdcs.2014.7016154.
Повний текст джерелаMutzel, Timo, Frank Berger, and Michael Anheuser. "Methods of Early Short-Circuit Detection for Low-Voltage Systems." In 2008 IEEE Holm Conference on Electrical Contacts (Holm 2008). IEEE, 2008. http://dx.doi.org/10.1109/holm.2008.ecp.44.
Повний текст джерелаWeckesser, Tilman, Hjortur Johannsson, and Thierry Van Cutsem. "Early prediction of transient voltage sags caused by rotor swings." In 2014 IEEE Power & Energy Society General Meeting. IEEE, 2014. http://dx.doi.org/10.1109/pesgm.2014.6939106.
Повний текст джерелаYing, Wen, Canny Chen, and Kelly Yang. "A Voltage Screen Model and Method for Early Failure Screening." In 2022 China Semiconductor Technology International Conference (CSTIC). IEEE, 2022. http://dx.doi.org/10.1109/cstic55103.2022.9856804.
Повний текст джерелаЗвіти організацій з теми "Voltage Early"
Llanes, Rodrigo, Nikita Dougan, Ken Le, Matthew Halligan, Ross Guttromson, Jane Lehr, and David Sanabria. Early-Time (E1) High-Altitude Electromagnetic Pulse Effects on Transient Voltage Surge Suppressors. Office of Scientific and Technical Information (OSTI), October 2020. http://dx.doi.org/10.2172/1769004.
Повний текст джерелаEffect of Spark Discharge Duration and Timing on the Combustion Initiation in a Lean Burn SI Engine. SAE International, April 2021. http://dx.doi.org/10.4271/2021-01-0478.
Повний текст джерела