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Статті в журналах з теми "Transistors HEMT"
Amar, Abdelhamid, Bouchaïb Radi, and Hami El Abdelkhalak. "Electrothermal Reliability of the High Electron Mobility Transistor (HEMT)." Applied Sciences 11, no. 22 (November 13, 2021): 10720. http://dx.doi.org/10.3390/app112210720.
Повний текст джерелаMrvić, Jovan, and Vladimir Vukić. "Comparative analysis of the switching energy losses in GaN HEMT and silicon MOSFET power transistors." Zbornik radova Elektrotehnicki institut Nikola Tesla 30, no. 30 (2020): 93–109. http://dx.doi.org/10.5937/zeint30-29318.
Повний текст джерелаKuliev, M. V. "Influence of the Heterostructure Composition on the Long-Term Stability of a Microwave Oscillator." Nano- i Mikrosistemnaya Tehnika 24, no. 1 (February 22, 2022): 27–29. http://dx.doi.org/10.17587/nmst.24.27-29.
Повний текст джерелаZhelannov, Andrei V., Boris I. Seleznev, and Dmitry G. Fedorov. "Study of Characteristics of HEMT-Transistors Based on AlGaN/GaN Heterostructure." Nano Hybrids and Composites 28 (February 2020): 149–54. http://dx.doi.org/10.4028/www.scientific.net/nhc.28.149.
Повний текст джерелаСоловьев, А. А. "МЕТОДИКА ИЗМЕРЕНИЯ ХАРАКТЕРИСТИК И ПОСТРОЕНИЕ МОДЕЛИ СВЧ ПОЛЕВОГО ТРАНЗИСТОРА С ИСПОЛЬЗОВАНИЕМ САПР KEYSIGHT EESOF". NANOINDUSTRY Russia 96, № 3s (15 червня 2020): 708–11. http://dx.doi.org/10.22184/1993-8578.2020.13.3s.708.711.
Повний текст джерелаSleptsova, Anastasia A., Sergey V. Chernykh, Dmitry A. Podgorny, and Ilya A. Zhilnikov. "Optimization of passivation in AlGaN/GaN heterostructure microwave transistor fabrication by ICP CVD." Modern Electronic Materials 6, no. 2 (July 15, 2020): 71–75. http://dx.doi.org/10.3897/j.moem.6.2.58860.
Повний текст джерелаSalmanogli, Ahmad. "Squeezed state generation using cryogenic InP HEMT nonlinearity." Journal of Semiconductors 44, no. 5 (May 1, 2023): 052901. http://dx.doi.org/10.1088/1674-4926/44/5/052901.
Повний текст джерелаRyndin, Eugeny A., Amgad A. Al-Saman, and Boris G. Konoplev. "A Quasi-Two-Dimensional Physics-Based Model of HEMTs without Smoothing Functions for Joining Linear and Saturation Regions of I-V Characteristics." Active and Passive Electronic Components 2019 (April 1, 2019): 1–9. http://dx.doi.org/10.1155/2019/5135637.
Повний текст джерелаSARKOZY, S., X. MEI, W. YOSHIDA, P. H. LIU, M. LANGE, J. LEE, Z. ZHOU, et al. "AMPLIFIER GAIN PER STAGE UP TO 0.5 THz USING 35 NM InP HEMT TRANSISTORS." International Journal of High Speed Electronics and Systems 20, no. 03 (September 2011): 399–404. http://dx.doi.org/10.1142/s0129156411006684.
Повний текст джерелаLi, Zijian. "Advancements in GaN HEMT structures and applications: A comprehensive overview." Journal of Physics: Conference Series 2786, no. 1 (June 1, 2024): 012003. http://dx.doi.org/10.1088/1742-6596/2786/1/012003.
Повний текст джерелаДисертації з теми "Transistors HEMT"
Gonçalves, Cristiano Ferreira. "GaN HEMT transistors characterization for non–linear modelling." Master's thesis, Universidade de Aveiro, 2016. http://hdl.handle.net/10773/21677.
Повний текст джерелаUltimamente, as redes de telecomunicações móveis estão a exigir cada vez maiores taxas de transferência de informação. Com este aumento, embora sejam usados códigos poderosos, também aumenta a largura de banda dos sinais a transmitir, bem como a sua frequência. A maior frequência de operação, bem como a procura por sistemas mais eficientes, tem exigido progressos no que toca aos transístores utilizados nos amplificadores de potência de radio frequência (RF), uma vez que estes são componentes dominantes no rendimento de uma estação base de telecomunicações. Com esta evolução, surgem novas tecnologias de transístores, como os GaN HEMT (do inglês, Gallium Nitride High Electron Mobility Transistor). Para conseguir prever e corrigir certos efeitos dispersivos que afetam estas novas tecnologias e para obter o amplificador mais eficiente para cada transístor usado, os projetistas de amplificadores necessitam cada vez mais de um modelo que reproduza fielmente o comportamento do dispositivo. Durante este trabalho foi desenvolvido um sistema capaz de efetuar medidas pulsadas e de elevada exatidão a transístores, para que estes não sejam afetados, durante as medidas, por fenómenos de sobreaquecimento ou outro tipo de fenómenos dispersivos mais complexos presentes em algumas tecnologias. Desta forma, será possível caracterizar estes transístores para um estado pré determinado não só de temperatura, mas de todos os fenómenos presentes. Ao longo do trabalho vai ser demostrado o projeto e a construção deste sistema, incluindo a parte de potência que será o principal foco do trabalho. Foi assim possível efetuar medidas pulsadas DC-IV e de parâmetros S (do inglês, Scattering) pulsados para vários pontos de polarização. Estas últimas foram conseguidas á custa da realização de um kit de calibração TRL. O interface gráfico com o sistema foi feito em Matlab, o que torna o sistema mais fácil de operar. Com as medidas resultantes pôde ser obtida uma primeira análise acerca da eficiência, ganho e potência máxima entregue pelo dispositivo. Mais tarde, com as mesmas medidas pôde ser obtido um modelo não linear completo do dispositivo, facilitando assim o projeto de amplificadores.
Lately, the wireless networks should feature higher data rates than ever. With this rise, although very powerful codification schemes are used, the bandwidth of the transmitted signals is rising, as well as the frequency. Not only caused by this rise in frequency, but also by the growing need for more efficient systems, major advances have been made in terms of Radio Frequency (RF) Transistors that are used in Power Amplifiers (PAs), which are dominant components in terms of the total efficiency of base stations (BSS). With this evolution, new technologies of transistors are being developed, such as the Gallium Nitride High Electron Mobility Transistor (GaN HEMT). In order to predict and correct some dispersive effects that affect these new technologies and obtain the best possible amplifier for each different transistor, the designers are relying more than ever in the models of the devices. During this work, one system capable of performing very precise pulsed measurements on RF transistors was developed, so that they are not affected, during the measurements, by self-heating or other dispersive phenomena that are present in some technologies. Using these measurements it was possible to characterize these transistors for a pre-determined state of the temperature and all the other phenomena. In this document, the design and assembly of the complete system will be analysed, with special attention to the higher power component. It will be possible to measure pulsed Direct Current Current-Voltage (DC-IV) behaviour and pulsed Scattering (S) parameters of the device for many different bias points. These latter ones were possible due to the development of one TRL calibration kit. The interface with the system is made using a graphical interface designed in Matlab, which makes it easier to use. With the resulting measurements, as a first step analysis, the maximum efficiency, gain and maximum delivered power of the device can be estimated. Later, with the same measurements, the complete non-linear model of the device can be obtained, allowing the designers to produce state-of-art RF PAs.
Grémion, Emile. "Transistor balistique quantique et HEMT bas-bruit pour la cryoélectronique inférieure à 4. 2 K." Paris 11, 2008. http://www.theses.fr/2008PA112017.
Повний текст джерелаNext generations of cryodetectors, widely used in physics of particles and physics of universe, will need in the future high-performance cryoelectronics less noisy and closer to the detector. Within this context, this work investigates properties of two dimensional electron gas GaAlAs/GaAs by studying two components, quantum point contact (QPC) and high electron mobility transistor (HEMT). Thanks to quantized conductance steps in QPC, we have realized a quantum ballistic transistor (voltage gain higher than 1), a new component useful for cryoelectronics thanks to its operating temperature and weak power consumption (about 1 nW). Moreover, the very low capacity of this component leads to promising performances for multiplexing low temperature bolometer dedicated to millimetric astronomy. The second study focused on HEMT with very high quality 2DEG. At 4. 2 K, a voltage gain higher than 20 can be obtained with a very low power dissipation of less than 100 μW. Under the above experimental conditions, an equivalent input voltage noise of 1. 2 nV/Hz^(1/2) at 1 kHz and 0. 12 nV/Hz^(1/2) at 100 kHz has been reached. According to the Hooge formula, these noise performances are get by increasing gate capacity estimated to 60 pF
Callet, Guillaume. "Caractérisation et modélisation de transistors HEMT AlGaN/GaN et InAlN/GaN pour l’amplification de puissance en radio-fréquences." Limoges, 2011. https://aurore.unilim.fr/theses/nxfile/default/3c0fde17-3720-49cd-9824-bd071826245e/blobholder:0/2011LIMO4033.pdf.
Повний текст джерелаThis report deals with the characterization of GaN HEMTs devices in order to create their model. An exhaustive characterization has been realized for AlInN/GaN and AlGaN/GAN based HEMTs. A special care has been given to the different thermal characterization methods, with the use of the 3ω method for the measurement of the thermal impedance. A study of scaling rules for small-signal model is presented. The non-linear model presented is developed in order to extend his application domain to the power amplification and power switches. Finally it is used in the design of the first poser amplifier base on AlInN technology in Ka-band
Yu, Tsung-Hsing. "Numerical studies of heterojunction transport and High Electron Mobility Transistor (HEMT) devices." Diss., Georgia Institute of Technology, 2002. http://hdl.handle.net/1853/13035.
Повний текст джерелаChen, Lu. "Computerized evaluation of parameters for HEMT DC and microwave S parameter models." Ohio : Ohio University, 1995. http://www.ohiolink.edu/etd/view.cgi?ohiou1179518920.
Повний текст джерелаGreco, Giuseppe. "AlGaN/GaN heterostructures for enhancement mode transistors." Doctoral thesis, Università di Catania, 2013. http://hdl.handle.net/10761/1347.
Повний текст джерелаSadek-Hage, Chehade Sawsan. "Microcapteurs hybrides et monolithiques en technologies MESFETet HEMT : applications cinémométriques." Lille 1, 1996. https://pepite-depot.univ-lille.fr/LIBRE/Th_Num/1996/50376-1996-133.pdf.
Повний текст джерелаKim, Hyeong Nam. "Qualitative and Quantative Characterization of Trapping Effects in AlGaN/GaN High Electron Mobility Transistors." The Ohio State University, 2009. http://rave.ohiolink.edu/etdc/view?acc_num=osu1250612796.
Повний текст джерелаDivay, Alexis. "Etude de la fiabilité à long terme des transistors HEMT à base de GaN." Rouen, 2015. http://www.theses.fr/2015ROUES054.
Повний текст джерелаAlGaN/GaN HEMTs are on their way to become a reference technology for high power and high frequency applications. However, the lack of feedback regarding the reliability of such devices can be felt by the defense, automotive and telecommunications industrialists because of its lack of maturity. This study deals with the long term reliability of power AlGaN/GaN HEMTs in RADAR operating mode. It is based upon electrical characterizations, the development of an athermal measurement technique for traps and RF stresses on an ageing bench. The sum of all the characterizations before, during and after the ageing tests as well as micro-structural analyses allows to define hypotheses regarding the physical origin of the performance drift of such components
Fonder, Jean baptiste. "Analyse des mécanismes de défaillance dans les transistors de puissance radiofréquences HEMT AlGaN/GaN." Phd thesis, Université de Cergy Pontoise, 2012. http://tel.archives-ouvertes.fr/tel-00765251.
Повний текст джерелаКниги з теми "Transistors HEMT"
Lee, Ross R., Svensson Stefan P, and Lugli P. 1956-, eds. Pseudomorphic HEMT technology and applications. Dordrecht: Kluwer Academic, 1996.
Знайти повний текст джерелаQ, Lee Richard, and United States. National Aeronautics and Space Administration., eds. Planar dielectric resonator stabilized HEMT oscillator integrated with CPW/aperture coupled patch antenna. [Washington, D.C.]: National Aeronautics and Space Administration, 1991.
Знайти повний текст джерелаFreeman, Jon C. Basic equations for the modeling of gallium nitride (GaN) high electron mobility transistors (HEMTs). [Cleveland, Ohio]: National Aeronautics and Space Administration, Glenn Research Center, 2003.
Знайти повний текст джерелаDuran, Halit C. High performance InP-based HEMTs with dry etched gate recess. Konstanz: Hartung-Gorre Verlag, 1998.
Знайти повний текст джерелаAnholt, Robert. Electrical and thermal characterization of MESFETs, HEMTs, and HBTs. Boston: Artech House, 1995.
Знайти повний текст джерелаLadbrooke, Peter H. MMIC design: GaAs FETS and HEMTs. Boston: Artech House, 1989.
Знайти повний текст джерелаJu, Y. Sungtaek. Microscale Heat Conduction in Integrated Circuits and Their Constituent Films. Boston, MA: Springer US, 1999.
Знайти повний текст джерелаJu, Y. Sungtaek. Microscale heat conduction in integrated circuits and their constituent films. Boston: Kluwer Academic, 1999.
Знайти повний текст джерелаJu, Y. Sungtaek. Microscale heat conduction in integrated circuits and their constituent films. Boston: Kluwer Academic, 1999.
Знайти повний текст джерелаInternational High Temperature Electronics Conference (4th 1998 Albuquerque, N.M.). 1998 Fourth International High Temperature Electronics Conference: HITEC, Albuquerque, New Mexico, USA, June 14-18, 1998. New York City, NY: The Institute of Electrical and Electronics Engineers, Inc., 1998.
Знайти повний текст джерелаЧастини книг з теми "Transistors HEMT"
Verma, Yogesh Kumar, Varun Mishra, Lucky Agarwal, Laxman Singh, and Santosh Kumar Gupta. "Study of Different Transport Properties of MgZnO/ZnO and AlGaN/GaN High Electron Mobility Transistors: A Review." In HEMT Technology and Applications, 53–69. Singapore: Springer Nature Singapore, 2022. http://dx.doi.org/10.1007/978-981-19-2165-0_4.
Повний текст джерелаTrew, R. J. "Field-Effect Transistor Models and Microwave Cad." In Pseudomorphic HEMT Technology and Applications, 125–40. Dordrecht: Springer Netherlands, 1996. http://dx.doi.org/10.1007/978-94-009-1630-2_6.
Повний текст джерелаBiswas, Kalyan, Rachita Ghoshhajra, and Angsuman Sarkar. "High Electron Mobility Transistor: Physics-Based TCAD Simulation and Performance Analysis." In HEMT Technology and Applications, 155–79. Singapore: Springer Nature Singapore, 2022. http://dx.doi.org/10.1007/978-981-19-2165-0_12.
Повний текст джерелаHayashi, Tetsuya, Yoshio Shimoida, Hideaki Tanaka, Shigeharu Yamagami, Satoshi Tanimoto, and Masakatsu Hoshi. "Novel Power Si/4H-SiC Heterojunction Tunneling Transistor (HETT)." In Silicon Carbide and Related Materials 2005, 1453–56. Stafa: Trans Tech Publications Ltd., 2006. http://dx.doi.org/10.4028/0-87849-425-1.1453.
Повний текст джерелаBanerjee, Amal. "Heterogeneous Junction Field Effect Devices—Schottky Diode, Metal Semiconductor Field Effect Transistor (MESFET), High Electron Mobility Transistor (HEMT)." In Synthesis Lectures on Engineering, Science, and Technology, 81–90. Cham: Springer Nature Switzerland, 2023. http://dx.doi.org/10.1007/978-3-031-45750-0_6.
Повний текст джерелаTran, Nhu Q., Loc T. P. Nguyen, Tri M. Do, and Quan M. Hoang. "Load-Pull Methodology to Characterize GaN High-Electron-Mobility Transistors (HEMTs)." In Intelligent Computing & Optimization, 1078–85. Cham: Springer International Publishing, 2022. http://dx.doi.org/10.1007/978-3-031-19958-5_101.
Повний текст джерелаNeda and Vandana Nath. "Comparative Analysis of Machine Learning Algorithms for High Electron Mobility Transistor (HEMT) Modeling." In Advancement of Intelligent Computational Methods and Technologies, 103–8. London: CRC Press, 2024. http://dx.doi.org/10.1201/9781003487906-20.
Повний текст джерелаBelkhiria, Maissa, Fraj Echouchene, and Nejeh Jaba. "Nano-heat Transfer in GAAFET Transistor Using Single-Phase-Lag Model." In Lecture Notes in Mechanical Engineering, 114–22. Cham: Springer International Publishing, 2021. http://dx.doi.org/10.1007/978-3-030-84958-0_12.
Повний текст джерелаRaghuveera, E., G. Purnachandra Rao, and Trupti Ranjan Lenka. "Prospects of III–V Semiconductor-Based High Electron Mobility Transistors (HEMTs) Towards Emerging Applications." In Lecture Notes in Electrical Engineering, 123–37. Singapore: Springer Nature Singapore, 2023. http://dx.doi.org/10.1007/978-981-99-4495-8_9.
Повний текст джерелаChatterjee, Neel, and Sujata Pandey. "Multiphysics Analysis of Heat Transfer in Gate All Around (GAA) Silicon Nanowire Transistor: Material Perspective." In Springer Proceedings in Physics, 49–55. Cham: Springer International Publishing, 2016. http://dx.doi.org/10.1007/978-3-319-29096-6_6.
Повний текст джерелаТези доповідей конференцій з теми "Transistors HEMT"
Rendek, K., A. Satka, J. Kovac, and D. Donoval. "Noise in the InAlN/GaN HEMT transistors." In Microsystems (ASDAM). IEEE, 2010. http://dx.doi.org/10.1109/asdam.2010.5666349.
Повний текст джерелаLeong, Kevin, Gerry Mei, Vesna Radisic, Stephen Sarkozy, and William Deal. "THz integrated circuits using InP HEMT transistors." In 2012 24th International Conference on Indium Phosphide & Related Materials (IPRM). IEEE, 2012. http://dx.doi.org/10.1109/iciprm.2012.6403302.
Повний текст джерелаSergentanis, Grigorios, Yales Rômulo De Novaes, Liliana De Lillo, Lee Empringham, and Mark C. Johnson. "Dynamic Characterization of 650V GaN HEMT Transistors." In 2023 IEEE 8th Southern Power Electronics Conference (SPEC). IEEE, 2023. http://dx.doi.org/10.1109/spec56436.2023.10407647.
Повний текст джерелаSeung Hyun Park, Hong-Hyun Park, M. Salmani-Jelodar, S. Steiger, M. Povolotsky, T. Kubis, and G. Klimeck. "Contact modeling and analysis of InAs HEMT transistors." In 2011 IEEE Nanotechnology Materials and Devices Conference (NMDC 2011). IEEE, 2011. http://dx.doi.org/10.1109/nmdc.2011.6155381.
Повний текст джерелаNasri, Faouzi, Haikel Mzoughi, Husien Salama, and Khalifa Ahmed Salama. "Numerical Analysis of Self-Heating Effect in HEMT Transistors." In 2023 International Conference on Electrical, Communication and Computer Engineering (ICECCE). IEEE, 2023. http://dx.doi.org/10.1109/icecce61019.2023.10442598.
Повний текст джерелаPala, Vipindas, Mona Hella, and T. Paul Chow. "Safe operating area of AlGaAs/InGaAs/GaAs HEMT power transistors." In IC's (ISPSD). IEEE, 2011. http://dx.doi.org/10.1109/ispsd.2011.5890836.
Повний текст джерелаNandha Kumar, S., and B. Bindu. "Reliability studies of AlGaN/GaN high electron mobility transistors (HEMT)." In 2012 International Conference on Devices, Circuits and Systems (ICDCS 2012). IEEE, 2012. http://dx.doi.org/10.1109/icdcsyst.2012.6188770.
Повний текст джерелаSchwierz, Frank. "The frequency limits of field-effect transistors: MOSFET vs. HEMT." In 2008 9th International Conference on Solid-State and Integrated-Circuit Technology (ICSICT). IEEE, 2008. http://dx.doi.org/10.1109/icsict.2008.4734822.
Повний текст джерелаChaibi, M., T. Fernandez, J. R. Tellez, A. Tazon, and M. Aghoutane. "Modelling of temperature and dispersion effects in MESFET and HEMT transistors." In 2008 Workshop on Integrated Nonlinear Microwave and Millimetre-Wave Circuits (INMMIC). IEEE, 2008. http://dx.doi.org/10.1109/inmmic.2008.4745745.
Повний текст джерелаAmgad, Al-Saman A., Yi Pei, Eugeny A. Ryndin, and Fujiang Lin. "Maximum Channel Temperature Estimation for GaN HEMT transistors with n-fingers." In 2021 IEEE International Conference on Integrated Circuits, Technologies and Applications (ICTA). IEEE, 2021. http://dx.doi.org/10.1109/icta53157.2021.9661984.
Повний текст джерелаЗвіти організацій з теми "Transistors HEMT"
Roberts, Adam T., and Henry O. Everitt. Low Temperature Photoluminescence (PL) from High Electron Mobility Transistors (HEMTs). Fort Belvoir, VA: Defense Technical Information Center, March 2015. http://dx.doi.org/10.21236/ada614121.
Повний текст джерелаJoshi, Ravindra P. Monte Carlo Transport Studies of GaN High Electron Mobility Transistors (HEMTs) for Microwave Applications. Fort Belvoir, VA: Defense Technical Information Center, March 2004. http://dx.doi.org/10.21236/ada421515.
Повний текст джерелаHeller, Eric R., Donald Dorsey, Jason P. Jones, Samuel Graham, Matthew R. Rosenberger, William P. King, and Rama Vetury. Electro-Thermo-Mechanical Transient Modeling of Stress Development in AlGaN/GaN High Electron Mobility Transistors (HEMTs) (Postprint). Fort Belvoir, VA: Defense Technical Information Center, February 2014. http://dx.doi.org/10.21236/ada614007.
Повний текст джерелаShah, Pankaj B., and Joe X. Qiu. Physics Based Analysis of Gallium Nitride (GaN) High Electron Mobility Transistor (HEMT) for Radio Frequency (RF) Power and Gain Optimization. Fort Belvoir, VA: Defense Technical Information Center, December 2011. http://dx.doi.org/10.21236/ada554911.
Повний текст джерелаTompkins, Randy P., and Danh Nguyen. Contactless Mobility, Carrier Density, and Sheet Resistance Measurements on Si, GaN, and AlGaN/GaN High Electron Mobility Transistor (HEMT) Wafers. Fort Belvoir, VA: Defense Technical Information Center, February 2015. http://dx.doi.org/10.21236/ada618164.
Повний текст джерелаHuebschman, Benjamin, and Pankaj B. Shah. A Numerical Technique for Removing Residual Gate-Source Capacitances When Extracting Parasitic Inductance for GaN High Electron Mobility Transistors (HEMTs). Fort Belvoir, VA: Defense Technical Information Center, March 2011. http://dx.doi.org/10.21236/ada539647.
Повний текст джерелаNochetto, Horacio C., Nicholas R. Jankowski, Brian Morgan, and Avram Bar-Cohen. A Hybrid Multi-gate Model of a Gallium Nitride (GaN) High Electron Mobility Transistor (HEMT) Device Incorporating GaN-substrate Thermal Boundary Resistance. Fort Belvoir, VA: Defense Technical Information Center, October 2012. http://dx.doi.org/10.21236/ada570599.
Повний текст джерела