Увійти

Готові списки джерел за темами / Structures en V

Зміст

Статті в журналах
Дисертації
Книги
Частини книг
Тези доповідей конференцій
Звіти організацій

Добірка наукової літератури з теми "Structures en V"

Автор: Grafiati

Опубліковано: 8 червня 2022

Оформте джерело за APA, MLA, Chicago, Harvard та іншими стилями

Оберіть тип джерела:

Ознайомтеся зі списками актуальних статей, книг, дисертацій, тез та інших наукових джерел на тему "Structures en V".

Біля кожної праці в переліку літератури доступна кнопка «Додати до бібліографії». Скористайтеся нею – і ми автоматично оформимо бібліографічне посилання на обрану працю в потрібному вам стилі цитування: APA, MLA, «Гарвард», «Чикаго», «Ванкувер» тощо.

Також ви можете завантажити повний текст наукової публікації у форматі «.pdf» та прочитати онлайн анотацію до роботи, якщо відповідні параметри наявні в метаданих.

Статті в журналах з теми "Structures en V"

1

Vougiouklis, Thomas. "Theh/v-structures." Journal of Discrete Mathematical Sciences and Cryptography 6, no. 2-3 (January 2003): 235–43. http://dx.doi.org/10.1080/09720529.2003.10697980.

Повний текст джерела

Стилі APA, Harvard, Vancouver, ISO та ін.

2

Wright, Douglas T. "Tubular structures V." Canadian Journal of Civil Engineering 22, no. 3 (June 1, 1995): 650. http://dx.doi.org/10.1139/l95-076.

Повний текст джерела

Стилі APA, Harvard, Vancouver, ISO та ін.

3

Vojta, G. "Instabilities and Nonequilibrium Structures V." Zeitschrift für Physikalische Chemie 200, Part_1_2 (January 1997): 281. http://dx.doi.org/10.1524/zpch.1997.200.part_1_2.281.

Повний текст джерела

Стилі APA, Harvard, Vancouver, ISO та ін.

4

Rai, Raghaw S., and Craig A. Parsons. "Characterizing III–V heteroepitaxial structures." JOM 46, no. 9 (September 1994): 50–54. http://dx.doi.org/10.1007/bf03222584.

Повний текст джерела

Стилі APA, Harvard, Vancouver, ISO та ін.

5

Averbuch-Pouchot, M. T., and A. Durif. "Structures of ethylenediammonium monohydrogentetraoxophosphate(V) and ethylenediammonium monohydrogentetraoxoarsenate(V)." Acta Crystallographica Section C Crystal Structure Communications 43, no. 10 (October 15, 1987): 1894–96. http://dx.doi.org/10.1107/s0108270187089716.

Повний текст джерела

Стилі APA, Harvard, Vancouver, ISO та ін.

6

Stockman, S. A., and G. E. Stillman. "Hydrogen in III-V Device Structures." Materials Science Forum 148-149 (December 1993): 501–0. http://dx.doi.org/10.4028/www.scientific.net/msf.148-149.501.

Повний текст джерела

Стилі APA, Harvard, Vancouver, ISO та ін.

7

Chang, Christopher J., William B. Connick, Donald W. Low, Michael W. Day, and Harry B. Gray. "Electronic Structures of Nitridomanganese(V) Complexes." Inorganic Chemistry 37, no. 12 (June 1998): 3107–10. http://dx.doi.org/10.1021/ic970598k.

Повний текст джерела

Стилі APA, Harvard, Vancouver, ISO та ін.

8

Sriram, S., and E. P. Supertzi. "Novel V-groove structures on silicon." Applied Optics 24, no. 12 (June 15, 1985): 1784. http://dx.doi.org/10.1364/ao.24.001784.

Повний текст джерела

Стилі APA, Harvard, Vancouver, ISO та ін.

9

Johns, D. J. "Wind-Excited Behavior of Structures V." Shock and Vibration Digest 21, no. 9 (September 1, 1989): 3–19. http://dx.doi.org/10.1177/058310248902100903.

Повний текст джерела

Стилі APA, Harvard, Vancouver, ISO та ін.

10

Munekata, H., T. Penney, and L. L. Chang. "Diluted magnetic III–V semiconductor structures." Surface Science 267, no. 1-3 (January 1992): 342–48. http://dx.doi.org/10.1016/0039-6028(92)91151-z.

Повний текст джерела

Стилі APA, Harvard, Vancouver, ISO та ін.

Більше джерел

Дисертації з теми "Structures en V"

1

Larkin, Victoria. "Transport studies in GaAs/AIGaAs V-groove quantum wires." Thesis, University of Sheffield, 2002. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.269463.

Повний текст джерела

Стилі APA, Harvard, Vancouver, ISO та ін.

2

Grimes, Richard Thomas. "Far infrared studies of III-V semiconductors structures." Thesis, University of Nottingham, 1990. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.238193.

Повний текст джерела

Стилі APA, Harvard, Vancouver, ISO та ін.

3

Tabata, Americo Sheitiro. "Caractérisation optique de micro-structures III-V contraintes." Lyon, INSA, 1994. http://www.theses.fr/1994ISAL0003.

Повний текст джерела

Анотація:

Ce travail a été réalisé dans le cadre d'un projet européen "ESPRIT Basic Research" intitulé "Structure of low dimensionality for future quantum semiconductor devices" - contrat n° 3086. L'objectif principal a été d'étudier les étapes d'élaboration du dispositif de type HEMT dans la filière InP, en utilisant les effets physiques de la contrainte sur la structure de bande et sur la masse effective pour obtenir des dispositifs à très haute mobilité. L'objectif de ce travail de thèse a été d'effectuer des études physiques de base, par photoluminescence sur des structures contraintes du type InP/InGaAs/InP, InAlAs/InGaAs/InP et InGaAs/ AlGaAs/GaAs. Dans ce cadre nous sommes intéressés particulièrement aux propriétés optiques des couches contraintes, à l'analyse de certaines propriétés structurelles telles que la rugosité d'interface et l'épaisseur critique pour la relaxation des couches contraintes, ainsi qu'à l'analyse des effets de contraintes sur la structure de bande
This work has been done in the framework of the European project "ESPRIT Basic Research" entitled "Structure of low dimensionality for future quantum semiconductor devices". The purpose of this contract was to study the elaboration of strained HEMT (High electron mobility transistors) devices on the basis of the InP technology. In this thesis, we have studied optical properties of strained InGaAs/lnP, InGaAs/InAlAs/lnP and InGaAs/AlGaAs/GaAs systems. Some structural properties like interface roughness and the critical thickness for relaxation were also analysed, as well as, the strain effect on the band structure. By low temperature photoluminescence measurements we have studied: 1) stabilisation process of InP substrate; 2) optical properties of InAs/lnP surface quantum wells; 3) optical properties of InAs/lnP quantum wells; 4) strain relaxation on the strained InGaAs/lnP system; 5) interfacial PL emission from the strained InGaAs/lnP interface; 6) optical and structural properties of Ino. S3Gao. 47As/lnxGa1-xAs (x=0. 65, 0. 75, 0. 82) system as a fonction of growth conditions; 7) transitivity rule on the Ino. S3Gao. 74As/lnxGa1-xAs (x=0. 65, 0. 75, 0. 82) system; 8) optical and structural properties of lnxGa1-xAs/lnAlAs/InP lattice matched (x=0. 53) and strained (x=0. 60) single quantum wells; 9) many body effects on the InGaAs/lnAlAs system; 10) optical characterisation of InGaAs/lnAlAs/lnP lattice matched and strained HEMT structures; 11) optical characterisation of InGaAs/AlGaAs/GaAs HEMT structures and 12) optical characterisation of (InAs)(GaAs)/AlGaAs/GaAs HEMT structures

Стилі APA, Harvard, Vancouver, ISO та ін.

4

Coles, Rikki J. "Quantum optical circuits using III-V nanophotonic structures." Thesis, University of Sheffield, 2015. http://etheses.whiterose.ac.uk/9624/.

Повний текст джерела

Стилі APA, Harvard, Vancouver, ISO та ін.

5

Falešník, Vlastimil. "Podélné struktůry v optických vláknech s využitím v senzorice." Master's thesis, Vysoké učení technické v Brně. Fakulta elektrotechniky a komunikačních technologií, 2015. http://www.nusl.cz/ntk/nusl-220417.

Повний текст джерела

Анотація:

This semestral work describes key concepts, principles and basic characteristics of optical fibers. Furthermore, the principles of phase mask and subsequent records of perpendicular or tilted structures in fiber are being discussed. The work also introduces the use of such structures in sensorics as well as its connection to Bragg grating. Considerable part of this thesis is dedicated to analysis and production of longitudinal structures in fibers.

Стилі APA, Harvard, Vancouver, ISO та ін.

6

Steer, Matthew John. "Optical and structural characterisation of III-V semiconductor qauntum wire and quantum dot structures." Thesis, University of Sheffield, 1998. http://etheses.whiterose.ac.uk/3458/.

Повний текст джерела

Анотація:

This thesis describes an extensive study of the optical and structural properties of GaAs/AlGaAs V-groove quantum wire and InAs/GaAs self-organised quantum dot structures. For the optical characterisation, the spectroscopic techniques of photoluminescence (PL), photoluminescence excitation (PLE), cathodoluminescence (CL) and electroluminescence (EL) have been used. In addition important information concerning the structural properties of the quantum wires and quantum dots has been obtained by high resolution transmission electron microscopy (TEM) measurements. Initial characterisation and optimisation of the quantum wire structures was conducted using CL and TEM imaging. Further optical characterisation of optimised structures was performed using a micro-focusing PL set-up which produced a laser spot size of -'2µm, allowing individual wires to be studied. Excitation under both high and low power density conditions revealed important information concerning the quality of the growth and the nature of the one-dimensional` confinement within the structure. Structures were grown with the quantum wires placed in the intrinsic region of a p-i-n junction. EL spectroscopy measurements allowed the observation of subband filling effects and an enhanced luminescence intensity for the quantum wire for low forward bias currents. This latter behaviour has important implications for device applications. An investigation of these p-i-n samples in magnetic fields up to 14T, revealed further evidence for 1D confinement in the quantum wires and 2D confinement of carriers in a vertical quantum well. This vertical quantum well, a feature that arises automatically during the growth, appears to channel carriers into the quantum wire, providing a possible mechanism for the enhanced wire electroluminescence intensity observed. In addition, evidence is presented for a possible excitonic-free carrier transition which is observed for high carrier densities in the wires. TEM structural analysis of self-organised InAs/GaAs quantum dots has shown that the dots can show a high degree of surface ordering, aligning themselves on the step edges of the underlying substrate. Excitation under high laser power densities using the micro-PL set-up has shown subband separations of around 75meV, which is very promising for room temperature opto-electronic device applications. In addition, very narrow line width emission has been observed from individual quantum dots on a small sub-micron etched mesa which contains -100 dots. The electronic structure of the quantum dots has been probed using resonant PL and PLE. These techniques have revealed important information regarding carrier relaxation mechanisms that exist in the quantum dots. In PLE features are observed at approximately 60 and 90meV from the detection energy and which move rigidly in energy when the detection energy is varied. This behaviour is attributed to carrier relaxation by the emission of multiple LO- phonons, a process that appears to bypass any `phonon bottleneck'. Similar features are also observed in resonantly excited PL spectra. Two distinct carrier relaxation mechanisms are demonstrated by this technique: a non-resonant mechanism from the upper excited state and a resonant mechanism involving the emission of multiple LO phonons, from the first excited state.

Стилі APA, Harvard, Vancouver, ISO та ін.

7

Leibnitz, P., G. Reck, H. J. Pietzsch, and H. Spies. "Structures of technetium and rhenium complexes." Forschungszentrum Dresden, 2010. http://nbn-resolving.de/urn:nbn:de:bsz:d120-qucosa-29787.

Повний текст джерела

Анотація:

Investigations in the 99mTc chemistry are stimulated by the search for new radiopharmaceuticals for nuclear medical applications. To understand the coordination mode of Tc with various complexing agents, macroscopic studies of technetium coordination chemistry are often performed using the low energy ß-emitting radionuclide 99Tc, which has a much longer half life (t1/2 = 2.12 x 105 years) than 99mTc, in the mg level. Investigations of Re coordination chemistry are done in conjunction with Tc studies because Re possesses chemical properties similar to those of Tc. For some chemical tasks, Re provides a non-radioactive alternative to work with Tc radioisotopes. In addition, 186Re and 188Re are of great interest to nuclear medicine as they possess nuclear properties favorable for use in therapeutic radiopharmaceuticals. Our investigations of Tc and Re coordination chemistry are toward this goal. A large series of technetium and rhenium complexes resulted from this studies have been characterized by X-ray crystal structure determinations. This survey covers the structural investigations performed by P.Leibnitz and G.Reck (BAM) from 1992 till now. It summarizes results obtained in the Rossendorf technetium group and is not intended to compete with the well-written reviews published so far.

Стилі APA, Harvard, Vancouver, ISO та ін.

8

Leibnitz, P., G. Reck, H. J. Pietzsch, and H. Spies. "Structures of technetium and rhenium complexes." Forschungszentrum Rossendorf, 2001. https://hzdr.qucosa.de/id/qucosa%3A21805.

Повний текст джерела

Анотація:

Investigations in the 99mTc chemistry are stimulated by the search for new radiopharmaceuticals for nuclear medical applications. To understand the coordination mode of Tc with various complexing agents, macroscopic studies of technetium coordination chemistry are often performed using the low energy ß-emitting radionuclide 99Tc, which has a much longer half life (t1/2 = 2.12 x 105 years) than 99mTc, in the mg level. Investigations of Re coordination chemistry are done in conjunction with Tc studies because Re possesses chemical properties similar to those of Tc. For some chemical tasks, Re provides a non-radioactive alternative to work with Tc radioisotopes. In addition, 186Re and 188Re are of great interest to nuclear medicine as they possess nuclear properties favorable for use in therapeutic radiopharmaceuticals. Our investigations of Tc and Re coordination chemistry are toward this goal. A large series of technetium and rhenium complexes resulted from this studies have been characterized by X-ray crystal structure determinations. This survey covers the structural investigations performed by P.Leibnitz and G.Reck (BAM) from 1992 till now. It summarizes results obtained in the Rossendorf technetium group and is not intended to compete with the well-written reviews published so far.

Стилі APA, Harvard, Vancouver, ISO та ін.

9

Verschoor, Geraldine Laura Ballantyne. "III-V semiconductor structures and devices of reduced dimensionality." Thesis, University of Oxford, 1998. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.244624.

Повний текст джерела

Стилі APA, Harvard, Vancouver, ISO та ін.

10

Kameni, Boumenou Christian. "Scanning probe force microscopy of III-V semiconductor structures." Thesis, Nelson Mandela University, 2017. http://hdl.handle.net/10948/13992.

Повний текст джерела

Анотація:

In this dissertation, cross-sectional potential imaging of GaAs-based homoepitaxial, heteroepitaxial and quantum well structures, all grown by atmospheric pressure Metal-organic Vapor Phase Epitaxy (MOVPE) is investigated. Kelvin probe force microscopy (KPFM), using amplitude modulation (AM) and frequency modulation (FM) modes in air and at room temperature, is used for the potential imaging. Studies performed on n-type GaAs homoepitaxial structures have shown two different potential profiles, related to the difference in electron density between the semi-insulating (SI) substrate and the epilayers. It is shown that the contact potential difference (CPD) between the tip and sample is higher on the semi-insulating substrate side than on the n-type epilayer side. This change in CPD across the interface has been explained by means of energy band diagrams indicating the relative Fermi level positions. In addition, it has also been found that the CPD across the interface increases with electron density. This result is in qualitative agreement with theory. In addition, as known from literature, even under ambient conditions FM mode KPFM provides better lateral resolution and more realistic CPD values than AM mode KPFM. Compared to the case of AM mode analysis, where the experimental CPD values were on average of the theoretical values, the CPD values from FM mode analysis are on average of the theoretical ones. Furthermore, by using FM mode, the transition across the interface is sharper and the surface potential flattens/saturates as expected when scanning sufficiently far away from the junction. The non-neutral space charge region of the sample with an electron density of for example, is as measured by FM-KPFM, whereas for AM-KPFM, the width is even more than and the potential profiles do not saturate. For the p-type GaAs homoepitaxial structures, FM mode measurements from a sample with a dopant density of are presented. As in the case of n-type GaAs,a similar potential profile showing two main domains has been obtained. However, unlike the case of type GaAs where the potential measured on the epilayer side is higher than that on the substrate side, the potential on the epilayer side of the junction is lower in this case due to the fact that the Fermi level of p-type GaAs is below that of the substrate.

Стилі APA, Harvard, Vancouver, ISO та ін.

Більше джерел

Книги з теми "Structures en V"

1

Tirapegui, Enrique. Instabilities and Nonequilibrium Structures V. Dordrecht: Springer Netherlands, 1996.

Знайти повний текст джерела

Стилі APA, Harvard, Vancouver, ISO та ін.

2

Tirapegui, Enrique, and Walter Zeller, eds. Instabilities and Nonequilibrium Structures V. Dordrecht: Springer Netherlands, 1996. http://dx.doi.org/10.1007/978-94-009-0239-8.

Повний текст джерела

Стилі APA, Harvard, Vancouver, ISO та ін.

3

International Conference on Structures Under Shock and Impact (5th 1998 Thessaloniki, Greece). Structures under shock and impact V. Edited by Jones Norman 1938-. Southampton: Computational Mechanics Publications, 1998.

Знайти повний текст джерела

Стилі APA, Harvard, Vancouver, ISO та ін.

4

Talinn), International Conference on High Performance Structures and Materials (5th 2010. High performance structures and materials V. Southampton: WIT, 2010.

Знайти повний текст джерела

Стилі APA, Harvard, Vancouver, ISO та ін.

5

Kyïv v ukraïnsʹkiĭ istoriï. Kyïv: Smoloskyp, 2011.

Знайти повний текст джерела

Стилі APA, Harvard, Vancouver, ISO та ін.

6

Ekaterinburg: Istorii︠a︡ goroda v arkhitekture. Ekaterinburg: Sokrat, 1998.

Знайти повний текст джерела

Стилі APA, Harvard, Vancouver, ISO та ін.

7

1951-, Herńandez S., and Brebbia C. A, eds. Computer aided optimum design of structures V. Southampton: Computational Mechanics Publications, 1997.

Знайти повний текст джерела

Стилі APA, Harvard, Vancouver, ISO та ін.

8

Mikhail, Anikst, Volodina Tatʹi͡a︡na Vladimirovna, and Artamonov I͡U︡ V, eds. Khram Vasilii͡a︡ Blazhennogo v Moskve: Pokrovskiĭ sobor. Moskva: "Iskusstvo", 1988.

Знайти повний текст джерела

Стилі APA, Harvard, Vancouver, ISO та ін.

9

Zemun da(v)našnji. Zemun: MostArt, 2010.

Знайти повний текст джерела

Стилі APA, Harvard, Vancouver, ISO та ін.

10

Mokrousov, V. P. Kumertau: Istorii︠a︡ v fotografii︠a︡kh. Ufa: UPK, 2010.

Знайти повний текст джерела

Стилі APA, Harvard, Vancouver, ISO та ін.

Більше джерел

Частини книг з теми "Structures en V"

1

Bourdelais, Patrice, Maurice Garden, and Alain Bideau. "V - Structures." In Histoire de la population française (3), 229. Presses Universitaires de France, 1988. http://dx.doi.org/10.3917/puf.dupaq.1988.01.0229.

Повний текст джерела

Стилі APA, Harvard, Vancouver, ISO та ін.

2

"/V, ( ) w." In Composite Steel Structures, 86–87. CRC Press, 1987. http://dx.doi.org/10.1201/9781482286359-18.

Повний текст джерела

Стилі APA, Harvard, Vancouver, ISO та ін.

3

"TEES BARRAGE BRIDGE DESIGN." In Tubular Structures V, 52. CRC Press, 2004. http://dx.doi.org/10.1201/9781482271355-10.

Повний текст джерела

Стилі APA, Harvard, Vancouver, ISO та ін.

4

"plate coupon after bending." In Tubular Structures V, 191. CRC Press, 2004. http://dx.doi.org/10.1201/9781482271355-100.

Повний текст джерела

Стилі APA, Harvard, Vancouver, ISO та ін.

5

"dial gauges at the centre of the specimens, where two gauges were set on a bar arm welded to each side of the specimen. This is to." In Tubular Structures V, 192–93. CRC Press, 2004. http://dx.doi.org/10.1201/9781482271355-101.

Повний текст джерела

Стилі APA, Harvard, Vancouver, ISO та ін.

6

"cyclic bending tests." In Tubular Structures V, 194–96. CRC Press, 2004. http://dx.doi.org/10.1201/9781482271355-102.

Повний текст джерела

Стилі APA, Harvard, Vancouver, ISO та ін.

7

"(l)in the case of coupons with only mother steel, the elongation little." In Tubular Structures V, 197. CRC Press, 2004. http://dx.doi.org/10.1201/9781482271355-103.

Повний текст джерела

Стилі APA, Harvard, Vancouver, ISO та ін.

8

"Stability of Axially Compressed Double-Tube Members." In Tubular Structures V, 198. CRC Press, 2004. http://dx.doi.org/10.1201/9781482271355-104.

Повний текст джерела

Стилі APA, Harvard, Vancouver, ISO та ін.

9

"addition the test results of braced incorporating." In Tubular Structures V, 199. CRC Press, 2004. http://dx.doi.org/10.1201/9781482271355-105.

Повний текст джерела

Стилі APA, Harvard, Vancouver, ISO та ін.

10

"denotes the length of the double-tube and denotes the." In Tubular Structures V, 200. CRC Press, 2004. http://dx.doi.org/10.1201/9781482271355-106.

Повний текст джерела

Стилі APA, Harvard, Vancouver, ISO та ін.

Тези доповідей конференцій з теми "Structures en V"

1

Liu, Hua, Mingsuo LI, Ronggang ZHU, and Liwei ZHOU. "Advanced structures on multiple configuration sensors." In Plasmonics V, edited by Zheyu Fang and Takuo Tanaka. SPIE, 2020. http://dx.doi.org/10.1117/12.2573661.

Повний текст джерела

Стилі APA, Harvard, Vancouver, ISO та ін.

2

RUSH, T., P. SCHRANTZ, and B. AGRAWAL. "Analysis of Intelsat V flight data." In 28th Structures, Structural Dynamics and Materials Conference. Reston, Virigina: American Institute of Aeronautics and Astronautics, 1987. http://dx.doi.org/10.2514/6.1987-784.

Повний текст джерела

Стилі APA, Harvard, Vancouver, ISO та ін.

3

Lawler, William, and Grady Riley. "Saturn V structural dynamic test/modeling." In 41st Structures, Structural Dynamics, and Materials Conference and Exhibit. Reston, Virigina: American Institute of Aeronautics and Astronautics, 2000. http://dx.doi.org/10.2514/6.2000-1674.

Повний текст джерела

Стилі APA, Harvard, Vancouver, ISO та ін.

4

Gravitz, Sidney. "Saturn V thrust buildup and vehicle release dynamics." In 41st Structures, Structural Dynamics, and Materials Conference and Exhibit. Reston, Virigina: American Institute of Aeronautics and Astronautics, 2000. http://dx.doi.org/10.2514/6.2000-1675.

Повний текст джерела

Стилі APA, Harvard, Vancouver, ISO та ін.

5

Polonsky, Stas, Simeon Realov, Jiun-Hsin Liao, Michael Hargrove, and Mark Ketchen. "Combined C-V/I-V front-end-of-line measurement." In 2012 IEEE International Conference on Microelectronic Test Structures (ICMTS). IEEE, 2012. http://dx.doi.org/10.1109/icmts.2012.6190656.

Повний текст джерела

Стилі APA, Harvard, Vancouver, ISO та ін.

6

Sleight, David, Thammaiah Sreekantamurthy, Daniel Kosareo, Robert Martin, Theodore Johnson, and Robert Martin. "Structural Design of Ares V Interstage Composite Structure." In 52nd AIAA/ASME/ASCE/AHS/ASC Structures, Structural Dynamics and Materials Conference. Reston, Virigina: American Institute of Aeronautics and Astronautics, 2011. http://dx.doi.org/10.2514/6.2011-1790.

Повний текст джерела

Стилі APA, Harvard, Vancouver, ISO та ін.

7

Smith, John. "Evolved Composite Structures for Atlas V." In 38th AIAA/ASME/SAE/ASEE Joint Propulsion Conference & Exhibit. Reston, Virigina: American Institute of Aeronautics and Astronautics, 2002. http://dx.doi.org/10.2514/6.2002-4201.

Повний текст джерела

Стилі APA, Harvard, Vancouver, ISO та ін.

8

Sriram, S. "Novel V-groove Structures On Silicon." In 1985 Cambridge Symposium, edited by Sriram Sriram. SPIE, 1985. http://dx.doi.org/10.1117/12.950752.

Повний текст джерела

Стилі APA, Harvard, Vancouver, ISO та ін.

9

Garner, B. J., and E. Tsui. "A Self-Organising Dictionary For Conceptual Structures." In Applications of Artificial Intelligence V, edited by John F. Gilmore. SPIE, 1987. http://dx.doi.org/10.1117/12.940641.

Повний текст джерела

Стилі APA, Harvard, Vancouver, ISO та ін.

10

Ardelean, Emil, Mark McEver, D. Cole, and Robert Clark. "Flutter Suppression Using V-Stack Piezoelectric Actuator." In 44th AIAA/ASME/ASCE/AHS/ASC Structures, Structural Dynamics, and Materials Conference. Reston, Virigina: American Institute of Aeronautics and Astronautics, 2003. http://dx.doi.org/10.2514/6.2003-1796.

Повний текст джерела

Стилі APA, Harvard, Vancouver, ISO та ін.

Звіти організацій з теми "Structures en V"

1

Morkoc, Hadis. III-V Heterojunction Structures and High Speed Devices. Fort Belvoir, VA: Defense Technical Information Center, March 1988. http://dx.doi.org/10.21236/ada195464.

Повний текст джерела

Стилі APA, Harvard, Vancouver, ISO та ін.

2

Morkoc, Hadis. III-V Heterojunction Structures and High Speed Devices. Fort Belvoir, VA: Defense Technical Information Center, March 1992. http://dx.doi.org/10.21236/ada250399.

Повний текст джерела

Стилі APA, Harvard, Vancouver, ISO та ін.

3

Stringfellow, G. B. Comparison of Epitaxial Growth Techniques for III-V Layer Structures. Fort Belvoir, VA: Defense Technical Information Center, May 1992. http://dx.doi.org/10.21236/ada251343.

Повний текст джерела

Стилі APA, Harvard, Vancouver, ISO та ін.

4

Wei, X., J. Braverman, M. Miranda, M. E. Rosario, and C. J. Costantino. Depth-dependent Vertical-to-Horizontal (V/H) Ratios of Free-Field Ground Motion Response Spectra for Deeply Embedded Nuclear Structures. Office of Scientific and Technical Information (OSTI), February 2015. http://dx.doi.org/10.2172/1176998.

Повний текст джерела

Стилі APA, Harvard, Vancouver, ISO та ін.

5

Gea, L. A., L. A. Boatner, J. D. Budai, and J. Rankin. The formation of Al{sub 2}O{sub 3}/V{sub 2}O{sub 3} multilayer structures by high-dose ion implantation. Office of Scientific and Technical Information (OSTI), April 1995. http://dx.doi.org/10.2172/102253.

Повний текст джерела

Стилі APA, Harvard, Vancouver, ISO та ін.

6

Kurennoy, Sergey S. Report on study of accelerating structures for muons in the velocity range of β=v/c=0.08-0.3 for J-PARC (g-2)/EDM experiment. Office of Scientific and Technical Information (OSTI), січень 2017. http://dx.doi.org/10.2172/1338720.

Повний текст джерела

Стилі APA, Harvard, Vancouver, ISO та ін.

7

Tanny, Josef, Gabriel Katul, Shabtai Cohen, and Meir Teitel. Micrometeorological methods for inferring whole canopy evapotranspiration in large agricultural structures: measurements and modeling. United States Department of Agriculture, October 2015. http://dx.doi.org/10.32747/2015.7594402.bard.

Повний текст джерела

Анотація:

Original objectives and revisions The original objectives as stated in the approved proposal were: (1) To establish guidelines for the use of micrometeorological techniques as accurate, reliable and low-cost tools for continuous monitoring of whole canopy ET of common crops grown in large agricultural structures. (2) To adapt existing methods for protected cultivation environments. (3) To combine previously derived theoretical models of air flow and scalar fluxes in large agricultural structures (an outcome of our previous BARD project) with ET data derived from application of turbulent transport techniques for different crops and structure types. All the objectives have been successfully addressed. The study was focused on both screenhouses and naturally ventilated greenhouses, and all proposed methods were examined. Background to the topic Our previous BARD project established that the eddy covariance (EC) technique is suitable for whole canopy evapotranspiration measurements in large agricultural screenhouses. Nevertheless, the eddy covariance technique remains difficult to apply in the farm due to costs, operational complexity, and post-processing of data – thereby inviting alternative techniques to be developed. The subject of this project was: 1) the evaluation of four turbulent transport (TT) techniques, namely, Surface Renewal (SR), Flux-Variance (FV), Half-order Time Derivative (HTD) and Bowen Ratio (BR), whose instrumentation needs and operational demands are not as elaborate as the EC, to estimate evapotranspiration within large agricultural structures; and 2) the development of mathematical models able to predict water savings and account for the external environmental conditions, physiological properties of the plant, and structure properties as well as to evaluate the necessary micrometeorological conditions for utilizing the above turbulent transfer methods in such protected environments. Major conclusions and achievements The major conclusions are: (i) the SR and FV techniques were suitable for reliable estimates of ET in shading and insect-proof screenhouses; (ii) The BR technique was reliable in shading screenhouses; (iii) HTD provided reasonable results in the shading and insect proof screenhouses; (iv) Quality control analysis of the EC method showed that conditions in the shading and insect proof screenhouses were reasonable for flux measurements. However, in the plastic covered greenhouse energy balance closure was poor. Therefore, the alternative methods could not be analyzed in the greenhouse; (v) A multi-layered flux footprint model was developed for a ‘generic’ crop canopy situated within a protected environment such as a large screenhouse. The new model accounts for the vertically distributed sources and sinks within the canopy volume as well as for modifications introduced by the screen on the flow field and microenvironment. The effect of the screen on fetch as a function of its relative height above the canopy is then studied for the first time and compared to the case where the screen is absent. The model calculations agreed with field experiments based on EC measurements from two screenhouse experiments. Implications, both scientific and agricultural The study established for the first time, both experimentally and theoretically, the use of four simple TT techniques for ET estimates within large agricultural screenhouses. Such measurements, along with reliable theoretical models, will enable the future development of lowcost ET monitoring system which will be attainable for day-to-day use by growers in improving irrigation management.

Стилі APA, Harvard, Vancouver, ISO та ін.

8

Nelson, Stacy Michelle, and Alexander Anthony Hanson. Survey of DAKOTA's V&V Capabilities in the Simulation of Residual Stresses in a Simple Composite Structure. Office of Scientific and Technical Information (OSTI), October 2018. http://dx.doi.org/10.2172/1481581.

Повний текст джерела

Стилі APA, Harvard, Vancouver, ISO та ін.

9

Barnett, Janet Heine. Boolean Algebra as an Abstract Structure: Edward V. Huntington and Axiomatization. Washington, DC: The MAA Mathematical Sciences Digital Library, July 2013. http://dx.doi.org/10.4169/loci003998.

Повний текст джерела

Стилі APA, Harvard, Vancouver, ISO та ін.

10

Bell, J. S. Structure, V, Labrador sea, Top Gudrid / Cartwright and top Kenamu formations. Natural Resources Canada/ESS/Scientific and Technical Publishing Services, 1989. http://dx.doi.org/10.4095/127186.

Повний текст джерела

Стилі APA, Harvard, Vancouver, ISO та ін.

Ми пропонуємо знижки на всі преміум-плани для авторів, чиї праці увійшли до тематичних добірок літератури. Зв'яжіться з нами, щоб отримати унікальний промокод!