Добірка наукової літератури з теми "Single electron devices"
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Статті в журналах з теми "Single electron devices"
Oda, Shunri. "Single Electron Devices." IEEJ Transactions on Electronics, Information and Systems 121, no. 1 (2001): 19–22. http://dx.doi.org/10.1541/ieejeiss1987.121.1_19.
Повний текст джерелаSMITH, DORAN D. "SINGLE ELECTRON DEVICES." International Journal of High Speed Electronics and Systems 09, no. 01 (March 1998): 165–207. http://dx.doi.org/10.1142/s0129156498000099.
Повний текст джерелаAhmed, Haroon, and Kazuo Nakazato. "Single-electron devices." Microelectronic Engineering 32, no. 1-4 (September 1996): 297–315. http://dx.doi.org/10.1016/0167-9317(95)00179-4.
Повний текст джерелаTAKAHASHI, YASUO, AKIRA FUJIWARA, MASAO NAGASE, HIDEO NAMATSU, KENJI KURIHARA, KAZUMI IWADATE, and KATSUMI MURASE. "Silicon single-electron devices." International Journal of Electronics 86, no. 5 (May 1999): 605–39. http://dx.doi.org/10.1080/002072199133283.
Повний текст джерелаTakahashi, Yasuo, Yukinori Ono, Akira Fujiwara, and Hiroshi Inokawa. "Silicon single-electron devices." Journal of Physics: Condensed Matter 14, no. 39 (September 20, 2002): R995—R1033. http://dx.doi.org/10.1088/0953-8984/14/39/201.
Повний текст джерелаFLENSBERG, KARSTEN, ARKADI A. ODINTSOV, FEIKE LIEFRINK, and PAUL TEUNISSEN. "TOWARDS SINGLE-ELECTRON METROLOGY." International Journal of Modern Physics B 13, no. 21n22 (September 10, 1999): 2651–87. http://dx.doi.org/10.1142/s0217979299002587.
Повний текст джерелаLi, Rui-Hao, Jun-Yang Liu, and Wen-Jing Hong. "Regulation strategies based on quantum interference in electrical transport of single-molecule devices." Acta Physica Sinica 71, no. 6 (2022): 067303. http://dx.doi.org/10.7498/aps.71.20211819.
Повний текст джерелаLabra-Muñoz, Jacqueline A., Arie de Reuver, Friso Koeleman, Martina Huber, and Herre S. J. van der Zant. "Ferritin-Based Single-Electron Devices." Biomolecules 12, no. 5 (May 15, 2022): 705. http://dx.doi.org/10.3390/biom12050705.
Повний текст джерелаSchupp, Felix J. "Single-electron devices in silicon." Materials Science and Technology 33, no. 8 (October 18, 2016): 944–62. http://dx.doi.org/10.1080/02670836.2016.1242826.
Повний текст джерелаAbramov, I. I., and E. G. Novik. "Classification of single-electron devices." Semiconductors 33, no. 11 (November 1999): 1254–59. http://dx.doi.org/10.1134/1.1187860.
Повний текст джерелаДисертації з теми "Single electron devices"
Scholze, Andreas. "Simulation of single-electron devices /." Zürich, 2000. http://e-collection.ethbib.ethz.ch/show?type=diss&nr=13526.
Повний текст джерелаWasshuber, Christoph. "About single-electron devices and circuits /." Wien : Österr. Kunst- und Kulturverl, 1998. http://bvbr.bib-bvb.de:8991/F?func=service&doc_library=BVB01&doc_number=008183172&line_number=0001&func_code=DB_RECORDS&service_type=MEDIA.
Повний текст джерелаHe, J. "Few-electron transfer devices for single-electron logic applications." Thesis, University of Cambridge, 2005. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.603913.
Повний текст джерелаPooley, David Martin. "Vertical silicon single-electron devices with silicon nitride tunnel barriers." Thesis, University of Cambridge, 2001. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.621302.
Повний текст джерелаAlkhalil, Feras. "Development of novel fabrication technology for SOI single electron transfer devices." Thesis, University of Southampton, 2013. https://eprints.soton.ac.uk/360500/.
Повний текст джерелаCarroll, Natalie R. Sohlberg Karl William Dr. "Theoretical descriptions of electron transport through single molecules: developing design tools for molecular electronic devices /." Philadelphia, Pa. : Drexel University, 2004. http://dspace.library.drexel.edu/handle/1860/330.
Повний текст джерелаChu, Rongming. "AlGaN-GaN single- and double-channel high electron mobility transistors /." View abstract or full-text, 2004. http://library.ust.hk/cgi/db/thesis.pl?ELEC%202004%20CHU.
Повний текст джерелаIncludes bibliographical references (leaves 74-82). Also available in electronic version. Access restricted to campus users.
Rajagopal, Senthil Arun. "SINGLE MOLECULE ELECTRONICS AND NANOFABRICATION OF MOLECULAR ELECTRONIC DEVICES." Miami University / OhioLINK, 2006. http://rave.ohiolink.edu/etdc/view?acc_num=miami1155330219.
Повний текст джерелаNicol, Robert Leiper. "Fabrication and characterization of ultra-small tunnel junctions for single electron devices." Thesis, University of Glasgow, 1997. http://theses.gla.ac.uk/5365/.
Повний текст джерелаKleinschmidt, Peter. "Applications of single-electron devices in electrical metrology and far-Infrared detection." Thesis, Royal Holloway, University of London, 2007. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.444545.
Повний текст джерелаКниги з теми "Single electron devices"
Scholze, Andreas. Simulation of single-electron devices. Konstanz: Hartung-Gorre, 2000.
Знайти повний текст джерелаKoch, Hans, and Heinz Lübbig, eds. Single-Electron Tunneling and Mesoscopic Devices. Berlin, Heidelberg: Springer Berlin Heidelberg, 1992. http://dx.doi.org/10.1007/978-3-642-77274-0.
Повний текст джерелаSingle-electron devices and circuits in silicon. London: Imperial College Press, 2010.
Знайти повний текст джерелаHans, Koch. Single-Electron Tunneling and Mesoscopic Devices: Proceedings of the 4th International Conference SQUID '91 (Sessions on SET and Mesoscopic Devices), Berlin, Fed. Rep. of Germany, June 18-21, 1991. Berlin, Heidelberg: Springer Berlin Heidelberg, 1992.
Знайти повний текст джерела1948-, Koch H., and Lübbig H. 1932-, eds. Single-electron tunneling and mesoscopic devices: Proceedings of the 4th international conference, SQUID '91 (sessions on SET and mesoscopic devices), Berlin, Fed. Rep. of Germany, June 18-21, 1991. Berlin: Springer-Verlag, 1992.
Знайти повний текст джерелаBurtman, Vladimir. Molecular orbital gap studies in tunneling single molecular devices. Hauppauge, N.Y: Nova Science Publishers, 2011.
Знайти повний текст джерелаVisscher, Erick H., and Erik Henk Visscher. Technology & Applications of Single-Electron Tunneling Devices. Coronet Books, 1996.
Знайти повний текст джерелаKoch, H. Single-Electron Tunneling and Mesoscopic Devices: Proceedings of the 4th International Conference, Squid '91 (Sessions on Set and Mesoscopic Devices), (Lecture Notes in Computer Science,). Springer, 1992.
Знайти повний текст джерелаHans, Koch, and Ernest B. Vinberg. Single-Electron Tunneling and Mesoscopic Devices: Proceedings of the 4th International Conference SQUID '91 , ... Series in Electronics and Photonics ). Springer, 2011.
Знайти повний текст джерелаKoch, H. Single Electron Tunneling and Mesoscopic Devices: Proceedings of the 4th International Conference Squid '91 (Springer Series in Electronics and Photonics). Springer, 1992.
Знайти повний текст джерелаЧастини книг з теми "Single electron devices"
Weis, Jürgen. "Single-Electron Devices." In CFN Lectures on Functional Nanostructures Vol. 1, 87–121. Berlin, Heidelberg: Springer Berlin Heidelberg, 2004. http://dx.doi.org/10.1007/978-3-540-31533-9_5.
Повний текст джерелаTakahashi, Yasuo, Yukinori Ono, Akira Fujiwara, Katsuhiko Nishiguchi, and Hiroshi Inokawa. "Silicon Single-Electron Devices." In Nanostructure Science and Technology, 125–72. Boston, MA: Springer US, 2009. http://dx.doi.org/10.1007/978-0-387-78689-6_5.
Повний текст джерелаNakazato, K. "Single Electron Memory Device Simulations." In Simulation of Semiconductor Processes and Devices 1998, 201–2. Vienna: Springer Vienna, 1998. http://dx.doi.org/10.1007/978-3-7091-6827-1_51.
Повний текст джерелаSanquer, M., X. Jehl, M. Pierre, B. Roche, M. Vinet, and R. Wacquez. "Single Dopant and Single Electron Effects in CMOS Devices." In Semiconductor-On-Insulator Materials for Nanoelectronics Applications, 251–63. Berlin, Heidelberg: Springer Berlin Heidelberg, 2011. http://dx.doi.org/10.1007/978-3-642-15868-1_14.
Повний текст джерелаClaeson, T., P. Delsing, D. Haviland, L. Kuzmin, and K. K. Likharev. "Correlated Single Electron Tunneling In Ultrasmall Junctions." In Nonlinear Superconductive Electronics and Josephson Devices, 197–228. Boston, MA: Springer US, 1991. http://dx.doi.org/10.1007/978-1-4615-3852-3_16.
Повний текст джерелаDzurak, A. S., M. Field, J. E. F. Frost, I. M. Castleton, C. G. Smith, C. T. Liang, M. Pepper, D. A. Ritchie, E. H. Linfield, and G. A. C. Jones. "Conductance in Quantum Boxes: Interference and Single Electron Effects." In Quantum Transport in Ultrasmall Devices, 201–16. Boston, MA: Springer US, 1995. http://dx.doi.org/10.1007/978-1-4615-1967-6_10.
Повний текст джерелаBarker, John R., and Sharif Babiker. "Quantum Traffic Theory of Single Electron Transport in Nanostructures." In Quantum Transport in Ultrasmall Devices, 217–25. Boston, MA: Springer US, 1995. http://dx.doi.org/10.1007/978-1-4615-1967-6_11.
Повний текст джерелаEaves, L., F. W. Sheard, and G. A. Toombs. "The Investigation of Single and Double Barrier (Resonant Tunnelling) Heterostructures Using High Magnetic Fields." In Physics of Quantum Electron Devices, 107–46. Berlin, Heidelberg: Springer Berlin Heidelberg, 1990. http://dx.doi.org/10.1007/978-3-642-74751-9_5.
Повний текст джерелаPashkin, Yu A., Y. Nakamura, T. Yamamoto, and J. S. Tsai. "Possibility of Single-Electron Devices and Superconducting Coherence." In International Workshop on Superconducting Nano-Electronics Devices, 97–103. Boston, MA: Springer US, 2002. http://dx.doi.org/10.1007/978-1-4615-0737-6_11.
Повний текст джерелаWallisser, C., B. Limbach, P. vom Stein, and R. Schäfer. "Single-Electron Transistors in the Regime of High Conductance." In International Workshop on Superconducting Nano-Electronics Devices, 123–32. Boston, MA: Springer US, 2002. http://dx.doi.org/10.1007/978-1-4615-0737-6_14.
Повний текст джерелаТези доповідей конференцій з теми "Single electron devices"
Hadley, P. "Single-electron tunneling devices." In Lectures on superconductivity in networks and mesoscopic systems. AIP, 1998. http://dx.doi.org/10.1063/1.55277.
Повний текст джерелаNakazato and White. "Single-electron switch for phase-locked single-electron logic devices." In Proceedings of IEEE International Electron Devices Meeting. IEEE, 1992. http://dx.doi.org/10.1109/iedm.1992.307407.
Повний текст джерелаYano, Kazuo, Tomoyuki Ishii, Takashi Hashimoto, Takashi Kobayashi, Fumio Murai, and Koichi Seki. "Room-Temperature Single-Electron Devices." In 1994 International Conference on Solid State Devices and Materials. The Japan Society of Applied Physics, 1994. http://dx.doi.org/10.7567/ssdm.1994.s-iii-6.
Повний текст джерелаAllec, Nicholas, Robert Knobel, and Li Shang. "Adaptive Simulation for Single-Electron Devices." In 2008 Design, Automation and Test in Europe. IEEE, 2008. http://dx.doi.org/10.1109/date.2008.4484815.
Повний текст джерелаAllec, Nicholas, Robert Knobel, and Li Shang. "Adaptive simulation for single-electron devices." In the conference. New York, New York, USA: ACM Press, 2008. http://dx.doi.org/10.1145/1403375.1403621.
Повний текст джерелаNakazato, Kazuo, and Kazuhito Tsukagoshi. "Turnstile Based Single-Electron Logic Devices." In 1997 International Conference on Solid State Devices and Materials. The Japan Society of Applied Physics, 1997. http://dx.doi.org/10.7567/ssdm.1997.b-9-2.
Повний текст джерелаDeyasi, Arpan, and Ritabrata Chakraborty. "Analytical computation of transfer characteristics of single electron transistor." In 2017 Devices for Integrated Circuit (DevIC). IEEE, 2017. http://dx.doi.org/10.1109/devic.2017.8073905.
Повний текст джерела"Self-Assembled Quantum Dot Single Electron Devices." In Microprocesses and Nanotechnology '98. 1998 International Microprocesses and Nanotechnology Conference. IEEE, 1998. http://dx.doi.org/10.1109/imnc.1998.730100.
Повний текст джерелаTakahashi, Y. "Silicon Single-electron Devices for Logic Applications." In 32nd European Solid-State Device Research Conference. IEEE, 2002. http://dx.doi.org/10.1109/essderc.2002.194872.
Повний текст джерелаFujiwara, Akira, Gento Yamahata, Katsuhiko Nishiguchi, Gabriel P. Lansbergen, and Yukinori Ono. "Silicon single-electron transfer devices: Ultimate control of electric charge." In 2012 IEEE Silicon Nanoelectronics Workshop (SNW). IEEE, 2012. http://dx.doi.org/10.1109/snw.2012.6243336.
Повний текст джерелаЗвіти організацій з теми "Single electron devices"
Averin, D. V. Semiconductor Single-Electron Digital Devices and Circuits. Fort Belvoir, VA: Defense Technical Information Center, June 1993. http://dx.doi.org/10.21236/ada278338.
Повний текст джерелаvan der Heijden, Joost. Optimizing electron temperature in quantum dot devices. QDevil ApS, March 2021. http://dx.doi.org/10.53109/ypdh3824.
Повний текст джерелаKoh, Seong J., and Choong-Un Kim. Fabrication of Single Electron Devices within the Framework of CMOS Technology. Fort Belvoir, VA: Defense Technical Information Center, December 2008. http://dx.doi.org/10.21236/ada491301.
Повний текст джерелаSturm, James C. Operation and Fabrication of Single Electron and Coherent Nanoscale Semiconductor Devices. Fort Belvoir, VA: Defense Technical Information Center, December 2004. http://dx.doi.org/10.21236/ada429504.
Повний текст джерелаPolsky, Ronen. Electrochemical Detection of Single Molecules in Nanogap Electrode Fluidic Devices. Office of Scientific and Technical Information (OSTI), January 2018. http://dx.doi.org/10.2172/1494168.
Повний текст джерелаPandey, R. K. Growth of Device Quality Bulk Single Crystal of Pb-K-Niobate (PKN) for SAW (Surface Acoustic Wave)-Devices and Electro-Optical Applications. Fort Belvoir, VA: Defense Technical Information Center, December 1985. http://dx.doi.org/10.21236/ada179716.
Повний текст джерелаValishev, Alexander. The Effect of Electron Lens as Landau Damping Device on Single Particle Dynamics in HL-LHC. Office of Scientific and Technical Information (OSTI), July 2017. http://dx.doi.org/10.2172/1480123.
Повний текст джерелаSmit, Amelia, Kate Dunlop, Nehal Singh, Diona Damian, Kylie Vuong, and Anne Cust. Primary prevention of skin cancer in primary care settings. The Sax Institute, August 2022. http://dx.doi.org/10.57022/qpsm1481.
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