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Статті в журналах з теми "Silicon solar cells"
Vlaskin, V. I. "Nanocrystalline silicon carbide films for solar cells." Semiconductor Physics Quantum Electronics and Optoelectronics 19, no. 3 (September 30, 2016): 273–78. http://dx.doi.org/10.15407/spqeo19.03.273.
Повний текст джерелаWagner, P. "Silicon solar cells." Microelectronics Journal 19, no. 4 (July 1988): 37–50. http://dx.doi.org/10.1016/s0026-2692(88)80043-0.
Повний текст джерелаWenham, S. R., and M. A. Green. "Silicon solar cells." Progress in Photovoltaics: Research and Applications 4, no. 1 (January 1996): 3–33. http://dx.doi.org/10.1002/(sici)1099-159x(199601/02)4:1<3::aid-pip117>3.0.co;2-s.
Повний текст джерелаKorkishko, R. M. "Analysis of features of recombination mechanisms in silicon solar cells." Semiconductor Physics Quantum Electronics and Optoelectronics 17, no. 1 (March 31, 2014): 14–20. http://dx.doi.org/10.15407/spqeo17.01.014.
Повний текст джерелаTsakalakos, L., J. Balch, J. Fronheiser, B. A. Korevaar, O. Sulima, and J. Rand. "Silicon nanowire solar cells." Applied Physics Letters 91, no. 23 (December 3, 2007): 233117. http://dx.doi.org/10.1063/1.2821113.
Повний текст джерелаHill, R. "Amorphous Silicon Solar Cells." Electronics and Power 32, no. 9 (1986): 680. http://dx.doi.org/10.1049/ep.1986.0402.
Повний текст джерелаGalloni, Roberto. "Amorphous silicon solar cells." Renewable Energy 8, no. 1-4 (May 1996): 400–404. http://dx.doi.org/10.1016/0960-1481(96)88886-0.
Повний текст джерелаBlakers, A. W., and T. Armour. "Flexible silicon solar cells." Solar Energy Materials and Solar Cells 93, no. 8 (August 2009): 1440–43. http://dx.doi.org/10.1016/j.solmat.2009.03.016.
Повний текст джерелаWon, Rachel. "Graphene–silicon solar cells." Nature Photonics 4, no. 7 (July 2010): 411. http://dx.doi.org/10.1038/nphoton.2010.140.
Повний текст джерелаCarlson, D. E. "Amorphous-silicon solar cells." IEEE Transactions on Electron Devices 36, no. 12 (1989): 2775–80. http://dx.doi.org/10.1109/16.40936.
Повний текст джерелаДисертації з теми "Silicon solar cells"
Søiland, Anne Karin. "Silicon for Solar Cells." Doctoral thesis, Norwegian University of Science and Technology, Department of Materials Technology, 2005. http://urn.kb.se/resolve?urn=urn:nbn:no:ntnu:diva-565.
Повний текст джерелаThis thesis work consists of two parts, each with a different motivation. Part II is the main part and was partly conducted in industry, at ScanWafer ASA’s plant no.2 in Glomfjord.
The large growth in the Photo Voltaic industry necessitates a dedicated feedstock for this industry, a socalled Solar Grade (SoG) feedstock, since the currently used feedstock rejects from the electronic industry can not cover the demand. Part I of this work was motivated by this urge for a SoG- feedstock. It was a cooperation with the Sintef Materials and Chemistry group, where the aim was to study the kinetics of the removal reactions for dissolved carbon and boron in a silicon melt by oxidative gas treatment. The main focus was on carbon, since boron may be removed by other means. A plasma arc was employed in combination with inductive heating. The project was, however, closed after only two experiments. The main observations from these two experiments were a significant boron removal, and the formation of a silica layer on the melt surface when the oxygen content in the gas was increased from 2 to 4 vol%. This silica layer inhibited further reactions.
Multi-crystalline (mc) silicon produced by directional solidification constitutes a large part of the solar cell market today. Other techniques are emerging/developing and to keep its position in the market it is important to stay competitive. Therefore increasing the knowledge on the material produced is necessary. Gaining knowledge also on phenomenas occurring during the crystallisation process can give a better process control.
Part II of this work was motivated by the industry reporting high inclusion contents in certain areas of the material. The aim of the work was to increase the knowledge of inclusion formation in this system. The experimental work was divided into three different parts;
1) Inclusion study
2) Extraction of melt samples during crystallisation, these were to be analysed for carbon- and nitrogen. Giving thus information of the contents in the liquid phase during soldification.
3) Fourier Transform Infrared Spectroscopy (FTIR)-measurements of the substitutional carbon contents in wafers taken from similar height positions as the melt samples. Giving thus information of the dissolved carbon content in the solid phase.
The inclusion study showed that the large inclusions found in this material are β-SiC and β-Si3N4. They appear in particularly high quantities in the top-cuts. The nitrides grow into larger networks, while the carbide particles tend to grow on the nitrides. The latter seem to act as nucleating centers for carbide precipitation. The main part of inclusions in the topcuts lie in the size range from 100- 1000 µm in diameter when measured by the Coulter laser diffraction method.
A method for sampling of the melt during crystallisation under reduced pressure was developed, giving thus the possibility of indicating the bulk concentration in the melt of carbon and nitrogen. The initial carbon concentration was measured to ~30 and 40 ppm mass when recycled material was employed in the charge and ~ 20 ppm mass when no recycled material was added. Since the melt temperature at this initial stage is ~1500 °C these carbon levels are below the solubility limit. The carbon profiles increase with increasing fraction solidified. For two profiles there is a tendency of decreasing contents at high fraction solidified.
For nitrogen the initial contents were 10, 12 and 44 ppm mass. The nitrogen contents tend to decrease with increasing fraction solidified. The surface temperature also decreases with increasing fraction solidified. Indicating that the melt is saturated with nitrogen already at the initial stage. The proposed mechanism of formation is by dissolution of coating particles, giving a saturated melt, where β-Si3N4 precipitates when cooling. Supporting this mechanism are the findings of smaller nitride particles at low fraction solidified, that the precipitated phase are β-particles, and the decreasing nitrogen contents with increasing fraction solidified.
The carbon profile for the solid phase goes through a maximum value appearing at a fraction solidified from 0.4 to 0.7. The profiles flatten out after the peak and attains a value of ~ 8 ppma. This drop in carbon content is associated with a precipitation of silicon carbide. It is suggested that the precipitation of silicon carbide occurs after a build-up of carbon in the solute boundary layer.
FTIR-measurements for substitutional carbon and interstitial oxygen were initiated at the institute as a part of the work. A round robin test was conducted, with the Energy Research Centre of the Netherlands (ECN) and the University of Milano-Bicocci (UniMiB) as the participants. The measurements were controlled against Secondary Ion Mass Spectrometer analyses. For oxygen the results showed a good correspondence between the FTIR-measurements and the SIMS. For carbon the SIMS-measurements were significantly lower than the FTIR-measurements. This is probably due to the low resistivity of the samples (~1 Ω cm), giving free carrier absorption and an overestimation of the carbon content.
Tarabsheh, Anas al. "Amorphous silicon based solar cells." kostenfrei, 2007. http://nbn-resolving.de/urn:nbn:de:bsz:93-opus-29491.
Повний текст джерелаAl, Tarabsheh Anas. "Amorphous silicon based solar cells." [S.l. : s.n.], 2007. http://nbn-resolving.de/urn:nbn:de:bsz:93-opus-29491.
Повний текст джерелаBett, Alexander Jürgen [Verfasser], and Stefan [Akademischer Betreuer] Glunz. "Perovskite silicon tandem solar cells : : two-terminal perovskite silicon tandem solar cells using optimized n-i-p perovskite solar cells." Freiburg : Universität, 2020. http://d-nb.info/1214179703/34.
Повний текст джерелаSchultz, Oliver. "High-efficiency multicrystalline silicon solar cells." München Verl. Dr. Hut, 2005. http://deposit.d-nb.de/cgi-bin/dokserv?idn=977880567.
Повний текст джерелаEcheverria, Molina Maria Ines. "Crack Analysis in Silicon Solar Cells." Scholar Commons, 2012. http://scholarcommons.usf.edu/etd/4311.
Повний текст джерелаLi, Dai-Yin. "Texturization of multicrystalline silicon solar cells." Thesis, Massachusetts Institute of Technology, 2010. http://hdl.handle.net/1721.1/64615.
Повний текст джерелаCataloged from PDF version of thesis.
Includes bibliographical references (p. 103-111).
A significant efficiency gain for crystalline silicon solar cells can be achieved by surface texturization. This research was directed at developing a low-cost, high-throughput and reliable texturing method that can create a honeycomb texture. Two distinct approaches for surface texturization were studied. The first approach was photo-defined etching. For this approach, the research focus was to take advantage of Vall6ra's technique published in 1999, which demonstrated a high-contrast surface texture on p-type silicon created by photo-suppressed etching. Further theoretical consideration, however, led to a conclusion that diffusion of bromine in the electrolyte impacts the resolution achievable with Vallera's technique. Also, diffusion of photocarriers may impose an additional limitation on the resolution. The second approach studied was based on soft lithography. For this approach, a texturization process sequence that created a honeycomb texture with 20 ptm spacing on polished wafers at low cost and high throughput was developed. Novel techniques were incorporated in the process sequence, including surface wettability patterning by microfluidic lithography and selective condensation based on Raoult's law. Microfluidic lithography was used to create a wettability pattern from a 100A oxide layer, and selective condensation based on Raoult's law was used to reliably increase the thickness of the glycerol/water liquid film entrained on hydrophilic oxide islands approximately from 0.2 pm to 2.5 pm . However, there remain several areas that require further development to make the process sequence truly successful, especially when applied to multicrystalline wafers.
by Dai-Yin Li.
Ph.D.
Osorio, Ruy Sebastian Bonilla. "Surface passivation for silicon solar cells." Thesis, University of Oxford, 2015. https://ora.ox.ac.uk/objects/uuid:46ebd390-8c47-4e4b-8c26-e843e8c12cc4.
Повний текст джерелаZhu, Mingxuan. "Silicon nanowires for hybrid solar cells." Ecole centrale de Marseille, 2013. http://tel.archives-ouvertes.fr/docs/00/94/57/87/PDF/The_manuscript-4.pdf.
Повний текст джерелаForster, Maxime. "Compensation engineering for silicon solar cells." Phd thesis, INSA de Lyon, 2012. http://hdl.handle.net/1885/156020.
Повний текст джерелаКниги з теми "Silicon solar cells"
Zaidi, Saleem Hussain. Crystalline Silicon Solar Cells. Cham: Springer International Publishing, 2021. http://dx.doi.org/10.1007/978-3-030-73379-7.
Повний текст джерелаGoetzberger, Adolf, Joachim Knobloch, and Bernhard Voß. Crystalline Silicon Solar Cells. Chichester, UK: John Wiley & Sons, Ltd, 2014. http://dx.doi.org/10.1002/9781119033769.
Повний текст джерелаTakahashi, K. Amorphous silicon solar cells. London: North Oxford Academic, 1986.
Знайти повний текст джерелаCrystalline silicon solar cells. Chichester: Wiley, 1998.
Знайти повний текст джерелаHann, Geoff. Amorphous silicon solar cells. East Perth, W.A: Minerals and Energy Research Institute of Western Australia, 1997.
Знайти повний текст джерелаAmorphous silicon solar cells. New York: Wiley, 1986.
Знайти повний текст джерелаFahrner, Wolfgang Rainer, ed. Amorphous Silicon / Crystalline Silicon Heterojunction Solar Cells. Berlin, Heidelberg: Springer Berlin Heidelberg, 2013. http://dx.doi.org/10.1007/978-3-642-37039-7.
Повний текст джерелаFahrner, Wolfgang Rainer. Amorphous Silicon / Crystalline Silicon Heterojunction Solar Cells. Berlin, Heidelberg: Springer Berlin Heidelberg, 2013.
Знайти повний текст джерелаIkhmayies, Shadia, ed. Advances in Silicon Solar Cells. Cham: Springer International Publishing, 2018. http://dx.doi.org/10.1007/978-3-319-69703-1.
Повний текст джерелаA, Green Martin, ed. High efficiency silicon solar cells. Aedermannsdorf, Switzerland: Trans Tech SA, 1987.
Знайти повний текст джерелаЧастини книг з теми "Silicon solar cells"
Zweibel, Ken. "Silicon Cells." In Harnessing Solar Power, 101–11. Boston, MA: Springer US, 1990. http://dx.doi.org/10.1007/978-1-4899-6110-5_6.
Повний текст джерелаZweibel, Ken. "Silicon Cells." In Harnessing Solar Power, 113–27. Boston, MA: Springer US, 1990. http://dx.doi.org/10.1007/978-1-4899-6110-5_7.
Повний текст джерелаMartinuzzi, Santo, Abdelillah Slaoui, Jean-Paul Kleider, Mustapha Lemiti, Christian Trassy, Claude Levy-Clement, Sébastien Dubois, et al. "Silicon Solar Cells silicon solar cell , Crystalline." In Solar Energy, 226–69. New York, NY: Springer New York, 2013. http://dx.doi.org/10.1007/978-1-4614-5806-7_461.
Повний текст джерелаMartinuzzi, Santo, Abdelillah Slaoui, Jean-Paul Kleider, Mustapha Lemiti, Christian Trassy, Claude Levy-Clement, Sébastien Dubois, et al. "Silicon Solar Cells silicon solar cell , Crystalline." In Encyclopedia of Sustainability Science and Technology, 9196–240. New York, NY: Springer New York, 2012. http://dx.doi.org/10.1007/978-1-4419-0851-3_461.
Повний текст джерелаMertens, R. "Crystalline Silicon Solar Cells." In Semiconductor Silicon, 339–44. Berlin, Heidelberg: Springer Berlin Heidelberg, 1994. http://dx.doi.org/10.1007/978-3-642-74723-6_27.
Повний текст джерелаWronski, Christopher R., and Nicolas Wyrsch. "Silicon Solar Cells silicon solar cell , Thin-film silicon solar cell thin-film." In Solar Energy, 270–322. New York, NY: Springer New York, 2013. http://dx.doi.org/10.1007/978-1-4614-5806-7_462.
Повний текст джерелаGoetzberger, Adolf, Joachim Knobloch, and Bernhard Voß. "Solar Power." In Crystalline Silicon Solar Cells, 5–7. Chichester, UK: John Wiley & Sons, Ltd, 2014. http://dx.doi.org/10.1002/9781119033769.ch2.
Повний текст джерелаWronski, Christopher R., and Nicolas Wyrsch. "Silicon Solar Cells silicon solar cell , Thin-film silicon solar cell thin-film." In Encyclopedia of Sustainability Science and Technology, 9240–92. New York, NY: Springer New York, 2012. http://dx.doi.org/10.1007/978-1-4419-0851-3_462.
Повний текст джерелаCai, Boyuan, and Baohua Jia. "Nanophotonics silicon solar cells." In Silicon Nanomaterials Sourcebook, 485–98. Boca Raton, FL : CRC Press, Taylor & Francis Group, [2017] | Series: Series in materials science and engineering: CRC Press, 2017. http://dx.doi.org/10.4324/9781315153551-24.
Повний текст джерелаZhang, Chunfu, Jincheng Zhang, Xiaohua Ma, and Qian Feng. "Crystalline Silicon Solar Cells." In Semiconductor Photovoltaic Cells, 65–126. Singapore: Springer Singapore, 2021. http://dx.doi.org/10.1007/978-981-15-9480-9_3.
Повний текст джерелаТези доповідей конференцій з теми "Silicon solar cells"
Bhat, P. K., D. S. Shen, and R. E. Hollingsworth. "Stability of amorphous silicon solar cells." In Amorphous silicon materials and solar cells. AIP, 1991. http://dx.doi.org/10.1063/1.41008.
Повний текст джерелаLuderer, Christoph, Henning Nagel, Frank Feldmann, Jan Christoph Goldschmidt, Martin Bivour, and Martin Hermle. "PERC-like Si bottom solar cells for industrial perovskite-Si tandem solar cells." In SiliconPV 2021, The 11th International Conference on Crystalline Silicon Photovoltaics. AIP Publishing, 2022. http://dx.doi.org/10.1063/5.0097026.
Повний текст джерелаBrandt, Martin S., and Martin Stutzmann. "Investigation of the Staebler-Wronski effect in a-Si:H by spin-dependent photoconductivity." In Amorphous silicon materials and solar cells. AIP, 1991. http://dx.doi.org/10.1063/1.41015.
Повний текст джерелаRedfield, David, and Richard H. Bube. "The rehybridized two-site (RTS) model for defects in a-Si:H." In Amorphous silicon materials and solar cells. AIP, 1991. http://dx.doi.org/10.1063/1.41016.
Повний текст джерелаHata, N., and S. Wagner. "The application of a comprehensive defect model to the stability of a-Si:H." In Amorphous silicon materials and solar cells. AIP, 1991. http://dx.doi.org/10.1063/1.41017.
Повний текст джерелаMcMahon, T. J. "Defect equilibration in device quality a-Si:H and its relation to light-induced defects." In Amorphous silicon materials and solar cells. AIP, 1991. http://dx.doi.org/10.1063/1.41018.
Повний текст джерелаCohen, J. David, and Thomas M. Leen. "Investigation of defect reactions involved in metastability of hydrogenated amorphous silicon." In Amorphous silicon materials and solar cells. AIP, 1991. http://dx.doi.org/10.1063/1.41019.
Повний текст джерелаStreet, R. A. "Metastability and the hydrogen distribution in a-Si:H." In Amorphous silicon materials and solar cells. AIP, 1991. http://dx.doi.org/10.1063/1.41031.
Повний текст джерелаBennett, M., and K. Rajan. "Thermal annealing of photodegraded a-SiGe:H solar cells." In Amorphous silicon materials and solar cells. AIP, 1991. http://dx.doi.org/10.1063/1.41007.
Повний текст джерелаFuhs, W., H. Branz, W. Jackson, D. Redfield, B. Street, and M. Stutzmann. "Panel on metastability modeling." In Amorphous silicon materials and solar cells. AIP, 1991. http://dx.doi.org/10.1063/1.41009.
Повний текст джерелаЗвіти організацій з теми "Silicon solar cells"
Hall, R. B., C. Bacon, V. DiReda, D. H. Ford, A. E. Ingram, J. Cotter, T. Hughes-Lampros, J. A. Rand, T. R. Ruffins, and A. M. Barnett. Thin silicon solar cells. Office of Scientific and Technical Information (OSTI), December 1992. http://dx.doi.org/10.2172/10121623.
Повний текст джерелаSinton, R. A., A. Cuevas, R. R. King, and R. M. Swanson. High-efficiency concentrator silicon solar cells. Office of Scientific and Technical Information (OSTI), November 1990. http://dx.doi.org/10.2172/6343818.
Повний текст джерелаMcGehee, Michael. Perovskite on Silicon Tandem Solar Cells. Office of Scientific and Technical Information (OSTI), March 2021. http://dx.doi.org/10.2172/1830219.
Повний текст джерелаBlack, Marcie. Intermediate Bandgap Solar Cells From Nanostructured Silicon. Office of Scientific and Technical Information (OSTI), October 2014. http://dx.doi.org/10.2172/1163091.
Повний текст джерелаBlack, Marcie. Intermediate Bandgap Solar Cells From Nanostructured Silicon. Office of Scientific and Technical Information (OSTI), October 2014. http://dx.doi.org/10.2172/1163251.
Повний текст джерелаHaney, R. E., A. Neugroschel, K. Misiakos, and F. A. Lindholm. Frequency-domain transient analysis of silicon solar cells. Office of Scientific and Technical Information (OSTI), March 1989. http://dx.doi.org/10.2172/6346849.
Повний текст джерелаRohatgi, A., A. W. Smith, and J. Salami. Modelling and fabrication of high-efficiency silicon solar cells. Office of Scientific and Technical Information (OSTI), October 1991. http://dx.doi.org/10.2172/10104501.
Повний текст джерелаHall, R. B., C. Bacon, V. DiReda, D. H. Ford, A. E. Ingram, S. M. Lampo, J. A. Rand, T. R. Ruffins, and A. M. Barnett. Silicon-film{trademark} on ceramic solar cells. Final report. Office of Scientific and Technical Information (OSTI), February 1993. http://dx.doi.org/10.2172/10135001.
Повний текст джерелаRand, J. A., A. M. Barnett, and J. C. Checchi. Large-area Silicon-Film{trademark} panels and solar cells. Office of Scientific and Technical Information (OSTI), January 1997. http://dx.doi.org/10.2172/453487.
Повний текст джерелаAlbright, C. E., and D. O. Holte. Diffusion welding of electrical interconnects to silicon solar cells. Office of Scientific and Technical Information (OSTI), May 1989. http://dx.doi.org/10.2172/6300204.
Повний текст джерела