Готові списки джерел за темами / Silicon Based Nanostructure

Добірка наукової літератури з теми "Silicon Based Nanostructure"

Автор: Grafiati
Опубліковано: 7 вересня 2023

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Статті в журналах з теми "Silicon Based Nanostructure"

1

Yang, Xiaoyu, Ling Tong, Lin Wu, Baoguo Zhang, Zhiyuan Liao, Ao Chen, Yilai Zhou, Ying Liu, and Ya Hu. "Research progress of carbon-assisted etching of silicon nanostructures." Journal of Physics: Conference Series 2076, no. 1 (November 1, 2021): 012060. http://dx.doi.org/10.1088/1742-6596/2076/1/012060.

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Abstract Silicon nanostructures are attracting growing attention due to their properties and promising application prospects in solar energy conversion and storage devices, thermoelectric devices, lithium-ion batteries, and biosensing technologies. The large-scale and low-cost preparation of silicon nanostructures is critical for silicon-based advanced functional devices commercialization. In this paper, the feasibility and mechanism of silicon nanostructure fabricated by non-metallic carbon catalytic etching, as well as the currently existing problems and future development trend are reviewed.
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2

He, Minghao, Mingzhao Li, and Zeyu Sun. "The Development of Si Anode Materials by Nanotechnology for Lithium-ion Battery." E3S Web of Conferences 308 (2021): 01007. http://dx.doi.org/10.1051/e3sconf/202130801007.

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Анотація:
Nowadays, lithium-ion batteries (LIBs) are applied in many fields for their high energy density, low cost, and long cycle life, highly appreciated in a commercial application. Anode materials, a vital factor contributing to high specific capacity, have caught great attention in next-generation LIBs development. Silicon (Si) has been generally considered one of the best substitutes for the commercial carbon-based anodes of lithium-ion batteries due to its extremely high theoretical capacity, excellent charge-discharge performance, and low cost compared with other anode materials. In this review, various silicon-based materials, including nanostructured silicon and silicon composite materials, are summarized, and both advantages and challenges are analyzed. The article emphasizes the remarkable electrochemical characteristics and significant improvement of battery performance by applying nanostructure and silicon composites conjugates. Besides, the challenges and outlook on the nanostructure design of Si and silicon composites are presented.
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3

Bhalla, Nikhil, Aditya Jain, Yoonjoo Lee, Amy Q. Shen, and Doojin Lee. "Dewetting Metal Nanofilms—Effect of Substrate on Refractive Index Sensitivity of Nanoplasmonic Gold." Nanomaterials 9, no. 11 (October 27, 2019): 1530. http://dx.doi.org/10.3390/nano9111530.

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Анотація:
The localized surface plasmon resonance (LSPR) sensitivity of metal nanostructures is strongly dependent on the interaction between the supporting substrate and the metal nanostructure, which may cause a change in the local refractive index of the metal nanostructure. Among various techniques used for the development of LSPR chip preparation, solid-state dewetting of nanofilms offers fast and cost effective methods to fabricate large areas of nanostructures on a given substrate. Most of the previous studies have focused on the effect of the size, shape, and inter-particle distance of the metal nanostructures on the LSPR sensitivity. In this work, we reveal that the silicon-based supporting substrate influences the LSPR associated refractive index sensitivity of gold (Au) nanostructures designed for sensing applications. Specifically, we develop Au nanostructures on four different silicon-based ceramic substrates (Si, SiO2, Si3N4, SiC) by thermal dewetting process and demonstrate that the dielectric properties of these ceramic substrates play a key role in the LSPR-based refractive index (RI) sensitivity of the Au nanostructures. Among these Si-supported Au plasmonic refractive index (RI) sensors, the Au nanostructures on the SiC substrates display the highest average RI sensitivity of 247.80 nm/RIU, for hemispherical Au nanostructures of similar shapes and sizes. Apart from the significance of this work towards RI sensing applications, our results can be advantageous for a wide range of applications where sensitive plasmonic substrates need to be incorporated in silicon based optoelectronic devices.
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4

Mo, Chen, Jingbo Liu, Dongshan Wei, Honglei Wu, Qiye Wen, and Dongxiong Ling. "An Optically Tunable THz Modulator Based on Nanostructures of Silicon Substrates." Sensors 20, no. 8 (April 13, 2020): 2198. http://dx.doi.org/10.3390/s20082198.

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Анотація:
Nanostructures can induce light multireflection, enabling strong light absorption and efficient photocarrier generation. In this work, silicon nanostructures, including nanocylinders, nanotips, and nanoholes, were proposed as all-optical broadband THz modulators. The modulation properties of these modulators were simulated and compared with finite element method calculations. It is interesting to note that the light reflectance values from all nanostructure were greatly suppressed, showing values of 26.22%, 21.04%, and 0.63% for nanocylinder, nanohole, and nanotip structures, respectively, at 2 THz. The calculated results show that under 808 nm illumination light, the best modulation performance is achieved in the nanotip modulator, which displays a modulation depth of 91.63% with a pumping power of 60 mW/mm2 at 2 THz. However, under shorter illumination wavelengths, such as 532 nm, the modulation performance for all modulators deteriorates and the best performance is found with the nanohole-based modulator rather than the nanotip-based one. To further clarify the effects of the nanostructure and wavelength on the THz modulation, a graded index layer model was established and the simulation results were explained. This work may provide a further theoretical guide for the design of optically tunable broadband THz modulators.
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Galeotti, Francesco, Franco Trespidi, and Mariacecilia Pasini. "Breath Figure-Assisted Fabrication of Nanostructured Coating on Silicon Surface and Evaluation of Its Antireflection Power." Journal of Nanomaterials 2016 (2016): 1–8. http://dx.doi.org/10.1155/2016/3502310.

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Анотація:
We report our recent results on the fabrication of nanostructured polymer layers aimed at developing efficient antireflection coating on silicon. The proposed manufacturing approach is based on self-assembly and relies on breath figure formation. By simple and straightforward operations, we are able to produce different nanostructured coatings: densely packed nanodomes, randomly distributed nanopores, and multilayered close-packed nanopores. By optical reflectivity measurements on coated silicon wafers, we show that the latter type of nanostructure is able to reduce the reflectivity of standard silicon surface (≈40% at 450 nm) to about 10%.
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6

Wallace, Steaphan M., Thiyagu Subramani, Wipakorn Jevasuwan, and Naoki Fukata. "Conversion of Amorphous Carbon on Silicon Nanostructures into Similar Shaped Semi-Crystalline Graphene Sheets." Journal of Nanoscience and Nanotechnology 21, no. 9 (September 1, 2021): 4949–54. http://dx.doi.org/10.1166/jnn.2021.19329.

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Анотація:
Graphene sheets displaying partial crystallinity and nanowire structures were formed on a silicon substrate with silicon nanowires by utilizing an amorphous carbon source. The carbon source was deposited onto the silicon nanostructured substrate by breaking down a polymer precursor and was crystallized by a nickel catalyst during relatively low temperature inert gas annealing. The resulting free-standing graphene-based material can remain on the substrate surface after catalyst removal or can be removed as a separate film. The film is flexible, continuous, and closely mimics the silicon nanostructure. This follows research on similar solid carbon precursor derived semi-crystalline graphene synthesis procedures and applies it to complex silicon nanostructures. This work examined the progression of the carbon, finding that it migrates through the thin film catalyst and forms the graphene only on the other side, and that the process can successfully be used to form 3D shaped graphene films. Semi-crystalline graphene has the possible application of being flexible transparent electrodes, and the 3D shaping opens the possibility of more complex configurations and applications.
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7

Gupta, N., G. F. Alapatt, R. Podila, R. Singh, and K. F. Poole. "Prospects of Nanostructure-Based Solar Cells for Manufacturing Future Generations of Photovoltaic Modules." International Journal of Photoenergy 2009 (2009): 1–13. http://dx.doi.org/10.1155/2009/154059.

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Анотація:
We present a comprehensive review on prospects for one-, two-, or three-dimensional nanostructure-based solar cells for manufacturing the future generation of photovoltaic (PV) modules. Reducing heat dissipation and utilizing the unabsorbed part of the solar spectrum are the key driving forces for the development of nanostructure-based solar cells. Unrealistic assumptions involved in theoretical work and the tendency of stretching observed experimental results are the primary reasons why quantum phenomena-based nanostructures solar cells are unlikely to play a significant role in the manufacturing of future generations of PV modules. Similar to the invention of phase shift masks (to beat the conventional diffraction limit of optical lithography) clever design concepts need to be invented to take advantage of quantum-based nanostructures. Silicon-based PV manufacturing will continue to provide sustained growth of the PV industry.
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8

BAI, J., and X. C. ZENG. "SILICON-BASED HALF-METAL: METAL-ENCAPSULATED SILICON NANOTUBE." Nano 02, no. 02 (April 2007): 109–14. http://dx.doi.org/10.1142/s179329200700043x.

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We performed first-principles calculation to show that a host–guest silicon nanostructure can exhibit half-metallic properties, wherein the host is a single-walled hexagonal silicon nanotube while the guest is a hybrid atomic chain of Mn and Co (encapsulated in the host nanotube). The calculated electronic band structures indicate that the Fermi level intersects only in the spin-up band, whereas the spin-down band exhibits semiconducting characteristics.
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9

Azmi, M. Safwan, Sharipah Nadzirah, and Uda Hashim. "Fabrication of Nanostructure-Based Copper Oxide Biosensor." Advanced Materials Research 1109 (June 2015): 376–80. http://dx.doi.org/10.4028/www.scientific.net/amr.1109.376.

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The purpose of this paper is to give a review of the fabrication of nanostructure-based copper oxide biosensor. This paper briefly covers processes from silicon wafer cleaning, oxidation process, silicon nitride deposition, aluminum metal deposition, pattern transfer, copper oxide sol-gel preparation and coating and lastly IV testing with the results expected from the completed device.Keywords: Nanostruture, copper oxide, biosensor, sol-gel, current-voltage testing.
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10

Al-AJILI, ADWAN. "CONTINUOUS-WAVE PHOTOLUMINESCENCE AND NANOSTRUCTURAL PROPERTIES OF POROUS SILICON." International Journal of Nanoscience 08, no. 03 (June 2009): 311–18. http://dx.doi.org/10.1142/s0219581x09006079.

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The photoluminescence (PL) emitted by porous silicon has been investigated by using the continuous tuneable UV Synchrotron Radiation Source. One sample was investigated for orange PL emission wavelength at temperatures 77–295 K. The PL peak is found to shift to higher frequency with decreasing temperature. Information about the nanostructure of porous silicon has been determined from PL and Extended X-ray Absorption Fine Structure (EXAFS), as well as from electron microscopy. In particular, the optical properties of silicon-based nanostructured materials, obtained from PL and photoluminescence excitation measurements, have been correlated with structural information from Si –K-edge EXAFS. Electron microscopy was used to study the relation between the nanostructure and PL of porous Si , and to investigate porous Si structure. Platelet Si and Si crystallites in porous Si layers were observed. The size of crystallites ranged from 4 to 6.5 nm. Diffraction patterns show these porous Si samples have a crystalline structure.
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Більше джерел

Дисертації з теми "Silicon Based Nanostructure"

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Ruminski, Anne Marie. "Manipulation of surface chemistry and nanostructure in porous silicon-based chemical sensors." Diss., [La Jolla] : University of California, San Diego, 2009. http://wwwlib.umi.com/cr/ucsd/fullcit?p3373085.

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Анотація:
Thesis (Ph. D.)--University of California, San Diego, 2009.
Title from first page of PDF file (viewed October 22, 2009). Available via ProQuest Digital Dissertations. Vita. Includes bibliographical references (p. 194-210).
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2

Ozdemir, Serdar. "Formation, characterization and flow dynamics of nanostructure modified sensitive and selective gas sensors based on porous silicon." Diss., Georgia Institute of Technology, 2011. http://hdl.handle.net/1853/39541.

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Nanopore covered microporous silicon interfaces have been formed via an electrochemical etch for gas sensor applications. Rapid reversible and sensitive gas sensors have been fabricated. Both top-down and bottom-up approaches are utilized in the process. A nano-pore coated micro-porous silicon surface is modified selectively for sub-ppm detection of NH3, PH3, NO, H2S, SO2. The selective depositions include electrolessly generated SnO2, CuxO, AuxO, NiO, and nanoparticles such as TiO2, MgO doped TiO2, Al2O3, and ZrO2. Flow dynamics are analyzed via numerical simulations and response data. A general coating selection method for chemical sensors is established via an extrapolation on the inverse of the Hard-Soft Acid-Base concept.
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3

Seo, Michael. "Plasma-assisted nanofabrication of vertical graphene- and silicon-based nanomaterials and their applications." Thesis, The University of Sydney, 2014. http://hdl.handle.net/2123/12285.

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Анотація:
Scarcity of physical resources, increasing concerns for safety and hazardous waste disposal which affects the environment drove the current nanoscience research to focus on developing low-cost, green and environmentally friendly method of obtaining nanomaterials. Yet, developing such smart and innovative processes is at premature stage. Over a few decades, many nanomaterials have been found and investigated. Amongst many nanomaterials, carbon and silicon nanomaterials attracted immense attention due to their abundance, low cost, unique and tunable properties which are promising for many applications. However, making nanostructure with uniformity and desirable properties is often difficult due to a lack of precise control which inherits from fabrication process. Furthermore, many techniques cannot satisfy green and environmentally friendly synthesis of mentioned nanomaterials. Therefore, efficient, effective and environmentally friendly way to create mentioned nanostructures with tunable properties remains a major challenge. Over a few decades, many investigations demonstrated that plasma technique can create uniform nanostructure in an environmentally friendly way which holds great promise as a versatile nanofabrication tool. Therefore, in this thesis, I investigate the plasma aided fabrication of Nobel Prize winning graphene related material called vertical graphenes will be discussed in details. Vertical graphene features are expected to be promising for a host of applications, from energy storage devices to gas detection. Therefore, I will explore the potential of vertical graphenes in diverse applications. Furthermore, green way of creating vertical graphenes using natural precursors from different states of matter will also be investigated. Following on from investigation of vertical graphenes, I will also demonstrate controllable, green synthesis of silicon based nanostructures without hazardous silicon precursor material using plasma-assisted methods.
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4

Berencén, Ramírez Yonder Antonio. "Rare earth- and Si nanostructure-based light emitting devices for integrated photonics." Doctoral thesis, Universitat de Barcelona, 2014. http://hdl.handle.net/10803/285453.

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This thesis presents experimental work on developing rare-earth ions and Si nanostructures as a material platform for light emitting devices (LEDs) in the visible and near-infrared range. The realization of the different electroluminescent devices, based on a single, bi- or tri-layer approach of silicon oxide and/or silicon nitride co-doped or not with rare earth ions, is successfully performed. Several complementary metal-oxide-semiconductor (CMOS) compatible fabrication techniques such as co-magnetron sputtering, plasma-enhanced chemical vapor deposition (PECVD), low-pressure chemical vapor deposition (LPCVD) and ion implantation are used. By using characterization techniques such as time of flight secondary ion mass spectrometry (TOF-SIMS), secondary ion mass spectrometry (SIMS), X-ray photoelectron spectroscopy (XPS), energy-filtered transmission electron microscopy (EFTEM), focused ion beam (FIB) and ellipsometry, the structural and compositional properties of the studied active layers are determined. In addition, electro-optical properties at room and at high temperatures (25 0C – 300 0C) under quasi-static and dynamic regimes are studied in both visible and near-infrared spectral region. Typically, the used electro-optical techniques have been current-voltage, capacitance-voltage, charge to breakdown, electroluminescence (EL)-current, EL-voltage and time-resolved EL.
Esta tesis presenta un trabajo experimental en el desarrollo de iones de tierras raras y nanoestructuras de Si como plataforma de materiales para dispositivos de emisión de luz (LEDs) en el rango visible e infrarrojo cercano. Se han fabricado diferentes dispositivos electroluminiscentes basados en capas simples, dobles o triples de óxido de silicio y/o nitruro de silicio dopados o no con tierras raras. Para ello se han empleado varias técnicas de fabricación compatibles con la tecnología CMOS; a saber, depósito de vapor químico asistido por plasma (PECVD), pulverización catódica mediante magnetrón, depósito de vapor químico a baja presión (LPCVD) e implantación de iones. Así mismo, las propiedades estructurales y de composición de las capas fabricadas han sido determinadas mediante el uso de técnicas de caracterización tales como TOF-SIMS, SIMS, XPS, EFTEM, FIB y elipsometría. Además, a temperatura ambiente y altas temperaturas (25 0C – 300 0C) se han estudiado las propiedades electro-ópticas en los regímenes cuasi-estático y dinámico. Por lo general, las técnicas electro-ópticas empleadas fueron corriente-voltaje, capacitancia-voltaje, estudio de carga hasta la ruptura, electroluminiscencia (EL)-corriente, EL-voltaje y EL resuelta en tiempo.
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5

Jaffal, Ali. "Single photon sources emitting in the telecom band based on III-V nanowires monolithically grown on silicon." Thesis, Lyon, 2020. http://www.theses.fr/2020LYSEI019.

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Une source de photons uniques (SPU) dans la bande télécom, épitaxiées sur un substrat de silicium (Si), est le Saint Graal pour réaliser des dispositifs CMOS compatibles pour les technologies de l'information optiques. Pour atteindre cet objectif, nous proposons la croissance monolithique de Boîte Quantiques-Nanofils (BQ-NFs) InAs/InP sur des substrats de silicium par épitaxie par jet moléculaire (EJM) en utilisant la méthode vapeur-liquide-solide (VLS). Au début, nous avons concentré nos efforts sur l'optimisation des conditions de croissance afin d'obtenir une densité de NF ultra-faible sans effort avant ou après la croissance, ce qui nous permet d'exciter optiquement un seul BQ-NF sur l'échantillon tel qu'il a été épitaxiées et de préserver la croissance monolithique sur le silicium. Par la suite, nous avons porté notre attention sur l'amélioration de l'extraction de la lumière de la BQ InAs du guide d'onde InP NF vers l'espace libre pour obtenir une source lumineuse avec un profil d'émission en Champ Lointain (CL) gaussien afin de coupler efficacement les photons individuels à une fibre optique monomode. Cela a été réalisé en contrôlant la géométrie de NF pour obtenir des NFs en forme d'aiguille avec un très petit angle de conicité et un diamètre de NF adapté pour supporter un guide d'onde monomode. Une telle géométrie a été produite avec succès en utilisant un équilibre induit par la température sur les croissances axiale et radiale pendant la croissance des NFs catalysée par l'or. Des mesures optiques ont confirmé la nature mono-photonique des photons émis avec g2(0) = 0,05 et un profil d'émission gaussien en CL avec un angle d'émission θ = 30°. Pour obtenir des performances optimales, nous avons ensuite abordé une question cruciale dans cette géométrie de NF représentée par l'état de polarisation inconnu des photons émis. Pour résoudre ce problème, une solution consiste à intégrer un seul BQ dans un NF avec une section asymétrique optimisée pour inhiber un état de polarisation et améliorer l'efficacité d'émission de l'autre. Une stratégie de croissance originale a été proposée, permettant d'obtenir des photons à haut degré de polarisation linéaire parallèle à l'axe allongé des NFs asymétriques. Enfin, l'encapsulation des BQ-NFs dans des guides d'ondes en silicium amorphe (a-Si) a ouvert la voie à la production des dispositifs des SPU entièrement intégrés sur Si dans un avenir proche
A telecom band single photon source (SPS) monolithically grown on silicon (Si) substrate is the Holy Grail to realize CMOS compatible devices for optical-based information technologies. To reach this goal, we propose the monolithic growth of InAs/InP quantum dot-nanowires (QD-NWs) on silicon substrates by molecular beam epitaxy (MBE) using the vapour-liquid-solid (VLS) method. In the beginning, we have focused our efforts on optimizing the growth conditions aiming at achieving ultra-low NWs density without any pre-growth or post-growth efforts allowing us to optically excite a single QD-NW on the as-grown sample and to preserve the monolithic growth on silicon. Subsequently, we have turned our attention on enhancing the InAs QD light extraction from the InP NW waveguide towards the free space to achieve a bright source with a Gaussian far-field (FF) emission profile to efficiently couple the single photons to a single-mode optical fiber. This was done by controlling the NW geometry to obtain needlelike-tapered NWs with a very small taper angle and a NW diameter tailored to support a single mode waveguide. Such a geometry was successfully produced using a temperature-induced balance over axial and radial growths during the gold-catalyzed growth of the NWs. Optical measurements have confirmed the single photon nature of the emitted photons with g2(0) = 0.05 and a Gaussian FF emission profile with an emission angle θ = 30°. For optimal device performances, we have then tackled a crucial issue in such NW geometry represented by the unknown polarization state of the emitted photons. To solve this issue, one solution is to embed a single QD in a NW with an asymmetrical cross-section optimized to inhibit one polarization state and to improve the emission efficiency of the other one. An original growth strategy was proposed permitting us to obtain highly linearly polarized photons along the elongated axis of the asymmetrical NWs. Finally, the encapsulation of the QD-NWs within amorphous silicon (a-Si) waveguides have opened the path to produce fully integrated SPSs devices on Si in the near future
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Guzman-Verri, Gian Giacomo. "Electronic Properties of Silicon-based Nanostructures." Wright State University / OhioLINK, 2006. http://rave.ohiolink.edu/etdc/view?acc_num=wright1158515644.

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Lalic, Nenad. "Light emitting devices based on silicon nanostructures." Doctoral thesis, KTH, Electronic Systems Design, 2000. http://urn.kb.se/resolve?urn=urn:nbn:se:kth:diva-2943.

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Анотація:

Although silicon is the dominant semiconductor today, lightemitting devices are currently based on compound semiconductorsdue to their direct band-gap, which promotes fast radiativerecombination. However, in nanometer-size silicon structures,carrier confinement enhances the radiative recombination,while, at the same time, suppresses diffusion to non-radiativerecombination centra, resulting in a significant increase inlight emission efficiency. Moreover, the band-gap is wideningas the crystal size is reduced (quantum confinement), enablinglight emission in the visible range. In this work, twodifferent approaches to manufacture a light emitting diode(LED) in silicon have been investigated. The first type ofsilicon LED's is based on porous silicon (PSi) and manufacturedby electrochemical etching of a previously formed pn diodestructure. After optimizing the etching process, PSi LED's wereproduced with an external quantum efficiency of ~0.2% underpulsed excitation, more than an order of magnitude higher thanpreviously reported. Tunability of the emission wavelength inthe range 1.6-2eV was demonstrated by varying the etchingparameters. The EL wavelength is determined by the band-gap ofthe nanocrystals, i. e. their size, as evidenced by a lowerthreshold for longer EL wavelengths, due to lower barriers forinjection into larger crystallites. The EL decay after the biaspulse follows a stretched exponential shape, in agreement witha model involving exciton migration in partially interconnectednanocrystals. Under constant bias, the EL and forward currentare decreasing, due to charging, caused by carrier trapping inthe porous network. After the etching the hydrogen passivatedporous silicon surface is being gradually oxidized, resultingin increased barriers, permanent conductivity reduction and ELdegradation. To improve stability, the second LED approach,based on Si nanocrystals embedded in SiO2, was studied. Nanocrystals were formed by theimplantation of Si into thermally grown SiO2and by subsequent annealing at high temperatures(mostly 1100°C). Photoluminescence investigation showedthat luminescence properties are dependent on nanocrystal sizeand similar to those of PSi. However, decay shapes and timeconstants revealed a stronger isolation of the nanocrystalsthan in PSi. For the EL, good current transport properties werenecessary. That required a thin SiO2layer and efficient injection, realized using anin-situ doped poly-Si cap layer. The Si nanocrystal LED's werestable, although the total light intensity was lower than inPSi, as a consequence of a thin active layer.

Key words: Electroluminescence, photoluminescence, lightemitting diode, porous materials, nanostructured materials,silicon, etching, anodized layers, ion implantation.

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8

Chau, Chien Fat. "A nanostructured porous silicon based drug delivery device." Thesis, University of Southampton, 2009. https://eprints.soton.ac.uk/69237/.

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Targeted and controlled delivery of therapeutic agents on demand is pivotal in realising the efficacy of many pharmaceuticals. The design and fabrication of a novel, electrically-addressable, porous structure-based drug delivery device for the controlled release of therapeutic proteins and peptides, are described in this thesis. The initial prototype microdevice design incorporates a porous polysilicon (PPSi) structure as a drug reservoir. Two alternative methods were investigated to fabricate the PPSi structure: i) the chemical stain etching method; ii) a reactive ion etching (RIE) method through a masking template. Random pores, with irregular pore shape and size in the micro- to mesoporous regime (< 50 nm), were obtained using the stain etching method but this method suffered from poor reproducibility and non-uniformity. Two novel RIE approaches were investigated to fabricate ordered PPSi structures; two different masking templates were investigated – a porous anodic alumina (PAA) and a metal mask with hexagonally arranged holes produced by a novel nanosphere lithography (NSL) technique. A quasi-ordered PAA template with pore diameters in the region of 50 nm was fabricated but was not suitable for the subsequent proposed RIE process. By using the NSL technique, quasi-ordered PPSi structures with tapered pore profiles, were obtained. This is the first demonstration of the fabrication of PPSi with ordered pores of sizes in the macropore range of ~ 370 nm. A revised silicon-based prototype microdevice was designed and fabricated. The microdevice incorporates a nanostructured, quasi-ordered porous silicon (PSi) as a drug reservoir and an integrated heater and temperature sensor as an active control mechanism. The PSi structure was fabricated using a modified NSL technique and a Bosch-based RIE process. Hexagonally arranged cylindrical pores with diameters between ~75 nm and ~120 nm, and depths in the range of ~330 nm and 500 nm, were obtained. The novel fabrication techniques investigated here are simple and versatile; both p-type and n-type PSi structures have been successfully fabricated. Proof-of-concept studies, using the revised prototype drug delivery microdevices, suggested that the nanostructured PSi would be suitable for the passive release of an intermediate-sized (~23 000 Dalton) model protein. It is envisaged that the microdevice has the potential to deliver osteoinductive growthfactors, on demand, to the site of fracture, in a controlled and sustainable manner, as a first step to an intelligent therapeutic system for skeletal regeneration.
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9

Dohnalovà, Kater̆ina. "Study of optical amplification in silicon based nanostructures." Université Louis Pasteur (Strasbourg) (1971-2008), 2007. https://publication-theses.unistra.fr/public/theses_doctorat/2007/DOHNALOVA_Katerina_2007.pdf.

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Le but principal de ce travail fut de préparer un matériau photo-luminescent à base de nano-cristaux de Silicium dans une matrice de silice (SiO2) de qualité optique suffisante pour permettre l'observation d'un gain optique. Des nano-cristaux de silicium peu oxydés de tailles comprises entre 2 et 3 nm ont été obtenus par abrasion électrochimique de wafer de silicium. Les nano-cristaux avec une concentration variable permettant l'observation de leur émission stimulée sont dilués dans une matrice de silice obtenue par procédé sol-gel. Un dispositif optique dit "de zone à longueur variable" ("Variable Stripe Length" VSL) a été utilisé pour la mesure du gain optique des nano-cristaux. Cependant cette méthode seule reste peu fiable pour les matériaux à faible gain optiques tels que les nano-cristaux de silicium. Pour cette raison nous avons combiné la méthode VSL avec celle du "spot d'excitation déplacé " ("Shifting Excitation Spot" SES). Ceci nous permet d'observer des gains faibles qui n'auraient pas pu être atteint avec la méthode VSL seule. Nos résultats montrent clairement l'apparition d'un gain sous différentes conditions d'excitations. Pour préparer un laser il est nécessaire d'avoir un materiau, montrant du gain optique, mais il faut aussi appliquer une contra réaction optique suffisante. L'utilisation d'une cavité optique externe nécessite des échantillons de grande qualité optique. Ceci n'est pas compatible avec un gain élevé qui demande une concentration très forte en nano-cristaux de silicium. Pour cela nous avons construit un laser à "cavité à contra réaction distribuée" ("Distributed Feedback Laser" DFL). Dans ce type de cavité, la contra réaction est distribuée sur l'ensemble de l'échantillon. Le pas du réseau (166 nm) est inférieure aux variations moyennes de densité (≈0. 5-1. 0 μm) et peut être facilement modifié. Nous espérons ainsi obtenir un gain faible mais suffisant pour être observable. La cavité DFL est tout d'abord calibrée à l'aide de différents colorants dilués dans une solution de méthanol où nous avons observé des modes laser biens définis. Des modes d'émissions laser similaires (des pics plus larges et moins intenses que dans le cas des colorants) ont été obtenus dans nos échantillons Si-ncs/SiO2. Ceci est principalement dû à la moindre qualitéoptique de nos échantillons. Pour comprendre les précédentes observations, nous avons developpé un modèle théorique simple nous permettant de retrouver et d'expliquer les modes experimentaux en jouant sur la variation de densité et les caractéristiques des Si-ncs. L'effet de la contra réaction de la cavité DFL sur nos échantillons est clairement identifié par ce modèle. Ceci nous permet d'entrevoir de nouvelles perspectives pour la caractérisation optique et l'amélioration de nos échantillons
The aim of this work was to prepare light-emitting structure on the basis of silicon nanocrystals (Si-ncs) embedded in a silicon dioxide (SiO2) based matrix of a sufficiently good optical quality and stable emission properties, which exhibits positive optical gain and can be used as an active material in a laser cavity. The technique of sample preparation is based on a combination of the modified electrochemical etching of silicon wafers and the SiO2 based sol-gel processing. This method enables us to achieve relatively small oxidized Si-ncs (≈2-3 nm), embedded at virtually arbitrary volume fraction in a SiO2 based matrix, which is believed to be advantageous for easier stimulated emission (StE) onset observation. The optical gain coefficient was measured using the standard "Variable Stripe Length" (VSL) method, the application of which, however, is limited for low gain. Therefore we implemented a supplemental "Shifting Excitation Spot" (SES) method, enabling us to determine the optical gain coefficient even of such a small magnitude that will not be recognized by the VSL method itself. We observed a positive net gain coecient originating from the StE in dierent Si-ncs/SiO2 samples under different excitation and detection conditions. To prepare a laser system, a positive net gain observation is essential as well as a positive optical feedback. Using an external cavity as a resonator requires a high optical quality sample. This is, however, hardly achievable under the high Si-ncs volume fraction requirements for the StE onset. Because of that we decided to build an optically induced "Distributed Feedback Laser" (DFL) system, where the cavity is distributed over the whole sample volume and the cavity grating constant (≈166 nm) is lower than expected mean homogeneity length in our sample (≈0. 5-1. 0 μm). Therefore, a positive but low effect on the emission of Si-ncs is expected. Moreover, such type of DFL cavity is easily tuneable. The functionality of the DFL setup was tested using reference organic dye solutions in methanol, where a tuneable lasing action was successfully achieved. Similar tuneable cavity modes were also observed in different Si-ncs/SiO2 samples, however, of broader widths and less intense, compared to the organic dyes, which is mainly given by their lower optical quality. To understand and describe the mode selection in such a material, we developed a simple theoretical model, enabling us to determine the selected mode shape with respect to the sample homogeneity length and the character of the inhomogeneities. We proved the active feedback of the DFL cavity on the emission of our Si-ncs/SiO2 samples and proposed some further steps for future sample improvement
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10

Petukhou, Yu A., V. V. Uglov, N. T. Kvasov, A. V. Punko, I. L. Doroshevich, V. M. Astashynski, and A. M. Kuzmitski. "Formation of silicon-based nanostructures by compression plasma flows." Thesis, Видавництво СумДУ, 2011. http://essuir.sumdu.edu.ua/handle/123456789/20860.

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The use of compression flows (CPF) for the formation of metal and silicide nanostructures for data storage devices, thermoelectric materials and solar cells is presented. The action of CPF with injected metallic powder results in the formation of coatings composed of spherical clusters with complex structure: each submicron cluster (0,1-0,2 μm radius) is formed from a number of nanosized ones (10-25 nm radius). The action of CPF on binary “metal-silicon” systems provides formation of branched silicon dendrites (tip radius ~ 200 nm, primary spacing ~ 1,2 μm); interdendritic space is filled with nanostructured (50-100 nm) “silicide-silicon” and “monosilicide-disilicide” composite due to melting of the surface layer, rapid solidification (~ 10-3 m/s) and constitutional overcooling. Mechanisms of formation of nanostructured composites on silicon surface and in thick surface layers is discussed in terms of order parameter evolution and non-equilibrium solidification models. When you are citing the document, use the following link http://essuir.sumdu.edu.ua/handle/123456789/20860
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Книги з теми "Silicon Based Nanostructure"

1

P, Legrand A., and Senemaud C, eds. Nanostructured silicon-based powders and composites. London: Taylor & Francis, 2003.

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Royal Society of Chemistry (Great Britain), ed. Silica-based materials for advanced chemical applications. Cambridge: RSC Pub., 2009.

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SOI -- na mi ji shu shi dai de gao duan gui ji cai liao: SOI : advanced silicon-based materials for the nanotechnology era. Hefei Shi: Zhongguo ke xue ji shu da xue chu ban she, 2009.

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4

International School of Physics "Enrico Fermi" (1998 Varenna, Italy). Silicon-based microphotonics: From basics to applications : Varenna on Lake Como, Villa Monastero, 21-31 July 1998. Amsterdam: IOS Press, 1999.

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5

Ternon, Céline, ed. Silica and Silicon Based Nanostructures. MDPI, 2022. http://dx.doi.org/10.3390/books978-3-0365-4765-7.

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6

Senemaud, Christiane, and A. P. Legrand. Nanostructured Silicon-based Powders and Composites. Taylor & Francis Group, 2002.

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7

Legrand, Andre Pierre, and Christiane Senemaud. Nanostructured Silicon-Based Powders and Composites. Taylor & Francis Group, 2002.

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8

Nanostructured Silicon-based Powders and Composites. London: Taylor & Francis Group Plc, 2004.

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Legrand, Andre Pierre, and Christine Senemaud. Nanostructured Silicon-Based Powders and Composites. Taylor & Francis Group, 2002.

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10

Legrand, Andre Pierre, and Christiane Senemaud. Nanostructured Silicon-Based Powders and Composites. Taylor & Francis Group, 2002.

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Частини книг з теми "Silicon Based Nanostructure"

1

Offenhäusser, Andreas, Sven Ingebrandt, Michael Pabst, and Günter Wrobel. "Interfacing Neurons and Silicon-Based Devices." In Nanostructure Science and Technology, 287–301. New York, NY: Springer New York, 2009. http://dx.doi.org/10.1007/978-0-387-09459-5_13.

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2

Cahay, M., and S. Bandyopadhyay. "Room Temperature Silicon Spin-Based Transistors." In Nanostructure Science and Technology, 173–94. Boston, MA: Springer US, 2009. http://dx.doi.org/10.1007/978-0-387-78689-6_6.

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3

Latu-Romain, Laurence, and Maelig Ollivier. "SiC-Based One-Dimensional Nanostructure Technologies." In Silicon Carbide One-Dimensional Nanostructures, 87–101. Hoboken, NJ, USA: John Wiley & Sons, Inc., 2015. http://dx.doi.org/10.1002/9781119081470.ch4.

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4

Fang, Jinghua, Igor Levchenko, Morteza Aramesh, Amanda E. Rider, Steven Prawer, and Kostya Ostrikov. "Plasma Enabled Fabrication of Silicon Carbide Nanostructures." In Silicon-based Nanomaterials, 161–78. New York, NY: Springer New York, 2013. http://dx.doi.org/10.1007/978-1-4614-8169-0_8.

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5

Hsueh, Hung-Chung, Guang-Yu Guo, and Steven G. Louie. "Electronic and Optical Properties of Silicon Carbide Nanostructures." In Silicon-based Nanomaterials, 139–59. New York, NY: Springer New York, 2013. http://dx.doi.org/10.1007/978-1-4614-8169-0_7.

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6

Ray, Mallar, Sayak Dutta Gupta, and Atrayee Hazra. "Silicon-based core–shell nanostructures." In Silicon Nanomaterials Sourcebook, 215–62. Boca Raton, FL : CRC Press, Taylor & Francis Group, [2017] | Series: Series in materials science and engineering: CRC Press, 2017. http://dx.doi.org/10.4324/9781315153551-11.

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7

She, Guangwei, Hailong Liu, Lixuan Mu, and Wensheng Shi. "Synthesis, Properties, and Applications of One-Dimensional Transition Metal Silicide Nanostructures." In Silicon-based Nanomaterials, 265–325. New York, NY: Springer New York, 2013. http://dx.doi.org/10.1007/978-1-4614-8169-0_12.

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8

Boarino, Luca, and Giampiero Amato. "Nanostructures Based on Porous Silicon." In Encyclopedia of Nanotechnology, 1–13. Dordrecht: Springer Netherlands, 2015. http://dx.doi.org/10.1007/978-94-007-6178-0_233-2.

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9

Boarino, Luca, and Giampiero Amato. "Nanostructures Based on Porous Silicon." In Encyclopedia of Nanotechnology, 2776–87. Dordrecht: Springer Netherlands, 2016. http://dx.doi.org/10.1007/978-94-017-9780-1_233.

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10

Yoda, Minami, Jean-Luc Garden, Olivier Bourgeois, Aeraj Haque, Aloke Kumar, Hans Deyhle, Simone Hieber, et al. "Nanostructures Based on Porous Silicon." In Encyclopedia of Nanotechnology, 1781–89. Dordrecht: Springer Netherlands, 2012. http://dx.doi.org/10.1007/978-90-481-9751-4_233.

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Тези доповідей конференцій з теми "Silicon Based Nanostructure"

1

Li, Meicheng, Rui Huang, Pengfei Fu, Ruike Li, Fan Bai, Dandan Song, and Yingfeng Li. "Optical Property of Silicon Based Nanostructure and Fabrication of Silicon Nanostructure Solar Cells." In Optical Nanostructures and Advanced Materials for Photovoltaics. Washington, D.C.: OSA, 2014. http://dx.doi.org/10.1364/pv.2014.pw3c.5.

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2

Asri, Muhammad Izzudin Ahmad, Mohammed Nazibul Hasan, Yusri Md Yunos, Marwan Nafea, and Mohamed Sultan Mohamed Ali. "Silicon Nanostructure based Surface Acoustic Wave Gas Sensor." In 2022 IEEE Sensors. IEEE, 2022. http://dx.doi.org/10.1109/sensors52175.2022.9967303.

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3

Sun, Xinjie, Xin He, Zixin Cai, Xu Liu, and Xiang Hao. "Circular Polarizer Based on Multi-stack Plasmonic Nanostructure for Optical Communication." In Integrated Photonics Research, Silicon and Nanophotonics. Washington, D.C.: OSA, 2021. http://dx.doi.org/10.1364/iprsn.2021.jtu1a.16.

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4

Sesen, Muhsincan, Berkay Arda Kosar, Ali Kosar, Wisam Khudhayer, Berk Ahmet Ahishalioglu, and Tansel Karabacak. "A Compact Nanostructure Enhanced Heat Sink With Flow in a Rectangular Channel." In ASME 2010 10th Biennial Conference on Engineering Systems Design and Analysis. ASMEDC, 2010. http://dx.doi.org/10.1115/esda2010-25336.

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This paper reports a compact nanostructure based heat sink. The system has an inlet and an outlet valve similar to a conventional heat sink. From the inlet valve, pressurized deionized-water is propelled into a rectangular channel (of dimensions 24mm×59mm×8mm). This rectangular channel houses a nanostructured plate, on which ∼600 nm long copper nanorod arrays with an average nanorod diameter of 150 nm are integrated to copper thin film coated on silicon wafer surface. Forced convective heat transfer characteristics of the nanostructured plate are investigated using the experimental setup and compared to the results from a flat plate of copper thin film deposited on silicon substrate. Nanorod arrays act as fins over the plate which enhances the heat transfer from the plate. Excess heat generating small devices are mimicked through a small heat generator placed below the nanostructured plate. Constant heat flux is provided through the heat generator. Thermocouples placed on the heater surface are utilized to gather the surface temperature data. Constant pressure drop across the heat sink and constant heat flux values are varied in order to obtain the correlation between heat removal rate and input power. Volumetric flow rate was measured as a function of the constant pressure drop. In this study, it was proved that nanostructured surfaces have the potential to be a useful in cooling of small and excessive heat generating devices such as MEMS (Micro Electro Mechanical Systems) and microprocessors.
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5

Peng, Longyao, Liguo Zhu, Hao Tang, Kun Meng, Sencheng Zhong, Zeren Li, and Rongzhu Zhang. "Study on silicon nanostructure based solar cell by ultrafast terahertz spectroscopy." In ISPDI 2013 - Fifth International Symposium on Photoelectronic Detection and Imaging, edited by Marco Rahm, Konstantin Vodopyanov, Wei Shi, and Cunlin Zhang. SPIE, 2013. http://dx.doi.org/10.1117/12.2033123.

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6

Liang, Jui-Wen, Wen-Yu Wang, and Cho-Liang Chung. "Preparation of superhydrophobic silicon-based net-like hollow nanostructure using electrospinning." In 2018 International Conference on Electronics Packaging and iMAPS All Asia Conference (ICEP-IAAC). IEEE, 2018. http://dx.doi.org/10.23919/icep.2018.8374362.

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7

Lee, Jongwon, Stephen M. Goodnick, and Christiana B. Honsberg. "Limiting efficiency of silicon based nanostructure solar cells for multiple exciton generation." In 2013 IEEE 39th Photovoltaic Specialists Conference (PVSC). IEEE, 2013. http://dx.doi.org/10.1109/pvsc.2013.6744320.

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8

Kraus, S., R. Shiloh, J. Illmer, T. Chlouba, P. Yousefi, N. Schönenberger, U. Niedermayer, A. Mittelbach, and P. Hommelhoff. "Electron phase-space control in photonic chip-based particle acceleration." In CLEO: QELS_Fundamental Science. Washington, D.C.: Optica Publishing Group, 2022. http://dx.doi.org/10.1364/cleo_qels.2022.fth5b.4.

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We demonstrate complex electron phase-space control in a 77.7 micrometer long silicon-based nanostructure. This low-loss electron transport scheme is a prerequisite to the future mega-electron-volt electron accelerator on a photonic chip.
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9

Lacroix, David, Karl Joulain, Gilles Parent, and Sebastien Fumeron. "Monte Carlo Simulation of Heat Pulse Propagation in Silicon Nanostructure." In ASME 2008 First International Conference on Micro/Nanoscale Heat Transfer. ASMEDC, 2008. http://dx.doi.org/10.1115/mnht2008-52101.

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Heat transport in nanostructured material is a critical issue in the design of electronic devices. According to the size and the temperature, thermal properties of the considered medium can change. In order to appraise these modifications new simulation techniques based on phonon transport equation solution have been developed. In this field, the Monte Carlo method dedicated to phonon motion and collision modeling has prove to be efficient. In the present paper we propose a modified form of this method that takes into account short pulse heating in order to assess specific heat c and thermal conductivity k. The parameter assessment has been done using Laplace analysis of the Monte Carlo calculated temperature profiles at short and long times through asymptotic solutions fitting. These numerical tools have demonstrated to be efficient as c and k values obtained for bulk silicon at low and room temperatures confirmed it.
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10

Lepeshov, S., A. Krasnok, O. Kotov, and A. Alu. "Strong Coupling in Core-Shell Nanostructure Based on Silicon Nanoparticle and TMDC Monolayer." In 2018 International Conference Laser Optics (ICLO). IEEE, 2018. http://dx.doi.org/10.1109/lo.2018.8435388.

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Звіти організацій з теми "Silicon Based Nanostructure"

1

Ohuchi, Fumio, and Rajandra Bordia. Precursor-Derived Nanostructured Silicon Carbide Based Materials for Magnetohydrodynamic Electrode Applications. Office of Scientific and Technical Information (OSTI), July 2019. http://dx.doi.org/10.2172/1542886.

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Ohuchi, Fumio, and Rajandra Bordia. Precursor-Derived Nanostructured Silicon Carbide Based Materials for Magnetohydrodynamic Electrode Applications. Office of Scientific and Technical Information (OSTI), December 2018. http://dx.doi.org/10.2172/1489149.

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