Добірка наукової літератури з теми "SiC thin film"
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Статті в журналах з теми "SiC thin film"
Nagai, T., and M. Itoh. "SiC thin-film thermistors." IEEE Transactions on Industry Applications 26, no. 6 (1990): 1139–43. http://dx.doi.org/10.1109/28.62400.
Повний текст джерелаNagai, Takeshi, Kazushi Yamamoto, and Ikuo Kobayashi. "SiC thin film thermistor." Thin Solid Films 125, no. 3-4 (March 1985): 355–59. http://dx.doi.org/10.1016/0040-6090(85)90244-5.
Повний текст джерелаJiao, Zong Lei, and Jian Zhu. "Study of SiC’s Mechanical Property Variance Caused by Film Thickness." Key Engineering Materials 645-646 (May 2015): 400–404. http://dx.doi.org/10.4028/www.scientific.net/kem.645-646.400.
Повний текст джерелаNutt, S. R., та David J. Smith. "High-resolution TEM of thin-film β-SiC interfaces". Proceedings, annual meeting, Electron Microscopy Society of America 44 (серпень 1986): 408–9. http://dx.doi.org/10.1017/s0424820100143638.
Повний текст джерелаMarsi, Noraini, Majlis Burhanuddin Yeop, Azrul Azlan Hamzah, and Faisal Mohd-Yasin. "Growth and Characterization of (100) and (111) 3C-SiC Thin Film for MEMS Capacitive Pressure Sensor for Extreme Environments." Advanced Materials Research 1024 (August 2014): 356–59. http://dx.doi.org/10.4028/www.scientific.net/amr.1024.356.
Повний текст джерелаHeimann, D., T. Wagner, J. Bill, F. Aldinger та F. F. Lange. "Epitaxial growth of β–SiC thin films on a 6H–SiC substrate using the chemical solution deposition method". Journal of Materials Research 12, № 11 (листопад 1997): 3099–101. http://dx.doi.org/10.1557/jmr.1997.0403.
Повний текст джерелаSankin, A. V., V. I. Altukhov, and Z. I. Dadasheva. "Thin SiC and Gan-Based Films and Structures: Production and Properties." Key Engineering Materials 909 (February 4, 2022): 156–61. http://dx.doi.org/10.4028/p-uvvw11.
Повний текст джерелаWang, Li, Sima Dimitrijev, Glenn Walker, Ji Sheng Han, Alan Iacopi, Philip Tanner, Leonie Hold, Yu Zhao, and Francesca Iacopi. "Color Chart for Thin SiC Films Grown on Si Substrates." Materials Science Forum 740-742 (January 2013): 279–82. http://dx.doi.org/10.4028/www.scientific.net/msf.740-742.279.
Повний текст джерелаČtvrtlík, Radim, Jan Tomastik, and Petr Schovánek. "High Temperature Nanoindentation Testing of Amorphous SiC and B4C Thin Films." Defect and Diffusion Forum 368 (July 2016): 115–18. http://dx.doi.org/10.4028/www.scientific.net/ddf.368.115.
Повний текст джерелаAlisha, P. Chander, V. K. Malik, and R. Chandra. "Structural and Electrical Transport Properties of Sputter-Deposited SiC Thin Films." Journal of Physics: Conference Series 2518, no. 1 (June 1, 2023): 012016. http://dx.doi.org/10.1088/1742-6596/2518/1/012016.
Повний текст джерелаДисертації з теми "SiC thin film"
Ma, Yunfei. "Micromagentic [sic] study of magnetoeleastic materials /." Thesis, Connect to this title online; UW restricted, 2007. http://hdl.handle.net/1773/7068.
Повний текст джерелаWang, Feng. "Surface/interface modification and characterization of C-face epitaxial graphene." Diss., Georgia Institute of Technology, 2015. http://hdl.handle.net/1853/53855.
Повний текст джерелаLi, Xuebin. "Epitaxial graphene films on SiC : growth, characterization, and devices /." Diss., Atlanta, Ga. : Georgia Institute of Technology, 2008. http://hdl.handle.net/1853/24670.
Повний текст джерелаCommittee Chair: de Heer, Walter; Committee Member: Chou, Mei-Yin; Committee Member: First, Phillip; Committee Member: Meindl, James; Committee Member: Orlando, Thomas
Saifaddin, Burhan Khalid. "Development of Deep Ultraviolet (UV-C) Thin-Film Light-Emitting Diodes Grown on SiC." Thesis, University of California, Santa Barbara, 2019. http://pqdtopen.proquest.com/#viewpdf?dispub=10975858.
Повний текст джерелаUV-C LEDs in the range of 265–280 nm are needed to develop new disinfection and biotechnology applications. The market share for UV-C LED, versus UV-C lamps (Hg discharge and Xe), increased from 8% in 2008 ($240M) to 25% in 2018 ($810M). However, while low-pressure mercury lamps are ~30% energy efficient, the best commercial UV-C LEDs in the 265–280 nm range are ~2% energy efficient; InGaN blue LEDs are 80% energy efficient. Research on AlGaN LEDs has made significant progress into AlGaN material quality (including threading dislocation density and n-AlGaN electrical conductivity) but has lagged regarding light extraction efficiency. Light extraction from UV LEDs is limited by p-GaN absorption because of the lack of p-contact to p-AlGaN with AlN fraction (AlN content > 50%). Furthermore, AlGaN emitters at the 265–280 nm range emit 40–50% of their emissions as transverse magnetic (TM) waves, which are harder to extract than transverse electric (TE) waves.
SiC is an absorbing substrate that has been largely overlooked in developing UV-C LEDs, even though it has a small lattice mismatch with AlN (~1%) and a similar Wurtzite crystal structure and is more chemically stable. We demonstrate the first lateral thin-film flip-chip (TFFC) ultraviolet (UV) light-emitting diodes grown on SiC. UV LEDs were made at 310 nm, 298 nm, 278 nm, and 265 nm.
In this dissertation, we discuss the design, epi development, and fabrication of TFFC AlGaN LEDs with reflective p-contacts. The AlGaN:Mg growth temperature and the Mg doping profile in AlGaN:Mg were found to significantly impact the electroluminescence (EL) efficiency of the AlGaN MQWs. KOH roughening enhanced the light-extraction efficiency (LEE) by 100% and by ~180–200% for UV LEDs with 10 nm p-GaN and 5 nm p-GaN, respectively, without affecting the devices’ IV characteristics. The thin-film architecture led to a high LEE of about ~28–30% without LED encapsulation when used with LEDs with 5 nm p-GaN. The best light extraction efficiency in the literature is ~24% (without LED encapsulation) for a 275 nm flip-chip LED grown on PSS sapphire substrate. KOH roughening of AlN is discussed and is compared to KOH roughening of N-Face GaN. To advance LEE further, we attempted to develop LEDs with transparent current n-AlGaN spreading layers as well as highly doped n+-AlGaN tunnel junctions on top of UV-C LEDs. Reflective and ohmic n-contacts with low resistivities were developed for the n-Al.58Ga.42N regrown by MBE. Furthermore, a highly reflective MgF2/Al omnidirectional mirror was developed, which can be used with n-contact microgrid to further enhance the LEE in UV-C LEDs with a transparent tunnel junction.
Karnick, David A. "Miniaturization of Folded Slot Antennas through Inductive Loading and Thin Film Packaging." Case Western Reserve University School of Graduate Studies / OhioLINK, 2011. http://rave.ohiolink.edu/etdc/view?acc_num=case1295549545.
Повний текст джерелаTengdelius, Lina. "Growth and Characterization of ZrB2 Thin Films." Licentiate thesis, Linköpings universitet, Tunnfilmsfysik, 2013. http://urn.kb.se/resolve?urn=urn:nbn:se:liu:diva-98308.
Повний текст джерелаThabethe, Thabsile Theodora. "The interfacial reaction and analysis of W thin film on 6H-SiC annealed in vacuum, hydrogen and argon." Thesis, University of Pretoria, 2017. http://hdl.handle.net/2263/65018.
Повний текст джерелаThesis (PhD)--University of Pretoria, 2017.
NRF Free-standing-Innovation Doctoral Scholarships
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Baran, Andre. "Chemical bath deposited zinc cadmium sulfide and sputter deposted [sic] zinc oxide for thin film solar cell device fabrication." [Gainesville, Fla.] : University of Florida, 2009. http://purl.fcla.edu/fcla/etd/UFE0022644.
Повний текст джерелаShelberg, Daniel Thomas. "PHYSICAL AND CHEMICAL PROPERTIES OF AMBIENT TEMPERATURE SPUTTERED SILICON CARBIDE FILMS." Cleveland, Ohio : Case Western Reserve University, 2010. http://rave.ohiolink.edu/etdc/view?acc_num=case1269963941.
Повний текст джерелаDepartment of Chemical Engineering Title from PDF (viewed on 2010-05-25) Includes abstract Includes bibliographical references and appendices Available online via the OhioLINK ETD Center
Da, Conceicao Lorenzzi Jean Carlos. "Growth and doping of heteroepitaxial 3C-SiC layers on α-SiC substrates using Vapour-Liquid-Solid mechanism". Thesis, Lyon 1, 2010. http://www.theses.fr/2010LYO10179.
Повний текст джерелаRecently, the use of an original growth approach based on vapour-liquid-solid (VLS) mechanism with Ge-Si melts has led to significant improvement of the crystalline quality of the 3C-SiC thin layers heteroepitaxially grown on α-SiC(0001) substrate. This work tries to deepen the knowledge of such specific growth method, to improve the process and to determine the properties of the grown material. The first part was dedicated to the understanding and mastering of the various mechanisms involved in 3C-SiC growth by VLS mechanism. This led to the determination of the parameters limiting sample size and the demonstration of the benefits of using 50 at% Ge instead of 75 at% Ge melts. A study of lateral enlargement on patterned substrates gave some interesting hints which can be integrated in the model of twin defect elimination. The incorporation of non intentional and intentional n- and p-type dopants during VLS growth was studied. For n-type doping, a clear link between N impurity and 3C polytype stability was demonstrated. Besides, high purity layers with residual n-type doping below 1x1017 cm-3 were achieved. For p-type doping, the best element was shown to be Al and not Ga, even if it has to be alloyed with Ge-Si melts to avoid homoepitaxial growth. Finally, these layers were characterised by several optical and electrical means like Raman spectroscopy, low temperature photoluminescence, deep leveltransient spectroscopy and MOS capacitors measurements. Very low concentrationsof fixed oxide charges estimated about 7×109 cm-2 and interface states densities Dit equal to 1.2×1010 cm-2eV-1at 0.63 eV below the conduction band have been achieved. These record values are a very good base toward 3C-SiC MOSFET
Книги з теми "SiC thin film"
United States. National Aeronautics and Space Administration., ed. System for the growth of bulk SiC crystals by modified CVD techniques: Final report. [Washington, DC: National Aeronautics and Space Administration, 1994.
Знайти повний текст джерелаSymposium C on Properties and Applications of SiC, Natural and Synthetic Diamond and Related Materials (1990 Strasbourg, France). SiC, natural and synthetic diamond and related materials: Proceedings of Symposium C on Properties and Applications of SiC, Natural and Synthetic Diamond and Related Materials of the 1990 E-MRS Fall conference, Strasbourg, France, November 27-30, 1990. Amsterdam: North-Holland, 1992.
Знайти повний текст джерелаReid, Jonathan Paul. Corrosion properties if [sic] neodymium iron boron thin films. Birmingham: University of Birmingham, 2000.
Знайти повний текст джерелаUnited States. National Aeronautics and Space Administration., ed. Ultra-low-cost room temperature SiC thin films: Final report, NASA research grant no. NAG3-1828 for the period April 8, 1996 to September 30, 1996. [Cleveland, Ohio?]: The Center, 1997.
Знайти повний текст джерелаH, Carter Calvin, and Materials Research Society. Meeting Symposium D., eds. Diamond, SiC and nitride wide bandgap semiconductors: Symposium held April 4-8, 1994, San Francisco, California, U.S. Pittsburgh, PA: Materials Research Society, 1994.
Знайти повний текст джерелаDeMichael, Tom. Modern sci-fi films FAQ: All that's left to know about time travel, alien, robot, and out-of-this-world movies since 1970. Milwaukee, WI: Applause Theatre & Cinema Books, 2014.
Знайти повний текст джерелаUnited States. National Aeronautics and Space Administration., ed. ULTRA-LOW-COST ROOM TEMPERATURE SIC THIN FILMS FINAL REPORT... NASA/CR-97-207101... APR. 7, 1998. [S.l: s.n., 1999.
Знайти повний текст джерелаNational Aeronautics and Space Administration (NASA) Staff. Durability Evaluation of a Thin Film Sensor System with Enhanced Lead Wire Attachments on Sic/Sic Ceramic Matrix Composites. Independently Published, 2018.
Знайти повний текст джерелаMilosevich, Zoran. Perfomance [sic] tests of a three-element thin film detector with an analysis of large scattering angle charge state characteristics of germanium and selenium ions. 1991.
Знайти повний текст джерелаGippius, A. A., R. Helbig, and J. P. F. Sellschop. SiC, Natural and Synthetic Diamond and Related Materials. Elsevier Science & Technology Books, 1992.
Знайти повний текст джерелаЧастини книг з теми "SiC thin film"
Onuma, Y., S. Miyashita, Y. Nishibe, K. Kamimura, and K. Tezuka. "Thin Film Transistors Using Polycrystalline SiC." In Springer Proceedings in Physics, 212–16. Berlin, Heidelberg: Springer Berlin Heidelberg, 1989. http://dx.doi.org/10.1007/978-3-642-75048-9_42.
Повний текст джерелаBishop, S. G., J. A. Freitas, T. A. Kennedy, W. E. Carlos, W. J. Moore, P. E. R. Nordquist, and M. L. Gipe. "Donor Identification in Thin Film Cubic SiC." In Amorphous and Crystalline Silicon Carbide and Related Materials, 90–98. Berlin, Heidelberg: Springer Berlin Heidelberg, 1989. http://dx.doi.org/10.1007/978-3-642-93406-3_12.
Повний текст джерелаZhuang, Hao, and Xin Jiang. "Allylamine Functionalization of 3C-SiC Thin Film." In PRICM, 1853–61. Hoboken, NJ, USA: John Wiley & Sons, Inc., 2013. http://dx.doi.org/10.1002/9781118792148.ch231.
Повний текст джерелаZhuang, Hao, and Xin Jiang. "Allylamine Functionalization of 3C-SiC Thin Film." In Proceedings of the 8th Pacific Rim International Congress on Advanced Materials and Processing, 1853–61. Cham: Springer International Publishing, 2013. http://dx.doi.org/10.1007/978-3-319-48764-9_231.
Повний текст джерелаDavis, Robert F., S. Tanaka, S. Kern, M. Bremser, K. S. Ailey, W. Perry, and T. Zheleva. "Microstructure and Properties of SiC/SiC and SiC/III-V Nitride Thin Film Heterostructural Assemblies." In Ceramic Microstructures, 629–36. Boston, MA: Springer US, 1998. http://dx.doi.org/10.1007/978-1-4615-5393-9_63.
Повний текст джерелаNakasa, Keijiro, Masahiko Kato, and Jin Hua Zheng. "Wear and Delamination Behavior of SiC Thin Film under Repeated Sliding Load." In The Mechanical Behavior of Materials X, 669–72. Stafa: Trans Tech Publications Ltd., 2007. http://dx.doi.org/10.4028/0-87849-440-5.669.
Повний текст джерелаSano, Hideaki, Hajime Karasuyama, Guo Bin Zheng, and Yasuo Uchiyama. "Kinetics of the SiC Formation from Carbon Thin Film and SiO Gas." In Materials Science Forum, 930–33. Stafa: Trans Tech Publications Ltd., 2006. http://dx.doi.org/10.4028/0-87849-995-4.930.
Повний текст джерелаColder, H., M. Morales, Richard Rizk, and I. Vickridge. "Characterization of SiC Thin Film Obtained by Magnetron Reactive Sputtering: IBA, IR and Raman Studies." In Materials Science Forum, 287–90. Stafa: Trans Tech Publications Ltd., 2005. http://dx.doi.org/10.4028/0-87849-963-6.287.
Повний текст джерелаHixson, Earl C., C. Suryanarayana, Graham G. W. Mustoe, and John J. Moore. "Modeling Thermal Stresses and Measuring Thin Film CTE in MoSi2and MoSi2+SiC Composite Coatings on Molybdenum." In Elevated Temperature Coatings, 109–18. Hoboken, NJ, USA: John Wiley & Sons, Inc., 2013. http://dx.doi.org/10.1002/9781118787694.ch8.
Повний текст джерелаBhimasingu, Venkataramesh, Nilesh J. Vasa, and I. A. Palani. "Influence of Substrate Temperature, Pressure and Grit Size on Synthesis of SiC Thin Film by Pulsed Laser Deposition Technique." In Communications in Computer and Information Science, 379–88. Berlin, Heidelberg: Springer Berlin Heidelberg, 2012. http://dx.doi.org/10.1007/978-3-642-35197-6_42.
Повний текст джерелаТези доповідей конференцій з теми "SiC thin film"
Chen, G., Z. Y. Li, S. Bai, and P. Han. "Properties of homoepitaxial 4H-SiC and characteristics of Ti/4H-SiC Schottky barrier diodes." In Sixth International Conference on Thin Film Physics and Applications. SPIE, 2008. http://dx.doi.org/10.1117/12.792156.
Повний текст джерелаShen, Zhenfeng, and Jinsong Gao. "Surface modification of SiC mirror by IARE method." In Seventh International Conference on Thin Film Physics and Applications, edited by Junhao Chu and Zhanshan Wang. SPIE, 2010. http://dx.doi.org/10.1117/12.888297.
Повний текст джерелаJia, Renxu, Yimen Zhang, Yuming Zhang, and Yuehu Wang. "Nitrogen incorporation characteristics of 4H-SiC epitaxial layer." In Sixth International Conference on Thin Film Physics and Applications. SPIE, 2008. http://dx.doi.org/10.1117/12.792363.
Повний текст джерелаJia, Wei, Yuming Zhang, Yimen Zhang, Renxu Jia, and Hui Guo. "Simulation of SiC deposition in a hot wall CVD reactor." In Sixth International Conference on Thin Film Physics and Applications. SPIE, 2008. http://dx.doi.org/10.1117/12.792270.
Повний текст джерелаXiao, Xingcheng, Lixin Song, Weihui Jiang, and Xingfang Hu. "Sputtering deposition and optical properties of SiC x N y films." In 4th International Conference on Thin Film Physics and Applications, edited by Junhao Chu, Pulin Liu, and Yong Chang. SPIE, 2000. http://dx.doi.org/10.1117/12.408319.
Повний текст джерелаKRUANGAM, Dusit, Masahiro DEGUCHI, Toshihito ENDO, Wei Guang-Pu, Hiroaki Okamoto, and Yoshihiro HAMAKAWA. "Visible Light a-SiC Multilayered Thin Film LED." In 1986 International Conference on Solid State Devices and Materials. The Japan Society of Applied Physics, 1986. http://dx.doi.org/10.7567/ssdm.1986.d-10-4.
Повний текст джерелаIkoma, Yoshifumi, Hafizal Yahaya, Hirofumi Sakita, Yuta Nishino, and Teruaki Motooka. "Position-controlled formation of Si nanopores by chemical vapor deposition of SiC/SOI(100)." In Seventh International Conference on Thin Film Physics and Applications, edited by Junhao Chu and Zhanshan Wang. SPIE, 2010. http://dx.doi.org/10.1117/12.888531.
Повний текст джерелаYahaya, Hafizal, Yoshifumi Ikoma, Keiji Kuriyama, and Teruaki Motooka. "Fabrication of nanopores utilizing SiC/Si(001) heteroepitaxial growth on SOI substrates: nanopore density control." In Seventh International Conference on Thin Film Physics and Applications, edited by Junhao Chu and Zhanshan Wang. SPIE, 2010. http://dx.doi.org/10.1117/12.888388.
Повний текст джерелаIkoma, Yoshifumi, Kenta Ono, Mutsunori Uenuma, Tomohiko Ogata, and Teruaki Motooka. "New approach to formation of nanopore on SOI: SiC/Si heteroepitaxial growth by supersonic jet CVD." In Sixth International Conference on Thin Film Physics and Applications. SPIE, 2008. http://dx.doi.org/10.1117/12.792771.
Повний текст джерелаGuo, Wensheng, Dan Zhu, and Zhihong Liu. "Spectroellipsometric study of buried SiC layers formed by carbon implantation with a metal vapor vacuum arc ion source." In 4th International Conference on Thin Film Physics and Applications, edited by Junhao Chu, Pulin Liu, and Yong Chang. SPIE, 2000. http://dx.doi.org/10.1117/12.408323.
Повний текст джерелаЗвіти організацій з теми "SiC thin film"
Davis, R. F., H. H. Lamb, I. S. Tsong, E. Bauer, and E. Chen. Selected Energy Epitaxial Deposition and Low Energy Electron Microscopy of AlN, GaN, and SiC Thin Films. Fort Belvoir, VA: Defense Technical Information Center, December 1997. http://dx.doi.org/10.21236/ada338206.
Повний текст джерелаDavis, R. F., H. H. Lamb, and S. T. Tsong. Selected Energy Epitaxial Deposition and Low Energy Electron Microscopy of AIN, GaN and SiC Thin Films. Fort Belvoir, VA: Defense Technical Information Center, June 1998. http://dx.doi.org/10.21236/ada353949.
Повний текст джерелаChristman. L51577 Prediction of SCC Susceptibility Based on Mechanical Properties of Line Pipe Steels. Chantilly, Virginia: Pipeline Research Council International, Inc. (PRCI), August 1988. http://dx.doi.org/10.55274/r0010278.
Повний текст джерелаShannon. L51584 Effect of Water Chemistry on Internal Corrosion Rates in Offshore Pipelines.pdf. Chantilly, Virginia: Pipeline Research Council International, Inc. (PRCI), March 1988. http://dx.doi.org/10.55274/r0010643.
Повний текст джерелаRadu, Daniela Rodica, Mimi Liu, Po-yu Hwang, Dominik Berg, and Kevin Dobson. High-efficiency Thin-film Fe2SiS4 and Fe2GeS4-based Solar Cells Prepared from Low-Cost Solution Precursors. Final Report. Office of Scientific and Technical Information (OSTI), December 2017. http://dx.doi.org/10.2172/1415038.
Повний текст джерелаBaete, Christophe. PR-405-173610-R01 Develop New Criteria for DC Stray Current Interference. Chantilly, Virginia: Pipeline Research Council International, Inc. (PRCI), June 2019. http://dx.doi.org/10.55274/r0011602.
Повний текст джерелаBlanco, Roberto, Elena Fernández, Miguel García-Posada, and Sergio Mayordomo. An estimation of the default probabilities of Spanish non-financial corporations and their application to evaluate public policies. Madrid: Banco de España, September 2023. http://dx.doi.org/10.53479/33512.
Повний текст джерелаJia, Dan, and Yong-Yi Wang. PR-350-144501-R04 Characterization of Mechanical Properties of Vintage Girth Welds. Chantilly, Virginia: Pipeline Research Council International, Inc. (PRCI), December 2019. http://dx.doi.org/10.55274/r0011635.
Повний текст джерелаFlórez, Luz Adriana, Didier Hermida, and Leonardo Fabio Morales. The Heterogeneous Effect of Minimum Wage on Labor Market Flows in Colombia. Banco de la República Colombia, October 2022. http://dx.doi.org/10.32468/be.1213.
Повний текст джерелаJohan, Johan, Martina Rotolo, Carl-Johan Sommar, Yiran Li, Catalina Turcu, Bingqin Li, Young-hwan Byun, Jiwei Qian, Marc Flores Soler, and Nick Trebbien. Technological and social adaptation to COVID-19: Food for Vulnerable Urban Groups in Six Global Cities. Linköping University Electronic Press, March 2023. http://dx.doi.org/10.3384/9789180750578.
Повний текст джерела