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Статті в журналах з теми "SiC SBD"
Nakanishi, Yosuke, Takaaki Tominaga, Hiroaki Okabe, Yoshiyuki Suehiro, Kazuyuki Sugahara, Takeharu Kuroiwa, Yoshihiko Toyoda, et al. "Properties of a SiC Schottky Barrier Diode Fabricated with a Thin Substrate." Materials Science Forum 778-780 (February 2014): 820–23. http://dx.doi.org/10.4028/www.scientific.net/msf.778-780.820.
Повний текст джерелаShilpa, A., S. Singh, and N. V. L. Narasimha Murty. "Spectroscopic performance of Ni/4H-SiC and Ti/4H-SiC Schottky barrier diode alpha particle detectors." Journal of Instrumentation 17, no. 11 (November 1, 2022): P11014. http://dx.doi.org/10.1088/1748-0221/17/11/p11014.
Повний текст джерелаTominaga, Takaaki, Shiro Hino, Yohei Mitsui, Junichi Nakashima, Koutarou Kawahara, Shingo Tomohisa, and Naruhisa Miura. "Investigation on the Effect of Total Loss Reduction of HV Power Module by Using SiC-MOSFET Embedding SBD." Materials Science Forum 1004 (July 2020): 801–7. http://dx.doi.org/10.4028/www.scientific.net/msf.1004.801.
Повний текст джерелаKinoshita, Akimasa, Takasumi Ohyanagi, Tsutomu Yatsuo, Kenji Fukuda, Hajime Okumura, and Kazuo Arai. "Fabrication of 1.2kV, 100A, 4H-SiC(0001) and (000-1) Junction Barrier Schottky Diodes with Almost Same Schottky Barrier Height." Materials Science Forum 645-648 (April 2010): 893–96. http://dx.doi.org/10.4028/www.scientific.net/msf.645-648.893.
Повний текст джерелаKong, Moufu, Zewei Hu, Ronghe Yan, Bo Yi, Bingke Zhang, and Hongqiang Yang. "A novel SiC high-k superjunction power MOSFET integrated Schottky barrier diode with improved forward and reverse performance." Journal of Semiconductors 44, no. 5 (May 1, 2023): 052801. http://dx.doi.org/10.1088/1674-4926/44/5/052801.
Повний текст джерелаTezuka, Kazuo, Tatsurou Tsuyuki, Saburou Shimizu, Shinichi Nakamata, Takashi Tsuji, Noriyuki Iwamuro, Shinsuke Harada, Kenji Fukuda, and Hiroshi Kimura. "High Temperature Ion Implantation and Activation Annealing Technologies for Mass Production of SiC Power Devices." Materials Science Forum 717-720 (May 2012): 821–24. http://dx.doi.org/10.4028/www.scientific.net/msf.717-720.821.
Повний текст джерелаKinoshita, Akimasa, Takashi Nishi, Tsutomu Yatsuo, and Kenji Fukuda. "Improvement of SBD Electronic Characteristics Using Sacrificial Oxidation Removing the Degraded Layer from SiC Surface after High Temperature Annealing." Materials Science Forum 556-557 (September 2007): 877–80. http://dx.doi.org/10.4028/www.scientific.net/msf.556-557.877.
Повний текст джерелаHatakeyama, Tetsuo, Johji Nishio, and Takashi Shinohe. "Process and Device Simulation of a SiC Floating Junction Schottky Barrier Diode (Super-SBD)." Materials Science Forum 483-485 (May 2005): 921–24. http://dx.doi.org/10.4028/www.scientific.net/msf.483-485.921.
Повний текст джерелаYuan, Hao, Xiao Yan Tang, Yi Men Zhang, Yu Ming Zhang, Hong Liang Lv, Yue Hu Wang, Yu Fei Zhou, and Qing Wen Song. "The Fabrication of 4H-SiC Floating Junction SBDs (FJ_SBDs)." Materials Science Forum 778-780 (February 2014): 812–15. http://dx.doi.org/10.4028/www.scientific.net/msf.778-780.812.
Повний текст джерелаZiko, Mehadi Hasan, Ants Koel, Toomas Rang, and Muhammad Haroon Rashid. "Investigation of Barrier Inhomogeneities and Electronic Transport on Al-Foil/p-Type-4H-SiC Schottky Barrier Diodes Using Diffusion Welding." Crystals 10, no. 8 (July 23, 2020): 636. http://dx.doi.org/10.3390/cryst10080636.
Повний текст джерелаДисертації з теми "SiC SBD"
Kaufmann, Ivan Rodrigo. "Diodos schottky de SiC para uso como detectores de energia de partículas carregadas." reponame:Biblioteca Digital de Teses e Dissertações da UFRGS, 2017. http://hdl.handle.net/10183/171046.
Повний текст джерелаIn the present work, silicon carbide (SiC) Schottky diodes with potential use in energy particle detectors were investigated. Metal-Insulator-Semiconductor (MIS) SiC Schottky diodes were fabricated. The MIS structures are considered because SiC always forms a thin native silicon oxycarbide (SiCxOy) layer in its surface that is difficult to remove by chemical means. A modified Thermionic Emission theory (TE) was developed to take into account the native oxide and/or thin dielectric layers present between metal and semiconductor in Schottky diodes. Aluminum/dielectric/silicon structures were fabricated for the dielectric characterization. SiO2, TiO2, HfO2 and Al2O3 dielectrics were deposited between Ni and SiC, with thicknesses varying from 1 to 8 nm. The deposited dielectrics layers thicknesses were confirmed by Ellipsometry spectra and X ray reflectometry before deposition of Ni Schottky contacts by sputtering. After Ni deposition and annealing, the Schottky diodes were electrically characterized by Current-Voltage (I-V) and Capacitance-Voltage measurements, varying the temperature. A thin dielectric layer present between metal and semiconductor artificially augments the Schottky Barrier Height (SBH) and lowers the reverse current when the diodes are reverse biased. A 0.18 – 0.20 nm of SiCxOy layer was inferred for the diodes using the modified TE. The real SBH was extracted from the I-V measurements and presented values of 1.39, 1.32 and 1.26 V for the diodes with 1 nm of TiO2, Al2O3 and HfO2, respectively. For these, an ideality factor close to 1 was calculated. Diodes with thicker (>4 nm) dielectrics layers shows Metal-Oxide-Semiconductor capacitors behavior. Ni/Al2O3/4H-SiC/Ni and Ni/HfO2/4H-SiC/Ni structures with 1 nm of dielectric layer thickness were used in Rutherford Backscattering Spectrometry experiments. Both detectors presented reverse current lower than 70 nA.cm-2 and energy resolution of 76 keV, when applied 40 V reverse bias.
Im, Hsung J. "Metal Contacts to Silicon Carbide and Gallium Nitride Studied with Ballistic Electron Emission Microscopy." The Ohio State University, 2001. http://rave.ohiolink.edu/etdc/view?acc_num=osu1000844302.
Повний текст джерелаMartínez, Diego Jessie. "Sistema baseado em conhecimento (SBC) de apoio à capacitação organizacional." reponame:Repositório Institucional da UFSC, 2017. https://repositorio.ufsc.br/xmlui/handle/123456789/179922.
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Evitar a perda da memória organizacional e a dependência de uma ou poucas pessoas é um desafio da Era do Conhecimento. Conhecimentos chave são aqueles vitais para o cumprimento da missão, permitem alcançar os objetivos estratégicos e estão alinhados com a construção da visão organizacional. Conhecimentos chave, independentes do nível (estratégico, tático ou operacional), criam vantagens competitivas de longo, médio e curto prazo. O objetivo desta pesquisa é propor um Sistema Baseado em Conhecimento (SBC) de apoio à capacitação organizacional. A aplicação foi realizada em uma instituição bancária. É utilizado um método que combina a metodologia de engenharia de ontologias e método incremental de desenvolvimento. Engenharia de ontologias é uma metodologia, da Engenharia do Conhecimento (EC), para o desenvolvimento ordenado e por etapas de SBC. O método incremental permite chegar de forma ágil no primeiro protótipo, para posteriormente, ir incorporando novas funcionalidades em ciclos curtos sucessivos. Como resultado deste trabalho, tem-se a proposta de um SBC, suportado por ontologia, para apoio ao aprendizado e ferramenta de consulta no domínio do curso Autorregulação Bancária - Conhecimentos Gerais. Adicionalmente, foram propostas métricas de avaliação do desempenho da Gestão do Conhecimento (GC) para este e outros cursos de capacitação semelhantes na organização. A aplicação do método permitiu concluir que a metodologia híbrida, aqui proposta, auxilia efetivamente o desenvolvimento de SBC de apoio à capacitação organizacional, pudendo ser replicável em outros cursos, e tendo como critérios fundamentais a agregação de valor, a escalabilidade e a interoperabilidade.
Abstract: A challenge of the Knowledge Age is avoiding loss of organizational memory and reducing dependence on few people's knowledge. Key knowledge is vital to mission fulfillment, drives the achievement of strategic objectives and is aligned with pursuing the organization's vision. Key knowledge, independent of the level (strategic, tactical or operational), creates long, medium or short term competitive advantages. The objective of this research is to propose a Knowledge Based System (KBS) to support organizational training. The research was applied at a financial institution. A method that combines ontology engineering methodology and incremental development method was used. Engineering of ontologies is a methodology, of Knowledge Engineering (KE), for the orderly and stepwise development of KBS. The incremental method allows arriving in an agile way in the first prototype, and then, incorporate new functionalities in successive short cycles. As a result of this work, there is a proposal of a KBS, based on ontology, to support learning and serving as query tool in the field of the course Banking Self-Regulation - General Knowledge. Additionally, metrics were proposed to measure the performance of Knowledge Management (KM) for this, and other similar training courses in the organization. Applying the method shows that the hybrid methodology proposed here effectively assists the development of SBC in support of organizational training, being able to be replicable in other courses, and having as fundamental criteria adding value, scalability and interoperability.
Sahlberg, Bo. "Indoor Environment in Dwellings and Sick Building Syndrome (SBS) : Longitudinal Studies." Doctoral thesis, Uppsala universitet, Arbets- och miljömedicin, 2012. http://urn.kb.se/resolve?urn=urn:nbn:se:uu:diva-172769.
Повний текст джерелаHaouche, Corinne. "Utilisation des concepts de l'acquisition des connaissances pour valider un SBC." Paris 9, 1995. https://portail.bu.dauphine.fr/fileviewer/index.php?doc=1995PA090016.
Повний текст джерелаThis work deals with the validation of Knowledge-Based Systems. Knowledge acquisition, and especially the conceptual modelling of knowledge provides conceptual models which can be considered as high-level specifications of the KBS. This work is a proposal for a testing method, close to white box testing, but which uses a KADS conceptual model built in reverse-engineering, as a set of specifications. When the system is run, a high-level trace called a current inference path (CIP) is built. Then it is compared to the inference structure. If this CIP does not match the inference structure, either the KBS or the conceptual model is updated. Thus, the specifications and the KBS can evolve concurrently to achieve the actual task assigned to the system. This method has been used to build a conceptual model. The results of this method are twofold. On the one hand some runtime errors were detected; on the other hand, it has lead us to conclude that a KADS conceptual model must be expressed using the domain knowledge in order to be exploitable in a validation process
Sidiropoulou, Christina. "VoIP Operators : From a Carrier Point of View." Thesis, KTH, Kommunikationssystem, CoS, 2011. http://urn.kb.se/resolve?urn=urn:nbn:se:kth:diva-91048.
Повний текст джерелаRöst över Internet Protokoll (VoIP) är en tjänst som nyligen har fått ökad uppmärksamhet inom telekommunikations (telecom) branschen eftersom att både Internetleverantörer (ISPs) och telecom operatörer har insett vilka fördelar som tjänsten erbjuder. Även om traditionell telefoni är väl etablerad i både telecombranschen och vår vardag, så kan VoIP konkurrera genom att erbjuda kostnadsbesparingar, förenkling, och introducera nya sätt att kommunicera på. IP leverantörer har redan påbörjat lansering av effektiva VoIP tjänster till sina kunder och telecom carriers bygger om sin nätverksstruktur för att möta kraven av VoIP traffik. Det finns många faktorer att bejaka för både IP leverantörer och telecom carriers för att effektivt bygga och driva VoIP nätverk. Noggrann produktplanering och väletablerad övervakning samt felsökningsprocedurer är en vital del i en framgångsrik VoIP tjänst. Denna avhandling fokuserar på VoIP implementering hos en telecom carrier och hur en telecom carrier effektivt kan underhålla och felsöka VoIP infrastruktur för att möta de servicenivåavtal de har skrivit med sina kunder (IP leverantörer), samt analysera det förebyggande åtgärder som kan tas för att minimera de resurser som behövs till kundtjänst. Denna avhandling presenteras effektiva tillvägagångssätt för planering och övervakning samt erbjuder effektiva,teknisk och organisationella metoder för felsökning av en telecom carriers VoIP produkter.
Schellenberg, Ingra. "Depression as disease, exploring the slippery slope between feeling sad and being sick." Thesis, National Library of Canada = Bibliothèque nationale du Canada, 2000. http://www.collectionscanada.ca/obj/s4/f2/dsk2/ftp01/MQ52947.pdf.
Повний текст джерелаPires, João Batista. "Governança, políticas públicas de cultura e as realidades locais: o caso VAI-SBC." Universidade de São Paulo, 2017. http://www.teses.usp.br/teses/disponiveis/100/100135/tde-20072017-091753/.
Повний текст джерелаIt is about the process of dissemination or diffusion of culture public policies, from the analysis of the Cultural Initiatives Valuation Program, VAI-SBC, development program to cultural production of the São Bernardo do Campos city hall, in relation to the homonym program and its conceptual basis, the VAI Program, developed on the city of São Paulo. Although both join the same political-ideological field, when being adapted to the location of Grande ABC, internal and external variables to the program, such as the accumulated experience by the policy makers, the embarrassments imposed by the political-management situation of the city hall and the development characteristics of the local cultural field, influenced the way how the choice of the formulation model occurred, acting decisively on the construction of its object and its guidelines. The study was based on research on documents, laws, commercial and official press, programs, interviews, testimonies, projects and actions, considering politcal, cultural, artistic and social aspects in the accomplishment of the public policy of culture
Zvolánek, Jiří. "Návrh RNAV SID a STAR tratí pro letiště Brno Tuřany." Master's thesis, Vysoké učení technické v Brně. Fakulta strojního inženýrství, 2010. http://www.nusl.cz/ntk/nusl-229209.
Повний текст джерелаKhoukhi, Faddoul. "Approche logico-symbolique dans le traitement des connaissances incertaines et imprecises dans les sbc." Reims, 1996. http://www.theses.fr/1996REIMS014.
Повний текст джерелаКниги з теми "SiC SBD"
Doll, Thomas E. SBC Helldiver in action. Carrollton, TX: Squadron/Signal Publications, 1995.
Знайти повний текст джерелаCopyright Paperback Collection (Library of Congress), ed. Centauri dawn. New York: Pocket Books, 2000.
Знайти повний текст джерелаPatrick, Reusse, ed. Sid! St. Paul: MBI Pub. Company LLC, 2007.
Знайти повний текст джерелаStandard building contract: Guide : SBC/G. London: Sweet and Maxwell, 2005.
Знайти повний текст джерелаStandard building contract: With quantities : SBC/Q. London: Sweet & Maxwell, 2005.
Знайти повний текст джерелаCorporation, Swiss Bank, ed. SBC European Art Competition 1995: The finalists. London: SBC Warburg, 1995.
Знайти повний текст джерелаMcCubbin, Chris. Sid Meier's Alpha centauri. [Rocklin, Calif.]: Prima Games, 1999.
Знайти повний текст джерелаFerrell, Keith. The official guide to Sid Meier's Civilization. Greensboro, N.C: Compute Books, 1992.
Знайти повний текст джерелаSmith, Shelton L. SBC conservative "take-over" not a "make-over": 18 years after the "take-over," conservative SBC leadership faltering, failing. Murfreesboro, TN: Sword of the Lord Publishers, 1997.
Знайти повний текст джерелаCox, Alex. Sid and Nancy: Love kills. Boston: Faber and Faber, 1986.
Знайти повний текст джерелаЧастини книг з теми "SiC SBD"
Nishikawa, Koichi, Yuusuke Maeyama, Yusuke Fukuda, Masaaki Shimizu, Masashi Sato, and Hiroaki Iwakuro. "Reverse Biased Electrochemical Etching of SiC-SBD." In Materials Science Forum, 419–22. Stafa: Trans Tech Publications Ltd., 2007. http://dx.doi.org/10.4028/0-87849-442-1.419.
Повний текст джерелаImaizumi, Masayuki, Yoichiro Tarui, Shin-Ichi Kinouchi, Hiroshi Nakatake, Yukiyasu Nakao, Tomokatsu Watanabe, Keiko Fujihira, Naruhisa Miura, Tetsuya Takami, and Tatsuo Ozeki. "Switching Characteristics of SiC-MOSFET and SBD Power Modules." In Silicon Carbide and Related Materials 2005, 1289–92. Stafa: Trans Tech Publications Ltd., 2006. http://dx.doi.org/10.4028/0-87849-425-1.1289.
Повний текст джерелаHatakeyama, Tetsuo, Chiharu Ota, Johji Nishio, and Takashi Shinohe. "Optimization of a SiC Super-SBD Based on Scaling Properties of Power Devices." In Silicon Carbide and Related Materials 2005, 1179–82. Stafa: Trans Tech Publications Ltd., 2006. http://dx.doi.org/10.4028/0-87849-425-1.1179.
Повний текст джерелаKim, S. J., S. Kim, Sang Cheol Kim, In Ho Kang, K. H. Lee, and T. Matsuoka. "FLR Geometry Dependence of Breakdown Voltage Characteristics for JBS-Assisted FLR SiC-SBD." In Materials Science Forum, 869–72. Stafa: Trans Tech Publications Ltd., 2007. http://dx.doi.org/10.4028/0-87849-442-1.869.
Повний текст джерелаHatakeyama, Tetsuo, Johji Nishio, and Takashi Shinohe. "Process and Device Simulation of a SiC Floating Junction Schottky Barrier Diode (Super-SBD)." In Materials Science Forum, 921–24. Stafa: Trans Tech Publications Ltd., 2005. http://dx.doi.org/10.4028/0-87849-963-6.921.
Повний текст джерелаKim, S. J., Y. S. Choi, S. J. Yu, Sang Cheol Kim, Wook Bahng, and K. H. Lee. "Breakdown Voltage Characteristics of FLR-Assisted SiC-SBD Formed by Aluminum Metal Junction Edge Termination." In Materials Science Forum, 861–64. Stafa: Trans Tech Publications Ltd., 2007. http://dx.doi.org/10.4028/0-87849-442-1.861.
Повний текст джерелаKinoshita, Akimasa, Takashi Nishi, Tsutomu Yatsuo, and Kenji Fukuda. "Improvement of SBD Electronic Characteristics Using Sacrificial Oxidation Removing the Degraded Layer from SiC Surface after High Temperature Annealing." In Materials Science Forum, 877–80. Stafa: Trans Tech Publications Ltd., 2007. http://dx.doi.org/10.4028/0-87849-442-1.877.
Повний текст джерелаAltieri, Riccardo. "Rosi Wolfstein - Ein Leben im Schatten der Kriege des 20. Jahrhunderts." In Historische Geschlechterforschung, 321–40. Bielefeld, Germany: transcript Verlag, 2021. http://dx.doi.org/10.14361/9783839457641-018.
Повний текст джерелаSchaarschmidt, Thomas. "Gedenkstätten heute im Spannungsfeld von Erwartungsdruck, Opferkonkurrenzen und falschen Maßstäben." In Public History - Angewandte Geschichte, 51–58. Bielefeld, Germany: transcript Verlag, 2023. http://dx.doi.org/10.14361/9783839464250-006.
Повний текст джерелаKant, Bernhard. "Elektrohydraulische Bremse SBC." In Bremsen und Bremsregelsysteme, 150–53. Wiesbaden: Vieweg+Teubner Verlag, 2010. http://dx.doi.org/10.1007/978-3-8348-9714-5_11.
Повний текст джерелаТези доповідей конференцій з теми "SiC SBD"
Omura, I., M. Tsukuda, W. Saito, and T. Domon. "High Power Density Converter using SiC-SBD." In 2007 Power Conversion Conference - Nagoya. IEEE, 2007. http://dx.doi.org/10.1109/pccon.2007.373024.
Повний текст джерелаTakao, K., Y. Hayashi, and H. Ohashi. "Study on High Frequency Limitation of SJ-MOSFET/SiC-SBD pair in Comparison with Normal MOSFET/SiC-SBD pair." In 2007 Power Conversion Conference - Nagoya. IEEE, 2007. http://dx.doi.org/10.1109/pccon.2007.373093.
Повний текст джерелаValdez-Nava, Zarel, Masahiro Kozako, Sorin Dinculescu, Ichiro Omura, Masayuki Hikita, and Thierry Lebey. "Packaging of SiC-SBD for high temperature operation." In 2012 14th International Conference on Electronic Materials and Packaging (EMAP). IEEE, 2012. http://dx.doi.org/10.1109/emap.2012.6507921.
Повний текст джерелаTominaga, Takaaki, Shiro Hino, Yohei Mitsui, Junichi Nakashima, Koutarou Kawahara, Shingo Tomohisa, and Naruhisa Miura. "Superior Switching Characteristics of SiC-MOSFET Embedding SBD." In 2019 31st International Symposium on Power Semiconductor Devices and ICs (ISPSD). IEEE, 2019. http://dx.doi.org/10.1109/ispsd.2019.8757664.
Повний текст джерелаChao, Zhang, Tang Xiao-Yan, Zhang Yu-Ming, Wang Wen, and Zhang Yi-Men. "a DC-DC boost converter based on SiC MOSFET and SiC SBD." In 2011 International Conference of Electron Devices and Solid-State Circuits (EDSSC). IEEE, 2011. http://dx.doi.org/10.1109/edssc.2011.6117660.
Повний текст джерелаChen, Gang, Yinglu Fang, Yun Li, Lin Wang, Song Bai, Ao Liu, Runhua Huang, Yonghong Tao, and Zhifei Zhao. "Fabrication and Characterization of 1200V 40A 4H-SiC SBD." In 2015 2nd International Forum on Electrical Engineering and Automation (IFEEA 2015). Paris, France: Atlantis Press, 2016. http://dx.doi.org/10.2991/ifeea-15.2016.12.
Повний текст джерелаHuang, Runhua, Yonghong Tao, Ling Wang, Gang Chen, Song Bai, Rui Li, Yun Li, and Zhifei Zhao. "Development of g10kv 4H-SiC SBD junction extension termination." In 2016 International Conference on Advanced Electronic Science and Technology (AEST 2016). Paris, France: Atlantis Press, 2016. http://dx.doi.org/10.2991/aest-16.2016.111.
Повний текст джерелаZhang, Fasheng, and Xinran Li. "The Simulation Breakdown Characteristic of 4H-SiC SBD with Field Rings." In 2010 International Conference on Electrical and Control Engineering (ICECE). IEEE, 2010. http://dx.doi.org/10.1109/icece.2010.760.
Повний текст джерелаNagahisa, Yuichi, Shiro Hino, Hideyuki Hatta, Koutarou Kawahara, Shingo Tomohisa, and Naruhisa Miura. "Novel Termination Structure Eliminating Bipolar Degradation of SBD-embedded SiC-MOSFET." In 2020 32nd International Symposium on Power Semiconductor Devices and ICs (ISPSD). IEEE, 2020. http://dx.doi.org/10.1109/ispsd46842.2020.9170088.
Повний текст джерелаYuan, Min, Houcai Luo, Chunjian Tan, Quan Zhou, Luqi Tao, Huaiyu Ye, and Xianping Chen. "Design and Simulation of 1800V 40A 4H-SiC SBD Using TCAD." In 2018 15th China International Forum on Solid State Lighting: International Forum on Wide Bandgap Semiconductors China (SSLChina: IFWS). IEEE, 2018. http://dx.doi.org/10.1109/ifws.2018.8587388.
Повний текст джерелаЗвіти організацій з теми "SiC SBD"
Camarillo, G., R. Penfield, A. Hawrylyshen, and M. Bhatia. Requirements from Session Initiation Protocol (SIP) Session Border Control (SBC) Deployments. Edited by J. Hautakorpi. RFC Editor, April 2010. http://dx.doi.org/10.17487/rfc5853.
Повний текст джерелаBerger, E. L., V. Guarino, J. Repond, H. Weerts, L. Xia, J. Zhang, Q. Zhang, et al. SiD Letter of Intent. Edited by H. ,. Aihara, P. ,. Burrows, and M. ,. Oreglia. Office of Scientific and Technical Information (OSTI), April 2012. http://dx.doi.org/10.2172/1038429.
Повний текст джерелаKajikawa, R. Precision Test at SLC/SLD. Office of Scientific and Technical Information (OSTI), November 2003. http://dx.doi.org/10.2172/826547.
Повний текст джерелаFrey, Raymond. Recent Electroweak Results from SLC/SLD. Office of Scientific and Technical Information (OSTI), June 2003. http://dx.doi.org/10.2172/813212.
Повний текст джерелаTantsura, J., U. Chunduri, S. Aldrin, and P. Psenak. Signaling Maximum SID Depth (MSD) Using OSPF. RFC Editor, December 2018. http://dx.doi.org/10.17487/rfc8476.
Повний текст джерелаLarkin, Ariana Kayla. Rad-Hard SBC: Radiation-Hardened Single-Board Computer. Office of Scientific and Technical Information (OSTI), November 2019. http://dx.doi.org/10.2172/1575755.
Повний текст джерелаTantsura, J., U. Chunduri, S. Aldrin, and L. Ginsberg. Signaling Maximum SID Depth (MSD) Using IS-IS. RFC Editor, November 2018. http://dx.doi.org/10.17487/rfc8491.
Повний текст джерелаDenisov, D. S., N. V. Mokhov, S. I. Striganov, M. A. Kostin, and I. S. Tropin. Machine-Related Backgrounds in the SiD Detector at ILC. Office of Scientific and Technical Information (OSTI), August 2006. http://dx.doi.org/10.2172/892406.
Повний текст джерелаHutchinson, Paul, Adolor Aisiri, Udochisom Anaba, Elizabeth Omoluabi, Akanni Akinyemi, U. C. Ifunanya Ozoadibe, and Dele Abegunde. Behavioral sentinel surveillance survey in Nigeria: Endline technical report. Population Council, June 2023. http://dx.doi.org/10.31899/sbsr2023.1020.
Повний текст джерелаBrau, James E., and Marcel Demarteau. SiD Linear Collider Detector R&D, DOE Final Report. Office of Scientific and Technical Information (OSTI), May 2015. http://dx.doi.org/10.2172/1182602.
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