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Статті в журналах з теми "SiC power MOSFET"
Lichtenwalner, Daniel J., Brett Hull, Vipindas Pala, Edward Van Brunt, Sei-Hyung Ryu, Joe J. Sumakeris, Michael J. O’Loughlin, Albert A. Burk, Scott T. Allen, and John W. Palmour. "Performance and Reliability of SiC Power MOSFETs." MRS Advances 1, no. 2 (2016): 81–89. http://dx.doi.org/10.1557/adv.2015.57.
Повний текст джерелаLi, Ruizhe. "The advantages and short circuit characteristics of SiC MOSFETs." Applied and Computational Engineering 49, no. 1 (March 22, 2024): 58–64. http://dx.doi.org/10.54254/2755-2721/49/20241059.
Повний текст джерелаHsu, Fu Jen, Cheng Tyng Yen, Hsiang Ting Hung, Jia Wei Hu, and Chih Fang Huang. "High Density 65W AC-DC Adaptor Enabled by SiC MOSFET with Ultralow V<sub>GS(on)</sub>." Key Engineering Materials 948 (June 6, 2023): 89–93. http://dx.doi.org/10.4028/p-tuypqj.
Повний текст джерелаFunaki, Tsuyoshi, Yuki Nakano, and Takashi Nakamura. "Comparative Study of SiC MOSFETs in High Voltage Switching Operation." Materials Science Forum 717-720 (May 2012): 1081–84. http://dx.doi.org/10.4028/www.scientific.net/msf.717-720.1081.
Повний текст джерелаKong, Moufu, Zewei Hu, Ronghe Yan, Bo Yi, Bingke Zhang, and Hongqiang Yang. "A novel SiC high-k superjunction power MOSFET integrated Schottky barrier diode with improved forward and reverse performance." Journal of Semiconductors 44, no. 5 (May 1, 2023): 052801. http://dx.doi.org/10.1088/1674-4926/44/5/052801.
Повний текст джерелаvan Zeghbroeck, Bart, and Hamid Fardi. "Comparison of 3C-SiC and 4H-SiC Power MOSFETs." Materials Science Forum 924 (June 2018): 774–77. http://dx.doi.org/10.4028/www.scientific.net/msf.924.774.
Повний текст джерелаQiu, Guoqing, Kedi Jiang, Shengyou Xu, Xin Yang, and Wei Wang. "Modeling and analysis of the characteristics of SiC MOSFET." Journal of Physics: Conference Series 2125, no. 1 (November 1, 2021): 012051. http://dx.doi.org/10.1088/1742-6596/2125/1/012051.
Повний текст джерелаMatocha, Kevin, Peter A. Losee, Arun Gowda, Eladio Delgado, Greg Dunne, Richard Beaupre, and Ljubisa Stevanovic. "Performance and Reliability of SiC MOSFETs for High-Current Power Modules." Materials Science Forum 645-648 (April 2010): 1123–26. http://dx.doi.org/10.4028/www.scientific.net/msf.645-648.1123.
Повний текст джерелаGreen, Ronald, Aivars J. Lelis, and Daniel B. Habersat. "Charge Trapping in Sic Power MOSFETs and its Consequences for Robust Reliability Testing." Materials Science Forum 717-720 (May 2012): 1085–88. http://dx.doi.org/10.4028/www.scientific.net/msf.717-720.1085.
Повний текст джерелаHan, Ki Jeong, B. Jayant Baliga, and Woong Je Sung. "1.2 kV 4H-SiC Split-Gate Power MOSFET: Analysis and Experimental Results." Materials Science Forum 924 (June 2018): 684–88. http://dx.doi.org/10.4028/www.scientific.net/msf.924.684.
Повний текст джерелаДисертації з теми "SiC power MOSFET"
Linewih, Handoko, and h. linewih@griffith edu au. "Design and Application of SiC Power MOSFET." Griffith University. School of Microelectronic Engineering, 2003. http://www4.gu.edu.au:8080/adt-root/public/adt-QGU20030506.013152.
Повний текст джерелаLinewih, Handoko. "Design and Application of SiC Power MOSFET." Thesis, Griffith University, 2003. http://hdl.handle.net/10072/367638.
Повний текст джерелаThesis (PhD Doctorate)
Doctor of Philosophy (PhD)
School of Microelectronic Engineering
Full Text
Chen, Cheng. "Studies of SiC power devices potential in power electronics for avionic applications." Thesis, Université Paris-Saclay (ComUE), 2016. http://www.theses.fr/2016SACLN045.
Повний текст джерелаMy PhD work in laboratories SATIE of ENS de Cachan and Ampère of INSA de Lyon is a part of project GEstioN OptiMisée de l’Energie (GENOME) to investigate the potential of some Silicon carbide (SiC) power devices (JFET, MOSFET and BJT) in power electronic converters dedicated to aeronautical applications for the development of more electric aircraft.The first part of my work investigates the robustness of MOSFET and SiC BJT subjected to short circuit. For SiC MOSFETs, under repetition of short-term short circuit, a gate leakage current seems to be an indicator of aging. We define repetitive critical energy to evaluate the robustness for repetition of short circuit. The effect of room temperature on the robustness of SiC MOSFET and BJT under short circuit stress is not evident. The capability of short circuit is not improved by reducing gate leakage current for MOSFET, while BJT shows a better robustness by limiting base current. For MSOFET, a significant increase in gate leakage current accelerates failure for DC voltage from 600V to 750V. After opening Rohm MOSFETs with a short circuit between gate and source after failure, the fusion of metallization is considered as the raison of failure. In this particular mode of failure, the short circuit between gate and source self-protects the chip and opens drain short current.The second part of the thesis is devoted to the study of SiC JFET, MSOFET and BJT in avalanche mode. The SemiSouth JFET and Fairchild BJT exhibit excellent robustness in the avalanche. On the contrary, the avalanche test reveals the fragility of Rohm MOSFET since it failed before entering avalanche mode. The failure of Rohm MOSFET and its low robustness in avalanche mode are related to the activation of parasitic bipolar transistor. The avalanche current is a very small part of the current in the inductor. It flows from the drain/collector to the gate/base to drive the transistor in linear mode. A high-value gate resistance effectively reduces the avalanche current through the drain-gate junction to the JFET.The third part of this thesis concerns the study of switching performance of SiC BJT at high switching frequency. We initially attempted to validate the switching loss measurements. After checking the accuracy of the electrical measurement compared to calorimetric measurement, electrical measurement is adopted for switching power losses but requires a lot of attention. Thanks to high carrier charge mobility of SiC material, SiC BJT does not require the use of anti-saturation diode. Finally, no significant variation in switching losses is observed over an ambient temperature range from 25°C to 200°C.The fourth part focuses on the study of SiC MOSFET behavior under HTB (High Temperature Reverse Bias) and in diode-less application in which the transistors conduct a reverse current through the channel, except for the dead time during which the body diode ensure the continuity of the current in the load. The results show that the body diode has no significant degradation when the reverse conduction of the MOSFET. Cree MOSFET under test shows a drift of the threshold voltage and a degradation of the gate oxide which are more significant during the tests in the diode-less application than under HTRB test. The drift of the threshold voltage is probably due to intense electric field in the oxide and the charge traps in the gate oxide
Rajagopal, Narayanan. "Design of 1.7 kV SiC MOSFET Switching-Cells for Integrated Power Electronics Building Block (iPEBB)." Thesis, Virginia Tech, 2021. http://hdl.handle.net/10919/104148.
Повний текст джерелаM.S.
This thesis presents the design of an integrated power electronics building block (iPEBB) for high-density systems. The PEBB concept allows for modular converters that can perform various power conversions. The design begins with exploring state-of-the-art substrates that will serve as the foundation for the iPEBB. Due to the integrated design, the substrate plays a vital role in the thermal, electrical, and mechanical performance, and contributes to the weight and reliability of the iPEBB. State-of-the-art organic direct-bonded copper (ODBC) substrates and multi-layer silicon nitride substrates are explored in this work. The ODBC is used to develop a common substrate for the converter, which allows for a high level of integration between different SiC half-bridges. Switching-cell prototypes based on the ODBC and multi-layer silicon nitride are fabricated to provide insight into the electrical and thermal performance of different substrates. This information will aid in the further redesign and refinement of the iPEBB concept.
Soler, Victor. "Design and process developments towards an optimal 6.5 kV SiC power MOSFET." Doctoral thesis, Universitat Politècnica de Catalunya, 2019. http://hdl.handle.net/10803/668916.
Повний текст джерелаUn futur sostenible requereix convertidors electrònics d'alta potència eficients per totes les fases del consum d'energia elèctrica. El carbur de silici (SiC) és un dels semiconductors de banda prohibida ampla més avançats que permet superar els límits de silici en dispositius de potència. El gran interès en els MOSFETs de potència SiC recau en que són interruptors unipolars que presenten una alta capacitat de tensió de bloqueig i una resistència específica relativament baixa. L’objectiu d’aquesta tesi és la optimització del disseny i el perfeccionament de la tecnologia de processos per a la millora dels MOSFETs d’alta tensió SiC tenint com a referencia els desenvolupaments previs realitzats pel grup. Els resultats d'aquesta investigació han permès la fabricació de MOSFETs de potència de SiC d’àrea gran amb capacitat de bloqueig des de 1,7 kV fins a 6,5 kV. Les inherents propietats del SiC requereixen solucions tecnològiques específiques per a integrar amb èxit un MOSFET de potència de tensió tan elevada. Per garantir una bona capacitat de bloqueig, s'han dissenyat diferents estructures de terminació planars, optimitzades per simulació i implementades sobre díodes PiN. Els esquemes de terminació considerats son JTE mono-zona, FGR i una nova estructura RA-JTE que combina una JTE amb anells flotants. La terminació RA-JTE, amb una menor sensibilitat a desviacions del procés de fabricació i menor àrea consumida, ha aconseguit més del 90% de la tensió ideal i bona capacitat de bloqueig per dispositius de fins a 6,5 kV. Les millores realitzades a la cel·la del MOSFET de SiC afecten tant al disseny com al procés de fabricació. L’optimització de la cel·la bàsica s’ha realitzat mitjançant simulacions TCAD i l’avaluació de dades experimentals mesurades en estructures de test específiques. Les tècniques aplicades per a la millora del rendiment dels MOSFETs de SiC inclouen: i) l’ús d’un perfil de dopatge retrògrad pel pou p per obtenir un valor de Vth adequada alhora que s'evita el punch-through del pou p, ii) canal auto-alineat de longitud sub-micrònica, iii) un tractament de bor a l'òxid de la porta per millorar la interfície, iv) la ubicació discreta del contacte p per reduir les dimensions de la cel·la, v) una regió de font menys dopada (LDS) per millorar la fiabilitat, vi) l’optimització de l’àrea JFET i vii) la integració de corredors de porta per reduir el temps de commutació. Com a resultat d'aquestes investigacions, un joc complet de màscares s’ha dissenyat i utilitzat per processar oblies de diferents rangs de tensió. Tots els processos de fabricació s’han realitzat a la sala blanca de l’IMB-CNM. La caracterització elèctrica dels MOSFETs d’àrea gran mostra una Vth en el rang de 5 V, control de la porta i bona capacitat de bloqueig. No obstant, la resistència específica és relativament alta a causa de les dimensions de cel·la i la baixa mobilitat al canal. Els MOSFETS de SiC fabricats commuten a altes tensions de bus, però el temps de transició està limitat per la resistència interna de porta. Els dispositius fabricats presenten una capacitat de curtcircuit (>15 µs) superior als dispositius comercials, principalment gràcies al disseny de la cel·la. L’anàlisi del comportament elèctric valida el funcionament satisfactori dels MOSFETs de SiC fabricats fins a 6,5 kV així com també el disseny de terminació RA-JTE. El nou tractament de bor a l’òxid de porta ha demostrat reduir la resistència dels VDMOS fabricats en totes les classes de tensió sense afectar a la capacitat de bloqueig i de curt-circuit, però en compromet l'estabilitat i la fiabilitat a més de 100 °C. Aquests resultats mostren que la qualitat de la interfície continua sent el punt clau per al desenvolupament de MOSFETs de potència fiables en SiC. Finalment, també s’han investigat estructures alternatives en SiC. Destaca la integració d’un IGBT...
Phankong, Nathabhat. "Characterization of SiC Power Transistors for Power Conversion Circuits Based on C-V Measurement." 京都大学 (Kyoto University), 2010. http://hdl.handle.net/2433/126807.
Повний текст джерелаDiMarino, Christina Marie. "High Temperature Characterization and Analysis of Silicon Carbide (SiC) Power Semiconductor Transistors." Thesis, Virginia Tech, 2014. http://hdl.handle.net/10919/78116.
Повний текст джерелаMaster of Science
STELLA, FAUSTO. "On-line Junction Temperature Estimation of SiC Power MOSFETs." Doctoral thesis, Politecnico di Torino, 2019. http://hdl.handle.net/11583/2734315.
Повний текст джерелаFrancisco, sousa alves Luciano. "Series-connected SiC-MOSFETs : A Novel Multi-Step Packaging Concept and New Gate Drive Power Supply Configurations." Thesis, Université Grenoble Alpes, 2020. http://www.theses.fr/2020GRALT050.
Повний текст джерелаThis work investigates new gate drive power supply configurations and a novel multi-steppackaging concept in order to improve the performance of series-connected SiC-MOSFETs. The new gate drive configurations are proposed in order to reduce noise currents that circulate in the control part of the electrical system. Furthermore, a new gate drive power supply is proposed to increase the dv/dt of the switching cell. These improvements, i.e., noise current reduction and dv/dt boosting, are achieved by modifying the impedance of the gate drive circuitry. The novel multi-step packaging concept is proposed in order to improve the voltage sharing performance. The proposed package geometry considers optimal dielectric isolation for each device leading to a multi-step geometry. It has a significant impact on the parasitic capacitances introduced by the packaging structure that are responsible for voltageunbalances. The new gate driver configurations and the proposed multi-step packaging concepts are introduced and analysed thanks to equivalent models and time domain simulations. Then, experimental set-ups are performed to confirm that the proposed concepts are better than traditional ones in terms of voltage balancing, switching speed and conducted EMI reduction
Noborio, Masato. "Fundamental Study on SiC Metal-Insulator-Semiconductor Devices for High-Voltage Power Integrated Circuits." 京都大学 (Kyoto University), 2009. http://hdl.handle.net/2433/78006.
Повний текст джерелаКниги з теми "SiC power MOSFET"
Gunn, Steven. Law and power. Oxford University Press, 2017. http://dx.doi.org/10.1093/acprof:oso/9780199659838.003.0010.
Повний текст джерелаWilliams, Sonja D. Black Political Power. University of Illinois Press, 2017. http://dx.doi.org/10.5406/illinois/9780252039874.003.0012.
Повний текст джерелаStaples, Lee. Roots to Power. 3rd ed. ABC-CLIO, LLC, 2016. http://dx.doi.org/10.5040/9798216010050.
Повний текст джерелаBradford, Alfred S. Leonidas and the kings of Sparta. ABC-CLIO, LLC, 2011. http://dx.doi.org/10.5040/9798400678288.
Повний текст джерелаGentry, John A. How Wars Are Won and Lost. ABC-CLIO, LLC, 2011. http://dx.doi.org/10.5040/9798400666971.
Повний текст джерелаLeo, Russ, Katrin Röder, and Freya Sierhuis, eds. Fulke Greville and the Culture of the English Renaissance. Oxford University Press, 2018. http://dx.doi.org/10.1093/oso/9780198823445.001.0001.
Повний текст джерелаThompson, William R., and Leila Zakhirova. The Netherlands: Not Quite the First Modern Economy. Oxford University Press, 2018. http://dx.doi.org/10.1093/oso/9780190699680.003.0006.
Повний текст джерелаUlrichsen, Kristian Coates. Qatar and the Gulf Crisis. Oxford University Press, 2020. http://dx.doi.org/10.1093/oso/9780197525593.001.0001.
Повний текст джерелаHanson, Jeffrey, and Sharon Krishek, eds. Kierkegaard's <I>The Sickness Unto Death</I>. Cambridge University Press, 2022. http://dx.doi.org/10.1017/9781108883832.
Повний текст джерелаTrollope, Anthony. Orley Farm. Edited by Francis O'Gorman. Oxford University Press, 2018. http://dx.doi.org/10.1093/owc/9780198803744.001.0001.
Повний текст джерелаЧастини книг з теми "SiC power MOSFET"
Baliga, B. Jayant. "SiC Planar MOSFET Structures." In Advanced Power MOSFET Concepts, 477–533. Boston, MA: Springer US, 2010. http://dx.doi.org/10.1007/978-1-4419-5917-1_9.
Повний текст джерелаBaliga, B. Jayant. "SiC Planar MOSFET Structures." In Advanced High Voltage Power Device Concepts, 235–92. New York, NY: Springer New York, 2011. http://dx.doi.org/10.1007/978-1-4614-0269-5_6.
Повний текст джерелаM’Sirdi, N. K., K. Frifita, E. Baghaz, A. Naamane, and M. Boussak. "State Space Models for Power SiC MOSFET." In Lecture Notes in Electrical Engineering, 298–305. Singapore: Springer Singapore, 2018. http://dx.doi.org/10.1007/978-981-13-1405-6_36.
Повний текст джерелаGuzman, Cristina, Alben Cardenas, Kodjo Agbossou, and Mamadou Doumbia. "Modeling of SiC MOSFET for Power Electronics Converters Simulation." In Data-Driven Modeling for Sustainable Engineering, 361–74. Cham: Springer International Publishing, 2019. http://dx.doi.org/10.1007/978-3-030-13697-0_27.
Повний текст джерелаImaizumi, Masayuki, Yoichiro Tarui, Shin-Ichi Kinouchi, Hiroshi Nakatake, Yukiyasu Nakao, Tomokatsu Watanabe, Keiko Fujihira, Naruhisa Miura, Tetsuya Takami, and Tatsuo Ozeki. "Switching Characteristics of SiC-MOSFET and SBD Power Modules." In Silicon Carbide and Related Materials 2005, 1289–92. Stafa: Trans Tech Publications Ltd., 2006. http://dx.doi.org/10.4028/0-87849-425-1.1289.
Повний текст джерелаJouha, W., A. El Oualkadi, P. Dherbécourt, E. Joubert, and M. Masmoudi. "An Extraction Method of SiC Power MOSFET Threshold Voltage." In Recent Advances in Electrical and Information Technologies for Sustainable Development, 11–20. Cham: Springer International Publishing, 2019. http://dx.doi.org/10.1007/978-3-030-05276-8_2.
Повний текст джерелаWu, Yifan, Chi Li, Zedong Zheng, Lianzhong Wang, Tao Liu, and Guojing Liu. "A Behavior Model of Planar SiC MOSFET Considering Avalanche Breakdown." In The Proceedings of 2022 International Conference on Wireless Power Transfer (ICWPT2022), 748–65. Singapore: Springer Nature Singapore, 2023. http://dx.doi.org/10.1007/978-981-99-0631-4_75.
Повний текст джерелаXie, Ning, Yanjun Zhao, Wei Zhao, Jingpeng Yue, Wei Wang, and Chiye Zhang. "Design Method for Power Unit of Power Conversion System Based on SiC MOSFET." In Lecture Notes in Electrical Engineering, 384–95. Singapore: Springer Singapore, 2022. http://dx.doi.org/10.1007/978-981-19-1528-4_39.
Повний текст джерелаDeng, Dahan, Jingwei Zhang, and Shuhao Li. "SiC MOSFET Gate Drive Power Supply Based on Active Clamp Flyback." In The Proceedings of 2022 International Conference on Wireless Power Transfer (ICWPT2022), 614–22. Singapore: Springer Nature Singapore, 2023. http://dx.doi.org/10.1007/978-981-99-0631-4_61.
Повний текст джерелаWang, Xinying, Xiaofeng Tao, Leilei Zhan, Xin Tang, Yonghao Sun, Yibo Sun, Chaohui Cui, et al. "Design of Wide Voltage Range DC–DC Converter Based on SiC MOSFET." In Conference Proceedings of 2022 2nd International Joint Conference on Energy, Electrical and Power Engineering, 594–602. Singapore: Springer Nature Singapore, 2023. http://dx.doi.org/10.1007/978-981-99-4334-0_74.
Повний текст джерелаТези доповідей конференцій з теми "SiC power MOSFET"
Pratap, Rajendra, R. K. Singh, and Vineeta Agarwal. "SiC Power MOSFET modeling challenges." In 2012 Students Conference on Engineering and Systems (SCES). IEEE, 2012. http://dx.doi.org/10.1109/sces.2012.6199109.
Повний текст джерелаDe, D., S. Lopez-Arevalo, A. Lamantia, and A. Castellazzi. "SiC MOSFET based Avionic Power Supply." In 7th IET International Conference on Power Electronics, Machines and Drives (PEMD 2014). Institution of Engineering and Technology, 2014. http://dx.doi.org/10.1049/cp.2014.0339.
Повний текст джерелаMatocha, Kevin. "Challenges in SiC power MOSFET design." In 2007 International Semiconductor Device Research Symposium. IEEE, 2007. http://dx.doi.org/10.1109/isdrs.2007.4422412.
Повний текст джерелаZhuolin, Duan, Zhang Dong, Fan Tao, and Wen Xuhui. "A simple SiC power MOSFET model." In IECON 2017 - 43rd Annual Conference of the IEEE Industrial Electronics Society. IEEE, 2017. http://dx.doi.org/10.1109/iecon.2017.8216122.
Повний текст джерелаSu, Gui-Jia. "Loss Modeling for SiC MOSFET Inverters." In 2018 IEEE Vehicle Power and Propulsion Conference (VPPC). IEEE, 2018. http://dx.doi.org/10.1109/vppc.2018.8604972.
Повний текст джерелаRice, Julius, and John Mookken. "SiC MOSFET gate drive design considerations." In 2015 IEEE International Workshop on Integrated Power Packaging (IWIPP). IEEE, 2015. http://dx.doi.org/10.1109/iwipp.2015.7295969.
Повний текст джерелаYamane, A., K. Koyanagi, M. Kozako, K. Fuji, and M. Hikita. "Fabrication and evaluation of SiC inverter using SiC-MOSFET." In 2013 IEEE 10th International Conference on Power Electronics and Drive Systems (PEDS 2013). IEEE, 2013. http://dx.doi.org/10.1109/peds.2013.6527171.
Повний текст джерелаBeczkowski, Szymon, Helong Li, Christian Uhrenfeldt, Emanuel-Petre Eni, and Stig Munk-Nielsen. "10kV SiC MOSFET split output power module." In 2015 17th European Conference on Power Electronics and Applications (EPE'15 ECCE-Europe). IEEE, 2015. http://dx.doi.org/10.1109/epe.2015.7309450.
Повний текст джерелаPratap, Rajendra, R. K. Singh, and Vineeta Agarwal. "SPICE model development for SiC power MOSFET." In 2012 IEEE International Conference on Power Electronics, Drives and Energy Systems (PEDES). IEEE, 2012. http://dx.doi.org/10.1109/pedes.2012.6484369.
Повний текст джерелаLinewih, Handoko, Sima Dimitrijev, and H. Barry Harrison. "Development of power accumulation-type SiC MOSFET." In Asia Pacific Symposium on Microelectronics and MEMS, edited by Bernard Courtois and Serge N. Demidenko. SPIE, 1999. http://dx.doi.org/10.1117/12.368421.
Повний текст джерелаЗвіти організацій з теми "SiC power MOSFET"
Sbrockey, Nick M., Gary S. Tompa, Michael G. Spencer, and Chandra M. V. S. Chandrashekhar. SiC Power MOSFET with Improved Gate Dielectric. Office of Scientific and Technical Information (OSTI), August 2010. http://dx.doi.org/10.2172/1067486.
Повний текст джерелаCooper, James A., and Jr. Development of SiC Power MOSFETs with Low On-Resistance for Military and Commercial Applications. Fort Belvoir, VA: Defense Technical Information Center, March 2003. http://dx.doi.org/10.21236/ada414680.
Повний текст джерелаVandevort, Daniel, Chandler Engel, Shaun Stanton, and Jeffrey Ellis. Application of limited-field-data methods in reservoir volume estimation : a case study. Engineer Research and Development Center (U.S.), March 2024. http://dx.doi.org/10.21079/11681/48268.
Повний текст джерелаSalonen, Hilma, and Lumi Tomrén. Can local value creation induce a sense of justice during green transitions? A study of six rural areas in Denmark, Finland, and Norway. Nordregio, September 2023. http://dx.doi.org/10.6027/r:2023:91403-2503.
Повний текст джерелаAmores, Antonio F., Henrique Basso, Johannes Simeon Bischl, Paola De Agostini, Silvia De Poli, Emanuele Dicarlo, Maria Flevotomou, et al. Inflation, fiscal policy and inequality. The distributional impact of fiscal measures to compensate for consumer inflation. Madrid: Banco de España, May 2024. http://dx.doi.org/10.53479/36624.
Повний текст джерелаTaylor, S., J. Lever, K. Burgess, R. Stroud, D. Brownlee, L. Nittler, A. Bardyn, et al. Sampling interplanetary dust from Antarctic air. Engineer Research and Development Center (U.S.), February 2022. http://dx.doi.org/10.21079/11681/43345.
Повний текст джерелаMicco, Alejandro, and Natalia Pérez. Determinants of Maritime Transport Costs. Inter-American Development Bank, April 2002. http://dx.doi.org/10.18235/0011324.
Повний текст джерелаWeinschenk, Craig, Daniel Madrzykowski, and Paul Courtney. Impact of Flashover Fire Conditions on Exposed Energized Electrical Cords and Cables. UL Firefighter Safety Research Institute, October 2019. http://dx.doi.org/10.54206/102376/hdmn5904.
Повний текст джерелаEberle, Caitlyn, Jack O'Connor, Liliana Narvaez, Melisa Mena Benavides, and Zita Sebesvari. Interconnected Disaster Risks 2023: Risk Tipping Points. United Nations University - Institute for Environment and Human Security (UNU-EHS), October 2023. http://dx.doi.org/10.53324/wtwn2495.
Повний текст джерелаNikula, Blair, and Robert Cook. Status and distribution of Odonates at Cape Cod National Seashore. National Park Service, 2024. http://dx.doi.org/10.36967/2303254.
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