Готові списки джерел за темами / SiC power device

Добірка наукової літератури з теми "SiC power device"

Автор: Grafiati
Опубліковано: 14 березня 2023

Оформте джерело за APA, MLA, Chicago, Harvard та іншими стилями

Оберіть тип джерела:

Зміст

Ознайомтеся зі списками актуальних статей, книг, дисертацій, тез та інших наукових джерел на тему "SiC power device".

Біля кожної праці в переліку літератури доступна кнопка «Додати до бібліографії». Скористайтеся нею – і ми автоматично оформимо бібліографічне посилання на обрану працю в потрібному вам стилі цитування: APA, MLA, «Гарвард», «Чикаго», «Ванкувер» тощо.

Також ви можете завантажити повний текст наукової публікації у форматі «.pdf» та прочитати онлайн анотацію до роботи, якщо відповідні параметри наявні в метаданих.

Статті в журналах з теми "SiC power device"

1

Harris, C. I., A. O. Konstantinov, C. Hallin, and E. Janzén. "SiC power device passivation using porous SiC." Applied Physics Letters 66, no. 12 (March 20, 1995): 1501–2. http://dx.doi.org/10.1063/1.113668.

Повний текст джерела
Стилі APA, Harvard, Vancouver, ISO та ін.
2

Lichtenwalner, Daniel J., Brett Hull, Vipindas Pala, Edward Van Brunt, Sei-Hyung Ryu, Joe J. Sumakeris, Michael J. O’Loughlin, Albert A. Burk, Scott T. Allen, and John W. Palmour. "Performance and Reliability of SiC Power MOSFETs." MRS Advances 1, no. 2 (2016): 81–89. http://dx.doi.org/10.1557/adv.2015.57.

Повний текст джерела
Анотація:
ABSTRACTDue to the wide bandgap and other key materials properties of 4H-SiC, SiC MOSFETs offer performance advantages over competing Si-based power devices. For example, SiC can more easily be used to fabricate MOSFETs with very high voltage ratings, and with lower switching losses. Silicon carbide power MOSFET development has progressed rapidly since the market release of Cree’s 1200V 4H-SiC power MOSFET in 2011. This is due to continued advancements in SiC substrate quality, epitaxial growth capabilities, and device processing. For example, high-quality epitaxial growth of thick, low-doped SiC has enabled the fabrication of SiC MOSFETs capable of blocking extremely high voltages (up to 15kV); while dopant control for thin highly-doped epitaxial layers has helped enable low on-resistance 900V SiC MOSFET production. Device design and processing improvements have resulted in lower MOSFET specific on-resistance for each successive device generation. SiC MOSFETs have been shown to have a long device lifetime, based on the results of accelerated lifetime testing, such as high-temperature reverse-bias (HTRB) stress and time-dependent dielectric breakdown (TDDB).
Стилі APA, Harvard, Vancouver, ISO та ін.
3

Chow, T. Paul. "SiC Bipolar Power Devices." MRS Bulletin 30, no. 4 (April 2005): 299–304. http://dx.doi.org/10.1557/mrs2005.77.

Повний текст джерела
Анотація:
AbstractThe successful commercialization of unipolar Schottky rectifiers in the 4H polytype of silicon carbide has resulted in a market demand for SiC high-power switching devices. This article reviews recent progress in the development of high-voltage 4H-SiC bipolar power electronics devices.We also present the outstanding material and processing challenges, reliability concerns, and future trends in device commercialization.
Стилі APA, Harvard, Vancouver, ISO та ін.
4

van Zeghbroeck, Bart, and Hamid Fardi. "Comparison of 3C-SiC and 4H-SiC Power MOSFETs." Materials Science Forum 924 (June 2018): 774–77. http://dx.doi.org/10.4028/www.scientific.net/msf.924.774.

Повний текст джерела
Анотація:
A comprehensive comparison of 3C-SiC and 4H-SiC power MOSFETs was performed, aimed at quantifying and comparing the devices’ on-resistance and switching loss. To this end, the relevant material parameters were collected using experimental data where available, or those obtained by simulation. This includes the bulk mobility as a function of doping density, the breakdown field as a function of doping and the MOSFET channel mobility. A device model was constructed and then used to calculate the on-resistance and breakdown voltage of a properly scaled device as a function of the doping density of the blocking layer. A SPICE model was constructed to explore the switching transients and switching losses. The simulations indicate that, for the chosen material parameters, a 600 V 3C-SiC MOSFET has an on-resistance, which is less than half that of a 4H-SiC MOSFET as are the switching losses in the device.
Стилі APA, Harvard, Vancouver, ISO та ін.
5

Friedrichs, Peter. "SiC Power Devices as Enabler for High Power Density - Aspects and Prospects." Materials Science Forum 778-780 (February 2014): 1104–9. http://dx.doi.org/10.4028/www.scientific.net/msf.778-780.1104.

Повний текст джерела
Анотація:
Comparable to silicon the main way to improve the cost performance of SiC power devices is to go up with current density since the main selling point of a power device is its current handling capability. To follow this path successfully a couple of application and system relevant aspects should be taken into account beside the pure focus on reducing nominal or absolute losses at chip level. This paper will address some of those topics in combination with discussing state of the art device technologies on SiC. Also some considerations regarding the operation of SiC devices at elevated temperatures will be given, mainly targeting for increased power density and reduced losses in power electronic systems.
Стилі APA, Harvard, Vancouver, ISO та ін.
6

Palmer, Michael J., R. Wayne Johnson, Tracy Autry, Rizal Aguirre, Victor Lee, and James D. Scofield. "SiC Power Switch Module." Additional Conferences (Device Packaging, HiTEC, HiTEN, and CICMT) 2010, HITEC (January 1, 2010): 000316–24. http://dx.doi.org/10.4071/hitec-rwjohnson-wp26.

Повний текст джерела
Анотація:
A hermetic, multichip power package for silicon carbide devices that will operate in a 200°C ambient and switch 50 to 100 amps has been developed. The Al2O3/MoCu structure, upon which the SiC JFETs and diodes have been attached, was designed in a manner to hermetically seal the device areas. Details of the materials and processes used to fabricate the package are discussed. Die attach, ribbon bonding and lid attach are also described.
Стилі APA, Harvard, Vancouver, ISO та ін.
7

Soelkner, Gerald, Winfried Kaindl, Michael Treu, and Dethard Peters. "Reliability of SiC Power Devices Against Cosmic Radiation-Induced Failure." Materials Science Forum 556-557 (September 2007): 851–56. http://dx.doi.org/10.4028/www.scientific.net/msf.556-557.851.

Повний текст джерела
Анотація:
Cosmic radiation has been identified as a decisive factor for power device reliability. Energetic neutrons create ionizing recoils within the semiconductor substrate which may lead to device burnout. While this failure mode has gained widespread acceptance for power devices based on silicon the question whether a similar mechanism could also lead to failure of SiC devices was left to be debated. Radiation hardness intrinsic to the SiC material was generally assumed but as experimental data was scarce reliability problems due to radiation-induced device failure could not be ruled out. Recent accelerated testing results now show that cosmic radiation will indeed affect the reliability of SiC power devices, as it is the case for its silicon counterpart, but the problem can be contained very effectively by device design.
Стилі APA, Harvard, Vancouver, ISO та ін.
8

Al-bayati, Ali Mahmoud Salman. "Behavior, Switching Losses, and Efficiency Enhancement Potentials of 1200 V SiC Power Devices for Hard-Switched Power Converters." CPSS Transactions on Power Electronics and Applications 7, no. 2 (June 30, 2022): 113–29. http://dx.doi.org/10.24295/cpsstpea.2022.00011.

Повний текст джерела
Анотація:
Semiconductor power devices are the major constituents of any power conversion system. These systems are faced by many circumscriptions due to the operating constraints of silicon (Si) based semiconductors under certain conditions. The emergence and persistence evolution of wide bandgap technology pledge to transcend the restrictions imposed by Si based semiconductors. This paper presents a thorough experimental study and assessment of the performance of three power devices: 1200 V SiC cascode, 1200 V SiC MOSFET, and 1200 V Si IGBT under the same hardware setup. The study aims to capture the major attributes for each power device toward determining their realistic potential applications. The switching performance of each power device is studied and reported. As the gate resistance is a crucial factor in a power device characterization, an extensive analysis of hard-switching losses under different separated turn-on and turn-off gate resistances is also performed and discussed. To appraise the fast switching capability, the switching dv/dts and di/dts are measured and analyzed for each power device. Furthermore, insights are provided about the dependency of switching energy losses on the power device current and blocking voltage. This paper also focuses on evaluating the operations and the performances of these power devices in a hard-switched dc-dc converter topology. While using of 1200 V SiC Schottky diode in the converter design with each power device, the high switching frequency operations and efficiency of the converter are reported and thoroughly explored. The SiC cascode exhibited superior performance when compared to the other two power devices. The results and analyses represent guidelines and prospects for designing advanced power conversion systems.
Стилі APA, Harvard, Vancouver, ISO та ін.
9

Walden, Ginger G., Ty McNutt, Marc Sherwin, Stephen Van Campen, Ranbir Singh, and Rob Howell. "Comparison of 10 kV 4H-SiC Power MOSFETs and IGBTs for High Frequency Power Conversion." Materials Science Forum 600-603 (September 2008): 1139–42. http://dx.doi.org/10.4028/www.scientific.net/msf.600-603.1139.

Повний текст джерела
Анотація:
For the first time, large area 10 kV SiC power devices are being produced capable of yielding power modules for high-frequency megawatt power conversion. To this end, the switching performance and power dissipation of silicon carbide (SiC) n-channel IGBTs and MOSFETs are evaluated using numerical simulations software over an extended current range to determine the best device suitable for 10 kV applications. Each device is also optimized for minimal forward voltage drop in the on-state.
Стилі APA, Harvard, Vancouver, ISO та ін.
10

Chowdhury, Sauvik, Zachary Stum, Zhong Da Li, Katsunori Ueno, and T. Paul Chow. "Comparison of 600V Si, SiC and GaN Power Devices." Materials Science Forum 778-780 (February 2014): 971–74. http://dx.doi.org/10.4028/www.scientific.net/msf.778-780.971.

Повний текст джерела
Анотація:
In this paper the DC and switching performance of 600V Si, SiC and GaN power devices using device simulation. The devices compared are Si superjunction MOSFET, Si field stop IGBT, SiC UMOSFET and GaN HEMT.
Стилі APA, Harvard, Vancouver, ISO та ін.
Більше джерел

Дисертації з теми "SiC power device"

1

Yang, Nanying. "Characterization and modeling of silicon and silicon carbide power devices." Diss., Virginia Tech, 2010. http://hdl.handle.net/10919/29643.

Повний текст джерела
Анотація:
Power devices play key roles in the power electronics applications. In order for the power electronics designers to fully utilize the performance advantages of power devices, compact power device models are needed in the circuit simulator (Saber, P-spice, etc.). Therefore, it is very important to get accurate device models. However, there are many challenges due to the development of new power devices with new internal structure and new semiconductor materials (SiC, GaN, etc.). In this dissertation, enhanced power diode model is presented with an improvement in the reverse blocking region. In the current power diode model in the Saber circuit simulator, an empirical approach was used to describe the low-bias reverse blocking region by introducing an effect called â conduction loss,â a parameter that causes a linear relationship between the device voltage and current at low bias voltages with no physics meaning. Furthermore, this term is not sufficient to accurately describe the changes to the device characteristics as the junction temperature is varied. In the enhanced model, an analytical temperature dependent model for the reverse blocking characteristics has been developed for Schottky/JBS diodes by including the thermionic-emission mechanism in the low-bias range. The newly derived model equations have been implemented in Saber circuit simulator using MAST language. An automated parameter extraction software package developed for constructing silicon (Si) and silicon carbide (SiC) power diode models, which is called DIode Model Parameter extrACtion Tools (DIMPACT). This software tool extracts the data necessary to establish a library of power diode component models and provides a method for quantitatively comparing between different types of devices and establishing performance metrics for device development. This dissertation also presents a new Saber-compatible approach for modeling the inter-electrode capacitances of the Si CoolMOSTM transistor. This new approach accurately describes all three inter-electrode capacitances (i.e., gate-drain, gate-source, and drain-source capacitances) for the full operating range of the device. The model is derived using the actual charge distribution within the device rather than assuming a lumped charge or one-dimensional charge distribution. The comparison between the simulated data with the measured results validates the accuracy of the new physical model.
Ph. D.
Стилі APA, Harvard, Vancouver, ISO та ін.
2

Chen, Zheng. "Electrical Integration of SiC Power Devices for High-Power-Density Applications." Diss., Virginia Tech, 2013. http://hdl.handle.net/10919/23923.

Повний текст джерела
Анотація:
The trend of electrification in transportation applications has led to the fast development of high-power-density power electronics converters. High-switching-frequency and high-temperature operations are the two key factors towards this target. Both requirements, however, are challenging the fundamental limit of silicon (Si) based devices. The emerging wide-bandgap, silicon carbide (SiC) power devices have become the promising solution to meet these requirements. With these advanced devices, the technology barrier has now moved to the compatible integration technology that can make the best of device capabilities in high-power-density converters. Many challenges are present, and some of the most important issues are explored in this dissertation. First of all, the high-temperature performances of the commercial SiC MOSFET are evaluated extensively up to 200 degree C. The static and switching characterizations show that the device has superior electrical performances under elevated temperatures. Meanwhile, the gate oxide stability of the device - a known issue to SiC MOSFETs in general - is also evaluated through both high-temperature gate biasing and gate switching tests. Device degradations are observed from these tests, and a design trade-off between the performance and reliability of the SiC MOSFET is concluded. To understand the interactions between devices and circuit parasitics, an experimental parametric study is performed to investigate the influences of stray inductances on the MOSFETs switching waveforms. A small-signal model is then developed to explain the parasitic ringing in the frequency domain. From this angle, the ringing mechanism can be understood more easily and deeply. With the use of this model, the effects of DC decoupling capacitors in suppressing the ringing can be further explained in a more straightforward way than the traditional time-domain analysis. A rule of thumb regarding the capacitance selection is also derived. A Power Electronics Building Block (PEBB) module is then developed with discrete SiC MOSFETs. Integrating the power stage together with the peripheral functions such as gate drive and protection, the PEBB concept allows the converter to be built quickly and reliably by simply connecting several PEBB modules. The high-speed gate drive and power stage layout designs are presented to enable fast and safe switching of the SiC MOSFET. Based on the PEBB platform, the state-of-the-art Si and SiC power MOSFETs are also compared in the device characteristics, temperature influences, and loss distributions in a high-frequency converter, so that special design considerations can be concluded for the SiC MOSFET. Towards high-temperature, high-frequency and high-power operations, integrated wire-bond phase-leg modules are also developed with SiC MOSFET bare dice. High-temperature packaging materials are carefully selected based on an extensive literature survey. The design considerations of improved substrate layout, laminated bus bars, and embedded decoupling capacitors are all discussed in detail, and are verified through a modeling and simulation approach in the design stage. The 200 degree C, 100 kHz continuous operation is demonstrated on the fabricated module. Through the comparison with a commercial SiC phase-leg module designed in the traditional way, it is also shown that the design considerations proposed in this work allow the SiC devices in the wire-bond structure to be switched twice as fast with only one-third of the parasitic ringing. To further push the performance of SiC power modules, a novel hybrid packaging technology is developed which combines the small parasitics and footprint of a planar module with the easy fabrication of a wire-bond module. The original concept is demonstrated on a high-temperature rectifier module with SiC JFET. A modified structure is then proposed to further improve design flexibility and simplify module fabrication. The SiC MOSFET phase-leg module built in this structure successfully reaches the switching speed limit of the device almost without any parasitic ringing. Finally, a new switching loop snubber circuit is proposed to damp the parasitic ringing through magnetic coupling without affecting either conduction or switching losses of the device. The concept is analyzed theoretically and verified experimentally. The initial integration of such a circuit into the power module is presented, and possible improvements are proposed.
Ph. D.
Стилі APA, Harvard, Vancouver, ISO та ін.
3

Phankong, Nathabhat. "Characterization of SiC Power Transistors for Power Conversion Circuits Based on C-V Measurement." 京都大学 (Kyoto University), 2010. http://hdl.handle.net/2433/126807.

Повний текст джерела
Стилі APA, Harvard, Vancouver, ISO та ін.
4

Bertilsson, Kent. "Simulation and Optimization of SiC Field Effect Transistors." Doctoral thesis, KTH, Microelectronics and Information Technology, IMIT, 2004. http://urn.kb.se/resolve?urn=urn:nbn:se:kth:diva-81.

Повний текст джерела
Анотація:

Silicon Carbide (SiC) is a wide band-gap semiconductor material with excel-lent material properties for high frequency, high power and high temperature elec-tronics. In this work different SiC field-effect transistors have been studied using theoretical methods, with the focus on both the devices and the methods used. The rapid miniaturization of commercial devices demands better physical models than the drift-diffusion and hydrodynamic models most commonly used at present.

The Monte Carlo method is the most accurate physical methods available and has been used in this work to study the performance in short-channel SiC field-effect devices. The drawback of the Monte-Carlo method is the computational power required and it is thus not well suited for device design where the layout requires to be optimized for best device performance. One approach to reduce the simulation time in the Monte Carlo method is to use a time-domain drift-diffusion model in contact and bulk regions of the device. In this work, a time-domain drift-diffusion model is implemented and verified against commercial tools and would be suitable for inclusion in the Monte-Carlo device simulator framework.

Device optimization is traditionally performed by hand, changing device pa-rameters until sufficient performance is achieved. This is very time consuming work without any guarantee of achieving an optimal layout. In this work a tool is developed, which automatically changes device layout until optimal device per-formance is achieved. Device optimization requires hundreds of device simulations and thus it is essential that computationally efficient methods are used. One impor-tant physical process for RF power devices is self heating. Self heating can be fairly accurately modeled in two dimensions but this will greatly reduce the computa-tional speed. For realistic influence self heating must be studied in three dimensions and a method is developed using a combination of 2D electrical and 3D thermal simulations. The accuracy is much improved by using the proposed method in comparison to a 2D coupled electro/thermal simulation and at the same time offers greater efficiency. Linearity is another very important issue for RF power devices for telecommunication applications. A method to predict the linearity is imple-mented using nonlinear circuit simulation of the active device and neighboring passive elements.

Стилі APA, Harvard, Vancouver, ISO та ін.
5

Noborio, Masato. "Fundamental Study on SiC Metal-Insulator-Semiconductor Devices for High-Voltage Power Integrated Circuits." 京都大学 (Kyoto University), 2009. http://hdl.handle.net/2433/78006.

Повний текст джерела
Стилі APA, Harvard, Vancouver, ISO та ін.
6

Lee, Sang Kwon. "Processing and characterization of silicon carbide (6H-SiC and 4H-SiC) contacts for high power and high temperature device applications." Doctoral thesis, KTH, Microelectronics and Information Technology, IMIT, 2002. http://urn.kb.se/resolve?urn=urn:nbn:se:kth:diva-3335.

Повний текст джерела
Анотація:

Silicon carbide is a promising wide bandgap semiconductormaterial for high-temperature, high-power, and high-frequencydevice applications. However, there are still a number offactors that are limiting the device performance. Among them,one of the most important and critical factors is the formationof low resistivity Ohmic contacts and high-temperature stableSchottky diodes on silicon carbide.

In this thesis, different metals (TiW, Ti, TiC, Al, and Ni)and different deposition techniques (sputtering andevaporation) were suggested and investigated for this purpose.Both electrical and material characterizations were performedusing various techniques, such as I-V, C-V, RBS, XRD, XPS,LEED, SEM, AFM, and SIMS.

For the Schottky contacts to n- and p-type 4H-SiC, sputteredTiW Schottky contacts had excellent rectifying behavior afterannealing at 500 ºC in vacuum with a thermally stableideality factor of 1.06 and 1.08 for n- and p-type,respectively. It was also observed that the SBH for p-type SiC(ΦBp) strongly depends on the choice the metal with alinear relationship ΦBp= 4.51 - 0.58Φm, indicating no strong Fermi-level pinning.Finally, the behavior of Schottky diodes was investigated byincorporation of size-selected Au nano-particles in Ti Schottkycontacts on silicon carbide. The reduction of the SBH isexplained by using a simple dipole layer approach, withenhanced electric field at the interface due to the small sizeof the circular patch (Au nano-particles) and large differenceof the barrier height between two metals (Ti and Au) on both n-and p-SiC.

For the Ohmic contacts, titanium carbide (TiC) was used ascontacts to both n- and p-type 4H-SiC epilayers as well as onAl implanted layers. The TiC contacts were epitaxiallydeposited using a co-evaporation method with an e-beam Tisource and a Knudsen cell for C60, in a UHV system at low substrate temperature(500 ºC). In addition, we extensively investigatedsputtered TiW (weight ratio 30:70) as well as evaporated NiOhmic contacts on both n- and p-type epilayers of SiC. The bestOhmic contacts to n-type SiC are annealed Ni (>950ºC)with the specific contact resistance of ≈ 8× 10-6Ω cm2with doping concentration of 1.1 × 10-19cm-3while annealed TiW and TiC contacts are thepreferred contacts to p-type SiC. From long-term reliabilitytests at high temperature (500 ºC or 600 ºC) invacuum and oxidizing (20% O2/N2) ambient, TiW contacts with a platinum cappinglayer (Pt/Ti/TiW) had stable specific contact resistances for>300 hours.

Keywords: silicon carbide, Ohmic and Schottky contacts,co-evaporation, current-voltage, capacitance-voltagemeasurement, power devices, nano-particles, Schottky barrierheight lowering, and TLM structures.

Стилі APA, Harvard, Vancouver, ISO та ін.
7

Yue, Naili. "Planar Packaging and Electrical Characterization of High Temperature SiC Power Electronic Devices." Thesis, Virginia Tech, 2008. http://hdl.handle.net/10919/36278.

Повний текст джерела
Анотація:
This thesis examines the packaging of high-temperature SiC power electronic devices. Current-voltage measurements were conducted on as-received and packaged SiC power devices. The planar structure was introduced and developed as a substitution for traditional wire-bonding vertical structure. The planar structure was applied to a high temperature (>250oC) SiC power device. Based on the current-voltage (I-V) measurements, the packaging structures were improved, materials were selected, and processes were tightly controlled. This study applies two types of planar structures, the direct bond and the bump bond, to the high-temperature packaging of high-temperature SiC diode. A drop in the reverse breakdown voltage was discovered in the packaging using a direct bond. The root cause for the drop in the breakdown voltage was identified and corrective solutions were evaluated. A few effective methods were suggested for solving the breakdown issue. The forward I-V curve of the planar packaging using direct bond showed excellent results due to the excellent electrical and thermal properties of sintered nanosilver. The packaging using a bump bond as an improved structure was processed and proved to possess desirable forward and reverse I-V behavior. The cross-sections of both planar structures were inspected. High-temperature packaging materials, including nano-silver paste, high-lead solder ball and paste, adhesive epoxy, and encapsulant, were introduced and evaluated. The processes such as stencil printing, low-temperature sintering, solder reflowing, epoxy curing, sputtering deposition, electroplating, and patterning of direct-bond copper (DBC) were tightly controlled to ensure high-quality packaging with improved performance. Finally, the planar packaging of the high temperature power device was evaluated and summarized, and the future work was recommended.
Master of Science
Стилі APA, Harvard, Vancouver, ISO та ін.
8

Sekar, Saalini Valli. "Nonlinear device characterization and second harmonic impedance tuning to achieve peak performance for a SiC power MESFET device at 2GHz." [Ames, Iowa : Iowa State University], 2008.

Знайти повний текст джерела
Стилі APA, Harvard, Vancouver, ISO та ін.
9

Watt, Grace R. "Impact of Device Parametric Tolerances on Current Sharing Behavior of a SiC Half-Bridge Power Module." Thesis, Virginia Tech, 2020. http://hdl.handle.net/10919/96559.

Повний текст джерела
Анотація:
This paper describes the design, fabrication, and testing of a 1.2 kV, 6.5 mΩ, half-bridge, SiC MOSFET power module to evaluate the impact of parametric device tolerances on electrical and thermal performance. Paralleling power devices increases current handling capability for the same bus voltage. However, inherent parametric differences among dies leads to unbalanced current sharing causing overstress and overheating. In this design, a symmetrical DBC layout is utilized to balance parasitic inductances in the current pathways of paralleled dies to isolate the impact of parametric tolerances. In addition, the paper investigates the benefits of flexible PCB in place of wire bonds for the gate loop interconnection to reduce and minimize the gate loop inductance. The balanced modules have dies with similar threshold voltages while the unbalanced modules have dies with unbalanced threshold voltages to force unbalanced current sharing. The modules were placed into a clamped inductive DPT and a continuous, boost converter. Rogowski coils looped under the wire bonds of the bottom switch dies to observe current behavior. Four modules performed continuously for least 10 minutes at 200 V, 37.6 A input, at 30 kHz with 50% duty cycle. The modules could not perform for multiple minutes at 250 V with 47.7 A (23 A/die). The energy loss differential for a ~17% difference in threshold voltage ranged from 4.52% (~10 µJ) to -30.9% (~30 µJ). The energy loss differential for a ~0.5% difference in V_th ranged from -2.26% (~8 µJ) to 5.66% (~10 µJ). The loss differential was dependent on whether current unbalance due to on-state resistance compensated current unbalance due to threshold voltage. While device parametric tolerances are inherent, if the higher threshold voltage devices can be paired with devices that have higher on-state resistance, the overall loss differential may perform similarly to well-matched dies. Lastly, the most consistently performing unbalanced module with 17.7% difference in V_th had 119.9 µJ more energy loss and was 22.2°C hotter during continuous testing than the most consistently performing balanced module with 0.6% difference inV_th.
Master of Science
This paper describes the design, construction, and testing of advanced power devices for use in electric vehicles. Power devices are necessary to supply electricity to different parts of the vehicle; for example, energy is stored in a battery as direct current (DC) power, but the motor requires alternating current (AC) power. Therefore, power electronics can alter the energy to be delivered as DC or AC. In order to carry more power, multiple devices can be used together just as 10 people can carry more weight than 1 person. However, because the devices are not perfect, there can be slight differences in the performance of one device to another. One device may have to carry more current than another device which could cause failure earlier than intended. In this research project, multiple power devices were placed into a package, or "module." In a control module, the devices were selected with similar properties to one another. In an experimental module, the devices were selected with properties very different from one another. It was determined that the when the devices were 17.7% difference, there was 119.9 µJ more energy loss and it was 22.2°C hotter than when the difference was only 0.6%. However, the severity of the difference was dependent on how multiple device characteristics interacted with one another. It may be possible to compensate some of the impact of device differences in one characteristic with opposing differences in another device characteristic.
Стилі APA, Harvard, Vancouver, ISO та ін.
10

BHADRI, PRASHANT R. "IMPLEMENTATION OF A SILICON CONTROL CHIP FOR Si/SiC HYBRID OPTICALLY ACTIVATED HIGH POWER SWITCHING DEVICE." University of Cincinnati / OhioLINK, 2002. http://rave.ohiolink.edu/etdc/view?acc_num=ucin1021402169.

Повний текст джерела
Стилі APA, Harvard, Vancouver, ISO та ін.
Більше джерел

Книги з теми "SiC power device"

1

Chuan, Feng Zhe, ed. SiC power materials: Devices and applications. Berlin: Springer, 2004.

Знайти повний текст джерела
Стилі APA, Harvard, Vancouver, ISO та ін.
2

I, Haddad George, Mains R. K, and United States. National Aeronautics and Space Administration, eds. Microwave and millimeter-wave power generation in silicon carbide (SiC) IMPATT devices. [Washington, DC: National Aeronautics and Space Administration, 1989.

Знайти повний текст джерела
Стилі APA, Harvard, Vancouver, ISO та ін.
3

I, Haddad G., Mains R. K, and United States. National Aeronautics and Space Administration., eds. Microwave and millimeter-wave power generation in silicon carbide (SiC) IMPATT devices. [Washington, DC: National Aeronautics and Space Administration, 1989.

Знайти повний текст джерела
Стилі APA, Harvard, Vancouver, ISO та ін.
4

Barack, Obama, and United States. Congress. House. Committee on Foreign Affairs, eds. Certification for an export to the People's Republic of China: Message from the President of the United States transmitting certification that the export of one continuous mixer to be used to manufacture conductive polymer compounds to be further processed to make circuit protection devices, one jet mill to be used for particle size reduction of pigments and other powder products for cosmetic formulations, and one filament winding cell to be used to manufacture fiberglass assembly shelter poles for use in tents and shelters is not detrimental to the U.S. space launch industry and will not measurably improve the missile or space launch capabilities of the People's Republic of China, pursuant to Pub. L. 105-261, sec. 1512. Washington: U.S. G.P.O., 2009.

Знайти повний текст джерела
Стилі APA, Harvard, Vancouver, ISO та ін.
5

Feng, Zhe C. SiC Power Materials and Devices. Springer, 2004.

Знайти повний текст джерела
Стилі APA, Harvard, Vancouver, ISO та ін.
6

Feng, Zhe Chuan. SiC Power Materials: Devices and Applications. 2004.

Знайти повний текст джерела
Стилі APA, Harvard, Vancouver, ISO та ін.
7

Feng, Zhe Chuan. SiC Power Materials: Devices and Applications. Springer Berlin Heidelberg, 2010.

Знайти повний текст джерела
Стилі APA, Harvard, Vancouver, ISO та ін.
8

Microwave and millimeter-wave power generation in silicon carbide (SiC) IMPATT devices. [Washington, DC: National Aeronautics and Space Administration, 1989.

Знайти повний текст джерела
Стилі APA, Harvard, Vancouver, ISO та ін.
9

Microwave and millimeter-wave power generation in silicon carbide (SiC) IMPATT devices. [Washington, DC: National Aeronautics and Space Administration, 1989.

Знайти повний текст джерела
Стилі APA, Harvard, Vancouver, ISO та ін.
10

Bayne, Stephen, and Bejoy Pushpakaran. Modeling and Electrothermal Simulation of SiC Power Devices: Using Silvaco© ATLAS. World Scientific Publishing Co Pte Ltd, 2019.

Знайти повний текст джерела
Стилі APA, Harvard, Vancouver, ISO та ін.
Більше джерел

Частини книг з теми "SiC power device"

1

Baliga, B. Jayant. "SiC Planar MOSFET Structures." In Advanced High Voltage Power Device Concepts, 235–92. New York, NY: Springer New York, 2011. http://dx.doi.org/10.1007/978-1-4614-0269-5_6.

Повний текст джерела
Стилі APA, Harvard, Vancouver, ISO та ін.
2

Agarwal, A., S. H. Ryu, and J. Palmour. "Power MOSFETs in 4H-SiC: Device Design and Technology." In Silicon Carbide, 785–811. Berlin, Heidelberg: Springer Berlin Heidelberg, 2004. http://dx.doi.org/10.1007/978-3-642-18870-1_33.

Повний текст джерела
Стилі APA, Harvard, Vancouver, ISO та ін.
3

Zhang, Jie, Esteban Romano, Janice Mazzola, Swapna G. Sunkari, Carl Hoff, Igor Sankin, and Michael S. Mazzola. "High Quality Uniform SiC Epitaxy for Power Device Applications." In Materials Science Forum, 101–4. Stafa: Trans Tech Publications Ltd., 2007. http://dx.doi.org/10.4028/0-87849-442-1.101.

Повний текст джерела
Стилі APA, Harvard, Vancouver, ISO та ін.
4

Jennings, M. R., C. A. Fisher, S. M. Thomas, Y. Sharma, D. Walker, A. Sanchez, A. Pérez-Tomás, et al. "Physical and Electrical Characterisation of 3C-SiC and 4H-SiC for Power Semiconductor Device Applications." In Physics of Semiconductor Devices, 929–32. Cham: Springer International Publishing, 2014. http://dx.doi.org/10.1007/978-3-319-03002-9_240.

Повний текст джерела
Стилі APA, Harvard, Vancouver, ISO та ін.
5

Johnson, R. Wayne, and John R. Williams. "SiC Power Device Packaging Technologies for 300 to 350°C Applications." In Materials Science Forum, 785–90. Stafa: Trans Tech Publications Ltd., 2005. http://dx.doi.org/10.4028/0-87849-963-6.785.

Повний текст джерела
Стилі APA, Harvard, Vancouver, ISO та ін.
6

Sui, Yang, Ginger G. Walden, Xiao Kun Wang, and James A. Cooper. "Device Options and Design Considerations for High-Voltage (10-20 kV) SiC Power Switching Devices." In Silicon Carbide and Related Materials 2005, 1449–52. Stafa: Trans Tech Publications Ltd., 2006. http://dx.doi.org/10.4028/0-87849-425-1.1449.

Повний текст джерела
Стилі APA, Harvard, Vancouver, ISO та ін.
7

Zekentes, Konstantinos, Victor Veliadis, Sei-Hyung Ryu, Konstantin Vasilevskiy, Spyridon Pavlidis, Arash Salemi, and Yuhao Zhang. "SiC and GaN Power Devices." In More-than-Moore Devices and Integration for Semiconductors, 47–104. Cham: Springer International Publishing, 2023. http://dx.doi.org/10.1007/978-3-031-21610-7_2.

Повний текст джерела
Стилі APA, Harvard, Vancouver, ISO та ін.
8

Luo, Z., T. Chen, D. C. Sheridan, and J. D. Cressler. "4H-SiC Power-Switching Devices for Extreme-Environment Applications." In SiC Power Materials, 375–409. Berlin, Heidelberg: Springer Berlin Heidelberg, 2004. http://dx.doi.org/10.1007/978-3-662-09877-6_10.

Повний текст джерела
Стилі APA, Harvard, Vancouver, ISO та ін.
9

Baliga, B. J. "Impact of SiC on Power Devices." In Springer Proceedings in Physics, 305–13. Berlin, Heidelberg: Springer Berlin Heidelberg, 1992. http://dx.doi.org/10.1007/978-3-642-84804-9_44.

Повний текст джерела
Стилі APA, Harvard, Vancouver, ISO та ін.
10

Tournier, Dominique, Miquel Vellvehi, Phillippe Godignon, Josep Montserrat, Dominique Planson, and F. Sarrus. "Current Sensing for SiC Power Devices." In Silicon Carbide and Related Materials 2005, 1215–18. Stafa: Trans Tech Publications Ltd., 2006. http://dx.doi.org/10.4028/0-87849-425-1.1215.

Повний текст джерела
Стилі APA, Harvard, Vancouver, ISO та ін.

Тези доповідей конференцій з теми "SiC power device"

1

Gajewski, Donald A., Brett Hull, Daniel J. Lichtenwalner, Sei-Hyung Ryu, Eric Bonelli, Habib Mustain, Gangyao Wang, Scott T. Allen, and John W. Palmour. "SiC power device reliability." In 2016 IEEE International Integrated Reliability Workshop (IIRW). IEEE, 2016. http://dx.doi.org/10.1109/iirw.2016.7904895.

Повний текст джерела
Стилі APA, Harvard, Vancouver, ISO та ін.
2

Funaki, Tsuyoshi. "Packaging for SiC power device." In 2014 International Power Electronics Conference (IPEC-Hiroshima 2014 ECCE-ASIA). IEEE, 2014. http://dx.doi.org/10.1109/ipec.2014.6869849.

Повний текст джерела
Стилі APA, Harvard, Vancouver, ISO та ін.
3

Veliadis, V. "SiC Power Device Mass Commercialization." In ESSDERC 2022 - IEEE 52nd European Solid-State Device Research Conference (ESSDERC). IEEE, 2022. http://dx.doi.org/10.1109/essderc55479.2022.9947113.

Повний текст джерела
Стилі APA, Harvard, Vancouver, ISO та ін.
4

Stahbush, R. E., and N. A. Mahadik. "Defects affecting SiC power device reliability." In 2018 IEEE International Reliability Physics Symposium (IRPS). IEEE, 2018. http://dx.doi.org/10.1109/irps.2018.8353546.

Повний текст джерела
Стилі APA, Harvard, Vancouver, ISO та ін.
5

Matocha, Kevin. "Challenges in SiC power MOSFET design." In 2007 International Semiconductor Device Research Symposium. IEEE, 2007. http://dx.doi.org/10.1109/isdrs.2007.4422412.

Повний текст джерела
Стилі APA, Harvard, Vancouver, ISO та ін.
6

Rowden, Brian, Alan Mantooth, Simon Ang, Alex Lostetter, Jared Hornberger, and Brice McPherson. "High Temperature SiC Power Module Packaging." In ASME 2009 International Mechanical Engineering Congress and Exposition. ASMEDC, 2009. http://dx.doi.org/10.1115/imece2009-12883.

Повний текст джерела
Анотація:
Wide band gap semiconductors such as silicon carbide (SiC) provide the potential for significant advantages over traditional silicon alternatives including operation at high temperatures for extreme environments and applications, higher voltages reducing the number of devices required for high power applications, and higher switching frequencies to reduce the size of passive elements in the circuit and system. All of these attributes contribute to increased power density at the device and system levels, but the ability to exploit these properties requires complementary high temperature packaging techniques and materials to connect these semiconductors to the system around them. With increasing temperature, the balance of thermal, mechanical, and electrical properties for these packaging materials becomes critical to ensure low thermal impedance, high reliability, and minimal electrical losses. A primary requirement for module operation at high temperatures is a suitable high temperature attachment technology at both the device and module levels. This paper presents a transient liquid phase (TLP) attachment method implemented to provide lead-free bonding for a SiC half-bridge power module. This module was designed for continuous operation above 250 °C for use as a building block for multiple system level applications including hybrid electric vehicles, distributed energy resources, and multilevel converters. A silver-based TLP system was used to accommodate the device and substrate bond with a single TLP system compatible with the device metallurgy. A SiC power module was built using this system and electrically tested at a 250 °C continuous junction temperature. The TLP bonding process was demonstrated for multiple devices in parallel and large substrate bonding surfaces with traditional device and substrate metallization and no requirements for surface planarization or treatment. The results are presented in the paper.
Стилі APA, Harvard, Vancouver, ISO та ін.
7

Hull, Brett A., Fatima Husna, Anant Agarwal, Aivars Lelis, Bruce Geil, Charles Scozzie, Mrinal K. Das, et al. "Status of 1200V 4H-SiC Power DMOSFETs." In International Semiconductor Device Research Symposium. IEEE, 2007. http://dx.doi.org/10.1109/isdrs.2007.4422413.

Повний текст джерела
Стилі APA, Harvard, Vancouver, ISO та ін.
8

Agarwal, Anant. "Technical challenges in commercial SiC power MOSFETs." In 2007 International Semiconductor Device Research Symposium. IEEE, 2007. http://dx.doi.org/10.1109/isdrs.2007.4422481.

Повний текст джерела
Стилі APA, Harvard, Vancouver, ISO та ін.
9

Lauenstein, Jean-Marie, Megan C. Casey, Ray L. Ladbury, Hak S. Kim, Anthony M. Phan, and Alyson D. Topper. "Space Radiation Effects on SiC Power Device Reliability." In 2021 IEEE International Reliability Physics Symposium (IRPS). IEEE, 2021. http://dx.doi.org/10.1109/irps46558.2021.9405180.

Повний текст джерела
Стилі APA, Harvard, Vancouver, ISO та ін.
10

Xu, Jiale, Lei Gu, Zhechi Ye, Saleh Kargarrazi, and Juan Rivas-Davila. "Cascode GaN/SiC Power Device for MHz Switching." In 2019 IEEE Applied Power Electronics Conference and Exposition (APEC). IEEE, 2019. http://dx.doi.org/10.1109/apec.2019.8721931.

Повний текст джерела
Стилі APA, Harvard, Vancouver, ISO та ін.

Звіти організацій з теми "SiC power device"

1

Sung, YunMo, and Michael S. Mazzola. Development of High-Temperature, High-Power, High-Efficiency, High-Voltage Converters Using Silicon Carbide (SiC) Delivery Order Delivery Order 0002: Critical Analysis of SiC VJFET Design and Performance Based Upon Material and Device Properties. Fort Belvoir, VA: Defense Technical Information Center, August 2005. http://dx.doi.org/10.21236/ada443645.

Повний текст джерела
Стилі APA, Harvard, Vancouver, ISO та ін.
2

Baliga, B. J., B. Vijay, P. M. Shenoy, R. F. Davis, and H. S. Tomozawa. SiC Discrete Power Devices. Fort Belvoir, VA: Defense Technical Information Center, January 1997. http://dx.doi.org/10.21236/ada319706.

Повний текст джерела
Стилі APA, Harvard, Vancouver, ISO та ін.
3

Baliga, B. J., R. K. Chilukuri, P. M. Shenoy, B. Vijay, and R. F. Davis. SiC Discrete Power Devices. Fort Belvoir, VA: Defense Technical Information Center, January 1999. http://dx.doi.org/10.21236/ada358651.

Повний текст джерела
Стилі APA, Harvard, Vancouver, ISO та ін.
4

Chilukuri, Ravi K., and B. J. Baliga. SiC Discrete Power Devices. Fort Belvoir, VA: Defense Technical Information Center, January 2001. http://dx.doi.org/10.21236/ada389252.

Повний текст джерела
Стилі APA, Harvard, Vancouver, ISO та ін.
5

Cooper, James A., Michael A. Capano, Leonard C. Feldman, Marek Skowronski, and John R. Williams. Development of Process Technologies for High-Performance MOS-Based SiC Power Switching Devices. Fort Belvoir, VA: Defense Technical Information Center, August 2007. http://dx.doi.org/10.21236/ada473280.

Повний текст джерела
Стилі APA, Harvard, Vancouver, ISO та ін.
6

Baker, Bryant. A 3.6 GHz Doherty Power Amplifier with a 40 dBm Saturated Output Power using GaN on SiC HEMT Devices. Portland State University Library, January 2000. http://dx.doi.org/10.15760/etd.1780.

Повний текст джерела
Стилі APA, Harvard, Vancouver, ISO та ін.
7

Weinschenk, Craig, Daniel Madrzykowski, and Paul Courtney. Impact of Flashover Fire Conditions on Exposed Energized Electrical Cords and Cables. UL Firefighter Safety Research Institute, October 2019. http://dx.doi.org/10.54206/102376/hdmn5904.

Повний текст джерела
Анотація:
A set of experiments was conducted to expose different types of energized electrical cords for lamps, office equipment, and appliances to a developing room fire exposure. All of the cords were positioned on the floor and arranged in a manner to receive a similar thermal exposure. Six types of cords commonly used as power supply cords, extension cords, and as part of residential electrical wiring systems were chosen for the experiments. The non-metallic sheathed cables (NMB) typically found in residential electrical branch wiring were included to provide a link to previous research. The basic test design was to expose the six different types of cords, on the floor of a compartment to a growing fire to determine the conditions under which the cord would trip the circuit breaker and/or undergo an arc fault. All of the cords would be energized and installed on a non-combustible surface. Six cord types (18-2 SPT1, 16-3 SJTW, 12-2 NM-B, 12-3 NM-B, 18-3 SVT, 18-2 NISPT-2) and three types of circuit protection (Molded case circuit breaker (MCCB), combination Arc-fault circuit interrupter (AFCI), Ground-fault circuit interrupter (GFCI)) were exposed to six room-scale fires. The circuit protection was remote from the thermal exposure. The six room fires consisted of three replicate fires with two sofas as the main fuel source, two replicate fires with one sofa as the main fuel source and one fire with two sofas and MDF paneling on three walls in the room. Each fuel package was sufficient to support flashover conditions in the room and as a result, the impact on the cords and circuit protection was not significantly different. The average peak heat release rate of the sofa fueled compartment fires with gypsum board ceiling and walls was 6.8 MW. The addition of vinyl covered MDF wall paneling on three of the compartment walls increased the peak heat release rate to 12 MW, although most of the increased energy release occurred outside of the compartment opening. In each experiment during post flashover exposure, the insulation on the cords ignited and burned through, exposing bare conductor. During this period the circuits faulted. The circuit protection devices are not designed to provide thermal protection, and, thus, were installed remote from the fire. The devices operated as designed in all experiments. All of the circuit faults resulted in either a magnetic trip of the conventional circuit breaker or a ground-fault trip in the GFCI or AFCI capable circuit protection devices. Though not required by UL 1699, Standard for Safety for Arc-Fault Circuit-Interrupters as the solution for detection methodology, the AFCIs used had differential current detection. Examination of signal data showed that the only cord types that tripped with a fault to ground were the insulated conductors in non-metallic sheathed cables (12-2 NM-B and 12-3 NM-B). This was expected due to the bare grounding conductor present. Assessments of both the thermal exposure and physical damage to the cords did not reveal any correlation between the thermal exposure, cord damage, and trip type.
Стилі APA, Harvard, Vancouver, ISO та ін.
Також вас можуть зацікавити розширені добірки на тему "SiC power device" для конкретних типів джерел:
Статті в журналах Дисертації Книги
Ми пропонуємо знижки на всі преміум-плани для авторів, чиї праці увійшли до тематичних добірок літератури. Зв'яжіться з нами, щоб отримати унікальний промокод!

До бібліографії