Добірка наукової літератури з теми "Si and Ge nanostructures"
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Статті в журналах з теми "Si and Ge nanostructures"
Brunner, Karl. "Si/Ge nanostructures." Reports on Progress in Physics 65, no. 1 (December 19, 2001): 27–72. http://dx.doi.org/10.1088/0034-4885/65/1/202.
Повний текст джерелаZaumseil, Peter, Yuji Yamamoto, Markus Andreas Schubert, Thomas Schroeder, and Bernd Tillack. "Reduction of Structural Defects in Ge Epitaxially Grown on Nano-Structured Si Islands on SOI Substrate." Solid State Phenomena 205-206 (October 2013): 400–405. http://dx.doi.org/10.4028/www.scientific.net/ssp.205-206.400.
Повний текст джерелаEgorov, V. A., G. É. Cirlin, A. A. Tonkikh, V. G. Talalaev, A. G. Makarov, N. N. Ledentsov, V. M. Ustinov, N. D. Zakharov, and P. Werner. "Si/Ge nanostructures for optoelectronics applications." Physics of the Solid State 46, no. 1 (January 2004): 49–55. http://dx.doi.org/10.1134/1.1641919.
Повний текст джерелаStoica, T., and E. Sutter. "Ge dots embedded in SiO2obtained by oxidation of Si/Ge/Si nanostructures." Nanotechnology 17, no. 19 (September 11, 2006): 4912–16. http://dx.doi.org/10.1088/0957-4484/17/19/022.
Повний текст джерелаDouhan, Rahaf, Kirill Lozovoy, Andrey Kokhanenko, Hazem Deeb, Vladimir Dirko, and Kristina Khomyakova. "Recent Advances in Si-Compatible Nanostructured Photodetectors." Technologies 11, no. 1 (January 24, 2023): 17. http://dx.doi.org/10.3390/technologies11010017.
Повний текст джерелаBarbagiovanni, E. G., D. J. Lockwood, P. J. Simpson, and L. V. Goncharova. "Quantum confinement in Si and Ge nanostructures." Journal of Applied Physics 111, no. 3 (February 2012): 034307. http://dx.doi.org/10.1063/1.3680884.
Повний текст джерелаMoutanabbir, O., S. Miyamoto, A. Fujimoto, and K. M. Itoh. "Isotopically controlled self-assembled Ge/Si nanostructures." Journal of Crystal Growth 301-302 (April 2007): 324–29. http://dx.doi.org/10.1016/j.jcrysgro.2006.11.178.
Повний текст джерелаWang, Ye-Liang, Hai-Ming Guo, Zhi-Hui Qin, Hai-Feng Ma, and Hong-Jun Gao. "Toward a Detailed Understanding of Si(111)-7×7Surface and Adsorbed Ge Nanostructures: Fabrications, Structures, and Calculations." Journal of Nanomaterials 2008 (2008): 1–18. http://dx.doi.org/10.1155/2008/874213.
Повний текст джерелаTang, Y. S., C. M. Sotomayor Torres, T. E. Whall, E. H. C. Parker, H. Presting, and H. Kibbel. "Optical properties of Si-Si1−xGex and Si-Ge nanostructures." Journal of Materials Science: Materials in Electronics 6, no. 5 (October 1995): 356–62. http://dx.doi.org/10.1007/bf00125892.
Повний текст джерелаЛапин, Вячеслав Анатольевич, Александр Александрович Кравцов, Дмитрий Сергеевич Кулешов, and Федор Федорович Малявин. "INVESTIGATION OF POSSIBILITY OF THE MISFIT DISLOCATION DENSITY REDUCTION IN GE / SI FILMS WITH A BUFFER LAYER." Physical and Chemical Aspects of the Study of Clusters, Nanostructures and Nanomaterials, no. 13 (December 23, 2021): 263–71. http://dx.doi.org/10.26456/pcascnn/2021.13.263.
Повний текст джерелаДисертації з теми "Si and Ge nanostructures"
Gadea, Gerard. "Integration of Si/Si-Ge nanostructures in micro-thermoelectric generators." Doctoral thesis, Universitat de Barcelona, 2017. http://hdl.handle.net/10803/459243.
Повний текст джерелаLos materiales termoeléctricos permiten la conversión de calor a electricidad y viceversa. Esto permite explotar el efecto termoeléctrico en generadores termoeléctricos, capaces de extraer energía térmica de fuentes calientes y convertirla a electricidad útil. Estos generadores presentan grandes ventajas, como su falta de piezas móviles – y por ende necesidad de mantenimiento alguna – y su total escalabilidad, que permite cambiar su tamaño sin afectar su rendimiento. Esto los hace obvios candidatos para la alimentación y carga de dispositivos portátiles y situados lugares de difícil acceso. A pesar de ello, su uso no está muy extendido debido a que su relación eficiencia-coste es baja en comparación a otros métodos capaces de suplir las funciones de alimentación – como la sustitución periódica de baterías – o de conversión térmica-eléctrica – como las turbinas de vapor. Los materiales termoeléctricos suelen ser o eficientes y caros (como el Bi2Te3 usado en los módulos comerciales) o ineficientes y de bajo coste (como el silicio, barato por su abundancia ya que supone un 28% de la corteza terrestre). En este trabajo se han crecido nanostructuras de silicio y silicio-germano, con dimensiones en el orden de los 100 nm. Los nanomateriales presentan propiedades termoeléctricas mejoradas respecto a sus contrapartes macroscópicas. Gracias a la nanoestructuración pues, se ha abordado del problema de eficiencia-coste por dos vertientes: • En el caso del silicio – normalmente un mal termoeléctrico debido a su alta conductividad térmica – se ha habilitado su uso como termoeléctrico al crecerlo en forma de nanohilos cristalinos y nanotubos de silicio policristalino. • En el caso de silicio-germano – que ya es un buen termoeléctrico para uso en altas temperaturas – se ha aumentado su eficiencia aún más, creciéndolo en forma de nanohilos. Yendo más allá de la síntesis, los nanohilos de silicio/silicio-germano se han optimizado, caracterizado en integrado en gran número micro-generadores termoeléctricos de 1 mm2 de superficie, pensados para la alimentación de pequeños dispositivos y circuitos integrados. Respecto a los nanotubos de Si, estos se han obtenido en densas fibras macroscópicas aptas para su aplicación directa como generadores termoeléctricos de gran área. Cabe mencionar que ambos nanomateriales – así como los microgeneradores basados en nanohilos – fueron obtenidos mediante técnicas actualmente utilizadas para la fabricación de circuitos integrados, pensando en la escalabilidad del proceso para su aplicación. El trabajo presentado en esta tesis consiste en el crecimiento, optimización, estudio e integración de nanostructuras de Si/Si-Ge para su aplicación en generación termoeléctrica. En los Capítulos 1 y 2 se pone un marco a los materiales tratados y su aplicación y se describen los métodos utilizados, respectivamente. Los resultados se han dividido en cuatro capítulos. En los Capítulos 3, 4 y 5 se tratan los nanohilos abordando su crecimiento, caracterización y aplicación en microgeneradores, respectivamente. En el Capítulo 6 se tratan las fibras de nanotubos, integrando todo el estudio en el mismo capítulo. Finalmente en el Capítulo 7 se muestran las conclusiones, resumiendo los resultados e indicando la relevancia del trabajo.
Elfving, Anders. "Near-infrared photodetectors based on Si/SiGe nanostructures." Doctoral thesis, Linköping : Surface and Semiconductor Physics, Linköping University, 2006. http://urn.kb.se/resolve?urn=urn:nbn:se:liu:diva-5909.
Повний текст джерелаPascale, Alina Mihaela. "Evolution morphologique des nanostructures Si(1-x)Ge(x) pendant la croissance par EJM." Aix-Marseille 2, 2003. https://tel.archives-ouvertes.fr/tel-00504903.
Повний текст джерелаIn this work we studied the Ge dots self-organization on vicinal Si substrates nanostructured by using a two stages process which consists of: i) substrate natural self-structuration and ii) Ge dots preferential nucleation on the created patterns. After bibliographical recalls in the first three chapters, we present the theoretical and experimental results in the two last chapters. In particular, we have evidenced: a) an implicit inverse Ehrlich-Schwoebel pseudo-barrier at the origin of the kinetic instability which develops during the homoepitaxial growth Si/Si(001), with scaling exponents in good agreement with the theory and b) an important reduction of the elastic energy of a system including a Ge dot, a Ge wetting layer and a Si patterned substrate (where each pattern is represented by steps) when the pattern is constitued of three steps at least
Portavoce, Alain. "Mécanismes élémentaires de redistribution de l'antimoine au cours de la croissance d'hétérostructure Si/Si(1-x)Ge(x) : Diffusion, ségrégation, désorption et effet surfactant." Aix-Marseille 3, 2002. http://www.theses.fr/2002AIX30060.
Повний текст джерелаThe future SiGe structures for micro and nano-electronic impose a strict doping control and for some of them a 3D confinement. We have analysed the dopant (B, Sb) redistribution phenomena during the MBE growth of SiGe layers in epitaxy on Si: diffusion, segregation, desorption, surfactant effect. Our approach (layers under various states of stress) permits to separate the Ge concentration effect from the strain effect. Sb diffusion increases with Ge concentration and with biaxial compression, while the B diffusion follows the opposite behaviour. We show that these variations are in agreement with a mechanism using principally vacancies for Sb and interstitials for B. Surface segregation during growth follows the same variations as diffusion, showing the prevalence of kinetics. The control of the superficial Sb coverage allows either the growth of thicker flat Ge layers or to reduce the size and to increase the density of Ge islands
Moontragoon, Pairot. "Band structure calculation of Si-Ge-Sn binary and ternary alloys, nanostructures and devices." Thesis, University of Leeds, 2009. http://etheses.whiterose.ac.uk/5850/.
Повний текст джерелаRuh, Elisabeth Margrit. "Investigation of the local Ge concentration in Si/SiGe nanostructures by convergent-beam electron diffraction /." Zürich : ETH, 2008. http://e-collection.ethbib.ethz.ch/show?type=diss&nr=17908.
Повний текст джерелаBohorquez, Ballen Jaime. "Thermal transport in low dimensional semiconductor nanostructures." OpenSIUC, 2014. https://opensiuc.lib.siu.edu/dissertations/798.
Повний текст джерелаKozlowski, Grzegorz [Verfasser], and Thomas [Akademischer Betreuer] Schröder. "On the compliant behaviour of free-standing Si nanostructures on Si(001) for Ge nanoheteroepitaxy / Grzegorz Kozlowski. Betreuer: Thomas Schröder." Cottbus : Universitätsbibliothek der BTU Cottbus, 2012. http://d-nb.info/1022561456/34.
Повний текст джерелаCariou, Romain. "Epitaxial growth of Si(Ge) materials on Si and GaAs by low temperature PECVD: towards tandem devices." Palaiseau, Ecole polytechnique, 2014. https://theses.hal.science/tel-01113794/document.
Повний текст джерелаThis thesis focuses on epitaxial growth of Si and SiGe at low temperature (200°C) by Plasma Enhanced Chemical Vapor Deposition (PECVD), and its application in thin film crystalline solar cells. Our goal is to gain insight into this unusual growth process, as well as to investigate the potential of such low temperaturedeposited material for single and multi-junction solar cells. First, we have proposed a one pump-down plasma process to clean out-of-the-box c-Si wafer surface and grow epitaxial layers of up to 8µm thick, without ultra-high vacuum, in a standard RF-PECVD reactor. By exploring the experimental parameters space, the link between layer quality and important physical variables, such as silane dilution, ion energy, or deposition pressure, has been confirmed. Both material and electrical properties were analyzed, and we found that epitaxial quality improves with film thickness. Furthermore, we could bring evidence of SiGe and Ge epitaxial growth under similar conditions. Then, with the whole process steps <200°C, we have achieved PIN heterojunction solar cells on highly doped substrates with 1-4µm epitaxial absorber, reaching 8. 8% efficiency (without light trapping) and 80. 5% FF. Replacing Si absorber by epitaxial Si0:73Ge0:27 resulted in 11% boost in Jsc. The use of an engineered wafer/epitaxial layer interface and stress enables easy lift-off: e. G. We successfully bonded 1. 5µm thick 10cm^2 epi-Si to glass. Additionally, we have considered the impact of photonic nanostructures on device properties. Together, the control of growth, transfer and advanced light trapping are paving the way toward highly efficient, ultrathin (<10µm) and low cost c-Si cells. Finally, in contrast with general trend of growing III-V semiconductors on Si, we have studied the hetero-epitaxial growth of Si on III-V. Good crystal quality was achieved by direct Si deposition on GaAs, thanks to reduced thermal load and suppressed polarity issues in this approach. Using MOCVD, we could build GaAs cells with 20% efficiency and III-V tunnel junctions reaching 55A/cm^2. Tunneling improvement upon H-plasma exposure was shown. Those results, combined with III-V layer lift-off, validate milestones toward high efficiency tandem AlGaAs(MOVD)/SiGe(PECVD) metamorphic solar cells
Lin, Zhen. "AFM electrical mode development for nanostructure semiconductor study : application on Ge / Si nanostructure." Lyon, INSA, 2010. http://theses.insa-lyon.fr/publication/2010ISAL0135/these.pdf.
Повний текст джерелаNowadays, the semiconductor technology is facing a great challenge to increase the device performance while reducing its dimension. This downscaling in microelectronics industry causes a drastic development of microscopy to reveal new physical characteristics at nanoscale. The understanding of these new properties in nanometer scale is of prime importance. In this work, the AFM fundamental working principle and some typical electric property characterization techniques in semiconductor industry were introduced. The electrical AFM modes including scanning capacitance microscopy (SCM) and spectroscopy (SCS), electrostatic force microscopy (EFM) and Kelvin probe force microscopy (KPFM) were developed at room temperature to study the properties of the promising replacement of the conventional poly-silicon floating gate, Germanium nanocrystals local Ge/Si nanostructures, which were fabricated by dewetting process. SCM, SCS, EFM and KPFM were proved to be available methodologies for semiconductor nanostructures characterizations, especially the nanocrystal study in nanometer scale. These characterisation works with developed AFM electrical mode are of prime importance in developing electronic devices application, especially the memory transistors application using Ge/Si nanocrystal
Книги з теми "Si and Ge nanostructures"
Zheng, Yuan. Shi si ge ge. Hong Kong: Xing He, 2000.
Знайти повний текст джерелаYukio, Mishima. Jin ge si. Taibei Shi: Hua cheng tu shu, 2001.
Знайти повний текст джерелаHui, Chen. Si ji ge. Xianggang: Tian di tu shu you xian gong si, 2000.
Знайти повний текст джерелаYukio, Mishima. Jin ge si. 7th ed. Taibei Shi: Da di chu ban she, 2000.
Знайти повний текст джерелаTang yue mei, 1931- ), ed. Jin ge si. Bei jing: Jiu zhou chu ban she, 2015.
Знайти повний текст джерелаte, Bo lang, and Xue hong shi. A ge ni si · ge lei. Nan jing: Yi lin chu ban she, 1999.
Знайти повний текст джерелаWu, Dao Zi. Si mian chu ge. Hong Kong: Huan Qiu, 1990.
Знайти повний текст джерелаwen, Lai, and Yu er yan. Sheng si zhi ge. Bei jing: Dong fang chu ban she, 1998.
Знайти повний текст джерелаSi wang fu ge. Xianggang: Tian di tu shu you xian gong si, 2013.
Знайти повний текст джерелаLing, Wang, ed. Si lu zhi ge. Taibei Shi: San min shu ju gu fen you xian gong si, 2013.
Знайти повний текст джерелаЧастини книг з теми "Si and Ge nanostructures"
Cirlin, G. E., V. G. Talalaev, N. D. Zakharov, and P. Werner. "Si/Ge Nanostructures For Led." In Towards the First Silicon Laser, 79–88. Dordrecht: Springer Netherlands, 2003. http://dx.doi.org/10.1007/978-94-010-0149-6_9.
Повний текст джерелаKawamura, T., T. Yokotsuka, and M. R. Wilby. "Comparative Study of Homoepitaxial Growths on Si(001) and Ge(111)." In Nanostructures and Quantum Effects, 298–308. Berlin, Heidelberg: Springer Berlin Heidelberg, 1994. http://dx.doi.org/10.1007/978-3-642-79232-8_42.
Повний текст джерелаRosei, F., N. Motta, A. Sgarlata, and A. Balzarotti. "Growth and Characterization of Ge Nanostructures on Si(111)." In Nanoscale Spectroscopy and Its Applications to Semiconductor Research, 252–62. Berlin, Heidelberg: Springer Berlin Heidelberg, 2002. http://dx.doi.org/10.1007/3-540-45850-6_22.
Повний текст джерелаPersichetti, L., A. Capasso, A. Sgarlata, M. Fanfoni, N. Motta, and A. Balzarotti. "Towards a Controlled Growth of Self-assembled Nanostructures: Shaping, Ordering, and Localization in Ge/Si Heteroepitaxy." In Self-Assembly of Nanostructures, 201–63. New York, NY: Springer New York, 2011. http://dx.doi.org/10.1007/978-1-4614-0742-3_4.
Повний текст джерелаFujimoto, Yoshitaka. "Formation, Growth Mechanism and Electronic Structures of Ge Films on Si Substrates." In Two-Dimensional Nanostructures for Energy-Related Applications, 377–400. Boca Raton, FL : CRC Press, [2016] | “A science publishers book.”: CRC Press, 2017. http://dx.doi.org/10.1201/9781315369877-13.
Повний текст джерелаFujimoto, Yoshitaka. "Formation, Growth Mechanism and Electronic Structures of Ge Films on Si Substrates." In Two-Dimensional Nanostructures for Energy-Related Applications, 377–400. Taylor & Francis Group, 6000 Broken Sound Parkway NW, Suite 300, Boca Raton, FL 33487-2742: CRC Press, 2016. http://dx.doi.org/10.1201/9781315369877-14.
Повний текст джерелаNauka, K., and T. I. Kamins. "Modification of the Si surface electronic properties by Ge nanostructures: Surface photovoltage studies." In Springer Proceedings in Physics, 305–6. Berlin, Heidelberg: Springer Berlin Heidelberg, 2001. http://dx.doi.org/10.1007/978-3-642-59484-7_140.
Повний текст джерелаGuo, Haiming, Yeliang Wang, and Hongjun Gao. "Scanning Tunneling Microscopy of the Si(111)-7×7 Surface and Adsorbed Ge Nanostructures." In Applied Scanning Probe Methods XII, 183–220. Berlin, Heidelberg: Springer Berlin Heidelberg, 2009. http://dx.doi.org/10.1007/978-3-540-85039-7_9.
Повний текст джерелаLiu, Jifeng. "Ge-on-Si Lasers." In Photonics and Electronics with Germanium, 267–309. Weinheim, Germany: Wiley-VCH Verlag GmbH & Co. KGaA, 2015. http://dx.doi.org/10.1002/9783527650200.ch12.
Повний текст джерелаCarow-Watamura, U., D. V. Louzguine, and A. Takeuchi. "Ge-Nb-Si (281)." In Physical Properties of Ternary Amorphous Alloys. Part 3: Systems from Cr-Fe-P to Si-W-Zr, 256. Berlin, Heidelberg: Springer Berlin Heidelberg, 2011. http://dx.doi.org/10.1007/978-3-642-14133-1_75.
Повний текст джерелаТези доповідей конференцій з теми "Si and Ge nanostructures"
SOBOLEV, N. A. "RADIATION EFFECTS IN Si/Ge NANOSTRUCTURES." In Reviews and Short Notes to Nanomeeting '97. WORLD SCIENTIFIC, 1997. http://dx.doi.org/10.1142/9789814503938_0005.
Повний текст джерелаJi, Pengfei, Yiming Rong, Yuwen Zhang, and Yong Tang. "Heat Conduction in Si/Ge Superlattices: A Molecular Dynamics Study." In ASME 2017 International Mechanical Engineering Congress and Exposition. American Society of Mechanical Engineers, 2017. http://dx.doi.org/10.1115/imece2017-70270.
Повний текст джерелаFRIGERI, C., L. NASI, M. SERÉNYI, A. CSIK, Z. ERDÉLY, and D. L. BEKE. "STRUCTURAL INSTABILITY OF ANNEALED a-Si/a-Ge NANOSTRUCTURES." In Proceedings of the International Conference on Nanomeeting 2009. WORLD SCIENTIFIC, 2009. http://dx.doi.org/10.1142/9789814280365_0019.
Повний текст джерелаGruetzmacher, Detlev A., Rainer Hartmann, Oliver Leifeld, Ulf Gennser, Christian David, Elizabeth Mueller, and Jan-Christoph Panitz. "Optical properties of Si-Ge-C nanostructures deposited by MBE." In Optoelectronics '99 - Integrated Optoelectronic Devices, edited by Derek C. Houghton and Eugene A. Fitzgerald. SPIE, 1999. http://dx.doi.org/10.1117/12.342787.
Повний текст джерелаBarbagiovanni, Eric G., David J. Lockwood, Raimundo N. Costa Filho, Lyudmila V. Goncharova, and Peter J. Simpson. "Quantum confinement in Si and Ge nanostructures: effect of crystallinity." In Photonics North 2013, edited by Pavel Cheben, Jens Schmid, Caroline Boudoux, Lawrence R. Chen, André Delâge, Siegfried Janz, Raman Kashyap, David J. Lockwood, Hans-Peter Loock, and Zetian Mi. SPIE, 2013. http://dx.doi.org/10.1117/12.2036323.
Повний текст джерелаPearsall, Thomas P. "Determination of electronic structure of Ge-Si nanostructures by electroreflectance spectroscopy." In Semi - DL tentative, edited by Fred H. Pollak, Manuel Cardona, and David E. Aspnes. SPIE, 1990. http://dx.doi.org/10.1117/12.20874.
Повний текст джерелаSOBOLEV, N. A., G. D. IVLEV, E. I. GATSKEVICH, D. N. SHARAEV, J. P. LEITÃO, A. FONSECA, M. C. CARMO, et al. "SELF-ORGANIZATION PHENOMENA IN PULSED LASER ANNEALED Si/Ge SUPERLATTICES." In Physics, Chemistry and Application of Nanostructures - Reviews and Short Notes to Nanomeeting 2003. WORLD SCIENTIFIC, 2003. http://dx.doi.org/10.1142/9789812796738_0114.
Повний текст джерелаChernozatonskii, L. A. "New inorganic nanotubes of dioxides MO2(M=Si, Ge, Sn)." In ELECTRONIC PROPERTIES OF NOVEL NANOSTRUCTURES: XIX International Winterschool/Euroconference on Electronic Properties of Novel Materials. AIP, 2005. http://dx.doi.org/10.1063/1.2103887.
Повний текст джерелаSamvedi, Vikas, and Vikas Tomar. "Role of Interface Thermal Boundary Resistance, Straining, and Morphology in Thermal Conductivity of a Set of Si-Ge Superlattices and Biomimetic Si-Ge Nanocomposites." In ASME 2011 Pacific Rim Technical Conference and Exhibition on Packaging and Integration of Electronic and Photonic Systems. ASMEDC, 2011. http://dx.doi.org/10.1115/ipack2011-52284.
Повний текст джерелаSamvedi, Vikas, and Vikas Tomar. "Role of Interface Thermal Boundary Resistance, Straining and Morphology in Thermal Conductivity of a Set of Si-Ge Superlattices and Biomimetic Si-Ge Nanocomposites." In ASME/JSME 2011 8th Thermal Engineering Joint Conference. ASMEDC, 2011. http://dx.doi.org/10.1115/ajtec2011-44644.
Повний текст джерелаЗвіти організацій з теми "Si and Ge nanostructures"
Sanchez-Vazquez, Mario, and Nancy Perez-Peralta. Theoretical Study of Si(x)Ge(y)Li(z)- (x=4-10, y=1-10, z=0-10) Clusters for Designing of Novel Nanostructured Materials to be Utilized as Anodes for Lithium-Ion Batteries. Fort Belvoir, VA: Defense Technical Information Center, March 2015. http://dx.doi.org/10.21236/ad1013217.
Повний текст джерелаShum, Kai. Hot Electron Ge/Si Lasers. Fort Belvoir, VA: Defense Technical Information Center, June 1997. http://dx.doi.org/10.21236/ada329725.
Повний текст джерелаWashburn, Sean. Quantum Transport in Si/SiGe Nanostructures. Fort Belvoir, VA: Defense Technical Information Center, January 1999. http://dx.doi.org/10.21236/ada395028.
Повний текст джерелаDinh, L. N. Synthesis, electronic and optical properties of Si nanostructures. Office of Scientific and Technical Information (OSTI), September 1996. http://dx.doi.org/10.2172/425299.
Повний текст джерелаBozhko, S. I., A. N. Chaika, and A. M. Ionov. Vicinal Si(hhm) surfaces: templates for nanostructures fabrication. Edited by Lotfia Elnai and Ramy Mawad. Journal of Modern trends in physics research, December 2014. http://dx.doi.org/10.19138/mtpr/(14)58-64.
Повний текст джерелаBlake, P., and R. O. Scattergood. Diamond turning of Si and Ge single crystals. Office of Scientific and Technical Information (OSTI), December 1988. http://dx.doi.org/10.2172/476637.
Повний текст джерелаAdamski, Joseph A., and John S. Bailey. Establish Methods for Crystal Growth of Si-Ge. Fort Belvoir, VA: Defense Technical Information Center, October 1997. http://dx.doi.org/10.21236/ada337685.
Повний текст джерелаKouvetakis, John, and J. Menendez. Next Generation, Si-Compatible Materials and Devices in the Si-Ge-Sn System. Fort Belvoir, VA: Defense Technical Information Center, October 2015. http://dx.doi.org/10.21236/ad1003360.
Повний текст джерелаWang, Kang L. Fundamental Properties and Device Applications of Ge(x)Si(1-x)/Si Superlattices. Fort Belvoir, VA: Defense Technical Information Center, February 1990. http://dx.doi.org/10.21236/ada236098.
Повний текст джерелаZAIDI, SALEEM H. Characterization of Si nanostructures using internal quantum efficiency measurements. Office of Scientific and Technical Information (OSTI), April 2000. http://dx.doi.org/10.2172/754397.
Повний текст джерела