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Добірка наукової літератури з теми "Semiconductors - Advance Device Applications"

Автор: Grafiati
Опубліковано: 7 вересня 2023

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Статті в журналах з теми "Semiconductors - Advance Device Applications"

1

Kizilyalli, Isik C., Olga Blum Spahn, and Eric P. Carlson. "(Invited) Recent Progress in Wide-Bandgap Semiconductor Devices for a More Electric Future." ECS Transactions 109, no. 8 (September 30, 2022): 3–12. http://dx.doi.org/10.1149/10908.0003ecst.

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Анотація:
Wide-bandgap (WBG) semiconductors, with their excellent electrical properties, offer breakthrough performance in power electronics enabling low losses, high switching frequencies, and high temperature operation. WBG semiconductors, such as silicon carbide and gallium nitride, are likely candidates to replace silicon in the near future for high power applications as silicon is fast approaching its performance limits. Wide-bandgap power semiconductor devices enable breakthrough circuit performance and energy efficiency gains in a wide range of potential applications. The U.S. Department of Energy’s Advanced Research Project Agency - Energy (ARPA-E) has invested in WBG semiconductors over the past ten years targeting the barriers to widespread adoption of WBGs in power electronics including material and device development. Under ARPA-E projects, medium voltage (10-20kV) WBG device development has commenced to push the voltage boundaries of WBGs. This includes super-junction devices and light triggered photoconductive devices for MV applications. The WBG MV devices will enable MVDC grid distribution applicable to markets including electrified transportation, renewable interconnections, and offshore oil, gas, and wind production. Advanced WBG device ideas are additionally being explored including 3D device structures, WBG integrated circuits, and neutron detectors The progress and challenges of the WBG devices being developed under ARPA-E programs will be reviewed along with thoughts on the future trends of WBG device development.
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2

Kizilyalli, Isik C., Olga Blum Spahn, and Eric P. Carlson. "(Invited) Recent Progress in Wide-Bandgap Semiconductor Devices for a More Electric Future." ECS Meeting Abstracts MA2022-02, no. 37 (October 9, 2022): 1344. http://dx.doi.org/10.1149/ma2022-02371344mtgabs.

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Анотація:
Wide-bandgap (WBG) semiconductors, with their excellent electrical properties, offer breakthrough performance in power electronics enabling low losses, high switching frequencies, and high temperature operation. WBG semiconductors are likely candidates to replace silicon-based semiconductors in the near future seeing as Silicon is fast approaching its performance limits for high power requirements. Wide-bandgap power semiconductor devices offer breakthrough circuit performance enabling low losses, high switching frequencies, and high temperature operation which will allow for enormous energy efficiency gains in a wide range of potential applications. In the past ten years, the U.S. Department of Energy’s Advanced Research Project Agency - Energy (ARPA-E), which was established to fund creative, out-of-the-box, transformational energy technologies that are too early for private-sector investment, has invested in WBG semiconductors including material and device-centric programs along with application specific programs targeting the barriers to widespread adoption in power electronics. Under these ARPA-E programs, medium voltage (10-20kV) WBG device development has commenced to push the voltage boundaries of the devices including the development of WBG super-junction devices. Light triggered photoconductive WBG devices are also being investigated for MV applications. The WBG MV devices will enable MVDC grid distribution applicable to markets including electrified transportation, renewable interconnections, and offshore oil, gas, and wind production. Other WBG device ideas are also being explored under ARPA-E programs including WBG integrated circuits and neutron detectors. The progress and challenges of the WBG devices being developed under ARPA-E programs will be reviewed along with thoughts on the future trends of WBG device development.
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3

Hasan, Md Nazmul, Edward Swinnich, and Jung-Hun Seo. "Recent Progress in Gallium Oxide and Diamond Based High Power and High-Frequency Electronics." International Journal of High Speed Electronics and Systems 28, no. 01n02 (March 2019): 1940004. http://dx.doi.org/10.1142/s0129156419400044.

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Анотація:
In recent years, the emergence of the ultrawide‐bandgap (UWBG) semiconductor materials that have an extremely large bandgap, exceeding 5eV including AlGaN/AlN, diamond, β-Ga2O3, and cubic BN, provides a new opportunity in myriad applications in electronic, optoelectronic and photonics with superior performance matrix than conventional WBG materials. In this review paper, we will focus on high power and high frequency devices based on two most promising UWBG semiconductors, β-Ga2O3 and diamond among various UWBG semiconductor devices. These two UWBG semiconductors have gained substantial attention in recent years due to breakthroughs in their growth technique as well as various device engineering efforts. Therefore, we will review recent advances in high power and high frequency devices based on β-Ga2O3 and diamond in terms of device performance metrics such as breakdown voltage, power gain, cut off frequency and maximum operating frequency.
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4

Yater, J. E. "Secondary electron emission and vacuum electronics." Journal of Applied Physics 133, no. 5 (February 7, 2023): 050901. http://dx.doi.org/10.1063/5.0130972.

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Secondary electron emission serves as the foundation for a broad range of vacuum electronic devices and instrumentation, from particle detectors and multipliers to high-power amplifiers. While secondary yields of at least 3–4 are required in practical applications, the emitter stability can be compromised by surface dynamics during operation. As a result, the range of practical emitter materials is limited. The development of new emitter materials with high yield and robust operation would advance the state-of-the-art and enable new device concepts and applications. In this Perspective article, I first present an analysis of the secondary emission process, with an emphasis on the influence of material properties. From this analysis, ultra-wide bandgap (UWBG) semiconductors and oxides emerge as superior emitter candidates owing to exceptional surface and transport properties that enable a very high yield of low-energy electrons with narrow energy spread. Importantly, exciting advances are being made in the development of promising UWBG semiconductors such as diamond, cubic boron nitride (c-BN), and aluminum nitride (AlN), as well as UWBG oxides with improved conductivity and crystallinity. These advances are enabled by epitaxial growth techniques that provide control over the electronic properties critical to secondary electron emission, while advanced theoretical tools provide guidance to optimize these properties. Presently, H-terminated diamond offers the greatest opportunity because of its thermally stable negative electron affinity (NEA). In fact, an electron amplifier under development exploits the high yield from this NEA surface, while more robust NEA diamond surfaces are demonstrated with potential for high yields in a range of device applications. Although c-BN and AlN are less mature, they provide opportunities to design novel heterostructures that can enhance the yield further.
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Kouvetakis, J., Jose Menendez, and John Tolle. "Advanced Si-based Semiconductors for Energy and Photonic Applications." Solid State Phenomena 156-158 (October 2009): 77–84. http://dx.doi.org/10.4028/www.scientific.net/ssp.156-158.77.

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Group-IV semiconductors, including alloys incorporating Sn, have been grown on dimensionally dissimilar Si substrates using novel molecular hydride chemistries with tunable reactivities that enable low temperature, CMOS compatible integration via engineering of the interface microstructure. Here we focus on properties of three such Ge-based systems including: (1) device quality Ge layers with thicknesses >5m possessing dislocation densities <105/cm2 are formed using molecular mixtures of Ge2H6 and highly reactive (GeH3)2CH2 organometallic additives circumventing the classical Stranski-Krastanov growth mechanism, (2) metastable GeSn alloys are grown on Si via reactions of Ge2H6 and SnD4, and (3) ternary SiGeSn analogs are produced lattice-matched to Ge-buffered Si using admixtures of SiGeH6, SiGe2H8, SnD4, Ge2H6, and Si3H8. Optical experiments and prototype device fabrication demonstrate that the ternary SiGeSn system represents the first group-IV alloy with a tunable electronic structure at fixed lattice constant, effectively decoupling band gap and strain and eliminating the most important limitation in device designs based on group-IV materials. Doping at levels higher than 1019 cm-3 (both p and n-type) is achieved for all the above semiconductor systems using a similar precursor chemistry approach. Electrical and infrared optical experiments demonstrate that doped GeSn and SiGeSn have mobilities that compare or exceed that of bulk Ge. The potential applications of these materials, including micro- and optoelectronics as well as photovoltaics and thermoelectricity, are discussed.
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6

He, Yashuo, Haotian Wan, Xiaoning Jiang, and Chang Peng. "Piezoelectric Micromachined Ultrasound Transducer Technology: Recent Advances and Applications." Biosensors 13, no. 1 (December 29, 2022): 55. http://dx.doi.org/10.3390/bios13010055.

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The objective of this article is to review the recent advancement in piezoelectric micromachined ultrasound transducer (PMUT) technology and the associated piezoelectric materials, device fabrication and characterization, as well as applications. PMUT has been an active research topic since the late 1990s because of the ultrasound application needs of low cost large 2D arrays, and the promising progresses on piezoelectric thin films, semiconductors, and micro/nano-electromechanical system technology. However, the industrial and medical applications of PMUTs have not been very significant until the recent success of PMUT based fingerprint sensing, which inspired growing interests in PMUT research and development. In this paper, recent advances of piezoelectric materials for PMUTs are reviewed first by analyzing the material properties and their suitability for PMUTs. PMUT structures and the associated micromachining processes are next reviewed with a focus on the complementary metal oxide semiconductor compatibility. PMUT prototypes and their applications over the last decade are then summarized to show the development trend of PMUTs. Finally, the prospective future of PMUTs is discussed as well as the challenges on piezoelectric materials, micro/nanofabrication and device integration.
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Al-bayati, Ali Mahmoud Salman. "Behavior, Switching Losses, and Efficiency Enhancement Potentials of 1200 V SiC Power Devices for Hard-Switched Power Converters." CPSS Transactions on Power Electronics and Applications 7, no. 2 (June 30, 2022): 113–29. http://dx.doi.org/10.24295/cpsstpea.2022.00011.

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Анотація:
Semiconductor power devices are the major constituents of any power conversion system. These systems are faced by many circumscriptions due to the operating constraints of silicon (Si) based semiconductors under certain conditions. The emergence and persistence evolution of wide bandgap technology pledge to transcend the restrictions imposed by Si based semiconductors. This paper presents a thorough experimental study and assessment of the performance of three power devices: 1200 V SiC cascode, 1200 V SiC MOSFET, and 1200 V Si IGBT under the same hardware setup. The study aims to capture the major attributes for each power device toward determining their realistic potential applications. The switching performance of each power device is studied and reported. As the gate resistance is a crucial factor in a power device characterization, an extensive analysis of hard-switching losses under different separated turn-on and turn-off gate resistances is also performed and discussed. To appraise the fast switching capability, the switching dv/dts and di/dts are measured and analyzed for each power device. Furthermore, insights are provided about the dependency of switching energy losses on the power device current and blocking voltage. This paper also focuses on evaluating the operations and the performances of these power devices in a hard-switched dc-dc converter topology. While using of 1200 V SiC Schottky diode in the converter design with each power device, the high switching frequency operations and efficiency of the converter are reported and thoroughly explored. The SiC cascode exhibited superior performance when compared to the other two power devices. The results and analyses represent guidelines and prospects for designing advanced power conversion systems.
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8

Jiang, He, Jibiao Jin, Zijie Wang, Wuji Wang, Runfeng Chen, Ye Tao, Qin Xue, Chao Zheng, Guohua Xie, and Wei Huang. "Constructing Donor-Resonance-Donor Molecules for Acceptor-Free Bipolar Organic Semiconductors." Research 2021 (February 9, 2021): 1–10. http://dx.doi.org/10.34133/2021/9525802.

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Анотація:
Organic semiconductors with bipolar transporting character are highly attractive as they offer the possibility to achieve high optoelectronic performance in simple device structures. However, the continual efforts in preparing bipolar materials are focusing on donor-acceptor (D-A) architectures by introducing both electron-donating and electron-withdrawing units into one molecule in static molecular design principles. Here, we report a dynamic approach to construct bipolar materials using only electron-donating carbazoles connected by N-P=X resonance linkages in a donor-resonance-donor (D-r-D) structure. By facilitating the stimuli-responsive resonance variation, these D-r-D molecules exhibit extraordinary bipolar properties by positively charging one donor of carbazole in enantiotropic N+=P-X- canonical forms for electron transport without the involvement of any acceptors. With thus realized efficient and balanced charge transport, blue and deep-blue phosphorescent organic light emitting diodes hosted by these D-r-D molecules show high external quantum efficiencies up to 16.2% and 18.3% in vacuum-deposited and spin-coated devices, respectively. These results via the D-r-D molecular design strategy represent an important concept advance in constructing bipolar organic optoelectronic semiconductors dynamically for high-performance device applications.
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9

Oshima, Yuichi, та Elaheh Ahmadi. "Progress and challenges in the development of ultra-wide bandgap semiconductor α-Ga2O3 toward realizing power device applications". Applied Physics Letters 121, № 26 (26 грудня 2022): 260501. http://dx.doi.org/10.1063/5.0126698.

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Анотація:
Ultra-wide-bandgap (UWBG) semiconductors, such as Ga2O3 and diamond, have been attracting increasing attention owing to their potential to realize high-performance power devices with high breakdown voltage and low on-resistance beyond those of SiC and GaN. Among numerous UWBG semiconductors, this work focuses on the corundum-structured α-Ga2O3, which is a metastable polymorph of Ga2O3. The large bandgap energy of 5.3 eV, a large degree of freedom in band engineering, and availability of isomorphic p-type oxides to form a hetero p–n junction make α-Ga2O3 an attractive candidate for power device applications. Promising preliminary prototype device structures have been demonstrated without advanced edge termination despite the high dislocation density in the epilayers owing to the absence of native substrates and lattice-matched foreign substrates. In this Perspective, we present an overview of the research and development of α-Ga2O3 for power device applications and discuss future research directions.
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10

Carlson, Eric P., Daniel W. Cunningham, Yan Zhi Xu, and Isik C. Kizilyalli. "Power Electronic Devices and Systems Based on Bulk GaN Substrates." Materials Science Forum 924 (June 2018): 799–804. http://dx.doi.org/10.4028/www.scientific.net/msf.924.799.

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Анотація:
Wide-bandgap power semiconductor devices offer enormous energy efficiency gains in a wide range of potential applications. As silicon-based semiconductors are fast approaching their performance limits for high power requirements, wide-bandgap semiconductors such as gallium nitride (GaN) and silicon carbide (SiC) with their superior electrical properties are likely candidates to replace silicon in the near future. Along with higher blocking voltages wide-bandgap semiconductors offer breakthrough relative circuit performance enabling low losses, high switching frequencies, and high temperature operation. ARPA-E’s SWITCHES program, started in 2014, set out to catalyze the development of vertical GaN devices using innovations in materials and device architectures to achieve three key aggressive targets: 1200V breakdown voltage (BV), 100A single-die diode and transistor current, and a packaged device cost of no more than ȼ10/A. The program is drawing to a close by the end of 2017 and while no individual project has yet to achieve all the targets of the program, they have made tremendous advances and technical breakthroughs in vertical device architecture and materials development. GaN crystals have been grown by the ammonothermal technique and 2-inch GaN wafers have been fabricated from them. Near theoretical, high-voltage (1700-4000V) and high current (up to 400A pulsed) vertical GaN diodes have been demonstrated along with innovative vertical GaN transistor structures capable of high voltage (800-1500V) and low RON (0.36-2.6 mΩ-cm2). The challenge of selective area doping, needed in order to move to higher voltage transistor devices has been identified. Furthermore, a roadmap has been developed that will allow high voltage/current vertical GaN devices to reach ȼ5/A to ȼ7/A, realizing functional cost parity with high voltage silicon power transistors.
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Дисертації з теми "Semiconductors - Advance Device Applications"

1

Chang, Ruey-dar. "Physics and modeling of dopant diffusion for advanced device applications /." Digital version accessible at:, 1998. http://wwwlib.umi.com/cr/utexas/main.

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2

Stella, Marco. "Study of Organic Semiconductors for Device Applications." Doctoral thesis, Universitat de Barcelona, 2010. http://hdl.handle.net/10803/21620.

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Organic semiconductors are being investigated as an alternative to more traditional materials such as silicon, for the fabrication of different types of electronic devices. The advantages of such materials are flexibility, lightness and quick and low cost device production methods. In this thesis we analyze some small molecule organic semiconductors for their use in devices such as thin film transistors and photovoltaic cells. These materials, deposited in thin films on glass by thermal vacuum evaporation, are copper phthalocyanine (CuPc) and pentacene, p-type materials, fullerene (C60), PTCDA and PTCDI-C13, that are n-type. We analyze their optical properties by optical transmittance measurement and photothermal deflection spectroscopy (PDS). By such means we obtain the absorption coefficient of the materials in sub-gap region (near infrared - NIR), directly related with the density of electronic states. Furthermore, we examine thin film microstructure by X-ray diffraction (XRD) in order to observe if it is amorphous or polycrystalline. The data obtained by optical methods are used to calculate optical gap (Eg) and Urbach energy (Eu). The former of these parameters gives important information about the absorption properties of the material in the visible and NIR ranges of the spectrum, while the latter about the structural disorder in the film. Since a clear model for organic semiconductors is still not defined, in both cases we employ models that are usually considered in the case of inorganic semiconductors. The XRD analysis indicates that, in the deposition conditions used in this work, only C60 grows with amorphous structure while all the other materials are polycrystalline. Such result is used to determine which law can be used to estimate the optical gap: the general law for direct allowed electronic transitions in semiconductors for polycrystalline materials or the Tauc law for amorphous ones. The Urbach law, usually employed to have an idea about the amount of disorder in amorphous films, is used for all our materials as an indicator of thin film quality. Furthermore, we examine the stability of the materials over time under exposure to direct radiation and atmosphere and to compare the results with the ones obtained for samples simply exposed to atmosphere. PTCDA and CuPc have demonstrated to be stable against oxidizing agents that are present in atmosphere while the other materials suffer modifications in their optical properties. Such variations, principally located in the sub-gap region of the absorption region, indicate that an increase in the absorption level is obtained, probably due to the presence of defects that could work as charge carrier traps. Annealing treatments are performed on the degraded materials to observe that the degradation process is not reversible. Organic photovoltaic cells always include a heterojunction between two semiconductors, so the same study is performed on mixtures of two materials, a p-type and an n-type one, testing all the possible combinations between the investigated materials. The films are obtained by co-evaporating the two materials in 1:1 proportion. A mixture containing a degrading material also degrades. Heat treatments performed on the samples yield a partial crystallization of some materials but not of others and fail to recover the original optical properties when degradation occurs. Finally, two types of devices are fabricated: thin film transistors (TFTs) using PTCDI-C13 and diodes with CuPc. In the first case we obtain very interesting results, determining that the devices work as typical n-type channel transistors. An analysis of the device characterizations allows us to determine the density of electronic states in the channel obtaining a result that is very similar to the one obtained by optical means on the same material. In the second case we observe the typical diode behaviour but the response with light of such devices, characterized by having a structure similar to the one of Schottky type solar cells, is very low.
Los semiconductores orgánicos están siendo investigados como alternativos a materiales más tradicionales, como el silicio, para la fabricación de varios tipos de dispositivos electrónicos. Las ventajas que presentan tales materiales son flexibilidad, ligereza, rapidez y bajo coste de los métodos de producción de los dispositivos orgánicos. En esta tesis se analizan algunos semiconductores orgánicos de molécula pequeña para su aplicación en dispositivos como los transistores en capa delgada y las células fotovoltaicas. Tales materiales, depositados en capa delgada por evaporación térmica en vacío, son ftalocianina de cobre (CuPc) y pentaceno, de tipo p, fullereno (C60), PTCDA y PTCDI-C13, de tipo n. Se analizan las propiedades ópticas de ellos por medio de la medida de Trasmitancia Óptica y de la Espectroscopia de Deflección Fototérmica (PDS). Además se analiza la microestructura de las capas delgadas por difracción de rayos X (XRD) con el objetivo de observar si las capas tienen estructura amorfa o policristalina. Los datos son utilizados para calcular el gap óptico (Eg) y la energía de Urbach (Eu). Se analiza la estabilidad de los materiales con el pasar del tiempo y la exposición a irradiación directa, por un lado, y a la atmosfera, por otro lado. El fullereno es el único material que se deposita con estructura amorfa. Además se ha observado que CuPc y PTCDA son estables frente a la degradación por exposición a agentes oxidantes. Las células fotovoltaicas orgánicas incluyen siempre una heterounión entre dos semiconductores, así que se repite el mismo estudio sobre mezclas de dos materiales, uno de tipo p y otro de tipo n, probando todas las combinaciones posibles con los materiales analizados. Se observa que en una mezcla que incluya un material que presenta inestabilidad también hay degradación. Los tratamientos térmicos efectuados sobre las muestras han permiten obtener una parcial cristalización de algunos materiales pero no de otros y no llevan a recuperar las propiedades ópticas originarias, perdidas con la degradación. Finalmente, se fabrican dos tipos de dispositivos: TFTs de PTCDI-C13 y diodos de CuPc. En el primer caso se obtienen resultados interesantes, detectando que los dispositivos funcionan como típicos transistores en capa delgada de tipo n. En el segundo caso se observa el típico comportamiento de los diodos. Sin embargo, la respuesta con luz de tales dispositivos, de estructura análoga a fotocélulas de tipo Schottky, es muy escasa.
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3

Salem, Ali F. "Advanced numerical simulation modeling for semiconductor devices and it application to metal-semiconductor-metal photodetectors." Diss., Georgia Institute of Technology, 1995. http://hdl.handle.net/1853/13834.

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4

Forgie, John. "The study of organic semiconductors towards device applications." Thesis, University of Strathclyde, 2010. http://oleg.lib.strath.ac.uk:80/R/?func=dbin-jump-full&object_id=22624.

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Анотація:
In recent years, the use of novel organic conjugated materials as semiconductors in electronic devices has become a continuingly growing and interesting field of research; the attraction derives from the ability of the materials to be easily manipulated and tailored to suit the desired outcome. Organic semiconductors have tunable band gaps and redox properties that can be influenced through variation of the substituents; accompanying this with the ease and reduced cost of processability required for these materials, it makes them very favourable for device fabrication. Organic semiconductors have found use in devices such as electrochromics, light emitting diodes, field effect transistors, photovoltaics, and sensors. In this thesis, the synthesis and characterisation of many compounds suitable for the aforementioned applications are reported. Chapter two is the characterisation of monomers and polymers based on the incorporation of tetrathianaphthalene and its open and cyclic forms. Chapter three is the study of conjugated monomers and polymers, containing BODIPY in the main chain, towards the use in photovoltaic devices. Chapter four reports on unusual extended conjugated architectures, the first section is the characterisation of two new dendralene compounds that adopt two different conformers in solution and solid state and the second section reports on a new series of diindenothienothiophene based materials with interesting electrochemical and photophysical properties. In chapter five, a series of compounds that contain a benzobisthiazole core are investigated and in chapter six, the development of two new biological sensors are discussed.
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5

Cheng, Cheng. "Semiconductor colloidal quantum dots for photovoltaic applications." Thesis, University of Oxford, 2014. http://ora.ox.ac.uk/objects/uuid:07baccd0-2098-4306-8a9a-49160ec6a15a.

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This thesis studies lead suphide (PbS) colloidal quantum dots and their photovoltaic applications. Different sizes of PbS QDs were synthesised and characterised using absorption spectroscopy and transmission electron microscopes. PbS QD Schottky junction devices were fabricated with AM1.5 power conversion efficiency up to 1.8 %. The Schottky junction geometry limits the device performance. A semiconductor heterojunction using ZnO as an electron acceptor was built and the device efficiency increased to 3%. By studying the light absorption and charge extraction profile of the bilayer device, the absorber layer has a charge extraction dead zone which is beyond the reach of the built-in electric field. Therefore, strategies to create a QD bulk heterojunction were considered to address this issue by distributing the junction interface throughout the absorber layer. However, the charge separation mechanism of the QD heterojunction is not clearly understood: whether it operates as an excitonic or a depleted p-n junction, as the junction operating mechanism determines the scale of phase separation in the bulk morphology. This study shows a transitional behaviour of the PbS/ZnO heterojunction from excitonic to depletion by increasing the doping density of ZnO. To utilise the excitonic mechanism, a PbS/ZnO nanocrystal bulk heterojunction was created by blending the two nanocrystals in solution such that a large interface between the two materials could facilitate fast exciton dissociation. However, the devices show poor performance due to a coarse morphology and formation of germinate pairs. To create a bulk heterojunction where a built-in electric field could assist the charge separation, a TiO2 porous structure with the pore size matching with the depletion width was fabricated and successfully in-filled by PbS QDs. The porous device produces 5.7% power conversion efficiency, among one of the highest in literature. The enhancement comes from increased light absorption and suppression of charge recombination.
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6

Kwok, Kwong Chau. "Transport and device applications of organic photovoltaic materials." HKBU Institutional Repository, 2010. http://repository.hkbu.edu.hk/etd_ra/1164.

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7

Tant, Julien. "Discotic liquid crystals as organic semiconductors for photovoltaic device applications." Doctoral thesis, Universite Libre de Bruxelles, 2004. http://hdl.handle.net/2013/ULB-DIPOT:oai:dipot.ulb.ac.be:2013/211134.

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Les sources d'énergie renouvelable connaissent un essor grandissant. Parmi celles-ci se trouvent les cellules photovoltaïques. Elles ont pour objet la transformation de la lumière en électricité. Les dispositifs actuels, basés sur le silicium, nécessitent des matériaux de très grande pureté et de hautes températures de mise en œuvre, les empêchant de concurrencer les principales sources d’énergie actuelles (fossile, nucléaire).

Une alternative pourrait provenir des matériaux semi-conducteurs organiques. En effet, l’utilisation de méthodes de mise en œuvre à partir de solutions pourrait permettre la fabrication de dispositifs flexibles et bon marché. Des résultats encourageants ont été obtenus avec des polymères conjugués et de petites molécules organiques. Les cristaux liquides discotiques CLDs forment une catégorie particulièrement intéressante de matériaux. Ils ont en effet la capacité de s’organiser spontanément en colonnes de molécules, formant des semi-conducteurs à une dimension. Leurs propriétés intéressantes en tant que semi-conducteurs, combinées à une mise en œuvre facile, en font de bons candidats pour de futures applications.

Dans ce travail, deux familles complémentaires de matériaux discotiques ont été développées, formant une paire de semi-conducteurs de type n et p. Leurs structures chimiques ont été étudiées en vue d'obtenir des matériaux possédant un ensemble de propriétés choisies afin d’optimiser les paramètres clefs du processus de photo-génération de charges. Ces propriétés sont les suivantes: forte absorption de la lumière dans le visible, fort caractère semi-conducteur de type n ou p, pas de phase cristalline à température ambiante, présence d'une phase cristal liquide colonne, phase isotrope en dessous de 200°C. De plus, les matériaux doivent être accessibles en un nombre minimum d’étapes d’une synthèse efficace, et ce avec un haut niveau de pureté. Ils doivent également être fortement solubles dans les solvants organiques usuels.

Cette étude comporte, pour chacune des deux familles de matériaux, le design de leur structure chimique, leur synthèse et la caractérisation de leurs propriétés physiques (thermotropes, optoélectroniques, électrochimiques). Comme possible semi-conducteur de type p, cinq dérivés tétrasubstitués de la phthalocyanine non-métallée ont été synthétisés, donnant un matériau possédant l’ensemble des propriétés recherchées. Comme possible semi-conducteur de type n, six dérivés hexasubstitués de l’hexaazatrinaphthylène ont été étudiés. L’un d’eux possède les propriétés requises.

Finalement, les propriétés optoélectroniques et photovoltaïques de mélanges des deux matériaux les plus prometteurs, ensemble ou avec d’autres matériaux, ont été étudiées. Des cellules solaires de rendement maximum de 1 % ont été obtenues pour deux dispositifs de compositions différentes.

Ces rendements, bien qu’inférieurs à ceux obtenus précédemment par d’autres groupes (jusqu’à 34 % à ce jour), sont néanmoins révélateurs des potentialités des matériaux organiques, et plus particulièrement des cristaux liquides discotiques, pour de futures applications dans le domaine des dispositifs électroniques.


Doctorat en sciences, Spécialisation chimie
info:eu-repo/semantics/nonPublished

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8

Urban, H. "Three-dimensional device structures for photovoltaic applications." Thesis, University of Oxford, 2013. http://ora.ox.ac.uk/objects/uuid:e308d352-b342-4c44-a5f6-53121e2cc267.

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Harnessing solar energy has become a promising clean and renewable energy source alternative to fossil fuels since the development of low-cost dye sensitized solar cells (DSSC) and organic photovoltaic solar cell devices. Their power-conversion efficiencies, below 13% and 9% respectively, still limit the economic viability of these technologies. The geometry and optical properties of photonic crystals can be used to improve the absorption and charge collection efficiencies of these devices. This thesis describes the fabrication of TiO2 DSSC and ZnO-polymer solar cell devices based on a three-dimensional photonic crystal structure. Photonic crystal polymer structures were produced by holographic lithography and thermally stabilized in order to be used as templates for atomic layer deposition (ALD) of various metal oxides. For this purpose, an ALD apparatus was built and ALD processes for the growth of TiO2, ZnO, Al2O3, ZnO:Al, and Zr3N4 were established and deposited on photonic crystal templates. After ALD, the template was removed by calcination at 500°C, at which ZnO:Al films lost their conductivity of 250 S/cm preventing their use as transparent conducting oxide (TCO) electrodes. The produced 90 nm TiO2 photonic crystal shell DSSC and TiO2 inverse replica devices based on the dye N-719 and iodine/iodide redox electrolyte provided power-conversion efficiencies of 0.9% and 0.49% respectively and their diffusion lengths were 2× and 3× longer than that of a nanocrystalline reference device respectively. ZnO-polymer devices, comprising a P3HT layer as absorber and PEDOT:PSS film as hole-transporter, were also investigated.
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9

Sit, Jon Wai Yu. "Growth and characterization of organic/inorganic thin films for photonic device applications." HKBU Institutional Repository, 2015. https://repository.hkbu.edu.hk/etd_oa/179.

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Thin film transistors (TFTs) can be used to determine the bulk-like mobilities of amorphous semiconductors. Different organic hole transporters (HTs) are under investigation including spiro-TPD, 2TNATA, NPB and TPD which are commonly used in organic light-emitting diodes (OLEDs). In addition, we also measure the TFT hole mobilities of two iridium phosphors: Ir(ppy)3 and Ir(piq)3. These materials were grown on two different gate dielectric surfaces which were SiO2 and polystyrene (PS). On SiO2, the TFT mobilities are found to be 1-2 orders smaller than the bulk hole mobilities as evaluated independently by time-of-flight (TOF) technique. On the other hand, on PS gate dielectric layer, the TFT mobilities of these hole transporters are found to be in good agreement with TOF data. A thickness dependence measurement was carried out on TFT with PS. We found that only 10nm of organic semiconductor is sufficient for TFTs to achieve TOF mobilities. We further investigate why organic semiconductors on SiO2 have such huge reduction of mobilities. Temperature dependent mobility measurements were carried out and the data were analyzed by the Gaussian Disorder Model (GDM). We found that on SiO2 surface, when compared to the bulk values, the energetic disorders (σ) of the HTs increase and simultaneously, the high temperature limits (∞) of the carrier mobilities decrease. Both σ and ∞ contribute to the reduction of the carrier mobility. The increase in σ is related to the presence of randomly oriented polar Si-O bonds. The reduction of ∞ is topological in origin and is related to the orientations of the more planar molecules on SiO2. The more planar molecules tend to lie horizontally on the surface and such orientation is unfavorable for charge transport in TFT configuration. Hybrid organic/inorganic perovskites have emerged as an outstanding material for photovoltaic cells. In the second part of this work, we setup a repeatable perovskite recipe and optimized the system under different conditions. Under certain circumstances, a perovskite solar cell with power conversion efficiency ~9% can be achieved with PEDOT:PSS as hole transporting layer with the conventional structure.
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10

Eiting, Christopher James. "Growth of III-V nitride materials by MOCVD for device applications /." Digital version accessible at:, 1999. http://wwwlib.umi.com/cr/utexas/main.

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Книги з теми "Semiconductors - Advance Device Applications"

1

Sharma, Ashok K. Advanced semiconductor memories: Architectures, designs, and applications. Piscataway, NJ: IEEE Press, 2003.

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2

Mitra, Dutta, and Stroscio Michael A. 1949-, eds. Advanced semiconductor heterostructures: Novel devices, potential device applications and basic properties. Singapore: World Scientific, 2003.

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3

1943-, Barnham Keith, and Vvedensky Dimitri D, eds. Low-dimensional semiconductor structures: Fundamentals and device applications. Cambridge, U.K: Cambridge University Press, 2001.

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4

Self-organized organic semiconductors: From materials to device applications. Hoboken, N.J: Wiley, 2011.

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5

Topical Meeting on Advanced Semiconductor Lasers and Their Applications (1999 Santa Barbara, California). Advanced semiconductor lasers and their applications: From the Topical Meeting on Advanced Semiconductor Lasers and Their Applications, July 21-23, 1999, Santa Barbara, California. Washington, DC: Optical Society of America, 2000.

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6

Nobuyoshi, Koshida, and SpringerLink (Online service), eds. Device Applications of Silicon Nanocrystals and Nanostructures. Boston, MA: Springer US, 2009.

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7

Liquid-phase epitaxial growth of III-V compound semiconductor materials and their device applications. Bristol: A. Hilger, 1990.

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8

Semiconductor device-based sensors for gas, chemical, and biomedical applications. Boca Raton, Fla: CRC, 2011.

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9

1948-, Chen David, ed. Semiconductor optoelectronic device manufacturing and applications: 7-9 November 2001, Nanjing, China. Bellingham, Wash., USA: SPIE, 2001.

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10

B, Gil, and Aulombard R. L, eds. Semiconductor heteroepitaxy: Growth, characterization, and device applications : Montpellier, France, 4-7 July 1995. Singapore: World Scientific, 1995.

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Частини книг з теми "Semiconductors - Advance Device Applications"

1

Timans, P. J., G. Xing, J. Cibere, S. Hamm, and S. McCoy. "Millisecond Annealing for Semiconductor Device Applications." In Subsecond Annealing of Advanced Materials, 229–70. Cham: Springer International Publishing, 2014. http://dx.doi.org/10.1007/978-3-319-03131-6_13.

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2

Gupta, K. M., and Nishu Gupta. "Semiconductor Materials: Their Properties, Applications, and Recent Advances." In Advanced Semiconducting Materials and Devices, 3–40. Cham: Springer International Publishing, 2015. http://dx.doi.org/10.1007/978-3-319-19758-6_1.

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3

Dugaev, Vitalii K., and Vladimir I. Litvinov. "Magnetic Semiconductors." In Modern Semiconductor Physics and Device Applications, 207–26. Boca Raton: CRC Press, 2021. http://dx.doi.org/10.1201/9780429285929-11.

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4

Kalachev, Leonid V. "Some Applications of Asymptotic Methods in Semiconductor Device Modeling." In Semiconductors, 209–21. New York, NY: Springer New York, 1994. http://dx.doi.org/10.1007/978-1-4613-8410-6_11.

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5

Ghibaudo, G. "Mobility Characterization in Advanced FD-SOI CMOS Devices." In Semiconductor-On-Insulator Materials for Nanoelectronics Applications, 307–22. Berlin, Heidelberg: Springer Berlin Heidelberg, 2011. http://dx.doi.org/10.1007/978-3-642-15868-1_17.

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Dugaev, Vitalii K., and Vladimir I. Litvinov. "Quantum Confinement in Semiconductors." In Modern Semiconductor Physics and Device Applications, 27–41. Boca Raton: CRC Press, 2021. http://dx.doi.org/10.1201/9780429285929-2.

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7

Pearton, Stephen J., James W. Corbett, and Michael Stavola. "Prevalence of Hydrogen Incorporation and Device Applications." In Hydrogen in Crystalline Semiconductors, 282–318. Berlin, Heidelberg: Springer Berlin Heidelberg, 1992. http://dx.doi.org/10.1007/978-3-642-84778-3_11.

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Dugaev, Vitalii K., and Vladimir I. Litvinov. "Impurities and Disorder in Semiconductors." In Modern Semiconductor Physics and Device Applications, 43–67. Boca Raton: CRC Press, 2021. http://dx.doi.org/10.1201/9780429285929-3.

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Dugaev, Vitalii K., and Vladimir I. Litvinov. "Statistics of Electrons in Semiconductors." In Modern Semiconductor Physics and Device Applications, 69–80. Boca Raton: CRC Press, 2021. http://dx.doi.org/10.1201/9780429285929-4.

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10

Dugaev, Vitalii K., and Vladimir I. Litvinov. "Spin-Resolved Transport in Semiconductors." In Modern Semiconductor Physics and Device Applications, 175–89. Boca Raton: CRC Press, 2021. http://dx.doi.org/10.1201/9780429285929-9.

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Тези доповідей конференцій з теми "Semiconductors - Advance Device Applications"

1

Ross, Jennifer, Nathan Newman, and Mike Rubin. "GaN for short-wavelength light emitting devices: growth kinetics and techniques." In Compact Blue-Green Lasers. Washington, D.C.: Optica Publishing Group, 1993. http://dx.doi.org/10.1364/cbgl.1993.cthc.3.

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In the recent year, great steps have been achieved in the development of blue-green semiconductor diode lasers and LEDs, however material issues in the wide-bandgap semiconductors still limit practical device applications. The II-VI compounds ZnSe and ZnS and the III-V semiconductors GaN and AIN are the two material system being investigated for green to ultra- violet light emitting devices, with most research to date concentrating on the II-VI materials. Problems with electromigration, heating, and subsequent processing in early ZnSe/ZnS laser diodes has led many researchers to investigate the more robust material GaN for commercially viable short wavelength LEDs and laser diodes. GaN blue LEDs at room temperature have been demonstrated by Akasaki et al. [1], but p-type doping levels are not yet sufficiently high for laser diodes. The main obstacle in fabricating high quality GaN for device applications has been controlling background impurity and dopant concentrations during crystal growth and finding suitable substrates with closely matching lattice and thermal expansion coefficients. The dilemma in obtaining p-type conduction in GaN is hypothesized to be due to a large concentration of nitrogen vacancies[2] acting as shallow donors making compensation difficult. Aside from Akasaki's and Nakamura's work in Japan [1,13], all GaN material by any growth techniques has been n-type. Advances in the last few years, have produced undoped material with a reduced concentration using Metal Organic Chemical Vapor Deposition (MOCVD) (4x1016 cm-3) [3] and plasma/ion-assisted Molecular Beam Epitaxy (MBE) (8 x 1013 cm-3)[4].
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2

Grzybowski, Richard R., and Ben Gingrich. "High Temperature Silicon Integrated Circuits and Passive Components for Commercial and Military Applications." In ASME 1998 International Gas Turbine and Aeroengine Congress and Exhibition. American Society of Mechanical Engineers, 1998. http://dx.doi.org/10.1115/98-gt-362.

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Advances in silicon-on-insulator (SOI) integrated circuit technology and the steady development of wider band gap semiconductors like silicon carbide are enabling the practical deployment of high temperature electronics. High temperature civilian and military electronics applications include distributed controls for aircraft, automotive electronics, electric vehicles and instrumentation for geothermal wells, oil well logging and nuclear reactors. While integrated circuits are key to the realization of complete high temperature electronic systems, passive components including resistors, capacitors, magnetics and crystals are also required. This paper will present characterization data obtained from a number of silicon high temperature integrated evaluated over a range of elevated temperatures and aged at a selected high temperature. This paper will also present a representative cross section of high temperature passive component characterization data for device types needed by many applications. Device types represented will include both small signal and power resistors and capacitors. Specific problems encountered with the employment of these devices in harsh environments will be discussed for each family of components. The goal in presenting this information is to demonstrate the viability of a significant number of commercially available silicon integrated circuits and passive components that operate at elevated temperatures as well as to encourage component suppliers to continue to optimize a selection of their product offerings for operation at higher temperatures. In addition, systems designers will be encouraged to view this information with an eye toward the conception and implementation of reliable and affordable high temperature systems.
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3

Du, A. Y., J. Zhu, Y. K. Zhou, B. H. Liu, Eddie Er, Z. Q. Mo, S. P. Zhao, and Jeffrey Lam. "Advanced TEM applications in semiconductor devices." In 2014 IEEE 21st International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA). IEEE, 2014. http://dx.doi.org/10.1109/ipfa.2014.6898193.

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4

DePoy, D. M., R. J. Dziendziel, G. W. Charache, P. F. Baldasaro, and B. C. Campbell. "Interference Filters for Thermophotovoltaic Applications." In Optical Interference Coatings. Washington, D.C.: Optica Publishing Group, 1997. http://dx.doi.org/10.1364/oic.1998.thc.5.

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Direct conversion of heat to electricity using Thermophotovoltaic (TPV) systems is attracting renewed attention due to recent advances on low bandgap (0.5-0.7 eV) III-V semiconductor materials and devices. TPV systems utilize the same principle of operation as solar cells. In particular, a heat source radiatively emits photons which are incident on a semiconductor TPV device. Photons with energy greater than the semiconductor bandgap, Eg (typically ranging from 0.50 eV to 0.73 eV for TPV devices), excite electrons from the valence band to the conduction band. The resultant electron-hole pairs are then collected by metal contacts and can power electrical loads. Photons with energy less than the semiconductor bandgap are parasitically absorbed as heat. In order to increase the efficiency of a TPV system, some form of spectral control is used to reflect photons with energy less than the semiconductor bandgap back to the radiator.
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5

Meyer-Friedrichsen, Timo, Andreas Elschner, Frank Keohan, Wilfried Lövenich, and Sergei A. Ponomarenko. "Conductors and semiconductors for advanced organic electronics." In SPIE Photonic Devices + Applications, edited by Zhenan Bao and Iain McCulloch. SPIE, 2009. http://dx.doi.org/10.1117/12.826270.

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6

Meyer-Friedrichsen, Timo, Wilfried Lövenich, and Ron Lubianez. "Conductors and semiconductors for advanced organic electronics." In SPIE Photonic Devices + Applications, edited by Zhenan Bao and Iain McCulloch. SPIE, 2011. http://dx.doi.org/10.1117/12.898648.

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7

Jiang, Ziping, I. H. White, F. Laughton, R. V. Penty, M. W. McCall, and H. K. Tsang. "High power diffraction-limited ultrashort pulse generation from double tapered semiconductor laser diodes." In Semiconductor Lasers: Advanced Devices and Applications. Washington, D.C.: Optica Publishing Group, 1995. http://dx.doi.org/10.1364/slada.1995.tue.5.

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One promising way of generating high power diffraction-limited output from a semiconductor laser diode is to fabricate a double tapered device by varying the stripe width along the cavity, in order to produce wide stripes at the facets and a narrow stripe at the center. The narrow stripe near the middle of the cavity acts as a spatial filter to maintain a good quality spatially coherent output, whilst the wide stripes at the facets have the dual benefits of increasing the active volume (thus increasing optical power generation) and increasing the threshold power before catastrophic facet damage occurs. High power single lateral mode operation has already been demonstrated by using various tapered devices[l, 2, 3] and much work has been carried out on tapered semiconductor laser amplifiers [5, 4]. However, the nature of double tapered device in obtaining high power and diffraction limited output is still poorly understood and optimization in design is badly needed.
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8

Waltman, S., K. Petrov, U. Simon, L. Hollberg, F. Tittel, and R. Curl. "Tunable Infrared Source by Difference Frequency Mixing Diode lasers and Diode pumped YAG, and Application to Methane Detection." In Semiconductor Lasers: Advanced Devices and Applications. Washington, D.C.: Optica Publishing Group, 1995. http://dx.doi.org/10.1364/slada.1995.mb.4.

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Tremendous potential exists for the application of diode laser sources for high sensitivity detection of atoms and molecules. Some of the obvious applications include pollution monitoring, medical diagnostics, industrial process monitoring, and analytic and atmospheric chemistry applications. Room-temperature, tunable diode laser sources provide the opportunity for constructing compact, transportable instrumentation. Unfortunately the wavelengths of most of the atomic and molecular transitions are not directly accessible with commercially available, room-temperature diode lasers. In particular many of the important molecular transitions are in the mid-infrared spectral region. However, this spectral region is accessible with difference-frequency-generation (DFG) using visible and near-IR lasers.
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9

Ortolland, S. "4H-SiC SIT device for RF heating applications." In IEE Colloquium Advances in Semiconductor Devices. IEE, 1999. http://dx.doi.org/10.1049/ic:19990150.

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Olego, Diego. "Status and Prospects of Blue and Green Semiconductor Lasers." In Symposium on Optical Memory. Washington, D.C.: Optica Publishing Group, 1996. http://dx.doi.org/10.1364/isom.1996.ofb.2.

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The development of blue and green semiconductor injection lasers for applications in high density optical recording is attracting considerable attention. Other uses for these devices in areas of displays, printing, sensing and medical instrumentation are also being envisioned. Two direct band gap semiconductor material systems are well suited for light generation in the blue and green spectral region. They are the so-called wide band gap II-VI and IB-V semiconductors represented by ZnSe and GaN, respectively. The advancement of ZnSe and GaN lasers requires an intimate interplay between improving the materials qualities and developing specific laser processing technologies for these materials. Both types of lasers rely on advanced strained-layer growth by either molecular beam epitaxy or metal organic chemical vapor deposition.
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Звіти організацій з теми "Semiconductors - Advance Device Applications"

1

OPTICAL SOCIETY OF AMERICA WASHINGTON DC. Summaries of the Papers Presented at the Topical Meeting Semiconductor Lasers, Advanced Devices and Applications Held in Keystone, Colorado on 21-23 August 1995. Technical Digest Series. Volume 20. Fort Belvoir, VA: Defense Technical Information Center, August 1995. http://dx.doi.org/10.21236/ada306078.

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