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Готові списки джерел за темами / Semiconductors

Добірка наукової літератури з теми "Semiconductors"

Автор: Grafiati

Опубліковано: 4 червня 2021

Оновлено: 22 червня 2024

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Статті в журналах з теми "Semiconductors":

1

Gösele, Ulrich M., and Teh Y. Tan. "Point Defects and Diffusion in Semiconductors." MRS Bulletin 16, no. 11 (November 1991): 42–46. http://dx.doi.org/10.1557/s0883769400055512.

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Semiconductor devices generally contain n- and p-doped regions. Doping is accomplished by incorporating certain impurity atoms that are substitutionally dissolved on lattice sites of the semiconductor crystal. In defect terminology, dopant atoms constitute extrinsic point defects. In this sense, the whole semiconductor industry is based on controlled introduction of specific point defects. This article addresses intrinsic point defects, ones that come from the native crystal. These defects govern the diffusion processes of dopants in semiconductors. Diffusion is the most basic process associated with the introduction of dopants into semiconductors. Since silicon and gallium arsenide are the most widely used semiconductors for microelectronic and optoelectronic device applications, this article will concentrate on these two materials and comment only briefly on other semiconductors.A main technological driving force for dealing with intrinsic point defects stems from the necessity to simulate dopant diffusion processes accurately. Intrinsic point defects also play a role in critical integrated circuit fabrication processes such as ion-implantation or surface oxidation. In these processes, as well as during crystal growth, intrinsic point defects may agglomerate and negatively impact the performance of electronic or photovoltaic devices. If properly controlled, point defects and their agglomerates may also be used to accomplish positive goals such as enhancing device performance or processing yield.

2

Yang, Jin-Peng, Hai-Tao Chen, and Gong-Bin Tang. "Modeling of thickness-dependent energy level alignment at organic and inorganic semiconductor interfaces." Journal of Applied Physics 131, no. 24 (June 28, 2022): 245501. http://dx.doi.org/10.1063/5.0096697.

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We identify a universality in the Fermi level change of Van der Waals interacting semiconductor interfaces. We show that the disappearing of quasi-Fermi level pinning at a certain thickness of semiconductor films for both intrinsic (undoped) and extrinsic (doped) semiconductors over a wide range of bulk systems including inorganic, organic, and even organic–inorganic hybridized semiconductors. The Fermi level ( EF) position located in the energy bandgap was dominated by not only the substrate work function (Φsub) but also the thickness of semiconductor films, in which the final EF shall be located at the position reflecting the thermal equilibrium of semiconductors themselves. Such universalities originate from the charge transfer between the substrate and semiconductor films after solving one-dimensional Poisson's equation. Our calculation resolves some of the conflicting results from experimental results determined by using ultraviolet photoelectron spectroscopy (UPS) and unifies the general rule on extracting EF positions in energy bandgaps from (i) inorganic semiconductors to organic semiconductors and (ii) intrinsic (undoped) to extrinsic (doped) semiconductors. Our findings shall provide a simple analytical scaling for obtaining the “quantitative energy diagram” in the real devices, thus paving the way for a fundamental understanding of interface physics and designing functional devices.

3

Jiao, Yu Zhang, Xin Chao Wang, Tao Zhang, Ke Fu Yao, Zheng Jun Zhang, and Na Chen. "Magnetic Semiconductors from Ferromagnetic Amorphous Alloys." Materials Science Forum 1107 (December 6, 2023): 111–16. http://dx.doi.org/10.4028/p-jim2w4.

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Utilizing both charge and spin degrees of freedom of electrons simultaneously in magnetic semiconductors promises new device concepts by creating an opportunity to realize data processing, transportation and storage in one single spintronic device. Unlike most of the traditional diluted magnetic semiconductors, which obtain intrinsic ferromagnetism by adding magnetic elements to non-magnetic semiconductors, we attempt to develop room temperature magnetic semiconductors via a metal-semiconductor transition by introducing oxygen into three different ferromagnetic amorphous alloy systems. These magnetic semiconductors show different conduction types determined primarily by the compositions of the selected amorphous ferromagnetic alloy systems. These findings may pave a new way to realize magnetic semiconductor-based spintronic devices that work at room temperature.

4

Łukasiak, Lidia, and Andrzej Jakubowski. "History of Semiconductors." Journal of Telecommunications and Information Technology, no. 1 (June 26, 2023): 3–9. http://dx.doi.org/10.26636/jtit.2010.1.1015.

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The history of semiconductors is presented beginning with the first documented observation of a semiconductor effect (Faraday), through the development of the first devices (point-contact rectifiers and transistors, early field-effect transistors) and the theory of semiconductors up to the contemporary devices (SOI and multigate devices).

5

Xu, Yuanqing, Weibiao Wang, Zhexue Chen, Xinyu Sui, Aocheng Wang, Cheng Liang, Jinquan Chang, et al. "A general strategy for semiconductor quantum dot production." Nanoscale 13, no. 17 (2021): 8004–11. http://dx.doi.org/10.1039/d0nr09067k.

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6

WESSELS, B. W. "MAGNETORESISTANCE OF NARROW GAP MAGNETIC SEMICONDUCTOR HETEROJUNCTIONS." SPIN 03, no. 04 (December 2013): 1340011. http://dx.doi.org/10.1142/s2010324713400110.

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Narrow gap III–V semiconductors have been investigated for semiconductor spintronics. By alloying these semiconductors with manganese magnetic semiconductors result. Large magnetoresistance (MR) effects have been observed in narrow gap magnetic semiconductor p–n heterojunctions. The MR which is positive is attributed to spin selective carrier scattering. For an InMnAs / InAs heterojunction a diode MR of 2680% is observed at room temperature and high magnetic fields. This work indicates that highly spin-polarized magnetic semiconductor heterojunctions can be realized that operate at room temperature. Devices based on the MR include spin diodes and bipolar magnetic junction transistors. We utilize the diode MR states to create a binary logic family.

7

Sulaiman, Khaulah, Zubair Ahmad, Muhamad Saipul Fakir, Fadilah Abd Wahab, Shahino Mah Abdullah, and Zurianti Abdul Rahman. "Organic Semiconductors: Applications in Solar Photovoltaic and Sensor Devices." Materials Science Forum 737 (January 2013): 126–32. http://dx.doi.org/10.4028/www.scientific.net/msf.737.126.

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Organic semiconductor-based solar photovoltaic cells and sensors are scalable, printable, solution processable, bendable and light-weight. Furthermore, organic semiconductors require low energy fabrication process, hence can be fabricated at low cost as light-weight solar cells and sensors, coupled with the ease of processing, as well as compatibility, with flexible substrates. Organic semiconductors have been identified as a fascinating class of novel semiconductors that have the electrical and optical properties of metals and semiconductors. The continuous demand to improve the properties of organic semiconductors raises the quest for a deep understanding of fundamental issues and relevant electronic processes. Organic semiconductor thin film is sandwiched between two metal electrodes of indium tin oxide (ITO) and aluminum to form organic photovoltaic solar cell. Several types of organic semiconductors have been utilized as the photoactive layer in the solution processable organic solar cells. The performance of the fabricated solar cells can be improved by dissolving the material in the right choice of solvent, annealing of organic thin film, slowly forming the thin film and introducing an infra-red absorbance layer. Besides, organic semiconductor-based sensors can be fabricated utilizing either in a sandwidch type or planar type device. Some of these techniques and the experimental results are presented.

8

Tang, Minghao. "Characteristics, application and development trend of the third-generation semiconductor." Applied and Computational Engineering 7, no. 1 (July 21, 2023): 41–46. http://dx.doi.org/10.54254/2755-2721/7/20230337.

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Various devices made of the third-generation semiconductor have been gradually applied to various fields with the rapid development of the third-generation semiconductor materials equipment, manufacturing technology, and device physics represented by SiC and GaN. Firstly, the characteristics of the third-generation semiconductors is analyzed in this paper. Compared with the first-generation and second-generation semiconductors, the third-generation semiconductor has a wider band gap width, higher breakdown electric field, higher thermal conductivity, higher electron saturation rate and more expensive price. Then this paper will talk about the application of the third-generation semiconductor. The third-generation semiconductor materials can be mainly used in three fields, which are photoelectric, microwave radio frequency and power electronics. In terms of the photoelectric aspect, this paper takes the blue LED as an example. The blue LED is produced because of the wide band gap of the third-generation semiconductor. In the microwave RF aspect, the paper takes the 5G communication system as an example. Third-generation semiconductors make the high-frequency, high-power devices needed for 5G communications systems. In the power electronics aspect, the paper cites new energy vehicles as an example. Third-generation semiconductor components have a number of features needed for new-energy vehicles. For example, third-generation semiconductors can work at high temperatures. Finally, this paper will introduce the development trend of it. In the future, larger wafers will become mainstream. The third-generation semiconductors will be used in more fields. In addition, the new material systems will gradually mature.

9

Kumar, Anoop. "PRESENT STATUS OF SEMICONDUCTOR INDUSTRY IN INDIA and IT’S FUTURE PROSPECTS." SCHOLARLY RESEARCH JOURNAL FOR INTERDISCIPLINARY STUDIES 9, no. 68 (October 31, 2021): 16095–100. http://dx.doi.org/10.21922/srjis.v9i68.10004.

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Semiconductor is now an inseparable part of almost all sectors. Nowadays semiconductors or chips / integrated circuits (ICs) are the lifeblood of all digital Products. Industry estimates are that India’s demand for semi - conductor goods will reach US $ 400 billion by FY 2025. Taiwan’s TSMC and South Korea’s Samsung manufacture as much as 70% of the world’s semiconductors. America only makes about 10% of the chips it uses. According to Global data, the semiconductor industry is facing an unprecedentad supply shortage since the end of the year 2019 due to unprecedented demand growth. The government’s plan to promote Semiconductor manufacturing may have a bright future for Indian semiconductor Industry. The government will seek to incentivise startups to design and make semiconductors. India imported $ 3.14 bn in semiconductor Devices in 2019. Semiconductor world market has to grow by $ 90.80 bn during 2020 - 2024. India can take it’s pie in this opportunity. India has to develop an ecosystem. Capital expenditure is required to expand production to address the rising chip demand. Setting up a new foundry can cost anywhere around $ 15 bn - $ 20 bn. Amid challenges Technology influx such as artificial intelligence, 5G wireless, IOT and cloud computing will remain key factors for rampant growth of semiconductors Industry in India.

10

Khan, Arif, and Atanu Das. "Diffusivity-Mobility Relationship for Heavily Doped Semiconductors with Non-Uniform Band Structures." Zeitschrift für Naturforschung A 65, no. 10 (October 1, 2010): 882–86. http://dx.doi.org/10.1515/zna-2010-1017.

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A general relationship between the diffusivity and the mobility in degenerate semiconductors with non-uniform energy band structures has been presented. The relationship is general enough to be applicable to both non-degenerate and degenerate semiconductors. It is suitable for the study of electrical transport in heavily doped semiconductors and semiconductor devices.

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Дисертації з теми "Semiconductors":

1

Hong, Sang Jeen. "Real-time malfunction diagnosis and prognosis of reactive ion etching using neural networks." Diss., Available online, Georgia Institute of Technology, 2004:, 2003. http://etd.gatech.edu/theses/available/etd-04082004-180227/unrestricted/hong%5Fsang%5Fj%5F200312%5Fphd.pdf.

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2

Liu, Jia. "Optical spectroscopic study of GaAs with dilute nitrogen doping /." View Abstract or Full-Text, 2002. http://library.ust.hk/cgi/db/thesis.pl?PHYS%202002%20LIU.

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3

Park, Seung-Han. "Excitonic optical nonlinearities in semiconductors and semiconductor microstructures." Diss., The University of Arizona, 1988. http://hdl.handle.net/10150/184551.

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This dissertation describes the study of excitonic optical nonlinearities in semiconductors and semiconductor microstructures. The main emphasis is placed on the evolution of optical nonlinearities as one goes from bulk to quantum-confined structures. Included are experimental studies of molecular-beam-epitaxially-grown bulk GaAs and ZnSe, GaAs/AlGaAs multiple-Quantum-Wells (MQW's), and finally, quantum-confined CdSe-doped glasses. The microscopic origins and magnitudes of the optical nonlinearities of bulk GaAs and ZnSe were investigated and the exciton recovery time in ZnSe was measured. A comparison with a plasma theory indicates that in GaAs, band filling and screening of the continuum-state Coulomb enhancement are the most efficient mechanisms, while in ZnSe, exciton screening and broadening are the dominating mechanism for the nonlinearity. The maximum nonlinear index per excited electron-hole pair of ZnSe at room temperature is comparable to that of bulk GaAs and the exciton recovery times are of the order of 100 ps or less. A systematic study of the dependence of the optical nonlinearities on quantum well thickness for GaAs/AlGaAs MQWs and the results of nonlinear optical switching and gain in a 58 A GaAs/AlGaAs MQW are reported and discussed. The maximum change in the refractive index is greatest for the MQWs with the smallest well size and decreases with increasing well size, reaching a minimum for bulk GaAs. The maximum index change per photoexcited carrier increases by a factor of 3 as the well size decreases from bulk to 76 A MQW. A differential energy gain of 0.2 and the contrast of 4 are measured for a 58 MQW using 3 ns laser pulses. The linear and nonlinear optical properties of CdSe semiconductor microcrystallites grown under different heat treatments in borosilicate glasses are investigated. Pump-probe spectroscopic techniques and interferometric techniques were employed to study size quantization effects in these microcrystallites (quantum dots). Nonlinear optical properties due to the transitions between quantum confined electron and hole states are reported for low temperature and room temperature. A relatively large homogeneous linewidth is observed. Single beam saturation experiments for quantum confined samples were performed to study the optical nonlinearities as a function of microcrystallite size. Results indicate that the saturation intensity is larger for smaller size quantum dots.

4

Mardikar, Yogesh Mukesh. "Energy analysis, diagnostics, and conservation in semiconductor manufacturing." Morgantown, W. Va. : [West Virginia University Libraries], 2004. https://etd.wvu.edu/etd/controller.jsp?moduleName=documentdata&jsp%5FetdId=3748.

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Thesis (M.S.)--West Virginia University, 2004.
Title from document title page. Document formatted into pages; contains viii, 152 p. : ill. (some col.). Includes abstract. Includes bibliographical references (p. 106-108).

5

Ramamurthi, Vikram. "Analysis of production control methods for semiconductor research and development fabs using simulation /." Link to online version, 2004. https://ritdml.rit.edu/dspace/handle/1850/938.

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6

Peleckis, Germanas. "Studies on diluted oxide magnetic semiconductors for spin electronic applications." Access electronically, 2006. http://www.library.uow.edu.au/adt-NWU/public/adt-NWU20070821.145447/index.html.

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7

Newson, D. J. "Electronic transport in III-V semiconductors and semiconductor devices." Thesis, University of Cambridge, 1986. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.382242.

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8

Calhoun, Kenneth Harold. "Thin film compound semiconductor devices for photonic interconnects." Diss., Georgia Institute of Technology, 1993. http://hdl.handle.net/1853/15478.

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9

Ma, Cliff Liewei. "Modeling of bipolar power semiconductor devices /." Thesis, Connect to this title online; UW restricted, 1994. http://hdl.handle.net/1773/6046.

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10

Peng, Harry W. "The effects of stress on gallium arsenide device characteristics." Thesis, University of British Columbia, 1988. http://hdl.handle.net/2429/28584.

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For VLSI applications, it is essential to have consistent device characteristics for devices fabricated on different fabrication runs, on different wafers, and especially across a single wafer. MESFETs fabricated on GaAs have been found to have an orientation dependence in their threshold voltage and other characteristics. For MESFETs with gate length less than 2 μm, changing the device orientation can so significantly alter the device characteristics that it must be considered during the transistor design stage. The causes for the orientation dependence in the device characteristics have been suggested to be the piezoelectric property of GaAs and stress in the substrate. Stress produced by the encapsulating dielectric film generates a polarization charge density in the substrate. If the magnitude of the polarization charge density is large enough to alter the channel doping profile, then the device characteristics are changed. In this thesis, the effects of stress on GaAs MESFET device characteristics were studied by modelling and experimental works. In the modelling part, polarization charge densities under the gate of an encapsulated MESFET were calculated by using the so called distributed force model and the edge concentrated model. The distributed force model is a much better model because it describes more realistically the stress distribution in the film and in the substrate. It should provide a much more accurate calculation of the induced polarization charge density. The results show that the polarizarition charge densities calculated by the two models have similar distribution pattern, but the magnitudes are very different. With an identical set of conditions, a much larger polarization charge density is predicted by the edge concentrated model. In addition, the distributed force model distinguishes different films by a "hardness" value, based on their elastic property, whereas the edge concentrated model does not. A film with a larger "hardness" value is predicted to generate a larger polarization charge density. Two types of film were considered, SiO₂ and Si₃N₄. Using bulk film characteristics, the calculations showed that Si0₂ film is "harder" than Si₃N₄ film. If an equal built-in stress value is assumed, then a larger polarization charge density is predicted for Si0₂ than for Si₃N₄ encapsulated substrates. In the experimental part, stress was applied to test devices by bending strips of GaAs wafers in a cantilever configuration. MESFETs tested were oriented in the [011] or the [011̅] direction. Both static stress and time-varying stress were applied. In the statics stress experiment, the changes in the barrier height and the C-V profile were measured. It was found that, with equal stress applied, Schottky barriers with a larger ideality factor showed a larger change in the barrier height. In the time-varying stress experiment, attempts were made to measure the effect of the polarization charge density on device characteristics by measuring changes in the drain-source current.
Applied Science, Faculty of
Electrical and Computer Engineering, Department of
Graduate

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Книги з теми "Semiconductors":

1

Schubert, E. Fred. Doping in III-V semiconductors. Cambridge [England]: Cambridge University Press, 1993.

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2

Vavilov, V. S., and N. A. Ukhin. Radiation Effects in Semiconductors and Semiconductor Devices. Boston, MA: Springer US, 1995. http://dx.doi.org/10.1007/978-1-4684-9069-5.

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3

Shah, Jagdeep. Ultrafast Spectroscopy of Semiconductors and Semiconductor Nanostructures. Berlin, Heidelberg: Springer Berlin Heidelberg, 1999. http://dx.doi.org/10.1007/978-3-662-03770-6.

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4

Shah, Jagdeep. Ultrafast Spectroscopy of Semiconductors and Semiconductor Nanostructures. Berlin, Heidelberg: Springer Berlin Heidelberg, 1996. http://dx.doi.org/10.1007/978-3-662-03299-2.

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5

Shah, J. Ultrafast spectroscopy of semiconductors and semiconductor nanostructures. 2nd ed. Berlin: Springer Verlag, 1999.

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6

Shah, Jagdeep. Ultrafast spectroscopy of semiconductors and semiconductor nanostructures. Berlin: Springer, 1996.

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7

Vavilov, V. S. Radiation Effects in Semiconductors and Semiconductor Devices. Boston, MA: Springer US, 1995.

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8

Shah, J. Ultrafast spectroscopy of semiconductors and semiconductor nanostructures. Berlin: Springer, 1996.

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9

Levinshteĭn, M. E. Breakdown phenomena in semiconductors and semiconductor devices. Singapore: World Scientific, 2005.

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10

Madelung, O., ed. Semiconductors. Berlin, Heidelberg: Springer Berlin Heidelberg, 1992. http://dx.doi.org/10.1007/978-3-662-00464-7.

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Частини книг з теми "Semiconductors":

1

Messerschmidt, Ulrich. "Semiconductors." In Dislocation Dynamics During Plastic Deformation, 207–20. Berlin, Heidelberg: Springer Berlin Heidelberg, 2010. http://dx.doi.org/10.1007/978-3-642-03177-9_6.

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2

Wesolowski, Robert A., Anthony P. Wesolowski, and Roumiana S. Petrova. "Semiconductors." In The World of Materials, 49–52. Cham: Springer International Publishing, 2020. http://dx.doi.org/10.1007/978-3-030-17847-5_7.

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3

Hummel, Rolf E. "Semiconductors." In Electronic Properties of Materials, 87–119. Berlin, Heidelberg: Springer Berlin Heidelberg, 1985. http://dx.doi.org/10.1007/978-3-662-02424-9_8.

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4

Ibach, Harald, and Hans Lüth. "Semiconductors." In Advanced Texts in Physics, 391–482. Berlin, Heidelberg: Springer Berlin Heidelberg, 2003. http://dx.doi.org/10.1007/978-3-662-05342-3_12.

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5

Fahlman, Bradley D. "Semiconductors." In Materials Chemistry, 239–347. Dordrecht: Springer Netherlands, 2011. http://dx.doi.org/10.1007/978-94-007-0693-4_4.

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6

Garcia, Narciso, Arthur Damask, and Steven Schwarz. "Semiconductors." In Physics for Computer Science Students, 437–63. New York, NY: Springer New York, 1998. http://dx.doi.org/10.1007/978-1-4612-1616-2_25.

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7

Hummel, Rolf E. "Semiconductors." In Electronic Properties of Materials, 98–154. Dordrecht: Springer Netherlands, 1993. http://dx.doi.org/10.1007/978-94-017-4914-5_8.

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8

Watson, John. "Semiconductors." In Mastering Electronics, 69–80. London: Macmillan Education UK, 1986. http://dx.doi.org/10.1007/978-1-349-08533-0_6.

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9

Warnes, Lionel. "Semiconductors." In Electronic and Electrical Engineering, 128–35. London: Macmillan Education UK, 1998. http://dx.doi.org/10.1007/978-1-349-15052-6_6.

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10

Hummel, Rolf E. "Semiconductors." In Electronic Properties of Materials, 104–65. Berlin, Heidelberg: Springer Berlin Heidelberg, 2001. http://dx.doi.org/10.1007/978-3-642-86538-1_8.

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Тези доповідей конференцій з теми "Semiconductors":

1

Yin, X., Xinxin Guo, Fred H. Pollak, G. D. Pettit, Jerry M. Woodall, and Eun-He Cirlin. "Electromodulation of semiconductors and semiconductor microstructures utilizing a new contactless technique." In Semiconductors '92, edited by Orest J. Glembocki. SPIE, 1992. http://dx.doi.org/10.1117/12.60452.

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2

Vina, Luis, Miquel Garriga, and Manuel Cardona. "Spectral ellipsometry of semiconductors and semiconductor structures." In Semi - DL tentative, edited by Fred H. Pollak, Manuel Cardona, and David E. Aspnes. SPIE, 1990. http://dx.doi.org/10.1117/12.20842.

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3

Menendez, Jose. "Resonance Raman scattering in semiconductors and semiconductor microstructures." In Semi - DL tentative, edited by Fred H. Pollak, Manuel Cardona, and David E. Aspnes. SPIE, 1990. http://dx.doi.org/10.1117/12.20855.

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4

Mead, Carver. "Semiconductors." In ACM97: The Next 50 Years of Computing. New York, New York, USA: ACM Press, 1997. http://dx.doi.org/10.1145/2723279.2723281.

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5

Kondo, Takashi, Kaoru Morita, and Ryoichi Ito. "Second-Order Nonlinear Optical Properties of Wide-Bandgap Semiconductors." In Nonlinear Optics: Materials, Fundamentals and Applications. Washington, D.C.: Optica Publishing Group, 1996. http://dx.doi.org/10.1364/nlo.1996.nthe.23.

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There have been growing interest in III-V semiconductors as promising nonlinear optical materials for frequency conversion devices. These devices are based on quasi-phase-matching that is achieved by spatially modulating large quadratic optical nonlinearities of semiconductors [1–5]. In order to exploit the large nonlinearities of semiconductor epitaxial films, we have developed two methods to determine the nonlinear optical coefficients of thin films by reflected second-harmonic measurements [6,7], In this paper, we will present nonlinear optical properties of wide-bandgap semiconductors, A1P, ion-implanted GaP and SiC, characterized by the reflected second-harmonic techniques.

6

Lindberg, Markus, Sunghyuck An, Stephan W. Koch, and Murray Sargent. "Pump field modulation of resonance fluorescence in semiconductors." In OSA Annual Meeting. Washington, D.C.: Optica Publishing Group, 1988. http://dx.doi.org/10.1364/oam.1988.wr2.

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We investigate the resonance fluorescence spectrum of a bulk semiconductor subject to an injection current and an arbitrarily intense electromagnetic wave. We assume that the electronhole system is in quasiequilibrium due to the rapid carrier-carrier intraband scattering. The analysis is based on the generalized Bloch equations1 for semiconductors. Although the fast carrier scattering heavily damps the electronic coherence, it nevertheless allows the medium to follow adiabatically the relatively slowly varying field fluctuations. As a consequence, the resonance fluorescence spectra reveal asymmetric dips generated by pump scattering off carrier-density pulsations induced by the interference between the pump and vacuum mode. Similar to the two-level resonance fluorescence and probe absorption, the semiconductor probe absorption coefficient equals the difference between the resonance fluorescence and reabsorption coefficients. The results are important for nonlinear semiconductor spectroscopy and semiconductor laser instabilities.

7

Nees, John A. "Metal-semiconductor-metal photodetectors on low-temperature-grown semiconductors." In OE/LASE '94, edited by Gail J. Brown, Didier J. Decoster, Joanne S. LaCourse, Yoon-Soo Park, Kenneth D. Pedrotti, and Susan R. Sloan. SPIE, 1994. http://dx.doi.org/10.1117/12.175264.

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8

Podlesnik, D. V., H. H. Gilgen, C. J. Chen, and R. M. Osgood. "Effects of Optical Properties on Wet Etching of Semiconductors." In Microphysics of Surfaces, Beams, and Adsorbates. Washington, D.C.: Optica Publishing Group, 1985. http://dx.doi.org/10.1364/msba.1985.wd3.

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Many laser microchemical processes, for example, metal photodeposition and semiconductor annealing, are influenced by a surface electromagnetic field which results from the interaction of the incident light with the surface. This effect has not been extensively documented in laser etching of semiconductors. In this talk, we will show that such effects can play an important role in determining the etch profile and surface structure obtained from wet etching of semiconductors. In particular, the formation of surface ripples and the fabrication of high-aspect-ratio via holes will be discussed.

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"Semiconductors. Optics." In Proceedings of the Conference “Kadanoff-Baym Equations: Progress and Perspectives for Many-Body Physics”. WORLD SCIENTIFIC, 2000. http://dx.doi.org/10.1142/9789812793812_others04.

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Anfinrud, P. A., T. P. Causgrove, and W. S. Struve. "Optical Pump-Probe Spectroscopy of Dyes on Surfaces: Ground-State Recovery of Rhodamine 640 on ZnO and Fused Quartz." In International Conference on Ultrafast Phenomena. Washington, D.C.: Optica Publishing Group, 1986. http://dx.doi.org/10.1364/up.1986.we4.

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In recent years, time-resolved fluorescence spectroscopy has been investigated for dyes adsorbed onto fused quartz [1] and semiconductors [2,3]. On quartz, the monomer fluorescence dynamics are nonexponential and tend to dominated by excitation trapping by dye aggregates; the phenomenological lifetime measured in the limit of low coverage is often comparable to the fluorescence lifetime observed in solution [1]. On ultraviolet-bandgap semiconductors like TiO2, much more rapid fluorescence decay is typically found [2,3], even at low coverage. The channel responsible for this accelerated decay on semiconductors is widely believed to be electron injection into the semiconductor space-charge region. However, the photocurrent efficiencies of liquid-junction solar cells with dye-coated single-crystal semiconductor photoelectrodes are generally small, and the possibility exists that dye electronic excitation may instead decay rapidly and nonradiatively into semiconductor modes [3]. To differentiate between these decay mechanisms, we have done optical pump-probe measurements of ground-state recovery dynamics of rhodamine 640 adsorbed on fused quartz and on ZnO at submonolayer coverages.

Звіти організацій з теми "Semiconductors":

1

Hunt, Will, Saif Khan, and Dahlia Peterson. China’s Progress in Semiconductor Manufacturing Equipment. Center for Security and Emerging Technology, March 2021. http://dx.doi.org/10.51593/20190018.

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To reduce its dependence on the United States and its allies for semiconductors, China is building domestic semiconductor manufacturing facilities by importing U.S., Japanese, and Dutch semiconductor manufacturing equipment. In the longer term, it also hopes to indigenize this equipment to replace imports. U.S. and allied policy responses to China’s efforts will significantly affect its prospects for success in this challenging task.

2

Khan, Saif M. U.S. Semiconductor Exports to China: Current Policies and Trends. Center for Security and Emerging Technology, October 2020. http://dx.doi.org/10.51593/20200039.

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The United States has long used export controls to prevent the proliferation of advanced semiconductors and the inputs necessary to produce them. With Beijing building up its own chipmaking industry, the United States has begun tightening restrictions on exports of semiconductor manufacturing equipment to China. This brief provides an overview of U.S. semiconductor export control policies and analyzes the impacts of those policies on U.S.-China trade.

3

Khan, Saif M., Alexander Mann, and Dahlia Peterson. The Semiconductor Supply Chain: Assessing National Competitiveness. Center for Security and Emerging Technology, January 2021. http://dx.doi.org/10.51593/20190016.

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Semiconductors are a key component in fueling scientific progress, promoting economic advancement, and ensuring national security. This issue brief summarizes each component of the semiconductor supply chain and where the United States and its allies possess the greatest leverage. A related policy brief, “Securing Semiconductor Supply Chains,” recommends policy actions to ensure the United States maintains this leverage and uses it to promote the beneficial use of emerging technologies, such as artificial intelligence.

4

Crawford, M. H., W. W. Chow, A. F. Wright, S. R. Lee, E. D. Jones, J. Han, and R. J. Shul. Wide-Bandgap Compound Semiconductors to Enable Novel Semiconductor Devices. Office of Scientific and Technical Information (OSTI), April 1999. http://dx.doi.org/10.2172/5901.

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5

Lazonick, William, and Matt Hopkins. Why the CHIPS Are Down: Stock Buybacks and Subsidies in the U.S. Semiconductor Industry. Institute for New Economic Thinking Working Paper Series, September 2021. http://dx.doi.org/10.36687/inetwp165.

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The Semiconductor Industry Association (SIA) is promoting the Creating Helpful Incentives to Produce Semiconductors (CHIPS) for America Act, introduced in Congress in June 2020. An SIA press release describes the bill as “bipartisan legislation that would invest tens of billions of dollars in semiconductor manufacturing incentives and research initiatives over the next 5-10 years to strengthen and sustain American leadership in chip technology, which is essential to our country’s economy and national security.” On June 8, 2021, the Senate approved $52 billion for the CHIPS for America Act, dedicated to supporting the U.S. semiconductor industry over the next decade. As of this writing, the Act awaits approval in the House of Representatives. This paper highlights a curious paradox: Most of the SIA corporate members now lobbying for the CHIPS for America Act have squandered past support that the U.S. semiconductor industry has received from the U.S. government for decades by using their corporate cash to do buybacks to boost their own companies’ stock prices. Among the SIA corporate signatories of the letter to President Biden, the five largest stock repurchasers—Intel, IBM, Qualcomm, Texas Instruments, and Broadcom—did a combined $249 billion in buybacks over the decade 2011-2020, equal to 71 percent of their profits and almost five times the subsidies over the next decade for which the SIA is lobbying. In addition, among the members of the Semiconductors in America Coalition (SIAC), formed specifically in May 2021 to lobby Congress for the passage of the CHIPS for America Act, are Apple, Microsoft, Cisco, and Google. These firms spent a combined $633 billion on buybacks during 2011-2020. That is about 12 times the government subsidies provided under the CHIPS for America Act to support semiconductor fabrication in the United States in the upcoming decade. If the Congress wants to achieve the legislation’s stated purpose of promoting major new investments in semiconductors, it needs to deal with this paradox. It could, for example, require the SIA and SIAC to extract pledges from its member corporations that they will cease doing stock buybacks as open-market repurchases over the next ten years. Such regulation could be a first step in rescinding Securities and Exchange Commission Rule 10b-18, which has since 1982 been a major cause of extreme income inequality and loss of global industrial competitiveness in the United States.

6

Chinthavali, M. S. Wide-Bandgap Semiconductors. Office of Scientific and Technical Information (OSTI), November 2005. http://dx.doi.org/10.2172/886008.

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7

Brown, Gail J. Quantum Confined Semiconductors. Fort Belvoir, VA: Defense Technical Information Center, February 2015. http://dx.doi.org/10.21236/ada614123.

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Jonscher, Andrew K., and Mohammad A. Bari. Dielectric Spectroscopy of Semiconductors. Fort Belvoir, VA: Defense Technical Information Center, December 1988. http://dx.doi.org/10.21236/ada203457.

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9

Jonscher, Andrew K., and Mohammad A. Bari. Dielectric Spectroscopy of Semiconductors. Fort Belvoir, VA: Defense Technical Information Center, July 1988. http://dx.doi.org/10.21236/ada197992.

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10

Bao, Zhenan. High Performance Organic Semiconductors. Fort Belvoir, VA: Defense Technical Information Center, July 2012. http://dx.doi.org/10.21236/ada567136.

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