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Статті в журналах з теми "Semiconductor module"
Resutík, Patrik, and Slavomír Kaščák. "Compact 3 × 1 Matrix Converter Module Based on the SiC Devices with Easy Expandability." Applied Sciences 11, no. 20 (October 9, 2021): 9366. http://dx.doi.org/10.3390/app11209366.
Повний текст джерелаSeki, Kyoshiro, Yoshitaka Tsunekawa, Hiroshi Osada, Jun-Ichi Shida, and Koichi Murakami. "Multisensor module using magnetic semiconductor ferrite." Electronics and Communications in Japan (Part II: Electronics) 73, no. 4 (1990): 46–53. http://dx.doi.org/10.1002/ecjb.4420730406.
Повний текст джерелаYau, Chin Horng, Wen Ren Jong, and H. H. Wang. "Design and Analysis of SCARA Substrate Transfer Robot for Semiconductor and FPD Processing Cluster Tools." Materials Science Forum 505-507 (January 2006): 331–36. http://dx.doi.org/10.4028/www.scientific.net/msf.505-507.331.
Повний текст джерелаWang, Yangang, Yibo Wu, Xiaoping Dai, Steve Jones, and Guoyou Liu. "Investigation of Automotive Power Semiconductor Module Operates at Elevated Cooling Temperature." Additional Conferences (Device Packaging, HiTEC, HiTEN, and CICMT) 2015, HiTEN (January 1, 2015): 000154–60. http://dx.doi.org/10.4071/hiten-session5-paper5_1.
Повний текст джерелаMorgan, Adam, Ankan De, Haotao Ke, Xin Zhao, Kasunaidu Vechalapu, Douglas C. Hopkins, and Subhashish Bhattacharya. "A Robust, Composite Packaging Approach for a High Voltage 6.5kV IGBT and Series Diode." International Symposium on Microelectronics 2015, no. 1 (October 1, 2015): 000359–64. http://dx.doi.org/10.4071/isom-2015-wp17.
Повний текст джерелаAnzai, Takeshi, Yoshinori Murakami, Shinji Sato, Hidekazu Tanisawa, Kohei Hiyama, Hiroki Takahashi, Fumiki Kato, and Hiroshi Sato. "Warpage Evaluation of High-Temperature Sandwich-Structured Power Module for SiC Power Semiconductor Devices." Journal of Microelectronics and Electronic Packaging 12, no. 3 (July 1, 2015): 153–60. http://dx.doi.org/10.4071/imaps.464.
Повний текст джерелаXu Dan, 徐丹, 黄雪松 Huang Xuesong, 姜梦华 Jiang Menghua, 惠勇凌 Hui Yongling, 雷訇 Lei Hong, and 李强 Li Qiang. "500 W fiber-coupled semiconductor laser module." Infrared and Laser Engineering 45, no. 6 (2016): 0606003. http://dx.doi.org/10.3788/irla201645.0606003.
Повний текст джерелаAbdesselam, A., P. J. Adkin, P. P. Allport, J. Alonso, L. Andricek, F. Anghinolfi, A. A. Antonov, et al. "The ATLAS semiconductor tracker end-cap module." Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment 575, no. 3 (June 2007): 353–89. http://dx.doi.org/10.1016/j.nima.2007.02.019.
Повний текст джерелаEl-Awady, K., C. D. Schaper, and T. Kailath. "Programmable Thermal Processing Module for Semiconductor Substrates." IEEE Transactions on Control Systems Technology 12, no. 4 (July 2004): 493–509. http://dx.doi.org/10.1109/tcst.2004.824775.
Повний текст джерелаParker-Allotey, Nii Adotei, Dean P. Hamilton, Olayiwola Alatise, Michael R. Jennings, Philip A. Mawby, Rob Nash, and Rob Magill. "Improved Energy Efficiency Using an IGBT/SiC-Schottky Diode Pair." Materials Science Forum 717-720 (May 2012): 1147–50. http://dx.doi.org/10.4028/www.scientific.net/msf.717-720.1147.
Повний текст джерелаДисертації з теми "Semiconductor module"
Halindintwali, Sylvain. "A study of hydrogenated nanocrystalline silicon thin films deposited by hot-wire chemical vapour deposition (HWCVD)." Thesis, University of the Western Cape, 2005. http://etd.uwc.ac.za/index.php?module=etd&.
Повний текст джерелаwire chemical vapour deposition (HWCVD) technique and have been characterised for their performance. It is noticed that 
hydrogenated nanocrystalline silicon is similar in some aspects (mainly optical) to its counterpart amorphous silicon actually used as the intrinsic layer in the photovoltaic industry. Substantial differences between the two materials have been found however in their respective structural and electronic properties.
We show that hydrogenated nanocrystalline silicon retains good absorption coefficients known for amorphous silicon in the visible region. The order improvement and a reduced content of the bonded hydrogen in the films are linked to their good stability. We argue that provided a moderate hydrogen dilution ratio in the monosilane gas and efficient process pressure in the deposition chamber, intrinsic hydrogenated nanocrystalline silicon with photosensitivity better than 102 and most importantly resistant to the Staebler Wronski effect (SWE) can be produced.
This work explores the optical, structural and electronic properties of this promising material whose study &ndash
samples have been exclusively produced in the HWCVD reactors based in the Solar Cells laboratory of the Physics department at the University of the Western Cape.
Mayne, Anna Louise. "A study of ATLAS semiconductor tracker module distortions and event cleaning with tracking." Thesis, University of Sheffield, 2011. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.554383.
Повний текст джерелаGrummel, Brian. "HIGH TEMPERATURE PACKAGING FOR WIDE BANDGAP SEMICONDUCTOR DEVICES." Master's thesis, University of Central Florida, 2008. http://digital.library.ucf.edu/cdm/ref/collection/ETD/id/3200.
Повний текст джерелаM.S.E.E.
School of Electrical Engineering and Computer Science
Engineering and Computer Science
Electrical Engineering MSEE
Filsecker, Felipe. "Characterization and evaluation of a 6.5-kV silicon carbide bipolar diode module." Doctoral thesis, Saechsische Landesbibliothek- Staats- und Universitaetsbibliothek Dresden, 2017. http://nbn-resolving.de/urn:nbn:de:bsz:14-qucosa-217848.
Повний текст джерелаPoller, Tilo. "Thermal and thermal-mechanical simulation for the prediction of fatigue processes in packages for power semiconductor devices." Doctoral thesis, Universitätsbibliothek Chemnitz, 2015. http://nbn-resolving.de/urn:nbn:de:bsz:ch1-qucosa-154320.
Повний текст джерелаFür die Entwicklung von Umrichtern ist die Kenntnis über die Zuverlässigkeit der Leistungselektronik ein wichtiges Kernthema. Insbesondere für Offshore-Anwendungen ist das Wissen über die stattfindenden Ermüdungsprozesse und die Abschätzung der zu erwartenden Lebensdauer der Bauteile essentiell. Hierfür hat sich die Simulation als ein wichtiges Werkzeug für die Entwicklung und Lebensdauerbewertung von leistungselektronischen Anlagen etabliert. In der folgenden Arbeit wird das thermische und das thermisch-mechanische Verhalten der Leistungselektronik mittels Simulationen untersucht. Hierzu wird ein Vergleich zwischen verschiedenen thermischen Modellen für Leistungsbauelemente durchgeführt. Schwerpunkt ist die Beschreibung der thermischen Kopplung zwischen den Chips und deren Einfluss auf die Lebensdauerabschätzung. Ein weiterer Schwerpunkt ist das Leistungsmodul, welches sich als ein Standardgehäuse etabliert hat. Dazu wird erklärt, wie die Variation der Einschaltzeit im aktiven Lastwechseltest den Fehlermodus dieses Gehäusetyps beeinflusst. Weiterhin wird untersucht, wie SiC als Leistungshalbleiter und DAB als Substrat die Zuverlässigkeit beein- flusst. Der Press-Pack ist für Hochleistungsapplikationen von hohem Interesse, da dieses Gehäuse im elektrischen Fehlerfall ohne äußere Unterstützung kurzschliesst. Jedoch ist das Wissen über diese Gehäusetechnologie unter aktiven Lastwechselbedingungen sehr limitiert. Mit Hilfe von Simulationen wird dieses Verhalten untersucht und mögliche Schwachpunkte abgeleitet. Am Ende der Arbeit werden Möglichkeiten untersucht, wie Mithilfe von FEM Simulationen die Lebensdauer von Leistungsmodulen evaluiert werden kann
Poller, Tilo. "Thermal and thermal-mechanical simulation for the prediction of fatigue processes in packages for power semiconductor devices." Doctoral thesis, Universitätsverlag der Technischen Universität Chemnitz, 2014. https://monarch.qucosa.de/id/qucosa%3A20135.
Повний текст джерелаFür die Entwicklung von Umrichtern ist die Kenntnis über die Zuverlässigkeit der Leistungselektronik ein wichtiges Kernthema. Insbesondere für Offshore-Anwendungen ist das Wissen über die stattfindenden Ermüdungsprozesse und die Abschätzung der zu erwartenden Lebensdauer der Bauteile essentiell. Hierfür hat sich die Simulation als ein wichtiges Werkzeug für die Entwicklung und Lebensdauerbewertung von leistungselektronischen Anlagen etabliert. In der folgenden Arbeit wird das thermische und das thermisch-mechanische Verhalten der Leistungselektronik mittels Simulationen untersucht. Hierzu wird ein Vergleich zwischen verschiedenen thermischen Modellen für Leistungsbauelemente durchgeführt. Schwerpunkt ist die Beschreibung der thermischen Kopplung zwischen den Chips und deren Einfluss auf die Lebensdauerabschätzung. Ein weiterer Schwerpunkt ist das Leistungsmodul, welches sich als ein Standardgehäuse etabliert hat. Dazu wird erklärt, wie die Variation der Einschaltzeit im aktiven Lastwechseltest den Fehlermodus dieses Gehäusetyps beeinflusst. Weiterhin wird untersucht, wie SiC als Leistungshalbleiter und DAB als Substrat die Zuverlässigkeit beein- flusst. Der Press-Pack ist für Hochleistungsapplikationen von hohem Interesse, da dieses Gehäuse im elektrischen Fehlerfall ohne äußere Unterstützung kurzschliesst. Jedoch ist das Wissen über diese Gehäusetechnologie unter aktiven Lastwechselbedingungen sehr limitiert. Mit Hilfe von Simulationen wird dieses Verhalten untersucht und mögliche Schwachpunkte abgeleitet. Am Ende der Arbeit werden Möglichkeiten untersucht, wie Mithilfe von FEM Simulationen die Lebensdauer von Leistungsmodulen evaluiert werden kann.
Janík, Daniel. "Provozní parametry LED světelných zdrojů." Master's thesis, Vysoké učení technické v Brně. Fakulta elektrotechniky a komunikačních technologií, 2017. http://www.nusl.cz/ntk/nusl-316394.
Повний текст джерелаGrummel, Brian. "Design and Characterization of High Temperature Packaging for Wide-Bandgap Semiconductor Devices." Doctoral diss., University of Central Florida, 2012. http://digital.library.ucf.edu/cdm/ref/collection/ETD/id/5231.
Повний текст джерелаPh.D.
Doctorate
Electrical Engineering and Computer Science
Engineering and Computer Science
Electrical Engineering
Dchar, Ilyas. "Conception d’un module d’électronique de puissance «Fail-to-short» pour application haute tension." Thesis, Lyon, 2017. http://www.theses.fr/2017LYSEI042/document.
Повний текст джерелаThe reliability and endurance of high power converters are paramount for future HVDC networks. Generally, module’s failure behavior can be classified as open-circuit failure and short-circuit failure. A module which fails to an open circuit is considered as fatal for applications requiring series connection. Especially, in some HVDC application, modules must be designed such that when a failure occurs, the failed module still able to carry the load current by the formation of a stable short circuit. Such operation is referred to as short circuit failure mode operation. Currently, all commercially available power modules which offer a short circuit failure mode use silicon semiconductors. The benefits of SiC semiconductors prompts today the manufacturers and researchers to carry out investigations to develop power modules with Fail-to-short-circuit capability based on SiC dies. This represents a real challenge to replace silicon power module for high voltage applications in the future. The work presented in this thesis aims to design a SiC power module with failure to short-circuit failure mode capability. The first challenge of the research work is to define the energy leading to the failure of the SiC dies in order to define the activation range of the Fail-to-short mechanism. Then, we demonstrate the need of replacing the conventional interconnections (wire bonds) by massive contacts. Finally, an implementation is presented through a "half bridge" module with two MOSFETs
Guiheneuf, Vincent. "Approche multi-physique du vieillissement des matériaux pour application photovoltaïque." Thesis, Paris Est, 2017. http://www.theses.fr/2017PESC1091/document.
Повний текст джерелаThis thesis investigates the aging of photovoltaic (PV) modules based on crystalline silicon technology via a multi-material approach. The first objective is to determine the degradation mechanisms involved during the operation of the PV modules and thus to be able to propose technological solutions improving their durability. For this purpose, accelerated aging tests were carried out on the glass, the crystalline silicon PV cell and the PV mini-module composed of glass, a polymeric encapsulant and the silicon cell.Their functional properties are systematically evaluated and the follow-up of these indicators allows to define aging laws. In parallel, physicochemical characterizations are carried out to determine the degradation mechanisms of the different components of the module. The study of damp heat on glass throws into evidence a surface degradation with a hydration process of the silica network and a leaching phenomenon of the sodium which involves an increase of the glass transmittance. The PV cell exhibits a deterioration of the electrical performance and reflectance after UV radiation exposure due to a photo-oxidation process of the SiNx antireflection layer. It has also been established that high UV power can also promote a regeneration phenomenon of electrical performances. The aging of the mini-module under UV shows the phenomenon of photo-induced degradation (LID) generating a slight decrease in the electrical performance from the first exposure whereas the impact of damp heat on the electrical performance is null after 2000 hours
Книги з теми "Semiconductor module"
International, Semiconductor Data, ed. Power modules. Rolling Hills Estates, CA: SDI, 1990.
Знайти повний текст джерелаCorporation, Mitsubishi Electric. Mitsubishi semiconductors: Memories module : data book. Tokyo: Mitsubishi Electric Corporation, 1992.
Знайти повний текст джерелаCorporation, Mitsubishi Electric. Mitsubishi semiconductors 1994: Memories module (data book). Tokyo: Mitsubishi Electric Corporation, 1994.
Знайти повний текст джерелаInternational, Semikron, ed. Application manual power modules. Ilmenau: ISLE, 2000.
Знайти повний текст джерелаP, Colino Ronald, ed. Power electronic modules: Design and manufacture. Boca Raton: CRC Press, 2005.
Знайти повний текст джерелаBaranowski, Jerzy Hubert. Sekcyjne modele ładunkowe diod i tranzystorów bipolarnych. Warszawa: Wydawnictwa Politechniki Warszawskiej, 1985.
Знайти повний текст джерелаSnowden, Christopher M. Semiconductor device modelling. London, U.K: P. Peregrinus on behalf of the Institution of Electrical Engineers, 1988.
Знайти повний текст джерелаChristopher, Snowden, ed. Semiconductor device modelling. London: Springer-Verlag, 1989.
Знайти повний текст джерелаMarvin, Coughran William, ed. Semiconductors. New York: Springer-Verlag, 1994.
Знайти повний текст джерелаThe stationary semiconductor device equations. Wien: Springer-Verlag, 1986.
Знайти повний текст джерелаЧастини книг з теми "Semiconductor module"
Großmann, E., U. Hilbk, and K. Peters. "Thermal Tunable Minimized Semiconductor Laser-Module." In Micro System Technologies 90, 465–70. Berlin, Heidelberg: Springer Berlin Heidelberg, 1990. http://dx.doi.org/10.1007/978-3-642-45678-7_66.
Повний текст джерелаYagi, Atsushi. "Semiconductor Models." In Springer Monographs in Mathematics, 345–56. Berlin, Heidelberg: Springer Berlin Heidelberg, 2009. http://dx.doi.org/10.1007/978-3-642-04631-5_8.
Повний текст джерелаStrauch, Dieter. "MgO: Bulk and Shear Moduli." In Semiconductors, 45–55. Berlin, Heidelberg: Springer Berlin Heidelberg, 2017. http://dx.doi.org/10.1007/978-3-662-53620-9_11.
Повний текст джерелаFu, Ying. "Semiconductor Materials." In Physical Models of Semiconductor Quantum Devices, 1–66. Dordrecht: Springer Netherlands, 2014. http://dx.doi.org/10.1007/978-94-007-7174-1_1.
Повний текст джерелаChen, Li, and Michael Dreher. "Quantum Semiconductor Models." In Partial Differential Equations and Spectral Theory, 1–72. Basel: Springer Basel, 2011. http://dx.doi.org/10.1007/978-3-0348-0024-2_1.
Повний текст джерелаMarkowich, Peter A., Christian A. Ringhofer, and Christian Schmeiser. "Kinetic Transport Models for Semiconductors." In Semiconductor Equations, 3–82. Vienna: Springer Vienna, 1990. http://dx.doi.org/10.1007/978-3-7091-6961-2_2.
Повний текст джерелаSever, Michael. "Symmetric Forms of Energy — Momentum Transport Models." In Semiconductors, 365–76. New York, NY: Springer New York, 1994. http://dx.doi.org/10.1007/978-1-4613-8410-6_21.
Повний текст джерелаMarkowich, Peter A., Christian A. Ringhofer, and Christian Schmeiser. "From Kinetic to Fluid Dynamical Models." In Semiconductor Equations, 83–103. Vienna: Springer Vienna, 1990. http://dx.doi.org/10.1007/978-3-7091-6961-2_3.
Повний текст джерелаSu, P., and B. A. Unger. "Temperature Cycling Tests o Laser Modules." In Semiconductor Device Reliability, 363–78. Dordrecht: Springer Netherlands, 1990. http://dx.doi.org/10.1007/978-94-009-2482-6_21.
Повний текст джерелаSchenk, Andreas. "Metal-Semiconductor Contact." In Advanced Physical Models for Silicon Device Simulation, 252–80. Vienna: Springer Vienna, 1998. http://dx.doi.org/10.1007/978-3-7091-6494-5_4.
Повний текст джерелаТези доповідей конференцій з теми "Semiconductor module"
O'Neill, James A. "Infrared diagnostics for semiconductor process monitoring." In Process Module Metrology, Control and Clustering, edited by Cecil J. Davis, Irving P. Herman, and Terry R. Turner. SPIE, 1992. http://dx.doi.org/10.1117/12.56649.
Повний текст джерелаGottscho, Richard A., Matthew Vernon, Jeffrey A. Gregus, E. Yoon, K. P. Giapis, Todd R. Hayes, William S. Hobson, et al. "Light scattering methods for semiconductor process monitoring and control." In Process Module Metrology, Control and Clustering, edited by Cecil J. Davis, Irving P. Herman, and Terry R. Turner. SPIE, 1992. http://dx.doi.org/10.1117/12.56644.
Повний текст джерелаPoulin, M., S. Ayotte, C. Latrasse, Y. Painchaud, J. F. Cliche, A. Babin, M. Aubé, et al. "Compact narrow linewidth semiconductor laser module." In SPIE Defense, Security, and Sensing, edited by Mark Dubinskii and Stephen G. Post. SPIE, 2009. http://dx.doi.org/10.1117/12.818802.
Повний текст джерелаvan Os, C. F. A., and Brian N. Chapman. "In-situ monitoring of semiconductor wafer temperature using infrared interferometry." In Process Module Metrology, Control and Clustering, edited by Cecil J. Davis, Irving P. Herman, and Terry R. Turner. SPIE, 1992. http://dx.doi.org/10.1117/12.56657.
Повний текст джерелаViloria, Gregory, and Richard N. Savage. "Application of optical emission diagnostics and control related to semiconductor processing." In Process Module Metrology, Control and Clustering, edited by Cecil J. Davis, Irving P. Herman, and Terry R. Turner. SPIE, 1992. http://dx.doi.org/10.1117/12.56652.
Повний текст джерелаFan, Yingmin, Dandan Zhou, Hongtao Chong, Bin Zhao, Peng Wang, Ke Yuan, Chung-en Zah, and Xingsheng Liu. "VCSEL line-beam module for LiDAR applications." In Semiconductor Lasers and Applications XI, edited by Yikai Su, Werner H. Hofmann, and Wei Li. SPIE, 2021. http://dx.doi.org/10.1117/12.2601496.
Повний текст джерелаEzzahri, Y., R. Singh, K. Fukutani, Z. Bian, A. Shakouri, G. Zeng, J. E. Bowers, J. M. Zide, and A. C. Gossard. "Transient Thermal Characterization of ErAs/In0.53Ga0.47As Thermoelectric Module." In ASME 2007 InterPACK Conference collocated with the ASME/JSME 2007 Thermal Engineering Heat Transfer Summer Conference. ASMEDC, 2007. http://dx.doi.org/10.1115/ipack2007-33880.
Повний текст джерелаAng, Simon S., and Hao Zhang. "High temperature power electronic module packaging." In 2015 China Semiconductor Technology International Conference (CSTIC). IEEE, 2015. http://dx.doi.org/10.1109/cstic.2015.7153443.
Повний текст джерелаSpiessberger, S., M. Schiemangk, A. Sahm, A. Wicht, H. Wenzel, G. Erbert, and G. Trankle. "Narrow-linewidth high-power semiconductor-based laser module." In 12th European Quantum Electronics Conference CLEO EUROPE/EQEC. IEEE, 2011. http://dx.doi.org/10.1109/cleoe.2011.5942619.
Повний текст джерелаStockmeier, Manz, and Steger. "Novel high power semiconductor module for trench IGBTs." In IC's. IEEE, 2004. http://dx.doi.org/10.1109/wct.2004.240148.
Повний текст джерелаЗвіти організацій з теми "Semiconductor module"
Sfyrla, Anna. Search for WW and WZ production in lepton, neutrino plus jets final states at CDF Run II and Silicon module production and detector control system for the ATLAS SemiConductor Tracker. Office of Scientific and Technical Information (OSTI), March 2008. http://dx.doi.org/10.2172/935479.
Повний текст джерелаGardner, Carl L. The Quantum Hydrodynamic Model for Semiconductor Devices. Fort Belvoir, VA: Defense Technical Information Center, February 1995. http://dx.doi.org/10.21236/ada291809.
Повний текст джерелаGardner, Carl L. The Quantum Hydrodynamic Model for Semiconductor Devices. Fort Belvoir, VA: Defense Technical Information Center, February 1995. http://dx.doi.org/10.21236/ada301555.
Повний текст джерелаWright, Alan F., Normand A. Modine, Stephen R. Lee, and Stephen M. Foiles. Compact Models for Defect Diffusivity in Semiconductor Alloys. Office of Scientific and Technical Information (OSTI), September 2017. http://dx.doi.org/10.2172/1395644.
Повний текст джерелаWang, H., H. Q. Hou, and B. E. Hammons. Anomalous normal mode oscillations in semiconductor microcavities. Office of Scientific and Technical Information (OSTI), April 1997. http://dx.doi.org/10.2172/468579.
Повний текст джерелаPinczuk, Aron, and Shalom J. Wind. Artificially Structured Semiconductors to Model Novel Quantum Phenomena. Office of Scientific and Technical Information (OSTI), January 2018. http://dx.doi.org/10.2172/1416872.
Повний текст джерелаGardner, Carl L. The Quantum Hydrodynamic Model for Semiconductor Devices: Theory and Computations. Fort Belvoir, VA: Defense Technical Information Center, August 1998. http://dx.doi.org/10.21236/ada358049.
Повний текст джерелаBelenky, Gregory, and Sergey Suchalkin. Electrically Tunable Mid-Infrared Single-Mode High-Speed Semiconductor Laser. Fort Belvoir, VA: Defense Technical Information Center, November 2010. http://dx.doi.org/10.21236/ada544757.
Повний текст джерелаWu, Z. C., Daniel A. Jelski, Thomas F. George, L. Nanai, and I. Hevesi. Model of Laser-Induced Deposition on Semiconductors from Liquid Electrolytes. Fort Belvoir, VA: Defense Technical Information Center, April 1989. http://dx.doi.org/10.21236/ada207097.
Повний текст джерелаRuden, P. P., and Darryl L. Smith. Device Model for Light-Emitting Field-Effect Transistors with Organic Semiconductor Channel. Office of Scientific and Technical Information (OSTI), April 2007. http://dx.doi.org/10.2172/1304691.
Повний текст джерела