Добірка наукової літератури з теми "Semiconductor metal interface"
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Статті в журналах з теми "Semiconductor metal interface"
FLORES, F. "ALKALI-ATOM ADSORPTION ON SEMICONDUCTOR SURFACES: METALLIZATION AND SCHOTTKY-BARRIER FORMATION." Surface Review and Letters 02, no. 04 (August 1995): 513–37. http://dx.doi.org/10.1142/s0218625x95000480.
Повний текст джерелаZhang, Mingrui, Mitchell Adkins, and Zhe Wang. "Recent Progress on Semiconductor-Interface Facing Clinical Biosensing." Sensors 21, no. 10 (May 16, 2021): 3467. http://dx.doi.org/10.3390/s21103467.
Повний текст джерелаHINDMARCH, AIDAN T. "INTERFACE MAGNETISM IN FERROMAGNETIC METAL–COMPOUND SEMICONDUCTOR HYBRID STRUCTURES." SPIN 01, no. 01 (June 2011): 45–69. http://dx.doi.org/10.1142/s2010324711000069.
Повний текст джерелаKim, H., K. Okuno, and T. Sakurai. "METAL-SEMICONDUCTOR INTERFACE (Al-Si)." Le Journal de Physique Colloques 48, no. C6 (November 1987): C6–469—C6–472. http://dx.doi.org/10.1051/jphyscol:1987677.
Повний текст джерелаSinclair, Robert. "Reactions at metal-semiconductor interfaces." Proceedings, annual meeting, Electron Microscopy Society of America 47 (August 6, 1989): 448–49. http://dx.doi.org/10.1017/s0424820100154214.
Повний текст джерелаHatta, Hideyuki, Yuhi Miyagawa, Takashi Nagase, Takashi Kobayashi, Takashi Hamada, Shuichi Murakami, Kimihiro Matsukawa, and Hiroyoshi Naito. "Determination of Interface-State Distributions in Polymer-Based Metal-Insulator-Semiconductor Capacitors by Impedance Spectroscopy." Applied Sciences 8, no. 9 (August 29, 2018): 1493. http://dx.doi.org/10.3390/app8091493.
Повний текст джерелаCao, Zhen, Moussab Harb, Sergey M. Kozlov, and Luigi Cavallo. "Structural and Electronic Effects at the Interface between Transition Metal Dichalcogenide Monolayers (MoS2, WSe2, and Their Lateral Heterojunctions) and Liquid Water." International Journal of Molecular Sciences 23, no. 19 (October 7, 2022): 11926. http://dx.doi.org/10.3390/ijms231911926.
Повний текст джерелаHersam, M. C., and R. G. Reifenberger. "Charge Transport through Molecular Junctions." MRS Bulletin 29, no. 6 (June 2004): 385–90. http://dx.doi.org/10.1557/mrs2004.120.
Повний текст джерелаWu, Xu, and Edward S. Yang. "Interface capacitance in metal‐semiconductor junctions." Journal of Applied Physics 65, no. 9 (May 1989): 3560–67. http://dx.doi.org/10.1063/1.342631.
Повний текст джерелаHASEGAWA, HIDEKI. "MICROSCOPIC UNDERSTANDING AND CONTROL OF SURFACES AND INTERFACES OF COMPOUND SEMICONDUCTORS FOR MESOSCOPIC DEVICES." Surface Review and Letters 07, no. 05n06 (October 2000): 583–88. http://dx.doi.org/10.1142/s0218625x0000066x.
Повний текст джерелаДисертації з теми "Semiconductor metal interface"
Denk, Matthias. "Structural investigation of solid liquid interfaces metal semiconductor interface /." [S.l. : s.n.], 2006. http://nbn-resolving.de/urn:nbn:de:bsz:93-opus-29148.
Повний текст джерелаMaani, Colette. "A study of some metal-semiconductor interfaces." Thesis, University of Ulster, 1988. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.329499.
Повний текст джерелаPalmgren, Pål. "Initial stages of metal- and organic-semiconductor interface formation." Licentiate thesis, KTH, KTH, 2006. http://urn.kb.se/resolve?urn=urn:nbn:se:kth:diva-3911.
Повний текст джерелаThis licentiate thesis deals with the electronic and geometrical properties of metal-semiconductor and organic-semiconductor interfaces investigated by photoelectron spectroscopy and scanning tunneling microscopy.
First in line is the Co-InAs interface (metal-semiconductor) where it is found that Co is reactive and upon adsorption and thermal treatment it alloys with the indium of the substrate to form metallic islands, about 20 nm in diameter. The resulting broken bonds causes As entities to form which are loosely bond to the surface and evaporate upon thermal treatment. Thus, the adsorption of Co results in a rough interface.
Secondly the metal-free phthalocyanine (H2PC) - titanium dioxide interface (organic-semiconductor) is investigated. Here it is found that the organic molecules arrange themselves along the substrate rows upon thermal treatment. The interaction with the TiO2 is mainly with the valence Π-electrons in the molecule causing a relatively strong bond, but this interaction is short range as the second layer of molecules retains their molecular character. This results in an ordered adsorption but limited mobility of the molecules on the surface prohibiting well ordered close packed layers. Furthermore, the hydrogen atoms inside the cyclic molecule leave the central void upon thermal treatment.
The third case is the H2PC-InAs/InSb interface (organic-semiconductor). Here ordered overlayer growth is found on both substrates where the molecules are preferentially adsorbed on the In rows in the [110] direction forming one-dimensional chains. The InSb-H2PC interface is found to be weakly interacting and the bulk-like molecular character is retained upon both adsorption and thermal treatment. On the InAs-H2PC interface, however, the interaction is stronger. The molecules are more affected by the surface bond and this effect stretches up a few monolayers in the film after annealing.
Yan, Yu. "Interface magnetic properties in ferromagnetic metal/semiconductor and related heterostructures." Thesis, University of York, 2018. http://etheses.whiterose.ac.uk/20412/.
Повний текст джерелаEvans, D. A. "The metal-indium phosphide (110) interface : Interactions and Schottky barrier formation." Thesis, Bucks New University, 1988. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.234721.
Повний текст джерелаMoran, John Thomas. "The electronic structure of gold-induced reconstructions on vicinal silicon(111)." Thesis, University of Liverpool, 1995. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.283057.
Повний текст джерелаHuang, Chender 1960. "Characterization of interface trap density in power MOSFETs using noise measurements." Thesis, The University of Arizona, 1988. http://hdl.handle.net/10150/276872.
Повний текст джерелаZavaliche, Florin. "The metal-semiconductor interface Fe-Si(001) and Fe-InP(001) /." [S.l. : s.n.], 2002. http://deposit.ddb.de/cgi-bin/dokserv?idn=965216217.
Повний текст джерелаWalters, Stephanie A. "The metal - n-type gallium antimonide (110) interface : interfacial reactions and Schottky barrier formation." Thesis, Cardiff University, 1989. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.238197.
Повний текст джерелаMetcalf, Frances L. "The noble metal/elemental semiconductor interface (a study of Ag on Ge(111))." Thesis, University of Sussex, 1991. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.306595.
Повний текст джерелаКниги з теми "Semiconductor metal interface"
Bell, L. D. Evidence of momentum conservation at a nonepitaxial metal/semiconductor interface using ballistic electron emission microscopy. [Washington, DC: National Aeronautics and Space Administration, 1996.
Знайти повний текст джерелаBell, L. D. Evidence of momentum conservation at a nonepitaxial metal/semiconductor interface using ballistic electron emission microscopy. [Washington, DC: National Aeronautics and Space Administration, 1996.
Знайти повний текст джерелаA, Hiraki, ed. Metal-semiconductor interfaces. Tokyo, Japan: Ohmsha, 1995.
Знайти повний текст джерелаBatra, Inder P., ed. Metallization and Metal-Semiconductor Interfaces. Boston, MA: Springer US, 1989. http://dx.doi.org/10.1007/978-1-4613-0795-2.
Повний текст джерелаMunich), NATO Advanced Research Workshop on Metallization and Metal-Semiconductor Interfaces (1988 Technical University of. Metallization and metal-semiconductor interfaces. New York: Plenum Press, 1989.
Знайти повний текст джерелаBatra, Inder P. Metallization and Metal-Semiconductor Interfaces. Boston, MA: Springer US, 1989.
Знайти повний текст джерелаMaani, Colette. A study of some metal-semiconductor interfaces. [s.l: The Author], 1988.
Знайти повний текст джерелаSin, Wai-Cheong D. Effects of shock waves on metal-semiconductor interfaces. [S.l.]: [s.n.], 1989.
Знайти повний текст джерелаW, Wilmsen Carl, ed. Physics and chemistry of III-V compound semiconductor interfaces. New York: Plenum Press, 1985.
Знайти повний текст джерелаEynde, Frank Op't. Analog interfaces for digitalsignal processing systems. Boston: Kluwer, 1993.
Знайти повний текст джерелаЧастини книг з теми "Semiconductor metal interface"
Salvan, F., F. Thibaudau, Ph Dumas, and A. Humbert. "Initial Stages of Metal-Semiconductor Interface Formation." In NATO ASI Series, 315–27. Boston, MA: Springer US, 1989. http://dx.doi.org/10.1007/978-1-4613-0795-2_20.
Повний текст джерелаLouie, Steven G., and Marvin L. Cohen. "Electronic structure of a metal-semiconductor interface." In Perspectives in Condensed Matter Physics, 116–24. Dordrecht: Springer Netherlands, 1990. http://dx.doi.org/10.1007/978-94-009-0657-0_13.
Повний текст джерелаPankratov, O., and M. Scheffler. "Clustering and Correlations on GaAs — Metal Interface." In Semiconductor Interfaces at the Sub-Nanometer Scale, 121–26. Dordrecht: Springer Netherlands, 1993. http://dx.doi.org/10.1007/978-94-011-2034-0_13.
Повний текст джерелаMuret, P. "Admittance Spectroscopy of Interface States in Metal/Semiconductor Contacts." In Springer Proceedings in Physics, 282–87. Berlin, Heidelberg: Springer Berlin Heidelberg, 1987. http://dx.doi.org/10.1007/978-3-642-72967-6_22.
Повний текст джерелаLudeke, R. "The Role of Defects and Metal States at the Metal-Semiconductor Interface." In NATO ASI Series, 39–54. Boston, MA: Springer US, 1989. http://dx.doi.org/10.1007/978-1-4613-0795-2_3.
Повний текст джерелаHabersat, D. B., Aivars J. Lelis, G. Lopez, J. M. McGarrity, and F. Barry McLean. "On Separating Oxide Charges and Interface Charges in 4H-SiC Metal-Oxide-Semiconductor Devices." In Silicon Carbide and Related Materials 2005, 1007–10. Stafa: Trans Tech Publications Ltd., 2006. http://dx.doi.org/10.4028/0-87849-425-1.1007.
Повний текст джерелаSalaün, A.-C., H. Lhermite, B. Fortin, and O. Bonnaud. "A 2-D modeling of Metal-Oxide-Polycrystalline Silicon-Silicon (MOPS) structures for the determination of interface state and grain boundary state distributions." In Simulation of Semiconductor Devices and Processes, 428–31. Vienna: Springer Vienna, 1995. http://dx.doi.org/10.1007/978-3-7091-6619-2_103.
Повний текст джерелаMassoud, Hisham Z., and James D. Plummer. "A Physical Model for the Observed Dependence of the Metal-Semiconductor Work Function Difference on Substrate Orientation." In The Physics and Chemistry of SiO2 and the Si-SiO2 Interface, 251–58. Boston, MA: Springer US, 1988. http://dx.doi.org/10.1007/978-1-4899-0774-5_28.
Повний текст джерелаWilliams, R. H. "Metal-Semiconductor Interfaces." In The Physics of Submicron Semiconductor Devices, 683–701. Boston, MA: Springer US, 1988. http://dx.doi.org/10.1007/978-1-4899-2382-0_23.
Повний текст джерелаHorváth, Zs J. "The Effect of the Metal, Interface, and Semiconductor Parameters on the Electrical Behaviour of Schottky Junctions." In ESSDERC ’89, 603–6. Berlin, Heidelberg: Springer Berlin Heidelberg, 1989. http://dx.doi.org/10.1007/978-3-642-52314-4_126.
Повний текст джерелаТези доповідей конференцій з теми "Semiconductor metal interface"
Frenzel, H., H. von Wenckstern, A. Lajn, M. Brandt, G. Biehne, H. Hochmuth, M. Lorenz, M. Grundmann, Marília Caldas, and Nelson Studart. "Interface effects in ZnO metal-insulator-semiconductor and metal-semiconductor structures." In PHYSICS OF SEMICONDUCTORS: 29th International Conference on the Physics of Semiconductors. AIP, 2010. http://dx.doi.org/10.1063/1.3295509.
Повний текст джерелаGonzalez-Tudela, A., F. J. Rodriguez, L. Quiroga, C. Tejedor, Jisoon Ihm, and Hyeonsik Cheong. "Quantum dot coupled to metal-semiconductor interface plasmons." In PHYSICS OF SEMICONDUCTORS: 30th International Conference on the Physics of Semiconductors. AIP, 2011. http://dx.doi.org/10.1063/1.3666723.
Повний текст джерелаDmitruk, Nikolas L., Olga Y. Borkovskaya, Olga I. Mayeva, Sergey V. Mamikin, and Oxana B. Yastrubchak. "MSM-photodetectors with corrugated metal-semiconductor-interface based on III-V semiconductors." In Photonics West '97, edited by Gail J. Brown and Manijeh Razeghi. SPIE, 1997. http://dx.doi.org/10.1117/12.271172.
Повний текст джерелаHorng, Ray-Hua, Shih-Hao Chuang, Cheng-Sheng Tsung, Ching-Ho Chen, Cheng-Yi Lin, Feng-Yeh Chang, and Dong-Sing Wuu. "Study of surface plasmons at the metal/semiconductor interface." In SPIE Photonics Europe, edited by David L. Andrews, Jean-Michel Nunzi, and Andreas Ostendorf. SPIE, 2014. http://dx.doi.org/10.1117/12.2050865.
Повний текст джерелаGasparyan, F. V., S. V. Melkonyan, and H. V. Asriyan. "Semiconductor-metal Interface as 1/f Noise Level Regulator." In SIXTH INTERNATIONAL CONFERENCE OF THE BALKAN PHYSICAL UNION. AIP, 2007. http://dx.doi.org/10.1063/1.2733342.
Повний текст джерелаLudeke, R., M. Prietsch, and A. Samsavar. "Metal-Semiconductor Contacts: Surface Morphology and BEEM." In The Microphysics of Surfaces: Beam-Induced Processes. Washington, D.C.: Optica Publishing Group, 1991. http://dx.doi.org/10.1364/msbip.1991.wa4.
Повний текст джерелаKumar, Pramod, Ruchi Agrawal, and Subhasis Ghosh. "Interface dipole responsible for fermi level pinning in metal/3,4,9,10 perylenetetracarboxylic dianhydride interfaces." In 2007 International Workshop on Physics of Semiconductor Devices (IWPSD '07). IEEE, 2007. http://dx.doi.org/10.1109/iwpsd.2007.4472583.
Повний текст джерелаZhang, J., G. A. Umana-Membreno, R. Gu, W. Lei, J. Antoszewski, J. M. Dell, and L. Faraone. "Characterisation of SiNx-HgCdTe interface in metal-insulator-semiconductor structure." In 2014 Conference on Optoelectronic and Microelectronic Materials & Devices (COMMAD). IEEE, 2014. http://dx.doi.org/10.1109/commad.2014.7038653.
Повний текст джерелаKiwa, T., K. Tsukada, M. Suzuki, M. Tonouchi, S. Migitaka, and K. Yokosawa. "Terahertz Emission from Catalytic-Metal/Semiconductor Interface of Hydrogen Sensors." In Optical Terahertz Science and Technology. Washington, D.C.: OSA, 2005. http://dx.doi.org/10.1364/otst.2005.tud7.
Повний текст джерелаHarima, Hiroshi. "Non-Destructive Characterization of Metal-Semiconductor Interface by Raman Scattering." In 2006 14th International Conference on Advanced Thermal Processing of Semiconductors. IEEE, 2006. http://dx.doi.org/10.1109/rtp.2006.367990.
Повний текст джерела