Готові списки джерел за темами / Semiconductor metal interface

Добірка наукової літератури з теми "Semiconductor metal interface"

Автор: Grafiati
Опубліковано: 6 вересня 2023
Оновлено: 7 вересня 2023

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Статті в журналах з теми "Semiconductor metal interface"

1

FLORES, F. "ALKALI-ATOM ADSORPTION ON SEMICONDUCTOR SURFACES: METALLIZATION AND SCHOTTKY-BARRIER FORMATION." Surface Review and Letters 02, no. 04 (August 1995): 513–37. http://dx.doi.org/10.1142/s0218625x95000480.

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Alkali metals deposited on weakly ionic semiconductors are neither reactive nor form large three-dimensional islands, offering an ideal system in which Schottky junctions can be analyzed. In this paper, the alkali-metal-semiconductor interface is reviewed with a special emphasis on the formation of the Schottky barrier. Two regimes are clearly differentiated for the deposition of AMs on a semiconductor: in the high-coverage limit the Schottky barrier is shown to depend, for not very defective interfaces, on the semiconductor charge neutrality level. For low coverages, different one- and two-dimensional structures appear on the semiconductor surface presenting an insulating behavior. For depositions around a metal monolayer, a Mott metal-insulator transition appears; then, the interface Fermi energy is pinned by the metallic density of states at the position determined by the semiconductor charge neutrality level. This situation defines the Schottky barrier height of a thick-metal overlayer.
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2

Zhang, Mingrui, Mitchell Adkins, and Zhe Wang. "Recent Progress on Semiconductor-Interface Facing Clinical Biosensing." Sensors 21, no. 10 (May 16, 2021): 3467. http://dx.doi.org/10.3390/s21103467.

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Semiconductor (SC)-based field-effect transistors (FETs) have been demonstrated as amazing enhancer gadgets due to their delicate interface towards surface adsorption. This leads to their application as sensors and biosensors. Additionally, the semiconductor material has enormous recognizable fixation extends, high affectability, high consistency for solid detecting, and the ability to coordinate with other microfluidic gatherings. This review focused on current progress on the semiconductor-interfaced FET biosensor through the fundamental interface structure of sensor design, including inorganic semiconductor/aqueous interface, photoelectrochemical interface, nano-optical interface, and metal-assisted interface. The works that also point to a further advancement for the trademark properties mentioned have been reviewed here. The emergence of research on the organic semiconductor interface, integrated biosensors with Complementary metal–oxide–semiconductor (CMOS)-compatible, metal-organic frameworks, has accelerated the practical application of biosensors. Through a solid request for research along with sensor application, it will have the option to move forward the innovative sensor with the extraordinary semiconductor interface structure.
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3

HINDMARCH, AIDAN T. "INTERFACE MAGNETISM IN FERROMAGNETIC METAL–COMPOUND SEMICONDUCTOR HYBRID STRUCTURES." SPIN 01, no. 01 (June 2011): 45–69. http://dx.doi.org/10.1142/s2010324711000069.

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Interfaces between dissimilar materials present a wide range of fascinating physical phenomena. When a nanoscale thin-film of a ferromagnetic metal is deposited in intimate contact with a compound semiconductor, the properties of the interface exhibit a wealth of novel behavior, having immense potential for technological application, and being of great interest from the perspective of fundamental physics. This article presents a review of recent advances in the field of interface magnetism in (001)-oriented ferromagnetic metal/III–V compound semiconductor hybrid structures. Until relatively recently, the majority of research in this area continued to concentrate almost exclusively on the prototypical epitaxial Fe / GaAs (001) system: now, a significant proportion of work has branched out from this theme, including ferromagnetic metal alloys, and other III–V compound semiconductors. After a general overview of the topic, and a review of the more recent literature, we discuss recent results where advances have been made in our understanding of the physics underpinning magnetic anisotropy in these systems: tailoring the terms contributing to the angular-dependent free-energy density by employing novel fabrication methods and ferromagnetic metal electrodes.
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4

Kim, H., K. Okuno, and T. Sakurai. "METAL-SEMICONDUCTOR INTERFACE (Al-Si)." Le Journal de Physique Colloques 48, no. C6 (November 1987): C6–469—C6–472. http://dx.doi.org/10.1051/jphyscol:1987677.

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5

Sinclair, Robert. "Reactions at metal-semiconductor interfaces." Proceedings, annual meeting, Electron Microscopy Society of America 47 (August 6, 1989): 448–49. http://dx.doi.org/10.1017/s0424820100154214.

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Examination of the architecture of a semiconductor-based microelectronics device shows that metallic, highly conductive components are an integral part of the miniature circuits. As geometries become increasingly small (e.g. at the sub-micron level) the structure at critical interfaces influences the electrical performance to a greater extent. Accordingly metal-semiconductor junctions have significant technological importance, in addition to any natural scientific interest associated with the bonding of two unlike materials. This article reviews some of our recent work on this topic, with particular emphasis on the reactions which can occur either during fabrication of the interface or upon heating in conjunction with device processing or prolonged service.The simplest system consists of an elemental metal and an elemental semiconductor, silicon being the most important example of the latter. Consideration of phase equilibria indicates that such an interface is thermodynamically unstable: upon heating either a reaction can occur to produce a compound phase (i.e. a silicide), or mutual dissolution of the elements within each other takes place to achieve saturated solid solution compositions. Reference to the appropriate binary phase diagram allows prediction of the result if local equilibrium is achieved. Thus although an atomically abrupt metal-semiconductor interface might be grown under specialized circumstances, this situation can be expected to be unusual and moreover it is not stable to elevated temperatures when atomic mobility and diffusion are rapid.
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6

Hatta, Hideyuki, Yuhi Miyagawa, Takashi Nagase, Takashi Kobayashi, Takashi Hamada, Shuichi Murakami, Kimihiro Matsukawa, and Hiroyoshi Naito. "Determination of Interface-State Distributions in Polymer-Based Metal-Insulator-Semiconductor Capacitors by Impedance Spectroscopy." Applied Sciences 8, no. 9 (August 29, 2018): 1493. http://dx.doi.org/10.3390/app8091493.

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Information on localized states at the interfaces of solution-processed organic semiconductors and polymer gate insulators is critical to the development of printable organic field-effect transistors (OFETs) with good electrical performance. This paper reports on the use of impedance spectroscopy to determine the energy distribution of the density of interface states in organic metal-insulator-semiconductor (MIS) capacitors based on poly(3-hexylthiophene) (P3HT) with three different polymer gate insulators, including polyimide, poly(4-vinylphenol), and poly(methylsilsesquioxane). The findings of the study indicate that the impedance characteristics of the P3HT MIS capacitors are strongly affected by patterning and thermal annealing of the organic semiconductor films. To extract the interface-state distributions from the conductance of the P3HT MIS capacitors, an equivalent circuit model with continuum trap states is used, which also takes the band-bending fluctuations into consideration. In addition, the relationship between the determined interface states and the electrical characteristics of P3HT-based OFETs is investigated.
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7

Cao, Zhen, Moussab Harb, Sergey M. Kozlov, and Luigi Cavallo. "Structural and Electronic Effects at the Interface between Transition Metal Dichalcogenide Monolayers (MoS2, WSe2, and Their Lateral Heterojunctions) and Liquid Water." International Journal of Molecular Sciences 23, no. 19 (October 7, 2022): 11926. http://dx.doi.org/10.3390/ijms231911926.

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Transition metal dichalcogenides (TMDCs) can be used as optical energy conversion materials to catalyze the water splitting reaction. A good catalytical performance requires: (i) well-matched semiconductor bandgaps and water redox potential for fluent energy transfer; and (ii) optimal orientation of the water molecules at the interface for kinetically fast chemical reactions. Interactions at the solid–liquid interface can have an important impact on these two factors; most theoretical studies have employed semiconductor-in-vacuum models. In this work, we explored the interface formed by liquid water and different types of TMDCs monolayers (MoS2, WSe2, and their lateral heterojunctions), using a combined molecular dynamics (MD) and density functional theory (DFT) approach. The strong interactions between water and these semiconductors confined the adsorbed water layer presenting structural patterns, with the water molecules well connected to the bulk water through the hydrogen bonding network. Structural fluctuations in the metal chalcogenide bonds during the MD simulations resulted in a 0.2 eV reduction of the band gap of the TMDCs. The results suggest that when designing new TMDC semiconductors, both the surface hydrophobicity and the variation of the bandgaps originating from the water-semiconductor interface, need to be considered.
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8

Hersam, M. C., and R. G. Reifenberger. "Charge Transport through Molecular Junctions." MRS Bulletin 29, no. 6 (June 2004): 385–90. http://dx.doi.org/10.1557/mrs2004.120.

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AbstractIn conventional solid-state electronic devices, junctions and interfaces play a significant if not dominant role in controlling charge transport. Although the emerging field of molecular electronics often focuses on the properties of the molecule in the design and understanding of device behavior, the effects of interfaces and junctions are often of comparable importance. This article explores recent work in the study of metal–molecule–metal and semiconductor–molecule–metal junctions. Specific issues include the mixing of discrete molecular levels with the metal continuum, charge transfer between molecules and semiconductors, electron-stimulated desorption, and resonant tunneling. By acknowledging the consequences of junction/interface effects, realistic prospects and limitations can be identified for molecular electronic devices.
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9

Wu, Xu, and Edward S. Yang. "Interface capacitance in metal‐semiconductor junctions." Journal of Applied Physics 65, no. 9 (May 1989): 3560–67. http://dx.doi.org/10.1063/1.342631.

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10

HASEGAWA, HIDEKI. "MICROSCOPIC UNDERSTANDING AND CONTROL OF SURFACES AND INTERFACES OF COMPOUND SEMICONDUCTORS FOR MESOSCOPIC DEVICES." Surface Review and Letters 07, no. 05n06 (October 2000): 583–88. http://dx.doi.org/10.1142/s0218625x0000066x.

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Microscopic properties of free surfaces and metal–semiconductor interfaces related to successful realization of mesoscopic devices are discussed for III–V compound semiconductors, with a particular emphasis on Fermi level pinning. Surface states causing pinning are present even on freshly MBE-grown clean (001) and (110) surfaces with well-defined surface structures. Scanning tunneling spectroscopy (STS) measurement gives anomalous spectra with large conductance gaps, and this can be explained by tip-induced local charging of surface states. Pinning on free surfaces can be considerably suppressed by a surface passivation using an ultrathin MBE-grown silicon interface control layer (Si ICL). In mesoscopic scale metal–semiconductor contacts, Fermi level pinning underneath the metal contact itself is remarkably reduced with the use of the optimum in situ electrochemical metal deposition. However, Fermi level pinning on the surrounding free surfaces has large effects on current transport and capacitance properties in such contacts.
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Дисертації з теми "Semiconductor metal interface"

1

Denk, Matthias. "Structural investigation of solid liquid interfaces metal semiconductor interface /." [S.l. : s.n.], 2006. http://nbn-resolving.de/urn:nbn:de:bsz:93-opus-29148.

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2

Maani, Colette. "A study of some metal-semiconductor interfaces." Thesis, University of Ulster, 1988. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.329499.

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3

Palmgren, Pål. "Initial stages of metal- and organic-semiconductor interface formation." Licentiate thesis, KTH, KTH, 2006. http://urn.kb.se/resolve?urn=urn:nbn:se:kth:diva-3911.

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This licentiate thesis deals with the electronic and geometrical properties of metal-semiconductor and organic-semiconductor interfaces investigated by photoelectron spectroscopy and scanning tunneling microscopy.

First in line is the Co-InAs interface (metal-semiconductor) where it is found that Co is reactive and upon adsorption and thermal treatment it alloys with the indium of the substrate to form metallic islands, about 20 nm in diameter. The resulting broken bonds causes As entities to form which are loosely bond to the surface and evaporate upon thermal treatment. Thus, the adsorption of Co results in a rough interface.

Secondly the metal-free phthalocyanine (H2PC) - titanium dioxide interface (organic-semiconductor) is investigated. Here it is found that the organic molecules arrange themselves along the substrate rows upon thermal treatment. The interaction with the TiO2 is mainly with the valence Π-electrons in the molecule causing a relatively strong bond, but this interaction is short range as the second layer of molecules retains their molecular character. This results in an ordered adsorption but limited mobility of the molecules on the surface prohibiting well ordered close packed layers. Furthermore, the hydrogen atoms inside the cyclic molecule leave the central void upon thermal treatment.

The third case is the H2PC-InAs/InSb interface (organic-semiconductor). Here ordered overlayer growth is found on both substrates where the molecules are preferentially adsorbed on the In rows in the [110] direction forming one-dimensional chains. The InSb-H2PC interface is found to be weakly interacting and the bulk-like molecular character is retained upon both adsorption and thermal treatment. On the InAs-H2PC interface, however, the interaction is stronger. The molecules are more affected by the surface bond and this effect stretches up a few monolayers in the film after annealing.

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4

Yan, Yu. "Interface magnetic properties in ferromagnetic metal/semiconductor and related heterostructures." Thesis, University of York, 2018. http://etheses.whiterose.ac.uk/20412/.

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This dissertation investigates the growth and magnetic properties of magnetic thin films deposited on semiconductor GaAs and the insulator MgO, which could be useful for devices such as Spin-FET and MRAM. CoFeB amorphous films were grown on both GaAs and MgO. We have studied the origin of the uniaxial magnetic anisotropy (UMA) and perpendicular magnetic anisotropy (PMA) with TEM, VSM and XMCD. Our results demonstrated that the orbital moment of Co atoms play an important role to both UMA and PMA. The origin of UMA in Fe/GaAs (100) system with Cr interlayers is explored. The values of UMA in the Fe/GaAs systems were found to be dependent on the thickness of Cr interlayer by the SQUID-VSM measurements. RHEED patterns and TEM images offered the morphology and crystalline structure information of different layers in the samples. Our results show that the UMA disappears when the interlayer Cr forms continuous film of around 5 ML. This offers direct evidence for the first time that the origin of UMA is from the interface bonding rather than the lattice mismatch related film stress. Finally, Fe films were deposited onto GaAs (100) substrate with a heavy metal element Au interface layer. The enhancement of UMA was found in the Fe/Au/GaAs system by the VSM measurements. The XMCD results show that the orbital moment of Fe is enhanced when the Au interlayer is under 0.5 ML, which leads to the enhancement of the UMA in the Fe/Au/GaAs system. Results from the three different systems provide an important understanding of the research into the interface magnetic properties of ferromagnetic metal/semiconductors. These interesting discoveries are very useful for the development of next generation electronic devices like MRAM and SpinFET.
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5

Evans, D. A. "The metal-indium phosphide (110) interface : Interactions and Schottky barrier formation." Thesis, Bucks New University, 1988. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.234721.

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6

Moran, John Thomas. "The electronic structure of gold-induced reconstructions on vicinal silicon(111)." Thesis, University of Liverpool, 1995. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.283057.

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7

Huang, Chender 1960. "Characterization of interface trap density in power MOSFETs using noise measurements." Thesis, The University of Arizona, 1988. http://hdl.handle.net/10150/276872.

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Low-frequency noise has been measured on commercial power MOSFETs. These devices, fabricated with the VDMOS structure, exhibit a 1/f type noise spectrum. The interface state density obtained from noise measurements was compared with that obtained from the subthreshold-slope method. Reasonable agreement was found between the two measurements. The radiation effects on the noise power spectral density were also investigated. The results indicated that the noise can be attributed to the generation of interface traps near the Si-SiO₂ interface. The level of interface traps generated by radiation was bias dependent. The positive gate bias gave rise to the largest interface-trap density.
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8

Zavaliche, Florin. "The metal-semiconductor interface Fe-Si(001) and Fe-InP(001) /." [S.l. : s.n.], 2002. http://deposit.ddb.de/cgi-bin/dokserv?idn=965216217.

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9

Walters, Stephanie A. "The metal - n-type gallium antimonide (110) interface : interfacial reactions and Schottky barrier formation." Thesis, Cardiff University, 1989. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.238197.

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Metcalf, Frances L. "The noble metal/elemental semiconductor interface (a study of Ag on Ge(111))." Thesis, University of Sussex, 1991. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.306595.

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Книги з теми "Semiconductor metal interface"

1

Bell, L. D. Evidence of momentum conservation at a nonepitaxial metal/semiconductor interface using ballistic electron emission microscopy. [Washington, DC: National Aeronautics and Space Administration, 1996.

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2

Bell, L. D. Evidence of momentum conservation at a nonepitaxial metal/semiconductor interface using ballistic electron emission microscopy. [Washington, DC: National Aeronautics and Space Administration, 1996.

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3

A, Hiraki, ed. Metal-semiconductor interfaces. Tokyo, Japan: Ohmsha, 1995.

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4

Batra, Inder P., ed. Metallization and Metal-Semiconductor Interfaces. Boston, MA: Springer US, 1989. http://dx.doi.org/10.1007/978-1-4613-0795-2.

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5

Munich), NATO Advanced Research Workshop on Metallization and Metal-Semiconductor Interfaces (1988 Technical University of. Metallization and metal-semiconductor interfaces. New York: Plenum Press, 1989.

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6

Batra, Inder P. Metallization and Metal-Semiconductor Interfaces. Boston, MA: Springer US, 1989.

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7

Maani, Colette. A study of some metal-semiconductor interfaces. [s.l: The Author], 1988.

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8

Sin, Wai-Cheong D. Effects of shock waves on metal-semiconductor interfaces. [S.l.]: [s.n.], 1989.

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9

W, Wilmsen Carl, ed. Physics and chemistry of III-V compound semiconductor interfaces. New York: Plenum Press, 1985.

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10

Eynde, Frank Op't. Analog interfaces for digitalsignal processing systems. Boston: Kluwer, 1993.

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Частини книг з теми "Semiconductor metal interface"

1

Salvan, F., F. Thibaudau, Ph Dumas, and A. Humbert. "Initial Stages of Metal-Semiconductor Interface Formation." In NATO ASI Series, 315–27. Boston, MA: Springer US, 1989. http://dx.doi.org/10.1007/978-1-4613-0795-2_20.

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2

Louie, Steven G., and Marvin L. Cohen. "Electronic structure of a metal-semiconductor interface." In Perspectives in Condensed Matter Physics, 116–24. Dordrecht: Springer Netherlands, 1990. http://dx.doi.org/10.1007/978-94-009-0657-0_13.

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3

Pankratov, O., and M. Scheffler. "Clustering and Correlations on GaAs — Metal Interface." In Semiconductor Interfaces at the Sub-Nanometer Scale, 121–26. Dordrecht: Springer Netherlands, 1993. http://dx.doi.org/10.1007/978-94-011-2034-0_13.

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4

Muret, P. "Admittance Spectroscopy of Interface States in Metal/Semiconductor Contacts." In Springer Proceedings in Physics, 282–87. Berlin, Heidelberg: Springer Berlin Heidelberg, 1987. http://dx.doi.org/10.1007/978-3-642-72967-6_22.

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5

Ludeke, R. "The Role of Defects and Metal States at the Metal-Semiconductor Interface." In NATO ASI Series, 39–54. Boston, MA: Springer US, 1989. http://dx.doi.org/10.1007/978-1-4613-0795-2_3.

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6

Habersat, D. B., Aivars J. Lelis, G. Lopez, J. M. McGarrity, and F. Barry McLean. "On Separating Oxide Charges and Interface Charges in 4H-SiC Metal-Oxide-Semiconductor Devices." In Silicon Carbide and Related Materials 2005, 1007–10. Stafa: Trans Tech Publications Ltd., 2006. http://dx.doi.org/10.4028/0-87849-425-1.1007.

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7

Salaün, A.-C., H. Lhermite, B. Fortin, and O. Bonnaud. "A 2-D modeling of Metal-Oxide-Polycrystalline Silicon-Silicon (MOPS) structures for the determination of interface state and grain boundary state distributions." In Simulation of Semiconductor Devices and Processes, 428–31. Vienna: Springer Vienna, 1995. http://dx.doi.org/10.1007/978-3-7091-6619-2_103.

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8

Massoud, Hisham Z., and James D. Plummer. "A Physical Model for the Observed Dependence of the Metal-Semiconductor Work Function Difference on Substrate Orientation." In The Physics and Chemistry of SiO2 and the Si-SiO2 Interface, 251–58. Boston, MA: Springer US, 1988. http://dx.doi.org/10.1007/978-1-4899-0774-5_28.

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Williams, R. H. "Metal-Semiconductor Interfaces." In The Physics of Submicron Semiconductor Devices, 683–701. Boston, MA: Springer US, 1988. http://dx.doi.org/10.1007/978-1-4899-2382-0_23.

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Horváth, Zs J. "The Effect of the Metal, Interface, and Semiconductor Parameters on the Electrical Behaviour of Schottky Junctions." In ESSDERC ’89, 603–6. Berlin, Heidelberg: Springer Berlin Heidelberg, 1989. http://dx.doi.org/10.1007/978-3-642-52314-4_126.

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Тези доповідей конференцій з теми "Semiconductor metal interface"

1

Frenzel, H., H. von Wenckstern, A. Lajn, M. Brandt, G. Biehne, H. Hochmuth, M. Lorenz, M. Grundmann, Marília Caldas, and Nelson Studart. "Interface effects in ZnO metal-insulator-semiconductor and metal-semiconductor structures." In PHYSICS OF SEMICONDUCTORS: 29th International Conference on the Physics of Semiconductors. AIP, 2010. http://dx.doi.org/10.1063/1.3295509.

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2

Gonzalez-Tudela, A., F. J. Rodriguez, L. Quiroga, C. Tejedor, Jisoon Ihm, and Hyeonsik Cheong. "Quantum dot coupled to metal-semiconductor interface plasmons." In PHYSICS OF SEMICONDUCTORS: 30th International Conference on the Physics of Semiconductors. AIP, 2011. http://dx.doi.org/10.1063/1.3666723.

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3

Dmitruk, Nikolas L., Olga Y. Borkovskaya, Olga I. Mayeva, Sergey V. Mamikin, and Oxana B. Yastrubchak. "MSM-photodetectors with corrugated metal-semiconductor-interface based on III-V semiconductors." In Photonics West '97, edited by Gail J. Brown and Manijeh Razeghi. SPIE, 1997. http://dx.doi.org/10.1117/12.271172.

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4

Horng, Ray-Hua, Shih-Hao Chuang, Cheng-Sheng Tsung, Ching-Ho Chen, Cheng-Yi Lin, Feng-Yeh Chang, and Dong-Sing Wuu. "Study of surface plasmons at the metal/semiconductor interface." In SPIE Photonics Europe, edited by David L. Andrews, Jean-Michel Nunzi, and Andreas Ostendorf. SPIE, 2014. http://dx.doi.org/10.1117/12.2050865.

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5

Gasparyan, F. V., S. V. Melkonyan, and H. V. Asriyan. "Semiconductor-metal Interface as 1/f Noise Level Regulator." In SIXTH INTERNATIONAL CONFERENCE OF THE BALKAN PHYSICAL UNION. AIP, 2007. http://dx.doi.org/10.1063/1.2733342.

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6

Ludeke, R., M. Prietsch, and A. Samsavar. "Metal-Semiconductor Contacts: Surface Morphology and BEEM." In The Microphysics of Surfaces: Beam-Induced Processes. Washington, D.C.: Optica Publishing Group, 1991. http://dx.doi.org/10.1364/msbip.1991.wa4.

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Анотація:
Ballistic Electron Emission Spectroscopy (BEEM) is a promising new variant of STM spectroscopy that allows the determination of Schottky barrier heights with high lateral resolution for relatively thick (≃100 Å) metal overlayers.1,2 The technique encompasses the injection of electrons or holes with an STM, which then reach the interface without scattering (ballistically). At the interface they will be reflected unless sufficient bias is applied between the tunneling tip and the metal overlayer to overcome the Schottky barrier height (see Fig. 1). Once the electrons reach the conduction band of the semiconductor they will be detected as a collector current Ic. Representative Ic vs VT, where VT, is the tip-to-metal bias, are shown in Fig. 2 for Ag and Au films on GaP(110). The Schottky barrier height is associated with the voltage threshold Vo beyond which a current can be detected. Because of the "soft" turn on of Ic, Vo is poorly defined unless the appropriate shape of the I-V curve is known from theoretical considerations. The imaging of the variations in Ic as a function of latcral position is referred to as a BEEM image, and has been associated with variations in Schottky barrier heights across the interface.1’3 We will show here that another and perhaps more dominant source of contrast in BEEM images is the surface topography, as surface gradients may result in current injections that reach the interface at angles substantially off-normal, a condition which drastically reduces the collector current intensities. The current variations in Fig. 2 are attributed to such variations in the injection angles. In order to quantify this notion we have also developed a model for the interface transport that includes non-classical transmission across the metal-semiconductor interface, as well as off-normal angles of incidence. An outline of these concepts will be presented here, as well as a quantitative comparison of the the model with topographic and BEEM data for several metals on GaP(110).
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Kumar, Pramod, Ruchi Agrawal, and Subhasis Ghosh. "Interface dipole responsible for fermi level pinning in metal/3,4,9,10 perylenetetracarboxylic dianhydride interfaces." In 2007 International Workshop on Physics of Semiconductor Devices (IWPSD '07). IEEE, 2007. http://dx.doi.org/10.1109/iwpsd.2007.4472583.

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Zhang, J., G. A. Umana-Membreno, R. Gu, W. Lei, J. Antoszewski, J. M. Dell, and L. Faraone. "Characterisation of SiNx-HgCdTe interface in metal-insulator-semiconductor structure." In 2014 Conference on Optoelectronic and Microelectronic Materials & Devices (COMMAD). IEEE, 2014. http://dx.doi.org/10.1109/commad.2014.7038653.

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9

Kiwa, T., K. Tsukada, M. Suzuki, M. Tonouchi, S. Migitaka, and K. Yokosawa. "Terahertz Emission from Catalytic-Metal/Semiconductor Interface of Hydrogen Sensors." In Optical Terahertz Science and Technology. Washington, D.C.: OSA, 2005. http://dx.doi.org/10.1364/otst.2005.tud7.

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10

Harima, Hiroshi. "Non-Destructive Characterization of Metal-Semiconductor Interface by Raman Scattering." In 2006 14th International Conference on Advanced Thermal Processing of Semiconductors. IEEE, 2006. http://dx.doi.org/10.1109/rtp.2006.367990.

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