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Статті в журналах з теми "Semiconducting material"
Groń, T., M. Bosacka, E. Filipek, A. Pacześna, P. Urbanowicz, B. Sawicki, and H. Duda. "Semiconducting properties of Cu2In3VO9 ceramic material." Ceramics International 43, no. 2 (February 2017): 2456–59. http://dx.doi.org/10.1016/j.ceramint.2016.11.040.
Повний текст джерелаDaya Shanker and Rashimi Yadav. "The impact of magnetic field on the surface of carbon-insulator-GaAs Semiconductors which is tunable with a frequency range in the presence of surface magneto Plasmon." International Journal of Science and Research Archive 7, no. 2 (December 30, 2022): 306–11. http://dx.doi.org/10.30574/ijsra.2022.7.2.0279.
Повний текст джерелаHadziioannou, Georges. "Semiconducting Block Copolymers for Self-Assembled Photovoltaic Devices." MRS Bulletin 27, no. 6 (June 2002): 456–60. http://dx.doi.org/10.1557/mrs2002.145.
Повний текст джерелаMcMichael, Stuart, Pilar Fernández-Ibáñez, and John Anthony Byrne. "A Review of Photoelectrocatalytic Reactors for Water and Wastewater Treatment." Water 13, no. 9 (April 26, 2021): 1198. http://dx.doi.org/10.3390/w13091198.
Повний текст джерелаHan, Fanjunjie, Tong Yu, Xin Qu, Aitor Bergara, and Guochun Yang. "Semiconducting MnB5 monolayer as a potential photovoltaic material." Journal of Physics: Condensed Matter 33, no. 17 (April 21, 2021): 175702. http://dx.doi.org/10.1088/1361-648x/abe269.
Повний текст джерелаElim, Hendry I., Wei Ji, Meng-Tack Ng, and Jagadese J. Vittal. "AgInSe2 nanorods: A semiconducting material for saturable absorber." Applied Physics Letters 90, no. 3 (January 15, 2007): 033106. http://dx.doi.org/10.1063/1.2429030.
Повний текст джерелаHanack, Michael, Armin Lange, and Ronald Grosshans. "Tetrazine-bridged phthalocyaninato-metal complexes as semiconducting material." Synthetic Metals 45, no. 1 (October 1991): 59–70. http://dx.doi.org/10.1016/0379-6779(91)91847-4.
Повний текст джерелаSolozhenko, Vladimir L., Natalia A. Dubrovinskaia, and Leonid S. Dubrovinsky. "Synthesis of bulk superhard semiconducting B–C material." Applied Physics Letters 85, no. 9 (August 30, 2004): 1508–10. http://dx.doi.org/10.1063/1.1786363.
Повний текст джерелаKlugmann, Eugeniusz, and Michal Polowczyk. "Semiconducting diamond as material for high temperature thermistors." Materials Research Innovations 4, no. 1 (November 2000): 45–48. http://dx.doi.org/10.1007/s100190000067.
Повний текст джерелаJin, Changhyun, Hyunsu Kim, Wan In Lee, and Chongmu Lee. "Ultraintense Luminescence in Semiconducting-Material-Sheathed MgO Nanorods." Advanced Materials 23, no. 17 (March 28, 2011): 1982–87. http://dx.doi.org/10.1002/adma.201004266.
Повний текст джерелаДисертації з теми "Semiconducting material"
Ahmad, Nisar. "High-field transport in semiconducting material and devices." Thesis, Brunel University, 1990. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.258019.
Повний текст джерелаKozawa, Daichi. "Behavior of photocarrier in atomically thin two-dimensional semiconducting materials for optoelectronics." Kyoto University, 2015. http://hdl.handle.net/2433/199420.
Повний текст джерелаLonghin, Mattia. "Semiconducting bolometric detectors : material optimization and device design for future room temperature THz imaging arrays." Paris 6, 2009. http://www.theses.fr/2009PA066076.
Повний текст джерелаCALASCIBETTA, ADIEL MAURO. "SUSTAINABLE SYNTHETIC METHODOLOGIES FOR THE PREPARATION OF ORGANIC SEMICONDUCTING MATERIALS: ORGANIC (OPTO)ELECTRONICS GROWING “GREEN”." Doctoral thesis, Università degli Studi di Milano-Bicocca, 2021. http://hdl.handle.net/10281/312085.
Повний текст джерелаThe worldwide demand for energy-efficient and high-performing (opto)electronics, along with the increasing need for economically feasible and environmentally friendly chemistry, both require semiconducting materials that are both scalable and sustainable. The concern with waste generation and toxic/hazardous chemicals usage has already moulded many operations in chemical and manufacturing industries. To date, common syntheses to access organic semiconductors require the use of large quantities of toxic and/or flammable organic solvents, often involving reagents and by-products that are harmful to health and environment. Research in the field of organic electronics is now increasingly focusing on the development of new sustainable methodologies that allow to prepare active materials in a more efficiently way, caring further on safety and sustainability associated with production processes. The immediate approach applicable consist on the removal, or at least on the minimization, of harmful and toxic substances commonly employed within standard processes. The big elephant in the room in the synthesis of active materials is the amount of organic solvent employed, which could ideally be reduced by using aqueous solution of surfactants: in these nano/micro heterogeneous environments organic transformations can happen and often with unprecedent efficiency. Clearly, the process occur not through the dissolution of the reagents (starting materials and catalyst) but from their dispersion in water. Kwon as “micellar catalysis”, this strategy has proven to be highly effective on improving sustainability becoming a prominent topic in modern organic synthesis. In particular, the micellar catalysis strategy is compatible with the most common modern strategies employed for C-C and C-heteroatom bonds forming reactions and allow to perform reactions with high yields, in water and under very mild conditions. Nonetheless, the use of such method in the field of organic semiconductors is still limited, with only few relevant examples reported in literature concerning the preparation of π-conjugated molecular and polymeric materials. This Thesis describes the importance of introducing sustainability in the synthesis of organic semiconductors, satisfying several principles of the green chemistry guidance. Our research purpose is not to provide an exhaustive list of examples of such chemistry, but rather to identify a few key developments in the field that seem especially suited to large-scale synthesis. Then, the discussion will consider the synthetic approaches typically employed to access semiconducting materials with extended π-conjugated structures. In particular, the discussion will involve the well-known Pd-catalysed cross-coupling techniques. Finally, the topic of the work will focus on micro-heterogeneous environments as a new tool for introducing sustainability in the preparation of active materials in water, satisfying several criteria relevant to green chemistry. On my opinion, the micellar catalysis approach constitute today the more promising method to lower the overall cost and environmental impact in the production of organic semiconductors without affecting yields, purity, and device performance.
Fix, Aaron. "Synthesis and Properties of Indenofluorene and Diindenothiophene Derivatives for Use as Semiconducting Materials in Organic Electronic Devices." Thesis, University of Oregon, 2013. http://hdl.handle.net/1794/13444.
Повний текст джерела2015-10-10
Burwood, Ryan Paul. "Towards semiconducting hybrid framework materials." Thesis, University of Cambridge, 2013. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.648156.
Повний текст джерелаZhang, Yu. "Fabrication, structural and spectroscopic studies of wide bandgap semiconducting nanoparticles of ZnO for application as white light emitting diodes." Thesis, Lyon, 2020. http://www.theses.fr/2020LYSEI046.
Повний текст джерелаThe present thesis studies ZnO nanoparticles embedded in a mesospheric polyacrylic acid (PAA) matrix synthesized via a hydrolysis protocol. The mesospheric ZnO/PAA hybrid structure was previously proved efficient in emitting visible light in a broad range, which results from the deep-level intrinsic defects in ZnO nanocrystals. To further tune the photoluminescence (PL) spectrum and improve the PL quantum yield (PL QY) of the material, metal-doped ZnO and silica-coated ZnO/PAA are fabricated independently. For ZnO doped with metallic elements, the nature, concentration, size and valence of the dopant are found to affect the formation of the mesospheres and consequently the PL and PL QY. Ions larger than Zn2+ with a higher valence tend to induce larger mesospheres and unembedded ZnO nanoparticles. Doping generally leads to the quenching of PL, but the PL spectrum can still be tuned in a wide range (between 2.46 eV and 2.17 eV) without degrading the PL QY by doping small ions at a low doping concentration (0.1 %). For silica-coated ZnO/PAA, an optimal coating correlatively depends on the amount of TEOS and ammonia in the coating process. The amount of TEOS does not affect the crystal structure of ZnO or the PL spectrum of the material, but high concentration of ammonia can degrade the PAA mesospheres and thicken the silica shell. A thin layer of silica that does not absorb too much excitation light but completely covers the mesospheres proves to be the most efficient, with a drastic PL QY improvement of six times. Regarding the application, the materials suffer from thermal quenching at temperatures high up to 100°C, at which white light emitting diodes (WLEDs) generally operates. However, silica-coated ZnO/PAA induces higher emission intensity at room temperature to make up for the thermal quenching
Yang, Changduk. "Conjugated semiconducting organic materials for electronic applications." [S.l.] : [s.n.], 2006. http://deposit.ddb.de/cgi-bin/dokserv?idn=98159641X.
Повний текст джерелаKrishnamurthy, Rajesh. "Passivation of GaAs and GaInAsP semiconducting materials." Thesis, National Library of Canada = Bibliothèque nationale du Canada, 1998. http://www.collectionscanada.ca/obj/s4/f2/dsk2/tape17/PQDD_0005/NQ31174.pdf.
Повний текст джерелаYang, Hui. "Modelling charge transport in organic semiconducting materials." Thesis, University College London (University of London), 2018. http://discovery.ucl.ac.uk/10062018/.
Повний текст джерелаКниги з теми "Semiconducting material"
Ahmad, Nisar. High-field transport in semiconducting material and devices. Uxbridge: Brunel University, 1990.
Знайти повний текст джерелаCullis, A. G., and J. L. Hutchison, eds. Microscopy of Semiconducting Materials. Berlin, Heidelberg: Springer Berlin Heidelberg, 2005. http://dx.doi.org/10.1007/3-540-31915-8.
Повний текст джерелаAsomoza, René, and S. Velumani. Advances in semiconducting materials. Stafa-Zurich, Switzerland: Trans Tech Publications, 2009.
Знайти повний текст джерелаBorisenko, V. E. Semiconducting Silicides. Berlin, Heidelberg: Springer Berlin Heidelberg, 2000.
Знайти повний текст джерелаButcher, Paul N., Norman H. March, and Mario P. Tosi, eds. Crystalline Semiconducting Materials and Devices. Boston, MA: Springer US, 1986. http://dx.doi.org/10.1007/978-1-4757-9900-2.
Повний текст джерелаCullis, A. G., and P. A. Midgley, eds. Microscopy of Semiconducting Materials 2007. Dordrecht: Springer Netherlands, 2008. http://dx.doi.org/10.1007/978-1-4020-8615-1.
Повний текст джерелаGupta, K. M., and Nishu Gupta. Advanced Semiconducting Materials and Devices. Cham: Springer International Publishing, 2016. http://dx.doi.org/10.1007/978-3-319-19758-6.
Повний текст джерелаN, Butcher Paul, March Norman H. 1927-, and Tosi M. P, eds. Crystalline semiconducting materials and devices. New York: Plenum Press, 1986.
Знайти повний текст джерелаP, Agarwala R., ed. Special defects in semiconducting materials. Switzerland: Scitec Publications, 2000.
Знайти повний текст джерела1934-, Hartnagel Hans, ed. Semiconducting transparent thin films. Bristol [England]: Institute of Physics Pub., 1995.
Знайти повний текст джерелаЧастини книг з теми "Semiconducting material"
Borisenko, Victor E., and Andrew B. Filonov. "General Material Aspects." In Semiconducting Silicides, 1–79. Berlin, Heidelberg: Springer Berlin Heidelberg, 2000. http://dx.doi.org/10.1007/978-3-642-59649-0_1.
Повний текст джерелаHernández-Ramírez, Aracely, and Iliana Medina-Ramírez. "Semiconducting Materials." In Photocatalytic Semiconductors, 1–40. Cham: Springer International Publishing, 2014. http://dx.doi.org/10.1007/978-3-319-10999-2_1.
Повний текст джерелаFahlman, Bradley D. "Semiconducting Materials." In Materials Chemistry, 153–219. Dordrecht: Springer Netherlands, 2007. http://dx.doi.org/10.1007/978-1-4020-6120-2_4.
Повний текст джерелаHaas, C. "Special Semiconducting Materials." In Crystalline Semiconducting Materials and Devices, 355–95. Boston, MA: Springer US, 1986. http://dx.doi.org/10.1007/978-1-4757-9900-2_9.
Повний текст джерелаHasegawa, Shuji, and Masahiko Tomitori. "Characterization of Semiconducting Materials." In Roadmap of Scanning Probe Microscopy, 133–37. Berlin, Heidelberg: Springer Berlin Heidelberg, 2007. http://dx.doi.org/10.1007/978-3-540-34315-8_18.
Повний текст джерелаHoa Hong, Nguyen. "Diluted magnetic Semiconducting oxides." In Functional Materials and Electronics, 263–87. Oakville, ON ; Waretown, NJ : Apple Academic Press, [2017]: Apple Academic Press, 2018. http://dx.doi.org/10.1201/9781315167367-6.
Повний текст джерелаRadhakrishna, S. "Raman Spectroscopy of Semiconducting Materials." In Main Group Elements and their Compounds, 146–50. Berlin, Heidelberg: Springer Berlin Heidelberg, 1996. http://dx.doi.org/10.1007/978-3-642-52478-3_13.
Повний текст джерелаKhedkar, Jayshree, Anil M. Palve, and Ram K. Gupta. "Semiconducting Nanostructured Materials for Bioelectronics." In Bioelectronics, 187–201. Boca Raton: CRC Press, 2022. http://dx.doi.org/10.1201/9781003263265-12.
Повний текст джерелаBalberg, Isaac. "Percolation Theory and Its Application in Electrically Conducting Materials." In Semiconducting Polymer Composites, 145–69. Weinheim, Germany: Wiley-VCH Verlag GmbH & Co. KGaA, 2013. http://dx.doi.org/10.1002/9783527648689.ch5.
Повний текст джерелаTong, Colin. "Semiconducting Materials for Printed Flexible Electronics." In Advanced Materials for Printed Flexible Electronics, 159–220. Cham: Springer International Publishing, 2021. http://dx.doi.org/10.1007/978-3-030-79804-8_4.
Повний текст джерелаТези доповідей конференцій з теми "Semiconducting material"
Ullrich, B., I. Kulac, H. Pint, G. Leising, and H. Kahlert. "Semiconducting YBa2Cu3O6 Films: A New Material." In 1992 International Conference on Solid State Devices and Materials. The Japan Society of Applied Physics, 1992. http://dx.doi.org/10.7567/ssdm.1992.s-iii-2.
Повний текст джерелаOzvold, Milan, V. Gasparik, and Peter Mrafko. "Optical properties of semiconducting iron disilicide thin films." In Material Science and Material Properties for Infrared Optoelectronics, edited by Fiodor F. Sizov. SPIE, 1999. http://dx.doi.org/10.1117/12.368351.
Повний текст джерелаTeghil, R., A. Giardini Guidoni, A. Mele, G. Pizella, A. Santagata, and S. Orlando. "Epitaxial growth of thin films of SnSe semiconducting material." In The 54th international meeting of physical chemistry: Fast elementary processes in chemical and biological systems. AIP, 1996. http://dx.doi.org/10.1063/1.50171.
Повний текст джерелаFerris, Kim F., Bobbie-Jo M. Webb-Robertson, and Dumont M. Jones. "Semiconducting material property relationships: trends and their impact on design of radiation detection materials." In SPIE Optical Engineering + Applications, edited by Ralph B. James, Larry A. Franks, and Arnold Burger. SPIE, 2009. http://dx.doi.org/10.1117/12.830145.
Повний текст джерелаAhmad, Kaleem. "Electrospun semiconducting nanofibers as an attractive material for renewable energy applications." In 2012 International Conference on Renewable Energies for Developing Countries (REDEC). IEEE, 2012. http://dx.doi.org/10.1109/redec.2012.6416696.
Повний текст джерелаPawar, Harsha, Nikita Acharya, Mani Shugani, Mahendra Aynyas, and Sankar P. Sanyal. "Thermoelectric response of anti-fluoride Sr2Ge semiconducting material: A first-principles study." In DAE SOLID STATE PHYSICS SYMPOSIUM 2019. AIP Publishing, 2020. http://dx.doi.org/10.1063/5.0017534.
Повний текст джерелаBallet, J., R. Leguerre, D. Delabouglise, F. Olivie, G. Sarrabayrouse, and A. Martinez. "Organic electronic devices using regioregular poly(3-octylthiophene) as a semiconducting material." In 2004 IEEE International Symposium on Industrial Electronics. IEEE, 2004. http://dx.doi.org/10.1109/isie.2004.1572018.
Повний текст джерелаSharda, Sunanda, Neha Sharma, Pankaj Sharma, and Vineet Sharma. "SbSeGe semiconducting alloys: Non-linear refractive index and susceptibility." In PROCEEDING OF INTERNATIONAL CONFERENCE ON RECENT TRENDS IN APPLIED PHYSICS AND MATERIAL SCIENCE: RAM 2013. AIP, 2013. http://dx.doi.org/10.1063/1.4810226.
Повний текст джерелаMasroor Shalmani, Maryam, T. Yan, James McRae, Emily P. Mostland, Risbel Rivas, Emma R. Ruano, Arthur McClelland, and Pratap M. Rao. "Controlling crystal growth of non-toxic Bismuth iodide (BiI3) semiconducting material for efficient photovoltaics." In Physics, Simulation, and Photonic Engineering of Photovoltaic Devices IX, edited by Alexandre Freundlich, Masakazu Sugiyama, and Stéphane Collin. SPIE, 2020. http://dx.doi.org/10.1117/12.2544043.
Повний текст джерелаChandrasekar, J., and Durgachalam Manikandan. "Chemically deposited semiconducting metal chalcogenide ins thin film and its application as photovoltaic material." In PROCEEDING OF INTERNATIONAL CONFERENCE ON ENERGY, MANUFACTURE, ADVANCED MATERIAL AND MECHATRONICS 2021. AIP Publishing, 2023. http://dx.doi.org/10.1063/5.0126537.
Повний текст джерелаЗвіти організацій з теми "Semiconducting material"
Matnishyan, Hakob A. Synthesis of New Organic Semiconducting Polymer Materials Having High Radiowave Absorption Rate. Fort Belvoir, VA: Defense Technical Information Center, November 2008. http://dx.doi.org/10.21236/ada494519.
Повний текст джерелаFeng, Pingyun. X-Ray Powder Diffractometer as a Structural Toll for the Development of Semiconducting Inorganic-Organic Composite Chalcogenides as Efficient Thermoelectric Materials. Fort Belvoir, VA: Defense Technical Information Center, April 2003. http://dx.doi.org/10.21236/ada416279.
Повний текст джерела