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Статті в журналах з теми "Reversed heme"
Reidl, J., and J. J. Mekalanos. "Lipoprotein e(P4) is essential for hemin uptake by Haemophilus influenzae." Journal of Experimental Medicine 183, no. 2 (February 1, 1996): 621–29. http://dx.doi.org/10.1084/jem.183.2.621.
Повний текст джерелаQian, XiaoWei, Hao Cheng, and XinZhong Chen. "Transient receptor potential melastatin 2–mediated heme oxygenase-1 has a role for bacterial clearance by regulating autophagy in peritoneal macrophages during polymicrobial sepsis." Innate Immunity 25, no. 8 (September 19, 2019): 530–38. http://dx.doi.org/10.1177/1753425919875796.
Повний текст джерелаSteiner, Alexandre A., Eduardo Colombari, and Luiz G. S. Branco. "Carbon monoxide as a novel mediator of the febrile response in the central nervous system." American Journal of Physiology-Regulatory, Integrative and Comparative Physiology 277, no. 2 (August 1, 1999): R499—R507. http://dx.doi.org/10.1152/ajpregu.1999.277.2.r499.
Повний текст джерелаLiu, Yunfeng, Fangmiao Jing, Woelsung Yi, Avital Mendelson, Patricia Shi, Ronald Walsh, David F. Friedman, et al. "HO-1hi patrolling monocytes protect against vaso-occlusion in sickle cell disease." Blood 131, no. 14 (April 5, 2018): 1600–1610. http://dx.doi.org/10.1182/blood-2017-12-819870.
Повний текст джерелаMikhael, Marc, Sameer Apte, Shan Soe-Lin, and Prem Ponka. "Nitrogen Monoxide Inhibits Heme Synthesis In Reticulocytes." Blood 116, no. 21 (November 19, 2010): 4252. http://dx.doi.org/10.1182/blood.v116.21.4252.4252.
Повний текст джерелаHodge, M. R., G. Kim, K. Singh, and M. G. Cumsky. "Inverse regulation of the yeast COX5 genes by oxygen and heme." Molecular and Cellular Biology 9, no. 5 (May 1989): 1958–64. http://dx.doi.org/10.1128/mcb.9.5.1958-1964.1989.
Повний текст джерелаHodge, M. R., G. Kim, K. Singh, and M. G. Cumsky. "Inverse regulation of the yeast COX5 genes by oxygen and heme." Molecular and Cellular Biology 9, no. 5 (May 1989): 1958–64. http://dx.doi.org/10.1128/mcb.9.5.1958.
Повний текст джерелаAlvarado, Gerardo, Attila Tóth, Éva Csősz, Gergő Kalló, Katalin Dankó, Zoltán Csernátony, Ann Smith, et al. "Heme-Induced Oxidation of Cysteine Groups of Myofilament Proteins Leads to Contractile Dysfunction of Permeabilized Human Skeletal Muscle Fibres." International Journal of Molecular Sciences 21, no. 21 (October 31, 2020): 8172. http://dx.doi.org/10.3390/ijms21218172.
Повний текст джерелаAhmad, Mansoor, Xiangmin Zhao, Melissa R. Kelly, Sharath Kandhi, Oscar Perez, Nader G. Abraham, and Michael S. Wolin. "Heme oxygenase-1 induction modulates hypoxic pulmonary vasoconstriction through upregulation of ecSOD." American Journal of Physiology-Heart and Circulatory Physiology 297, no. 4 (October 2009): H1453—H1461. http://dx.doi.org/10.1152/ajpheart.00315.2009.
Повний текст джерелаIwadate, Reiko, Yoko Satoh, Yukino Watanabe, Hiroshi Kawai, Naomi Kudo, Yoichi Kawashima, Tadahiko Mashino, and Atsushi Mitsumoto. "Impairment of heme biosynthesis induces short circadian period in body temperature rhythms in mice." American Journal of Physiology-Regulatory, Integrative and Comparative Physiology 303, no. 1 (July 1, 2012): R8—R18. http://dx.doi.org/10.1152/ajpregu.00019.2011.
Повний текст джерелаДисертації з теми "Reversed heme"
Silva, Ingrid de Oliveira e. "Inibição e reversão da maturação nuclear, avaliação da maturação citoplasmática e produção de esteróides em complexos cumulus oophorus bovinos co-cultivados com hemi-secções foliculares em meio de cultura definido." reponame:Repositório Institucional da UnB, 2008. http://repositorio.unb.br/handle/10482/1120.
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O presente trabalho teve o objetivo de padronizar um protocolo de pré-maturação, onde complexos cumulus oophorus (COCs- do inglês cumulus oocyte complex) bovinos imaturos são co-cultivados com hemi-secções foliculares (HS) em meio definido (α-MEM+PVA). No experimento 1 foi avaliado, o efeito deste co-cultivo pelo período de 24 horas na manutenção do estágio imaturo dos COCs. Os grupos experimentais avaliados foram: G1=TCM- 199+SFB+COCs; G2=TCM-199+SFB+HS+COCs; G3=α-MEM+PVA+COCs; G4=α- MEM+PVA+HS+COCs. No experimento 2, foi feita a avaliação do potencial de reversibilidade do processo inibitório após a pré-maturação, cultivando os COCs previamente pré-maturados em meio de maturação padrão (TCM-199+SFB). Os meios de cultivo destes experimentos foram armazenados a –20° C para posterior dosagem dos hormônios estradiol (E2) e progesterona (P4) com a utilização de kits de radioimunoensaio. Em média 4 COCs de cada tratamento dos experimentos 1 e 2 foram processados para análise da maturação citoplasmática ao microscópio eletrônico de transmissão. Os resultados do experimento 1 mostram que, os tratamentos G2, G3 e G4 foram efetivos na inibição da progressão da meiose, com respectivamente 81,2; 74,0 e 96,3% dos COCs imaturos. O tratamento G1 (controle) apresentou ao final do tempo de cultivo 83,1% de COCs maduros; P<0,05. No experimento 2, somente os grupos G1 e G3 apresentaram mais de 80% de oócitos maduros ao final das 24 horas de cultura em meio padrão. Os grupos G2 e G4 apresentaram apenas 29,1 e 16,3% respectivamente dos COCs maduros ao final do cultivo; P<0,05. A dosagem dos hormônios esteróides mostrou no experimento 1, que o grupo G3 apresentou a maior produção de E2 (2444,24 pg/mL) e menor produção de P4 (3,47 ng/mL); P<0,0001. A produção de P4 foi máxima no grupo G2 (77,87 ng/mL). A presença das HS promoveu o aumento da produção deste hormônio nos grupos G2 e G4. No experimento 2, a concentração de E2 foi maior no grupo pré-maturado em meio definido, assim como a concentração de P4, que foi significativamente maior neste tratamento (G3), 42,82 ng/mL; P< 0,0032. A análise ultraestrutural dos COCs mostrou que a presença das HS (grupos G2 e G4) provoca a morte destes ainda no período de pré-maturação. No grupo G3, foi observado que o meio de cultivo α-MEM+PVA promoveu o início da maturação citoplasmática durante a pré-maturação. No experimento 2, este processo foi completado após o cultivo em meio de maturação padrão. Conclui-se portanto que o meio de cultura α-MEM+PVA fornece um ambiente adequado para que os COCs sofram a pré-maturação, já que a relação E2:P4 neste sistema é condizente com a fase em que os COCs se encontram, além de que este meio propicia uma alta taxa de inibição da maturação nuclear seguida de uma grande porcentagem de reversão desta inibição. Outro fato importante foi que a maturação citoplasmática foi iniciada ainda no período de prématuração, e chegou a termo durante a maturação in vitro. O co-cultivo com HS, no entanto, não gerou resultados promissores. ___________________________________________________________________________________ ABSTRACT
This study aimed to standardize a physiological protocol of pre- maturation, where immature bovine cumulus oocyte complex (COCs) are co-cultured with follicular hemissections (HS) in defined medium (α-MEM + PVA). In the first experiment it was evaluated, the effect of this co-culture for the period of 24 hours in the maintenance of COCs’ immature stage. The following experimental groups evaluated were: G1=TCM-199 +FCS+COCs; G2=TCM- 199+FCS+HS+COCs; G3=α-MEM+PVA+COCs; G4=α-MEM+PVA+HS+COCs. The experiment 2 was performed to assess the reversibility potential of the inhibitory process after the pre-maturation. COCs previously pre-matured were cultured in standard medium of maturation (TCM-199 + SFB). The culture medium of these experiments were stored at -20° C for later dosage of hormones estradiol (E2) and progesterone (P4) with radioimmunoassay kits. On average 4 COCs of each treatment of experiments 1 and 2 were processed for cytoplasmic maturation analysis at the transmission electron microscope. The results of the experiment 1 show that the treatments G2, G3 and G4 were effective in maintain meiotic arrest, with 81.2, 74.0 and 96.3% respectively of immature COCs. Treatment G1 (control) showed at the end of culture 83.1% of mature COCs, P <0.05. In experiment 2, only the groups G1 and G3 showed more than 80% of mature oocytes at the end of 24 hours of culture in the medium standard. The groups G2 and G4 had only 29.1 and 16.3% respectively of the mature COCs at the end of the culture, P<0.05. The dosage of steroid hormones in Experiment 1 showed that the G3 had the highest production of E2 (2444.24 pg / mL) and lower production of P4 (3.47 ng / mL), P <0.0001. The production of P4 was the highest in group G2 (77.87 ng / mL). Due the presence of HS there was an increasing production of this hormone in groups G2 and G4. In experiment 2, the concentration of E2 was higher in group pre-matured in defined medium, as well as the concentration of P4, which was significantly higher in this treatment, 42.82 ng / mL, P<0.0032.The ultrastructural analysis of the COCs showed that the presence of HS (groups G2 and G4) causes the cellular death still in the prematuration culture. In group G3, it was observed that the medium α-MEM + PVA promoted the beginning of the cytoplasmic maturation during the pre-maturation. In experiment 2, this process has been completed after culture in standard maturation medium. It comes to the conclusion that the culture α-MEM + PVA provides a suitable environment for the COCs suffer a pre-maturation, as the relationship E2: P4 in this system is consistent with the stage in which the COCs are. In addition, this system provides a high rate of inhibition of nuclear maturation followed by a large percentage of reversal of this inhibition. Another important fact is that the cytoplasmic maturation began still in the prematuration period, and finished during in vitro maturation. The co-culture with HS, didn’t generate promising results.
Ronchi, Nicolò. "An investigation of defects and reliability issues on Gallium Nitride devices." Doctoral thesis, Università degli studi di Padova, 2012. http://hdl.handle.net/11577/3421973.
Повний текст джерелаL'argomento esposto in questa tesi riguarda uno studio approfondito di dispositivi su eterostruttura AlGaN/GaN. Questo lavoro puo’ essere suddiviso in due argomenti principali: la prima parte riguarda lo studio di trappole e difetti e il loro effetto sulle prestazioni del dispositivo; la seconda parte e’ invece dedicata allo studio dell'affidabilita’ di questo tipo di dispositivi. L'analisi degli effetti trappola e’ basata sulla misurazione impulsata della caratteristica di uscita e della transconduttanza del dispositivo in esame. Le misure eseguite su transistor con diversa composizione dell'elettrodo di gate (Ni/Au/Ni o ITO) e presenza o assenza dello strato di passivazione hanno mostrato come questa tecnica puo’ essere utilizzata come rapido e valido sistema per distinguere tra gli effetti di trappole presenti nella regione sottostante il gate e quelli di trappole nella regione di accesso gate - drain. In dettaglio si e’ visto che dispositivi non passivati presentano una diminuzione del picco della transconduttanza, fenomeno riconducibile alla presenza di trappole superficiali; mentre nel caso di variazione della tensione di soglia (dispositivi con elettrodo di gate in ITO) le trappole sono localizzate nella regione al di sotto del contatto di gate. La presenza di trappole sotto il contatto in ITO e’ stata inoltre confermata da misure di capacita’ vs. tensione a bassa frequenza. Le misure impulsate sono state poi messe in relazione con le misure di elettroluminescenza effettuate sui transistor: questo confronto ha mostrato come le trappole presenti nel dispositivo limitino il massimo campo elettrico tra gate e drain e quindi l'intensita’ della radiazione emessa. Questa metodologia e’ stata poi applicata per l'analisi di dispositivi GaN su silicio caratterizzati da identica lunghezza del contatto di gate ma diversa ampiezza del recesso di gate. Dai risultati ottenuti si puo’ vedere che le prestazioni migliori, in termini di dispersione in frequenza e massimo campo elettrico, si hanno nei dispositivi con recesso piu’ piccolo. L'analisi dei difetti presenti nei dispositivi su GaN e’ stata effettuata anche per mezzo di misure di rumore a bassa frequenza. Lo scopo di questa parte di attivita’ era di trovare una correlazione tra il livello di rumore misurato e le caratteristiche elettriche del dispositivo (in particolare il breakdown). Diversi dispositivi sono stati testati (transistor e transmission line model - TLM) con differenti tecnologie di realizzazione (percentuale di alluminio, temperatura di processo, composizione dell'elettrodo dei contatti ohmici). Una correlazione rumore del canale conduttivo e breakdown non e’ stata trovata; mentre le misure sulle TLM hanno mostrato un possibile legame tra rumore e resistenza specifica del contatto ohmico. L'affidabilita’ dei dispositivi è stata studiata per mezzo di prove di stress a breve (2 min step - stress) e lungo termine (1000 hour). Lo stress a lungo termine e’ stato eseguito su dispositivi AlGaN/GaN processati su substrato composito di tipo SopSiC sviluppato nell'ambito del progetto europeo HYPHEN. Questi substrati sono realizzati tramite il trasferimento di un sottile strato di Silicio monocristallino su uno strato piu’ spesso di Carburo di Silicio policristallino, il loro scopo e’ di rappresentare una valida ed economica alternativa ai substrati in Carburo di Silicio monocristallino. Per questo esperimento sono state individuate tre condizioni a differente polarizzazione e temperatura; i risultati finali presentano una buona stabilita’ dei dispositivi ed inoltre mostrano come i problemi riscontrati durante il test siano riconducibili agli elevati livelli di corrente di perdita del gate. Il degrado dei dispositivi e’ quindi strettamente legato alla tecnologia del processo utilizzato per la realizzazione del transistor e non e’ legata alla natura del substrato. Per quanto riguarda la prova di stress accelerato, si e’ studiato l'effetto sulle prestazioni del dispositivo di elevate tensioni negative applicate al contatto di gate. Questo tipo di test solitamente porta all'individuazione di una tensione critica oltre la quale si verifica un brusco aumento della corrente di gate. Nella letteratura scientifica questo fenomeno e’ indicato come effetto piezoelettrico inverso (inverse piezoelectric effect) ed e’ associato alla creazione di difetti nel reticolo cristallino sottoposto a sollecitazione durante lo stress. Lo studio si e’ basato su un wafer con differenti metallizzazioni di gate (Ni/Au/Ni, ITO, Ni/ITO) e con passivazione dei dispositivi. I risultati ottenuti suggeriscono che la tensione critica non sia legata solo alla tensione che si induce nel reticolo; infatti anche il livello iniziale della corrente di perdita del gate sembra giocare un ruolo nel processo di degradazione. Inoltre l'evoluzione del degrado durante il test sembra indicare che il processo di invecchiamento avvenga per filtrazione dei difetti all'interno della barriera di AlGaN (percolation process)
Caviness, James A. "Stress biomarkers in a rat model of decompression sickness /." Download the thesis in PDF, 2005. http://www.lrc.usuhs.mil/dissertations/pdf/Caviness2005.pdf/.
Повний текст джерелаMilazzo, Lisa. "How resonance Raman spectroscopy can give valuable insights into diverse aspects of heme protein structure and function." Doctoral thesis, 2019. http://hdl.handle.net/2158/1154362.
Повний текст джерелаPrakash, Shankaran. "Efekt hem arginátu na akutní infekci HIV-1 a na reaktivaci latentní infekce." Doctoral thesis, 2016. http://www.nusl.cz/ntk/nusl-354437.
Повний текст джерелаКниги з теми "Reversed heme"
McWhirter, Darien A. The end of affirmative action: Where do we go from here? New York: Carol Pub. Group, 1996.
Знайти повний текст джерелаLommen, Mathieu. Irma Boom: biography in books: Books in reverse chronological order, 2010-1986 : with comments here and there. Amsterdam: Special Collections UvA, 2010.
Знайти повний текст джерела"Prohibition is here to stay": The Reverend Edward S. Shumaker and the dry crusade in America. Notre Dame, Ind: University of Notre Dame Press, 2009.
Знайти повний текст джерелаFrazer, J. A. Reverse Engineering: Hype, Hope or Here. Cutter Information Corp, 1991.
Знайти повний текст джерелаHere by Assignment: The Reverend Archie Ivy Story. BookBaby, 2020.
Знайти повний текст джерелаDetlefsen, Michael. Formalism. Edited by Stewart Shapiro. Oxford University Press, 2009. http://dx.doi.org/10.1093/oxfordhb/9780195325928.003.0008.
Повний текст джерелаBressan, Paola, and Peter Kramer. The Dungeon Illusion. Oxford University Press, 2017. http://dx.doi.org/10.1093/acprof:oso/9780199794607.003.0040.
Повний текст джерелаWe're All Mad Here: A Dark Alice in Wonderland Reverse Harem. Independently Published, 2022.
Знайти повний текст джерелаRenmeleon and Ana Maria Selvaggio. From Here to There: Reverse-Engineer the Life You Want into Being. Dragonfly Press Publishing, 2021.
Знайти повний текст джерелаWaldmann, Carl, Neil Soni, and Andrew Rhodes. Respiratory drugs. Oxford University Press, 2011. http://dx.doi.org/10.1093/med/9780199229581.003.0010.
Повний текст джерелаЧастини книг з теми "Reversed heme"
Patel, Shaan S., and Mark A. Frankle. "Hemi, Conventional, and Reverse Total Shoulder Arthroplasty for the Treatment of Proximal Humerus Fractures." In Arthroplasty for the Treatment of Fractures in the Older Patient, 33–52. Cham: Springer International Publishing, 2018. http://dx.doi.org/10.1007/978-3-319-94202-5_3.
Повний текст джерелаChochinov, Claire A., and Alex N. Nguyen Ba. "Bulk-Fitness Measurements Using Barcode Sequencing Analysis in Yeast." In Methods in Molecular Biology, 399–415. New York, NY: Springer US, 2022. http://dx.doi.org/10.1007/978-1-0716-2257-5_22.
Повний текст джерелаAlegria, Guillermo, Christopher C. Moser, and P. Leslie Dutton. "Pulsed Electric Field Induced Reverse Electron Transfer from Ground State Bchl2 to the Cytochrome c Hemes in Rps. viridis." In The Photosynthetic Bacterial Reaction Center II, 313–19. Boston, MA: Springer US, 1992. http://dx.doi.org/10.1007/978-1-4615-3050-3_35.
Повний текст джерелаLobo, Daniel. "Formalizing Phenotypes of Regeneration." In Methods in Molecular Biology, 663–79. New York, NY: Springer US, 2022. http://dx.doi.org/10.1007/978-1-0716-2172-1_36.
Повний текст джерелаRentz, Niklas, Steven Smyth, Lewe Andersen, and Reinhard von Hanxleden. "Extracting Interactive Actor-Based Dataflow Models from Legacy C Code." In Diagrammatic Representation and Inference, 361–77. Cham: Springer International Publishing, 2021. http://dx.doi.org/10.1007/978-3-030-86062-2_37.
Повний текст джерелаPort, Fillip, and Michael Boutros. "Tissue-Specific CRISPR-Cas9 Screening in Drosophila." In Methods in Molecular Biology, 157–76. New York, NY: Springer US, 2022. http://dx.doi.org/10.1007/978-1-0716-2541-5_7.
Повний текст джерелаKaiser-Bunbury, Christopher N., and Benno I. Simmons. "Restoration of pollination interactions in communities invaded by non-native plants." In Plant invasions: the role of biotic interactions, 377–90. Wallingford: CABI, 2020. http://dx.doi.org/10.1079/9781789242171.0377.
Повний текст джерелаHell, Wolfram, Kurt Bodewig, Ute Hammer, Christian Kellner, Clemens Klinke, Matthias Mück, Martin Schreiner, Felix Walz, and Guido Zielke. "Vision Zero in Germany." In The Vision Zero Handbook, 337–57. Cham: Springer International Publishing, 2022. http://dx.doi.org/10.1007/978-3-030-76505-7_13.
Повний текст джерелаHell, Wolfram, Kurt Bodewig, Ute Hammer, Christian Kellner, Clemens Klinke, Matthias Mück, Martin Schreiner, Felix Walz, and Guido Zielke. "Vision Zero in Germany." In The Vision Zero Handbook, 1–21. Cham: Springer International Publishing, 2022. http://dx.doi.org/10.1007/978-3-030-23176-7_13-1.
Повний текст джерелаWalke, Anna, Eric Suero Molina, Walter Stummer, and Simone König. "Protoporphyrin IX Analysis from Blood and Serum in the Context of Neurosurgery of Glioblastoma." In Mass Spectrometry [Working Title]. IntechOpen, 2020. http://dx.doi.org/10.5772/intechopen.95042.
Повний текст джерелаТези доповідей конференцій з теми "Reversed heme"
Reiner, Richard, Patrick Waltereit, Beatrix Weiss, Matthias Wespel, Rudiger Quay, Michael Schlechtweg, Michael Mikulla, and Oliver Ambacher. "Integrated reverse-diodes for GaN-HEMT structures." In 2015 IEEE 27th International Symposium on Power Semiconductor Devices & IC's (ISPSD). IEEE, 2015. http://dx.doi.org/10.1109/ispsd.2015.7123385.
Повний текст джерелаSorensen, Charlie, Martin Lindblad Fogsgaard, Michael Noe Christiansen, Mads Kjeldal Graungaard, Jacob Bitcsh Norgaard, Christian Uhrenfeldt, and Ionut Trintis. "Conduction, reverse conduction and switching characteristics of GaN E-HEMT." In 2015 IEEE 6th International Symposium on Power Electronics for Distributed Generation Systems (PEDG). IEEE, 2015. http://dx.doi.org/10.1109/pedg.2015.7223051.
Повний текст джерелаWang, Yuansheng, Chang Zeng, and Ping Lai. "Degradation in AlGaN/GaN HEMT under high temperature reverse bias stress." In 2014 International Conference on Reliability, Maintainability and Safety (ICRMS). IEEE, 2014. http://dx.doi.org/10.1109/icrms.2014.7107161.
Повний текст джерелаChengzhan, Li, Liu Jian, Liu Xinyu, Liu Guoguo, Liu Dan, Chen Xiaojuan, and He Zhijing. "Effect of Passivation on Increasing of AlGaN/GaN HEMT Gate Reverse Leakage." In 2006 8th International Conference on Solid-State and Integrated Circuit Technology Proceedings. IEEE, 2006. http://dx.doi.org/10.1109/icsict.2006.306568.
Повний текст джерелаGorbunov-Possadov, Mikhail Mikhailovich. "Reverse Bibliography." In 23rd Scientific Conference “Scientific Services & Internet – 2021”. Keldysh Institute of Applied Mathematics, 2021. http://dx.doi.org/10.20948/abrau-2021-4s-ceur.
Повний текст джерелаRogovin, D., J. Scholl, and T. P. Shen. "Two-beam coupling in electromagnetically aligned shaped microparticle suspensions." In OSA Annual Meeting. Washington, D.C.: Optica Publishing Group, 1992. http://dx.doi.org/10.1364/oam.1992.tuz35.
Повний текст джерелаChampion, P. M., J. T. Sage, and P. Li. "Resonance Raman Studies of Electronic and Vibrational Relaxation Dynamics in Heme Proteins." In International Conference on Ultrafast Phenomena. Washington, D.C.: Optica Publishing Group, 1992. http://dx.doi.org/10.1364/up.1992.tuc6.
Повний текст джерелаLei, Jiacheng, Jin Wei, Gaofei Tang, and Kevin J. Chen. "Reverse-blocking AlGaN/GaN normally-off MIS-HEMT with double-recessed gated Schottky drain." In 2018 IEEE 30th International Symposium on Power Semiconductor Devices and ICs (ISPSD). IEEE, 2018. http://dx.doi.org/10.1109/ispsd.2018.8393656.
Повний текст джерелаLu, Meng, Yiqiang Chen, Min Liao, Chang Liu, Shuaizhi Zheng, and Kexin Gao. "Degradation mechanism of D-mode GaN HEMT based on high temperature reverse bias stress." In 2021 IEEE Workshop on Wide Bandgap Power Devices and Applications in Asia (WiPDA Asia). IEEE, 2021. http://dx.doi.org/10.1109/wipdaasia51810.2021.9656047.
Повний текст джерелаKurumatani, Hiroki, and Seiichiro Katsura. "GaN-HEMT-based three level T-type NPC inverter using reverse-conducting mode in rectifying." In 2017 IEEE 26th International Symposium on Industrial Electronics (ISIE). IEEE, 2017. http://dx.doi.org/10.1109/isie.2017.8001548.
Повний текст джерелаЗвіти організацій з теми "Reversed heme"
Pshezhetskiy, Dmitry, Tanveer Alam, and Heba Alshaker. Unsynchronised Cardioversion as a Cause of Ventricular Tachycardia in a Patient with Atrial Fibrillation. Nature Library, November 2020. http://dx.doi.org/10.47496/nl.ccr.2020.01.02.
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Повний текст джерелаSchiller, Brandon, Tara Hutchinson, and Kelly Cobeen. Cripple Wall Small-Component Test Program: Wet Specimens II (PEER-CEA Project). Pacific Earthquake Engineering Research Center, University of California, Berkeley, CA, November 2020. http://dx.doi.org/10.55461/ldbn4070.
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