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Статті в журналах з теми "Reliability of metallic interconnects"
Zhao, Wen-Sheng, Kai Fu, Da-Wei Wang, Meng Li, Gaofeng Wang, and Wen-Yan Yin. "Mini-Review: Modeling and Performance Analysis of Nanocarbon Interconnects." Applied Sciences 9, no. 11 (May 28, 2019): 2174. http://dx.doi.org/10.3390/app9112174.
Повний текст джерелаKuruvilla, Nisha, J. P. Raina, Arun Greig John, and A. Athulya. "Performance and Reliability Analysis of Bundled SWCNT as IC Interconnects." Advanced Materials Research 129-131 (August 2010): 920–25. http://dx.doi.org/10.4028/www.scientific.net/amr.129-131.920.
Повний текст джерелаKatkar, Rajesh, Michael Huynh, and Laura Mirkarimi. "Electromigration Reliability of Cu Pillar on Substrate Interconnects in High Performance Flip Chip Packages." Additional Conferences (Device Packaging, HiTEC, HiTEN, and CICMT) 2011, DPC (January 1, 2011): 002404–23. http://dx.doi.org/10.4071/2011dpc-tha33.
Повний текст джерелаGelatos, A. V., A. Jain, R. Marsh, and C. J. Mogab. "Chemical Vapor Deposition of Copper for Advanced On-Chip Interconnects." MRS Bulletin 19, no. 8 (August 1994): 49–54. http://dx.doi.org/10.1557/s0883769400047734.
Повний текст джерелаSasagawa, K., N. Yamaji, and S. Fukushi. "Threshold Current Density of Electromigration Damage in Angled Polycrystalline Line." Key Engineering Materials 353-358 (September 2007): 2958–61. http://dx.doi.org/10.4028/www.scientific.net/kem.353-358.2958.
Повний текст джерелаChen, Giin-Shan, Ching-En Lee, Yi-Lung Cheng, Jau-Shiung Fang, Chien-Nan Hsiao, Wei-Chun Chen, Yiu-Hsiang Chang, Yen-Chang Pan, Wei Lee, and Ting-Hsun Su. "Enhancement of Electromigration Reliability of Electroless-Plated Nanoscaled Copper Interconnects by Complete Encapsulation of a 1 nm-Thin Self-Assembled Monolayer." Journal of The Electrochemical Society 169, no. 8 (August 1, 2022): 082519. http://dx.doi.org/10.1149/1945-7111/ac89b8.
Повний текст джерелаXu, Zhijie, Wei Xu, Elizabeth Stephens, and Brian Koeppel. "Mechanical reliability and life prediction of coated metallic interconnects within solid oxide fuel cells." Renewable Energy 113 (December 2017): 1472–79. http://dx.doi.org/10.1016/j.renene.2017.06.103.
Повний текст джерелаSaito, T., H. Ashihara, K. Ishikawa, M. Miyauchi, Y. Yamada, and H. Nakano. "A Reliability Study of Barrier-Metal-Clad Copper Interconnects With Self-Aligned Metallic Caps." IEEE Transactions on Electron Devices 51, no. 12 (December 2004): 2129–35. http://dx.doi.org/10.1109/ted.2004.838512.
Повний текст джерелаAmoah, Papa K., Christopher E. Sunday, Chukwudi Okoro, Jungjoon Ahn, Lin You, Dmitry Veksler, Joseph Kopanski, and Yaw Obeng. "(Invited) Towards the Physical Reliability of 3D-Integrated Systems: Broadband Dielectric Spectroscopic (BDS) Studies of Material Evolution and Reliability in Integrated Systems." ECS Meeting Abstracts MA2022-02, no. 17 (October 9, 2022): 859. http://dx.doi.org/10.1149/ma2022-0217859mtgabs.
Повний текст джерелаHau-Riege, Stefan P., and Carl V. Thompson. "The Effects of the Mechanical Properties of the Confinement Material on Electromigration in Metallic Interconnects." Journal of Materials Research 15, no. 8 (August 2000): 1797–802. http://dx.doi.org/10.1557/jmr.2000.0259.
Повний текст джерелаДисертації з теми "Reliability of metallic interconnects"
Gurrum, Siva P. "Thermal Modeling and Characterization of Nanoscale Metallic Interconnects." Diss., Georgia Institute of Technology, 2006. http://hdl.handle.net/1853/10435.
Повний текст джерелаChoi, Zung-Sun. "Reliability of copper interconnects in integrated circuits." Thesis, Massachusetts Institute of Technology, 2007. http://hdl.handle.net/1721.1/39553.
Повний текст джерелаIncludes bibliographical references.
As dimensions shrink and current densities increase, the reliability of metal interconnects becomes a serious concern. In copper interconnects, the dominant diffusion path is along the interface between the copper and the top passivation layer (usually Si3N4). One of the predominant failure mechanisms in Cu has been open-circuit failure due to electromigration-induced void nucleation and growth near the cathode ends of interconnect segments. However, results from accelerated electromigration tests show that the simple failure analyses based on simple void nucleation and growth can not explain the wide range of times-to-failure that are observed, suggesting that other types of failure mechanisms are present. In this thesis, by devising and performing unique experiments through the development of an electromigration simulation tool, unexpected complex failure mechanisms have been identified that have significant effects on the reliability of copper interconnects. A simulation tool was developed by implementing the one-dimensional non-linear differential equation model first described by Korhonen et al. By applying an implicit method (Backward Euler method), the calculation time was significantly reduced, and stability increased, compared to previous tools based on explicit methods (Forward Euler method).
(cont.) The tool was crosschecked with experimental results by comparing void growth rates in simulations and experiments. Using this tool, one can simulate stress and atomic concentration states over the entire length of an interconnect segment or throughout a multi-segment interconnect tree, to identify analyze possible failure locations and mechanisms. Experiments were carried out on dotted-i structures, where two 25jim-lomg segments were connected by a via in the middle. Electrical currents were applied to the two segments independently, and lifetime effects of adjacent segments were determined. Using the simulation tool and calculations, it was shown that adjacent segments have a significant effect on a segment's stress state, even if the adjacent segment has no electrical current. This explains experimental observations. This also suggests that for reliability analyses to be accurate, the states of all adjacent segments must be considered, including the ones without electrical current. In a second set of experiments, the importance of pre-existing voids was investigated. Using in-situ scanning electron microscopy, voids away from the cathode were observed. These voids grew and drifted toward the cathode and the shape of the voids were found to be closely related to the texture and stress state of individual grains in the interconnect.
(cont.) The drift velocity of voids was shown to be directly proportional to surface diffusivity. Electromigration tests on unpassivated samples were performed under vacuum to obtain the surface diffusivity of copper and its dependence on texture orientations. Simulation results show that pre-existing voids cause void growth away from the cathode. Subsequent failure mechanisms differ depending on the location of the pre-existing void and the critical void volume for de-pinning from grain boundaries. If pre-existing voids are present, void-growth-limited failure is expected in interconnects at low current densities, due to growth of pre-existing void, and the lifetimes are expected to scale inversely with j. However, at higher current densities (typical for accelerated testing), failure can occur through nucleation of new voids at the cathode (so that lifetimes scale inversely with j2), or through a mixture of nucleation of new voids and growth of pre-existing voids. These effects must be taken into account to accurately project the reliability of interconnects under service conditions, based on experiments carried out under accelerated conditions.
by Zung-Sun Choi.
Ph.D.
Garcia-Vargas, Maria José. "Oxidation behaviour of potential materials for metallic SOFC interconnects." Lille 1, 2006. https://pepite-depot.univ-lille.fr/RESTREINT/Th_Num/2006/50376_2006_208.pdf.
Повний текст джерелаGall, Martin. "Investigation of electromigration reliability in Al(Cu) interconnects /." Digital version accessible at:, 1999. http://wwwlib.umi.com/cr/utexas/main.
Повний текст джерелаBashir, Muhammad Muqarrab. "Modeling reliability in copper/low-k interconnects and variability in cmos." Diss., Georgia Institute of Technology, 2011. http://hdl.handle.net/1853/41092.
Повний текст джерелаGarcia-Vargas, Maria J. [Verfasser]. "Oxidation behaviour of potential materials for metallic SOFC interconnects / Maria J Garcia-Vargas." Aachen : Shaker, 2007. http://d-nb.info/1170527221/34.
Повний текст джерелаZheng, Yunqi. "Effect of surface finishes and intermetallics on the reliability of SnAgCu interconnects." College Park, Md. : University of Maryland, 2005. http://hdl.handle.net/1903/2427.
Повний текст джерелаThesis research directed by: Mechanical Engineering. Title from t.p. of PDF. Includes bibliographical references. Published by UMI Dissertation Services, Ann Arbor, Mich. Also available in paper.
Lee, Kitae 1966. "The influence of texture on the reliability of aluminum and copper interconnects /." Thesis, McGill University, 2000. http://digitool.Library.McGill.CA:80/R/?func=dbin-jump-full&object_id=37759.
Повний текст джерелаThe influence of texture on electromigration and stress-induced failures in aluminum interconnects was studied since these are the most often responsible for failures observed in aluminum interconnects. Results obtained showed that a strong {111} texture in aluminum interconnects improves their median time-to-failure. The grain boundary character distribution and percentage of coincidence site lattice (CSL) boundaries, was quantified using orientation imaging microscopy. It was found that the median time-to-failure of specimens increased as the number of low angle and CSL boundaries increased. These boundaries are known to have low diffusivity. It was also demonstrated that while the investigated specimens had grains of comparable size, the grains of similar orientations were clustered in the specimens having the stronger {111} texture. This phenomenon contributed to the longer median time-to-failure of the interconnects by reducing the frequency of high angle grain boundaries. The experimental data obtained shows that the residual stress in films decreases as the intensity of the {111} texture increases. A model based on Monte-Carlo simulation of texture formation during the deposition of aluminum film was proposed to suggest the optimum conditions for a growth of a strong {111} texture component. A low deposition rate and a high mobility of atoms on the surface, which corresponds to a high substrate temperature, can strengthen {111} texture.
Copper has been recently used as an interconnecting material because of its good electromigration resistance and low electrical resistivity. One of the major problems of copper as an interconnecting material is that it easily oxidizes at relatively low temperatures. The formation of oxide degrades the electrical and mechanical properties of copper interconnects. The influence of substrate texture on the oxidation kinetics was studied to suggest methods to reduce copper oxidation. Copper single crystals having (100), (110), (123), (314), (111) and (311) orientations were oxidized at 200ºC in air. Only the Cu2O phase was formed during oxidation. The oxidation of the (100) single crystal substrate was much faster than that of the others. This is attributed to a large number of fine oxide grains on the (100) crystal in the initial stages of oxidation. It is recommended that the {100} texture in copper interconnects should be avoided in order to reduce oxidation rate. A quantitative model was proposed to predict the oxidation kinetics of copper from the texture of the specimens. Reasonable agreement was obtained comparing the model predictions and the experimental results obtained from the test of oxidation of polycrystalline copper specimens. However, further improvement of the model can be done if more data from single crystal experiments are obtained.
Srikar, V. T. (Vengallatore Thattai) 1972. "Electromigration behavior and reliability of bamboo Al(Cu) interconnects for integrated circuits." Thesis, Massachusetts Institute of Technology, 1999. http://hdl.handle.net/1721.1/85249.
Повний текст джерелаSarvari, Reza. "Impact of size effects and anomalous skin effect on metallic wires as GSI interconnects." Diss., Atlanta, Ga. : Georgia Institute of Technology, 2008. http://hdl.handle.net/1853/31636.
Повний текст джерелаCommittee Chair: Meindl, James D.; Committee Member: Davis, Jeffrey A.; Committee Member: Gaylord, Thomas K.; Committee Member: Hess, Dennis W.; Committee Member: Peterson, Andrew F. Part of the SMARTech Electronic Thesis and Dissertation Collection.
Книги з теми "Reliability of metallic interconnects"
Digital signal integrity: Modeling and simulation with interconnects and packages. Upper Saddle River, NJ: Prentice Hall PTR, 2001.
Знайти повний текст джерелаElectromigration in thin films and electronic devices: Materials and reliability. Oxford: Woodhead Publishing, 2011.
Знайти повний текст джерелаGunawan, Indra. Fundamentals of reliability engineering: Applications in multistage interconnection networks. Hoboken, N.J: John Wiley & Sons, Inc., 2014.
Знайти повний текст джерелаWei dian zi ji shu de ke kao xing: Hu lian , qi jian ji xi tong = Reliability of Microtechnology : Interconnects, Devices and Systems. Beijing: Ke xue chu ban she, 2013.
Знайти повний текст джерелаSymposium on Reliability of Metals in Electronics (1995 Reno, Nev.). Proceedings of the Symposium on Reliability of Metals in Electronics. Pennington, NJ: Electrochemical Society, 1995.
Знайти повний текст джерелаSymposium F, "Materials, Technology and Reliability of Low-K Dielectrics and Copper Interconnects" (2006 San Francisco, Calif.). Materials, technology and reliability of low-k dielectrics and copper interconnects: Symposium held April 18-21, 2006, San Francisco, California, U.S.A. Edited by Tsui Ting Y and Materials Research Society Meeting. Warrendale, Pa: Materials Research Society, 2006.
Знайти повний текст джерелаSymposium F, "Materials, Technology and Reliability of Low-K Dielectrics and Copper Interconnects" (2006 San Francisco, Calif.). Materials, technology and reliability of low-k dielectrics and copper interconnects: Symposium held April 18-21, 2006, San Francisco, California, U.S.A. Edited by Tsui Ting Y and Materials Research Society Meeting. Warrendale, Pa: Materials Research Society, 2006.
Знайти повний текст джерелаSymposium F, "Materials, Technology and Reliability of Low-K Dielectrics and Copper Interconnects" (2006 San Francisco, Calif.). Materials, technology and reliability of low-k dielectrics and copper interconnects: Symposium held April 18-21, 2006, San Francisco, California, U.S.A. Edited by Tsui Ting Y and Materials Research Society Meeting. Warrendale, Pa: Materials Research Society, 2006.
Знайти повний текст джерелаJ, McKerrow Andrew, Materials Research Society Meeting, and Symposim on Materials, Technology and Reliability for Advanced Interconnects and Low-k Dielectrics (2003 : San Francisco, Calif.), eds. Materials, technology and reliability for advanced interconnects and low-k dielectrics, 2003: Symposium held April 21-25, 2003, San Francisco, California, U.S.A. Warrendale, Pa: Materials Research Society, 2003.
Знайти повний текст джерелаMaex, Karen. Materials, technology and reliability for advanced interconnects and low-k dielectrics: Symposium held April 23-27, 2000, San Fransico, California, U.S.A. Warrendale, Pa: Materials Research Society, 2001.
Знайти повний текст джерелаЧастини книг з теми "Reliability of metallic interconnects"
King, Mark K., and Manoj K. Mahapatra. "Protective Coatings for SOFC Metallic Interconnects." In Proceeding of the 42nd International Conference on Advanced Ceramics and Composites, 149–58. Hoboken, NJ, USA: John Wiley & Sons, Inc., 2019. http://dx.doi.org/10.1002/9781119543343.ch14.
Повний текст джерелаMenzler, Norbert H., Frank Tietz, Martin Bram, Izaak C. Vinke, and L. G. J. Bert de Haart. "Degradation Phenomena in SOFCs with Metallic Interconnects." In Advances in Solid Oxide Fuel Cells IV, 93–104. Hoboken, NJ, USA: John Wiley & Sons, Inc., 2009. http://dx.doi.org/10.1002/9780470456309.ch9.
Повний текст джерелаVanstreels, Kris, Han Li, and Joost J. Vlassak. "Mechanical Reliability of Low-k Dielectrics." In Advanced Interconnects for ULSI Technology, 339–67. Chichester, UK: John Wiley & Sons, Ltd, 2012. http://dx.doi.org/10.1002/9781119963677.ch10.
Повний текст джерелаOates, Anthony S., Richard C. Blish, Gennadi Bersuker, and Lu Kasprzak. "Reliability of Electron Devices, Interconnects and Circuits." In Guide to State-of-the-Art Electron Devices, 107–19. Chichester, UK: John Wiley & Sons, Ltd, 2013. http://dx.doi.org/10.1002/9781118517543.ch9.
Повний текст джерелаHu, Chao-Kun, René Hübner, Lijuan Zhang, Meike Hauschildt, and Paul S. Ho. "Scaling and Microstructure Effects on Electromigration Reliability for Cu Interconnects." In Advanced Interconnects for ULSI Technology, 291–337. Chichester, UK: John Wiley & Sons, Ltd, 2012. http://dx.doi.org/10.1002/9781119963677.ch9.
Повний текст джерелаZhu, Q. S., H. Y. Liu, L. Zhang, Q. L. Zeng, Z. G. Wang, and J. K. Shang. "Electromechanical Coupling in Sn-Rich Solder Interconnects." In Lead-Free Solders: Materials Reliability for Electronics, 251–71. Chichester, UK: John Wiley & Sons, Ltd, 2012. http://dx.doi.org/10.1002/9781119966203.ch10.
Повний текст джерелаFu, Bo, and Paul Ampadu. "Solutions to Improve the Reliability of On-Chip Interconnects." In Error Control for Network-on-Chip Links, 17–31. New York, NY: Springer New York, 2011. http://dx.doi.org/10.1007/978-1-4419-9313-7_2.
Повний текст джерелаQuadakkers, W. J., J. Piron-Abellan, V. Shemet, and L. Singheiser. "Suitability of Metallic Materials for Interconnects in Solid Oxide Fuel Cells." In New and Renewable Technologies for Sustainable Development, 391–98. Boston, MA: Springer US, 2002. http://dx.doi.org/10.1007/978-1-4615-0296-8_31.
Повний текст джерелаKhatibi, Golta, Herbert Ipser, Martin Lederer, and Brigitte Weiss. "Influence of Miniaturization on Mechanical Reliability of Lead-Free Solder Interconnects." In Lead-Free Solders: Materials Reliability for Electronics, 443–85. Chichester, UK: John Wiley & Sons, Ltd, 2012. http://dx.doi.org/10.1002/9781119966203.ch18.
Повний текст джерелаYang, Zhenguo, Guanguang Xia, and Jeffry W. Stevenson. "Electrical Contacts Between Cathodes and Metallic Interconnects in Solid Oxide Fuel Cells." In Ceramic Engineering and Science Proceedings, 217–24. Hoboken, NJ, USA: John Wiley & Sons, Inc., 2008. http://dx.doi.org/10.1002/9780470291245.ch25.
Повний текст джерелаТези доповідей конференцій з теми "Reliability of metallic interconnects"
Sasagawa, Kazuhiko, Akihiko Kirita, Takehiro Abo, and Abdul Hafiz Nor Hassan. "Numerical Simulation of Threshold Current Density of Electromigration Damage in Cu Interconnect Tree." In ASME 2009 InterPACK Conference collocated with the ASME 2009 Summer Heat Transfer Conference and the ASME 2009 3rd International Conference on Energy Sustainability. ASMEDC, 2009. http://dx.doi.org/10.1115/interpack2009-89229.
Повний текст джерелаPark, S. B., and Ganesh R. Iyer. "The Role of Intermetallics in Electromigration in Solder Pumps for Lead Free Solder Structure and Its Solder Pad Combination." In ASME 2004 International Mechanical Engineering Congress and Exposition. ASMEDC, 2004. http://dx.doi.org/10.1115/imece2004-62494.
Повний текст джерелаAlajlouni, Sami, Kerry Maize, Peter Bermel, and Ali Shakouri. "Thermoreflectance Imaging of Electromigration in Aluminum Interconnects at Different Ambient Temperatures." In ASME 2019 International Technical Conference and Exhibition on Packaging and Integration of Electronic and Photonic Microsystems. American Society of Mechanical Engineers, 2019. http://dx.doi.org/10.1115/ipack2019-6413.
Повний текст джерелаAmalu, E. H., N. N. Ekere, and G. Aminu. "Effects of inter-metallic compound on high temperature reliability of flip chip interconnects for fine pitch applications." In Technology (ICAST). IEEE, 2011. http://dx.doi.org/10.1109/icastech.2011.6145173.
Повний текст джерелаSasagawa, Kazuhiko, and Shota Fukushi. "Evaluation of Threshold Current Density of Electromigration Damage in Angled Bamboo Lines." In ASME 2007 InterPACK Conference collocated with the ASME/JSME 2007 Thermal Engineering Heat Transfer Summer Conference. ASMEDC, 2007. http://dx.doi.org/10.1115/ipack2007-33237.
Повний текст джерелаHoriuchi, Ryota, Kazuhiko Sasagawa, and Kazuhiro Fujisaki. "Damage of Flexible Electronic Line Under Mechanical and Electrical Stress Loading." In ASME 2021 International Technical Conference and Exhibition on Packaging and Integration of Electronic and Photonic Microsystems. American Society of Mechanical Engineers, 2021. http://dx.doi.org/10.1115/ipack2021-68902.
Повний текст джерелаBeniam, Iyoel, Scott A. Mathews, Nicholas A. Charipar, Raymond C. Y. Auyeung, and Alberto Piqué. "Laser printing of 3D metallic interconnects." In SPIE LASE, edited by Bo Gu, Henry Helvajian, and Alberto Piqué. SPIE, 2016. http://dx.doi.org/10.1117/12.2213646.
Повний текст джерелаSaito, Daiki, Kazuhiko Sasagawa, Takeshi Moriwaki, and Kazuhiro Fujisaki. "Damage of Flexible Electronic Line Printed With Ag Nanoparticle Ink due to High-Current Density." In ASME 2019 International Technical Conference and Exhibition on Packaging and Integration of Electronic and Photonic Microsystems. American Society of Mechanical Engineers, 2019. http://dx.doi.org/10.1115/ipack2019-6408.
Повний текст джерелаBrandao, Mauricio, Fabio Pires, Ingrid Poloponsky, Fabio Santos, and Diogo Lopes. "Flexible Pipes Subjected to SCC CO2: Review and Means to Increase Reliability on Service Life Applied to Brazilian Pre-Salt Fields." In Offshore Technology Conference. OTC, 2021. http://dx.doi.org/10.4043/31135-ms.
Повний текст джерелаChiriac, Victor Adrian, and Tien-Yu Tom Lee. "Thermal Design Analysis of Free Space Optical Interconnect (FSOI) Package Module." In ASME 2001 International Mechanical Engineering Congress and Exposition. American Society of Mechanical Engineers, 2001. http://dx.doi.org/10.1115/imece2001/htd-24389.
Повний текст джерелаЗвіти організацій з теми "Reliability of metallic interconnects"
Anil V. Virkar. Electrically Conductive, Corrosion-Resistant Coatings Through Defect Chemistry for Metallic Interconnects. Office of Scientific and Technical Information (OSTI), December 2006. http://dx.doi.org/10.2172/920189.
Повний текст джерелаVladimir Gorokhovsky. Oxidation Resistant, Cr Retaining, Electrically Conductive Coatings on Metallic Alloys for SOFC Interconnects. Office of Scientific and Technical Information (OSTI), March 2008. http://dx.doi.org/10.2172/947016.
Повний текст джерелаKang, Seung Hyuk. Effects of microstructural control on the failure kinetics and the reliability improvement of Al and Al-alloy interconnects. Office of Scientific and Technical Information (OSTI), December 1996. http://dx.doi.org/10.2172/469118.
Повний текст джерелаMichael, Joseph Richard, Richard P. Grant, Mark Andrew Rodriguez, Jamin Pillars, Donald Francis Susan, Bonnie Beth McKenzie, and William Graham Yelton. Understanding and predicting metallic whisker growth and its effects on reliability : LDRD final report. Office of Scientific and Technical Information (OSTI), January 2012. http://dx.doi.org/10.2172/1038184.
Повний текст джерелаRitchie, Robert O., and Mukul Kumar. A Study on the Role of Grain-Boundary Engineering in Promoting High-Cycle Fatigue Resistance and Improving Reliability in Metallic Alloys for Propulsion Systems. Fort Belvoir, VA: Defense Technical Information Center, April 2005. http://dx.doi.org/10.21236/ada456825.
Повний текст джерела