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Статті в журналах з теми "Reliability characterization"
Amirabdollahian, Mahsa, and Bithin Datta. "Reliability Evaluation of Groundwater Contamination Source Characterization under Uncertain Flow Field." International Journal of Environmental Science and Development 6, no. 7 (2015): 512–18. http://dx.doi.org/10.7763/ijesd.2015.v6.647.
Повний текст джерелаTsuchiya, Toshiyuki. "Reliability Characterization of MEMS Materials." IEEJ Transactions on Sensors and Micromachines 125, no. 7 (2005): 289–93. http://dx.doi.org/10.1541/ieejsmas.125.289.
Повний текст джерелаSong, William, Saibal Mukhopadhyay, and Sudhakar Yalamanchili. "Architectural Reliability: Lifetime Reliability Characterization and Management ofMany-Core Processors." IEEE Computer Architecture Letters 14, no. 2 (July 1, 2015): 103–6. http://dx.doi.org/10.1109/lca.2014.2340873.
Повний текст джерелаYang, Q. J., H. L. J. Pang, Z. P. Wang, G. H. Lim, F. F. Yap, and R. M. Lin. "Vibration reliability characterization of PBGA assemblies." Microelectronics Reliability 40, no. 7 (July 2000): 1097–107. http://dx.doi.org/10.1016/s0026-2714(00)00036-6.
Повний текст джерелаEkwueme, Chukwuma G., and Gary C. Hart. "Structural reliability characterization of precast concrete." Structural Design of Tall Buildings 3, no. 1 (March 1994): 13–35. http://dx.doi.org/10.1002/tal.4320030103.
Повний текст джерелаLee, J. C., Chen Ih-Chin, and Hu Chenming. "Modeling and characterization of gate oxide reliability." IEEE Transactions on Electron Devices 35, no. 12 (1988): 2268–78. http://dx.doi.org/10.1109/16.8802.
Повний текст джерелаCheng, Bowen, Dirk De Bruyker, Chris Chua, Kunal Sahasrabuddhe, Ivan Shubin, John E. Cunningham, Ying Luo, Karl F. Bohringer, Ashok V. Krishnamoorthy, and Eugene M. Chow. "Microspring Characterization and Flip-Chip Assembly Reliability." IEEE Transactions on Components, Packaging and Manufacturing Technology 3, no. 2 (February 2013): 187–96. http://dx.doi.org/10.1109/tcpmt.2012.2213250.
Повний текст джерелаClaeys, C., E. Simoen, J. M. Rafi, Marcelo A. Pavanello, and Joao A. Martino. "Physical Characterization and Reliability Aspects of MuGFETs." ECS Transactions 9, no. 1 (December 19, 2019): 281–94. http://dx.doi.org/10.1149/1.2766899.
Повний текст джерелаSheikh, A. "A reliability model for fatigue life characterization." International Journal of Fatigue 17, no. 2 (February 1995): 121–28. http://dx.doi.org/10.1016/0142-1123(95)95891-j.
Повний текст джерелаShaddock, David, and Liang Yin. "Reliability of High Temperature Laminates." Additional Conferences (Device Packaging, HiTEC, HiTEN, and CICMT) 2015, HiTEN (January 1, 2015): 000100–000110. http://dx.doi.org/10.4071/hiten-session3b-paper3b_1.
Повний текст джерелаДисертації з теми "Reliability characterization"
Nam, David. "Characterization, Reliability and Packaging for 300 °C MOSFET." Thesis, Virginia Tech, 2020. http://hdl.handle.net/10919/104896.
Повний текст джерелаM.S.
Electrical devices that are rated for high temperature applications demand a use of a material that is stable and reliable at the elevated temperatures. Silicon carbide (SiC) is such a material. Devices made from SiC are able to switch faster, have a superior efficiency, and are capable of operating at extreme temperatures much better than the currently widely used silicon (Si) devices. There are limitations on SiC certain structures of SiC devices, such as the metal oxide semiconductor field effect transistor (MOSFET), have inherent reliability issues related to the fabrication of the device. These reliability issues can get worse over higher temperature ranges. Therefore, studies must be made to determine the feasibility of SiC MOSFETs in high temperature applications. To do so, industry standard tests are conducted on newer generation SiC MOSFETs to ascertain their use for said conditions.
Ali, Richard A. "Reliability and characterization of high voltage power capacitors." Thesis, Monterey, California: Naval Postgraduate School, 2014. http://hdl.handle.net/10945/41346.
Повний текст джерелаAlternative energy products are an increasingly common sight on military bases in the United States. Energy product reliability affects the sustainability and cost-effectiveness of these systems, which must be tested by outside entities to ensure quality. The purpose of this thesis is to perform component level reliability testing on a high voltage power capacitor used in an electrical vehicle solar charging system. A component level characterization was performed to better understand the physical attributes of these capacitors. This investigation identified the expected component lifetime and conditions in which this component will become less reliable. Results are compared to those published by the manufacturer.
Tallarico, Andrea Natale <1988>. "Characterization and Modeling of Semiconductor Power Devices Reliability." Doctoral thesis, Alma Mater Studiorum - Università di Bologna, 2017. http://amsdottorato.unibo.it/7990/1/Tallarico_PhD_Thesis.pdf.
Повний текст джерелаXiao, Di. "On Modern IGBT Modules: Characterization, Reliability and Failure Mechanisms." Thesis, Norwegian University of Science and Technology, Department of Electrical Power Engineering, 2010. http://urn.kb.se/resolve?urn=urn:nbn:no:ntnu:diva-10932.
Повний текст джерелаThe increased demand of offshore power conversion systems is driven by newly initiated offshore projects for wind farms and oil production. Because of long distances to shore and inaccessibility of the equipment long repair times must be expected. At the same time the offshore environment is extremely harsh. Thus, high reliability is required for the converters and it is important to have good knowledge of the switching devices. This thesis investigates switching characteristics and losses of commercially available IGBT modules to be used for this application. It focuses on switching time and switching energy losses depending on gate resistance, current and voltage levels, operation temperatures, and show differences between several devices of the same type. Some test show how device characteristics and losses when the device has been exposed to stress over a certain period.
Zheng, Hanguang. "Die-Attachment on Copper by Nanosilver Sintering: Processing, Characterization and Reliability." Diss., Virginia Tech, 2015. http://hdl.handle.net/10919/73312.
Повний текст джерелаPh. D.
Luo, Wen. "Reliability characterization and prediction of high k dielectric thin film." Texas A&M University, 2004. http://hdl.handle.net/1969.1/3225.
Повний текст джерелаZAMBELLI, Cristian. "ELECTRICAL CHARACTERIZATION, PHYSICS, MODELING AND RELIABILITY OF INNOVATIVE NON-VOLATILE MEMORIES." Doctoral thesis, Università degli studi di Ferrara, 2012. http://hdl.handle.net/11392/2389431.
Повний текст джерелаRieske, Ralf. "Characterization of attenuation and reliability of PCB integrated optical waveguides." Templin Detert, 2006. http://deposit.d-nb.de/cgi-bin/dokserv?id=3017300&prov=M&dok_var=1&dok_ext=htm.
Повний текст джерелаLe, Huy X. P. "Characterization of hot-carrier reliability in analog sub-circuit design." Thesis, Massachusetts Institute of Technology, 1996. http://hdl.handle.net/1721.1/41379.
Повний текст джерелаIncludes bibliographical references (leaves 52-54).
by Huy X.P. Le.
M.Eng.
Engelbert, Carl Robert. "Statistical characterization of graphite fiber for prediction of composite structure reliability." Thesis, Monterey, California : Naval Postgraduate School, 1990. http://handle.dtic.mil/100.2/ADA238020.
Повний текст джерелаThesis Advisor(s): Wu, Edward M. "June 1990." Description based on signature page as viewed on October 21, 2009. DTIC Identifier(s): Graphite fiber strength testing, graphite fiber statistical evaluation. Author(s) subject terms: Graphite fiber strength testing, graphite fiber statistical evaluation, composite reliability predictions. Includes bibliographical references (p. 78-79). Also available in print.
Книги з теми "Reliability characterization"
McCauley, James W., and Volker Weiss, eds. Materials Characterization for Systems Performance and Reliability. Boston, MA: Springer US, 1986. http://dx.doi.org/10.1007/978-1-4613-2119-4.
Повний текст джерелаMaterial Characterization for Systems Performance and Reliability (Conference) (1984 Lake Luzerne, N.Y.). Materials characterization for systems performance and reliability. New York: Plenum, 1986.
Знайти повний текст джерелаSagamore Army Materials Research Conference (31st 1984 Lake Luzerne, N.Y.). Materials characterization for systems performance and reliability. New York: Plenum Press, 1986.
Знайти повний текст джерелаMcCauley, James W. Materials Characterization for Systems Performance and Reliability. Boston, MA: Springer US, 1986.
Знайти повний текст джерелаRajeshuni, Ramesham, Society of Photo-optical Instrumentation Engineers., and Semiconductor Equipment and Materials International., eds. Reliability, testing, and characterization of MEMS/MOEMS: 22-24 October 2001, San Francisco, USA. Bellingham, Wash: SPIE, 2001.
Знайти повний текст джерелаD, Todd M., U.S. Nuclear Regulatory Commission. Office of Nuclear Regulatory Research. Division of Engineering., and Oak Ridge National Laboratory, eds. A characterization of check valve degradation and failure experience in the nuclear power industry. Washington, DC: Division of Engineering, Office of Nuclear Regulatory Research, U.S. Nuclear Regulatory Commission, 1993.
Знайти повний текст джерелаL, Veteran Janice, ed. Silicon materials--processing, characterization and reliability: Symposium held April 1-5, 2002, San Francisco, California, U.S.A. Warrendale, PA: Materials Research Society, 2002.
Знайти повний текст джерела1952-, Tanner Danelle Mary, Ramesham Rajeshuni, and Society of Photo-optical Instrumentation Engineers., eds. Reliability, testing, and characterization of MEMS/MOEMS III: 26-28 January, 2004, San Jose, California, USA. Bellingham, Wash: SPIE, 2004.
Знайти повний текст джерелаHartzell, Allyson L. Reliability, packaging, testing, and characterization of MEMS/MOEMS VII: 21-22 January 2008, San Jose, California, USA. Bellingham, Wash: SPIE, 2008.
Знайти повний текст джерела1952-, Tanner Danelle Mary, Ramesham Rajeshuni, Society of Photo-optical Instrumentation Engineers., Semiconductor Equipment and Materials International., Solid State Technology (Organization), and Sandia National Laboratories, eds. Reliability, packaging, testing, and characterization of MEMS/MOEMS IV: 24-25 January 2005, San Jose, California, USA. Bellingham, Wash: SPIE, 2005.
Знайти повний текст джерелаЧастини книг з теми "Reliability characterization"
Varde, Prabhakar V., and Michael G. Pecht. "Risk Characterization." In Springer Series in Reliability Engineering, 15–29. Singapore: Springer Singapore, 2018. http://dx.doi.org/10.1007/978-981-13-0090-5_2.
Повний текст джерелаKlebanov, Lev, and Gabor Szekely. "Characterization of Distributions in Reliability." In Recent Advances in Reliability Theory, 105–15. Boston, MA: Birkhäuser Boston, 2000. http://dx.doi.org/10.1007/978-1-4612-1384-0_7.
Повний текст джерелаGreen, Robert E. "Nondestructive Materials Characterization." In Materials Characterization for Systems Performance and Reliability, 31–58. Boston, MA: Springer US, 1986. http://dx.doi.org/10.1007/978-1-4613-2119-4_3.
Повний текст джерелаSoares, J. C. "Nuclear Methods in the Characterization of Semiconductor Reliability." In Semiconductor Device Reliability, 291–300. Dordrecht: Springer Netherlands, 1990. http://dx.doi.org/10.1007/978-94-009-2482-6_15.
Повний текст джерелаRomero, Paulo, and Martins Maciel. "Workload Characterization." In Performance, Reliability, and Availability Evaluation of Computational Systems, Volume 2, 445–526. Boca Raton: Chapman and Hall/CRC, 2023. http://dx.doi.org/10.1201/9781003306030-12.
Повний текст джерелаLau, John H., and Ning-Cheng Lee. "Solder Joint Characterization." In Assembly and Reliability of Lead-Free Solder Joints, 299–354. Singapore: Springer Singapore, 2020. http://dx.doi.org/10.1007/978-981-15-3920-6_5.
Повний текст джерелаSato, Takashi, and Hiromitsu Awano. "On-Chip Characterization of Statistical Device Degradation." In Circuit Design for Reliability, 69–92. New York, NY: Springer New York, 2014. http://dx.doi.org/10.1007/978-1-4614-4078-9_5.
Повний текст джерелаWachtman, John B. "Materials Characterization at a University." In Materials Characterization for Systems Performance and Reliability, 475–78. Boston, MA: Springer US, 1986. http://dx.doi.org/10.1007/978-1-4613-2119-4_26.
Повний текст джерелаSmyth, D. M. "Compositional Characterization Of Dielectric Oxides." In Materials Characterization for Systems Performance and Reliability, 59–68. Boston, MA: Springer US, 1986. http://dx.doi.org/10.1007/978-1-4613-2119-4_4.
Повний текст джерелаHagnauer, Gary L. "Polymers and Polymer Precursor Characterization." In Materials Characterization for Systems Performance and Reliability, 189–243. Boston, MA: Springer US, 1986. http://dx.doi.org/10.1007/978-1-4613-2119-4_9.
Повний текст джерелаТези доповідей конференцій з теми "Reliability characterization"
Suehle, J. S. "Reliability characterization of ultra-thin film dielectrics." In CHARACTERIZATION AND METROLOGY FOR ULSI TECHNOLOGY. ASCE, 1998. http://dx.doi.org/10.1063/1.56786.
Повний текст джерелаWeide-Zaage, Kirsten, Yuqi Tan, and Verena Hein. "Thick AlCu-metal reliability characterization." In 2018 19th International Conference on Thermal, Mechanical and Multi-Physics Simulation and Experiments in Microelectronics and Microsystems (EuroSimE). IEEE, 2018. http://dx.doi.org/10.1109/eurosime.2018.8369904.
Повний текст джерелаHartzell, Allyson L., and David J. Woodilla. "MEMS reliability, characterization, and test." In Micromachining and Microfabrication, edited by Rajeshuni Ramesham. SPIE, 2001. http://dx.doi.org/10.1117/12.442987.
Повний текст джерела"Poster session: Reliability and characterization." In 2014 IEEE 29th International Conference on Microelectronics (MIEL). IEEE, 2014. http://dx.doi.org/10.1109/miel.2014.6842153.
Повний текст джерелаWategaonkar, Dhanashri N., and Vivek S. Deshpande. "Characterization of reliability in WSN." In 2012 World Congress on Information and Communication Technologies (WICT). IEEE, 2012. http://dx.doi.org/10.1109/wict.2012.6409215.
Повний текст джерелаReczek, W., F. Bonner, and B. Murphy. "Reliability of latchup characterization procedures." In International Conference on Microelectronic Test Structures. IEEE, 1990. http://dx.doi.org/10.1109/icmts.1990.67879.
Повний текст джерелаGossner, Harald, and Alessandro Paccagnella. "Session 14: Characterization, reliability, and yield - ESD/memory reliability." In 2008 IEEE International Electron Devices Meeting (IEDM). IEEE, 2008. http://dx.doi.org/10.1109/iedm.2008.4796687.
Повний текст джерелаDemertzi, Melina, Bardia Zandian, Ricardo Rojas, and Murali Annavaram. "Benchmarking ISA reliability to intermittent errors." In 2012 IEEE International Symposium on Workload Characterization (IISWC). IEEE, 2012. http://dx.doi.org/10.1109/iiswc.2012.6402906.
Повний текст джерелаKeller, R. R., M. C. Strus, A. N. Chiaramonti, Y. L. Kim, Y. J. Jung, D. T. Read, David G. Seiler, et al. "Reliability Testing of Advanced Interconnect Materials." In FRONTIERS OF CHARACTERIZATION AND METROLOGY FOR NANOELECTRONICS: 2011. AIP, 2011. http://dx.doi.org/10.1063/1.3657900.
Повний текст джерелаLiu, Ji, and Huiyang Zhou. "Reliability Modeling of NISQ- Era Quantum Computers." In 2020 IEEE International Symposium on Workload Characterization (IISWC). IEEE, 2020. http://dx.doi.org/10.1109/iiswc50251.2020.00018.
Повний текст джерелаЗвіти організацій з теми "Reliability characterization"
Spratt, Randolph W. STOVL Fighter Propulsion Reliability, Maintainability and Supportability Characterization. Fort Belvoir, VA: Defense Technical Information Center, March 1990. http://dx.doi.org/10.21236/ada224221.
Повний текст джерелаYang, Benjamin Bing-Yeh, Jose Luis Cruz-Campa, Gad S. Haase, Paiboon Tangyunyong, Edward Isaac Colr, Murat Okandan, and Gregory N. Nielson. Defect localization, characterization and reliability assessment in emerging photovoltaic devices. Office of Scientific and Technical Information (OSTI), April 2014. http://dx.doi.org/10.2172/1177042.
Повний текст джерелаKramer, K. Status Quo of PVT Characterization. Edited by Korbinian Kramer,. IEA SHC Task 60, September 2020. http://dx.doi.org/10.18777/ieashc-task60-2020-0004.
Повний текст джерелаRobert W Youngblood. Treatment of Passive Component Reliability in Risk-Informed Safety Margin Characterization FY 2010 Report. Office of Scientific and Technical Information (OSTI), September 2010. http://dx.doi.org/10.2172/1004257.
Повний текст джерелаFrench, Roger, Bryan Huey, Alexandra Longacre, Michael Martin, Thomas Moran, Oleg Kolosov, Eric Schneller, et al. Reliability and Power Degradation Rates of PERC Modules Using Differentiated Packaging Strategies and Characterization Tools. Office of Scientific and Technical Information (OSTI), June 2021. http://dx.doi.org/10.2172/1804123.
Повний текст джерелаJohnson, D. R., R. W. McClung, M. A. Janney, and W. M. Hanusiak. Needs assessment for nondestructive testing and materials characterization for improved reliability in structural ceramics for heat engines. Office of Scientific and Technical Information (OSTI), August 1987. http://dx.doi.org/10.2172/6185356.
Повний текст джерелаBoring, Ronald, Diego Mandelli, Martin Rasmussen, Sarah Herberger, Thomas Ulrich, Katrina Groth, and Curtis Smith. Integration of Human Reliability Analysis Models into the Simulation-Based Framework for the Risk-Informed Safety Margin Characterization Toolkit. Office of Scientific and Technical Information (OSTI), June 2016. http://dx.doi.org/10.2172/1371517.
Повний текст джерелаBoesch, F. T., A. Satyanarayana, and C. L. Suffel. Some Alternate Characterizations of Reliability Domination. Fort Belvoir, VA: Defense Technical Information Center, January 1990. http://dx.doi.org/10.21236/ada264594.
Повний текст джерелаBaral, Aniruddha, Jeffery Roesler, and Junryu Fu. Early-age Properties of High-volume Fly Ash Concrete Mixes for Pavement: Volume 2. Illinois Center for Transportation, September 2021. http://dx.doi.org/10.36501/0197-9191/21-031.
Повний текст джерелаWarrick, Arthur, Uri Shani, Dani Or, and Muluneh Yitayew. In situ Evaluation of Unsaturated Hydraulic Properties Using Subsurface Points. United States Department of Agriculture, October 1999. http://dx.doi.org/10.32747/1999.7570566.bard.
Повний текст джерела