Готові списки джерел за темами / Power semiconductor diodes

Зміст

  1. Статті в журналах
  2. Дисертації
  3. Книги
  4. Частини книг
  5. Тези доповідей конференцій

Добірка наукової літератури з теми "Power semiconductor diodes"

Автор: Grafiati
Опубліковано: 7 вересня 2024

Оформте джерело за APA, MLA, Chicago, Harvard та іншими стилями

Оберіть тип джерела:

Ознайомтеся зі списками актуальних статей, книг, дисертацій, тез та інших наукових джерел на тему "Power semiconductor diodes".

Біля кожної праці в переліку літератури доступна кнопка «Додати до бібліографії». Скористайтеся нею – і ми автоматично оформимо бібліографічне посилання на обрану працю в потрібному вам стилі цитування: APA, MLA, «Гарвард», «Чикаго», «Ванкувер» тощо.

Також ви можете завантажити повний текст наукової публікації у форматі «.pdf» та прочитати онлайн анотацію до роботи, якщо відповідні параметри наявні в метаданих.

Статті в журналах з теми "Power semiconductor diodes"

1

Parker-Allotey, Nii Adotei, Dean P. Hamilton, Olayiwola Alatise, Michael R. Jennings, Philip A. Mawby, Rob Nash, and Rob Magill. "Improved Energy Efficiency Using an IGBT/SiC-Schottky Diode Pair." Materials Science Forum 717-720 (May 2012): 1147–50. http://dx.doi.org/10.4028/www.scientific.net/msf.717-720.1147.

Повний текст джерела
Анотація:
This paper will demonstrate how the newer Silicon Carbide material semiconductor power devices can contribute to carbon emissions reduction and the speed of adoption of electric vehicles, including hybrids, by enabling significant increases in the driving range. Two IGBT inverter leg modules of identical power rating have been manufactured and tested. One module has silicon-carbide (SiC) Schottky diodes as anti-parallel diodes and the other silicon PiN diodes. The power modules have been tested and demonstrate the superior electrothermal performance of the SiC Schottky diode over the Si PiN diode leading to a reduction in the power module switching losses.
Стилі APA, Harvard, Vancouver, ISO та ін.
2

Bumai, Yurii, Aleh Vaskou, and Valerii Kononenko. "Measurement and Analysis of Thermal Parameters and Efficiency of Laser Heterostructures and Light-Emitting Diodes." Metrology and Measurement Systems 17, no. 1 (January 1, 2010): 39–45. http://dx.doi.org/10.2478/v10178-010-0004-x.

Повний текст джерела
Анотація:
Measurement and Analysis of Thermal Parameters and Efficiency of Laser Heterostructures and Light-Emitting DiodesA thermal resistance characterization of semiconductor quantum-well heterolasers in the AlGaInAs-AlGaAs system (λst≈ 0.8 μm), GaSb-based laser diodes (λst≈ 2 μm), and power GaN light-emitting diodes (visible spectral region) was performed. The characterization consists in investigations of transient electrical processes in the diode sources under heating by direct current. The time dependence of the heating temperature of the active region of a source ΔT(t), calculated from direct bias change, is analyzed using a thermalRTCTequivalent circuit (the Foster and Cauer models), whereRTis the thermal resistance andCTis the heat capacity of the source elements and external heat sink. By the developed method, thermal resistances of internal elements of the heterolasers and light-emitting diodes are determined. The dominant contribution of a die attach layer to the internal thermal resistance of both heterolaser sources and light-emitting diodes is observed. Based on the performed thermal characterization, the dependence of the optical power efficiency on current for the laser diodes is determined.
Стилі APA, Harvard, Vancouver, ISO та ін.
3

Liu, Hai Rui, and Jun Sheng Yu. "Characterization of Metal-Semiconductor Schottky Diodes and Application on THz Detection." Advanced Materials Research 683 (April 2013): 729–32. http://dx.doi.org/10.4028/www.scientific.net/amr.683.729.

Повний текст джерела
Анотація:
This paper presents a kind of air-bridged GaAs Schottky diodes which offer ultra low parasitic capacitance and series resistance in millimeter and THz wavelength. The Schottky barrier diodes have several advantages when used as millimeter wave and terahertz video, or power detectors. These include their fast time response, room temperature operation, simple structure and low cost. This paper describes the characterization of the metal-semiconductor Schottky diodes including principle, diode structure, non-linear voltage-current characteristic and signal-rectifying performance. For application, a quasi-optical THz detector was made by using the proposed Schottky diodes. It utilized a hyper hemispherical silicon lens to coupleand THz radiation to the diodes by integrating on a broadband planar bow-tie antenna. The measurement results of the Schottky diode based detector show a good room temperature performance.
Стилі APA, Harvard, Vancouver, ISO та ін.
4

Li, Zai Jin, Yi Qu, Te Li, Peng Lu, Bao Xue Bo, Guo Jun Liu, and Xiao Hui Ma. "The Characteristics of Facet Coatings on Diode Lasers." Advanced Materials Research 1089 (January 2015): 202–5. http://dx.doi.org/10.4028/www.scientific.net/amr.1089.202.

Повний текст джерела
Анотація:
The effect of the output power with different facet passivation methods on 980 nm graded index waveguide structure InGaAs/AlGaAs laser diodes was studied. The output power of the 980 nm laser diodes with Si passivation, and ZnSe passivation at the front and the back facet were compared. The test results show that output power of the ZnSe passivation method is 11% higher than Si passivation method. The laser diode with the Si passivation film is failure when current is 5.1 A, the laser diode with the ZnSe passivation film is not failure until current is 5.6 A And we analyzed the failure reasons for each method. In conclusion, the method of coated ZnSe passivation on the laser diode facet can effectively increase the output power of semiconductor lasers.
Стилі APA, Harvard, Vancouver, ISO та ін.
5

Al-Rawashdeh, Ayman Yasseen, Mikhail Pavlovich Dunayev, Khalaf Y. Alzyoud, and Sarfaroz U. Dovudov. "Calculation of power losses in a frequency inverter." International Journal of Power Electronics and Drive Systems (IJPEDS) 15, no. 3 (September 1, 2024): 1331. http://dx.doi.org/10.11591/ijpeds.v15.i3.pp1331-1338.

Повний текст джерела
Анотація:
This study's main goal is to make a new simulation model of the power losses calculation block for frequency converter power switches that can correctly figure out the transistors and diodes' static and dynamic power losses in a 1.5 kW SIEMENS SINAMICS G110 semiconductor converter (SSG110SC). We use simulation modeling tools in the MATLAB/Simulink environment to look at the semiconductor circuits of a rectifier and an autonomous pulse-width modulation voltage inverter. The study presents analytical expressions describing static and dynamic power losses in power semiconductor diodes and transistors. We used polynomials to get close to the power characteristics of insulated-gate bipolar transistor or IGBTs and then used mathematical expressions to show how they depend on Erec (Ic), Vse (Ic), Vf (If), Eon (Ic), and Eoff (Ic). By utilizing the acquired expressions, a MATLAB/Simulink block was constructed to calculate static and dynamic power losses. as well as power loss dependences on switching frequency and load current, were computed utilizing the developable block system. By comparing the simulation outcomes of the present study to the data provided by the manufacturer, the results were validated. Specific diode and transistor characteristics can be accounted for by the method developed in the present study.
Стилі APA, Harvard, Vancouver, ISO та ін.
6

Shurenkov, V. V. "On the Physical Mechanism of the Interaction of the Microwave Radiation with the Semiconductor Diodes." Advanced Materials Research 1016 (August 2014): 521–25. http://dx.doi.org/10.4028/www.scientific.net/amr.1016.521.

Повний текст джерела
Анотація:
The electronic systems of aerospace techniques include power microwave devices and analog and digital semiconductor devices. The radiation of power microwave devices may effect on the semiconductor devices. So it’s necessary to know the electromagnetic effects of this radiation on the semiconductor devices. The electromagetic effects of the microwave radiation exposure on the semiconductor diodes, the main part of any semiconductor devices, are considered. The changes of current – voltage characteristics of the diodes are explained, outgoing from the model of the recombination of carriers through deep energy level recombination center in forbidden gap induced by microwave radiation field.
Стилі APA, Harvard, Vancouver, ISO та ін.
7

Su, Xinran. "The Retrospect and Prospect of GaN-Based Schottky Diode." Journal of Physics: Conference Series 2381, no. 1 (December 1, 2022): 012119. http://dx.doi.org/10.1088/1742-6596/2381/1/012119.

Повний текст джерела
Анотація:
Abstract In the 21st century, with the continuous progress of human society and the continuous upgrading of the integrated circuit industry in recent years, the rapid development of modern science and technology makes us have higher and higher requirements for semiconductor products in our life and production. Compared with the first generation and the second generation of semiconductors, the third generation of semiconductors represented by GaN relies on its high electron mobility, bandgap width, electron saturation speed, high-temperature resistance, radiation resistance, and other suitable material properties. It has more and more extensive application prospects in the research field of microwave high-power devices. Today, the introduction of semiconductors in electronics improves the energy efficiency of equipments and modules. Gallium nitride (GaN) - based schottky diodes have broad application prospects in the next generation of schottky diodes due to their excellent performance. However, because of some technical concerns, these materials have not been fully developed. This work briefly summarized some science and technology related to GaN-Based Schottky Diode. A special focus will be put on the advantages and disadvantages of GaN-Based Schottky Diode, discussing some modern improved designs. Finally, possible breakthroughs of GaN-Based Schottky Diode will be summarized.
Стилі APA, Harvard, Vancouver, ISO та ін.
8

Zemliak, Alexander, and Eugene Machusky. "Analysis of Electrical and Thermal Models for Pulsed IMPATT Diode Simulation." WSEAS TRANSACTIONS ON CIRCUITS AND SYSTEMS 20 (July 12, 2021): 156–65. http://dx.doi.org/10.37394/23201.2021.20.19.

Повний текст джерела
Анотація:
Some nonlinear models are presented for modeling and analyzing IMPATT high-power pulse diodes. These models are suitable for analyzing different operating modes of the oscillator. The first model is a precise one, which describes all important electrical phenomena on the basis of the continuity equations and Poisson´s equation, and it is correct until 300 GHz. The second approximate mathematical model suitable for the analysis of IMPATT diode stationary operation oscillator and for optimization of internal structure of the diode. The temperature distribution in the semiconductor structure is obtained using the special thermal model of the IMPATT diode, which is based on the numerical solution of the non-linear thermal conductivity equation. The described models can be applied for the analysis, optimization and practical design of pulsedmode millimetric IMPATT diodes. It can also be used to evaluate the thermal behavior of diodes, to correctly select the shape and amplitude of a supply pulse, and to design various types of high-power pulsed millimeter IMPATT diodes with a complex doping profile with improved characteristics.
Стилі APA, Harvard, Vancouver, ISO та ін.
9

Ostapchuk, Mikhail, Dmitry Shishov, Daniil Shevtsov, and Sergey Zanegin. "Research of Static and Dynamic Properties of Power Semiconductor Diodes at Low and Cryogenic Temperatures." Inventions 7, no. 4 (October 18, 2022): 96. http://dx.doi.org/10.3390/inventions7040096.

Повний текст джерела
Анотація:
Systems with high-temperature superconductors (HTSC) impose new requirements on power conversions, since the main part of the losses in such systems is induced in the semiconductors of the converters. Within the framework of this study, the possibility of improving the static and dynamic characteristics of power semiconductor diodes using cryogenic cooling was confirmed; in some cases, a loss reduction of up to 30% was achieved.
Стилі APA, Harvard, Vancouver, ISO та ін.
10

Kolesnikov, Maksim, M. Kharchenko, V. Dorohov, and Konstantin Zolnikov. "Application of semiconductor electronics products in extreme conditions." Modeling of systems and processes 16, no. 1 (March 29, 2023): 46–56. http://dx.doi.org/10.12737/2219-0767-2023-16-1-46-56.

Повний текст джерела
Анотація:
A study of the thermal properties of materials used in semiconductor electronics has been carried out. The dependence of the thermal resistance of GaAs diodes on the temperature increase of the product body is determined. They are determined taking into account the design solutions of the housing design of the REA, which can protect components from extreme, difficult conditions, but they increase the weight and complexity of the system. Materials such as SiC, GaAs, GaN, diamond that can withstand extreme conditions may have advantages that go far beyond their electronic characteristics. An example of the application of GaAs-based diode modules of p-i-n diodes developed by JSC "VZPP-S" is given - a three-phase bridge rectifier made according to the Larionov scheme for an electric generator with a power of up to 2750 watts. A methodology for conducting reliability tests has been developed. Short-term tests for the reliability of diode modules at extreme housing temperatures were carried out. The results of the calculation of the thermal resistance of the junction-housing are presented. To simplify the calculation of the thermal resistance of the junction-housing of the developed module, we will make the following assumptions: the materials used in the design of the module diodes have isotropic thermal conductivity; heat exchange in the internal parts of the structure is carried out only by thermal conductivity; there are no contact resistances between the layers; the power dissipated by the terminals of the diode crystals is negligible compared with the power discharged through the lower base into the heat sink; the side surfaces of the thermal model are insulated; each layer of the same material is homogeneous and has a thermal conductivity coefficient determined by the average temperature of the layer; the influence of the thermal effect of neighboring crystals of the module is not taken into account. The algorithm of stationary thermal regime (method of equivalents) of Appendix N OST 11 0944-96 is chosen as the basis of calculation.
Стилі APA, Harvard, Vancouver, ISO та ін.
Більше джерел

Дисертації з теми "Power semiconductor diodes"

1

Ma, Cliff Liewei. "Modeling of bipolar power semiconductor devices /." Thesis, Connect to this title online; UW restricted, 1994. http://hdl.handle.net/1773/6046.

Повний текст джерела
Стилі APA, Harvard, Vancouver, ISO та ін.
2

Lock, Daren. "Investigations into the high power limitations of semiconductor laser diodes." Thesis, University of Surrey, 2005. http://epubs.surrey.ac.uk/711/.

Повний текст джерела
Стилі APA, Harvard, Vancouver, ISO та ін.
3

You, Budong. "Investigation of MOS-Gated Thyristors and Power Diodes." Diss., Virginia Tech, 2000. http://hdl.handle.net/10919/26094.

Повний текст джерела
Анотація:
The MOS-gated thyristors (MGT) refer to the class of power devices that combine the ease of a MOS gate control with the superior current carrying capability of a thyristor structure for high-power applications. The MOS-controlled thyristor (MCT) is a typical MGT device. A comprehensive investigation of the reverse-biased safe operating area (RBSOA) characteristics of the MCT has been undertaken. The electrical failure mechanisms of the MCT are discussed, and the relationship between the dynamic avalanche limited RBSOA boundary of the MCT and the lower open-base transistor is identified. An analytical model based on the dynamic current gain concept is proposed to characterize the open-base transistor. For the first time, a RBSOA characteristic equation is developed for the MCT and a unified view of the RBSOA characteristics of the MCT is presented. The fundamental characteristics of the MCT are compared to those of the insulated gate bipolar transistor (IGBT) at two levels: unit-cell and multi-cell. The investigation of the unit-cell level focuses on the tradeoff between the on-state voltage drop, the turn-off loss, and the RBSOA characteristic. The investigation of the multi-cell level reveals the fundamental difference between the MCT and the IGBT in handling the non-uniform turn-off caused by the internal propagation gate delay of a large-area device. Lack of current saturation capability is identified as the main reason for the severe degradation of the turn-off capability of a large-area multi-cell MCT. The current saturation and controlled turn-on capabilities can be realized in the MGT devices with dual operation modes. For the first time, a dual operation mode MCT developed with superior current saturation capability is used to demonstrate how the dual operation device can be beneficial in the switching circuit application. The maximum controllable current density (Jmcc) is the most important characteristic of the dual operation mode MGT devices. A first-order analytic model is developed to characterize the Jmcc of the dual operation mode MGT structures compatible with the IGBT fabrication process. A new device structure with improved Jmcc characteristics is proposed and verified by both simulation and experimental results. The dissertation also carries out a comprehensive investigation of the development of power diodes. A new power diode, called the Trench Bipolar Junction Diode (TBJD), which has superior dynamic characteristics over the conventional P-i-N diode, is proposed. The TBJD controls the anode injection efficiency of the diode by the action of a reverse active transistor structure integrated into its anode junction. The reverse active transistor helps tailor an optimized on-state carrier profile to improve the diode switching characteristics. A novel self-aligned process is developed to fabricate the TBJD. Experimental characterization of the fabricated TBJD devices shows that the TBJD achieves superior dynamic characteristics without sacrificing the on-state voltage drop and the leakage current characteristics.
Ph. D.
Стилі APA, Harvard, Vancouver, ISO та ін.
4

Amuzuvi, Christian Kwaku. "Characterisation, emulation and by-emitter degradation analysis of high power semiconductor laser diodes." Thesis, University of Nottingham, 2010. http://eprints.nottingham.ac.uk/13102/.

Повний текст джерела
Анотація:
The characterisation, emulation and by-emitter degradation analysis of two types of high power semiconductor laser diodes are presented in this thesis as part of an European Union (EU) project. An attempt is made using an accurate laser simulator called Speclase to learn more about the degradation of high power semiconductor laser diodes. Speclase being a single emitter simulation tool was transformed to model a bar i.e. multiple emitters, which we have named Barlase, through an external control interface written in Labview. The concept of Barlase was based on the fact that a bar is a monolithic block of multiple emitters connected in parallel with each other with a common voltage connected across them. This tool is capable of performing simulation in different modes of operation (i.e. constant current or constant power). The tool is designed to examine and emulate the degradation processes at both the laser bar and individual emitter levels of operation. It is known that, emitter degradation is faster for emitters within a bar than for identical single emitters due to a combination of packaging-induced strain and current competition between emitters amongst others. This tool shows clear evidence of the benefits of using by-emitter degradation analysis for gaining detailed understanding of individual emitters operating in a bar and for determining bar degradation mechanisms. The tool complement to the by-emitter analysis, allowing the effects of certain factors that affect the degradation of laser bars to be investigated. Various intervention measures were taken to improve upon the results of the emulation such as modifying the trap density through local heating and the use of the global thermal solver. The modification of the trap density allowed the acceptance of a spatially variable local trap density distribution that gave a more realistic and accurate simulation of the degradation behaviour. The introduction of the global thermal solver allowed the modelling of thermal cross-talk communication between the emitters, which brings about the frown shaped current/power profiles for the unaged bars (though not as pronounced as in the experiment). An attempt was made to employ this tool in the emulation of experimentally observed degradation behaviour in a 975 nm, 16 emitter infrared tapered laser bar with each group of 4 mini-array emitters. The laser bar was first calibrated to achieve a reasonable agreement between the experimental P-I curves of unaged emitters assuming identical emitters with the simulated P-I curves. The simulated P-I curve was then used to perform simulations to emulate the degradation of the laser. The simulated output power profile did not correspond well with the experimental power profile, but a good agreement was realised between the combined output powers of the bar. Better correlation was observed between the experimental and the simulated temperature profiles. This was expected since the experimental temperature was set as input for the heatsink temperature profile. This agreement therefore must not be over-emphasised. The bar emulation model was enhanced by including a global thermal solver to model the thermal crosstalk between emitters. Emulations using this model showed a clearly defined frown shaped profile in the output current and power profiles but the change was minimal. As the emulation of laser bar degradation has not been attempted before, this work is still at a very early stage. Therefore, further work is needed to achieve better agreement in the output current/power profiles and to better the model.
Стилі APA, Harvard, Vancouver, ISO та ін.
5

Efthymiou, Loizos. "GaN-on-silicon HEMTs and Schottky diodes for high voltage applications." Thesis, University of Cambridge, 2017. https://www.repository.cam.ac.uk/handle/1810/274912.

Повний текст джерела
Анотація:
Gallium Nitride (GaN) is considered a very promising material for use in the field of power devices as its application in power systems would result in a significant increase in the power density, reduced power losses, and the potential to operate at high frequencies. The wide bandgap of the material allows a high critical electric field to be sustained which can lead to the design of devices with a shorter drift region, and therefore with lower on-state resistance, if compared to a silicon-based device with the same breakdown voltage. The use of an AlGaN/GaN heterostructure allows the formation of a two-dimensional electron gas (2DEG) at the heterointerface where carriers can reach very high mobility values. These properties can lead to the production of High Electron Mobility Transistors (HEMTs) and Schottky barrier diodes with superior performance, even when compared to devices based on state-of-the-art technologies such as Silicon Carbide or superjunctions. Furthermore, epitaxial growth of GaN layers on silicon wafers allows a significant reduction in the production cost and makes these devices competitive from a price perspective. This thesis will deal with a variety of topics concerning the characterization, design and optimization of AlGaN/GaN HEMTs and Schottky diodes with a 600 to 650V rating. Discussion will span several topics from device cross-section physics to circuit implementation and will be based on both experimental results and advanced modelling. More specifically, the thesis is concerned with the characterization of AlGaN/GaN Schottky diodes and extraction of their main parameters such as ideality factor, barrier height and series resistance. A thorough investigation of their reverse recovery performance and a comparison to competing technologies is also given. Several topics which concern the operation of AlGaN/GaN HEMTs are then discussed. The underlying physics of p-gate enhancement mode transistors are analysed followed by a discussion of the challenges associated with the implementation of these devices at a circuit level. Finally, a comparison of the performance of a specific area-saving layout (Bonding pad over active area) and a conventional design is given. The thesis aims to significantly enhance the understanding of the behaviour of these devices to enable better or new commercial designs to emerge.
Стилі APA, Harvard, Vancouver, ISO та ін.
6

Guo, Xuhan. "Generation of ultrashort optical pulses with high peak power by monolithic laser diodes." Thesis, University of Cambridge, 2014. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.648571.

Повний текст джерела
Стилі APA, Harvard, Vancouver, ISO та ін.
7

Tuladhar, Looja R. "Resonant power MOSFET drivers for LED lighting /." Connect to resource online, 2009. http://rave.ohiolink.edu/etdc/view?acc_num=ysu1264709029.

Повний текст джерела
Стилі APA, Harvard, Vancouver, ISO та ін.
8

Wang, Cai Johnson R. Wayne. "High temperature high power SiC devices packaging processes and materials development." Auburn, Ala., 2006. http://repo.lib.auburn.edu/2006%20Spring/doctoral/WANG_CAI_24.pdf.

Повний текст джерела
Стилі APA, Harvard, Vancouver, ISO та ін.
9

Lang, Lei. "Investigation of optical filtering techniques for improving the beam quality of high-power semiconductor laser diodes." Thesis, University of Nottingham, 2011. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.546489.

Повний текст джерела
Стилі APA, Harvard, Vancouver, ISO та ін.
10

Bull, Stephen. "Photo- and electroluminescence microscopy and spectroscopy investigations of high power and high brightness semiconductor laser diodes." Thesis, University of Nottingham, 2004. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.417522.

Повний текст джерела
Стилі APA, Harvard, Vancouver, ISO та ін.
Більше джерел

Книги з теми "Power semiconductor diodes"

1

Center, Goddard Space Flight, ed. Modulation characteristics of a high-power semiconductor master oscillator power amplifier (MOPA). Greenbelt, Md: National Aeronautics and Space Administration, Goddard Space Flight Center, 1992.

Знайти повний текст джерела
Стилі APA, Harvard, Vancouver, ISO та ін.
2

Center, Goddard Space Flight, ed. Modulation characteristics of a high-power semiconductor master oscillator power amplifier (MOPA). Greenbelt, Md: National Aeronautics and Space Administration, Goddard Space Flight Center, 1992.

Знайти повний текст джерела
Стилі APA, Harvard, Vancouver, ISO та ін.
3

S, Zediker Mark, and Society of Photo-optical Instrumentation Engineers., eds. High-power diode laser technology and applications III: 24-25 January, 2005, San Jose, California, USA. Bellingham, Wash: SPIE, 2005.

Знайти повний текст джерела
Стилі APA, Harvard, Vancouver, ISO та ін.
4

Zediker, Mark S. High-power diode laser technology and applications VI: 21-23 January 2008, San Jose, California, USA. Bellingham, Wash: SPIE, 2008.

Знайти повний текст джерела
Стилі APA, Harvard, Vancouver, ISO та ін.
5

J, Linden Kurt, Akkapeddi Prasad R, Society of Photo-optical Instrumentation Engineers., and United States. Advanced Research Projects Agency., eds. Laser diodes and applications II. Bellingham, WA: SPIE, 1996.

Знайти повний текст джерела
Стилі APA, Harvard, Vancouver, ISO та ін.
6

J, Linden Kurt, Akkapeddi Prasad R, and Society of Photo-optical Instrumentation Engineers., eds. Laser diodes and applications: 8-10 February 1995, San Jose, California. Bellingham, Wash., USA: SPIE, 1995.

Знайти повний текст джерела
Стилі APA, Harvard, Vancouver, ISO та ін.
7

Zediker, Mark S. High-power diode laser technology and applications VI: 21-23 January 2008, San Jose, California, USA. Bellingham, Wash: SPIE, 2008.

Знайти повний текст джерела
Стилі APA, Harvard, Vancouver, ISO та ін.
8

Zediker, Mark S. High-power diode laser technology and applications VIII: 25-26 January 2010, San Francisco, California, United States. Edited by SPIE (Society). Bellingham, Wash: SPIE, 2010.

Знайти повний текст джерела
Стилі APA, Harvard, Vancouver, ISO та ін.
9

Zediker, Mark S. High-power diode laser technology and applications VII: 26-27 January 2009, San Jose, California, United States. Edited by SPIE (Society). Bellingham, Wash: SPIE, 2009.

Знайти повний текст джерела
Стилі APA, Harvard, Vancouver, ISO та ін.
10

Zediker, Mark S. High-power diode laser technology and applications VII: 26-27 January 2009, San Jose, California, United States. Edited by SPIE (Society). Bellingham, Wash: SPIE, 2009.

Знайти повний текст джерела
Стилі APA, Harvard, Vancouver, ISO та ін.
Більше джерел

Частини книг з теми "Power semiconductor diodes"

1

Lutz, Josef, Heinrich Schlangenotto, Uwe Scheuermann, and Rik De Doncker. "pin Diodes." In Semiconductor Power Devices, 201–70. Cham: Springer International Publishing, 2018. http://dx.doi.org/10.1007/978-3-319-70917-8_5.

Повний текст джерела
Стилі APA, Harvard, Vancouver, ISO та ін.
2

Lutz, Josef, Heinrich Schlangenotto, Uwe Scheuermann, and Rik De Doncker. "Schottky Diodes." In Semiconductor Power Devices, 271–93. Cham: Springer International Publishing, 2018. http://dx.doi.org/10.1007/978-3-319-70917-8_6.

Повний текст джерела
Стилі APA, Harvard, Vancouver, ISO та ін.
3

Lutz, Josef, Heinrich Schlangenotto, Uwe Scheuermann, and Rik De Doncker. "pin-Diodes." In Semiconductor Power Devices, 159–224. Berlin, Heidelberg: Springer Berlin Heidelberg, 2010. http://dx.doi.org/10.1007/978-3-642-11125-9_5.

Повний текст джерела
Стилі APA, Harvard, Vancouver, ISO та ін.
4

Lutz, Josef, Heinrich Schlangenotto, Uwe Scheuermann, and Rik De Doncker. "Schottky Diodes." In Semiconductor Power Devices, 225–40. Berlin, Heidelberg: Springer Berlin Heidelberg, 2010. http://dx.doi.org/10.1007/978-3-642-11125-9_6.

Повний текст джерела
Стилі APA, Harvard, Vancouver, ISO та ін.
5

Hoft, Richard G. "Diodes and Power Transistors." In Semiconductor Power Electronics, 26–56. Dordrecht: Springer Netherlands, 1986. http://dx.doi.org/10.1007/978-94-011-7015-4_2.

Повний текст джерела
Стилі APA, Harvard, Vancouver, ISO та ін.
6

Sreejith, S., B. Sivasankari, S. Babu Devasenapati, A. Karthika, and Anitha Mathew. "Recent Developments in Schottky Diodes and Their Applications." In Emerging Low-Power Semiconductor Devices, 127–51. Boca Raton: CRC Press, 2022. http://dx.doi.org/10.1201/9781003240778-7.

Повний текст джерела
Стилі APA, Harvard, Vancouver, ISO та ін.
7

Gružinskis, V., E. Starikov, P. Shiktorov, L. Reggiani, M. Saraniti, and L. Varani. "Generation and Amplification of Microwave Power in Submicron n + nn + Diodes." In Simulation of Semiconductor Devices and Processes, 333–36. Vienna: Springer Vienna, 1993. http://dx.doi.org/10.1007/978-3-7091-6657-4_82.

Повний текст джерела
Стилі APA, Harvard, Vancouver, ISO та ін.
8

Chin, Aland K., and Rick K. Bertaska. "Catastrophic Optical Damage in High-Power, Broad-Area Laser Diodes." In Materials and Reliability Handbook for Semiconductor Optical and Electron Devices, 123–45. New York, NY: Springer New York, 2012. http://dx.doi.org/10.1007/978-1-4614-4337-7_5.

Повний текст джерела
Стилі APA, Harvard, Vancouver, ISO та ін.
9

Pati, S. P., and P. R. Tripathy. "Monitoring Parameters for Optimization of Power & Efficiency and Minimization of Noise in High Frequency IMPATT Diodes." In Physics of Semiconductor Devices, 163–67. Cham: Springer International Publishing, 2014. http://dx.doi.org/10.1007/978-3-319-03002-9_41.

Повний текст джерела
Стилі APA, Harvard, Vancouver, ISO та ін.
10

Ramshaw, R. S. "The Diode." In Power Electronics Semiconductor Switches, 90–122. Boston, MA: Springer US, 1993. http://dx.doi.org/10.1007/978-1-4757-6219-8_3.

Повний текст джерела
Стилі APA, Harvard, Vancouver, ISO та ін.

Тези доповідей конференцій з теми "Power semiconductor diodes"

1

Rezek, E. A., N. Adachi, D. Tran, and L. Yow. "High Power 1.3 Micron Laser Diodes." In Semiconductor Lasers. Washington, D.C.: Optica Publishing Group, 1987. http://dx.doi.org/10.1364/sla.1987.tud6.

Повний текст джерела
Стилі APA, Harvard, Vancouver, ISO та ін.
2

Delfyett, Jr., Peter J. "High-power ultrafast semiconductor laser diodes." In OE/LASE'93: Optics, Electro-Optics, & Laser Applications in Science& Engineering, edited by Timothy R. Gosnell, Antoinette J. Taylor, Keith A. Nelson, and Michael C. Downer. SPIE, 1993. http://dx.doi.org/10.1117/12.147075.

Повний текст джерела
Стилі APA, Harvard, Vancouver, ISO та ін.
3

Tomita, Nobuo, and Mitsuhiro Tateda. "High Power Semiconductor Laser Diodes for OTDRs." In Optical Fiber Sensors. Washington, D.C.: OSA, 1996. http://dx.doi.org/10.1364/ofs.1996.ex12.

Повний текст джерела
Стилі APA, Harvard, Vancouver, ISO та ін.
4

Sasaki, Y., Y. Furushima, T. Hosoda, T. Murakami, and H. Hasumi. "High Power Semiconductor Laser Diodes for OTDRs." In Optical Fiber Sensors. Washington, D.C.: OSA, 1996. http://dx.doi.org/10.1364/ofs.1996.we44.

Повний текст джерела
Стилі APA, Harvard, Vancouver, ISO та ін.
5

Niemax, K., C. Schnürer-Patschan, A. Zybin, H. Groll, and Y. Kuritsyn. "Wavelength Modulation Atomic Absorption Spectrometry With Semiconductor Diode Lasers." In Laser Applications to Chemical Analysis. Washington, D.C.: Optica Publishing Group, 1994. http://dx.doi.org/10.1364/laca.1994.wb.4.

Повний текст джерела
Анотація:
Commercial semiconductor laser diodes of the AlGaAs and AlGaInP types are small, long-lived devices with excellent spectroscopic properties [1]. They are easy to operate and have low power consumption. These are the requirements for the arrangement of many independently operating laser diodes in compact instruments for simultaneous multielement analysis [2]. The main drawback of atomic diode laser spectroscopy is the limited wavelength range of commercially available laser diodes (625-950 nm). It will be extended to shorter wavelengths in the short and medium run. However, if low radiation powers can be used in experiment, it can be overcome by second harmonic generation (SHG) in non-linear crystals. Depending on the fundamental power of the laser diodes and on the efficiency of the crystal used, extracavity SHG-powers in the nW and μW can be generated easily in the range 315-500 nm. Such powers are sufficiently high for laser atomic absorption spectroscopy (LA AS). A list including more than 50 elements which can be measured by LA AS with fundamental and SHG radiation is given in a recent review paper [3].
Стилі APA, Harvard, Vancouver, ISO та ін.
6

Welch, D. F. "Advances in high power semiconductor diode lasers and their applications." In The European Conference on Lasers and Electro-Optics. Washington, D.C.: Optica Publishing Group, 1994. http://dx.doi.org/10.1364/cleo_europe.1994.ctup1.

Повний текст джерела
Анотація:
Semiconductor laser diodes continue to advance in the field of high power lasers. Output powers of monolithic sources have been demonstrated in excess of 120 W cw, while stacked arrays of diodes have exceeded 400 kWatts peak output power. Several areas of advancement have been dramatically impacted by the technologies over the past 3 years including wavelength access of, single mode coherent operation of, and high reliability operation of laser diodes.
Стилі APA, Harvard, Vancouver, ISO та ін.
7

Bisping, D., D. Pucicki, S. Hofling, S. Habermann, D. Ewert, M. Fischer, J. Koeth, et al. "1240nm GaInNAs high power laser diodes." In 2008 IEEE 21st International Semiconductor Laser Conference (ISLC). IEEE, 2008. http://dx.doi.org/10.1109/islc.2008.4636004.

Повний текст джерела
Стилі APA, Harvard, Vancouver, ISO та ін.
8

Amaratunga, Gehan A. J. "Diamond Schottky diodes for power conversion." In 2007 International Workshop on Physics of Semiconductor Devices. IEEE, 2007. http://dx.doi.org/10.1109/iwpsd.2007.4472632.

Повний текст джерела
Стилі APA, Harvard, Vancouver, ISO та ін.
9

Mauerhoff, Felix, Oktay Senel, Hans Wenzel, Andre Maassdorf, Jos Boschker, Johannes Glaab, Katrin Paschke, and Günther Tränkle. "High power AlGaInP laser diodes at 626 nm." In Novel In-Plane Semiconductor Lasers XXIII, edited by Alexey A. Belyanin and Peter M. Smowton. SPIE, 2024. http://dx.doi.org/10.1117/12.3002216.

Повний текст джерела
Стилі APA, Harvard, Vancouver, ISO та ін.
10

Kanskar, M., L. Bao, Z. Chen, D. Dawson, M. DeVito, M. Grimshaw, X. Guan, et al. "Flared Oscillator Waveguide Diodes (FLOW-Diodes) Produce Record-High Single-Wavelength Fiber-Coupled Power." In 2018 IEEE International Semiconductor Laser Conference (ISLC). IEEE, 2018. http://dx.doi.org/10.1109/islc.2018.8516253.

Повний текст джерела
Стилі APA, Harvard, Vancouver, ISO та ін.
Також вас можуть зацікавити розширені добірки на тему "Power semiconductor diodes" для конкретних типів джерел:
Статті в журналах Дисертації Книги
Ми пропонуємо знижки на всі преміум-плани для авторів, чиї праці увійшли до тематичних добірок літератури. Зв'яжіться з нами, щоб отримати унікальний промокод!

До бібліографії