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Статті в журналах з теми "PECVD silicon carbide and silicon nitride"
ILIESCU, Ciprian. "A COMPREHENSIVE REVIEW ON THIN FILM DEPOSITIONS ON PECVD REACTORS." Annals of the Academy of Romanian Scientists Series on Science and Technology of Information 14, no. 1-2 (2021): 12–24. http://dx.doi.org/10.56082/annalsarsciinfo.2021.1-2.12.
Повний текст джерелаCho, Eun-Chel, Martin A. Green, Gavin Conibeer, Dengyuan Song, Young-Hyun Cho, Giuseppe Scardera, Shujuan Huang, et al. "Silicon Quantum Dots in a Dielectric Matrix for All-Silicon Tandem Solar Cells." Advances in OptoElectronics 2007 (August 28, 2007): 1–11. http://dx.doi.org/10.1155/2007/69578.
Повний текст джерелаAbdelal, Aysegul, and Peter Mascher. "(Invited) Comparison of Compositional, Optical and Mechanical Properties of Sicn Thin Films Prepared By Ecr-PECVD with Different Hydrocarbon Precursors." ECS Meeting Abstracts MA2022-02, no. 18 (October 9, 2022): 874. http://dx.doi.org/10.1149/ma2022-0218874mtgabs.
Повний текст джерелаFang, Kun, Rui Zhang, Tami Isaacs-Smith, R. Wayne Johnson, Emad Andarawis, and Alexey Vert. "Thin Film Multichip Packaging for High Temperature Digital Electronics." Additional Conferences (Device Packaging, HiTEC, HiTEN, and CICMT) 2011, HITEN (January 1, 2011): 000039–45. http://dx.doi.org/10.4071/hiten-paper1-rwjohnson.
Повний текст джерелаGalvão, Nierlly, Marciel Guerino, Tiago Campos, Korneli Grigorov, Mariana Fraga, Bruno Rodrigues, Rodrigo Pessoa, Julien Camus, Mohammed Djouadi, and Homero Maciel. "The Influence of AlN Intermediate Layer on the Structural and Chemical Properties of SiC Thin Films Produced by High-Power Impulse Magnetron Sputtering." Micromachines 10, no. 3 (March 22, 2019): 202. http://dx.doi.org/10.3390/mi10030202.
Повний текст джерелаKnowles, Kevin M., and Servet Turan. "Boron nitride–silicon carbide interphase boundaries in silicon nitride–silicon carbide particulate composites." Journal of the European Ceramic Society 22, no. 9-10 (September 2002): 1587–600. http://dx.doi.org/10.1016/s0955-2219(01)00481-2.
Повний текст джерелаBiasini, V., S. Guicciardi, and A. Bellosi. "Silicon nitride-silicon carbide composite materials." International Journal of Refractory Metals and Hard Materials 11, no. 4 (January 1992): 213–21. http://dx.doi.org/10.1016/0263-4368(92)90048-7.
Повний текст джерелаKodama, Hironori, Hiroshi Sakamoto, and Tadahiko Miyoshi. "Silicon Carbide Monofilament-Reinforced Silicon Nitride or Silicon Carbide Matrix Composites." Journal of the American Ceramic Society 72, no. 4 (April 1989): 551–58. http://dx.doi.org/10.1111/j.1151-2916.1989.tb06174.x.
Повний текст джерелаPruiti, Natale G., Charalambos Klitis, Christopher Gough, Stuart May, and Marc Sorel. "Thermo-optic coefficient of PECVD silicon-rich silicon nitride." Optics Letters 45, no. 22 (November 12, 2020): 6242. http://dx.doi.org/10.1364/ol.403357.
Повний текст джерелаGreim, J., A. Lipp, and K. Bettles. "Silicon Nitride and Silicon Carbide Turbocharger Rotors." Materials Science Forum 34-36 (January 1991): 623–27. http://dx.doi.org/10.4028/www.scientific.net/msf.34-36.623.
Повний текст джерелаДисертації з теми "PECVD silicon carbide and silicon nitride"
Razzell, Anthony Gordon. "Silicon carbide fibre silicon nitride matrix composites." Thesis, University of Warwick, 1992. http://wrap.warwick.ac.uk/110559/.
Повний текст джерелаChen, Wan Lam Florence Photovoltaics & Renewable Energy Engineering Faculty of Engineering UNSW. "PECVD silicon nitride for n-type silicon solar cells." Publisher:University of New South Wales. Photovoltaics & Renewable Energy Engineering, 2008. http://handle.unsw.edu.au/1959.4/41277.
Повний текст джерелаTatli, Zafer. "Silicon nitride and silicon carbide fabrication using coated powders." Thesis, University of Newcastle Upon Tyne, 2002. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.394640.
Повний текст джерелаTuran, Servet. "Microstructural characterisation of silicon nitride-silicon carbide particulate composites." Thesis, University of Cambridge, 1995. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.627653.
Повний текст джерелаKim, Hyoun-Ee. "Gaseous corrosion of silicon carbide and silicon nitride in hydrogen /." The Ohio State University, 1987. http://rave.ohiolink.edu/etdc/view?acc_num=osu1487327695622538.
Повний текст джерелаGao, Wei. "Oxidation of nitride-bonded silicon carbide (NBSC) and hot rod silicon carbide with coatings." Thesis, University of Strathclyde, 2001. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.366751.
Повний текст джерелаDominguez, Bucio Thalia. "NH3-free PECVD silicon nitride for photonic applications." Thesis, University of Southampton, 2018. https://eprints.soton.ac.uk/422874/.
Повний текст джерелаUnal, Ozer. "Interface studies in silicon nitride/silicon carbide and gallium indium arsenide/gallium arsenide systems." Case Western Reserve University School of Graduate Studies / OhioLINK, 1991. http://rave.ohiolink.edu/etdc/view?acc_num=case1059501714.
Повний текст джерелаDemir, Adem. "Silicon carbide fibre reinforced #beta#-sialon ceramics." Thesis, University of Newcastle Upon Tyne, 1998. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.391291.
Повний текст джерелаGasch, Matthew J. "Processing and mechanical properties of silicon nitride/silicon carbide ceramic nanocomposites derived from polymer precursors /." For electronic version search Digital dissertations database. Restricted to UC campuses. Access is free to UC campus dissertations, 2003. http://uclibs.org/PID/11984.
Повний текст джерелаКниги з теми "PECVD silicon carbide and silicon nitride"
Razzell, A. G. Silicon carbide fibre silicon nitride matrix composites. [s.l.]: typescript, 1992.
Знайти повний текст джерелаFeenstra, Randall M., and Colin E. C. Wood, eds. Porous Silicon Carbide and Gallium Nitride. Chichester, UK: John Wiley & Sons, Ltd, 2008. http://dx.doi.org/10.1002/9780470751817.
Повний текст джерелаCenter, Lewis Research, ed. Stability and rheology of dispersions of silicon nitride and silicon carbide. [Cleveland, Ohio]: National Aeronautics and Space Administration, 1987.
Знайти повний текст джерелаUnited States. National Aeronautics and Space Administration., ed. NDE reliability and process control for structural ceramics. [Washington, D.C.]: National Aeronautics and Space Administration, 1987.
Знайти повний текст джерелаW, Sheldon Brian, Danforth Stephen C, and Symposium on Silicon-Based Structural Ceramics (1993 : Honolulu, Hawaii), eds. Silicon-based structural ceramics. Westerville, Ohio: American Ceramic Society, 1994.
Знайти повний текст джерелаC, Wood Colin E., ed. Porous silicon carbide and gallium nitride: Epitaxy, catalysis, and biotechnology applications. Chichester, England: John Wiley & Sons, 2008.
Знайти повний текст джерелаRaftery, Theresa Maria. Electroconductive sialon-interstitial carbide composites. Dublin: University College Dublin, 1997.
Знайти повний текст джерелаE, Brito Manuel, Lin Hua-Tay, Plucknett Kevin, American Ceramic Society Meeting, and Symposium on Silicon-Based Structural Ceramics for the New Millennium (2002 : St. Louis, Mo.), eds. Silicon-based structural ceramics for the new Millennium: Proceedings of the Silicon-Based Structural Ceramics for the New Millennium Symposium : held at the 104th Annual Meeting of the American Ceramic Society : April 28-May 1, 2002, in St. Louis, Missouri. Westerville, Ohio: American Ceramic Society, 2003.
Знайти повний текст джерелаG, Penn B., and George C. Marshall Space Flight Center., eds. Preparation of silicon carbide-silicon nitride fibers by the pyrolysis of polycarbosilazane precursors: (Center director's Discretionary Fund final report). [Marshall Space Flight Center, Ala.]: National Aeronautics and Space Administration, George C. Marshall Space Flight Center, 1985.
Знайти повний текст джерелаJ, Roth Don, and Lewis Research Center, eds. Probability of detection of internal voids in structural ceramics using microfocus radiography. [Cleveland, Ohio: National Aeronautics and Space Administration, Lewis Research Center, 1985.
Знайти повний текст джерелаЧастини книг з теми "PECVD silicon carbide and silicon nitride"
Jones, Mark I., Ron Etzion, Jim Metson, You Zhou, Hideki Hyuga, Yuichi Yoshizawa, and Kiyoshi Hirao. "Reaction Bonded Silicon Nitride - Silicon Carbide and SiAlON - Silicon Carbide Refractories for Aluminium Smelting." In SiAlONs and Non-oxides, 235–38. Stafa: Trans Tech Publications Ltd., 2008. http://dx.doi.org/10.4028/3-908454-00-x.235.
Повний текст джерелаWan, Julin, Matt J. Gasch, and Amiya K. Mukherjee. "Nano-Nano Composites of Silicon Nitride and Silicon Carbide." In Ultrafine Grained Materials II, 235–44. Hoboken, NJ, USA: John Wiley & Sons, Inc., 2013. http://dx.doi.org/10.1002/9781118804537.ch27.
Повний текст джерелаAtwell, William H. "Polymeric Routes to Silicon Carbide and Silicon Nitride Fibers." In Advances in Chemistry, 593–606. Washington, DC: American Chemical Society, 1989. http://dx.doi.org/10.1021/ba-1990-0224.ch032.
Повний текст джерелаMatocha, Kevin, Ed Kaminsky, Alexei Vertiatchikh, and Jeff B. Casady. "High-Frequency SiC MESFETs with Silicon Dioxide/Silicon Nitride Passivation." In Silicon Carbide and Related Materials 2005, 1239–42. Stafa: Trans Tech Publications Ltd., 2006. http://dx.doi.org/10.4028/0-87849-425-1.1239.
Повний текст джерелаTsirlin, A. M. "Inorganic silicon carbide, Tyranno and silicon nitride fibres without substrate." In Fibre Science and Technology, 457–556. Dordrecht: Springer Netherlands, 1995. http://dx.doi.org/10.1007/978-94-011-0565-1_6.
Повний текст джерелаSchwark, J. M., and A. Lukacs. "Polysilazane Thermosets as Precursors for Silicon Carbide and Silicon Nitride." In ACS Symposium Series, 43–54. Washington, DC: American Chemical Society, 1994. http://dx.doi.org/10.1021/bk-1994-0572.ch005.
Повний текст джерелаKasuriya, Supawan, and Parjaree Thavorniti. "Preparation of Silicon Nitride-Silicon Carbide Composites from Abrasive SiC Powders." In Progress in Powder Metallurgy, 1073–76. Stafa: Trans Tech Publications Ltd., 2007. http://dx.doi.org/10.4028/0-87849-419-7.1073.
Повний текст джерелаGu, Z., J. H. Edgar, Balaji Raghothamachar, Michael Dudley, Dejin Zhuang, and Zlatko Sitar. "The Effect of Aluminum Nitride-Silicon Carbide Alloy Buffer Layers on the Sublimation Growth of Aluminum Nitride on SiC (0001) Substrates." In Silicon Carbide and Related Materials 2005, 1497–500. Stafa: Trans Tech Publications Ltd., 2006. http://dx.doi.org/10.4028/0-87849-425-1.1497.
Повний текст джерелаPérez-Tomás, A., Phillippe Godignon, Jean Camassel, Narcis Mestres, and Veronique Soulière. "PECVD Deposited TEOS for Field-Effect Mobility Improvement in 4H-SiC MOSFETs on the (0001) and (11-20) Faces." In Silicon Carbide and Related Materials 2005, 1047–50. Stafa: Trans Tech Publications Ltd., 2006. http://dx.doi.org/10.4028/0-87849-425-1.1047.
Повний текст джерелаKinoshita, Toshiya, Masanori Ueki, and Hiroshi Kubo. "Sintering of a Silicon Nitride Matrix Composite Reinforced with Silicon Carbide Whiskers." In Brittle Matrix Composites 2, 270–79. Dordrecht: Springer Netherlands, 1989. http://dx.doi.org/10.1007/978-94-009-2544-1_28.
Повний текст джерелаТези доповідей конференцій з теми "PECVD silicon carbide and silicon nitride"
Sheoran, Manav, Dong Seop Kim, Ajeet Rohatgi, H. F. W. Dekkers, G. Beaucarne, Matthew Young, and Sally Asher. "Hydrogen diffusion in silicon from PECVD silicon nitride." In 2008 33rd IEEE Photovolatic Specialists Conference (PVSC). IEEE, 2008. http://dx.doi.org/10.1109/pvsc.2008.4922638.
Повний текст джерелаChang, Li-Yang Sunny, Steve Pappert, and Paul K. L. Yu. "Thermo-optic Properties in PECVD Silicon Rich Silicon Carbide." In Novel Optical Materials and Applications. Washington, D.C.: Optica Publishing Group, 2022. http://dx.doi.org/10.1364/noma.2022.noth2e.4.
Повний текст джерелаJayan, V., Dev Alok, and P. R. Vaya. "Growth of silicon nitride by PECVD." In Madras - DL tentative. SPIE, 1992. http://dx.doi.org/10.1117/12.57013.
Повний текст джерелаPandraud, G., P. J. French, and P. M. Sarro. "PECVD Silicon Carbide Waveguides for Multichannel Sensors." In 2007 IEEE Sensors. IEEE, 2007. http://dx.doi.org/10.1109/icsens.2007.4388419.
Повний текст джерелаNejadriahi, Hani, Alex Friedman, Rajat Sharma, Steve Pappert, Yeshaiahu Fainman, and Paul Yu. "Enhanced thermo-optic effect in PECVD deposited silicon-rich silicon nitride." In 2020 IEEE Photonics Conference (IPC). IEEE, 2020. http://dx.doi.org/10.1109/ipc47351.2020.9252294.
Повний текст джерелаHickernell, F. S., T. S. Hickernell, and Ming Liaw Ming Liaw. "The acoustic properties of PECVD thin-film silicon carbide." In 1993 IEEE Ultasonics Symposium. IEEE, 1993. http://dx.doi.org/10.1109/ultsym.1993.339573.
Повний текст джерелаAvram, Marioara, Andrei Avram, Adina Bragaru, Bangtao Chen, Daniel Puiu Poenar, and Ciprian Iliescu. "Low stress PECVD amorphous silicon carbide for MEMS applications." In 2010 International Semiconductor Conference (CAS 2010). IEEE, 2010. http://dx.doi.org/10.1109/smicnd.2010.5650647.
Повний текст джерелаCuevas, Andres, Florence Chen, Jason Tan, Helmut Mackel, Saul Winderbaum, and Kristin Roth. "FTIR Analysis of Microwave-Excited PECVD Silicon Nitride Layers." In Conference Record of the 2006 IEEE 4th World Conference on Photovoltaic Energy Conversion. IEEE, 2006. http://dx.doi.org/10.1109/wcpec.2006.279365.
Повний текст джерелаChen, Florence, Jeffrey Cotter, Thorsten Trupke, and Robert Bardos. "Characterization of PECVD Silicon Nitride Passivation with Photoluminescence Imaging." In 2006 IEEE 4th World Conference on Photovoltaic Energy Conference. IEEE, 2006. http://dx.doi.org/10.1109/wcpec.2006.279687.
Повний текст джерелаLi, Yue, Yi Luo, Zhizeng Fang, Dengqin Xu, Qi Li, Xing Zhang, Yi Wang, and Dedong Han. "Deposition and Characterization of Ammonia-free PECVD Silicon Nitride." In 2023 24th International Vacuum Electronics Conference (IVEC). IEEE, 2023. http://dx.doi.org/10.1109/ivec56627.2023.10157925.
Повний текст джерелаЗвіти організацій з теми "PECVD silicon carbide and silicon nitride"
Jan W. Nowok, John P. Hurley, and John P. Kay. SiAlON COATINGS OF SILICON NITRIDE AND SILICON CARBIDE. Office of Scientific and Technical Information (OSTI), June 2000. http://dx.doi.org/10.2172/824976.
Повний текст джерелаSundberg, G. J. Analytical and Experimental Evaluation of Joining Silicon Carbide to Silicon Carbide and Silicon Nitride to Silicon Nitride for Advanced Heat Engine Applications Phase II. Office of Scientific and Technical Information (OSTI), January 1994. http://dx.doi.org/10.2172/814549.
Повний текст джерелаSundberg, G. J., A. M. Vartabedian, J. A. Wade, and C. S. White. Analytical and experimental evaluation of joining silicon carbide to silicon carbide and silicon nitride to silicon nitride for advanced heat engine applications Phase 2. Final report. Office of Scientific and Technical Information (OSTI), October 1994. http://dx.doi.org/10.2172/28303.
Повний текст джерелаBuss, R. J. Rf-plasma synthesis of nanosize silicon carbide and nitride. Final report. Office of Scientific and Technical Information (OSTI), February 1997. http://dx.doi.org/10.2172/453776.
Повний текст джерелаCross, M. T. Aluminum nitride-silicon carbide whisker composites: Processing, properties, and microstructural stability. Office of Scientific and Technical Information (OSTI), January 1990. http://dx.doi.org/10.2172/6381576.
Повний текст джерелаKingon, A. I., R. F. Davis, and A. K. Singh. Integrated Synthesis and Post Processing of Silicon Carbide and Aluminum Nitride. Fort Belvoir, VA: Defense Technical Information Center, December 1990. http://dx.doi.org/10.21236/ada230810.
Повний текст джерелаKang, S., J. H. Selverian, H. Kim, D. O'Niel, and K. Kim. Analytical and experimental evaluation of joining silicon nitride to metal and silicon carbide to metal for advanced heat engine applications. Office of Scientific and Technical Information (OSTI), April 1990. http://dx.doi.org/10.2172/6767279.
Повний текст джерелаKang, S., J. Selverian, D. O`Neil, H. Kim, and K. Kim. Analytical and experimental evaluation of joining silicon nitride to metal and silicon carbide to metal for advanced heat engine applications. Final report. Office of Scientific and Technical Information (OSTI), May 1993. http://dx.doi.org/10.2172/10176461.
Повний текст джерелаHabermehl, Scott D., Peggy J. Clews, Sasha Summers, and Sukwon Choi. Computational and Experimental Characterization of Aluminum Nitride-Silicon Carbide Thin Film Composites for High Temperature Sensor Applications. Office of Scientific and Technical Information (OSTI), December 2014. http://dx.doi.org/10.2172/1490541.
Повний текст джерелаMunro, R. G., and S. J. Dapkunas. Review of corrosion behavior of ceramic heat exchanger materals: Corrosion characteristics of silicon carbide and silicon nitride. Final report, September 11, 1992--March 11, 1993. Office of Scientific and Technical Information (OSTI), September 1993. http://dx.doi.org/10.2172/10180091.
Повний текст джерела