Готові списки джерел за темами / OPTOELECTRONICS APPLICATIONS

Добірка наукової літератури з теми "OPTOELECTRONICS APPLICATIONS"

Автор: Grafiati
Опубліковано: 11 вересня 2023

Оформте джерело за APA, MLA, Chicago, Harvard та іншими стилями

Оберіть тип джерела:

Зміст

Ознайомтеся зі списками актуальних статей, книг, дисертацій, тез та інших наукових джерел на тему "OPTOELECTRONICS APPLICATIONS".

Біля кожної праці в переліку літератури доступна кнопка «Додати до бібліографії». Скористайтеся нею – і ми автоматично оформимо бібліографічне посилання на обрану працю в потрібному вам стилі цитування: APA, MLA, «Гарвард», «Чикаго», «Ванкувер» тощо.

Також ви можете завантажити повний текст наукової публікації у форматі «.pdf» та прочитати онлайн анотацію до роботи, якщо відповідні параметри наявні в метаданих.

Статті в журналах з теми "OPTOELECTRONICS APPLICATIONS"

1

Soref, Richard. "Applications of Silicon-Based Optoelectronics." MRS Bulletin 23, no. 4 (April 1998): 20–24. http://dx.doi.org/10.1557/s0883769400030220.

Повний текст джерела
Анотація:
Silicon-based optoelectronics is a diversified technology that has grown steadily but not exponentially over the past decade. Some applications—such as smart-pixel signal processing and chip-to-chip optical interconnects—have enjoyed impressive growth, whereas other applications have remained quiescent. A few important applications such as optical diagnosis of leaky metal-oxide-semiconductor-field-effect-transistor circuits, have appeared suddenly. Over the years, research and development has unveiled some unique and significant aspects of Si-based optoelectronics. The main limitation of this technology is the lack of practical silicon light sources—Si lasers and efficient Si light-emitting devices (LEDs)—though investigators are “getting close” to the LED.Silicon-based optoelectronics refers to the integration of photonic and electronic components on a Si chip or wafer. The photonics adds value to the electronics, and the electronics offers low-cost mass-production benefits. The electronics includes complementary-metal-oxide semiconductors (CMOS), very large-scale integration (VLSI), bipolar CMOS, SiGe/Si heterojunction bipolar transistors, and heterostructure field-effect transistors. In this discussion, we will use a loose definition of optoelectronics that includes photonic and optoelectronic integrated circuits (PICs and OEICs), Si optical benches, and micro-optoelectromechanical (MOEM) platforms. Optoelectronic chips and platforms are subsystems of computer systems, communication networks, etc. Silicon substrates feature a superior native oxide, in addition to excellent thermal, mechanical, and economic properties. Silicon wafers “shine” as substrates for PICs and OEICs.
Стилі APA, Harvard, Vancouver, ISO та ін.
2

Amariucai-Mantu, Dorina, Violeta Mangalagiu, and Ionel I. Mangalagiu. "[3 + n] Cycloaddition Reactions: A Milestone Approach for Elaborating Pyridazine of Potential Interest in Medicinal Chemistry and Optoelectronics." Molecules 26, no. 11 (June 2, 2021): 3359. http://dx.doi.org/10.3390/molecules26113359.

Повний текст джерела
Анотація:
During the last few decades, pyridazine derivatives have emerged as privileged structures in heterocyclic chemistry, both because of their excellent chemistry and because of their potential applications in medicinal chemistry and optoelectronics. This review is focused on the recent advances in [3 + n] cycloaddition reactions in the pyridazine series as well as their medicinal chemistry and optoelectronic applications over the last ten years. The stereochemistry and regiochemistry of the cycloaddition reactions are discussed. Applications in optoelectronics (in particular, as fluorescent materials and sensors) and medicinal chemistry (in particular, antimicrobials and anticancer) are also reviewed.
Стилі APA, Harvard, Vancouver, ISO та ін.
3

Wang, Yuyin, Shiguo Han, Xitao Liu, Zhenyue Wu, Zhihua Sun, Dhananjay Dey, Yaobin Li, and Junhua Luo. "Exploring a lead-free organic–inorganic semiconducting hybrid with above-room-temperature dielectric phase transition." RSC Advances 10, no. 30 (2020): 17492–96. http://dx.doi.org/10.1039/c9ra09289g.

Повний текст джерела
Стилі APA, Harvard, Vancouver, ISO та ін.
4

Zhao, Mingyue, Yurui Hao, Chen Zhang, Rongli Zhai, Benqing Liu, Wencheng Liu, Cong Wang, et al. "Advances in Two-Dimensional Materials for Optoelectronics Applications." Crystals 12, no. 8 (August 4, 2022): 1087. http://dx.doi.org/10.3390/cryst12081087.

Повний текст джерела
Анотація:
The past one and a half decades have witnessed the tremendous progress of two-dimensional (2D) crystals, including graphene, transition-metal dichalcogenides, black phosphorus, MXenes, hexagonal boron nitride, etc., in a variety of fields. The key to their success is their unique structural, electrical, mechanical and optical properties. Herein, this paper gives a comprehensive summary on the recent advances in 2D materials for optoelectronic approaches with the emphasis on the morphology and structure, optical properties, synthesis methods, as well as detailed optoelectronic applications. Additionally, the challenges and perspectives in the current development of 2D materials are also summarized and indicated. Therefore, this review can provide a reference for further explorations and innovations of 2D material-based optoelectronics devices.
Стилі APA, Harvard, Vancouver, ISO та ін.
5

Chen, K. T. "Applications '90: Soviet optoelectronics." IEEE Spectrum 27, no. 2 (February 1990): 44–45. http://dx.doi.org/10.1109/6.45079.

Повний текст джерела
Стилі APA, Harvard, Vancouver, ISO та ін.
6

Wu, Jing, Yunshan Zhao, Minglei Sun, Minrui Zheng, Gang Zhang, Xinke Liu, and Dongzhi Chi. "Enhanced photoresponse of highly air-stable palladium diselenide by thickness engineering." Nanophotonics 9, no. 8 (February 21, 2020): 2467–74. http://dx.doi.org/10.1515/nanoph-2019-0542.

Повний текст джерела
Анотація:
AbstractRecently, layered two-dimensional (2D) palladium diselenide (PdSe2), with a unique low- symmetry puckered pentagon atomic morphology, has emerged as a promising candidate for next-generation nanoelectronics and optoelectronics because of its chemical stability and extraordinary electrical properties. Moreover, PdSe2 possesses a strong thickness-dependent bandgap that varies from 0 eV for bulk to 1.3 eV for monolayer, which can further render its potential applications in optoelectronics. However, the layer-dependent optoelectronic properties of PdSe2 are still lacking up to date. Herein, we studied the optoelectronics transport characteristics of high-quality PdSe2-based photodetectors with different thicknesses. We demonstrated an enhancement of PdSe2 photodetector performance owing to the band engineering via a thickness reduction. The highest responsivity of 5.35 A/W can be achieved with an external quantum efficiency of 1250% at the wavelength of 532 nm. We attribute such high performance in photoresponsivity to the high valley convergence in the conduction band of layered PdSe2, in agreement with first-principles calculation. Our results offer new insight into the layer-dependent optoelectronic properties of PdSe2 and open new avenues in engineering next-generation 2D-based electronics and optoelectronics.
Стилі APA, Harvard, Vancouver, ISO та ін.
7

Lu, Yangbin, Kang Qu, Tao Zhang, Qingquan He, and Jun Pan. "Metal Halide Perovskite Nanowires: Controllable Synthesis, Mechanism, and Application in Optoelectronic Devices." Nanomaterials 13, no. 3 (January 19, 2023): 419. http://dx.doi.org/10.3390/nano13030419.

Повний текст джерела
Анотація:
Metal halide perovskites are promising energy materials because of their high absorption coefficients, long carrier lifetimes, strong photoluminescence, and low cost. Low-dimensional halide perovskites, especially one-dimensional (1D) halide perovskite nanowires (NWs), have become a hot research topic in optoelectronics owing to their excellent optoelectronic properties. Herein, we review the synthetic strategies and mechanisms of halide perovskite NWs in recent years, such as hot injection, vapor phase growth, selfassembly, and solvothermal synthesis. Furthermore, we summarize their applications in optoelectronics, including lasers, photodetectors, and solar cells. Finally, we propose possible perspectives for the development of halide perovskite NWs.
Стилі APA, Harvard, Vancouver, ISO та ін.
8

Godlewski, M., E. Wolska, S. Yatsunenko, A. Opalińska, J. Fidelus, W. Łojkowski, M. Zalewska, A. Kłonkowski, and D. Kuritsyn. "Doped nanoparticles for optoelectronics applications." Low Temperature Physics 35, no. 1 (January 2009): 48–52. http://dx.doi.org/10.1063/1.3064908.

Повний текст джерела
Стилі APA, Harvard, Vancouver, ISO та ін.
9

Karamarković, J. "Essentials of optoelectronics with applications." Microelectronics Journal 29, no. 12 (December 1998): 1039. http://dx.doi.org/10.1016/s0026-2692(98)00010-x.

Повний текст джерела
Стилі APA, Harvard, Vancouver, ISO та ін.
10

Li, Zimin, and Ye Tian. "Nano-Bismuth-Sulfide for Advanced Optoelectronics." Photonics 9, no. 11 (October 24, 2022): 790. http://dx.doi.org/10.3390/photonics9110790.

Повний текст джерела
Анотація:
Bi2S3is a semiconductor with rational band gap around near-IR and visible range, and its nanostructures (or nano-Bi2S3) have attracted great attention due to its promising performances in optoelectronic materials and devices. An increasing number of reports point to the potential of such nanostructures to support a number of optical applications, such as photodetectors, solar cells and photocatalysts. With the aim of providing a comprehensive basis for exploiting the full potential of Bi2S3 nanostructures on optoelectronics, we review the current progress in their controlled fabrication, the trends reported (from theoretical calculations and experimental observations) in their electrical properties and optical response, and their emerging applications.
Стилі APA, Harvard, Vancouver, ISO та ін.
Більше джерел

Дисертації з теми "OPTOELECTRONICS APPLICATIONS"

1

Lee, Tae-Hee. "Silver nanocluster single molecule optoelectronics and its applications." Diss., Available online, Georgia Institute of Technology, 2004:, 2004. http://etd.gatech.edu/theses/available/etd-01302004-144007/unrestricted/lee%5Ftaehee%5F200405%5Fphd.pdf.

Повний текст джерела
Анотація:
Thesis (Ph. D.)--Chemistry and Biochemistry, Georgia Institute of Technology, 2004.
Srinivasarao, Mohan, Committee Member; Sherrill, C. David, Committee Member; Orlando, Thomas, Committee Member; EL-Sayed, Mostafa, Committee Member; Dickson, Robert, Committee Chair. Vita. Includes bibliographical references (leaves 136-159).
Стилі APA, Harvard, Vancouver, ISO та ін.
2

Annetts, Paul Julian. "Advanced applications of semiconductor optical amplifiers." Thesis, University of Bristol, 1999. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.299275.

Повний текст джерела
Стилі APA, Harvard, Vancouver, ISO та ін.
3

Lansley, Stuart Peter. "Diamond photodetectors for deep ultra-violet applications." Thesis, University College London (University of London), 2002. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.269925.

Повний текст джерела
Стилі APA, Harvard, Vancouver, ISO та ін.
4

Occhi, Luca. "PEDOT:PSS-based hybrid materials for optoelectronics applications." Thesis, Imperial College London, 2017. http://hdl.handle.net/10044/1/61335.

Повний текст джерела
Анотація:
Organic electronics is a research area that, in recent year, has received increasing attention both from academia and industry. Performance of organic optoelectronic devices, such as organic light-emitting diodes (OLEDs) and organic photovoltaic devices (OPVs), relies on the electrical and optical characteristics of each component. However, the performance are frequently limited by the distribution of the internal electromagnetic field: an effective light management, involving either the incoupling of incident radiation (in case of photovoltaic cells and photo-detectors), or the outcoupling of emitted light (for light-emitting diodes), is crucial. The electric field distribution may be optimised by adjusting the device geometry or, alternatively, by modifying the optical properties (i.e. refractive index and absorption coefficient) of each component. Developing a material with tunable optical properties, whilst maintaining acceptable electrical characteristics, would offer a significant alternative in high-performance devices. Among the different compounds used in organic devices, the charge injection/extraction materials play a key role: the ubiquitous poly(3,4-ethylenedioxythiophene):polystyrene sulfonate (PEDOT:PSS) is an example of an organic compound often limited (in thickness) by the optical losses. In this work we introduce an innovative, solution-processable, inorganic/organic hybrid material based on PEDOT:PSS, which could be used as an efficient hole-transport layer, or as an electrode, in OLEDs and OPVs. The hybrid system exhibits high optical quality, a dramatic increase of refractive index (up to +12-13%), and a decrease in work function, whilst maintaining good electrical conductivity. We prove the effectiveness of our approach both by modeling the distribution of normalised modulus squared of the optical electric field in light-emitting structures. Furthermore, we fabricate and characterise optoelectronic devices (OLEDs and OPVs) with PEDOT:PSS hybrid hole-transport layers, demonstrating an increase of efficiency in the organic light-emitting diodes. Finally, we investigate the thermoelectric properties of hybrid material, thus opening interesting new applications for our hybrid compound.
Стилі APA, Harvard, Vancouver, ISO та ін.
5

Asil, Demet. "Hybrid functional semiconductors for optoelectronic applications." Thesis, University of Cambridge, 2015. https://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.708582.

Повний текст джерела
Стилі APA, Harvard, Vancouver, ISO та ін.
6

Moreira, Paulo Manuel Rodrigues Simões. "Optical receiver design and optimisation for multi-gigahertz applications." Thesis, Bangor University, 1993. https://research.bangor.ac.uk/portal/en/theses/optical-receiver-design-and-optimisation-for-multigigahertz-applications(851ce42c-3b48-488f-88c3-8f4137b79607).html.

Повний текст джерела
Анотація:
This thesis is concerned with structures and design techniques appropriate for the realisation of integrated optical receivers operating at multi-gigahertz frequencies. The development and practical proving of novel signal designs tailored specifically to very high bit-rate optical communication systems is reported. Timing imperfections and signal dependent noise - a result of the optical amplification deployed in all high-performance systems - are two major impairments that must be accommodated if optimum system performance is to be achieved. Here, a signal design that accommodates these impairments is developed and compared to established designs. The new signal designs are shown to provide improved performance, in particular, they exhibit tolerance to uncertainty in the exact level of the impairment. Following the derivation of the signal designs a range of practical realisations are described. A receiver amplifier GaAs MMIC for 4.8 Gbit/s operation with embedded signal shaping is described followed by the design and test of integrated post-detection filters for 10 and 15 Gbit/s systems. The susceptibility of the embedded signal shaping receiver to variations in photodiode capacitance leads to the development and test of a low inputimpedance common-gate 5 Gbit/s GaAs MMIC receiver. To effect signal shaping at very high data-rates a modified distributed amplifier structure is proposed which better utilises the capabilities of the available foundry processes. Two distributed amplifier based optical receivers with embedded signal shaping are devised and simulation results for 10 Gbit/s show the efficacy of this design approach. The implications of noise matching are investigated and a 2 GHz SCM receiver is used as a vehicle to illustrate the methods developed. The long term goal of receiver design is to fully integrate bnth optical and electrical components onto a single chip. A preliminary investigation of the feasibility of this goal is carried out on an experimental InP-based process. Two receiver designs for 10 Gbit/s were prepared as a precursor to a detailed design of an OEIC with embedded signal shaping that incorporates the novel topologies developed during this work.
Стилі APA, Harvard, Vancouver, ISO та ін.
7

Gebremichael, Yonas Meressi. "Highly birefringent fibre based polarisation modulated ellipsometry and sensor applications." Thesis, City University London, 2000. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.390940.

Повний текст джерела
Стилі APA, Harvard, Vancouver, ISO та ін.
8

Addington, J. Shawn. "Integrated optoelectronics applications in fiber optic receiver packaging." Diss., Virginia Tech, 1995. http://hdl.handle.net/10919/37463.

Повний текст джерела
Анотація:
The objective of this research is the' development and evaluation of a new style of integrated optoelectronics. The approach combines the selectivity of traditional hybrid integration with the "internal" interconnection capabilities of monolithic integration, through the use of low temperature cofireable ceramic (LTCC) tape systems. This new integration technique is applied to a fiber optic receiver system, and focuses on three main tasks. The first task involves the realization, and eventual hybridization, of the receiver electronics, including the photodetector and the associated amplifier circuitry. Second, materials and techniques for the processing of planar optical waveguides are investigated, in order to expand the potential applications of the technique. Finally, a new technique of integrating an optical fiber with the above components is introduced and evaluated. Multichip module (MCM) technology has become the new standard in the field of electronic packaging. Much of the success of MCM packaging may be attributed to the development of LTCC systems. LTCC materials utilize their multilayer (3-dimensional) nature to achieve a higher level of electronic circuit density within a hermetic module. The goal of this research effort is to expand this capability to include optical components, in addition to the traditional electronics. The optical counterpart to the printed electrical wiring within an LTCC package is the planar waveguide. Much of this research is therefore devoted to an investigation of materials and processing techniques used to develop planar optical waveguide structures. This research discusses the production and evaluation of both thin film and thick film structures based on germanium oxide (GeO₂) - a material with promising photosensitivity characteristics. As has been seen with optical fibers, the optimization of planar optical waveguides is also not a trivial task. Aside from the material and processing concerns, there is also the compatibility with cofireable ceramic materials that must be addressed. Once these planar optical waveguides are able to be incorporated within the internal layers of the multichip module, there must be a means of accessing them from the outside of the package. Thus this research work also investigates the ability to integrate optical fibers within LTCC materials. Traditional optical fiber connectors are not suitable for this application, since the interface between fiber and waveguide will be inside a hermetic module. This research discusses the techniques used to· achieve this novel integration capability. The planar optical waveguides developed in this work are not yet optimized for full integration within cofireable ceramic materials. Thus, the interface between fiber and waveguide is theoretically. analyzed from the perspective of coupling efficiency. Nevertheless, the ability to integrate an optical fiber within an LTCC module is demonstrated through the development of a fiber optic receiver module. One of the benefits of the integration technique proposed in this research work is selectivity. This feature is demonstrated through the evaluation and selection of individual components of the receiver system. This work demonstrates that the selection of receiver components is not dictated by the integration technology, but is determined instead by individual performance characteristics. Through the hybridization of the receiver circuitry and the successful integration of an optical fiber within the LTCC material, a functional integrated fiber optic receiver module has been completed. In addition, this research into the development of both thick and thin film planar optical waveguide materials is an important step toward the eventual integration of these devices.
Ph. D.
Стилі APA, Harvard, Vancouver, ISO та ін.
9

Pratt, Andrew Richard. "Control of indium migration on patterned substrates for optoelectronic device applications." Thesis, Imperial College London, 1995. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.307775.

Повний текст джерела
Стилі APA, Harvard, Vancouver, ISO та ін.
10

Moon, Kevin. "Design and characterisation of CCD detector systems for x-ray applications." Thesis, University of York, 1996. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.311014.

Повний текст джерела
Стилі APA, Harvard, Vancouver, ISO та ін.
Більше джерел

Книги з теми "OPTOELECTRONICS APPLICATIONS"

1

Essentials of optoelectronics: With applications. London: Chapman & Hall, 1997.

Знайти повний текст джерела
Стилі APA, Harvard, Vancouver, ISO та ін.
2

Maini, Anil Kumar. Lasers and optoelectronics: Fundamentals, devices, and applications. Chichester, West Sussex, United Kingdom: Wiley, 2013.

Знайти повний текст джерела
Стилі APA, Harvard, Vancouver, ISO та ін.
3

Predeep, P. Optoelectronics: Devices and applications. Rijeka, Croatia: InTech, 2011.

Знайти повний текст джерела
Стилі APA, Harvard, Vancouver, ISO та ін.
4

Nunley, William. Infrared optoelectronics: Devices and applications. New York: M. Dekker, 1987.

Знайти повний текст джерела
Стилі APA, Harvard, Vancouver, ISO та ін.
5

1946-, Wada O., ed. Optoelectronic integration: Physics, technology, and applications. Boston: Kluwer Academic, 1994.

Знайти повний текст джерела
Стилі APA, Harvard, Vancouver, ISO та ін.
6

1932-, Weber Marvin J., ed. Selected papers on phosphors, light emitting diodes, and scintillators: Applications of photoluminescence, cathodoluminescence, electroluminescence, and radioluminescence. Bellingham, Wash: SPIE Optical Engineering Press, 1998.

Знайти повний текст джерела
Стилі APA, Harvard, Vancouver, ISO та ін.
7

M, Razeghi, Society of Photo-optical Instrumentation Engineers., Europtica Services I. C, American Physical Society, and International Conference on Physical Concepts of Materials for Novel Optoelectronic Device Applications (1990 : Aachen, Germany), eds. Physical concepts of materials for novel optoelectronic device applications II: Device physics and applications : 28 October-2 November 1990, Aachen, Federal Republic of Germany. Bellingham, Wash., USA: SPIE, 1991.

Знайти повний текст джерела
Стилі APA, Harvard, Vancouver, ISO та ін.
8

Yingyi, Lin, and Chen Yiwei, eds. 2007 guang dian ying yong chan ye liao wang yu pou xi. Taibei Shi: Guang dian ke ji gong ye xie jin hui, 2007.

Знайти повний текст джерела
Стилі APA, Harvard, Vancouver, ISO та ін.
9

Brasche, Ulrich. Intelligent sensors: Technology, applications, and European markets. Berlin: VDE-Verlag, 1989.

Знайти повний текст джерела
Стилі APA, Harvard, Vancouver, ISO та ін.
10

Haben, Michael S. Applications of optoelectronics in high-energy physics. Birmingham: University ofBirmingham, 1994.

Знайти повний текст джерела
Стилі APA, Harvard, Vancouver, ISO та ін.
Більше джерел

Частини книг з теми "OPTOELECTRONICS APPLICATIONS"

1

Imran, Mohd, Mohammad Shariq, and Mottahi Alam. "Optoelectronics for Biomedical Applications." In Nanomaterials for Optoelectronic Applications, 233–82. Boca Raton: Apple Academic Press, 2021. http://dx.doi.org/10.1201/9781003083948-8.

Повний текст джерела
Стилі APA, Harvard, Vancouver, ISO та ін.
2

Saulnier, J. "Lithium Niobate For Optoelectronic Applications." In Materials for Optoelectronics, 293–339. Boston, MA: Springer US, 1996. http://dx.doi.org/10.1007/978-1-4613-1317-5_11.

Повний текст джерела
Стилі APA, Harvard, Vancouver, ISO та ін.
3

Weber, Alexander. "Inter-Sublevel Transitions in Quantum Dots and Device Applications." In Nano-Optoelectronics, 371–90. Berlin, Heidelberg: Springer Berlin Heidelberg, 2002. http://dx.doi.org/10.1007/978-3-642-56149-8_16.

Повний текст джерела
Стилі APA, Harvard, Vancouver, ISO та ін.
4

Khenfouch, Mohammed, Mimouna Baitoul, and Malik Maaza. "Graphene for the Elaboration of Nanocomposite Films for Optoelectronic Applications." In Graphene Optoelectronics, 41–62. Weinheim, Germany: Wiley-VCH Verlag GmbH & Co. KGaA, 2014. http://dx.doi.org/10.1002/9783527677788.ch3.

Повний текст джерела
Стилі APA, Harvard, Vancouver, ISO та ін.
5

Tsai, Chen S. "Integrated Magnetooptic Bragg Cell Modules and Applications." In Guided-Wave Optoelectronics, 237–47. Boston, MA: Springer US, 1995. http://dx.doi.org/10.1007/978-1-4899-1039-4_30.

Повний текст джерела
Стилі APA, Harvard, Vancouver, ISO та ін.
6

Trivedi, Dhrupad A., and Neal G. Anderson. "Strained-Layer Superlattices for Polarization-Insensitive Integrated Waveguide Applications." In Guided-Wave Optoelectronics, 205–11. Boston, MA: Springer US, 1995. http://dx.doi.org/10.1007/978-1-4899-1039-4_26.

Повний текст джерела
Стилі APA, Harvard, Vancouver, ISO та ін.
7

Leonberger, Fred J., and Robert W. Ade. "Development and Applications of Commercial LiNbO3 Guided-Wave Devices." In Guided-Wave Optoelectronics, 5–7. Boston, MA: Springer US, 1995. http://dx.doi.org/10.1007/978-1-4899-1039-4_3.

Повний текст джерела
Стилі APA, Harvard, Vancouver, ISO та ін.
8

Dror, J., D. Mendlovic, E. Goldenberg, and N. Croitoru. "Infrared Plastic Waveguides for Surgical Applications." In LASER Optoelectronics in Medicine, 45–48. Berlin, Heidelberg: Springer Berlin Heidelberg, 1988. http://dx.doi.org/10.1007/978-3-642-72870-9_12.

Повний текст джерела
Стилі APA, Harvard, Vancouver, ISO та ін.
9

Kubo, U., and K. Okada. "Medical Applications of KrF Excimer Laser." In LASER Optoelectronics in Medicine, 27–30. Berlin, Heidelberg: Springer Berlin Heidelberg, 1988. http://dx.doi.org/10.1007/978-3-642-72870-9_7.

Повний текст джерела
Стилі APA, Harvard, Vancouver, ISO та ін.
10

Reuter, R. "Hydrographic Applications of Airborne Laser Spectroscopy." In Optoelectronics for Environmental Science, 149–60. Boston, MA: Springer US, 1990. http://dx.doi.org/10.1007/978-1-4684-5895-4_13.

Повний текст джерела
Стилі APA, Harvard, Vancouver, ISO та ін.

Тези доповідей конференцій з теми "OPTOELECTRONICS APPLICATIONS"

1

Straub, Karl D. "Biomedical applications of FELs." In Optoelectronics '99 - Integrated Optoelectronic Devices, edited by Harold E. Bennett and David H. Dowell. SPIE, 1999. http://dx.doi.org/10.1117/12.352665.

Повний текст джерела
Стилі APA, Harvard, Vancouver, ISO та ін.
2

Wipiejewski, Torsten, Hans-Dieter Wolf, Lutz Korte, Wolfgang Huber, Guenter Kristen, Charlotte Hoyler, Harald Hedrich, et al. "VCSELs for datacom applications." In Optoelectronics '99 - Integrated Optoelectronic Devices, edited by Kent D. Choquette and Chun Lei. SPIE, 1999. http://dx.doi.org/10.1117/12.347093.

Повний текст джерела
Стилі APA, Harvard, Vancouver, ISO та ін.
3

Kurtz, Ron M., Greg J. R. Spooner, Karin R. Sletten, Kimberly G. Yen, Samir I. Sayegh, Frieder H. Loesel, Christopher Horvath, et al. "Ophthalmic applications of femtosecond lasers." In Optoelectronics '99 - Integrated Optoelectronic Devices, edited by Murray K. Reed and Joseph Neev. SPIE, 1999. http://dx.doi.org/10.1117/12.351821.

Повний текст джерела
Стилі APA, Harvard, Vancouver, ISO та ін.
4

Li, Ming, Xi-Cheng Zhang, Gregg D. Sucha, and Donald J. Harter. "Portable terahertz system and its applications." In Optoelectronics '99 - Integrated Optoelectronic Devices, edited by Murray K. Reed and Joseph Neev. SPIE, 1999. http://dx.doi.org/10.1117/12.351830.

Повний текст джерела
Стилі APA, Harvard, Vancouver, ISO та ін.
5

Marion II, John E., and Beop-Min Kim. "Medical applications of ultrashort-pulse lasers." In Optoelectronics '99 - Integrated Optoelectronic Devices, edited by Murray K. Reed and Joseph Neev. SPIE, 1999. http://dx.doi.org/10.1117/12.351839.

Повний текст джерела
Стилі APA, Harvard, Vancouver, ISO та ін.
6

Kurtz, David S., Robert M. Weikle II, Thomas W. Crowe, and Jeffrey L. Hesler. "Sideband generators for submillimeter-wave applications." In Optoelectronics '99 - Integrated Optoelectronic Devices, edited by Mark S. Sherwin. SPIE, 1999. http://dx.doi.org/10.1117/12.347112.

Повний текст джерела
Стилі APA, Harvard, Vancouver, ISO та ін.
7

Johnson, Eric G., Charles S. Koehler, Thomas J. Suleski, Jared D. Stack, and Michael R. Feldman. "Diffractive microrods for fiber optic applications." In Optoelectronics '99 - Integrated Optoelectronic Devices, edited by Ivan Cindrich, Sing H. Lee, and Richard L. Sutherland. SPIE, 1999. http://dx.doi.org/10.1117/12.349325.

Повний текст джерела
Стилі APA, Harvard, Vancouver, ISO та ін.
8

Munoz Merino, Elias, E. Monroy, Fernando Calle, Miguel A. Sanchez, Enrico Calleja, Franck Omnes, Pierre J. L. Gibart, Francisco Jaque, and Inigo Aguirre de Carcer. "AlGaN-based photodetectors for solar UV applications." In Optoelectronics '99 - Integrated Optoelectronic Devices, edited by Gail J. Brown and Manijeh Razeghi. SPIE, 1999. http://dx.doi.org/10.1117/12.344557.

Повний текст джерела
Стилі APA, Harvard, Vancouver, ISO та ін.
9

Sovetov, Nikolay M., Anatoly V. Nikonov, Dmitry A. Grigoriev, Andrey V. Khobotov, Victor A. Moskovsky, and Elena V. Naumova. "Atom projector: basic concept, construction, and applications." In Optoelectronics '99 - Integrated Optoelectronic Devices, edited by Jan J. Dubowski, Henry Helvajian, Ernst-Wolfgang Kreutz, and Koji Sugioka. SPIE, 1999. http://dx.doi.org/10.1117/12.352711.

Повний текст джерела
Стилі APA, Harvard, Vancouver, ISO та ін.
10

Shiratori, Akira, and Minoru Obara. "Photorefractive coherence gating for laser interferometric applications." In Optoelectronics '99 - Integrated Optoelectronic Devices, edited by Kathleen I. Schaffers and Lawrence E. Myers. SPIE, 1999. http://dx.doi.org/10.1117/12.349222.

Повний текст джерела
Стилі APA, Harvard, Vancouver, ISO та ін.

Звіти організацій з теми "OPTOELECTRONICS APPLICATIONS"

1

Czaplewski, David A., Darwin Keith Serkland, Roy H. ,. III Olsson, Gregory R. Bogart, Uma Krishnamoorthy, Mial E. Warren, Dustin Wade Carr, Murat Okandan, and Kenneth Allen Peterson. Integrated NEMS and optoelectronics for sensor applications. Office of Scientific and Technical Information (OSTI), January 2008. http://dx.doi.org/10.2172/950096.

Повний текст джерела
Стилі APA, Harvard, Vancouver, ISO та ін.
2

McIlroy, David. Two-Dimensional Photonic Crystals for Near IR and Visible Optoelectronics Applications. Fort Belvoir, VA: Defense Technical Information Center, January 2005. http://dx.doi.org/10.21236/ada430192.

Повний текст джерела
Стилі APA, Harvard, Vancouver, ISO та ін.
3

Barron, Andrew R. Group III Materials: Molecular Design of New Phases with Applications in Electronics and Optoelectronics,. Fort Belvoir, VA: Defense Technical Information Center, July 1996. http://dx.doi.org/10.21236/ada310607.

Повний текст джерела
Стилі APA, Harvard, Vancouver, ISO та ін.
4

Barron, Andrew R. Group III Materials: New Phases and Nano-Particles with Applications in Electronics and Optoelectronics. Fort Belvoir, VA: Defense Technical Information Center, December 1999. http://dx.doi.org/10.21236/ada377550.

Повний текст джерела
Стилі APA, Harvard, Vancouver, ISO та ін.
5

Choi, Byung J. Innovative Nanoimprint Tools for Optoelectronic Applications. Fort Belvoir, VA: Defense Technical Information Center, May 2002. http://dx.doi.org/10.21236/ada402061.

Повний текст джерела
Стилі APA, Harvard, Vancouver, ISO та ін.
6

Jacobs, Stephen, and Juergen Pohlmann. Optoelectronic Workshops 4: Liquid Crystals for Laser Applications. Fort Belvoir, VA: Defense Technical Information Center, May 1988. http://dx.doi.org/10.21236/ada202526.

Повний текст джерела
Стилі APA, Harvard, Vancouver, ISO та ін.
7

Agrawal, Govind, and C. W. Trussell. Optoelectronic Workshops 27: Semiconductor Lasers and Their Applications. Fort Belvoir, VA: Defense Technical Information Center, December 1990. http://dx.doi.org/10.21236/ada233779.

Повний текст джерела
Стилі APA, Harvard, Vancouver, ISO та ін.
8

Rose, B., and R. Keefe. AlGaAs/GaAs radiation-hardened photodiode for optoelectronic component applications. Office of Scientific and Technical Information (OSTI), June 1989. http://dx.doi.org/10.2172/6000907.

Повний текст джерела
Стилі APA, Harvard, Vancouver, ISO та ін.
9

DiJaili, S. P. Novel operation of semiconductor optical amplifier (SOA) for optoelectronic applications. Office of Scientific and Technical Information (OSTI), March 1996. http://dx.doi.org/10.2172/491215.

Повний текст джерела
Стилі APA, Harvard, Vancouver, ISO та ін.
10

Russell, S. D. Photoresponse Studies of Ion-Damaged Germanium for Optoelectronic Switch Applications. Fort Belvoir, VA: Defense Technical Information Center, December 1990. http://dx.doi.org/10.21236/ada232091.

Повний текст джерела
Стилі APA, Harvard, Vancouver, ISO та ін.
Також вас можуть зацікавити розширені добірки на тему "OPTOELECTRONICS APPLICATIONS" для конкретних типів джерел:
Статті в журналах Дисертації Книги
Ми пропонуємо знижки на всі преміум-плани для авторів, чиї праці увійшли до тематичних добірок літератури. Зв'яжіться з нами, щоб отримати унікальний промокод!

До бібліографії