Добірка наукової літератури з теми "Optoelectronic transistors"
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Статті в журналах з теми "Optoelectronic transistors"
Soldano, Caterina. "Engineering Dielectric Materials for High-Performance Organic Light Emitting Transistors (OLETs)." Materials 14, no. 13 (July 5, 2021): 3756. http://dx.doi.org/10.3390/ma14133756.
Повний текст джерелаSoref, Richard. "Applications of Silicon-Based Optoelectronics." MRS Bulletin 23, no. 4 (April 1998): 20–24. http://dx.doi.org/10.1557/s0883769400030220.
Повний текст джерелаPan, James N. "Chromatic and Panchromatic Nonlinear Optoelectronic CMOSFETs for CMOS Image Sensors, Laser Multiplexing, Computing, and Communication." MRS Advances 5, no. 37-38 (2020): 1965–74. http://dx.doi.org/10.1557/adv.2020.273.
Повний текст джерелаHuseynova, Gunel, and Vladislav Kostianovskii. "Doped organic field-effect transistors." Material Science & Engineering International Journal 2, no. 6 (December 5, 2018): 212–15. http://dx.doi.org/10.15406/mseij.2018.02.00059.
Повний текст джерелаZhang, Junyao, Yang Lu, Shilei Dai, Ruizhi Wang, Dandan Hao, Shiqi Zhang, Lize Xiong, and Jia Huang. "Retina-Inspired Organic Heterojunction-Based Optoelectronic Synapses for Artificial Visual Systems." Research 2021 (February 22, 2021): 1–10. http://dx.doi.org/10.34133/2021/7131895.
Повний текст джерелаGao, Haikuo, Jinyu Liu, Zhengsheng Qin, Tianyu Wang, Can Gao, Huanli Dong, and Wenping Hu. "High-performance amorphous organic semiconductor-based vertical field-effect transistors and light-emitting transistors." Nanoscale 12, no. 35 (2020): 18371–78. http://dx.doi.org/10.1039/d0nr03569f.
Повний текст джерелаVyas, Sumit. "A Short Review on Properties and Applications of Zinc Oxide Based Thin Films and Devices : ZnO as a promising material for applications in electronics, optoelectronics, biomedical and sensors." Johnson Matthey Technology Review 64, no. 2 (April 1, 2020): 202–18. http://dx.doi.org/10.1595/205651320x15694993568524.
Повний текст джерелаWu, Jieyun, Qing Li, Wen Wang, and Kaixin Chen. "Optoelectronic Properties and Structural Modification of Conjugated Polymers Based on Benzodithiophene Groups." Mini-Reviews in Organic Chemistry 16, no. 3 (January 25, 2019): 253–60. http://dx.doi.org/10.2174/1570193x15666180406144851.
Повний текст джерелаUrey, Z., D. Wake, D. J. Newson, and I. D. Henning. "Comparison of InGaAs transistors as optoelectronic mixers." Electronics Letters 29, no. 20 (1993): 1796. http://dx.doi.org/10.1049/el:19931195.
Повний текст джерелаHong, Tu, Bhim Chamlagain, Wenzhi Lin, Hsun-Jen Chuang, Minghu Pan, Zhixian Zhou, and Ya-Qiong Xu. "Polarized photocurrent response in black phosphorus field-effect transistors." Nanoscale 6, no. 15 (2014): 8978–83. http://dx.doi.org/10.1039/c4nr02164a.
Повний текст джерелаДисертації з теми "Optoelectronic transistors"
Bird, Matthew J. "Optoelectronic processes in polyfluorene ambipolar transistors." Thesis, University of Cambridge, 2011. https://www.repository.cam.ac.uk/handle/1810/256013.
Повний текст джерелаLiu, Chin Pang. "Optoelectronic mixing in heterojunction bipolar transistors." Thesis, University College London (University of London), 2000. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.312033.
Повний текст джерелаHuang, Yong. "InAlGaAs/InP light emitting transistors and transistor lasers operating near 1.55 μm". Diss., Georgia Institute of Technology, 2010. http://hdl.handle.net/1853/37298.
Повний текст джерелаLoga, Rodney Izzat. "HBT/DHBTs for monolithic optoelectronic interfaces." Thesis, King's College London (University of London), 2002. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.268719.
Повний текст джерелаTan, Eugene. "Design, fabrication and characterization of N-channel InGaAsP-InP based inversion channel technology devices (ICT) for optoelectronic integrated circuits (OEIC), double heterojunction optoelectronic switches (DOES), heterojunction field-effect transistors (HFET), bipolar inversion channel field-effect transistors (BICFET) and bipolar inversion channel phototransistors (BICPT)." Thesis, National Library of Canada = Bibliothèque nationale du Canada, 1998. http://www.collectionscanada.ca/obj/s4/f2/dsk1/tape11/PQDD_0006/NQ42767.pdf.
Повний текст джерелаHo, Kai Wai. "Evaluation and characterization of efficient organic optoelectronic materials and devices." HKBU Institutional Repository, 2020. https://repository.hkbu.edu.hk/etd_oa/816.
Повний текст джерелаHo, Ka Wai. "Evaluation and characterization of efficient organic optoelectronic materials and devices." HKBU Institutional Repository, 2020. https://repository.hkbu.edu.hk/etd_oa/873.
Повний текст джерелаFiebig, Matthias. "Spatially resolved electronic and optoelectronic measurements of pentacene thin film transistors." Diss., lmu, 2010. http://nbn-resolving.de/urn:nbn:de:bvb:19-122033.
Повний текст джерелаUnal, Selim. "Field-effect transistors and optoelectronic devices based on emerging atomically thin materials." Thesis, University of Exeter, 2017. http://hdl.handle.net/10871/27140.
Повний текст джерелаYang, Tiebin. "Interfacial Engineering of Thin Single-Crystal Lead Halide Perovskites for High-Performance Optoelectronic Devices." Thesis, The University of Sydney, 2022. https://hdl.handle.net/2123/28205.
Повний текст джерелаКниги з теми "Optoelectronic transistors"
Workshop on High Performance Electron Devices for Microwave and Optoelectronic Applications (1997 London, England). 1997 Workshop on High Performance Electron Devices for Microwave and Optoelectronic Applications, EDMO. [New York]: IEEE, 1997.
Знайти повний текст джерелаWorkshop on High Performance Electron Devices for Microwave and Optoelectronic Applications (1993 London, UK). High performance electron devices for microwave and optoelectronic applications, EDMO '93, King's College London, 18th October, 1993: Announcement & programme for workshop. [London]: IEEE, 1993.
Знайти повний текст джерелаWorkshop on High Performance Electron Devices for Microwave and Optoelectronic Applications (1996 University of Leeds). 1996 High Performance Electron Devices for Microwave and Optoelectronic Applications Workshop, EDMO. [New York]: IEEE, 1996.
Знайти повний текст джерелаWorkshop on High Performance Electron Devices for Microwave and Optoelectronic Applications (1995 London, England). 1995 Workshop on High Performance Electron Devices for Microwave and Optoelectronic Applications: EDMO. Piscataway, NJ: IEEE Service Center, 1995.
Знайти повний текст джерелаSimons, Rainee. Optoelectric gain control of a microwave single stage GaAs MESFET amplifier. [Washington, D.C.]: National Aeronautics and Space Administration, 1988.
Знайти повний текст джерелаWorkshop on High Performance Electron Devices for Microwave and Optoelectronic Applications (1996 London, England). 1996 High performance electron devices for microwave and optoelectronic applications workshop: EDMO 96 : [Weetwood Hall, the University of Leeds, 25-26 November 1996]. Piscataway, N.J: IEEE Service Center, 1996.
Знайти повний текст джерелаSiGe heterojunction bipolar transistors. Chichester: Wiley, 2004.
Знайти повний текст джерелаTaiwan de jing tan hao: Tai Ri Han TFT shi ji zhi zheng. Taiabei Shi: Shi bao wen hua chu ban qi ye gu fen you xian gong si, 2004.
Знайти повний текст джерелаAdvanced, Workshop on Frontiers in Electronics (1997 Santa Cruz de Tenerife Spain). 1997 Advanced Workshop on Frontiers in Electronics: WOFE '97 proceedings : Puerto de la Cruz, Tenerife, Spain, 6-11 January 1997. New York: Institute of Electrical and Electronics Engineers, 1997.
Знайти повний текст джерелаIm, Seongil. Photo-Excited Charge Collection Spectroscopy: Probing the traps in field-effect transistors. Dordrecht: Springer Netherlands, 2013.
Знайти повний текст джерелаЧастини книг з теми "Optoelectronic transistors"
Cooper, Donald E., and Steven C. Moss. "Picosecond Optoelectronic Diagnostics of Field Effect Transistors." In Picosecond Electronics and Optoelectronics, 62–65. Berlin, Heidelberg: Springer Berlin Heidelberg, 1985. http://dx.doi.org/10.1007/978-3-642-70780-3_11.
Повний текст джерелаKusmartsev, F. V., W. M. Wu, M. P. Pierpoint, and K. C. Yung. "Application of Graphene Within Optoelectronic Devices and Transistors." In Progress in Optical Science and Photonics, 191–221. Singapore: Springer Singapore, 2014. http://dx.doi.org/10.1007/978-981-287-242-5_9.
Повний текст джерелаLambrechts, Wynand, and Saurabh Sinha. "Frequency Response of Optoelectronic Receivers: The Motivation for Faster Transistors." In Signals and Communication Technology, 167–200. Cham: Springer International Publishing, 2016. http://dx.doi.org/10.1007/978-3-319-47403-8_6.
Повний текст джерелаPrelipceanu, Marius, and Adrian Graur. "Study of New Organic Field Transistors for RFID, Optoelectronic and Mobile Applications." In Lecture Notes in Electrical Engineering, 135–42. Cham: Springer International Publishing, 2014. http://dx.doi.org/10.1007/978-3-319-05440-7_11.
Повний текст джерелаSahri, Nabil, Tadao Nagatsuma, Taiichi Otsuji, Naofumi Shimizu, and Makoto Yaita. "Characterization of > 300 GHz Transistors Using a Novel Optoelectronic Network Analyzer." In Springer Series in Chemical Physics, 194–96. Berlin, Heidelberg: Springer Berlin Heidelberg, 1998. http://dx.doi.org/10.1007/978-3-642-72289-9_58.
Повний текст джерелаAlbrecht, H. "Pin Photodiodes and Field-Effect Transistors for Monolithically Integrated InP/InGaAs Optoelectronic Circuits." In Micro System Technologies 90, 767–72. Berlin, Heidelberg: Springer Berlin Heidelberg, 1990. http://dx.doi.org/10.1007/978-3-642-45678-7_110.
Повний текст джерелаTamura, Hiroyuki. "Theoretical Analysis on Optoelectronic Properties of Organic Materials: Solar Cells and Light-Emitting Transistors." In Progress in Nanophotonics 3, 57–82. Cham: Springer International Publishing, 2014. http://dx.doi.org/10.1007/978-3-319-11602-0_2.
Повний текст джерелаWang, Chengliang, Lang Jiang, and Wenping Hu. "Organic/Polymeric Field-Effect Transistors." In Organic Optoelectronics, 95–170. Weinheim, Germany: Wiley-VCH Verlag GmbH & Co. KGaA, 2013. http://dx.doi.org/10.1002/9783527653454.ch3.
Повний текст джерелаMeng, Qing, Huanli Dong, and Wenping Hu. "Organic/Polymeric Semiconductors for Field-Effect Transistors." In Organic Optoelectronics, 43–94. Weinheim, Germany: Wiley-VCH Verlag GmbH & Co. KGaA, 2013. http://dx.doi.org/10.1002/9783527653454.ch2.
Повний текст джерелаTang, Qinqxin, Yanhong Tong, and Wenping Hu. "Organic Circuits and Organic Single-Molecule Transistors." In Organic Optoelectronics, 171–276. Weinheim, Germany: Wiley-VCH Verlag GmbH & Co. KGaA, 2013. http://dx.doi.org/10.1002/9783527653454.ch4.
Повний текст джерелаТези доповідей конференцій з теми "Optoelectronic transistors"
Cooper, Donald E. "Picosecond Optoelectronic Diagnostics of Field Effect Transistors." In Picosecond Electronics and Optoelectronics. Washington, D.C.: Optica Publishing Group, 1985. http://dx.doi.org/10.1364/peo.1985.thc3.
Повний текст джерелаShur, Michael S., and Mohamed A. Khan. "Optoelectronic GaN-based field effect transistors." In Photonics West '95, edited by Manijeh Razeghi, Yoon-Soo Park, and Gerald L. Witt. SPIE, 1995. http://dx.doi.org/10.1117/12.206879.
Повний текст джерелаSchuermeyer, Fritz. "Optoelectronic pseudomorphic high-electron-mobility transistors." In Photonics West '97, edited by Yoon-Soo Park and Ramu V. Ramaswamy. SPIE, 1997. http://dx.doi.org/10.1117/12.264208.
Повний текст джерелаGrot, Annette, Steven Lin, and Demetri Psaltis. "Optoelectronic neurons using MSM detectors in GaAs." In OSA Annual Meeting. Washington, D.C.: Optica Publishing Group, 1991. http://dx.doi.org/10.1364/oam.1991.mk4.
Повний текст джерелаBryan, Robert P., Jack L. Jewell, Greg R. Olbright, and Winston S. Fu. "Smart pixel optoelectronic interconnects: integrated microlasers/transistors." In OE/LASE'93: Optics, Electro-Optics, & Laser Applications in Science& Engineering, edited by Ray T. Chen. SPIE, 1993. http://dx.doi.org/10.1117/12.147100.
Повний текст джерелаPavuna, Davor. "Applications of HTSC Films in Hybrid Optoelectronic Devices." In Progress in High-Temperature Superconducting Transistors and Other Devices II. SPIE, 1992. http://dx.doi.org/10.1117/12.2321825.
Повний текст джерелаSkogman, R. A. "Atomic layer epitaxy of YBaCuO for optoelectronic applications." In Progress in High-Temperature Superconducting Transistors and Other Devices II. SPIE, 1992. http://dx.doi.org/10.1117/12.2321837.
Повний текст джерелаLin, Steven, and Demetri Psaltis. "GaAs optoelectronic neurons." In OSA Annual Meeting. Washington, D.C.: Optica Publishing Group, 1991. http://dx.doi.org/10.1364/oam.1991.mk1.
Повний текст джерелаKang, Youn-Seon, Bo Xiao, Ya I. Alivov, Qian Fan, Jinqiao Xie, and Hadis Morko. "Ferroelectric PZT/AlGaN/GaN field effect transistors." In Integrated Optoelectronic Devices 2006, edited by Cole W. Litton, James G. Grote, Hadis Morkoc, and Anupam Madhukar. SPIE, 2006. http://dx.doi.org/10.1117/12.657584.
Повний текст джерелаHsieh, Chi-Ti, Pi-Ju Cheng, Chih-Hsien Lin, and Shu-Wei Chang. "Carrier lifetime of heavily p-doped base in light-emitting transistors and transistor lasers." In Physics and Simulation of Optoelectronic Devices XXVII, edited by Marek Osiński, Yasuhiko Arakawa, and Bernd Witzigmann. SPIE, 2019. http://dx.doi.org/10.1117/12.2508189.
Повний текст джерелаЗвіти організацій з теми "Optoelectronic transistors"
Cooper, Donald E., and Steven C. Moss. Picosecond Optoelectronic Diagnostics of Field Effect Transistors,. Fort Belvoir, VA: Defense Technical Information Center, June 1986. http://dx.doi.org/10.21236/ada170503.
Повний текст джерелаCooper, Donald E., and Steven C. Moss. Picosecond Optoelectronic Measurement of the High Frequency Scattering Parameters of a GaAs FET (Field Effect Transistor). Fort Belvoir, VA: Defense Technical Information Center, June 1986. http://dx.doi.org/10.21236/ada170618.
Повний текст джерела