Готові списки джерел за темами / OPTOELECTRONIC DEVICE APPLICATIONS

Зміст

  1. Статті в журналах
  2. Дисертації
  3. Книги
  4. Частини книг
  5. Тези доповідей конференцій
  6. Звіти організацій

Добірка наукової літератури з теми "OPTOELECTRONIC DEVICE APPLICATIONS"

Автор: Grafiati
Опубліковано: 11 вересня 2023

Оформте джерело за APA, MLA, Chicago, Harvard та іншими стилями

Оберіть тип джерела:

Ознайомтеся зі списками актуальних статей, книг, дисертацій, тез та інших наукових джерел на тему "OPTOELECTRONIC DEVICE APPLICATIONS".

Біля кожної праці в переліку літератури доступна кнопка «Додати до бібліографії». Скористайтеся нею – і ми автоматично оформимо бібліографічне посилання на обрану працю в потрібному вам стилі цитування: APA, MLA, «Гарвард», «Чикаго», «Ванкувер» тощо.

Також ви можете завантажити повний текст наукової публікації у форматі «.pdf» та прочитати онлайн анотацію до роботи, якщо відповідні параметри наявні в метаданих.

Статті в журналах з теми "OPTOELECTRONIC DEVICE APPLICATIONS"

1

Sang, Xianhe, Yongfu Wang, Qinglin Wang, Liangrui Zou, Shunhao Ge, Yu Yao, Xueting Wang, Jianchao Fan, and Dandan Sang. "A Review on Optoelectronical Properties of Non-Metal Oxide/Diamond-Based p-n Heterojunction." Molecules 28, no. 3 (January 30, 2023): 1334. http://dx.doi.org/10.3390/molecules28031334.

Повний текст джерела
Анотація:
Diamond holds promise for optoelectronic devices working in high-frequency, high-power and high-temperature environments, for example in some aspect of nuclear energetics industry processing and aerospace due to its wide bandgap (5.5 eV), ultimate thermal conductivity, high-pressure resistance, high radio frequency and high chemical stability. In the last several years, p-type B-doped diamond (BDD) has been fabricated to heterojunctions with all kinds of non-metal oxide (AlN, GaN, Si and carbon-based semiconductors) to form heterojunctions, which may be widely utilized in various optoelectronic device technology. This article discusses the application of diamond-based heterostructures and mainly writes about optoelectronic device fabrication, optoelectronic performance research, LEDs, photodetectors, and high-electron mobility transistor (HEMT) device applications based on diamond non-metal oxide (AlN, GaN, Si and carbon-based semiconductor) heterojunction. The discussion in this paper will provide a new scheme for the improvement of high-temperature diamond-based optoelectronics.
Стилі APA, Harvard, Vancouver, ISO та ін.
2

Gao, Q., H. J. Joyce, S. Paiman, J. H. Kang, H. H. Tan, Y. Kim, L. M. Smith, et al. "Nanowires for optoelectronic device applications." physica status solidi (c) 6, no. 12 (December 2009): 2678–82. http://dx.doi.org/10.1002/pssc.200982528.

Повний текст джерела
Стилі APA, Harvard, Vancouver, ISO та ін.
3

Heutz, Sandrine, Paul Sullivan, Brett M. Sanderson, Stephan M. Schultes, and Tim S. Jones. "Molecular Thin Films for Optoelectronic Applications." Solid State Phenomena 121-123 (March 2007): 373–76. http://dx.doi.org/10.4028/www.scientific.net/ssp.121-123.373.

Повний текст джерела
Анотація:
Organic molecular beam deposition (OMBD) is used for co-evaporation of copper phthalocyanine (CuPc) and C60 to form mixed films. Although pure single layers are crystalline, mixing leads to amorphous films in most cases, although phase segregation occurs for high concentrations of C60. An underlying CuPc single layer suppresses the segregation and leads to a homogeneous CuPc/C60 mixed film for all layer compositions. These effects are exploited in photovoltaic (PV) devices, where new architectures to improve device performance are investigated. Mixing the CuPc and C60 improves device performance, with the maximum efficiency (ηp = 1.17%) reached for devices containing 75% CuPc in the mixed layer, surrounded by pure layers at the electrode interfaces.
Стилі APA, Harvard, Vancouver, ISO та ін.
4

Li, Ziwei, Boyi Xu, Delang Liang, and Anlian Pan. "Polarization-Dependent Optical Properties and Optoelectronic Devices of 2D Materials." Research 2020 (August 29, 2020): 1–35. http://dx.doi.org/10.34133/2020/5464258.

Повний текст джерела
Анотація:
The development of optoelectronic devices requires breakthroughs in new material systems and novel device mechanisms, and the demand recently changes from the detection of signal intensity and responsivity to the exploration of sensitivity of polarized state information. Two-dimensional (2D) materials are a rich family exhibiting diverse physical and electronic properties for polarization device applications, including anisotropic materials, valleytronic materials, and other hybrid heterostructures. In this review, we first review the polarized-light-dependent physical mechanism in 2D materials, then present detailed descriptions in optical and optoelectronic properties, involving Raman shift, optical absorption, and light emission and functional optoelectronic devices. Finally, a comment is made on future developments and challenges. The plethora of 2D materials and their heterostructures offers the promise of polarization-dependent scientific discovery and optoelectronic device application.
Стилі APA, Harvard, Vancouver, ISO та ін.
5

Jeon, Jaeho, Yajie Yang, Haeju Choi, Jin-Hong Park, Byoung Hun Lee, and Sungjoo Lee. "MXenes for future nanophotonic device applications." Nanophotonics 9, no. 7 (May 13, 2020): 1831–53. http://dx.doi.org/10.1515/nanoph-2020-0060.

Повний текст джерела
Анотація:
AbstractTwo-dimensional (2D) layers of transition metal carbides, nitrides, or carbonitrides, collectively referred to as MXenes, are considered as the new family of 2D materials for the development of functional building blocks for optoelectronic and photonic device applications. Their advantages are based on their unique and tunable electronic and optical properties, which depend on the modulation of transition metal elements or surface functional groups. In this paper, we have presented a comprehensive review of MXenes to suggest an insightful perspective on future nanophotonic and optoelectronic device applications based on advanced synthesis processes and theoretically predicted or experimentally verified material properties. Recently developed optoelectronic and photonic devices, such as photodetectors, solar cells, fiber lasers, and light-emitting diodes are summarized in this review. Wide-spectrum photodetection with high photoresponsivity, high-yield solar cells, and effective saturable absorption were achieved by exploiting different MXenes. Further, the great potential of MXenes as an electrode material is predicted with a controllable work function in a wide range (1.6–8 eV) and high conductivity (~104 S/cm), and their potential as active channel material by generating a tunable energy bandgap is likewise shown. MXene can provide new functional building blocks for future generation nanophotonic device applications.
Стилі APA, Harvard, Vancouver, ISO та ін.
6

Xu, Wangqiong, Ying Lu, Weibin Lei, Fengrui Sui, Ruru Ma, Ruijuan Qi, and Rong Huang. "FIB-Assisted Fabrication of Single Tellurium Nanotube Based High Performance Photodetector." Micromachines 13, no. 1 (December 22, 2021): 11. http://dx.doi.org/10.3390/mi13010011.

Повний текст джерела
Анотація:
Nanoscale tellurium (Te) materials are promising for advanced optoelectronics owing to their outstanding photoelectrical properties. In this work, high-performance optoelectronic nanodevice based on a single tellurium nanotube (NT) was prepared by focused ion beam (FIB)-assisted technique. The individual Te NT photodetector demonstrates a high photoresponsivity of 1.65 × 104 AW−1 and a high photoconductivity gain of 5.0 × 106%, which shows great promise for further optoelectronic device applications.
Стилі APA, Harvard, Vancouver, ISO та ін.
7

Jamal-Eddine, Zane, Yuewei Zhang, and Siddharth Rajan. "Recent Progress in III-Nitride Tunnel Junction-Based Optoelectronics." International Journal of High Speed Electronics and Systems 28, no. 01n02 (March 2019): 1940012. http://dx.doi.org/10.1142/s0129156419400123.

Повний текст джерела
Анотація:
Tunnel junctions have garnered much interest from the III-Nitride optoelectronic research community within recent years. Tunnel junctions have seen applications in several material systems with relatively narrow bandgaps as compared to the III-Nitrides. Although they were initially dismissed as ineffective for commercial device applications due to high voltage penalty and on resistance owed to the wide bandgap nature of the III-Nitride material systems, recent development in the field has warranted further study of such tunnel junction enabled devices. They are of particular interest for applications in III-Nitride optoelectronic devices in which they can be used to enable novel device designs which could potentially address some of the most challenging physical obstacles presented with this unique material system. In this work we review the recent progress made on the study of III-Nitride tunnel junction-based optoelectronic devices and the challenges which are still faced in the field of study today.
Стилі APA, Harvard, Vancouver, ISO та ін.
8

Vazhdaev, Konstantin, Marat Urakseev, Azamat Allaberdin, and Kostantin Subkhankulov. "OPTOELECTRONIC DEVICES BASED ON DIFFRACTION GRATINGS FROM STANDING ELASTIC WAVES." Electrical and data processing facilities and systems 18, no. 3-4 (2022): 151–58. http://dx.doi.org/10.17122/1999-5458-2022-18-3-4-151-158.

Повний текст джерела
Анотація:
Relevance Currently, optoelectronic devices based on diffraction gratings from standing elastic waves are widely used. This is due to the fact that such devices are small in size, allow realtime measurements and have high accuracy, speed and reliability. A review of foreign patents and scientific and technical literature shows that in Japan, the USA, Germany and other countries, intensive work has been carried out in recent years to create optoelectronic devices as part of information-measuring systems based on the use of diffraction gratings from standing elastic waves. Such work is also carried out in Russia. Today, optoelectronic devices are widely used in various fields of industry, medicine, ecology, etc. Aim of research It is necessary to investigate the prospects of research on the development of optoelectronic devices based on diffraction gratings from standing elastic waves. It is necessary to consider the physics of processes in the field of acousto-optic interactions. It is important to give the main characteristics and possible applications of optoelectronic devices based on diffraction gratings from standing elastic waves. Research objects Light and sound waves interacting with each other when they pass through the same medium, diffraction grating, optoelectronic device. Research methods Mathematical methods of calculation and analysis. Results The need for research in the field of optoelectronic devices based on diffraction gratings from standing elastic waves is formulated. It is shown that when passing through the same medium, light and sound waves interact with each other. Light is scattered on a sound wave, as on a diffraction grating. Recommendations for the design of optoelectronic devices based on diffraction gratings from standing elastic waves are proposed. Possible areas of application of optoelectronic devices based on diffraction gratings from standing elastic waves are considered. Keywords: acousto-optics, waves, modulator, diffraction grating, optoelectronic device
Стилі APA, Harvard, Vancouver, ISO та ін.
9

Heydari Gharahcheshmeh, Meysam, and Karen K. Gleason. "Recent Progress in Conjugated Conducting and Semiconducting Polymers for Energy Devices." Energies 15, no. 10 (May 17, 2022): 3661. http://dx.doi.org/10.3390/en15103661.

Повний текст джерела
Анотація:
Advanced conductors (such as conducting and semiconducting polymers) are vital building blocks for modern technologies and biocompatible devices as faster computing and smaller device sizes are demanded. Conjugated conducting and semiconducting polymers (including poly(3,4-ethylenedioxythiophene) (PEDOT), polyaniline (PANI), polythiophene (PTh), and polypyrrole (PPy)) provide the mechanical flexibility required for the next generation of energy and electronic devices. Electrical conductivity, ionic conductivity, and optoelectronic characteristics of advanced conductors are governed by their texture and constituent nanostructures. Thus, precise textural and nanostructural engineering of advanced conjugated conducting and semiconducting polymers provide an outstanding pathway to facilitate their adoption in various technological applications, including but not limited to energy storage and harvesting devices, flexible optoelectronics, bio-functional materials, and wearable electronics. This review article focuses on the basic interconnection among the nanostructure and the characteristics of conjugated conducting and semiconducting polymers. In addition, the application of conjugated conducting and semiconducting polymers in flexible energy devices and the resulting state-of-the-art device performance will be covered.
Стилі APA, Harvard, Vancouver, ISO та ін.
10

Xu, Heng Rui, and Ping Liu. "Patterning Method for Nanowire Transparent Conductive Films." Materials Science Forum 1036 (June 29, 2021): 66–76. http://dx.doi.org/10.4028/www.scientific.net/msf.1036.66.

Повний текст джерела
Анотація:
With the development of flexible optoelectronic devices, transparent conductive films (TCFs) based on nanowires provide wide concern. The low preparation cost and high-efficiency assembly characteristics make them occupy a very important position in scientific research and industrial application. In practical applications, TCFs in optoelectronic devices often do not need to cover the whole device, but only need to be prepared in part areas. At this time, patterned TCFs need to be prepared. In this paper, four kinds of patterning methods of TCFs are introduced, and the advantages and disadvantages of each method are analyzed.
Стилі APA, Harvard, Vancouver, ISO та ін.
Більше джерел

Дисертації з теми "OPTOELECTRONIC DEVICE APPLICATIONS"

1

Guptah, Vinod Kumar. "Growth on patterned substrates for optoelectronic device applications." Thesis, University College London (University of London), 1998. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.267027.

Повний текст джерела
Стилі APA, Harvard, Vancouver, ISO та ін.
2

Alexandropoulos, Dimitrios. "Theoretical studies of GaInNAs for optoelectronic device applications." Thesis, University of Essex, 2003. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.274313.

Повний текст джерела
Стилі APA, Harvard, Vancouver, ISO та ін.
3

Pratt, Andrew Richard. "Control of indium migration on patterned substrates for optoelectronic device applications." Thesis, Imperial College London, 1995. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.307775.

Повний текст джерела
Стилі APA, Harvard, Vancouver, ISO та ін.
4

Grudowski, Paul A. "The metalorganic chemical vapor deposition of III-V nitrides for optoelectronic device applications /." Digital version accessible at:, 1998. http://wwwlib.umi.com/cr/utexas/main.

Повний текст джерела
Стилі APA, Harvard, Vancouver, ISO та ін.
5

Xin, Huoping. "Gas-source molecular beam epitaxy of GaInNAs and Ga(In)NP for electronic and optoelectronic device applications /." Diss., Connect to a 24 p. preview or request complete full text in PDF format. Access restricted to UC campuses, 2000. http://wwwlib.umi.com/cr/ucsd/fullcit?p9970681.

Повний текст джерела
Стилі APA, Harvard, Vancouver, ISO та ін.
6

Kim, Danny. "Dry passivation studies of GaAs(110) surfaces by Gallium Oxide thin films deposited by electron cyclotron resonance plasma reactive molecular beam epitaxy for optoelectronic device applications." Thesis, National Library of Canada = Bibliothèque nationale du Canada, 2001. http://www.collectionscanada.ca/obj/s4/f2/dsk3/ftp05/MQ63140.pdf.

Повний текст джерела
Стилі APA, Harvard, Vancouver, ISO та ін.
7

Cheung, Chor-keung. "The construction of a focused low energy positron beam facility and its application in the study of various optoelectronic materials." View the Table of Contents & Abstract, 2006. http://sunzi.lib.hku.hk/hkuto/record/B36995770.

Повний текст джерела
Стилі APA, Harvard, Vancouver, ISO та ін.
8

Cheung, Chor-keung, and 張初強. "The construction of a focused low energy positron beam facility and its application in the study of various optoelectronic materials." Thesis, The University of Hong Kong (Pokfulam, Hong Kong), 2006. http://hub.hku.hk/bib/B37434925.

Повний текст джерела
Стилі APA, Harvard, Vancouver, ISO та ін.
9

Li, Cheng. "Metal oxide films for optoelectronic device application." Thesis, University of Cambridge, 2014. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.648598.

Повний текст джерела
Стилі APA, Harvard, Vancouver, ISO та ін.
10

Davis, Nathaniel J. L. K. "Applications of spectral management in optoelectronic devices." Thesis, University of Cambridge, 2017. https://www.repository.cam.ac.uk/handle/1810/263670.

Повний текст джерела
Анотація:
The application and efficiency of optoelectronic devices depends on the ability to control the absorption and emission processes of photons in semiconductors. This thesis looks at three different applications of spectral management across a broad range of optoelectronic devices: photovoltaics (PVs), luminescent solar concentrators (LSCs) and light-emitting diodes (LEDs). Multiple excitation generation (MEG) – a process in which multiple charge-carrier pairs are generated from a single optical excitation - is a promising way to improve the photocurrent in photovoltaic devices and offers the potential to break the Shockley-Queisser limit. Here we present solar cells fabricated from PbSe nanorods which show external quantum efficiencies exceeding 100 %. This demonstrates the potential for substantial improvements in PV device performance due to MEG. Through spatial and spectral concentration, LSCs have the potential to reduce the cost of photovoltaic energy production and are attractive prospects for photobioreactors and building-integrated applications. Here we introduce versatile star-shaped donor-acceptor molecules based on a central BODIPY acceptor with oligofluorene donor side units. We perform comprehensive device measurements and Monte Carlo ray tracing simulations of LSCs. We find that the measured structures permit waveguide propagation lengths on a par with state-of-the-art nanocrystalline emitters, while proposed hypothetical structures can be seen as viable candidates for photobioreactor and energy production roles and should be synthesized. The efficiency of nanocrystal-based LEDs is inherently limited by the types of crystals used. Cesium lead halide perovskite nanocrystals exhibit photoluminescence quantum efficiencies approaching 100%. However, due to the large surface areas and anion mobility halogen exchange between perovskite nanocrystals of different compositions occurs rapidly, limiting applications. Here, we report significantly reduced halide exchange between chloride and iodide CsPbX3 (X= Cl, I) perovskite nanocrystals. We investigate perovskite-based multi-crystal component samples and their resulting optical and electrical interactions in bulk heterojunction LEDs. Efficient photon reabsorption from CsPbCl3 to CsPbI3 nanocrystals was found to improve LED device performance.
Стилі APA, Harvard, Vancouver, ISO та ін.
Більше джерел

Книги з теми "OPTOELECTRONIC DEVICE APPLICATIONS"

1

M, Razeghi, Society of Photo-optical Instrumentation Engineers., Europtica Services I. C, American Physical Society, and International Conference on Physical Concepts of Materials for Novel Optoelectronic Device Applications (1990 : Aachen, Germany), eds. Physical concepts of materials for novel optoelectronic device applications II: Device physics and applications : 28 October-2 November 1990, Aachen, Federal Republic of Germany. Bellingham, Wash., USA: SPIE, 1991.

Знайти повний текст джерела
Стилі APA, Harvard, Vancouver, ISO та ін.
2

Litton, Cole W., Donald C. Reynolds, and Thomas C. Collins, eds. Zinc Oxide Materials for Electronic and Optoelectronic Device Applications. Chichester, UK: John Wiley & Sons, Ltd, 2011. http://dx.doi.org/10.1002/9781119991038.

Повний текст джерела
Стилі APA, Harvard, Vancouver, ISO та ін.
3

Litton, Cole W. Zinc oxide materials for electronic and optoelectronic device applications. Chichester: Wiley, 2011.

Знайти повний текст джерела
Стилі APA, Harvard, Vancouver, ISO та ін.
4

Fabio, Beltram, Gornik E, European Optical Society, International Centre for Science and High Technology., and Society of Photo-optical Instrumentation Engineers., eds. Physical concepts and materials for novel optoelectronic device applications II: International symposium, 24-27 May 1993, Trieste, Italy. Bellingham, Wash., USA: SPIE, 1993.

Знайти повний текст джерела
Стилі APA, Harvard, Vancouver, ISO та ін.
5

M, Razeghi, Society of Photo-optical Instrumentation Engineers., Europtica Services I. C, and American Physical Society, eds. Physical concepts of materials for novel optoelectronic device applications I: Materials growth and characterization : 28 October-2 November 1990, Aachen, Federal Republic of Germany. Bellingham, Wash., USA: SPIE, 1991.

Знайти повний текст джерела
Стилі APA, Harvard, Vancouver, ISO та ін.
6

1948-, Chen David, ed. Semiconductor optoelectronic device manufacturing and applications: 7-9 November 2001, Nanjing, China. Bellingham, Wash., USA: SPIE, 2001.

Знайти повний текст джерела
Стилі APA, Harvard, Vancouver, ISO та ін.
7

Andreas, Ostendorf, Society of Photo-optical Instrumentation Engineers, and European Optical Society, eds. Laser micromachining for optoelectronic device fabrication: 30 October 2002, Brugge, Belgium. Bellingham, Washington: SPIE, 2003.

Знайти повний текст джерела
Стилі APA, Harvard, Vancouver, ISO та ін.
8

Symposium, L. on III-V. Nitrides Semiconductors and Ceramics (1997 Strasbourg France). III-V nitrides, semiconductors, and ceramics: From material growth to device applications : proceedings of Symposium L on III-V Nitrides, Semiconductors, and Ceramics : from material growth to device applications of the 1997 ICAM/E-MRS Spring Conference, Strasbourg, France, June 16-20, 1997. Amsterdam: Elsevier, 1997.

Знайти повний текст джерела
Стилі APA, Harvard, Vancouver, ISO та ін.
9

Sun, I.-Chung Miles. Photoluminescence and optical anisotropy of GaAs/AlGaAs quantum dots for optoelectronic device applications. Ottawa: National Library of Canada, 2002.

Знайти повний текст джерела
Стилі APA, Harvard, Vancouver, ISO та ін.
10

Applied optics fundamentals and device applications: Nano, MOEMS, and biotechnology. Boca Raton, FL: Taylor & Francis, 2011.

Знайти повний текст джерела
Стилі APA, Harvard, Vancouver, ISO та ін.
Більше джерел

Частини книг з теми "OPTOELECTRONIC DEVICE APPLICATIONS"

1

Springholz, G., and G. Bauer. "9.8 Optoelectronic device applications." In Growth and Structuring, 538–40. Berlin, Heidelberg: Springer Berlin Heidelberg, 2013. http://dx.doi.org/10.1007/978-3-540-68357-5_103.

Повний текст джерела
Стилі APA, Harvard, Vancouver, ISO та ін.
2

Li, Chaoyang, Xin Li, and Dapeng Wang. "Fabrication of ZnO Thin Film and Nanostructures for Optoelectronic Device Applications." In Oxide Thin Films, Multilayers, and Nanocomposites, 239–71. Cham: Springer International Publishing, 2015. http://dx.doi.org/10.1007/978-3-319-14478-8_12.

Повний текст джерела
Стилі APA, Harvard, Vancouver, ISO та ін.
3

Collins, T. C., and R. J. Hauenstein. "Fundamental Properties of ZnO." In Zinc Oxide Materials for Electronic and Optoelectronic Device Applications, 1–28. Chichester, UK: John Wiley & Sons, Ltd, 2011. http://dx.doi.org/10.1002/9781119991038.ch1.

Повний текст джерела
Стилі APA, Harvard, Vancouver, ISO та ін.
4

Bagnall, D. M. "Room Temperature Stimulated Emission and ZnO-Based Lasers." In Zinc Oxide Materials for Electronic and Optoelectronic Device Applications, 265–84. Chichester, UK: John Wiley & Sons, Ltd, 2011. http://dx.doi.org/10.1002/9781119991038.ch10.

Повний текст джерела
Стилі APA, Harvard, Vancouver, ISO та ін.
5

Zhong, Jian, and Yicheng Lu. "ZnO-Based Ultraviolet Detectors." In Zinc Oxide Materials for Electronic and Optoelectronic Device Applications, 285–329. Chichester, UK: John Wiley & Sons, Ltd, 2011. http://dx.doi.org/10.1002/9781119991038.ch11.

Повний текст джерела
Стилі APA, Harvard, Vancouver, ISO та ін.
6

Makino, Takayuki, Yusaburo Segawa, Masashi Kawasaki, and Hideomi Koinuma. "Room-Temperature Stimulated Emission from ZnO Multiple Quantum Wells Grown on Lattice-Matched Substrates." In Zinc Oxide Materials for Electronic and Optoelectronic Device Applications, 331–49. Chichester, UK: John Wiley & Sons, Ltd, 2011. http://dx.doi.org/10.1002/9781119991038.ch12.

Повний текст джерела
Стилі APA, Harvard, Vancouver, ISO та ін.
7

Reynolds, D. C., C. W. Litton, and T. C. Collins. "Optical Properties of ZnO." In Zinc Oxide Materials for Electronic and Optoelectronic Device Applications, 29–60. Chichester, UK: John Wiley & Sons, Ltd, 2011. http://dx.doi.org/10.1002/9781119991038.ch2.

Повний текст джерела
Стилі APA, Harvard, Vancouver, ISO та ін.
8

Claflin, B., and D. C. Look. "Electrical Transport Properties in Zinc Oxide." In Zinc Oxide Materials for Electronic and Optoelectronic Device Applications, 61–86. Chichester, UK: John Wiley & Sons, Ltd, 2011. http://dx.doi.org/10.1002/9781119991038.ch3.

Повний текст джерела
Стилі APA, Harvard, Vancouver, ISO та ін.
9

Brillson, Leonard J. "ZnO Surface Properties and Schottky Contacts." In Zinc Oxide Materials for Electronic and Optoelectronic Device Applications, 87–112. Chichester, UK: John Wiley & Sons, Ltd, 2011. http://dx.doi.org/10.1002/9781119991038.ch4.

Повний текст джерела
Стилі APA, Harvard, Vancouver, ISO та ін.
10

Janotti, Anderson, and Chris G. Van de Walle. "Native Point Defects and Doping in ZnO." In Zinc Oxide Materials for Electronic and Optoelectronic Device Applications, 113–34. Chichester, UK: John Wiley & Sons, Ltd, 2011. http://dx.doi.org/10.1002/9781119991038.ch5.

Повний текст джерела
Стилі APA, Harvard, Vancouver, ISO та ін.

Тези доповідей конференцій з теми "OPTOELECTRONIC DEVICE APPLICATIONS"

1

Tidrow, Meimei Z., William A. Beck, William W. Clark III, Herbert K. Pollehn, John W. Little, Nibir K. Dhar, Richard P. Leavitt, et al. "Device physics and focal plane array applications of QWIP and MCT." In Optoelectronics '99 - Integrated Optoelectronic Devices, edited by Gail J. Brown and Manijeh Razeghi. SPIE, 1999. http://dx.doi.org/10.1117/12.344591.

Повний текст джерела
Стилі APA, Harvard, Vancouver, ISO та ін.
2

Dohler, Gottfried H. "Optoelectronic Device Applications Of Doping Superlattices." In 1987 Symposium on the Technologies for Optoelectronics, edited by Alfred R. Adams. SPIE, 1988. http://dx.doi.org/10.1117/12.943403.

Повний текст джерела
Стилі APA, Harvard, Vancouver, ISO та ін.
3

Yu, Jae Su, Jung Woo Leem, Yeong Hwan Ko, and Hee Kwan Lee. "Semiconductor nanostructures towards optoelectronic device applications." In SPIE OPTO, edited by Manijeh Razeghi, Eric Tournie, and Gail J. Brown. SPIE, 2012. http://dx.doi.org/10.1117/12.907968.

Повний текст джерела
Стилі APA, Harvard, Vancouver, ISO та ін.
4

Jen, Alex K. Y., Hong Ma, Xiaoming Wu, Jianyao Wu, Sen Liu, Seth R. Marder, Larry R. Dalton, and Ching-Fong Shu. "Recent development of highly efficient chromophores and polymers for electro-optic device applications." In Optoelectronics '99 - Integrated Optoelectronic Devices, edited by Bernard Kippelen. SPIE, 1999. http://dx.doi.org/10.1117/12.348388.

Повний текст джерела
Стилі APA, Harvard, Vancouver, ISO та ін.
5

Bawendi, Moungi. "Nanocrystals for thin film optoelectronic device applications." In LEOS 2008 - 21st Annual Meeting of the IEEE Lasers and Electro-Optics Society (LEOS 2008). IEEE, 2008. http://dx.doi.org/10.1109/leos.2008.4688712.

Повний текст джерела
Стилі APA, Harvard, Vancouver, ISO та ін.
6

Brongersma, Mark L. "Optoelectronic device applications of metafilms (Conference Presentation)." In Metamaterials, Metadevices, and Metasystems 2017, edited by Nader Engheta, Mikhail A. Noginov, and Nikolay I. Zheludev. SPIE, 2017. http://dx.doi.org/10.1117/12.2276207.

Повний текст джерела
Стилі APA, Harvard, Vancouver, ISO та ін.
7

Gao, Q., H. Joyce, S. Paiman, J. H. Kang, H. H. Tan, H. E. Jackson, L. M. Smith, J. M. Yarrison-Rice, Jin Zou, and C. Jagadish. "Compound semiconductor nanowires for optoelectronic device applications." In 2011 ICO International Conference on Information Photonics (IP). IEEE, 2011. http://dx.doi.org/10.1109/ico-ip.2011.5953760.

Повний текст джерела
Стилі APA, Harvard, Vancouver, ISO та ін.
8

YAMAGUCHI, K. "Optoelectronic integrated circuit device technology and applications." In Optical Fiber Communication Conference. Washington, D.C.: OSA, 1988. http://dx.doi.org/10.1364/ofc.1988.wf1.

Повний текст джерела
Стилі APA, Harvard, Vancouver, ISO та ін.
9

Fischer, I. A., F. Oliveira, A. Benedetti, S. Chiussi, and J. Schulze. "(Si)GeSn nanostructures for optoelectronic device applications." In 2016 39th International Convention on Information and Communication Technology, Electronics and Microelectronics (MIPRO). IEEE, 2016. http://dx.doi.org/10.1109/mipro.2016.7522099.

Повний текст джерела
Стилі APA, Harvard, Vancouver, ISO та ін.
10

Gan, Yi, Jun Zhang, Shan Jiang, Xiaodong Huang, Ning Zhou, and Ligang Deng. "Applications of ICP in optoelectronic device fabrication." In Asia-Pacific Optical Communications, edited by Chung-En Zah, Yi Luo, and Shinji Tsuji. SPIE, 2005. http://dx.doi.org/10.1117/12.575729.

Повний текст джерела
Стилі APA, Harvard, Vancouver, ISO та ін.

Звіти організацій з теми "OPTOELECTRONIC DEVICE APPLICATIONS"

1

Spahn, Olga B., Andrew A. Allerman, Kent D. Choquette, Gregory A. Vawter, John F. Klem, Charles T. Sullivan, John P. Sullivan, et al. Selective Oxidation Technology and its Applications Toward Electronic and Optoelectronic Devices. Office of Scientific and Technical Information (OSTI), July 1999. http://dx.doi.org/10.2172/9462.

Повний текст джерела
Стилі APA, Harvard, Vancouver, ISO та ін.
2

BACA, ALBERT G., RONALD D. BRIGGS, ANDREW A. ALLERMAN, CHRISTINE C. MITCHELL, ARTHUR J. FISCHER, CAROL I. ASHBY, ALAN F. WRIGHT, and RANDY J. SHUL. High Al-Content AlInGaN Devices for Next Generation Electronic and Optoelectronic Applications. Office of Scientific and Technical Information (OSTI), December 2001. http://dx.doi.org/10.2172/789599.

Повний текст джерела
Стилі APA, Harvard, Vancouver, ISO та ін.
3

Osgood, Richard M., and Jr. Selective Processing Techniques for Electronic and Optoelectronic Applications: Quantum-Well Devices and Integrated Optic Circuits. Fort Belvoir, VA: Defense Technical Information Center, September 1999. http://dx.doi.org/10.21236/ada369792.

Повний текст джерела
Стилі APA, Harvard, Vancouver, ISO та ін.
Також вас можуть зацікавити розширені добірки на тему "OPTOELECTRONIC DEVICE APPLICATIONS" для конкретних типів джерел:
Статті в журналах Дисертації Книги
Ми пропонуємо знижки на всі преміум-плани для авторів, чиї праці увійшли до тематичних добірок літератури. Зв'яжіться з нами, щоб отримати унікальний промокод!

До бібліографії