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Статті в журналах з теми "Nitrides of the III group"
Christen, Jürgen, and Bernard Gil. "Group III Nitrides." physica status solidi (c) 11, no. 2 (February 2014): 238. http://dx.doi.org/10.1002/pssc.201470041.
Повний текст джерелаHenini, M. "Properties group III nitrides." III-Vs Review 8, no. 2 (April 1995): 67. http://dx.doi.org/10.1016/0961-1290(95)80114-6.
Повний текст джерелаPloog, Klaus H., and Oliver Brandt. "Doping of group III nitrides." Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films 16, no. 3 (May 1998): 1609–14. http://dx.doi.org/10.1116/1.581128.
Повний текст джерелаSzweda, Roy. "Properties of group III nitrides." III-Vs Review 10, no. 4 (July 1997): 54. http://dx.doi.org/10.1016/0961-1290(97)90252-0.
Повний текст джерелаHenini, M. "Properties of Group III nitrides." Microelectronics Journal 26, no. 2-3 (March 1995): xxix—xxx. http://dx.doi.org/10.1016/0026-2692(95)90023-3.
Повний текст джерелаCostales, Aurora, Miguel A. Blanco, Ángel Martín Pendás, Anil K. Kandalam, and Ravindra Pandey. "Chemical Bonding in Group III Nitrides." Journal of the American Chemical Society 124, no. 15 (April 2002): 4116–23. http://dx.doi.org/10.1021/ja017380o.
Повний текст джерелаSussek, Harald, Oliver Stark, Anjana Devi, Hans Pritzkow, and Roland A. Fischer. "Precursor chemistry of Group III nitrides." Journal of Organometallic Chemistry 602, no. 1-2 (May 2000): 29–36. http://dx.doi.org/10.1016/s0022-328x(00)00114-5.
Повний текст джерелаWang, Liangbiao, Yanxia Pan, Qianli Shen, Junhao Zhang, Keyan Bao, Zhengsong Lou, Dejian Zhao, and Quanfa Zhou. "Sulfur-assisted synthesis of indium nitride nanoplates from indium oxide." RSC Advances 6, no. 100 (2016): 98153–56. http://dx.doi.org/10.1039/c6ra22471g.
Повний текст джерелаChandrasekhar, D., D. J. Smith, S. Strite, M. E. Lin, and H. Morkoc. "Characterization of group Ill-nitrides by high-resolution electron microscopy." Proceedings, annual meeting, Electron Microscopy Society of America 52 (1994): 846–47. http://dx.doi.org/10.1017/s0424820100171961.
Повний текст джерелаGavrilenko, V. I., and R. Q. Wu. "Energy loss spectra of group III nitrides." Applied Physics Letters 77, no. 19 (November 6, 2000): 3042–44. http://dx.doi.org/10.1063/1.1323992.
Повний текст джерелаДисертації з теми "Nitrides of the III group"
Kucheyev, Sergei Olegovich. "Ion-beam processes in group-III nitrides." View thesis entry in Australian Digital Theses Program, 2002. http://thesis.anu.edu.au/public/adt-ANU20030211.170915/index.html.
Повний текст джерелаKucheyev, Sergei Olegovich, and kucheyev1@llnl gov. "Ion-beam processes in group-III nitrides." The Australian National University. Research School of Physical Sciences and Engineering, 2002. http://thesis.anu.edu.au./public/adt-ANU20030211.170915.
Повний текст джерелаKraeusel, Simon. "Native defects in the group III nitrides." Thesis, University of Strathclyde, 2013. http://oleg.lib.strath.ac.uk:80/R/?func=dbin-jump-full&object_id=19541.
Повний текст джерелаJeffs, Nicholas James. "Growth and structural characterisation of group III nitrides." Thesis, University of Nottingham, 2000. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.311764.
Повний текст джерелаSteinhoff, Georg. "Group III-nitrides for bio- and electrochemical sensors." kostenfrei, 2008. http://mediatum2.ub.tum.de/doc/646548/646548.pdf.
Повний текст джерелаSeetoh, Ian Peiyuan. "Commercialization of group III nitrides-on-silicon technologies." Thesis, Massachusetts Institute of Technology, 2010. https://hdl.handle.net/1721.1/122862.
Повний текст джерелаCataloged from PDF version of thesis.
Includes bibliographical references (pages 35-39).
While group Ill nitride materials have been commercialized for many years, there is recent interest in growing these materials on silicon substrates as a cost effective alternative to more expensive sapphire and silicon carbide technologies. Therefore, it is necessary to determine how group Ill nitride-on-silicon technologies can be positioned in way for them to be effective in their respective applications, thereby enabling their commercialization. This thesis is a systematic evaluation of the epitaxial growth on silicon carbide, sapphire and silicon substrates, focusing on their lattice-mismatches, thermal expansion mismatches, and thermal conductivity. The subsequent analysis of important commercial applications determined that GaN-on-Si technology is ready for commercialization in the near future. These applications include the InGaN/GaN white light emitting diode and the blue laser diode, as well as the AIGaN/GaN high electron mobility transistor, each with its own unique requirements for the technology and the implementation. It was recommended that start-up firms interested in commercializing GaN-on- Si technology focus on the growth of GaN on silicon substrates and engage device manufacturers proactively. InN and In-rich nitrides can complement maturing GaN and Ga-rich nitrides technologies, resulting in new applications and products in future. While the growth of InN films is currently very challenging, it is believed that the experience and revenue obtained from the commercialization of GaN-on-Si technology can benefit InN-on-Si technology, speeding up the latter's commercialization. A brief business strategy aimed at translating the findings into a feasible approach for commercialization is also provided.
by Ian Peiyuan Seetoh.
M. Eng.
M.Eng. Massachusetts Institute of Technology, Department of Materials Science and Engineering
Kench, P. J. "Microstructures of group III-nitrides after implantation with gallium." Thesis, University of Surrey, 2001. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.343459.
Повний текст джерелаBöttcher, Tim. "Heteroepitaxy of group-III nitrides for the application in laser diodes." [S.l.] : [s.n.], 2002. http://deposit.ddb.de/cgi-bin/dokserv?idn=965575160.
Повний текст джерелаMudie, Stephen. "Characterisation of Group III nitrides using hard X-ray synchrotron radiation." Monash University, School of Physics and Materials Engineering, 2004. http://arrow.monash.edu.au/hdl/1959.1/9729.
Повний текст джерелаKhanderi, Jayaprakash. "Group-III Nitrides contribution to precusor chemistry, MOCVD, nanostructures and multiscale simulation studies /." [S.l.] : [s.n.], 2006. http://deposit.ddb.de/cgi-bin/dokserv?idn=979863538.
Повний текст джерелаКниги з теми "Nitrides of the III group"
Bayerl, Martin W. Magnetic resonance investigatons of group III-nitrides. München: Walter-Schottky-Inst., 2000.
Знайти повний текст джерелаRussell, D. The preparation and characterisation of gallium nitride and group III-V related compounds. Leicester: De Montfort University, 2003.
Знайти повний текст джерелаRazeghi, M. Optoelectronic devices: III-nitrides. Amsterdam: Elsevier, 2004.
Знайти повний текст джерелаLi, Jinmin, Junxi Wang, Xiaoyan Yi, Zhiqiang Liu, Tongbo Wei, Jianchang Yan, and Bin Xue. III-Nitrides Light Emitting Diodes: Technology and Applications. Singapore: Springer Singapore, 2020. http://dx.doi.org/10.1007/978-981-15-7949-3.
Повний текст джерелаRare earth doped III-nitrides for optoelectronic and spintronic applications. Dordrecht, the Netherlands: Springer, 2010.
Знайти повний текст джерелаO’Donnell, Kevin, and Volkmar Dierolf, eds. Rare Earth Doped III-Nitrides for Optoelectronic and Spintronic Applications. Dordrecht: Springer Netherlands, 2010. http://dx.doi.org/10.1007/978-90-481-2877-8.
Повний текст джерелаRoesky, Herbert W., and David A. Atwood, eds. Group 13 Chemistry III. Berlin, Heidelberg: Springer Berlin Heidelberg, 2003. http://dx.doi.org/10.1007/3-540-46110-8.
Повний текст джерелаErol, Ayşe. Dilute III-V nitride semiconductors and material systems: Physics and technology. Berlin: Springer, 2008.
Знайти повний текст джерелаSymposium on III-V Nitride Materials and Processes (3rd 1998 Boston, Mass.). Proceedings of the Third Symposium on III-V Nitride Materials and Processes. Edited by Moustakas T. D, Mohney S. E, Pearton S. J, Electrochemical Society. Dielectric Science and Technology Division., Electrochemical Society Electronics Division, and Electrochemical Society. High Temperature Materials Division. Pennington, N.J: Electrochemical Society, Inc., 1999.
Знайти повний текст джерелаSymposium, on III-V. Nitride Materials and Processes (2nd 1997 Paris France). Proceedings of the Second Symposium on III-V Nitride Materials and Processes. Pennington, NJ: Electrochemical Society, 1998.
Знайти повний текст джерелаЧастини книг з теми "Nitrides of the III group"
Teke, Ali, and Hadis Morkoç. "Group III Nitrides." In Springer Handbook of Electronic and Photonic Materials, 753–804. Boston, MA: Springer US, 2006. http://dx.doi.org/10.1007/978-0-387-29185-7_32.
Повний текст джерелаFerreyra, Romualdo A., Congyong Zhu, Ali Teke, and Hadis Morkoç. "Group III Nitrides." In Springer Handbook of Electronic and Photonic Materials, 1. Cham: Springer International Publishing, 2017. http://dx.doi.org/10.1007/978-3-319-48933-9_31.
Повний текст джерелаEvarestov, R. A. "Nitrides of Boron and Group III Metals." In Theoretical Modeling of Inorganic Nanostructures, 347–427. Berlin, Heidelberg: Springer Berlin Heidelberg, 2015. http://dx.doi.org/10.1007/978-3-662-44581-5_6.
Повний текст джерелаSchubert, Mathias. "Wurtzite-Structure Materials (Group-III Nitrides, ZnO)." In Springer Tracts in Modern Physics, 109–45. Berlin, Heidelberg: Springer Berlin Heidelberg, 2005. http://dx.doi.org/10.1007/978-3-540-44701-6_7.
Повний текст джерелаHöfling, C., C. Schneider, and A. Forchel. "6.4.6 Devices based on group III–nitrides." In Growth and Structuring, 128–29. Berlin, Heidelberg: Springer Berlin Heidelberg, 2013. http://dx.doi.org/10.1007/978-3-540-68357-5_18.
Повний текст джерелаNeugebauer, Jörg. "Surface Structure and Adatom Kinetics of Group-III Nitrides." In Nitride Semiconductors, 295–318. Weinheim, FRG: Wiley-VCH Verlag GmbH & Co. KGaA, 2006. http://dx.doi.org/10.1002/3527607641.ch6.
Повний текст джерелаShul, R. J. "High-Density ECR Etching of Group-III Nitrides." In GaN and Related Materials, 399–431. London: CRC Press, 2021. http://dx.doi.org/10.1201/9781003211082-13.
Повний текст джерелаAbernathy, C. R. "Growth of Group III Nitrides from Molecular Beams." In GaN and Related Materials, 11–51. London: CRC Press, 2021. http://dx.doi.org/10.1201/9781003211082-2.
Повний текст джерелаO'Mahony, Donagh, and James G. Lunney. "Group III Nitride Growth." In Pulsed Laser Deposition of Thin Films, 291–312. Hoboken, NJ, USA: John Wiley & Sons, Inc., 2006. http://dx.doi.org/10.1002/9780470052129.ch13.
Повний текст джерелаChoudhuri, Bijit, and Aniruddha Mondal. "Group III—Nitrides and Other Semiconductors for Terahertz Detector." In Emerging Trends in Terahertz Solid-State Physics and Devices, 189–203. Singapore: Springer Singapore, 2020. http://dx.doi.org/10.1007/978-981-15-3235-1_12.
Повний текст джерелаТези доповідей конференцій з теми "Nitrides of the III group"
Pérez-Caro, M., M. Ramírez-López, J. S. Rojas-Ramírez, I. Martínez-Velis, Y. Casallas-Moreno, S. Gallardo-Hernández, B. J. Babu, et al. "Group III-nitrides nanostructures." In ADVANCED SUMMER SCHOOL IN PHYSICS 2011: EAV2011. AIP, 2012. http://dx.doi.org/10.1063/1.3678628.
Повний текст джерелаPearton, S. J., Fan Ren, B. P. Gila, and Cammy R. Abernathy. "Advanced processing of group-III nitrides." In Critical Review Collection. SPIE, 2002. http://dx.doi.org/10.1117/12.482624.
Повний текст джерелаHolmström, P., X. Y. Liu, H. Uchida, T. Aggerstam, A. Kikuchi, K. Kishino, S. Lourdudoss, T. G. Andersson, and L. Thylén. "Intersubband photonic devices by group-III nitrides." In Asia-Pacific Optical Communications. SPIE, 2007. http://dx.doi.org/10.1117/12.754372.
Повний текст джерелаRamsteiner, M. "Nitrogen incorporation in dilute group-III arsenide-nitrides." In 2004 13th International Conference on Semiconducting and Insulating Materials. IEEE, 2004. http://dx.doi.org/10.1109/sim.2005.1511413.
Повний текст джерелаSaurov, Sumit Narayan, A. F. M. Saniul Haq, and Muhammad Anisuzzaman Talukder. "Wideband photovoltaic energy conversion using group III-nitrides." In 2013 International Conference on Advances in Electrical Engineering (ICAEE). IEEE, 2013. http://dx.doi.org/10.1109/icaee.2013.6750305.
Повний текст джерелаHangleiter, Andreas. "Optical gain in wide-bandgap group-III nitrides." In Critical Review Collection. SPIE, 2002. http://dx.doi.org/10.1117/12.482625.
Повний текст джерелаFujioka, Hiroshi, Kohei Ueno, Atsushi Kobayashi, and Jitsuo Ohta. "Large area flexible devices based on group-III nitrides." In 2016 Compound Semiconductor Week (CSW) [Includes 28th International Conference on Indium Phosphide & Related Materials (IPRM) & 43rd International Symposium on Compound Semiconductors (ISCS)]. IEEE, 2016. http://dx.doi.org/10.1109/iciprm.2016.7528756.
Повний текст джерелаSoni, Shubhangi, S. Verma, Netram Kaurav, and K. K. Choudhary. "High pressure phase transition in group III nitrides compounds." In INTERNATIONAL CONFERENCE ON CONDENSED MATTER AND APPLIED PHYSICS (ICC 2015): Proceeding of International Conference on Condensed Matter and Applied Physics. Author(s), 2016. http://dx.doi.org/10.1063/1.4946489.
Повний текст джерелаJiang, Hongxing, and Jing Y. Lin. "Dynamics of fundamental optical transitions in group III nitrides." In Optoelectronics and High-Power Lasers & Applications, edited by Kong-Thon F. Tsen and Harold R. Fetterman. SPIE, 1998. http://dx.doi.org/10.1117/12.306144.
Повний текст джерелаLorenz, K., S. M. C. Miranda, N. P. Barradas, E. Alves, Y. Nanishi, W. J. Schaff, L. W. Tu, V. Darakchieva, Floyd D. McDaniel, and Barney L. Doyle. "Hydrogen In Group-III Nitrides: An Ion Beam Analysis Study." In APPLICATION OF ACCELERATORS IN RESEARCH AND INDUSTRY: Twenty-First International Conference. AIP, 2011. http://dx.doi.org/10.1063/1.3586110.
Повний текст джерелаЗвіти організацій з теми "Nitrides of the III group"
James P. Lewis. ?Structural Transformations in Ceramics: Perovskite-like Oxides and Group III, IV, and V Nitrides? Office of Scientific and Technical Information (OSTI), December 2006. http://dx.doi.org/10.2172/909138.
Повний текст джерелаLawniczak-Jablonska, K., [Institute of Physics, Warsaw (Poland)], Z. Liliental-Weber, and E. M. Gullikson. Anisotropy of the nitrogen conduction states in the group III nitrides studied by polarized x-ray absorption. Office of Scientific and Technical Information (OSTI), April 1997. http://dx.doi.org/10.2172/603468.
Повний текст джерелаEdgar, James H. High K Oxide Insulated Gate Group III Nitride-Based FETs. Fort Belvoir, VA: Defense Technical Information Center, March 2014. http://dx.doi.org/10.21236/ada622706.
Повний текст джерелаWang, George T., James Randall Creighton, and Albert Alec Talin. MOCVD synthesis of group III-nitride heterostructure nanowires for solid-state lighting. Office of Scientific and Technical Information (OSTI), November 2006. http://dx.doi.org/10.2172/899363.
Повний текст джерелаPark, Gil Han, and Jin-Joo Song. BMDO-AASERT: Group III Nitride Semiconductor Nanostructure Research MOCVD Growth and Novel Characterizations of High Temperature, High Carrier Density and Microcrack Lasing Effects. Fort Belvoir, VA: Defense Technical Information Center, December 2001. http://dx.doi.org/10.21236/ada397734.
Повний текст джерелаDietz, Nikolaus. High-pressure CVD Growth of InN and Indium-rich Group III-nitride Compound Semiconductors for Novel Mid- and Far-infrared Detectors and Emitters. Fort Belvoir, VA: Defense Technical Information Center, February 2010. http://dx.doi.org/10.21236/ada563163.
Повний текст джерелаVartuli, C. B., J. W. Lee, and J. D. MacKenzie. ICP dry etching of III-V nitrides. Office of Scientific and Technical Information (OSTI), October 1997. http://dx.doi.org/10.2172/541909.
Повний текст джерелаVartuli, C. B., S. J. Pearton, C. R. Abernathy, J. D. MacKenzie, E. S. Lambers, and J. C. Zolper. High temperature surface degradation of III-V nitrides. Office of Scientific and Technical Information (OSTI), May 1996. http://dx.doi.org/10.2172/231697.
Повний текст джерелаZolper, J. C., S. J. Pearton, J. S. Williams, H. H. Tan, R. J. Jr Karlicek, and R. A. Stall. Ion implantation and annealing studies in III-V nitrides. Office of Scientific and Technical Information (OSTI), December 1996. http://dx.doi.org/10.2172/432983.
Повний текст джерелаJiang, Hongxing, and Jingyu Lin. Optical and Electrical Properties of III-Nitrides and Related Materials. Office of Scientific and Technical Information (OSTI), January 2016. http://dx.doi.org/10.2172/1235589.
Повний текст джерела