Добірка наукової літератури з теми "Nitride Thin Films"
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Статті в журналах з теми "Nitride Thin Films"
Kikkawa, Shinichi, K. Sakon, Y. Kawaai, and T. Takeda. "Magnetoresistance of Post-Annealed Iron Nitride Related Thin Films." Advances in Science and Technology 52 (October 2006): 70–74. http://dx.doi.org/10.4028/www.scientific.net/ast.52.70.
Повний текст джерелаGerlach, J. W., J. Mennig, and B. Rauschenbach. "Epitaxial gadolinium nitride thin films." Applied Physics Letters 90, no. 6 (February 5, 2007): 061919. http://dx.doi.org/10.1063/1.2472538.
Повний текст джерелаPreschilla A., Nisha, S. Major, Nigvendra Kumar, I. Samajdar, and R. S. Srinivasa. "Nanocrystalline gallium nitride thin films." Applied Physics Letters 77, no. 12 (2000): 1861. http://dx.doi.org/10.1063/1.1311595.
Повний текст джерелаKonyashin, Igor, and German Fox-Rabinovich. "Nanograined Titanium Nitride Thin Films." Advanced Materials 10, no. 12 (August 1998): 952–55. http://dx.doi.org/10.1002/(sici)1521-4095(199808)10:12<952::aid-adma952>3.0.co;2-o.
Повний текст джерелаJouan, Pierre Yves, Arnaud Tricoteaux, and Nicolas Horny. "Elaboration of nitride thin films by reactive sputtering." Rem: Revista Escola de Minas 59, no. 2 (June 2006): 225–32. http://dx.doi.org/10.1590/s0370-44672006000200013.
Повний текст джерелаKamat, Hrishikesh, Xingwu Wang, James Parry, Yueling Qin, and Hao Zeng. "Synthesis and Characterization of Copper-Iron Nitride Thin Films." MRS Advances 1, no. 3 (December 14, 2015): 203–8. http://dx.doi.org/10.1557/adv.2015.13.
Повний текст джерелаRUSOP, M., T. SOGA, T. JIMBO, M. UMENO, and M. SHARON. "SEMICONDUCTING AMORPHOUS CAMPHORIC CARBON NITRIDE THIN FILMS." Surface Review and Letters 12, no. 04 (August 2005): 587–95. http://dx.doi.org/10.1142/s0218625x05007475.
Повний текст джерелаLinthicum, Kevin, Thomas Gehrke, Darren Thomson, Eric Carlson, Pradeep Rajagopal, Tim Smith, Dale Batchelor, and Robert Davis. "Pendeoepitaxy of gallium nitride thin films." Applied Physics Letters 75, no. 2 (July 12, 1999): 196–98. http://dx.doi.org/10.1063/1.124317.
Повний текст джерелаBykhovski, A. D., V. V. Kaminski, M. S. Shur, Q. C. Chen, and M. A. Khan. "Pyroelectricity in gallium nitride thin films." Applied Physics Letters 69, no. 21 (November 18, 1996): 3254–56. http://dx.doi.org/10.1063/1.118027.
Повний текст джерелаHultman, L. "Thermal stability of nitride thin films." Vacuum 57, no. 1 (April 2000): 1–30. http://dx.doi.org/10.1016/s0042-207x(00)00143-3.
Повний текст джерелаДисертації з теми "Nitride Thin Films"
Shu, Rui. "Nonstoichiometric Multicomponent Nitride Thin Films." Licentiate thesis, Linköpings universitet, Tunnfilmsfysik, 2020. http://urn.kb.se/resolve?urn=urn:nbn:se:liu:diva-170529.
Повний текст джерелаKhoshman, Jebreel M. "Spectroscopic ellipsometry charactarization of single and multilayer aluminum nitride / indium nitride thin film systems." Ohio : Ohio University, 2005. http://www.ohiolink.edu/etd/view.cgi?ohiou1129584189.
Повний текст джерелаKerdsongpanya, Sit. "Scandium Nitride Thin Films for Thermoelectrics." Licentiate thesis, Linköpings universitet, Tunnfilmsfysik, 2012. http://urn.kb.se/resolve?urn=urn:nbn:se:liu:diva-85917.
Повний текст джерелаNeidhardt, Jörg. "Fullerene-like carbon nitride thin solid films /." Linköping : Univ, 2004. http://www.bibl.liu.se/liupubl/disp/disp2004/tek877s.pdf.
Повний текст джерелаSanchez, Mathon Gustavo. "Piezoelectric aluminum nitride thin films by PECVD." Limoges, 2009. https://aurore.unilim.fr/theses/nxfile/default/9224e391-3c48-4c10-9166-c2a2bed3c5f4/blobholder:0/2009LIMO4007.pdf.
Повний текст джерелаPolycrystalline aluminum nitride thin films were produced with a microwave-plasma enhanced chemical vapor deposition technique. The plasma-injector distance, the substrate temperature and the RF bias were the main variables which allowed achieving this objective. At the time, it was possible to control the preferential orientation as <0001> or <1010>, both interesting for piezoelectric applications. The growth mechanisms that conducted to film microstructure development under different process conditions were explained, enriched by the comparison with a physical vapor deposition sputtering technique. The obtained films were characterized in their piezoelectric performance, including the construction of surface acoustic wave devices and bulk acoustic wave devices. Adequate piezoelectric response and acoustic velocities were obtained for <0001> oriented films, while <1010> oriented films did not show piezoelectric response under the configurations essayed. An extensive analysis was done in order to explain these behaviors
Knight, Patrick J. "Nitride formation at silicon surfaces." Thesis, University of Southampton, 1992. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.238903.
Повний текст джерелаTaylor, Matthew Bruce, and matthew taylor@rmit edu au. "A Study of Aluminium Nitride and Titanium Vanadium Nitride Thin Films." RMIT University. Applied Science, 2007. http://adt.lib.rmit.edu.au/adt/public/adt-VIT20080529.151820.
Повний текст джерелаZhang, Xuefei. "Synthesis and Characterization of Zr1-xSixN Thin Film Materials." Fogler Library, University of Maine, 2007. http://www.library.umaine.edu/theses/pdf/ZhangX2007.pdf.
Повний текст джерелаAnutgan, Mustafa. "Investigation Of Plasma Deposited Boron Nitride Thin Films." Master's thesis, METU, 2007. http://etd.lib.metu.edu.tr/upload/12608611/index.pdf.
Повний текст джерелаJoelsson, Torbjörn. "Nanostructural design of transition metal nitride thin films /." Linköping : Dept. of physics and measurement technology, Univ, 2005. http://www.bibl.liu.se/liupubl/disp/disp2005/tek923s.pdf.
Повний текст джерелаКниги з теми "Nitride Thin Films"
Jamal, Deen M., Electrochemical Society. Dielectric Science and Technology Division., Electrochemical Society Electronics Division, and Symposium on Silicon Nitride and Silicon Dioxide Thin Insulating Films (4th : 1997 : Montreal, Quebec), eds. Silicon nitride and silicon dioxide thin insulating films: Proceedings of the Symposium on Silicon Nitride and Silicon Dioxide Thin Insulating Films. Pennington, New Jersey: Electrochemical Society, 1997.
Знайти повний текст джерелаSymposium on Silicon Nitride, Silicon Dioxide Thin Insulating Films, and Emerging Dielectrics (9th 2007 Chicago, Ill.). Silicon nitride, silicon dioxide, and emerging dielectrics 9. Edited by Sah R. E, Electrochemical Society. Dielectric Science and Technology Division., and Electrochemical Society Meeting. Pennington, N.J: Electrochemical Society, 2007.
Знайти повний текст джерелаSymposium on Silicon Nitride, Silicon Dioxide Thin Insulating Films, and Emerging Dielectrics (9th 2007 Chicago, Ill.). Silicon nitride, silicon dioxide, and emerging dielectrics 9. Edited by Sah R. E, Electrochemical Society. Dielectric Science and Technology Division., and Electrochemical Society Meeting. Pennington, N.J: Electrochemical Society, 2007.
Знайти повний текст джерелаLuches, Armando. Laser-assisted deposition of boron nitride thin films and nanotubes. Hauppauge, N.Y: Nova Science Publisher's, 2010.
Знайти повний текст джерелаSymposium on Silicon Nitride and Silicon Dioxide Thin Insulating Films (1988 Chicago, Ill.). Proceedings of the Symposium on Silicon Nitride and Silicon Dioxide Thin Insulating Films. Pennington, NJ: Electrochemical Society, 1989.
Знайти повний текст джерелаSymposium on Silicon Nitride and Silicon Dioxide Thin Insulating Films (2nd 1986 San Diego, Calif.). Proceedings of the Symposium on Silicon Nitride and Silicon Dioxide Thin Insulating Films. Pennington, NJ (10 S. Main St., Pennington 08534-2696: Electrochemical Society), 1987.
Знайти повний текст джерелаSymposium on Silicon Nitride and Silicon Dioxide Thin Insulating Films (7th 2003 Paris, France). Silicon nitride and silicon dioxide thin insulating films VII: Proceedings of the international symposium. Edited by Sah R. E, Electrochemical Society. Dielectric Science and Technology Division., Electrochemical Society Electronics Division, and Electrochemical Society Meeting. Pennington, NJ: Electrochemical Society, 2003.
Знайти повний текст джерелаSymposium on Silicon Nitride and Silicon Dioxide Thin Insulating Films (5th 1999 Seattle, Wash.). Silicon nitride and silicon dioxide thin insulating films: Proceedings of the fifth international symposium. Pennington, NJ (10 S. Main St., Pennington 08534-2696: Electrochemical Society), 1999.
Знайти повний текст джерелаSymposium on Silicon Nitride and Silicon Dioxide Thin Insulating Films (3rd 1994 San Francisco, Calif.). Proceedings of the Third Symposium on Silicon Nitride and Silicon Dioxide Thin Insulating Films. Pennington, NJ (10 S. Main St., Pennington 08534-2696: Electrochemical Society), 1994.
Знайти повний текст джерелаSymposium on Silicon Nitride and Silicon Dioxide Thin Insulating Films (8th 2005 Québec, Québec). Silicon nitride, silicon dioxide thin insulating films, and other emerging diele[c]trics VIII: Proceedings of the international symposium. Edited by Sah R. E, Electrochemical Society. Dielectric Science and Technology Division., Electrochemical Society Electronics Division, and Electrochemical Society Meeting. Pennington, N.J: Electrochemical Society, 2005.
Знайти повний текст джерелаЧастини книг з теми "Nitride Thin Films"
Eklund, Per, Sit Kerdsongpanya, and Björn Alling. "Transition-Metal-Nitride-Based Thin Films as Novel Thermoelectric Materials." In Thermoelectric Thin Films, 121–38. Cham: Springer International Publishing, 2019. http://dx.doi.org/10.1007/978-3-030-20043-5_6.
Повний текст джерелаO'Mahony, Donagh, and James G. Lunney. "Group III Nitride Growth." In Pulsed Laser Deposition of Thin Films, 291–312. Hoboken, NJ, USA: John Wiley & Sons, Inc., 2006. http://dx.doi.org/10.1002/9780470052129.ch13.
Повний текст джерелаMadan, Anita, and Scott A. Barnett. "Fundamentals of Nitride-Based Superlattice Thin Films." In Materials Science of Carbides, Nitrides and Borides, 187–204. Dordrecht: Springer Netherlands, 1999. http://dx.doi.org/10.1007/978-94-011-4562-6_11.
Повний текст джерелаKumar, Dhruva, and Bibhu Prasad Swain. "Characterization of Silicon Carbo-Nitride Thin Films." In Lecture Notes in Electrical Engineering, 131–38. Singapore: Springer Singapore, 2017. http://dx.doi.org/10.1007/978-981-10-4765-7_14.
Повний текст джерелаKrishna, Shibin, Neha Aggarwal, Lalit Goswami, and Govind Gupta. "Growth Dynamics of Epitaxial Gallium Nitride Films Grown on c-Sapphire Substrates." In Recent Advances in Thin Films, 75–101. Singapore: Springer Singapore, 2020. http://dx.doi.org/10.1007/978-981-15-6116-0_4.
Повний текст джерелаGupta, Mukul. "Synthesis, Stability and Self-Diffusion in Iron Nitride Thin Films: A Review." In Recent Advances in Thin Films, 131–79. Singapore: Springer Singapore, 2020. http://dx.doi.org/10.1007/978-981-15-6116-0_6.
Повний текст джерелаWang, Xingwu, James P. Parry, Hrishikesh Kamat, Ruikun Pan, and Hao Zeng. "Iron-Copper Nitride Thin Films Fabricated by Sputtering." In Developments in Strategic Ceramic Materials, 239–50. Hoboken, NJ, USA: John Wiley & Sons, Inc., 2015. http://dx.doi.org/10.1002/9781119211747.ch19.
Повний текст джерелаPonce, Fernando A. "Microstructure of Epitaxial III–V Nitride Thin Films." In GaN and Related Materials, 141–70. London: CRC Press, 2021. http://dx.doi.org/10.1201/9781003211082-5.
Повний текст джерелаKamat, Hrishikesh, Xingwu Wang, Yueling Qin, James Parry, and Hao Zeng. "Magnetic Studies of Copper Incorporated Iron Nitride Thin Films." In Proceedings of the 41st International Conference on Advanced Ceramics and Composites, 125–36. Hoboken, NJ, USA: John Wiley & Sons, Inc., 2018. http://dx.doi.org/10.1002/9781119474678.ch12.
Повний текст джерелаKikkawa, Shinichi, K. Sakon, Y. Kawaai, and T. Takeda. "Magnetoresistance of Post-Annealed Iron Nitride Related Thin Films." In Advances in Science and Technology, 70–74. Stafa: Trans Tech Publications Ltd., 2006. http://dx.doi.org/10.4028/3-908158-08-7.70.
Повний текст джерелаТези доповідей конференцій з теми "Nitride Thin Films"
Oshikane, Yasushi. "Asymmetric metal-insulator-metal (MIM) structure formed by pulsed Nd:YAG laser deposition with titanium nitride (TiN) and aluminum nitride (AlN)." In Nanostructured Thin Films X, edited by Tom G. Mackay, Akhlesh Lakhtakia, and Yi-Jun Jen. SPIE, 2017. http://dx.doi.org/10.1117/12.2273483.
Повний текст джерелаKobayashi, Kiyoteru, Hiroshi Miyatake, and Makoto Hirayama. "Conduction in Thin Nitride Films and Oxide/Nitride Films." In 1989 Conference on Solid State Devices and Materials. The Japan Society of Applied Physics, 1989. http://dx.doi.org/10.7567/ssdm.1989.s-d-8.
Повний текст джерелаYu, X. Z., Z. Z. Jiang, Y. Yang, W. Pan, and W. Z. Shen. "Weak localization in indium nitride films." In Sixth International Conference on Thin Film Physics and Applications. SPIE, 2008. http://dx.doi.org/10.1117/12.792265.
Повний текст джерелаChubarov, M., H. Pedersen, H. Hogberg, S. Filippov, J. A. A. Engelbrecht, J. O'Connel, and A. Henry. "Characterization of Boron Nitride thin films." In 2013 Conference on Lasers and Electro-Optics Pacific Rim (CLEO-PR). IEEE, 2013. http://dx.doi.org/10.1109/cleopr.2013.6600222.
Повний текст джерелаAllen, Thomas H. "Nonconventional materials in optical thin films." In OSA Annual Meeting. Washington, D.C.: Optica Publishing Group, 1989. http://dx.doi.org/10.1364/oam.1989.mj2.
Повний текст джерелаKumar, N., K. Pourrezaei, B. Singh, and R. J. DeMaria. "RF Reactively Sputtered Aluminum Nitride Thin Films." In Sixth IEEE International Symposium on Applications of Ferroelectrics. IEEE, 1986. http://dx.doi.org/10.1109/isaf.1986.201101.
Повний текст джерелаAndersen, K. N., P. C. Nielsen, and W. Svendsen. "Silicon rich nitride thin films and waveguides." In Integrated Photonics Research. Washington, D.C.: OSA, 2002. http://dx.doi.org/10.1364/ipr.2002.itha4.
Повний текст джерелаJiang, Liudi, A. G. Fitzgerald, M. J. Rose, A. Lousa, and S. Gimeno. "Cubic boron nitride films prepared with different deposition times." In 4th International Conference on Thin Film Physics and Applications, edited by Junhao Chu, Pulin Liu, and Yong Chang. SPIE, 2000. http://dx.doi.org/10.1117/12.408326.
Повний текст джерелаScholz, Ferdinand, Oliver Rettig, Jan-Patrick Scholz, Natja Steiger, Sebastian Bauer, Yueliang Li, Haoyuan Qi, Johannes Biskupek, Ute Kaiser, and Klaus Thonke. "Growth and optical properties of wurtzite AlBGaN thin films (Conference Presentation)." In Gallium Nitride Materials and Devices XIV, edited by Hadis Morkoç, Hiroshi Fujioka, and Ulrich T. Schwarz. SPIE, 2019. http://dx.doi.org/10.1117/12.2506774.
Повний текст джерелаShi, Xiaolei, Yigang Chen, Weimin Shi, and Linjun Wang. "Study of high temperature piezoelectric scandium aluminum nitride thin films." In Seventh International Conference on Thin Film Physics and Applications, edited by Junhao Chu and Zhanshan Wang. SPIE, 2010. http://dx.doi.org/10.1117/12.888228.
Повний текст джерелаЗвіти організацій з теми "Nitride Thin Films"
Apen, E. A., L. M. Atagi, R. S. Barbero, B. F. Espinoza, K. M. Hubbard, K. V. Salazar, J. A. Samuels, D. C. Smith, and D. M. Hoffman. New deposition processes for the growth of oxide and nitride thin films. Office of Scientific and Technical Information (OSTI), November 1998. http://dx.doi.org/10.2172/676883.
Повний текст джерелаFarrell, R., V. R. Pagan, A. Kabulski, Sridhar Kuchibhatl, J. Harman, K. R. Kasarla, L. E. Rodak, P. Famouri, J. Peter Hensel, and D. Korakakis. High Temperature Annealing Studies on the Piezoelectric Properties of Thin Aluminum Nitride Films. Office of Scientific and Technical Information (OSTI), May 2008. http://dx.doi.org/10.2172/1015474.
Повний текст джерелаSnow, G. Characterization of dc magnetron sputtering systems for the deposition of tantalum nitride, titanium, and palladium thin films for HMC (hybrid microcircuit) applications. Office of Scientific and Technical Information (OSTI), July 1989. http://dx.doi.org/10.2172/5884585.
Повний текст джерелаHabermehl, Scott D., Peggy J. Clews, Sasha Summers, and Sukwon Choi. Computational and Experimental Characterization of Aluminum Nitride-Silicon Carbide Thin Film Composites for High Temperature Sensor Applications. Office of Scientific and Technical Information (OSTI), December 2014. http://dx.doi.org/10.2172/1490541.
Повний текст джерела