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Статті в журналах з теми "Nanoelectronic device"
Nikolić, K., M. Forshaw, and R. Compañó. "The Current Status of Nanoelectronic Devices." International Journal of Nanoscience 02, no. 01n02 (February 2003): 7–29. http://dx.doi.org/10.1142/s0219581x03001048.
Повний текст джерелаKosina, Hans, and Siegfried Selberherr. "Device Simulation Demands of Upcoming Microelectronics Devices." International Journal of High Speed Electronics and Systems 16, no. 01 (March 2006): 115–36. http://dx.doi.org/10.1142/s0129156406003576.
Повний текст джерелаWhite, Marvin H., Yu (Richard) Wang, Stephen J. Wrazien, and Yijie (Sandy) Zhao. "ADVANCEMENTS IN NANOELECTRONIC SONOS NONVOLATILE SEMICONDUCTOR MEMORY (NVSM) DEVICES AND TECHNOLOGY." International Journal of High Speed Electronics and Systems 16, no. 02 (June 2006): 479–501. http://dx.doi.org/10.1142/s0129156406003801.
Повний текст джерелаPanfilov, Y. V., I. A. Rodionov, I. A. Ryzhikov, A. S. Baburin, D. O. Moskalev, and E. S. Lotkov. "Ultrathin film deposition for nanoelectronic device manucturing." IOP Conference Series: Materials Science and Engineering 781 (May 5, 2020): 012021. http://dx.doi.org/10.1088/1757-899x/781/1/012021.
Повний текст джерелаSaxena, Shubhangi, and Kamsali Manjunathachari. "Novel Nanoelectronic Materials and Devices: For Future Technology Node." ECS Transactions 107, no. 1 (April 24, 2022): 15701–11. http://dx.doi.org/10.1149/10701.15701ecst.
Повний текст джерелаKOSINA, HANS. "NANOELECTRONIC DEVICE SIMULATION BASED ON THE WIGNER FUNCTION FORMALISM." International Journal of High Speed Electronics and Systems 17, no. 03 (September 2007): 475–84. http://dx.doi.org/10.1142/s0129156407004667.
Повний текст джерелаNidhi, Tashi Nautiyal, and Samaresh Das. "Large-Scale Synthesis of Nickel Sulfide for Electronic Device Applications." MRS Advances 5, no. 52-53 (2020): 2727–35. http://dx.doi.org/10.1557/adv.2020.339.
Повний текст джерелаLiffmann, R., M. Homberger, M. Mennicken, S. Karthäuser, and U. Simon. "Polydiacetylene stabilized gold nanoparticles – extraordinary high stability and integration into a nanoelectrode device." RSC Advances 5, no. 125 (2015): 102981–92. http://dx.doi.org/10.1039/c5ra17545c.
Повний текст джерелаJanes, D. B., V. R. Kolagunta, M. Batistuta, B. L. Walsh, R. P. Andres, Jia Liu, J. Dicke, et al. "Nanoelectronic device applications of a chemically stable GaAs structure." Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures 17, no. 4 (1999): 1773. http://dx.doi.org/10.1116/1.590824.
Повний текст джерелаMüller, T., A. Lorke, Q. T. Do, F. J. Tegude, D. Schuh, and W. Wegscheider. "A three-terminal planar selfgating device for nanoelectronic applications." Solid-State Electronics 49, no. 12 (December 2005): 1990–95. http://dx.doi.org/10.1016/j.sse.2005.09.004.
Повний текст джерелаДисертації з теми "Nanoelectronic device"
Ye, Sheng. "Kelvin Probe Force Microscopy (KPFM) for nanoelectronic device characterisation." Thesis, University of Southampton, 2016. https://eprints.soton.ac.uk/419059/.
Повний текст джерелаDi, Giacomo Sandro John. "Development of silicon germanium-based quantum dots for nanoelectronic device applications." The Ohio State University, 2005. http://rave.ohiolink.edu/etdc/view?acc_num=osu1406719133.
Повний текст джерелаPENAZZI, GABRIELE. "Development of an atomistic/continous simulation tool for nanoelectronic devices." Doctoral thesis, Università degli Studi di Roma "Tor Vergata", 2010. http://hdl.handle.net/2108/1335.
Повний текст джерелаThe simulation of novel optoelectronic devices is a great challenge for the engineering community. The enoromous progress in device fabrication technology allowed such a massive downscaling that geometrical feature in the nanoscale play a crucial role. Furthermore we have a great effort in exploring alternative solutions respect to more traditional semiconductor devices. It involves molecular electronic, semiconductive polymers, self-assembled structures, quasi-one dimensional and two dimensional materials. In such scenario it's crucial to develop modular simulation tools able to connect different physical models on different length scales. Quantum effect play an important role and we need to take them into account, avoiding anyway an explosion of the computational complexity. Thus it's needed to go in the direction of a multiscale approach, which is already applied with success in mechanical science. The goal of this work is to include atomistic description and atomistic models in TiberCAD, a Technology CAD code for simulation of optoelectronic devices which can rely on excellent instruments for interfacing different models in a multyphisics/multiscale environment. Atomistic models for the calculation of strain, structure geometry and electronic states have been included. A novel technique for describing quantum transport with an efficient algorithm is also presented. These work wants to push TiberCAD to be a reference tool for calculation of complex optoeletronic devices at the nanoscale.
Pan, Chenyun. "A hierarchical optimization engine for nanoelectronic systems using emerging device and interconnect technologies." Diss., Georgia Institute of Technology, 2015. http://hdl.handle.net/1853/53931.
Повний текст джерелаChouard, Florian Raoul Verfasser], Doris [Akademischer Betreuer] [Schmitt-Landsiedel, and Sebastian M. [Akademischer Betreuer] Sattler. "Device Aging in Analog Circuits for Nanoelectronic CMOS Technologies / Florian Raoul Chouard. Gutachter: Sebastian M. Sattler ; Doris Schmitt-Landsiedel. Betreuer: Doris Schmitt-Landsiedel." München : Universitätsbibliothek der TU München, 2012. http://d-nb.info/1024355020/34.
Повний текст джерелаChiu, Pit Ho Patrio 1977. "Bismuth based nanoelectronic devices." Thesis, McGill University, 2005. http://digitool.Library.McGill.CA:80/R/?func=dbin-jump-full&object_id=100337.
Повний текст джерелаBlackburn, A. M. "Multiple-gate vacuum nanoelectronic devices." Thesis, University of Cambridge, 2005. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.596691.
Повний текст джерелаMaassen, Jesse. "First principles simulations of nanoelectronic devices." Thesis, McGill University, 2012. http://digitool.Library.McGill.CA:80/R/?func=dbin-jump-full&object_id=106463.
Повний текст джерелаComme la miniaturisation des dispositifs commence à révéler la nature atomique des matériaux, où les liaisons chimiques et les effets quantiques sont importants, nous devons recourir à une théorie sans paramètre pour obtenir des prédictions. Cette thèse étudie les propriétés de transport quantique des dispositifs nanoélectroniques en utilisant des méthodes ab initio atomiques. Notre formalisme théorique combine la théorie de la fonctionnelle de la densité (DFT) avec les fonctions de Green hors-équilibres (NEGF). Résoudre l'Hamiltonien DFT de manière auto-consistante avec la densité de charge NEGF permet de simuler des systèmes hors-équilibres sans utiliser des paramètres. Cette technique sophistiquée a été utilisée pour étudier trois problèmes liés au domaine de la nanoélectronique. Premièrement, nous avons étudié le rôle des contacts métalliques (Cu, Ni et Co) sur les caractéristiques de transport des dispositifs à base de graphène. Dans le cas du Cu, le graphène est simplement dopé en électrons (décalage du niveau de Fermi = −0.7 eV) ce qui crée une signature unique dans le profil de conduction permettant d'extraire le niveau de dopage. Avec Ni et Co, la formation de bandes interdites dépendantes du spin détruit la dispersion linéaire des états du graphène ce qui permet d'atteindre une efficacité d'injection de spin de 60% et 80%, respectivement. Deuxièmement, nous avons étudié comment des distributions de dopage contrôlées dans les nano-transistors en Si pourraient supprimer les courants de fuite à l'état OFF. En supposant que les dopants (B et P) sont confinés dans des régions de 1.1 nm dans le canal, nous avons découvert de grandes variations de conductances (Gmax/Gmin ~ 10^5) en fonction de l'emplacement du dopage. Les plus grandes fluctuations surviennent lorsque les dopants sont à proximité des électrodes. Nos résultats indiquent que si les dopants sont éloignés des électrodes, d'une distance égale à 20% de la longueur du canal, le courant tunnel peut être supprimé par un facteur de 2 par rapport au dopage uniforme. Ainsi, l'ingénierie du dopage pourrait réduire les variations d'un dispositif à un autre et diminuer le courant de fuite. Dernièrement, nous avons intégré un modèle de déphasage dans notre théorie de transport ab initio qui a été utilisé pour étudier l'effet des collisions dans trois systèmes différents. Nos calculs ont révélé le rôle complexe du déphasage; parfois la conduction augmente ou diminue selon le système. Nous avons démontré que la rétrodiffusion, présent dans ce modèle, permet de récupérer la loi d'Ohm.
ROSATI, ROBERTO. "Microscopic modeling of energy dissipation and decoherence in nanoscale materials and devices." Doctoral thesis, Politecnico di Torino, 2015. http://hdl.handle.net/11583/2599755.
Повний текст джерелаROTTA, DAVIDE. "Emerging devices and materials for nanoelectronics." Doctoral thesis, Università degli Studi di Milano-Bicocca, 2015. http://hdl.handle.net/10281/76048.
Повний текст джерелаThis work of thesis explores two emerging research device concepts as possible platforms for novel integrated circuits with unconventional functionalities. Nowadays integrated circuits with advanced performances are available at affordable costs, thanks to the progressive miniaturization of electronic components in the last decades. However, bare geometrical scaling is no more a practical way to improve the device performances and alternative strategies must be considered to achieve an equivalent scaling of the functionalities. The introduction of conceptually new devices and paradigms of information processing (Emerging Research Devices) or new materials with unconventional properties (Emerging Research Materials) are viable approaches, as indicated by the International Technology Roadmap of Semiconductors (ITRS), to enhance the functionalities of integrated circuits at the Front-End-Of-Line. The two options investigated to this respect are silicon devices for quantum computation based on a classical Complementary Metal-Oxide-Semiconductor (CMOS) platform and standard Metal-Oxide-Semiconductor Field-Effect-Transistors (MOSFETs) based on MoS2 thin film. In particular, the integration of Quantum Information Processing (QIP) in Si would take advantage of Si-based technology to introduce a completely new paradigm of information processing that has the potential to outperform classical computers in some computational tasks, like prime number factoring and the search in a big database. MoS2, conversely, can be exfoliated up to the single layer thickness. Such intrinsic and extreme scalability makes this material suitable for end-of-roadmap ultrascaled electronic devices as well as for other applications in the fields of sensors, optoelectronics and flexible electronics. This work reports on the experimental activity carried out at Laboratory MDM-IMM-CNR in the framework of the PhD school on Nanostructures and Nanotechnology at Università di Milano Bicocca. Electron Beam Lithography (EBL) and mainstream clean-room processing techniques have been intensively utilized to fabricate CMOS devices for QIP on the one hand and to integrate mechanically exfoliated MoS2 flakes in a conventional FET structure on the other hand. After a careful calibration and optimization of the process parameters, several different Quantum Dot (QD) configurations were designed and fully realized, achieving critical dimensions under 50 nm. Such device architectures were developed on a Silicon-On-Insulator (SOI) platform, in order to eventually access a straightforward integration into the CMOS mainstream technology. Si-QDs and donor-based devices have been then tested by electrical characterization techniques at cryogenic temperatures down to 300 mK. In detail, single electron tunneling events on a donor atom have been controlled by pulsed-gate techniques in high magnetic fields up to 8T, providing a preliminary characterization for the initialization procedure of donor qubits. The control of the charge states of Si-QDs have been also demonstrated by means of stability diagrams as well as the analysis of random telegraph noise arising from single electron tunneling between two QDs. Finally, a feasibility study for the large scale integration of quantum information processing was done based on a double QD hybrid qubit architecture. On the other side, MoS2 thin film transistors have been made by mechanical exfoliation of crystalline MoS2 and electrodes definition by EBL. Electrical characterization was performed on such devices, with a particular focus on the electrical transport in a FET device and on the spectroscopy of interface traps, that turns out to be a limiting factor for the logic operation.
Книги з теми "Nanoelectronic device"
Chen, An, James Hutchby, Victor Zhirnov, and George Bourianoff, eds. Emerging Nanoelectronic Devices. Chichester, United Kingdom: John Wiley & Sons Ltd, 2014. http://dx.doi.org/10.1002/9781118958254.
Повний текст джерелаEvtukh, Anatoliy, Hans Hartnagel, Oktay Yilmazoglu, Hidenori Mimura, and Dimitris Pavlidis. Vacuum Nanoelectronic Devices. Chichester, UK: John Wiley & Sons, Ltd, 2015. http://dx.doi.org/10.1002/9781119037989.
Повний текст джерелаSarkar, Angsuman, and Arpan Deyasi. Low-Dimensional Nanoelectronic Devices. Boca Raton: Apple Academic Press, 2022. http://dx.doi.org/10.1201/9781003277378.
Повний текст джерелаLabbé, Christophe, Subhananda Chakrabarti, Gargi Raina, and B. Bindu, eds. Nanoelectronic Materials and Devices. Singapore: Springer Singapore, 2018. http://dx.doi.org/10.1007/978-981-10-7191-1.
Повний текст джерелаNanoelectronics: Principles and devices. Boston, MA: Artech House, 2005.
Знайти повний текст джерелаDragoman, Mircea. Nanoelectronics: Principles and devices. 2nd ed. Boston: Artech House, 2009.
Знайти повний текст джерелаDragoman, Mircea. Nanoelectronics: Principles and devices. Boston, MA: Artech House, 2005.
Знайти повний текст джерелаJoodaki, Mojtaba. Selected Advances in Nanoelectronic Devices. Berlin, Heidelberg: Springer Berlin Heidelberg, 2013. http://dx.doi.org/10.1007/978-3-642-31350-9.
Повний текст джерелаMicroelectronics to nanoelectronics: Materials, devices & manufacturability. Boca Raton, FL: Taylor & Francis, 2012.
Знайти повний текст джерелаRaj, Balwinder, and Arun Kumar Singh. Nanoelectronic Devices for Hardware and Software Security. Boca Raton: CRC Press, 2021. http://dx.doi.org/10.1201/9781003126645.
Повний текст джерелаЧастини книг з теми "Nanoelectronic device"
Martini, I., M. Kamp, and A. Forchel. "Combined Approaches for Nanoelectronic Device Fabrication." In Alternative Lithography, 235–48. Boston, MA: Springer US, 2003. http://dx.doi.org/10.1007/978-1-4419-9204-8_12.
Повний текст джерелаKumar, Arun, and Pramod Kumar Tiwari. "Silicon Nanotube FETs: From Device Concept to Analytical Model Development." In Low-Dimensional Nanoelectronic Devices, 153–71. Boca Raton: Apple Academic Press, 2022. http://dx.doi.org/10.1201/9781003277378-6.
Повний текст джерелаKunduru, Vindhya, Yamini Yadav, and Shalini Prasad. "Characteristics of Carbon Nanotubes for Nanoelectronic Device Applications." In Nanopackaging, 345–75. Boston, MA: Springer US, 2008. http://dx.doi.org/10.1007/978-0-387-47325-3_16.
Повний текст джерелаLiu, Z. "Novel Nanoelectronic Device Applications of Nanocrystals and Nanoparticles." In Semiconductor Nanocrystals and Metal Nanoparticles, 461–500. Taylor & Francis Group, 6000 Broken Sound Parkway NW, Suite 300, Boca Raton, FL 33487-2742: CRC Press, 2016. http://dx.doi.org/10.1201/9781315374628-14.
Повний текст джерелаShanmugam, Nandhinee Radha, and Shalini Prasad. "Characteristics of Carbon Nanotubes for Nanoelectronic Device Applications." In Nanopackaging, 597–628. Cham: Springer International Publishing, 2018. http://dx.doi.org/10.1007/978-3-319-90362-0_18.
Повний текст джерелаQuerlioz, Damien, Philippe Dollfus, and Mireille Mouis. "Particle-based Monte Carlo Approach to Wigner-Boltzmann Device Simulation." In The Wigner Monte Carlo Method for Nanoelectronic Devices, 57–88. Hoboken, NJ USA: John Wiley & Sons, Inc., 2013. http://dx.doi.org/10.1002/9781118618479.ch2.
Повний текст джерелаSaga, Koichiro, and Takeshi Hattori. "Wafer Cleaning Using Supercritical CO2 in Semiconductor and Nanoelectronic Device Fabrication." In Solid State Phenomena, 97–103. Stafa: Trans Tech Publications Ltd., 2007. http://dx.doi.org/10.4028/3-908451-46-9.97.
Повний текст джерелаJayalakshmi, R., and M. Senthil Kumaran. "Modeling of Potentially Implementable Configurable Logic Block in Quantum Dot Cellular Automata for Nanoelectronic Device Architecture." In Springer Proceedings in Materials, 611–17. Singapore: Springer Singapore, 2020. http://dx.doi.org/10.1007/978-981-15-6267-9_69.
Повний текст джерелаKuzmin, Andrey, Mathieu Luisier, and Olaf Schenk. "Fast Methods for Computing Selected Elements of the Green’s Function in Massively Parallel Nanoelectronic Device Simulations." In Euro-Par 2013 Parallel Processing, 533–44. Berlin, Heidelberg: Springer Berlin Heidelberg, 2013. http://dx.doi.org/10.1007/978-3-642-40047-6_54.
Повний текст джерелаRaushan, Mohd Adil, Naushad Alam, and Mohd Jawaid Siddiqui. "Emerging Nanoelectronic Devices." In Nanoelectronic Devices for Hardware and Software Security, 1–32. Boca Raton: CRC Press, 2021. http://dx.doi.org/10.1201/9781003126645-1.
Повний текст джерелаТези доповідей конференцій з теми "Nanoelectronic device"
NOVIK, E. G., I. V. SHEREMET, S. S. IVASHKEVICH, and I. I. ABRAMOV. "NANOELECTRONIC DEVICE SIMULATOR NANODEV." In Reviews and Short Notes to Nanomeeting '97. WORLD SCIENTIFIC, 1997. http://dx.doi.org/10.1142/9789814503938_0069.
Повний текст джерела"Nanoelectronic Devices II." In 2006 64th Device Research Conference. IEEE, 2006. http://dx.doi.org/10.1109/drc.2006.305076.
Повний текст джерелаHuo, Dennis, Qiaoyan Yu, and Paul Ampadu. "A ballistic nanoelectronic device simulator." In 2007 IEEE International Symposium on Nanoscale Architectures. IEEE, 2007. http://dx.doi.org/10.1109/nanoarch.2007.4400856.
Повний текст джерела"Solid State and Nanoelectronic Devices -- Novel Device Technologies." In 2006 International Electron Devices Meeting. IEEE, 2006. http://dx.doi.org/10.1109/iedm.2006.346981.
Повний текст джерелаCeze, L., J. Hasler, K. K. Likharev, J. s. Seo, T. Sherwood, D. Strukov, Y. Xie, and S. Yu. "Nanoelectronic neurocomputing: Status and prospects." In 2016 74th Annual Device Research Conference (DRC). IEEE, 2016. http://dx.doi.org/10.1109/drc.2016.7548506.
Повний текст джерелаRichter, Curt A., Joseph J. Kopanski, Chong Jiang, Yicheng Wang, M. Yaqub Afridi, Xiaoxiao Zhu, D. E. Ioannou, et al. "Advanced Capacitance Metrology for Nanoelectronic Device Characterization." In FRONTIERS OF CHARACTERIZATION AND METROLOGY FOR NANOELECTRONICS: 2009. AIP, 2009. http://dx.doi.org/10.1063/1.3251244.
Повний текст джерелаLuisier, M., and A. Szabo. "Paving the way for ultimate device scaling through nanoelectronic device simulations." In 2013 14th International Conference on Ultimate Integration on Silicon (ULIS 2013). IEEE, 2013. http://dx.doi.org/10.1109/ulis.2013.6523489.
Повний текст джерелаHan, Kyungsup, Yong-Jin Yoon, Jack Sheng Kee, and Mi Kyoung Park. "Enhancement of nanoelectronic sensor performance with microfluidic device." In 2013 IEEE International Nanoelectronics Conference (INEC). IEEE, 2013. http://dx.doi.org/10.1109/inec.2013.6465987.
Повний текст джерелаAbramov, I. I., A. L. Baranoff, I. A. Goncharenko, N. V. Kolomejtseva, Y. L. Bely, and I. Y. Shcherbakova. "A nanoelectronic device simulation software system NANODEV: new opportunities." In International Conference on Micro- and Nano-Electronics 2009, edited by Kamil A. Valiev and Alexander A. Orlikovsky. SPIE, 2009. http://dx.doi.org/10.1117/12.853521.
Повний текст джерелаZhou, Guanyu, Tian Sun, Rehan Younas, and Christopher L. Hinkle. "Materials and Device Strategies for Nanoelectronic 3D Heterogeneous Integration." In 2021 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD). IEEE, 2021. http://dx.doi.org/10.1109/sispad54002.2021.9592592.
Повний текст джерелаЗвіти організацій з теми "Nanoelectronic device"
Brinker, C. Jeffrey, Darren Robert Dunphy, Carlee E. Ashley, Hongyou Fan, DeAnna Lopez, Regina Lynn Simpson, David Robert Tallant, et al. Cell-directed assembly on an integrated nanoelectronic/nanophotonic device for probing cellular responses on the nanoscale. Office of Scientific and Technical Information (OSTI), January 2006. http://dx.doi.org/10.2172/883480.
Повний текст джерелаLiu, Jie, and Mark W. Grinstaff. DNA for the Assembly of Nanoelectronic Devices Biotechnology and Nanoelectronics. Fort Belvoir, VA: Defense Technical Information Center, April 2005. http://dx.doi.org/10.21236/ada433496.
Повний текст джерелаRodriguez, Rene, Joshua Pak, Andrew Holland, Alan Hunt, Thomas Bitterwolf, You Qiang, Leah Bergman, Christine Berven, Alex Punnoose, and Dmitri Tenne. Incorporation of Novel Nanostructured Materials into Solar Cells and Nanoelectronic Devices. Office of Scientific and Technical Information (OSTI), November 2011. http://dx.doi.org/10.2172/1029119.
Повний текст джерелаWaitz, Anthony, Jerzy Bernholc, and Kurt Stokbro. Tools for Modeling & Simulation of Molecular and Nanoelectronics Devices. Fort Belvoir, VA: Defense Technical Information Center, June 2012. http://dx.doi.org/10.21236/ada577319.
Повний текст джерелаAjayan, Pulickel M. Scaled up Fabrication of High-Throughout SWNT Nanoelectronics and Nanosensor Devices. Fort Belvoir, VA: Defense Technical Information Center, April 2007. http://dx.doi.org/10.21236/ada482306.
Повний текст джерелаHam, Donhee, Xiaofeng Li, and William Andress. Nanoelectronic Initiative - GHz & THz Amplifier and Oscillator Circuits With ID Nanoscale Devices for Multispectral Heterodyning Detector Arrays. Fort Belvoir, VA: Defense Technical Information Center, October 2009. http://dx.doi.org/10.21236/ada510610.
Повний текст джерела