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Опубліковано: 6 вересня 2023

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Статті в журналах з теми "Millimeter-Wave Circuit Design"

1

Shigematsu, H., T. Hirose, F. Brewer, and M. Rodwell. "Millimeter-wave CMOS circuit design." IEEE Transactions on Microwave Theory and Techniques 53, no. 2 (February 2005): 472–77. http://dx.doi.org/10.1109/tmtt.2004.840758.

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2

Tatu, Serioja Ovidiu, and Emilia Moldovan. "Millimeter Wave Multi-Port Interferometric Radar Sensors: Evolution of Fabrication and Characterization Technologies." Sensors 20, no. 19 (September 24, 2020): 5477. http://dx.doi.org/10.3390/s20195477.

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Анотація:
Recent advances in millimeter wave technologies, both in component and system design, in line with important size and cost reductions, have opened up new applications in ultra-high-speed wireless communications, radar and imaging sensors. The paper presents the evolution of millimeter wave circuit and modules fabrication and characterization technologies in the past decades. Novel planar low-cost fabrication technologies have been successfully developed in this period. In combination with the standard rectangular wave-guide technology, these offer great opportunities for prototyping and testing of future millimeter wave transceivers or front-ends, which integrate antenna arrays, down-converters, modulators, amplifiers, etc., in a compact fixture. The paper uses, as a suggestive example, the evolution of the multi-port interferometric front-ends implementation from millimeter wave bulky components and systems to miniaturized and high-efficient ones. Circuit and system designs are carefully done to avoid (as much as possible) complicated calibration methods or difficult post-processing of baseband data. This requires an increased effort in design and fabrication, but it allows miniaturization, low-power consumption, while keeping very good overall performances. Useful and straightforward laboratory characterization techniques of circuits and systems are described in detail.
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3

Ragonese, Egidio. "Design Techniques for Low-Voltage RF/mm-Wave Circuits in Nanometer CMOS Technologies." Applied Sciences 12, no. 4 (February 17, 2022): 2103. http://dx.doi.org/10.3390/app12042103.

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This paper reviews state-of-the-art design approaches for low-voltage radio frequency (RF) and millimeter-wave (mm-wave) CMOS circuits. Effective design techniques at RF/mm-wave frequencies are described, including body biasing in fully depleted (FD) silicon-on-insulator (SOI) CMOS technologies and circuit topologies based on integrated reactive components (i.e., capacitors, inductors and transformers). The application of low-voltage design techniques is discussed for the main RF/mm-wave circuit blocks, i.e., low-noise amplifiers (LNAs), mixers and power amplifiers (PAs), highlighting the main design tradeoffs.
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4

Habibpour, Omid, Wlodzimierz Strupinski, Niklas Rorsman, Pawel Ciepielewski, and Herbert Zirath. "Generic Graphene Based Components and Circuits for Millimeter Wave High Data-rate Communication Systems." MRS Advances 2, no. 58-59 (2017): 3559–64. http://dx.doi.org/10.1557/adv.2017.433.

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ABSTRACT We are developing millimeter wave (mm-wave) components and circuits based on hydrogen-intercalated graphene. The development covers epitaxial graphene growth, device fabrication, modelling, integrated circuit design and fabrication, and circuit characterizations. The focus of our work is to utilize the distinctive graphene properties and realize new components that can overcome some of the main challenges of existing mm-wave technologies in term of linearity.
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5

Moldovan, Emilia, Nazih Khaddaj Mallat, and Serioja Ovidiu Tatu. "MHMIC Six-port Interferometer for W-band Transceivers: Design and Characterization." International Journal of Electrical and Computer Engineering (IJECE) 9, no. 4 (August 1, 2019): 2703. http://dx.doi.org/10.11591/ijece.v9i4.pp2703-2714.

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The study has presented an extensive analysis of an integrated millimeter wave six-port interferometer, operating over a 10 GHz band, from 80 to 90 GHz. It has covered both semi-unlicensed point-to-point links (81-86 GHz), and imaging sensor system frequencies (above 85 GHz). An in-house process is used to fabricate miniaturized hybrid millimeter wave integrated circuits on a very thin ceramic substrate. Two-port S-parameter measurements are performed on a minimum number of circuits integrated on the same die, exploiting the circuit’s physical symmetry and chosen to collect enough data for full-port characterization. Based on these measurements on an integrated prototype, a six-port circuit computer model implemented and advanced system simulations performed for circuit analysis. Interferometer performances evaluated using several methods: analysis of harmonic balance, qi points’, homodyne quadrature demodulation, and error vector modulation (EVM). The analysis showed that this circuit can directly perform, without any calibration, the demodulation of various PSK and QAM signals over the 10 GHz band, with very good results.
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Plouchart, J. O., Benjamin Parker, Bodhisatwa Sadhu, Alberto Valdes-Garcia, Daniel Friedman, Mihai Sanduleanu, Fa Wang, Xin Li, and Andreea Balteanu. "Adaptive Circuit Design Methodology and Test Applied to Millimeter-Wave Circuits." IEEE Design & Test 31, no. 6 (December 2014): 8–18. http://dx.doi.org/10.1109/mdat.2014.2343192.

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Labadie, Iris. "Advanced Ceramic Structures and Materials for High-Reliability Millimeter-Wave Applications." Additional Conferences (Device Packaging, HiTEC, HiTEN, and CICMT) 2011, CICMT (September 1, 2011): 000182–85. http://dx.doi.org/10.4071/cicmt-2011-wa22.

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Анотація:
Semiconductor device speeds and circuit operating frequencies have increased substantially over the past decade. Although millimeter-wave technology has been around for over 100 years, it is only within the past 5–10 years that increased demand for millimeter-wave commercial products and services has driven the development of new electronic package designs, low-loss materials, and the transformation of passive components to integrated and smaller geometries. High-reliability applications have employed millimeter-waves for several decades, but typically utilized heavy materials and distributed architectures. The transition of high-reliability millimeter-wave applications to new materials such as low-temperature co-fired ceramics requires innovative package designs to achieve comparable or better electrical performance in a much smaller form factor. Ceramic packaging technology continues to meet or exceed the performance requirements of high-reliability millimeter-wave applications with a broadened portfolio of material sets and innovative internal circuit components such as filter banks, antennas, and waveguides. Today's ceramic package design techniques and materials for applications within current and future high-reliability millimeter-wave markets will be discussed.
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Zhang, Bo, Yong-Zhong Xiong, Lei Wang, Sanming Hu, and Joshua Le-Wei Li. "On the De-Embedding Issue of Millimeter-Wave and Sub-Millimeter-Wave Measurement and Circuit Design." IEEE Transactions on Components, Packaging and Manufacturing Technology 2, no. 8 (August 2012): 1361–69. http://dx.doi.org/10.1109/tcpmt.2012.2200482.

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9

Thrasher, Bradley, Deepukumar Nair, James Parisi, Glenn Oliver, and Michael A. Smith. "Bulk and In-Circuit Dielectric Characterization of LTCC Tape Systems Through Millimeter Wave Frequency Range." International Symposium on Microelectronics 2011, no. 1 (January 1, 2011): 000740–46. http://dx.doi.org/10.4071/isom-2011-wp3-paper2.

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Анотація:
Low Temperature Co-fired Ceramic (LTCC) material systems offer a highly versatile microwave and millimeter wave packaging platform. Extremely low microwave loss, excellent control of dielectric constant, uniform dielectric thickness, non-existent water absorption leading to very high hermeticity, ability to support multilayer structure leading to 3-dimensional packaging, ability to embed passive functions within the tape layers, availability of a wide range of metallizations, etc. are some of the key advantages of LTCC for microwave packaging. One of the important parameters which needs to be determined at the very early stages of circuit designs are the dielectric properties - dielectric constant and loss tangent, both of which are functions of frequency. These properties need to be known accurately over the entire frequency range of operation for the circuit. For LTCC based designs, the use of dielectric constant of bulk material can lead to deviations between the performance expected at the design stage and for the fabricated circuit. Such deviations are a significant concern for broadband circuits as well as for circuits with sharp resonant behavior such as filters. One of the significant sources of deviation between bulk LTCC and “in-circuit” dielectric constant is the nature of the thick film metallizations used in LTCC technology. Work described here is a comprehensive characterization of three DuPont™ GreenTape™ LTCC systems 951, 943, and 9K7 - in the frequency range 10 to 70 GHz. Both bulk and “in-circuit” dielectric properties with silver and gold metallizations are studied to quantify the deviations in dielectric properties. A Fabry-Perot open resonator technique is used for the bulk characterization while printed ring resonators are used for the in-circuit characterization. This comprehensive characterization will provide key design data for LTCC designers in the 10 – 70 GHz frequency range.
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Kassa, Wosen-Eshetu, Anne-Laure Billabert, Salim Faci, and Catherine Algani. "Simulation of heterodyne RoF systems based on 2 DFB lasers: application to an optical phase-locked loop design." International Journal of Microwave and Wireless Technologies 6, no. 2 (February 19, 2014): 207–11. http://dx.doi.org/10.1017/s1759078714000117.

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This paper presents a simulation approach of optical heterodyne systems by using the equivalent circuit representation of a distributed feedback laser (DFB) in the electrical domain. Since the electrical representation of the DFB laser is developed from the rate equations, its characteristics such as non-linearity, relative intensity noise (RIN), and phase noise can be predicted precisely for various biasing conditions. The model is integrated in a heterodyne radio over fiber (RoF) system where two DFB lasers are used to generate a millimeter-wave (mm-wave) signal. An optical phase-locked loop is also introduced to reduce the phase noise on the mm-wave signal. The optical phase noise contribution of individual lasers to the mm-wave signal is evaluated and compared with theoretical results. It is shown that the phase noise of the mm-wave is reduced considerably depending on the loop bandwidth and propagation delay. With the circuit simulation approach proposed, optical and mm-wave phase noises can be studied together with other circuit environments such as parasitic effects and driver circuits.
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Дисертації з теми "Millimeter-Wave Circuit Design"

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Song, Peter. "Millimeter-wave integrated circuit design in silicon-germanium technology for next generation radars." Thesis, Georgia Institute of Technology, 2014. http://hdl.handle.net/1853/53450.

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Анотація:
In this thesis, the circuits which comprise the front-end of a millimeter-wave transmit-receive module are investigated using a state-of-the-art 90 nm SiGe BiCMOS process for use in radar remote sensing applications. In Chapter I, the motivation for a millimeter-wave radar in the context of space-based remote sensing is discussed. In addition, an overview of Silicon-germanium technology is presented, and the chapter concludes with a discussion of design challenges at millimeter-wave frequencies. In Chapter II, a brief history of radar technology is presented - the motivations leading to the development of the transmit-receive module for active electronically scanned arrays are discussed, and the critical components which reside in nearly every high-frequency transmit-receive module are introduced. In Chapter III, the design and results of a W-band single-pole, double-throw switch using SiGe p-i-n diodes are discussed. In particular, the design topology and methods used to achieve low-loss and high power handling over a wide matching bandwidth without sacrificing isolation are described. In Chapter IV, the design and results of a W-band low-noise amplifier using SiGe HBT's are discussed. The design methodologies used to achieve high gain and exceptional noise performance over a wide matching bandwidth are described. Concluding remarks and a discussion of future work are in Chapter V.
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2

Lauterbach, Adam Peter. "Low-cost SiGe circuits for frequency synthesis in millimeter-wave devices." Australia : Macquarie University, 2010. http://hdl.handle.net/1959.14/76626.

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Анотація:
"2009"
Thesis (MSc (Hons))--Macquarie University, Faculty of Science, Dept. of Physics and Engineering, 2010.
Bibliography: p. 163-166.
Introduction -- Design theory and process technology -- 15GHz oscillator implementations -- 24GHz oscillator implementation -- Frequency prescaler implementation -- MMIC fabrication and measurement -- Conclusion.
Advances in Silicon Germanium (SiGe) Bipolar Complementary Metal Oxide Semiconductor (BiCMOS) technology has caused a recent revolution in low-cost Monolithic Microwave Integrated Circuit (MMIC) design. -- This thesis presents the design, fabrication and measurement of four MMICs for frequency synthesis, manufactured in a commercially available IBM 0.18μm SiGe BiCMOS technology with ft = 60GHz. The high speed and low-cost features of SiGe Heterojunction Bipolar Transistors (HBTs) were exploited to successfully develop two single-ended injection-lockable 15GHz Voltage Controlled Oscillators (VCOs) for application in an active Ka-Band antenna beam-forming network, and a 24GHz differential cross-coupled VCO and 1/6 synchronous static frequency prescaler for emerging Ultra Wideband (UWB) automotive Short Range Radar (SRR) applications. -- On-wafer measurement techniques were used to precisely characterise the performance of each circuit and compare against expected simulation results and state-of-the-art performance reported in the literature. -- The original contributions of this thesis include the application of negative resistance theory to single-ended and differential SiGe VCO design at 15-24GHz, consideration of manufacturing process variation on 24GHz VCO and prescaler performance, implementation of a fully static multi-stage synchronous divider topology at 24GHz and the use of differential on-wafer measurement techniques. -- Finally, this thesis has llustrated the excellent practicability of SiGe BiCMOS technology in the engineering of high performance, low-cost MMICs for frequency synthesis in millimeterwave (mm-wave) devices.
Mode of access: World Wide Web.
xxii, 166 p. : ill (some col.)
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3

Choi, Man Soo. "Computer-aided design models for millimeter-wave suspended-substrate microstrip line." Thesis, Monterey, California : Naval Postgraduate School, 1990. http://handle.dtic.mil/100.2/ADA227259.

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Анотація:
Thesis (M.S. in Electrical Engineering)--Naval Postgraduate School, March 1990.
Thesis Advisor(s): Atwater, H.A. Second Reader: Lee, H. M. "March 1990." Description based on signature page as viewed on August 26, 2009. DTIC Descriptor(s): Strip Transmission Lines, Computer Aided Design, Computerized Simulation, Parameters, Microwave Equipment, Radar, Full Wave Rectifiers, Transmittance, Resonant Frequency, Construction, Wave Propagation, Coefficients, Boundary Value Problems, Resonators, Circuits, Discontinuities, Ka Band, Models, Scattering, Equivalent Circuits, Frequency. Author(s) subject terms: Millimeter wave, suspended substrate, design model. Includes bibliographical references (p. 78-79). Also available online.
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4

Severino, Raffaele Roberto. "Design methodology for millimeter wave integrated circuits : application to SiGe BiCMOS LNAs." Thesis, Bordeaux 1, 2011. http://www.theses.fr/2011BOR14284/document.

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Анотація:
Grace aux récents développements des technologies d’intégration, il est aujourd’hui possible d’envisager la réalisation de circuits et systèmes intégrés sur Silicium fonctionnant à des fréquences auparavant inatteignables. Par conséquence, depuis quelques années, on assiste à la naissance de nouvelles applications en bande millimétrique, comme la communication sans fil à haut-débit à 60GHz, les radars automobiles à 76-77 et 79-82GHz, et l’imagerie millimétrique à 94GHz.Cette thèse vise, en premier lieu, à la définition d’une méthodologie de conception des circuits intégrés en bande millimétrique. Elle est par la suite validée au travers de son application à la conception des amplificateurs faible-bruit en technologie BiCMOS SiGe. Dans ce contexte, une attention particulière a été portée au développement d’une stratégie de conception et de modélisation des inductances localisées. Plusieurs exemples d’amplificateurs faible-bruit ont été réalisés, à un ou deux étages, employant des composants inductifs localisés ou distribués, à 60, 80 et 94 GHz. Tous ces circuits présentent des caractéristiques au niveau de l’état de l’art dans le domaine, ainsi en confirmant l’exactitude de la méthodologie de conception et son efficacité sur toute la planche de fréquence considérée. En outre, la réalisation d’un récepteur intégré pour applications automobiles à 80GHz est aussi décrite comme exemple d’une possible application système, ainsi que la co-intégration d’un amplificateur faible-bruit avec une antenne patch millimétrique intégrée sur Silicium
The interest towards millimeter waves has rapidly grown up during the last few years, leading to the development of a large number of potential applications in the millimeter wave band, such as WPANs and high data rate wireless communications at 60GHz, short and long range radar at 77-79GHz, and imaging systems at 94GHz.Furthermore, the high frequency performances of silicon active devices (bipolar and CMOS) have dramatically increased featuring both fT and fmax close or even higher than 200GHz. As a consequence, modern silicon technologies can now address the demand of low-cost and high-volume production of systems and circuits operating within the millimeter wave range. Nevertheless, millimeter wave design still requires special techniques and methodologies to overcome a large number of constraints which appear along with the augmentation of the operative frequency.The aim of this thesis is to define a design methodology for integrated circuits operating at millimeter wave and to provide an experimental validation of the methodology, as exhaustive as possible, focusing on the design of low noise amplifiers (LNAs) as a case of study.Several examples of LNAs, operating at 60, 80, and 94 GHz, have been realized. All the tested circuits exhibit performances in the state of art. In particular, a good agreement between measured data and post-layout simulations has been repeatedly observed, demonstrating the exactitude of the proposed design methodology and its reliability over the entire millimeter wave spectrum. A particular attention has been addressed to the implementation of inductors as lumped devices and – in order to evaluate the benefits of the lumped design – two versions of a single-stage 80GHz LNA have been realized using, respectively, distributed transmission lines and lumped inductors. The direct comparison of these circuits has proved that the two design approaches have the same potentialities. As a matter of fact, design based on lumped inductors instead of distributed elements is to be preferred, since it has the valuable advantage of a significant reduction of the circuit dimensions.Finally, the design of an 80GHz front-end and the co-integration of a LNA with an integrated antenna are also considered, opening the way to the implementation a fully integrated receiver
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5

Lämmle, Benjamin [Verfasser]. "Design and Applications of Integrated Millimeter-Wave Six-Port Circuits / Benjamin Lämmle." München : Verlag Dr. Hut, 2012. http://d-nb.info/1028784112/34.

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Hwang, Seunghyun Eddy. "Characterization and design of embedded passive circuits for applications up to millimeter-wave frequency." Diss., Georgia Institute of Technology, 2011. http://hdl.handle.net/1853/41146.

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Анотація:
The goal of the research in this dissertation is to develop techniques for 1) system-on-package integration of passive circuits using ultra-thin advanced polymers called RXP (Rogers experimental polymer), 2) extraction of frequency-dependent material properties up to millimeter-wave frequency, 3) development and synthesis of high-rejection filter topologies, 4) design and characterization of high performance miniaturized embedded passive circuits for microwave and millimeter-wave applications, and 5) development of via and through-silicon via (TSV) enhanced filter design method for integration in high-loss substrate. The RXP material is developed to reduce the layer-count for multi-layer configuration and adoption of advanced fabrication technologies. Frequency-dependent material properties of RXP, ceramic, and other materials have been extracted up to millimeter-wave frequency using parallel-plate resonator method. An automated extraction algorithm has been proposed to handle a large number of frequency samples efficiently. The accuracy of the extraction result has been improved by including the surface roughness effect for conductor operating at high frequency. Using extracted RXP material properties, 2.4/5 GHz WLAN bandpass filters have been designed and characterized. High-rejection bandpass filter topologies for narrow 2.4 GHz and wide 5 GHz have been proposed. The proposed topologies have been synthesized to provide design equations as well as graphical design methodologies using Z-parameters. A new capacitor design called 3D stitched capacitor has been proposed to achieve more symmetric layout by providing balanced shunt parasitics. The proposed topologies and design methodologies have been verified through the measurement of high-rejection RXP bandpass filters. Good correlation between the simulation and measurement was observed demonstrating an effective design methodology and embedding bandpass filters with good performance. Dual-band bandpass filters for WLAN applications have been implemented and measured. Instead of connecting two bandpass filter circuits, a new single bandpass filter topology has been developed with a compact size as well as high isolation between passbands. High-rejection duplexer has been designed in RXP substrate for chip-last embedded IC technology, and a novel matching circuit has been applied for the miniaturization as well. The 60 GHz V-band has special interest for wireless applications because of its high attenuation characteristics because of atmospheric oxygen. Millimeter-wave passive circuits such as bandpass filter, dual-band filter, and duplexer have been designed, and self-resonant frequency of passive components has been carefully avoided using the proposed method. For low-cost system integration, silicon interposer with through-silicon-via (TSV) technology has been studied. The filter design method for high-loss substrate has been proposed. The coupling characteristic of TSV has been investigated for obtaining good insertion loss in lossy substrates such as silicon, and TSV characteristics has been used to design bandpass and highpass filters. To demonstration of concept, bandpass filters with good insertion loss have been realized on high-loss FR4 substrate.
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7

Sen, Padmanava. "Estimation and optimization of layout parasitics for silicon-based millimeter-wave integrated circuits." Diss., Atlanta, Ga. : Georgia Institute of Technology, 2007. http://hdl.handle.net/1853/26585.

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Анотація:
Thesis (Ph.D)--Electrical and Computer Engineering, Georgia Institute of Technology, 2008.
Committee Chair: Dr. Joy Laskar; Committee Member: Dr. Chang- Ho Lee; Committee Member: Dr. Federico Bonetto; Committee Member: Dr. John D. Cressler; Committee Member: Dr. John Papapolymerou; Committee Member: Dr. Linda S. Milor. Part of the SMARTech Electronic Thesis and Dissertation Collection.
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8

Kim, Jihwan. "High performance radio-frequency and millimeter-wave front-end integrated circuits design in silicon-based technologies." Diss., Georgia Institute of Technology, 2011. http://hdl.handle.net/1853/44704.

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Анотація:
Design techniques and procedures to improve performances of radio-frequency and millimeter-wave front-end integrated circuits were developed. Power amplifiers for high data-rate wireless communication applications were designed using CMOS technology employing a novel device resizing and concurrent power-combining technique to implement a multi-mode operation. Comprehensive analysis on the efficiency degradation effect of multi-input-single-output combining transformers with idle input terminals was performed. The proposed discrete resizing and power-combining technique effectively enhanced the efficiency of a linear CMOS power amplifier at back-off power levels. In addition, a novel power-combining transformer that is suitable to generate multi-watt-level output power was proposed and implemented. Employing the proposed power-combining transformer, a high-power linear CMOS power amplifier was designed. Furthermore, receiver building blocks such as a low-noise amplifier, a down-conversion mixer, and a passive balun were implemented using SiGe technology for W-band applications.
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9

Pepe, Domenico. "Deep sub-micron RF-CMOS design and applications of modern UWB and millimeter-wave wireless transceivers." Thesis, Bordeaux 1, 2009. http://www.theses.fr/2009BOR13815/document.

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Анотація:
L'activité de recherche scientifique effectuée dans le cadre de mon doctorat de sciences s'est déroulée dans le secteur de la conception de circuits intégrés radiofréquences pour des systèmes ultra-wideband (UWB) et aux ondes millimétriques, et s'est articulée comme suit: (i) circuits intégrés radiofréquences pour émetteur-récepteurbasse puissance pour réseaux locaux wireless; (ii) radar UWB complètement intégré pour la surveillance cardio-pulmonaire en technologie 90nm CMOS; (iii) amplificateurs faible bruit (LNA) à 60 GHz en technologie standard 65nm CMOS
The research activity carried out during this PhD consists on the design of radio- frequency integrated circuits, for ultra-wideband (UWB) and millimeter-wave sys- tems, and covers the following topics: (i) radio-frequency integrated circuits for low-power transceivers for wireless local networks; (ii) fully integrated UWB radar for cardio-pulmonary monitoring in 90nm CMOS technology; (iii) 60-GHz low noise amplifer (LNA) in 65nm CMOS technology
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10

Thompson, Dane C. "Characterization and Design of Liquid Crystal Polymer (LCP) Based Multilayer RF Components and Packages." Diss., Georgia Institute of Technology, 2006. http://hdl.handle.net/1853/10498.

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Анотація:
This thesis discusses the investigation and utilization of a new promising thin-film material, liquid crystal polymer (LCP), for microwave and millimeter-wave (mm-wave [>30 GHz]) components and packages. The contribution of this research is in the determination of LCP's electrical and mechanical properties as they pertain to use in radio frequency (RF) systems up to mm-wave frequencies, and in evaluating LCP as a low-cost substrate and packaging material alternative to the hermetic materials traditionally desired for microwave circuits at frequencies above a few gigahertz (GHz). A study of LCP's mm-wave material properties was performed. Resonant circuit structures were designed to find the dielectric constant and loss tangent from 2-110 GHz under both ambient and elevated temperature conditions. Several unique processes were developed for the realization of novel multilayer LCP-based RF circuits. These processes include thermocompression bonding with tight temperature control (within a few degrees Celsius), precise multilayer alignment and patterning, and LCP laser processing with three different types of lasers. A proof-of-concept design that resulted from this research was a dual-frequency dual-polarization antenna array operating at 14 and 35 GHz. Device characterization such as mechanical flexibility testing of antennas and seal testing of packages were also performed. A low-loss interconnect was developed for laser-machined system-level thin-film LCP packages. These packages were designed for and measured with both RF micro-electromechanical (MEM) switches and monolithic microwave integrated circuits (MMICs). These research findings have shown LCP to be a material with uniquely attractive properties/capabilities for vertically integrated, compact multilayer LCP circuits and modules.
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Книги з теми "Millimeter-Wave Circuit Design"

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Georgiadis, Apostolos. Microwave and millimeter wave circuits and systems: Emerging design, technologies, and applications. Chichester, West Sussex: John Wiley & Sons, 2012.

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2

D, Wilson Jeffrey, and United States. National Aeronautics and Space Administration., eds. Novel high-gain, improved-bandwidth, finned-ladder V-band traveling-wave tube slow-wave circuit design. [Washington, DC]: National Aeronautics and Space Administration, 1995.

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3

D, Wilson Jeffrey, and United States. National Aeronautics and Space Administration., eds. Novel high-gain, improved-bandwidth, finned-ladder V-band traveling-wave tube slow-wave circuit design. [Washington, DC]: National Aeronautics and Space Administration, 1995.

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4

D, Wilson Jeffrey, and United States. National Aeronautics and Space Administration., eds. Novel high-gain, improved-bandwidth, finned-ladder V-band traveling-wave tube slow-wave circuit design. [Washington, DC]: National Aeronautics and Space Administration, 1995.

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5

D, Wilson Jeffrey, and United States. National Aeronautics and Space Administration., eds. Novel high-gain, improved-bandwidth, finned-ladder V-band traveling-wave tube slow-wave circuit design. [Washington, DC]: National Aeronautics and Space Administration, 1995.

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6

D, Wilson Jeffrey, and United States. National Aeronautics and Space Administration., eds. Novel high-gain, improved-bandwidth, finned-ladder V-band traveling-wave tube slow-wave circuit design. [Washington, DC]: National Aeronautics and Space Administration, 1995.

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7

K, Sharma Arvind, and Itoh Tatsuo, eds. Modeling and design of coplanar monolithic microwave and millimeter-wave integrated circuits. New York: IEEE, 1993.

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8

Minoru, Fujishima, ed. Design and modeling of millimeter-wave CMOS circuits for wireless transceivers: Era of sub-100nm technology. Dordrecht: Springer Science+Business Media, 2008.

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9

RF integrated circuits in VLSI SOI CMOS technology for wireless receivers at millimeter wave frequencies. Konstanz: Hartung-Gorre Verlag, 2005.

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10

Kissinger, Dietmar. Millimeter-Wave Receiver Concepts for 77 GHz Automotive Radar in Silicon-Germanium Technology. Boston, MA: Springer US, 2012.

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Частини книг з теми "Millimeter-Wave Circuit Design"

1

Božanić, Mladen, and Saurabh Sinha. "Methodologies for Millimeter-Wave Circuit Design." In Lecture Notes in Electrical Engineering, 113–64. Cham: Springer International Publishing, 2020. http://dx.doi.org/10.1007/978-3-030-44398-6_4.

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Sanduleanu, Mihai A. T., Eduardo Alarcon, Hammad M. Cheema, Maja Vidojkovic, Reza Mahmoudi, and Arthur H. M. Van Roermund. "Key Building Blocks for Millimeter-Wave IC Design in Baseline CMOS." In Analog Circuit Design, 259–82. Dordrecht: Springer Netherlands, 2008. http://dx.doi.org/10.1007/978-1-4020-8263-4_13.

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3

Božanić, Mladen, and Saurabh Sinha. "Methodologies for Millimeter-Wave Circuit Design in Extreme Environments." In Lecture Notes in Electrical Engineering, 165–96. Cham: Springer International Publishing, 2020. http://dx.doi.org/10.1007/978-3-030-44398-6_5.

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Curow, Matthias. "Design and Optimization of Millimeter-Wave IMPATT Oscillators Using a Consistent Model for Active and Passive Circuit Parts." In Simulation of Semiconductor Devices and Processes, 250–53. Vienna: Springer Vienna, 1995. http://dx.doi.org/10.1007/978-3-7091-6619-2_60.

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Jang, Eui-Hoon, Young-Bae Park, Bo-Ra Jung, Jang-Hyeon Jeong, Jeong-Gab Ju, and Young Yun. "Equivalent Circuit Model of Comb-type Capacitive Transmission Line on MMIC for Application to the RF Component Design in Millimeter-Wave Wireless Communication System." In Electrical Engineering and Control, 1071–77. Berlin, Heidelberg: Springer Berlin Heidelberg, 2011. http://dx.doi.org/10.1007/978-3-642-21765-4_133.

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del Rio, David, Ainhoa Rezola, Juan F. Sevillano, Igone Velez, and Roc Berenguer. "Design Methodology for BiCMOS Millimeter-Wave Integrated Circuits." In Analog Circuits and Signal Processing, 117–33. Cham: Springer International Publishing, 2018. http://dx.doi.org/10.1007/978-3-319-93281-1_5.

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Dinc, Tolga, and Harish Krishnaswamy. "Millimeter-wave Full-Duplex Wireless: Circuits and Systems." In IC Design Insights - from Selected Presentations at CICC 2017, 61–99. New York: River Publishers, 2022. http://dx.doi.org/10.1201/9781003338499-3.

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8

Cathelin, Andreia. "Body-Biasing in FD-SOI for Analog, RF, and Millimeter-Wave Designs." In Integrated Circuits and Systems, 85–92. Cham: Springer International Publishing, 2020. http://dx.doi.org/10.1007/978-3-030-39496-7_4.

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9

del Rio, David, Ainhoa Rezola, Juan F. Sevillano, Igone Velez, and Roc Berenguer. "Design of Wideband Millimeter-Wave Power Detectors to Enable Self-healing and Digital Correction Capabilities." In Analog Circuits and Signal Processing, 213–30. Cham: Springer International Publishing, 2018. http://dx.doi.org/10.1007/978-3-319-93281-1_8.

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10

Das, N. K., N. Herscovici, G. Kwan, and D. M. Bolle. "Multilayer Integration of Microwave and Millimeter-Wave Circuits: New Interconnect Methods and Design Considerations." In Directions for the Next Generation of MMIC Devices and Systems, 83–95. Boston, MA: Springer US, 1997. http://dx.doi.org/10.1007/978-1-4899-1480-4_11.

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Тези доповідей конференцій з теми "Millimeter-Wave Circuit Design"

1

Houshmand, B., and Tatsuo Itoh. "Future of electromagnetics for millimeter-wave circuit design." In Critical Review Collection. SPIE, 1994. http://dx.doi.org/10.1117/12.194296.

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2

Perez-Moreno, Carlos G., Jesus Grajal, and Diego Pardo. "Electro-thermal modelling for millimeter-wave circuit design." In 2013 38th International Conference on Infrared, Millimeter, and Terahertz Waves (IRMMW-THz 2013). IEEE, 2013. http://dx.doi.org/10.1109/irmmw-thz.2013.6665467.

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3

Fujimoto, R., T. Mitomo, H. Hoshino, and Y. Yoshihara. "CMOS Circuit Design Techniques for Millimeter-wave Applications." In 2009 International Conference on Solid State Devices and Materials. The Japan Society of Applied Physics, 2009. http://dx.doi.org/10.7567/ssdm.2009.c-2-3.

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4

Pi, Chu. "A Novel Compact Millimeter-wave Circuit-antenna Design." In 2023 6th International Conference on Electronics Technology (ICET). IEEE, 2023. http://dx.doi.org/10.1109/icet58434.2023.10212001.

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5

Limiti, Ernesto, and Paul Tasker. "Session III: Nonlinear circuit design." In 2010 Workshop on Integrated Nonlinear Microwave and Millimeter-Wave Circuits. IEEE, 2010. http://dx.doi.org/10.1109/inmmic.2010.5480144.

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Fujishima, Minoru. "Millimeter-wave and terahertz CMOS design." In 2012 IEEE 11th International Conference on Solid-State and Integrated Circuit Technology (ICSICT). IEEE, 2012. http://dx.doi.org/10.1109/icsict.2012.6467820.

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7

Rieh, Jae-Sung, and Sooyeon Kim. "Technology and design considerations for millimeter-wave circuits." In 2008 9th International Conference on Solid-State and Integrated-Circuit Technology (ICSICT). IEEE, 2008. http://dx.doi.org/10.1109/icsict.2008.4734812.

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8

Fan, Guoqing, Aiying Zhao, Qiliang Li, and Shibin Zhang. "Design of a Ultra-Wideband Passive Combining Circuit." In 2018 International Conference on Microwave and Millimeter Wave Technology (ICMMT). IEEE, 2018. http://dx.doi.org/10.1109/icmmt.2018.8563471.

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Hasani, Javad Yavand, Mahmoud Kamarei, and Fabien Ndagijimana. "Inductor Design and Optimization for Millimeter Wave Integrated Circuit Applications." In 2007 IEEE 18th International Symposium on Personal, Indoor and Mobile Radio Communications. IEEE, 2007. http://dx.doi.org/10.1109/pimrc.2007.4394378.

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10

Johansen, Tom K., Viktor Krozer, Jens Vidkjaer, Dzenan Hadziabdic, and Torsten Djurhuus. "Millimeter-Wave Integrated Circuit Design for Wireless and Radar Applications." In 2006 NORCHIP. IEEE, 2006. http://dx.doi.org/10.1109/norchp.2006.329222.

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Звіти організацій з теми "Millimeter-Wave Circuit Design"

1

Steer, Michael B. Circuit Level Modeling and Computer Aided Design Tools for Millimeter-Wave Quasi-Optical Systems. Fort Belvoir, VA: Defense Technical Information Center, December 1995. http://dx.doi.org/10.21236/ada304148.

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2

Ku, Walter H. Computer Aided Design of Monolithic Microwave and Millimeter Wave Integrated Circuits and Subsystems. Fort Belvoir, VA: Defense Technical Information Center, May 1989. http://dx.doi.org/10.21236/ada213656.

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3

Ku, Walter H. Computer Aided Design of Monolithic Microwave and Millimeter Wave Integrated Circuits and Subsystems. Fort Belvoir, VA: Defense Technical Information Center, August 1987. http://dx.doi.org/10.21236/ada191593.

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4

Ku, Walter H., Guan-Wu Wang, J. Q. He, and I. Ichitsubo. Computer Aided Design of Monolithic Microwave and Millimeter Wave Integrated Circuits and Subsystems. Fort Belvoir, VA: Defense Technical Information Center, May 1988. http://dx.doi.org/10.21236/ada196760.

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