Готові списки джерел за темами / Metal oxide semiconductors, Complementary Design and construction

Добірка наукової літератури з теми "Metal oxide semiconductors, Complementary Design and construction"

Автор: Grafiati

Опубліковано: 4 червня 2021

Оновлено: 1 лютого 2022

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Статті в журналах з теми "Metal oxide semiconductors, Complementary Design and construction":

Sotner, Roman, Jan Jerabek, Ladislav Polak, Roman Prokop, and Vilem Kledrowetz. "Integrated Building Cells for a Simple Modular Design of Electronic Circuits with Reduced External Complexity: Performance, Active Element Assembly, and an Application Example." Electronics 8, no. 5 (May 22, 2019): 568. http://dx.doi.org/10.3390/electronics8050568.

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This paper introduces new integrated analog cells fabricated in a C035 I3T25 0.35-μm ON Semiconductor process suitable for a modular design of advanced active elements with multiple terminals and controllable features. We developed and realized five analog cells on a single integrated circuit (IC), namely a voltage differencing differential buffer, a voltage multiplier with current output in full complementary metal–oxide–semiconductor (CMOS) form, a voltage multiplier with current output with a bipolar core, a current-controlled current conveyor of the second generation with four current outputs, and a single-input and single-output adjustable current amplifier. These cells (sub-blocks of the manufactured IC device), designed to operate in a bandwidth of up to tens of MHz, can be used as a construction set for building a variety of advanced active elements, offering up to four independently adjustable internal parameters. The performances of all individual cells were verified by extensive laboratory measurements, and the obtained results were compared to simulations in the Cadence IC6 tool. The definition and assembly of a newly specified advanced active element, namely a current-controlled voltage differencing current conveyor transconductance amplifier (CC-VDCCTA), is shown as an example of modular interconnection of the selected cells. This device was implemented in a newly synthesized topology of an electronically linearly tunable quadrature oscillator. Features of this active element were verified by simulations and experimental measurements.

Breslin, Catherine, and Adrian O'Lenskie. "Neuromorphic hardware databases for exploring structure–function relationships in the brain." Philosophical Transactions of the Royal Society of London. Series B: Biological Sciences 356, no. 1412 (August 29, 2001): 1249–58. http://dx.doi.org/10.1098/rstb.2001.0904.

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Neuromorphic hardware is the term used to describe full custom–designed integrated circuits, or silicon ‘chips’, that are the product of neuromorphic engineering—a methodology for the synthesis of biologically inspired elements and systems, such as individual neurons, retinae, cochleas, oculomotor systems and central pattern generators. We focus on the implementation of neurons and networks of neurons, designed to illuminate structure–function relationships. Neuromorphic hardware can be constructed with either digital or analogue circuitry or with mixed–signal circuitry—a hybrid of the two. Currently, most examples of this type of hardware are constructed using analogue circuits, in complementary metal–oxide–semiconductor technology. The correspondence between these circuits and neurons, or networks of neurons, can exist at a number of levels. At the lowest level, this correspondence is between membrane ion channels and field–effect transistors. At higher levels, the correspondence is between whole conductances and firing behaviour, and filters and amplifiers, devices found in conventional integrated circuit design. Similarly, neuromorphic engineers can choose to design Hodgkin–Huxley model neurons, or reduced models, such as integrate–and–fire neurons. In addition to the choice of level, there is also choice within the design technique itself; for example, resistive and capacitive properties of the neuronal membrane can be constructed with extrinsic devices, or using the intrinsic properties of the materials from which the transistors themselves are composed. So, silicon neurons can be built, with dendritic, somatic and axonal structures, and endowed with ionic, synaptic and morphological properties. Examples of the structure–function relationships already explored using neuromorphic hardware include correlation detection and direction selectivity. Establishing a database for this hardware is valuable for two reasons: first, independently of neuroscientific motivations, the field of neuromorphic engineering would benefit greatly from a resource in which circuit designs could be stored in a form appropriate for reuse and re–fabrication. Analogue designers would benefit particularly from such a database, as there are no equivalents to the algorithmic design methods available to designers of digital circuits. Second, and more importantly for the purpose of this theme issue, is the possibility of a database of silicon neuron designs replicating specific neuronal types and morphologies. In the future, it may be possible to use an automated process to translate morphometric data directly into circuit design compatible formats. The question that needs to be addressed is: what could a neuromorphic hardware database contribute to the wider neuroscientific community that a conventional database could not? One answer is that neuromorphic hardware is expected to provide analogue sensory–motor systems for interfacing the computational power of symbolic, digital systems with the external, analogue environment. It is also expected to contribute to ongoing work in neural–silicon interfaces and prosthetics. Finally, there is a possibility that the use of evolving circuits, using reconfigurable hardware and genetic algorithms, will create an explosion in the number of designs available to the neuroscience community. All this creates the need for a database to be established, and it would be advantageous to set about this while the field is relatively young. This paper outlines a framework for the construction of a neuromorphic hardware database, for use in the biological exploration of structure–function relationships.

Anusha, N., and T. Sasilatha. "Performance Analysis of Wide AND OR Structures Using Keeper Architectures in Various Complementary Metal Oxide Semiconductors Technologies." Journal of Computational and Theoretical Nanoscience 13, no. 10 (October 1, 2016): 6999–7008. http://dx.doi.org/10.1166/jctn.2016.5660.

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Power dissipation and area are the important constraints in VLSI design. Various techniques are employed in reducing the power dissipation of the logic circuits. Dynamic CMOS circuits are one of the techniques in VLSI to lower the power dissipation. All gates can be designed using dynamic CMOS to lower the power dissipation. In this paper wide AND OR gates are implemented using Dynamic circuits, where keeper architecture is employed in order to prevent leakage current and to ensure that correct output is obtained. The performance analysis of Wide AND OR structures implemented in dynamic CMOS with mandatory keeper architectures in ultra submicron range are analyzed. A comparative analysis of Power dissipation and area of the keeper architectures employed in dynamic CMOS in different lower nanometer such as 120 nm, 90 nm, 70 nm and 50 nm is analyzed.

Rajendran, Selvakumar, Arvind Chakrapani, Srihari Kannan, and Abdul Quaiyum Ansari. "A Research Perspective on CMOS Current Mirror Circuits: Configurations and Techniques." Recent Advances in Electrical & Electronic Engineering (Formerly Recent Patents on Electrical & Electronic Engineering) 14, no. 4 (June 17, 2021): 377–97. http://dx.doi.org/10.2174/2352096514666210127140831.

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Background: Immense growth in the field of VLSI technology is fuelled by its feasibility to realize analog circuits in μm and nm technology. The current mirror (CM) is a basic building block used to enhance performance characteristics by constructing complex analog/mixed-signal circuits like amplifier, data converters and voltage level converters. In addition, the current mirror finds diverse applications from biasing to current-mode signal processing. Methods: In this paper, the Complementary Metal Oxide Semiconductor (CMOS) technologybased current mirror (CM) circuits are discussed with their advantages and disadvantages accompanied by the performance analysis of different parameters. It also briefs various techniques which are employed for improvising the current mirror performance like gain boosting and bandwidth extension. Besides, this paper lists the CMs that use different types of MOS devices like Floating Gate MOS, Bulk-driven MOS, and Quasi-Floating Gate MOS. As a result, the paper performs a detailed review of CMOS Current mirrors and their techniques. Results: Basic CM circuits that can act as building blocks in the VLSI circuits are simulated using 0.25 μm, BSIM and Level 1 technology. In addition, various devices based CMs are investigated and compared. Conclusion: The comprehensive discussion shows that the current mirror plays a significant role in analog/mixed-signal circuits design to realize complex systems for low-power biomedical and wireless applications.

Kalagadda, B., N. Muthyala, and K. K. Korlapati. "Performance Comparison of Digital Circuits Using Subthreshold Leakage Power Reduction Techniques." Journal of Engineering Research [TJER] 14, no. 1 (March 1, 2017): 74. http://dx.doi.org/10.24200/tjer.vol14iss1pp74-84.

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Complementary metal-oxide semiconductors (CMOS), stack, sleep and sleepy keeper techniques are used to control sub-threshold leakage. These effective low-power digital circuit design approaches reduce the overall power dissipation. In this paper, the characteristics of inverter, twoinput negative-AND (NAND) gate, and half adder digital circuits were analyzed and compared in 45nm, 120nm, 180nm technology nodes by applying several leakage power reduction methodologies to conventional CMOS designs. The sleepy keeper technique when compared to other techniques dissipates less static power. The advantage of the sleepy keeper technique is mainly its ability to preserve the logic state of a digital circuit while reducing subthreshold leakage power dissipation.

Wang, Xiaochun, Meicheng Fu, Heng Yang, Jiali Liao, and Xiujian Li. "Temperature and Pulse-Energy Range Suitable for Femtosecond Pulse Transmission in Si Nanowire Waveguide." Applied Sciences 10, no. 23 (November 26, 2020): 8429. http://dx.doi.org/10.3390/app10238429.

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We experimentally measured the femtosecond pulse transmission through a silicon-on-insulator (SOI) nanowire waveguide under different temperatures and input pulse energy with a cross-correlation frequency-resolved optical gating (XFROG) measurement setup. The experimental results demonstrated that the temperature and pulse energy dependence of the Si photonic nanowire waveguide (SPNW) is interesting rather than just monotonous or linear, and that the suitable temperature and pulse-energy range is as suggested in this experiment, which will be valuable for analyzing the practical design of the operating regimes and the fine dispersion engineering of various ultrafast photonic applications based on the SPNWs. The research results will contribute to developing the SPNWs with photonic elements and networks compatible with mature complementary metal–oxide–semiconductors (CMOS).

Mizuno, Tomohisa, Naoki Mizoguchi, Kotaro Tanimoto, Tomoaki Yamauchi, Mitsuo Hasegawa, Toshiyuki Sameshima, and Tsutomu Tezuka. "New Source Heterojunction Structures with Relaxed/Strained Semiconductors for Quasi-Ballistic Complementary Metal–Oxide–Semiconductor Transistors: Relaxation Technique of Strained Substrates and Design of Sub-10 nm Devices." Japanese Journal of Applied Physics 49, no. 4 (April 20, 2010): 04DC13. http://dx.doi.org/10.1143/jjap.49.04dc13.

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Chang, Wen-Teng, Hsu-Jung Hsu, and Po-Heng Pao. "Vertical Field Emission Air-Channel Diodes and Transistors." Micromachines 10, no. 12 (December 6, 2019): 858. http://dx.doi.org/10.3390/mi10120858.

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Vacuum channel transistors are potential candidates for low-loss and high-speed electronic devices beyond complementary metal-oxide-semiconductors (CMOS). When the nanoscale transport distance is smaller than the mean free path (MFP) in atmospheric pressure, a transistor can work in air owing to the immunity of carrier collision. The nature of a vacuum channel allows devices to function in a high-temperature radiation environment. This research intended to investigate gate location in a vertical vacuum channel transistor. The influence of scattering under different ambient pressure levels was evaluated using a transport distance of about 60 nm, around the range of MFP in air. The finite element model suggests that gate electrodes should be near emitters in vertical vacuum channel transistors because the electrodes exhibit high-drive currents and low-subthreshold swings. The particle trajectory model indicates that collected electron flow (electric current) performs like a typical metal oxide semiconductor field effect-transistor (MOSFET), and that gate voltage plays a role in enhancing emission electrons. The results of the measurement on vertical diodes show that current and voltage under reduced pressure and filled with CO2 are different from those under atmospheric pressure. This result implies that this design can be used for gas and pressure sensing.

Heyns, M., and W. Tsai. "Ultimate Scaling of CMOS Logic Devices with Ge and III–V Materials." MRS Bulletin 34, no. 7 (July 2009): 485–92. http://dx.doi.org/10.1557/mrs2009.136.

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AbstractOver the years, many new materials have been introduced in advanced complementary metal oxide semiconductor (CMOS) processes in order to continue the trend of reducing the gate length and increasing the performance of CMOS devices. This is clearly evidenced in the International Technology Roadmap for Semiconductors (ITRS), which indicates the requirements and technological challenges in the microelectronics industry in various technology nodes. Every new technology node, characterized by the minimal device dimensions that are used, has required innovations in new materials and transistor design. The introduction of deposited high-κ gate dielectrics and metal gates as replacements for the thermally grown SiO2 and poly-Si electrode was a major challenge that has been met in the transition toward the 32 nm technology node since it replaced the heart of the metal oxide semiconductor structure. For the next generation of technology nodes, even bigger hurdles will need to be overcome, since new device structures and high-mobility channel materials such as Ge and III–V compounds might be needed, according to the ITRS roadmap, to meet the power and performance specifications of the 16 nm CMOS node and beyond. The basic properties of these high-mobility channel materials and their impact on the device performance have to be fully understood to allow process integration and full-scale manufacturing. In addition to thermal stability, compatibility with other materials, electronic transport properties, and especially the passivation of electronically active defects at the interface with a high-κ dielectric, are enormous challenges. Many encouraging results have been obtained, but the stringent demands in terms of electrical performance and oxide thickness scaling needed for highly scaled CMOS devices are not yet fully met. Other areas where breakthroughs will be needed are the formation of low-resistivity contacts, especially on III–V materials, and III–V materials suited for pMOS channels. An overview of the major successes and remaining critical issues in the materials research on high-mobility channel materials for advanced CMOS devices is given in this issue of MRS Bulletin.

Banerjee, Writam. "Challenges and Applications of Emerging Nonvolatile Memory Devices." Electronics 9, no. 6 (June 22, 2020): 1029. http://dx.doi.org/10.3390/electronics9061029.

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Emerging nonvolatile memory (eNVM) devices are pushing the limits of emerging applications beyond the scope of silicon-based complementary metal oxide semiconductors (CMOS). Among several alternatives, phase change memory, spin-transfer torque random access memory, and resistive random-access memory (RRAM) are major emerging technologies. This review explains all varieties of prototype and eNVM devices, their challenges, and their applications. A performance comparison shows that it is difficult to achieve a “universal memory” which can fulfill all requirements. Compared to other emerging alternative devices, RRAM technology is showing promise with its highly scalable, cost-effective, simple two-terminal structure, low-voltage and ultra-low-power operation capabilities, high-speed switching with high-endurance, long retention, and the possibility of three-dimensional integration for high-density applications. More precisely, this review explains the journey and device engineering of RRAM with various architectures. The challenges in different prototype and eNVM devices is disused with the conventional and novel application areas. Compare to other technologies, RRAM is the most promising approach which can be applicable as high-density memory, storage class memory, neuromorphic computing, and also in hardware security. In the post-CMOS era, a more efficient, intelligent, and secure computing system is possible to design with the help of eNVM devices.

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Дисертації з теми "Metal oxide semiconductors, Complementary Design and construction":

Bond, Steven Winfred. "Through-silicon circuit optical communications links." Diss., Georgia Institute of Technology, 2001. http://hdl.handle.net/1853/15390.

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Tang, Wei 1976. "High-speed parallel optical receivers." Thesis, McGill University, 2007. http://digitool.Library.McGill.CA:80/R/?func=dbin-jump-full&object_id=103298.

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Parallel optical interconnects (POI) have attracted a great deal of attention in the past two decades as the system bandwidth continues to increase. Optical interconnects are known to have more advantages than their electrical counterparts in many aspects such as crosstalk, bandwidth distance product, power consumption, and RC time delay. The parallelization of several optical links is also an effective method to increase the aggregate data rate while keeping the component count manageable and to reduce the unit cost of optics, electronics, and packaging at lower line rate.
Parallel optical transceiver modules running at several gigabits per second are commercially available nowadays. Parallel optical receivers are one of the key components of parallel interconnected systems. In this work, we describe how a low-power parallel CMOS preamplifier IC and a deskew IC have been designed and fabricated through the IBM 0.13mum CMOS technology. The performances of three different transimpedance amplifier (TIA) topologies are compared experimentally. The best of the three TIAs shows a differential gain of 56.2dBO, 2.6GHz bandwidth, and less than -16dBm sensitivity with a bit-error-rate (BER) less than 10-12. The TIA consumes 2.5mW of power from a 1.2V supply while the channel power is 22mW with a 400mV pp differential output swing.
A novel method of accurately measuring the crosstalk power penalty with an on-chip PRBS generator is proposed and its implementation is described. The use of an on-chip PRBS generator to drive the dummy channels eliminates the data pattern dependence between the aggressors and the victim. The inevitable channel skew associated with parallel channels can be removed by a phase-locked loop (PLL) based deskew method. We investigated the skew compensation range of this method theoretically and our experimental results confirm our conclusion.
Various practical design and test techniques such as photodiode modeling, AC coupling, low-pass filtering and continuous skew generation, and their implementations, are discussed and implemented in this thesis.

Deshpande, Sandeep. "A cost quality model for CMOS IC design." Thesis, This resource online, 1994. http://scholar.lib.vt.edu/theses/available/etd-12042009-020251/.

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Xiao, Haiqiao. "Design of Radio-Frequency Filters and Oscillators in Deep-Submicron CMOS Technology." PDXScholar, 2008. https://pdxscholar.library.pdx.edu/open_access_etds/5233.

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Radio-frequency filters and oscillators are widely used in wireless communication and high-speed digital systems, and they are mostly built on passive integrated inductors, which occupy a relative large silicon area. This research attempted to implement filters and oscillators operating at 1-5 GHz using transistors only, to reduce the circuits’ area. The filters and oscillators are designed using active inductors, based on the gyrator principle; they are fabricated in standard digital CMOS technology to be compatible with logic circuits and further lower the cost. To obtain the highest operating frequency, only parasitic capacitors were used. Two new active-inductor circuits are derived from this research, labeled allNMOS and all-NMOS-II. The all-NMOS active inductor was used to design high-Q bandpass filters and oscillators, which were fabricated in TSMC’s 0.18-µm digital CMOS process. The highest center frequency measured was 5.7 GHz at 0.20-µm gate length and the maximum repeatably measured Q was 665. 2.4-GHz circuits were also designed and fabricated in 0.40-µm gate length. The all-NMOS-II circuit has superior linearity and signal fidelity, which are robust against process and temperature variations, due to its novel structure. It was used in signal drivers and will be fabricated in commercial products. Small-signal analysis was conducted for each of the active-inductor, filter and oscillator circuits, and the calculated performance matches those from simulations. The noise performance of the active inductor, active-inductor filter and oscillator was also analyzed and the calculated results agree with simulations. The difference between simulation and measured results is about 10% due to modeling and parasitic extraction error. The all-NMOS active-inductor circuit was granted a US patent. The US patent for all-NMOS-II circuit is pending. This research generated three conference papers and two journal papers.

Ng, Chik-wai, and 吳植偉. "Design techniques of advanced CMOS building blocks for high-performance power management integrated circuits." Thesis, The University of Hong Kong (Pokfulam, Hong Kong), 2011. http://hub.hku.hk/bib/B45896926.

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Mule, Anthony Victor. "Volume grating coupler-based optical interconnect technologies for polylithic gigascale integrat." Diss., Georgia Institute of Technology, 2004. http://hdl.handle.net/1853/9447.

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Blalock, Benjamin Joseph. "A 1-volt CMOS wide dynamic Range operational amplifier." Diss., Georgia Institute of Technology, 1996. http://hdl.handle.net/1853/15441.

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Bhavnagarwala, Azeez Jenúddin. "Voltage scaling constraints for static CMOS logic and memory cirucits." Diss., Georgia Institute of Technology, 2001. http://hdl.handle.net/1853/15401.

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Dong, Zhiwei. "Low-power, low-distortion constant transconductance Gm-C filters." Diss., Georgia Institute of Technology, 2002. http://hdl.handle.net/1853/25400.

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Mony, Madeleine. "Reprogrammable optical phase array." Thesis, McGill University, 2007. http://digitool.Library.McGill.CA:80/R/?func=dbin-jump-full&object_id=103276.

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The evolving needs of network carriers are changing the design of optical networks. In order to reduce cost, latency, and power consumption, electrical switches are being replaced with optical switching fabrics at the core of the networks. An example of such a network is an Agile All-Photonic Network (AAPN).
This thesis presents a novel device that was designed to operate as an optical switch within the context of an AAPN network. The device is a Reprogrammable Optical Phase Array (ROPA), and the design consists of applying multiple electric fields of different magnitudes across an electro-optic material in order to create a diffractive optical element. The configuration of the electric fields can change to modify the properties of the diffractive device.
Such a device has a wide range of potential applications, and two different ROPA designs are presented. Both designs are optimized to function as 1xN optical switches. The switches are wavelength tunable and have switching times on the order of microseconds. The ROPA devices consist of two parts: a bulk electro-optic crystal, and a high-voltage CMOS chip for the electrical control of the device. The design, simulation, fabrication and testing of both the electrical and optical components of the devices are presented.

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Книги з теми "Metal oxide semiconductors, Complementary Design and construction":

Peluso, Vincenzo. Design of low-voltage low-power CMOS Delta-Sigma A/D converters. Boston: Kluwer Academic Publishers, 1999.

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Hogervorst, Ron. Design of low-voltage, low-power operational amplifier cells. Boston: Kluwer Academic Publishers, 1996.

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Craninckx, J. Wireless CMOS frequency synthesizer design. Boston: Kluwer Academic Publishers, 1998.

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Ndjountche, Tertulien. CMOS analog integrated circuits: High speed and power efficient design. Boca Raton: Taylor & Francis, 2011.

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Widmann, D. Technologie hochintegrierter Schaltungen. 2nd ed. Berlin: Springer, 1996.

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Baker, R. Jacob. CMOS circuit design, layout, and simulation. 2nd ed. New York: IEEE Press, 2005.

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Baker, R. Jacob. CMOS circuit design, layout, and simulation. New York: IEEE Press, 1997.

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Baker, R. Jacob. CMOS circuit design, layout, and simulation. New York: IEEE Press, 1998.

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Baker, R. Jacob. CMOS circuit design, layout, and simulation. 2nd ed. Piscataway, NJ: IEEE Press, 2008.

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Josʹe M. de la Rosa. Systematic design of CMOS switched-current bandpass sigma-delta modulators for digital communication chips. Boston: Kluwer Academic, 2002.

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Тези доповідей конференцій з теми "Metal oxide semiconductors, Complementary Design and construction":

Gillet, Jean-Numa, Yann Chalopin, and Sebastian Volz. "Atomic-Scale Three-Dimensional Phononic Crystals With a Lower Thermal Conductivity Than the Einstein Limit of Bulk Silicon." In ASME 2008 Heat Transfer Summer Conference collocated with the Fluids Engineering, Energy Sustainability, and 3rd Energy Nanotechnology Conferences. ASMEDC, 2008. http://dx.doi.org/10.1115/ht2008-56403.

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Extensive research about superlattices with a very low thermal conductivity was performed to design thermoelectric materials. Indeed, the thermoelectric figure of merit ZT varies with the inverse of the thermal conductivity but is directly proportional to the power factor. Unfortunately, as nanowires, superlattices reduce heat transfer in only one main direction. Moreover, they often show dislocations owing to lattice mismatches. Therefore, fabrication of nanomaterials with a ZT larger than the alloy limit usually fails with the superlattices. Self-assembly is a major epitaxial technology to fabricate ultradense arrays of germaniums quantum dots (QD) in a silicon matrix for many promising electronic and photonic applications as quantum computing. We theoretically demonstrate that high-density three-dimensional (3-D) periodic arrays of small self-assembled Ge nanoparticles (i.e. the QDs), with a size of some nanometers, in Si can show a very low thermal conductivity in the three spatial directions. This property can be considered to design thermoelectric devices, which are compatible with the complementary metal-oxide-semiconductor (CMOS) technologies. To obtain a computationally manageable model of these nanomaterials, we simulate their thermal behavior with atomic-scale 3-D phononic crystals. A phononic-crystal period (supercell) consists of diamond-like Si cells. At each supercell center, we substitute Si atoms by Ge atoms in a given number of cells to form a box-like Ge nanoparticle. The phononic-crystal dispersion curves, which are computed by classical lattice dynamics, are flat compared to those of bulk Si. In an example phononic crystal, the thermal conductivity can be reduced below the value of only 0.95 W/mK or by a factor of at least 165 compared to bulk silicon at 300 K. Close to the melting point of silicon, we obtain a larger decrease of the thermal conductivity below the value of 0.5 W/mK, which is twice smaller than the classical Einstein Limit of single crystalline Si. In this paper, we use an incoherent-scattering approach for the nanoparticles. Therefore, we expect an even larger decrease of the phononic-crystal thermal conductivity when multiple-scattering effects, as multiple reflections and diffusions of the phonons between the Ge nanoparticles, will be considered in a more realistic model. As a consequence of our simulations, a large ZT could be achieved in 3-D ultradense self-assembled Ge nanoparticle arrays in Si. Indeed, these nanomaterials with a very small thermal conductivity are crystalline semiconductors with a power factor that can be optimized by doping using CMOS-compatible technologies, which is not possible with other recently-proposed nanomaterials.