Готові списки джерел за темами / Metal oxide semiconductors

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Добірка наукової літератури з теми "Metal oxide semiconductors"

Автор: Grafiati
Опубліковано: 4 червня 2021
Оновлено: 30 липня 2024

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Статті в журналах з теми "Metal oxide semiconductors"

1

Jeon, Yunchae, Donghyun Lee, and Hocheon Yoo. "Recent Advances in Metal-Oxide Thin-Film Transistors: Flexible/Stretchable Devices, Integrated Circuits, Biosensors, and Neuromorphic Applications." Coatings 12, no. 2 (February 4, 2022): 204. http://dx.doi.org/10.3390/coatings12020204.

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Анотація:
Thin-film transistors using metal oxides have been investigated extensively because of their high transparency, large area, and mass production of metal oxide semiconductors. Compatibility with conventional semiconductor processes, such as photolithography of the metal oxide offers the possibility to develop integrated circuits on a larger scale. In addition, combinations with other materials have enabled the development of sensor applications or neuromorphic devices in recent years. Here, this paper provides a timely overview of metal-oxide-based thin-film transistors focusing on emerging applications, including flexible/stretchable devices, integrated circuits, biosensors, and neuromorphic devices. This overview also revisits recent efforts on metal oxide-based thin-film transistors developed with high compatibility for integration to newly reported applications.
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2

Pandit, Bhishma, and Jaehee Cho. "AlGaN Ultraviolet Metal–Semiconductor–Metal Photodetectors with Reduced Graphene Oxide Contacts." Applied Sciences 8, no. 11 (November 1, 2018): 2098. http://dx.doi.org/10.3390/app8112098.

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AlGaN semiconductors are promising materials in the field of ultraviolet (UV) detection. We fabricated AlGaN/GaN UV metal–semiconductor–metal (MSM) photodiodes with two back-to-back interdigitated finger electrodes comprising reduced graphene oxide (rGO). The rGO showed high transparency below the wavelength of 380 nm, which is necessary for a visible-blind photodetector, and showed outstanding Schottky behavior on AlGaN. As the photocurrent, dark current, photoresponsivity, detectivity, and cut-off wavelength were investigated with the rGO/AlGaN MSM photodiodes with various Al mole fractions, systematic variations in the device characteristics with the Al mole fraction were confirmed, proving the potential utility of the device architecture combining two-dimensional materials, rGO, and nitride semiconductors.
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3

Díaz, Carlos, Marjorie Segovia, and Maria Luisa Valenzuela. "Solid State Nanostructured Metal Oxides as Photocatalysts and Their Application in Pollutant Degradation: A Review." Photochem 2, no. 3 (August 5, 2022): 609–27. http://dx.doi.org/10.3390/photochem2030041.

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Most dyes used in various industries are toxic and carcinogenic, thus posing a serious hazard to humans as well as to the marine ecosystem. Therefore, the impact of dyes released into the environment has been studied extensively in the last few years. Heterogeneous photocatalysis has proved to be an efficient tool for degrading both atmospheric and aquatic organic contaminants. It uses the sunlight in the presence of a semiconductor photocatalyst to accelerate the remediation of environmental contaminants and the destruction of highly toxic molecules. To date, photocatalysis has been considered one of the most appealing options for wastewater treatment due to its great potential and high efficiency by using sunlight to remove organic pollutants and harmful bacteria with the aid of a solid photocatalyst. Among the photocatalysts currently used, nanostructured metal oxide semiconductors have been among the most effective. This review paper presents an overview of the recent research improvements on the degradation of dyes by using nanostructured metal oxide semiconductors obtained by a solid-state method. Metal oxides obtained by this method exhibited better photocatalytic efficiency than nanostructured metal oxides obtained using other solution methods in several cases. The present review discusses examples of various nanostructured transition metal oxides—such as TiO2, Fe2O3, NiO, ReO3, IrO2, Rh2O3, Rh/RhO2, and the actinide ThO2—used as photocatalysts on methylene blue. It was found that photocatalytic efficiency depends not only on the bandgap of the metal oxide but also on its morphology. Porous nanostructured metal oxides tend to present higher photocatalytic efficiency than metal oxides with a similar band gap.
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4

Matsumoto, Y., H. Koinuma, T. Hasegawa, I. Takeuchi, F. Tsui, and Young K. Yoo. "Combinatorial Investigation of Spintronic Materials." MRS Bulletin 28, no. 10 (October 2003): 734–39. http://dx.doi.org/10.1557/mrs2003.215.

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AbstractHigh-throughput synthesis and characterization techniques have been effective in discovering new materials and performing rapid mapping of phase diagrams. The application of the combinatorial strategy to explore doped transition-metal oxides has led to the discovery of a transparent room-temperature ferromagnetic oxide in Co-doped anatase TiO2. The discovery has triggered a wave of studies into other metal oxide systems in pursuit of diluted magnetic semiconductors. In this article, we describe recent combinatorial studies of magnetic transition-metal oxides, germanium-based magnetic semiconductors, and Heusler alloys.
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5

Robertson, John, and Zhaofu Zhang. "Doping limits in p-type oxide semiconductors." MRS Bulletin 46, no. 11 (November 2021): 1037–43. http://dx.doi.org/10.1557/s43577-021-00211-3.

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AbstractThe ability to dope a semiconductor depends on whether the Fermi level can be moved into its valence or conduction bands, on an energy scale referred to the vacuum level. For oxides, there are various suitable n-type oxide semiconductors, but there is a marked absence of similarly suitable p-type oxides. This problem is of interest not only for thin-film transistors for displays, or solar cell electrodes, but also for back-end-of-line devices for the semiconductor industry. This has led to a wide-ranging search for p-type oxides using high-throughput calculations. We note that some proposed p-type metal oxides have cation s-like lone pair states. The defect energies of some of these oxides were calculated in detail. The example SnTa2O6 is of interest, but others have structures more closely based on perovskite structure and are found to have more n-type than p-type character. Graphic abstract
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6

Yoshitake, Michiko. "General Method for Predicting Interface Bonding at Various Oxide–Metal Interfaces." Surfaces 7, no. 2 (June 3, 2024): 414–27. http://dx.doi.org/10.3390/surfaces7020026.

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Interface termination bonding between metal oxide and metals is discussed from the viewpoint of thermodynamics. The method of interface termination prediction proposed by the authors for Al2O3–metal and ZnO–metal interfaces is extended to a general interface between metal-oxide and metals. The extension of the prediction method to the interface between metal oxides and elemental semiconductors is also discussed. Information on interface bonding was extracted by carefully examining the experimental results and first-principles calculations in the references. The extracted information on interface bonding from references is compared with the results obtained via the proposed prediction method. It is demonstrated that interface termination bonding can be predicted by extending the method to oxide–metal interfaces in general, when there is no interface reaction such as the reduction of oxide, oxidation of metal, or mixed oxide formation. The method uses only basic quantities of pure elements and the formation enthalpy of oxides. Therefore, it can be applied to most of the metals (including elemental semiconductors) in the periodic table and metal oxides with one stable valence. The method is implemented as a software, “InterChemBond”, and can be used free of charge.
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7

Kim, Jungho, and Jiwan Kim. "Synthesis of NiO for various optoelectronic applications." Ceramist 25, no. 3 (September 30, 2022): 320–31. http://dx.doi.org/10.31613/ceramist.2022.25.3.02.

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Анотація:
Oxide semiconductors have developed rapidly in a short period of time in various industrial fields due to their ability to be easily manufactured at low temperatures and recoverability of electrical properties. Among these oxide semiconductors, nickel oxide (NiO) is one of the most studied transition metal oxides. NiO is a p-type semiconductor with a wide band gap at room temperature, and has advantages of low toxicity, low cost, and excellent stability. Due to these advantages, NiO is widely used in various industrial fields such as gas sensors. In this paper, various synthesis methods of NiO will be briefly reviewed. Such synthesis methods include organic solvent methods, chemical vapor deposition methods, sol-gel methods, and chemical solution deposition methods. Materials required for each synthesis method, experimental methods, post-processing, and experimental results are briefly described.
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8

Wu, Jianhao. "Performance comparison and analysis of silicon-based and carbon-based integrated circuits under VLSI." Applied and Computational Engineering 39, no. 1 (February 21, 2024): 244–50. http://dx.doi.org/10.54254/2755-2721/39/20230605.

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Анотація:
Since 1960, the semiconductor industry has invented Metal Oxide Semiconductor Field Effect Transistor (MOSFET) and Complementary Metal Oxide Semiconductor (CMOS) technologies. Subsequently, the semiconductor-based integrated circuit industry has led a new generation of information revolution, driving the rapid development of various electronic circuit technologies worldwide. With the physical limitations of the silicon semiconductor process, Moores Law is also approaching its physical limit. In the search for new semiconductor materials, carbon nanotube semiconductors have become one of the candidate materials for new semiconductor materials due to their many advantages, and their many characteristic parameters are even better than those of silicon semiconductors of the same size. This article introduces the research status, performance characteristics, and comparison of silicon-based and carbon-based integrated circuits, as well as the current application scenarios of silicon-based and carbon-based integrated circuits in the industry, and the many problems encountered. Finally, this article analyses the future development direction of the integrated circuit industry and the possible challenges it may face.
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9

Li, Jiawei. "Recent Progress of β-Ga2O3 and Transition Metal doped β- Ga2O3 Structure and Properties". Highlights in Science, Engineering and Technology 99 (18 червня 2024): 247–52. http://dx.doi.org/10.54097/er1nze77.

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Анотація:
Oxide semiconductor material formed from oxygen and a metal is a compound semiconductor material. Important oxide semiconductor materials include Cu2O, ZnO, SnO2, Fe2O3, TiO2, ZrO2, CoO, WO3, Ga2O3 and others. Oxide semiconductors have been receiving strong attention and are widely used in different fields such as solar cells and photovoltaic technology. Due to the development of technology, the high-performance techniques demand more from the parts. Semiconductor is an intensively researched substance that can be used in a wide range of technologies. β-Ga2O3 is a metal oxide that has good properties which can fit in different applications. However, due to its wide band gap, it is essentially an insulator. In this case, researchers put a lot of effect into the doping of β- Ga2O3 to improve its electronic conductivity. This review summarized the structures and properties of β- Ga2O3 single crystal and the amelioration of the characteristics by transition metal (Mn, Zn, V, Fe, Nb, Ta and W) dopants.
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Adhikari, Sangeeta, and Debasish Sarkar. "Metal oxide semiconductors for dye degradation." Materials Research Bulletin 72 (December 2015): 220–28. http://dx.doi.org/10.1016/j.materresbull.2015.08.009.

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Дисертації з теми "Metal oxide semiconductors"

1

Peleckis, Germanas. "Studies on diluted oxide magnetic semiconductors for spin electronic applications." Access electronically, 2006. http://www.library.uow.edu.au/adt-NWU/public/adt-NWU20070821.145447/index.html.

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Wu, Kehuey. "Strain effects on the valence band of silicon piezoresistance in p-type silicon and mobility enhancement in strained silicon pMOSFET /." [Gainesville, Fla.] : University of Florida, 2005. http://purl.fcla.edu/fcla/etd/UFE0008390.

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Al-Ahmadi, Ahmad Aziz. "Complementary orthogonal stacked metal oxide semiconductor a novel nanoscale complementary metal oxide semiconductor architecture /." Ohio : Ohio University, 2006. http://www.ohiolink.edu/etd/view.cgi?ohiou1147134449.

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Liu, Kou-chen. "Si1-xGex/Si vertical MOSFETs and sidewall strained Si devices : design and fabrication /." Digital version accessible at:, 1999. http://wwwlib.umi.com/cr/utexas/main.

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Höhr, Timm. "Quantum-mechanical modeling of transport parameters for MOS devices /." Konstanz : Hartnung-Gorre, 2006. http://www.loc.gov/catdir/toc/fy0707/2007358987.html.

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Анотація:
Originally presented as the author's thesis (Swiss Federal Institute of Technology), Diss. ETH No. 16228.
Summary in German and English, text in English. Includes bibliographical references (p. 123-132).
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6

Gurcan, Zeki B. "0.18 [mu]m high performance CMOS process optimization for manufacturability /." Online version of thesis, 2005. http://hdl.handle.net/1850/5197.

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Wu, Ting. "Design of terabits/s CMOS crossbar switch chip /." View Abstract or Full-Text, 2003. http://library.ust.hk/cgi/db/thesis.pl?ELEC%202003%20WU.

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Анотація:
Thesis (M. Phil.)--Hong Kong University of Science and Technology, 2003.
Includes bibliographical references (leaves 100-105). Also available in electronic version. Access restricted to campus users.
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8

Wu, Xu Sheng. "Three dimensional multi-gates devices and circuits fabrication, characterization, and modeling /." View abstract or full-text, 2005. http://library.ust.hk/cgi/db/thesis.pl?ELEC%202005%20WUX.

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Modzelewski, Kenneth Paul. "DC parameter extraction technique for independent double gate MOSFETs a thesis presented to the faculty of the Graduate School, Tennessee Technological University /." Click to access online, 2009. http://proquest.umi.com/pqdweb?index=11&did=1759989211&SrchMode=1&sid=1&Fmt=6&VInst=PROD&VType=PQD&RQT=309&VName=PQD&TS=1250600320&clientId=28564.

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Trivedi, Vishal P. "Physics and design of nonclassical nanoscale CMOS devices with ultra-thin bodies." [Gainesville, Fla.] : University of Florida, 2005. http://purl.fcla.edu/fcla/etd/UFE0009860.

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Книги з теми "Metal oxide semiconductors"

1

Nicollian, E. H. MOS (metal oxide semiconductor) physics and technology. Hoboken, N.J: Wiley-Interscience, 2003.

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2

J, Dumin D., ed. Oxide reliability: A summary of silicon oxide wearout, breakdown, and reliability. [River Edge, NJ]: World Scientific, 2002.

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3

Sato, Norio. Electrochemistry at metal and semiconductor electrodes. Amsterdam: Elsevier, 1998.

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4

Zhao, Yi. Wafer level reliability of advanced CMOS devices and processes. New York: Nova Science Publishers, 2008.

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5

Lancaster, Don. CMOS cookbook. 2nd ed. Indianapolis, Ind: H.W. Sams, 1988.

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6

Pfaffli, Paul. Characterisation of degradation and failure phenomena in MOS devices. Konstanz [Germany]: Hartung-Gorre, 1999.

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7

T, Andre Noah, and Simon Lucas M, eds. MOSFETS: Properties, preparations to performance. New York: Nova Science Publishers, 2008.

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8

Korec, Jacek. Low voltage power MOSFETs: Design, performance and applications. New York: Springer, 2011.

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9

Paul, Reinhold. MOS-Feldeffekttransistoren. Berlin: Springer-Verlag, 1994.

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10

Shoji, Masakazu. CMOS digital circuit technology. Englewood Cliffs, N.J: Prentice Hall, 1988.

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Частини книг з теми "Metal oxide semiconductors"

1

Hussain, Aftab M. "Metal Oxide Semiconductors." In Introduction to Flexible Electronics, 81–94. Boca Raton: CRC Press, 2021. http://dx.doi.org/10.1201/9781003010715-8.

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Janotti, A., J. B. Varley, J. L. Lyons, and C. G. Van de Walle. "Controlling the Conductivity in Oxide Semiconductors." In Functional Metal Oxide Nanostructures, 23–35. New York, NY: Springer New York, 2011. http://dx.doi.org/10.1007/978-1-4419-9931-3_2.

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3

Baratto, Camilla, Elisabetta Comini, Guido Faglia, Matteo Ferroni, Andrea Ponzoni, Alberto Vomiero, and Giorgio Sberveglieri. "Transparent Metal Oxide Semiconductors as Gas Sensors." In Transparent Electronics, 417–42. Chichester, UK: John Wiley & Sons, Ltd, 2010. http://dx.doi.org/10.1002/9780470710609.ch17.

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4

Fukumura, Tomoteru, and Masashi Kawasaki. "Magnetic Oxide Semiconductors: On the High-Temperature Ferromagnetism in TiO2- and ZnO-Based Compounds." In Functional Metal Oxides, 89–131. Weinheim, Germany: Wiley-VCH Verlag GmbH & Co. KGaA, 2013. http://dx.doi.org/10.1002/9783527654864.ch3.

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Swapnalin, Jhilmil, Prasun Banerjee, Chetana Sabbanahalli, Dinesh Rangappa, Kiran Kumar Kondamareddy, and Dharmapura H. K. Murthy. "Computational Techniques on Optical Properties of Metal-Oxide Semiconductors." In Optical Properties and Applications of Semiconductors, 155–66. Boca Raton: CRC Press, 2022. http://dx.doi.org/10.1201/9781003188582-10.

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6

Jongh, L. J. "Superconductivity by Local Pairs (Bipolarons) in Doped Metal Oxide Semiconductors." In Mixed Valency Systems: Applications in Chemistry, Physics and Biology, 223–46. Dordrecht: Springer Netherlands, 1991. http://dx.doi.org/10.1007/978-94-011-3606-8_13.

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Ameen, Sadia, M. Shaheer Akhtar, Hyung-Kee Seo, and Hyung Shik Shin. "Metal Oxide Semiconductors and their Nanocomposites Application Towards Photovoltaic and Photocatalytic." In Advanced Energy Materials, 105–66. Hoboken, NJ, USA: John Wiley & Sons, Inc., 2014. http://dx.doi.org/10.1002/9781118904923.ch3.

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Hartnagel, H. L., and V. P. Sirkeli. "The Use of Metal Oxide Semiconductors for THz Spectroscopy of Biological Applications." In IFMBE Proceedings, 213–17. Cham: Springer International Publishing, 2019. http://dx.doi.org/10.1007/978-3-030-31866-6_43.

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Körösi, L., K. Mogyorósi, R. Kun, J. Németh, and I. Dékány. "Preparation and photooxidation properties of metal oxide semiconductors incorporated in layer silicates." In From Colloids to Nanotechnology, 27–33. Berlin, Heidelberg: Springer Berlin Heidelberg, 2004. http://dx.doi.org/10.1007/978-3-540-45119-8_5.

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Weik, Martin H. "metal-oxide semiconductor." In Computer Science and Communications Dictionary, 1009. Boston, MA: Springer US, 2000. http://dx.doi.org/10.1007/1-4020-0613-6_11446.

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Тези доповідей конференцій з теми "Metal oxide semiconductors"

1

Seo, Young-Ho, Seung-Woo Do, Yong-Hyun Lee, Jae-Sung Lee, Jisoon Ihm, and Hyeonsik Cheong. "Deuterium Process to Improve Gate Oxide Integrity in Metal-Oxide-Silicon (MOS) Structure." In PHYSICS OF SEMICONDUCTORS: 30th International Conference on the Physics of Semiconductors. AIP, 2011. http://dx.doi.org/10.1063/1.3666696.

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Satsangi, Vibha R. "Metal oxide semiconductors in PEC splitting of water." In Solar Energy + Applications, edited by Jinghua Guo. SPIE, 2007. http://dx.doi.org/10.1117/12.734795.

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Lee, Dong Uk, Seon Pil Kim, Hyo Jun Lee, Dong Seok Han, Eun Kyu Kim, Hee-Wook You, Won-Ju Cho, Young-Ho Kim, Jisoon Ihm, and Hyeonsik Cheong. "Study on transparent and flexible memory with metal-oxide nanocrystals." In PHYSICS OF SEMICONDUCTORS: 30th International Conference on the Physics of Semiconductors. AIP, 2011. http://dx.doi.org/10.1063/1.3666652.

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Tristiantoro, Roby, Andani Achmad, and Syafaruddin. "System of Breath Analyzer based on Metal-Oxide Semiconductors." In 2022 6th International Conference on Information Technology, Information Systems and Electrical Engineering (ICITISEE). IEEE, 2022. http://dx.doi.org/10.1109/icitisee57756.2022.10057693.

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Vecchi, P., A. Piccioni, I. Carrai, R. Mazzaro, F. Boscherini, P. Ceroni, S. Caramori, and L. Pasquini. "Nanostructured metal oxide semiconductors for photoelectrocatalytic conversion of solar energy." In 2023 IEEE Nanotechnology Materials and Devices Conference (NMDC). IEEE, 2023. http://dx.doi.org/10.1109/nmdc57951.2023.10344113.

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Balakumar, S., and R. Ajay Rakkesh. "Core/shell nano-structuring of metal oxide semiconductors and their photocatalytic studies." In SOLID STATE PHYSICS: PROCEEDINGS OF THE 57TH DAE SOLID STATE PHYSICS SYMPOSIUM 2012. AIP, 2013. http://dx.doi.org/10.1063/1.4790898.

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Ng, A., X. Liu, Y. C. Sun, A. B. Djurišić, A. M. C. Ng, and W. K. Chan. "Effect of electron collecting metal oxide layer in normal and inverted structure polymer solar cells." In THE PHYSICS OF SEMICONDUCTORS: Proceedings of the 31st International Conference on the Physics of Semiconductors (ICPS) 2012. AIP, 2013. http://dx.doi.org/10.1063/1.4848343.

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Osseily, Hassan Amine, and Ali Massoud Haidar. "Octal to binary conversion using multi-input floating gate complementary metal oxide semiconductors." In 2011 10th International Symposium on Signals, Circuits and Systems (ISSCS). IEEE, 2011. http://dx.doi.org/10.1109/isscs.2011.5978644.

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Zhang, Rui, Linsen Bie, Tze-Ching Fung, Eric Kai-Hsiang Yu, Chumin Zhao, and Jerzy Kanicki. "High performance amorphous metal-oxide semiconductors thin-film passive and active pixel sensors." In 2013 IEEE International Electron Devices Meeting (IEDM). IEEE, 2013. http://dx.doi.org/10.1109/iedm.2013.6724703.

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Osseily, Hassan Amine, and Ali Massoud Haidar. "Hexadecimal to binary conversion using multi-input floating gate complementary metal oxide semiconductors." In 2015 International Conference on Applied Research in Computer Science and Engineering (ICAR). IEEE, 2015. http://dx.doi.org/10.1109/arcse.2015.7338134.

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Звіти організацій з теми "Metal oxide semiconductors"

1

Bryant, R. E. Two Papers on a Symbolic Analyzer for MOS (Metal-Oxide Semiconductors) Circuits. Fort Belvoir, VA: Defense Technical Information Center, December 1987. http://dx.doi.org/10.21236/ada188617.

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2

Hane, G. J., M. Yorozu, T. Sogabe, and S. Suzuki. Long-term research in Japan: amorphous metals, metal oxide varistors, high-power semiconductors and superconducting generators. Office of Scientific and Technical Information (OSTI), April 1985. http://dx.doi.org/10.2172/5621417.

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3

Wang, Wei. Complimentary Metal Oxide Semiconductor (CMOS)-Memristor Hybrid Nanoelectronics. Fort Belvoir, VA: Defense Technical Information Center, June 2011. http://dx.doi.org/10.21236/ada544310.

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4

Ludeke, R. Spatially Resolved Transport Studies and Microscopy of Ultrathin Metal-Oxide-Semiconductor Structures. Fort Belvoir, VA: Defense Technical Information Center, August 1997. http://dx.doi.org/10.21236/ada329531.

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5

Griffin, Timothy E. Pulsed Capacitance Measurement of Silicon Carbide (SiC) Schottky Diode and SiC Metal Oxide Semiconductor. Fort Belvoir, VA: Defense Technical Information Center, November 2006. http://dx.doi.org/10.21236/ada458317.

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6

Lee, Timothy C., and Robert M. Proie. A Subthreshold Digital Library Using a Dynamic-Threshold Metal-Oxide Semiconductor (DTMOS) and Transmission Gate Logic. Fort Belvoir, VA: Defense Technical Information Center, September 2014. http://dx.doi.org/10.21236/ada608589.

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7

Xu, Yang. A 94GHz Temperature Compensated Low Noise Amplifier in 45nm Silicon-on-Insulator Complementary Metal-Oxide Semiconductor (SOI CMOS). Fort Belvoir, VA: Defense Technical Information Center, January 2014. http://dx.doi.org/10.21236/ada596171.

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