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Статті в журналах з теми "Magnesium oxide thin film"
Watazu, Akira, and Tsutomu Sonoda. "Mechanical Property of Magnesium Alloy Surface with Dense Oxide." Materials Science Forum 941 (December 2018): 1827–32. http://dx.doi.org/10.4028/www.scientific.net/msf.941.1827.
Повний текст джерелаChoi, Hyungsoo, and Soontaik Hwang. "Sol-gel-derived Magnesium Oxide Precursor for Thin-film Fabrication." Journal of Materials Research 15, no. 4 (April 2000): 842–45. http://dx.doi.org/10.1557/jmr.2000.0120.
Повний текст джерелаAnuradha, B., and C. Sanjeeviraja. "Review on Magnesium Indium Oxide Thin Films: Material Properties and Preparation Techniques." Materials Science Forum 699 (September 2011): 39–66. http://dx.doi.org/10.4028/www.scientific.net/msf.699.39.
Повний текст джерелаWatazu, Akira, and Tsutomu Sonoda. "Deformation Property of Dense Oxide Coated Magnesium Alloy Surface." Materials Science Forum 1016 (January 2021): 1591–96. http://dx.doi.org/10.4028/www.scientific.net/msf.1016.1591.
Повний текст джерелаAbdullah-Hamead, Alaa Aladdin. "Advanced Structured of MgO Thin Film for Bio Applications." Materials Science Forum 1002 (July 2020): 319–30. http://dx.doi.org/10.4028/www.scientific.net/msf.1002.319.
Повний текст джерелаAlaani, Mohammed A. Razooqi, Prakash Koirala, Adam B. Phillips, Geethika K. Liyanage, Rasha A. Awni, Dhurba R. Sapkota, Balaji Ramanujam, et al. "Optical Properties of Magnesium-Zinc Oxide for Thin Film Photovoltaics." Materials 14, no. 19 (September 28, 2021): 5649. http://dx.doi.org/10.3390/ma14195649.
Повний текст джерелаKim, Seong Jong, and Jeong Il Kim. "Effects of Current Density on the Formation of Anodic Oxide Films on AZ91." Materials Science Forum 510-511 (March 2006): 166–69. http://dx.doi.org/10.4028/www.scientific.net/msf.510-511.166.
Повний текст джерелаLee, Jung-Kun, Hyun-Suk Jung, Dong-Wan Kim, Chang-Hoon Kim, and Kug Sun Hong. "Influence of Substrates on the Crystal Structure of Pulsed Laser Deposited Pb(Mg1/3Nb2/3)O3–29% PbTiO3 Thin Films." Journal of Materials Research 17, no. 5 (May 2002): 1030–34. http://dx.doi.org/10.1557/jmr.2002.0152.
Повний текст джерелаda Silva Almeida, Darlene Souza, Ladario da Silva, Marcela Teixeira Dalboni Garcia, José Adilson de Castro, and Luciano Pessanha Moreira. "Ellipsometric Characterization of AZ31 Magnesium Alloy." Materials Science Forum 930 (September 2018): 478–83. http://dx.doi.org/10.4028/www.scientific.net/msf.930.478.
Повний текст джерелаMohd Wahid, Mohamad Hafiz, Rozana Mohd Dahan, Siti Zaleha Sa'ad, Adillah Nurashikin Arshad, Muhamad Naiman Sarip, Habibah Zulkefle, and Mohamad Rusop Mahmood. "Surface Morphologies of PVDF-TrFE/MgO Nanocomposite Thin Films and its Effect on the Ferroelectric Properties." Advanced Materials Research 1134 (December 2015): 6–11. http://dx.doi.org/10.4028/www.scientific.net/amr.1134.6.
Повний текст джерелаДисертації з теми "Magnesium oxide thin film"
Wang, Chao-Hsiung. "The growth of thin film epitaxial oxide-metal heterostructures." Thesis, University of Cambridge, 1998. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.368667.
Повний текст джерелаDyachenko, A. V. "Spray pyrolysis deposition of magnesium oxide thin films." Thesis, Сумський державний університет, 2014. http://essuir.sumdu.edu.ua/handle/123456789/34844.
Повний текст джерелаHlaing, Oo Win Maw. "Infrared spectroscopy of zinc oxide and magnesium nanostructures." Online access for everyone, 2007. http://www.dissertations.wsu.edu/Dissertations/Fall2007/w_hlaingoo_121107.pdf.
Повний текст джерелаBittau, Francesco. "Analysis and optimisation of window layers for thin film CDTE solar cells." Thesis, Loughborough University, 2017. https://dspace.lboro.ac.uk/2134/32642.
Повний текст джерелаJurgens-Kowal, Teresa Ann. "Preparation and characterization of synthetic mineral surfaces : adsorption and thermal decomposition of tetraethoxysilane on magnesium oxide, molybdenum, and titanium dioxide surfaces /." Thesis, Connect to this title online; UW restricted, 1996. http://hdl.handle.net/1773/9865.
Повний текст джерелаPousaneh, Elaheh, Tobias Rüffer, Khaybar Assim, Volodymyr Dzhagan, Julian Noll, Dietrich R. T. Zahn, Lutz Mertens, Michael Mehring, Stefan E. Schulz та Heinrich Lang. "Magnesium β-Ketoiminates as CVD Precursors for MgO Formation". Technische Universität Chemnitz, 2018. https://monarch.qucosa.de/id/qucosa%3A21427.
Повний текст джерелаSarpi, Brice. "Etude in-situ de la formation d'oxyde ultra-mince de magnésium sur substrats métalliques et semi-conducteurs." Thesis, Aix-Marseille, 2016. http://www.theses.fr/2016AIXM4329/document.
Повний текст джерелаThis PhD work was dedicated to studying the fundamental mechanisms driving the controlled growth of ultra-thin oxide films. An experimental set-up was designed to finely control the growth parameters under UHV conditions while allowing the study of such oxide layers in situ with STM-STS, AES and LEED. Using an original method based on alternate cycles of Mg monolayer adsorption and RT oxidation, we focused on the formation of systems exhibiting a wide range of potential applications: MgO/Si(100) and MgO/Ag(111). The MgO/Si(100) system revealed the growth of an ultra-thin Mg2Si layer at the interface between the MgO and the silicon. In agreement with thermodynamic calculations, a crystallization of this interlayer driven by a partial decomposition of the Mg2Si to a MgO oxide was shown to occur at RT. From ex situ TEM experiments, the involved epitaxial relationship highlighted the formation of an MgO / Mg2Si (11-1) / Si(001) heterostructure. A sharp interface with the silicon was formed, as much as an ultra-thin and amorphous MgO layer exhibiting both a good homogeneity and a high insulating character (bandgap of 6 eV).In the MgO/Ag(111) system, no interfacial alloy formation and a « liquid-like » growth for the Mg were evidenced at RT, using our experimental results coupled with the ab initio calculations performed by our co-workers at LAAS laboratory. Later, a double-layering O/Mg/O/Mg/Ag(111) grown at RT followed by UHV annealing at 430°C resulted in the stabilization of a polar MgO(111) ultra-thin film, which was characterized using LEED and STM-STS. The physicochemical properties of this polar oxide and the potential origin of its stability were discussed
Bitencourt, José Francisco Sousa. "Produção e caracterização de óxido de alumínio, aluminato de magnésio e filmes finos de óxido de alumínio para aplicações em radioterapia e dosimetria ambiental." Universidade de São Paulo, 2013. http://www.teses.usp.br/teses/disponiveis/3/3140/tde-11072014-014000/.
Повний текст джерелаThermoluminecent (TL), Optically Stimulated Luminescence (OSL), EPR (Electron spin Resonance) and Radioluminescence (RL) measurements were obtained from aluminum oxide and magnesium doped aluminum oxide samples. The samples were calcinated at three different temperatures (1100, 1350 and 1600°C) in order to observe variation of luminescent properties. As results, it was found that the calcination temperature is of great importance in the production of dosimetric materials, since the undoped sample calcinated at 1600°C showed the highest sensibility. In early works, magnesium doped aluminum oxide samples exhibited the formation of nanostructured layer composed by magnesium aluminate, observed using Transmission Electron Microscopy (TEM), which induced an increase of the luminescent properties. Samples of undoped and rare-earths doped magnesium aluminate, calcinated at 1100, 1350 and 1600°C, were produced. TL and OSL measurements were obtained from irradiated aliquots, analyzed and compared to EPR and XRD results. Results showed that, under the parameters used in this work, only gadolinium doped samples exhibited increase in TL and OSL emissions. XRD indicated the formation of Al5Er3O12 and Al5Yb3O12 structures in doped samples; gadolinium and europium doped samples also showed new structures, which couldnt be identified. Powder aluminum oxide was used to produce deposition targets, which were employed in the deposition of thin films over P type monocrystalline silicon (100) wafers. Variations of deposition parameters and heat treatment induced the formation of thin films with different characteristics, observed by XRD and luminescent analysis (TL). XRD results indicated the occurrence of alpha-Al2O3 in some of the thick films. Samples exposed to natural radiation produced TL emission in the visible spectrum.
Akyildiz, Hasan. "Hydrogen Storage In Magnesium Based Thin Film." Phd thesis, METU, 2010. http://etd.lib.metu.edu.tr/upload/12612652/index.pdf.
Повний текст джерелаztü
rk Co-Supervisor : Prof. Dr. Macit Ö
zenbas October 2010, 146 pages A study was carried out for the production of Mg-based thin films which can absorb and desorb hydrogen near ambient conditions, with fast kinetics. For this purpose, two deposition units were constructed
one high vacuum (HV) and the other ultra high vacuum (UHV) deposition system. The HV system was based on a pyrex bell jar and had two independent evaporation sources. The unit was used to deposit films of Mg, Mg capped with Pd and Au-Pd as well as Mg-Cu both in co-deposited and multilayered form within a thickness range of 0.4 to 1.5 &mu
m. The films were crystalline with columnar grains having some degree of preferred orientation. In terms of hydrogen storage properties, Mg/Pd system yielded the most favorable results. These films could desorb hydrogen at temperatures not greater than 473 K. The study on crystalline thin films has further shown that there is a narrow temperature window for useful hydrogenation of thin films, the upper limit of which is determined by the intermetallic formation. The UHV deposition system had four independent evaporation sources and incorporated substrate cooling by circulating cooled nitrogen gas through the substrate holder. Thin films of Mg-Cu were produced in this unit via co-evaporation technique to provide concentrations of 5, 10 and 15 at. % Cu. The films were 250-300 nm thick, capped with a thin layer of Pd, i.e. 5-25 nm. The deposition was yielded nanocrystalline or amorphous Mg-Cu thin films depending on the substrate temperature. At 298 K, the films were crystalline, the structure being refined with the increase in Cu content. At 223 K, the films were amorphous, except for Mg:Cu=95:5. The hydrogen sorption of the films was followed by resistance measurements, with the samples heated isochronally, initially under hydrogen and then under vacuum. The resistance data have shown that hydrogen sorption behaviour of thin films was improved by size refinement, and further by amorphization. Among the films deposited, amorphous Mg:Cu=85:15 alloy could absorb hydrogen at room temperature and could desorb it at 223 K (50 º
C), with fast kinetics.
Guan, Jingcheng. "Modelling zinc oxide thin-film growth." Thesis, Loughborough University, 2018. https://dspace.lboro.ac.uk/2134/36311.
Повний текст джерелаКниги з теми "Magnesium oxide thin film"
Vladimir, Matias, and Materials Research Society Meeting, eds. Artificially induced grain alignment in thin films: Symposium held December 2-3, 2008, Boston, Massachusetts, U.S.A. Warrendale, Pa: Materials Research Society, 2009.
Знайти повний текст джерелаP, Shapiro A., and United States. National Aeronautics and Space Administration., eds. Magnesium-aluminum-zirconium oxide amorphous ternary composite: A dense and stable optical coating. [Washington, D.C: National Aeronautics and Space Administration, 1998.
Знайти повний текст джерелаP, Shapiro A., and United States. National Aeronautics and Space Administration., eds. Magnesium-aluminum-zirconium oxide amorphous ternary composite: A dense and stable optical coating. [Washington, D.C: National Aeronautics and Space Administration, 1998.
Знайти повний текст джерелаP, Shapiro A., and United States. National Aeronautics and Space Administration., eds. Magnesium-aluminum-zirconium oxide amorphous ternary composite: A dense and stable optical coating. [Washington, D.C: National Aeronautics and Space Administration, 1998.
Знайти повний текст джерелаP, Shapiro A., and United States. National Aeronautics and Space Administration., eds. Magnesium-aluminum-zirconium oxide amorphous ternary composite: A dense and stable optical coating. [Washington, D.C: National Aeronautics and Space Administration, 1998.
Знайти повний текст джерелаNational Renewable Energy Laboratory (U.S.), ed. Amorphous indium-zinc-oxide transparent conductors for thin film PV: Preprint. Golden, CO: National Renewable Energy Laboratory, 2011.
Знайти повний текст джерелаLaconte, J. Micromachined thin-film sensors for SOI-CMOS co-integration. New York: Springer, 2011.
Знайти повний текст джерелаBarquinha, Pedro. Transparent oxide electronics: From materials to devices. Hoboken, N.J: Wiley, 2012.
Знайти повний текст джерелаKlaus, Ellmer, Klein Andreas Dr, and Rech Bernd, eds. Transparent conductive zinc oxide: Basics and applications in thin film solar cells. Berlin: Springer, 2008.
Знайти повний текст джерелаChubb, Donald L. Emittance theory for thin film selective emitter. [Washington, DC]: National Aeronautics and Space Administration, 1994.
Знайти повний текст джерелаЧастини книг з теми "Magnesium oxide thin film"
Hikita, Yasuyuki, and Harold Y. Hwang. "Complex Oxide Schottky Junctions." In Thin Film Metal-Oxides, 169–204. Boston, MA: Springer US, 2009. http://dx.doi.org/10.1007/978-1-4419-0664-9_5.
Повний текст джерелаLu, Jiwei, Kevin G. West, and Stuart A. Wolf. "Novel Magnetic Oxide Thin Films." In Thin Film Metal-Oxides, 95–129. Boston, MA: Springer US, 2009. http://dx.doi.org/10.1007/978-1-4419-0664-9_3.
Повний текст джерелаDemkov, Alexander A., and Agham B. Posadas. "Thin Oxide Film Characterization Methods." In Integration of Functional Oxides with Semiconductors, 89–114. New York, NY: Springer New York, 2014. http://dx.doi.org/10.1007/978-1-4614-9320-4_5.
Повний текст джерелаKambara, Hiroyuki, Theodor Schneller, and Rainer Waser. "Thin Film Multilayer Capacitors." In Chemical Solution Deposition of Functional Oxide Thin Films, 547–70. Vienna: Springer Vienna, 2013. http://dx.doi.org/10.1007/978-3-211-99311-8_22.
Повний текст джерелаBrotherton, S. D. "Transparent Amorphous Oxide Semiconductor TFTs." In Introduction to Thin Film Transistors, 301–38. Heidelberg: Springer International Publishing, 2013. http://dx.doi.org/10.1007/978-3-319-00002-2_9.
Повний текст джерелаFister, Tim T., and Dillon D. Fong. "In Situ Synchrotron Characterization of Complex Oxide Heterostructures." In Thin Film Metal-Oxides, 1–49. Boston, MA: Springer US, 2009. http://dx.doi.org/10.1007/978-1-4419-0664-9_1.
Повний текст джерелаKamiya, Toshio, Kenji Nomura, Keisuke Ide, Jungwhan Kim, Hidenori Hiramatsu, Hideya Kumomi, and Hideo Hosono. "Amorphous Oxide Semiconductor Thin-Film Transistors." In Novel Structured Metallic and Inorganic Materials, 573–87. Singapore: Springer Singapore, 2019. http://dx.doi.org/10.1007/978-981-13-7611-5_38.
Повний текст джерелаDorey, Robert, Subhasis Roy, A. Sharma, Chandan Ghanty, and Subhasish B. Majumder. "Composite Film Processing." In Chemical Solution Deposition of Functional Oxide Thin Films, 445–82. Vienna: Springer Vienna, 2013. http://dx.doi.org/10.1007/978-3-211-99311-8_19.
Повний текст джерелаBarquinha, Pedro, Rodrigo Martins, and Elvira Fortunato. "N-Type Oxide Semiconductor Thin-Film Transistors." In Springer Series in Materials Science, 435–76. Berlin, Heidelberg: Springer Berlin Heidelberg, 2011. http://dx.doi.org/10.1007/978-3-642-23521-4_15.
Повний текст джерелаIgnatiev, Alex, Rabi Ebrahim, Mukhtar Yeleuov, Daniel Fisher, Xin Chen, Naijuan Wu, and Serekbol Tokmoldin. "Nanostructured Thin Film Solid Oxide Fuel Cells." In Advanced Nano Deposition Methods, 223–38. Weinheim, Germany: Wiley-VCH Verlag GmbH & Co. KGaA, 2016. http://dx.doi.org/10.1002/9783527696406.ch12.
Повний текст джерелаТези доповідей конференцій з теми "Magnesium oxide thin film"
Xiaobin Bi, Jianke Yao, and Shengdong Zhang. "Magnesium-doped Indium Oxide thin film transistors for ultraviolet detection." In 2014 IEEE International Conference on Electron Devices and Solid-State Circuits (EDSSC). IEEE, 2014. http://dx.doi.org/10.1109/edssc.2014.7061093.
Повний текст джерелаLiu, Ming-Chung, Shih-Chin Yang, Cheng-Chung Lee, Shih-Pu Chen, Jung-Yu Li, and Yi-Ping Lin. "Microstructure- and optic-related characteristics of magnesium oxide thin film." In Optical Engineering + Applications, edited by Jennifer D. T. Kruschwitz and Michael J. Ellison. SPIE, 2008. http://dx.doi.org/10.1117/12.794865.
Повний текст джерелаKephart, Jason M., and W. S. Sampath. "Gallium-doped magnesium zinc oxide (GMZO) transparent conducting oxide layers for CdTe thin-film photovoltaics." In 2015 IEEE 42nd Photovoltaic Specialists Conference (PVSC). IEEE, 2015. http://dx.doi.org/10.1109/pvsc.2015.7355899.
Повний текст джерелаChayed, Nor Fadilah, Nurhanna Badar, Roshidah Rusdi, Norashikin Kamarudin, Norlida Kamarulzaman, Muhammed Hasan Aslan, Ahmet Yayuz Oral, Mehmet Özer, and Süleyman Hikmet Çaglar. "Optical Band Gap Energies of Magnesium Oxide (MgO) Thin Film and Spherical Nanostructures." In INTERNATIONAL CONGRESS ON ADVANCES IN APPLIED PHYSICS AND MATERIALS SCIENCE. AIP, 2011. http://dx.doi.org/10.1063/1.3663137.
Повний текст джерелаChoi, Young-Wook, and Jeehyun Kim. "Large area deposition technique of magnesium oxide thin film for plasma display panel applications." In ICO20:Display Devices and Systems, edited by Tatsuo Uchida, Xu Liu, and Hang Song. SPIE, 2006. http://dx.doi.org/10.1117/12.667358.
Повний текст джерелаUddin, Ghulam Moeen, Bing Sun, Katherine Ziemer, Abe Zeid, and Sagar Kamarthi. "Monte Carlo Study of the Molecular Beam Epitaxy Process for Manufacturing Iron Oxide Nano Scale Films and Similarities With Magnesium Oxide Films." In ASME 2011 International Mechanical Engineering Congress and Exposition. ASMEDC, 2011. http://dx.doi.org/10.1115/imece2011-65570.
Повний текст джерелаSinha, Mangalika, R. K. Gupta, P. Dasilva, P. Mercere, and Mohammed H. Modi. "Modification of optical properties of magnesium oxide (MgO) thin film under the influence of ambience." In DAE SOLID STATE PHYSICS SYMPOSIUM 2019. AIP Publishing, 2020. http://dx.doi.org/10.1063/5.0017048.
Повний текст джерелаVedam, K., and S. Y. Kim. "Simultaneous Determination of Refractive Index, Its Dispersion and Depth Profile of Magnesium Oxide Thin Film by Spectroscopic Ellipsometry." In Optical Interference Coatings. Washington, D.C.: Optica Publishing Group, 1988. http://dx.doi.org/10.1364/oic.1988.pdp7.
Повний текст джерелаBittau, Francesco, Elisa Artegiani, Ali Abbas, Daniele Menossi, Alessandro Romeo, Jake W. Bowers, and John M. Walls. "Magnesium-doped Zinc Oxide as a High Resistance Transparent Layer for thin film CdS/CdTe solar cells." In 2017 IEEE 44th Photovoltaic Specialists Conference (PVSC). IEEE, 2017. http://dx.doi.org/10.1109/pvsc.2017.8366785.
Повний текст джерелаUddin, Ghulam Moeen, Katherine Ziemer, Abe Zeid, and Sagar Kamarthi. "Study of Lattice Strain Propagation in Molecular Beam Epitaxy of Nano Scale Magnesium Oxide Thin Film on 6H-SiC Substrates Using Neural Network Computer Models." In ASME 2012 International Mechanical Engineering Congress and Exposition. American Society of Mechanical Engineers, 2012. http://dx.doi.org/10.1115/imece2012-87015.
Повний текст джерелаЗвіти організацій з теми "Magnesium oxide thin film"
Li, Sonny Xiao-zhe. Nitrogen doped zinc oxide thin film. Office of Scientific and Technical Information (OSTI), January 2003. http://dx.doi.org/10.2172/821916.
Повний текст джерелаSAULT, ALLEN G., JASON E. MUDD, JAMES E. MILLER, JUDITH A. RUFFNER, MARK A. RODRIGUEZ, and RALPH G. TISSOT, JR. Thin Film Models of Magnesium Orthovanadate Catalysts for Oxidative Dehydrogenation. Office of Scientific and Technical Information (OSTI), March 2001. http://dx.doi.org/10.2172/776352.
Повний текст джерелаHaridoss, P., E. Hellstrom, F. H. Garzon, D. R. Brown, and M. Hawley. Thin film ionic conductors based on cerium oxide. Office of Scientific and Technical Information (OSTI), December 1994. http://dx.doi.org/10.2172/10103830.
Повний текст джерелаDr. Harlan U. Anderson. Microporous and Thin Film Membranes for Solid Oxide Fuel. Office of Scientific and Technical Information (OSTI), February 2007. http://dx.doi.org/10.2172/908515.
Повний текст джерелаShaban, Mohamed, G. F. Attia, Mohamed A. Basyooni, and Hany Hamdy. Synthesis and characterization of Tin oxide thin film, effect of annealing on multilayer film. Edited by Lotfia Elnai and Ramy Mawad. Journal of Modern trends in physics research, December 2014. http://dx.doi.org/10.19138/mtpr/(14)90-99.
Повний текст джерелаLad, Robert J. Structural, electronic and chemical properties of metal/oxide and oxide/oxide interfaces and thin film structures. Office of Scientific and Technical Information (OSTI), December 1999. http://dx.doi.org/10.2172/758832.
Повний текст джерелаNguyen Minh and Kurt Montgomery. TAPE CALENDERING MANUFACTURING PROCESS FOR MULTILAYER THIN-FILM SOLID OXIDE FUEL CELLS. Office of Scientific and Technical Information (OSTI), October 2004. http://dx.doi.org/10.2172/835848.
Повний текст джерелаJie Guan and Nguyen Minh. MATERIAL AND PROCESS DEVELOPMENT LEADING TO ECONOMICAL HIGH-PERFORMANCE THIN-FILM SOLID OXIDE FUEL CELLS. Office of Scientific and Technical Information (OSTI), October 2003. http://dx.doi.org/10.2172/822898.
Повний текст джерелаJie Guan and Nguyen Minh. MATERIAL AND PROCESS DEVELOPMENT LEADING TO ECONOMICAL HIGH-PERFORMANCE THIN-FILM SOLID OXIDE FUEL CELLS. Office of Scientific and Technical Information (OSTI), December 2003. http://dx.doi.org/10.2172/822899.
Повний текст джерелаJie Guan, Atul Verma, and Nguyen Minh. MATERIAL AND PROCESS DEVELOPMENT LEADING TO ECONOMICAL HIGH-PERFORMANCE THIN-FILM SOLID OXIDE FUEL CELLS. Office of Scientific and Technical Information (OSTI), April 2003. http://dx.doi.org/10.2172/822139.
Повний текст джерела