Добірка наукової літератури з теми "Infrared optoelectronics"
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Статті в журналах з теми "Infrared optoelectronics"
Zhuravlyova, L. M., M. R. Ivashevsky, and I. F. Muzafarov. "NEW MATERIALS IN OPTOELECTRONICS." World of Transport and Transportation 16, no. 2 (April 28, 2018): 74–83. http://dx.doi.org/10.30932/1992-3252-2018-16-2-7.
Повний текст джерелаJOHNSTONE, DANIEL K. "THERMAL MANAGEMENT IN OPTOELECTRONICS." International Journal of High Speed Electronics and Systems 12, no. 02 (June 2002): 501–10. http://dx.doi.org/10.1142/s0129156402001411.
Повний текст джерелаGubbin, Christopher R., Simone De Liberato, and Thomas G. Folland. "Surface phonon polaritons for infrared optoelectronics." Journal of Applied Physics 131, no. 3 (January 21, 2022): 030901. http://dx.doi.org/10.1063/5.0064234.
Повний текст джерелаMonroy, E., F. Guillot, S. Leconte, E. Bellet-Amalric, L. Nevou, L. Doyennette, M. Tchernycheva, et al. "III-Nitride Nanostructures for Infrared Optoelectronics." Acta Physica Polonica A 110, no. 3 (September 2006): 295–301. http://dx.doi.org/10.12693/aphyspola.110.295.
Повний текст джерелаKrier, A. "Mid-infrared optoelectronics materials and devices." III-Vs Review 9, no. 2 (April 1996): 77. http://dx.doi.org/10.1016/s0961-1290(96)80025-1.
Повний текст джерелаJoullié, A. "Editorial: Mid-infrared optoelectronics: materials and devices." IEE Proceedings - Optoelectronics 149, no. 1 (February 1, 2002): 21. http://dx.doi.org/10.1049/ip-opt:20020166.
Повний текст джерелаHaywood, S. "Editorial: Mid-infrared optoelectronics materials and devices." IEE Proceedings - Optoelectronics 150, no. 4 (2003): 281. http://dx.doi.org/10.1049/ip-opt:20030871.
Повний текст джерелаLhuillier, Emmanuel, and Philippe Guyot-Sionnest. "Recent Progresses in Mid Infrared Nanocrystal Optoelectronics." IEEE Journal of Selected Topics in Quantum Electronics 23, no. 5 (September 2017): 1–8. http://dx.doi.org/10.1109/jstqe.2017.2690838.
Повний текст джерелаSchöler, Michael, Maximilian W. Lederer, and Peter J. Wellmann. "Deep Electronic Levels in n-Type and p-Type 3C-SiC." Materials Science Forum 963 (July 2019): 297–300. http://dx.doi.org/10.4028/www.scientific.net/msf.963.297.
Повний текст джерелаAssali, S., A. Attiaoui, S. Koelling, M. R. M. Atalla, A. Kumar, J. Nicolas, F. A. Chowdhury, C. Lemieux-Leduc, and O. Moutanabbir. "Micrometer-thick, atomically random Si0.06Ge0.90Sn0.04 for silicon-integrated infrared optoelectronics." Journal of Applied Physics 132, no. 19 (November 21, 2022): 195305. http://dx.doi.org/10.1063/5.0120505.
Повний текст джерелаДисертації з теми "Infrared optoelectronics"
Badioli, Michela. "Graphene optoelectronics from the visible to the mid-infrared." Doctoral thesis, Universitat Politècnica de Catalunya, 2015. http://hdl.handle.net/10803/336097.
Повний текст джерелаDesde su descubrimiento en 2004, el grafeno, una sola capa átomos de carbono en un retículo hexagonal, ha atraído un gran interés de la comunidad científica debido a sus propiedades electrónicas, mecánicas y ópticas extraordinarias. Los primeros estudios se centraron en el transporte electrónico, pero en los últimos años estudios en el campo de la fotónica y de las propiedades optoelectrónicas del grafeno han suscitado un mayor interés. El objetivo de esta tesis es explorar el uso del grafeno para nuevos dispositivos optoelectrónicos, adoptando diferentes enfoques para mejorar la interacción del grafeno con la luz en un amplio rango espectral, desde el rango visible hasta el infrarrojo medio. Esto incluye la investigación de la interacción y la transferencia de energía entre un dipolo y una monocapa de grafeno cercana, así como trabajar en esquemas de fotodetección eficientes. La alta movilidad electrónica, la absorción de banda ancha, la flexibilidad y las propiedades optoelectrónicas sintonizables (véase Capítulo 1) hacen que el grafeno sea extremadamente atractivo para el desarrollo de aplicaciones optoelectrónicas con nuevas propiedades funcionalidades. En cuanto a los dispositivos, el punto de partida de los experimentos presentados en esta tesis son transistores de efecto de campo con diferentes geometrías, cuya fabricación y técnicas de caracterización se describen en el Capítulo 2. La capacidad de ajuste de las propiedades optoelectrónicas a través del control de la energía de Fermi es una característica esencial de los dispositivos, y se logra con la aplicación de un voltaje de puerta. Nos dirigimos a ambos aspectos a la base de la optoelectrónica, es decir, el control de las propiedades ópticas con campos eléctricos y la modificación de magnitudes eléctricas, como la corriente con la luz incidente. Por tanto, la primera parte de la tesis (Capítulos 3, 4 y 5) se dedica al estudio de la nanofotónica y plasmónica del grafeno, mientras que la segunda parte se ocupa de fotodetección basada en grafeno (Capítulos 6, 7, 8 y 9). En el Capítulo 3, se explican los principales conceptos del campo de la nanofotónica de grafeno, como la capacidad de ajuste eléctrico y el fuerte confinamiento de los plasmones 2D, así como el acoplamiento de un emisor óptico con los plasmones o pares electrón-hueco. Luego se presentan dos experimentos que muestran el control de la luz por medio de campos eléctricos estáticos. En el Capítulo 4 se muestra el control eléctrico de las vías de relajación de iones de erbio en las proximidades de una monocapa de grafeno: el flujo de energía a partir de los emisores se puede dirigir a pares electrón-hueco en el grafeno, a fotones y a plasmones cambiando el nivel de Fermi del grafeno. En el Capítulo 5 se presenta la excitación y el ajuste de plasmones de grafeno altamente confinados en el infrarrojo medio, activado mediante el dipolo de una punta de microscopia de campo cercano (Capítulo 5). En el Capítulo 6 se revisan los fotodetectores de grafeno existentes y los principales mecanismos que permitan fotodetección con grafeno. A continuación se presentan tres casos donde la fotorrespuesta del grafeno se mejora con la explotación de la interacción con los materiales circundantes. Un fototransistor híbrido de grafeno y puntos cuánticos (véase Capitulo 7) llega a responsividad extremadamente alta en el visible y infrarrojo cercano (más de un millón de A/W). En el Capítulo 8 se demuestra cómo la excitación de fonones de bulk de un sustrato polar aumenta la fotocorriente en el infrarrojo medio a través de un efecto fototermoeléctrico. También fonones superficie del sustrato, lanzados por la iluminación de un borde de metal con luz polarizada perpendicularmente, conducen a un aumento en la fotorrespuesta (Capítulo 9). Los resultados presentados en esta tesis abren nuevos caminos en el campo de la optoelectrónica basada en el grafeno en el campo de la nano-fotónica activa y de los sensores
Cook, Neil B. "Growth and characterisation of pentanary GaInAsSbP Alloys for mid-infrared optoelectronics." Thesis, Lancaster University, 2009. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.536032.
Повний текст джерелаLivache, Clément. "Quantum-confined nanocrystals for infrared optoelectronics : carrier dynamics and intraband transitions". Electronic Thesis or Diss., Sorbonne université, 2019. http://www.theses.fr/2019SORUS216.
Повний текст джерелаColloidal nanocrystals are crystalline objects grown by colloidal chemistry approaches. Thanks to quantum confinement, their optical properties depend on their size, and can then be tuned accordingly. Using mercury selenide and mercury telluride, we grow infrared-absorbing nanocrystals. While HgTe nanocrystals interband gap can be tuned from the NIR to the MWIR, HgSe nanocrystals display self-doping and intraband transitions in the MWIR to LWIR. With a careful control of their surface chemistry, those nanocrystals can be integrated into electrical devices to create cheap infrared photodetectors. In my PhD work, I am interested in probing carrier dynamics in those devices using various time-resolved techniques, either based on photocurrent measurements or on direct observation of the photocarriers relaxation. From dynamic study of HgSe intraband devices, I identify the issue brought by the degenerative doping level of those nanocrystals: transport is driven by the doping of this material, resulting in very poor IR-sensing performances. By taking inspiration from the III-V semiconductor developments, I propose several successful approaches to uncouple optical and transport properties in HgSe-based, MWIR detectors
Norton, Dennis Thomas Jr. "Type-II InAs/GaSb superlattice LEDs: applications for infrared scene projector systems." Diss., University of Iowa, 2013. https://ir.uiowa.edu/etd/5031.
Повний текст джерелаDOMINICI, STEFANO. "Numerical investigation of efficiency loss mechanisms in light emitting diodes and determination of radiative and non-radiative lifetimes for infrared optoelectronics." Doctoral thesis, Politecnico di Torino, 2017. http://hdl.handle.net/11583/2669184.
Повний текст джерелаDuperron, Matthieu. "Conception et caractérisation de nanoantennes plasmoniques pour la photodétection infrarouge refroidie." Thesis, Troyes, 2013. http://www.theses.fr/2013TROY0030/document.
Повний текст джерелаThe market for cooled infrared imaging technologies is growing fast due to a range of applications covering military, commercial and space. Current research for innovative systems focuses on high operating temperature and multispectral detectors.To achieve these aims, optical resonators can be used to concentrate electromagnetic fields in thin absorbing media. This thesis investigates the possibility of using plasmonic resonators for HgCdTe photodetection.Temporal coupled-mode theory is used to optimise analytically the absorption in a plasmonic resonator incorporating an absorbing semiconductor subject to the critical coupling condition. A design of a thin plasmonic HgCdTe diode is then described. This includes a hybrid plasmonic mode arising from the coupling between a surface plasmon and a cavity gap-plasmon mode
Hollingworth, Andrew Roy. "Semiconductor optoelectronic infrared spectroscopy." Thesis, University of Surrey, 2001. http://epubs.surrey.ac.uk/842674/.
Повний текст джерелаJollivet, Arnaud. "Dispositifs infrarouges à cascade quantique à base de semiconducteurs GaN/AlGaN et ZnO/ZnMgO." Thesis, Université Paris-Saclay (ComUE), 2019. http://www.theses.fr/2019SACLS058/document.
Повний текст джерелаThis manuscript focuses on the study and on the development of semiconductor heterostructures based on GaN and ZnO material. These materials are particularly promising for the development of infrared optoelectronic intersubband devices in particular for quantum cascade devices. These semiconductors own several advantages to design quantum cascade devices such as a large conduction band offset and a large energy of the LO phonon. These properties predict the possibility to develop devices covering a large spectral range from near-infrared to terahertz and offer the possibility to realize terahertz quantum cascade lasers operating at room temperature
Giannopoulos, Mihail. "Tunable bandwidth quantum well infrared photo detector (TB-QWIP)." Thesis, Monterey, Calif. : Springfield, Va. : Naval Postgraduate School ; Available from National Technical Information Service, 2003. http://library.nps.navy.mil/uhtbin/hyperion-image/03Dec%5FGiannopoulos.pdf.
Повний текст джерелаThesis advisor(s): Gamani Karunasiri, James Luscombe. Includes bibliographical references (p. 59-61). Also available online.
Cheetham, Kieran James. "GaInAsSbP alloys for mid-infrared optoelectronic devices." Thesis, Lancaster University, 2011. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.618809.
Повний текст джерелаКниги з теми "Infrared optoelectronics"
Krier, Anthony, ed. Mid-infrared Semiconductor Optoelectronics. London: Springer London, 2006. http://dx.doi.org/10.1007/1-84628-209-8.
Повний текст джерелаNunley, William. Infrared optoelectronics: Devices and applications. New York: M. Dekker, 1987.
Знайти повний текст джерелаDave, Birtalan, Nunley William 1928-, and Nunley William 1928-, eds. Optoelectronics: Infrared-visible-ultraviolet devices and applications. 2nd ed. Boca Raton: CRC Press, 2009.
Знайти повний текст джерелаJ, Brown Gail, and Razeghi M, eds. Photodetectors: Materials and devices IV : 27-29 January 1999, San Jose, California. Bellingham, Wash., USA: SPIE, 1999.
Знайти повний текст джерелаInfrared, Sensors Devices and Applications (Conference) (3rd 2013 San Diego Calif ). Infrared Sensors, Devices, and Applications III: 26-28 August 2013, San Diego, California, United States. Bellingham, Washington: SPIE, 2013.
Знайти повний текст джерелаW, Bryant Richard, and Business Communications Co, eds. Advanced optical materials, infrared, ultraviolet broadband, and solid state laser media. Norwalk, Conn., U.S.A: Business Communications Co., 1987.
Знайти повний текст джерелаFedorovich, Sizov Fedor, Teterkin Vladimir V, Society of Photo-optical Instrumentation Engineers. Ukraine Chapter., Institut poluprovodnikov (Akademii͡a︡ nauk Ukraïny)., and Uz͡h︡horodsʹkyĭ derz͡h︡avnyĭ universytet, eds. Material science and material properties for infrared optoelectronics: 30 September-2 October, Uzhgorod, Ukraine. Bellingham, Washington: SPIE, 1997.
Знайти повний текст джерелаFedorovich, Sizov Fedor, Institut poluprovodnikov (Akademii͡a︡ nauk Ukraïny), Akademii͡a︡ nauk Ukraïny, and Society of Photo-optical Instrumentation Engineers., eds. Fourth International Conference on Material Science and Material Properties for Infrared Optoelectronics: 29 September-2 October 1998, Kiev, Ukraine. Bellingham, Wash., USA: SPIE, 1999.
Знайти повний текст джерелаFedorovich, Sizov Fedor, Kostyukevych Sergey, Institut poluprovodnikov (Akademii͡a︡ nauk Ukraïny), Society of Photo-optical Instrumentation Engineers. Ukraine Chapter., Ukraine. Ministerstvo osvity i nauky., Ukrainian Physical Society, and Society of Photo-optical Instrumentation Engineers., eds. Fifth International Conference on Material Science and Material Properties for Infrared Optoelectronics: 22-24 May, 2000, Kiev, Ukraine. Bellingham, Washington: SPIE, 2001.
Знайти повний текст джерелаFedorovich, Sizov Fedor, Gumenjuk-Sichevska Johanna V, Kostyukevych Sergey, Institut poluprovodnikov (Akademii͡a︡ nauk Ukraïny), Society of Photo-optical Instrumentation Engineers. Ukraine Chapter., Akademii͡a︡ nauk Ukraïny, Ukraine. Ministerstvo osvity i nauky., and Society of Photo-optical Instrumentation Engineers., eds. Sixth International Conference on Material Science and Material Properties for Infrared Optoelectronics: 22-24 May 2002, Kiev, Ukraine. Bellingham, Wash., USA: SPIE, 2003.
Знайти повний текст джерелаЧастини книг з теми "Infrared optoelectronics"
Rogalski, Antoni, and Krzysztof Chrzanowski. "Infrared devices and techniques." In Handbook of Optoelectronics, 633–86. Second edition. | Boca Raton : Taylor & Francis, CRC Press,: CRC Press, 2017. http://dx.doi.org/10.1201/9781315157009-18.
Повний текст джерелаOlesberg, J. T., and M. E. Flatté. "Theory of Mid-wavelength Infrared Laser Active Regions: Intrinsic Properties and Design Strategies." In Mid-infrared Semiconductor Optoelectronics, 3–92. London: Springer London, 2006. http://dx.doi.org/10.1007/1-84628-209-8_1.
Повний текст джерелаCockburn, J. "Mid-infrared Quantum Cascade Lasers." In Mid-infrared Semiconductor Optoelectronics, 323–55. London: Springer London, 2006. http://dx.doi.org/10.1007/1-84628-209-8_10.
Повний текст джерелаKrier, A., X. L. Huang, and V. V. Sherstnev. "Mid-infrared Electroluminescence in LEDs Based on InAs and Related Alloys." In Mid-infrared Semiconductor Optoelectronics, 359–94. London: Springer London, 2006. http://dx.doi.org/10.1007/1-84628-209-8_11.
Повний текст джерелаMatveev, Boris A. "LED-Photodiode Opto-pairs." In Mid-infrared Semiconductor Optoelectronics, 395–428. London: Springer London, 2006. http://dx.doi.org/10.1007/1-84628-209-8_12.
Повний текст джерелаHaywood, S., K. T. Lai, and M. Missous. "QWIP Detectors for the MWIR." In Mid-infrared Semiconductor Optoelectronics, 429–52. London: Springer London, 2006. http://dx.doi.org/10.1007/1-84628-209-8_13.
Повний текст джерелаAshley, T., and G. R. Nash. "Negative Luminescence." In Mid-infrared Semiconductor Optoelectronics, 453–85. London: Springer London, 2006. http://dx.doi.org/10.1007/1-84628-209-8_14.
Повний текст джерелаBhattacharya, P., A. D. Stiff-Roberts, and S. Chakrabarti. "Mid-infrared Quantum Dot Photodetectors." In Mid-infrared Semiconductor Optoelectronics, 487–513. London: Springer London, 2006. http://dx.doi.org/10.1007/1-84628-209-8_15.
Повний текст джерелаWei, Y., A. Gin, and M. Razeghi. "Quantum Photovoltaic Devices Based on Antimony Compound Semiconductors." In Mid-infrared Semiconductor Optoelectronics, 515–45. London: Springer London, 2006. http://dx.doi.org/10.1007/1-84628-209-8_16.
Повний текст джерелаCrowder, J. G., S. D. Smith, A. Vass, and J. Keddie. "Infrared Methods for Gas Detection." In Mid-infrared Semiconductor Optoelectronics, 595–613. London: Springer London, 2006. http://dx.doi.org/10.1007/1-84628-209-8_18.
Повний текст джерелаТези доповідей конференцій з теми "Infrared optoelectronics"
Li, Sheng S., Jerome T. Chu, Jiangchi Chiang, Jung H. Lee, and Anjali Singh. "Broadband quantum well infrared photodetectors." In Optoelectronics '99 - Integrated Optoelectronic Devices, edited by Gail J. Brown and Manijeh Razeghi. SPIE, 1999. http://dx.doi.org/10.1117/12.344551.
Повний текст джерелаDupont, Emmanuel, Hui C. Liu, Margaret Buchanan, Zbigniew R. Wasilewski, Daniel St-Germain, and Paul C. Chevrette. "Pixelless infrared imaging devices based on the integration of an n-type quantum well infrared photodetector with a near-infrared light-emitting diode." In Optoelectronics '99 - Integrated Optoelectronic Devices, edited by Gail J. Brown and Manijeh Razeghi. SPIE, 1999. http://dx.doi.org/10.1117/12.344553.
Повний текст джерелаQureshi, Jawad, and Kai Shum. "Ultrafast infrared-photon-induced optoelectronic switching." In Optoelectronics '99 - Integrated Optoelectronic Devices, edited by Kong-Thon F. Tsen. SPIE, 1999. http://dx.doi.org/10.1117/12.349309.
Повний текст джерелаKruck, Peter, Carlo Sirtori, Stefano Barbieri, Philippe Collot, Julien Nagle, Mattias Beck, Jerome Faist, and Ursula Oesterle. "Mid-infrared GaAs/AlGaAs quantum cascade lasers." In Optoelectronics '99 - Integrated Optoelectronic Devices, edited by Peter Blood, Akira Ishibashi, and Marek Osinski. SPIE, 1999. http://dx.doi.org/10.1117/12.356945.
Повний текст джерелаPresting, Hartmut, Johannes Konle, Markus Hepp, Horst Kibbel, Klaus Thonke, Rolf Sauer, Wolfgang A. Cabanski, and Milan Jaros. "Mid-infrared silicon/germanium focal plane detector arrays." In Optoelectronics '99 - Integrated Optoelectronic Devices, edited by Derek C. Houghton and Eugene A. Fitzgerald. SPIE, 1999. http://dx.doi.org/10.1117/12.342804.
Повний текст джерелаOlesberg, Jonathon T., Michael E. Flatte, Bennett J. Brown, Tom C. Hasenberg, Scott A. Anson, Thomas F. Boggess, and Christoph H. Grein. "Comparison of mid-infrared laser diode active regions." In Optoelectronics '99 - Integrated Optoelectronic Devices, edited by Hong K. Choi and Peter S. Zory. SPIE, 1999. http://dx.doi.org/10.1117/12.344541.
Повний текст джерелаRogalski, Antoni, and Robert Ciupa. "InGaAs versus HgCdTe for short-wavelength infrared applications." In Optoelectronics '99 - Integrated Optoelectronic Devices, edited by Gail J. Brown and Manijeh Razeghi. SPIE, 1999. http://dx.doi.org/10.1117/12.344570.
Повний текст джерелаKeraenen, Kimmo, Martti Blomberg, Outi Rusanen, Pentti Karioja, Jussi Tenhunen, Harri K. Kopola, and Ari Lehto. "Main characteristics of a miniaturized multipurpose infrared spectrometer." In Optoelectronics '99 - Integrated Optoelectronic Devices, edited by Michael R. Feldman, James G. Grote, and Mary K. Hibbs-Brenner. SPIE, 1999. http://dx.doi.org/10.1117/12.348309.
Повний текст джерелаErshov, Maxim. "Generation-recombination noise in multiple quantum well infrared photodetectors." In Optoelectronics '99 - Integrated Optoelectronic Devices, edited by Gail J. Brown and Manijeh Razeghi. SPIE, 1999. http://dx.doi.org/10.1117/12.344548.
Повний текст джерелаMalik, Alexander I., Manuela Vieira, Miguel Fernandes, Filipe Macarico, and Zinaida M. Grushka. "Near-infrared photodetectors based on a HgInTe-semiconductor compound." In Optoelectronics '99 - Integrated Optoelectronic Devices, edited by Gail J. Brown and Manijeh Razeghi. SPIE, 1999. http://dx.doi.org/10.1117/12.344582.
Повний текст джерела