Добірка наукової літератури з теми "INDUCTOR CIRCUITS"

Оформте джерело за APA, MLA, Chicago, Harvard та іншими стилями

Оберіть тип джерела:

Ознайомтеся зі списками актуальних статей, книг, дисертацій, тез та інших наукових джерел на тему "INDUCTOR CIRCUITS".

Біля кожної праці в переліку літератури доступна кнопка «Додати до бібліографії». Скористайтеся нею – і ми автоматично оформимо бібліографічне посилання на обрану працю в потрібному вам стилі цитування: APA, MLA, «Гарвард», «Чикаго», «Ванкувер» тощо.

Також ви можете завантажити повний текст наукової публікації у форматі «.pdf» та прочитати онлайн анотацію до роботи, якщо відповідні параметри наявні в метаданих.

Статті в журналах з теми "INDUCTOR CIRCUITS"

1

Singh, Amrita, Manoj Kumar Jain, and Subodh Wairya. "Novel Lossless Grounded and Floating Inductance Simulators Employing a Grounded Capacitor Based on CC-CFA." Journal of Circuits, Systems and Computers 28, no. 06 (June 12, 2019): 1950093. http://dx.doi.org/10.1142/s0218126619500932.

Повний текст джерела
Анотація:
Simulation of inductors has been a very popular area of analog circuit research and the alternative choice for realizing inductor-based circuits in integrated circuits. In this paper, lossless, grounded and floating inductor topologies using current-controlled-current-feedback amplifier (CC-CFA) with single grounded capacitor are presented. The proposed topologies can be tuned electronically by changing the biasing current of the CC-CFA. Two topologies for grounded inductor simulator employ two CC-CFA and one grounded capacitor. One topology for floating inductor simulator employs three CC-CFA and one grounded capacitor. The performance of the grounded and floating inductor simulators are demonstrated on resonant circuits. The theoretical analysis is verified by PSPICE simulation results.
Стилі APA, Harvard, Vancouver, ISO та ін.
2

Muneeswaran, Dhamodaran, Jegadeesan Subramani, Thanapal Pandi, Navaneethan Chenniappan, and Meenatchi Shanmugam. "Modelling of Different On-chip Inductors for Radio Frequency Integrated Circuits." Proceedings of the Bulgarian Academy of Sciences 75, no. 10 (October 30, 2022): 1491–98. http://dx.doi.org/10.7546/crabs.2022.10.12.

Повний текст джерела
Анотація:
This paper presents a typical frequency-dependent modelling of different on-chip inductors for RFICs design problems. Modern RF circuits often feature on-chip inductors required by modern circuit design. A comparison of different inductor geometrics includes a planar spiral inductor and novel multilayer inductors are analyzed. An electromagnetic model with fewer assumptions than empirical equations and higher efficiency than full-field solvers would be welcome. So would facile comparisons of different inductor structures. This paper describes recent work on the electromagnetic modelling of on-chip inductor structures, applied to the comparison of inductor geometries, including the traditional spiral inductor and a novel multilayer inductor. The electromagnetic modelling of the investigative model is also presented.
Стилі APA, Harvard, Vancouver, ISO та ін.
3

Chen, Zhenwei, Wei Tang, Ze Li, and Jiaqi Lan. "Design and Experimental Analysis of Charge Recovery for Piezoelectric Fan." Actuators 11, no. 1 (January 10, 2022): 20. http://dx.doi.org/10.3390/act11010020.

Повний текст джерела
Анотація:
The piezoelectric (PE) fan is widely adopted in the field of microelectronics cooling due to its advantages of high reliability and good heat dissipation characteristics. However, PE fans driven by conventional circuits suffer from plenty of energy loss. To save energy, we propose an inductor-based charge recovery method and apply it to the driving circuit for the PE fan. Two inductor-based driving circuits, a single inductor-based driving (SID) circuit and a double inductor-based driving (DID) circuit are compared. The SID circuit has a simple structure and a slightly higher energy-saving rate, while the DID circuit introduces no additional oscillations and is more stable. The experimental results show that when the supply voltage changes, both circuits have a relatively stable energy-saving rate, which is about 30% for the SID circuit and 28% for the DID circuit. Moreover, the proposed circuits enjoy the same driving capacity as the conventional circuit, and the driven fan has the same cooling performance.
Стилі APA, Harvard, Vancouver, ISO та ін.
4

Schlachta, C., and M. Glesner. "Resonance circuits for adiabatic circuits." Advances in Radio Science 1 (May 5, 2003): 223–28. http://dx.doi.org/10.5194/ars-1-223-2003.

Повний текст джерела
Анотація:
Abstract. One of the possible techniques to reduces the power consumption in digital CMOS circuits is to slow down the charge transport. This slowdown can be achieved by introducing an inductor in the charging path. Additionally, the inductor can act as an energy storage element, conserving the energy that is normally dissipated during discharging. Together with the parasitic capacitances from the circuit a LCresonant circuit is formed.
Стилі APA, Harvard, Vancouver, ISO та ін.
5

Dmitrikov, Vladimir F., Alexander Yu Petrochenko, Vyacheslav M. Isaev, and Dmitriy V. Shushpanov. "Features of designing line radio interference filter in a wide frequency range, taking into account equivalent circuits for capacitors and inductors." Physics of Wave Processes and Radio Systems 23, no. 4 (February 11, 2021): 85–96. http://dx.doi.org/10.18469/1810-3189.2020.23.4.85-96.

Повний текст джерела
Анотація:
Based on the phenomenological equations describing the dynamic processes of magnetization of ferromagnets of inductors and polarization of capacitor dielectrics, taking into account complex frequency-dependent dielectric constants e(jw) of capacitor dielectrics and magnetic permeabilities m(jw) of inductor cores, equivalent electrical structural-parametric and capacitor replacement circuits were obtained. The connection of parasitic elements of equivalent electric circuits of capacitors and inductors with the electrophysical characteristics of the material of the dielectric of the capacitor and the inductor core, which determine their frequency properties, structure and parameters of the elements of the equivalent circuit, is established. The features of the design of line radio interference filter taking into account the parasitic parameters of the inductors and capacitors of line radio interference filter, found as a result of the synthesis of equivalent electric circuits of the inductors and capacitors in a wide frequency range of 150 kHz 30 MHz.
Стилі APA, Harvard, Vancouver, ISO та ін.
6

Blaž, Nelu, Goran Mišković, Andrea Marić, Mirjana S. Damnjanović, Goran Radosavljević, and Ljiljana Živanov. "Various Designs of Meander Inductor and their Influence on LC Resonant Displacement Sensor." Key Engineering Materials 543 (March 2013): 235–38. http://dx.doi.org/10.4028/www.scientific.net/kem.543.235.

Повний текст джерела
Анотація:
This paper deals with various configurations of meander inductor and their influence on characteristics of passive LC displacement sensor. Passive techniques use LC resonator to measure the parameters of interest remotely without an on-board power supply. Developed LC sensor comprises a fixed meander inductor and a movable module of mender inductor - interdigital capacitor resonant circuit, thereby causing the sensor resonant frequency to be displacement - dependent. The inductor and sensor circuits have been fabricated in PCB technology. The main goal was to find the optimal position for measurement connection pads on fixed meander inductor PCB as well as position of connection line between mender inductor and interdigital capacitor on PCB board with LC circuit. Measurements were realized on Impedance Analyzer (HP4191A) in frequency range from 10 MHz to 30 MHz, with 100 kHz step for each configuration of meander inductor. As results of these measurements the best configuration and the best sensor sensitivity for both mender inductors was determined.
Стилі APA, Harvard, Vancouver, ISO та ін.
7

Kamioka, J., R. Matsuda, R. Mizokuchi, J. Yoneda, and T. Kodera. "Evaluation of a physically defined silicon quantum dot for design of matching circuit for RF reflectometry charge sensing." AIP Advances 13, no. 3 (March 1, 2023): 035219. http://dx.doi.org/10.1063/5.0141092.

Повний текст джерела
Анотація:
This paper reports on the extraction of the equivalent circuit model parameters of a physically defined silicon quantum dot at a cryogenic temperature and design of the impedance matching circuits to improve the performance of a charge sensor for radio-frequency (RF) reflectometry. The I-V characteristics and the S-parameters of the quantum dot device are measured around a Coulomb peak at 4.2 K. The measured results are modeled by an RC parallel circuit, and the model parameters for the quantum dot device were obtained. We consider three impedance matching circuits for RF reflectometry of a quantum dot: shunt capacitor-series inductor type, shunt inductor-series capacitor type, and shunt inductor-series inductor-type. We formulate and compare the sensitivity and bandwidth of RF reflectometry for the three types of circuits. The analysis should be useful for selecting the optimal matching circuit and the circuit parameters for given equivalent circuit parameters and working frequency. This procedure is demonstrated for a quantum dot with the characterized model circuit along with simulated performance. This design technique of matching circuit for RF reflectometry can be applied to any device that can be represented by an RC parallel circuit. These results will facilitate to realize fast semiconductor qubit readout in various quantum dot platforms.
Стилі APA, Harvard, Vancouver, ISO та ін.
8

Xu, Wei, and Ning Cao. "A General Chaotic Circuit Design and Hardware Implementation via the Inductance Integrators." Journal of Circuits, Systems and Computers 29, no. 10 (December 16, 2019): 2050159. http://dx.doi.org/10.1142/s0218126620501595.

Повний текст джерела
Анотація:
This paper presents a scheme for the modified chaotic circuits based on inductance integration. In view of the fact that the DC resistance of an inductor in the circuit cannot be ignored, this way of constructing the circuits is provided that can eliminate its influence on the integral circuits. By means of cascading an inverting adder circuit and inductance integral circuit, the output signal of the integral circuit is fed back to the inverting adder circuit, and its additive term is artificially added to match the actual inductance integrated circuit to achieve integral circuit based on the actual inductor which can offset the effect of its DC resistance. In order to verify the generality of the design, the process of designing Lorenz chaotic circuit is given and its attractors can also be observed from the oscilloscope.
Стилі APA, Harvard, Vancouver, ISO та ін.
9

Zargarani, Anahita, and S. Nima Mahmoodi. "Circuit Optimization for Enhancing the Output Power of a Piezoelectric Energy Harvester." International Journal of Applied Science 1, no. 2 (August 29, 2018): p6. http://dx.doi.org/10.30560/ijas.v1n2p6.

Повний текст джерела
Анотація:
In this paper, a new method is proposed for improving a piezoelectric energy harvester’s output power. A piezoelectric vibration energy harvester has an inherent internal capacitance. The new approach adopts inductance to reduce the reactance of the internal capacitance and enhance the output power. To show the practicality of this method, four electrical circuits are investigated numerically and experimentally for a piezoelectric beam energy harvester: Simple Resistive Load, Inductive Load, standard AC-DC, and Inductive AC-DC circuits. An Inductive Load circuit is built by adding an inductor to a Simple Resistive Load circuit, while an Inductive AC-DC circuit is built by adding an inductor to a standard AC-DC circuit. Experimental results indicate that the Inductive Load and the Inductive AC-DC circuits avail the Simple Resistive Load and standard AC-DC circuits respectively. The inductive AC-DC circuit shows a 6.7% increase in the output power compared to the standard AC-DC circuit.
Стилі APA, Harvard, Vancouver, ISO та ін.
10

Santosa, I. E. "Permittivity Measurement Using the Resonance Circuits." Journal of Physics: Conference Series 2019, no. 1 (October 1, 2021): 012073. http://dx.doi.org/10.1088/1742-6596/2019/1/012073.

Повний текст джерела
Анотація:
Abstract A pair of LC circuits has been used to demonstrate the resonance condition of electromagnetic waves. The first circuit comprises of an inductor, a capacitor and a power supply; while the second pair employs an inductor, a variable capacitor and a neon bulb. The same inductance is applied in both circuits. The variable capacitor is a parallel plate capacitor. By varying the capacitance in the second circuit, we achieve the resonance condition as indicated by the lit neon bulb. By doing so, we observe the equal oscillation frequency in both, the first and second circuit. The condition is then used to obtain the permittivity of air to be (6.1±0.2) x10-11 F/m.
Стилі APA, Harvard, Vancouver, ISO та ін.

Дисертації з теми "INDUCTOR CIRCUITS"

1

Koon, Suet Chui. "Integrated charge-control single-inductor dual-output switching converters /." View abstract or full-text, 2004. http://library.ust.hk/cgi/db/thesis.pl?ELEC%202004%20KOON.

Повний текст джерела
Стилі APA, Harvard, Vancouver, ISO та ін.
2

Lee, Yen-Sung Michael. "Application of active inductors in high-speed I/O circuits." Thesis, University of British Columbia, 2008. http://hdl.handle.net/2429/2515.

Повний текст джерела
Анотація:
This thesis explores the use of active inductors as a compact alternative to the bulky passive spiral structures in high-speed I/O circuits. A newly proposed PMOS-based topology is introduced and used in active-inductor terminations. The 1st prototype design fabricated in a 90-nm CMOS process consists of an output driver using active-inductor terminations to provide channel equalization and output impedance matching. From measurement results, the use of active inductors in the termination, as compared to when the active inductor is disabled, increases the vertical eye opening in the receiver side by a factor of two and reduces the jitterp-p by 30% of the transmitted 10 Gb/s (2³¹-1) pseudo-random binary sequence pattern, over a 6-inch FR4 channel. An output impedance matching with S₂₂ less than -10 dB over a bandwidth of 20 GHz is achieved. The pair of active-inductor terminations occupies 17×25 µm² and has a low overhead power consumption of 0.8 mW. In the 2nd prototype design, a 4-stage output buffer with active-inductor loads is designed and implemented in a 65-nm CMOS process. Simulation results verify that when operating at 31.25 Gb/s, the output eye of the active-inductor load buffer compares favorably with that of the passive-inductor load buffer. For a similar eye-height and 78% less timing jitter the active-inductor load design’s speed (31.25 Gb/s) is 25% faster than the passive-resistor load design (25 Gb/s). The active-inductor load output buffer achieves comparable performance in terms of speed, power, and output swing with other reported designs using passive inductors. Its total area is 135×30 µm² (including three differential active inductors) which is comparable to the size of a single passive spiral inductor having a 0.5~1 nH inductance.
Стилі APA, Harvard, Vancouver, ISO та ін.
3

Chirala, Mohan Krishna. "Passive and active circuits in cmos technology for rf, microwave and millimeter wave applications." [College Station, Tex. : Texas A&M University, 2007. http://hdl.handle.net/1969.1/ETD-TAMU-2069.

Повний текст джерела
Стилі APA, Harvard, Vancouver, ISO та ін.
4

Fonseca, Junior Paulo Nazareno Lagoia. "Indutores integrados passivos para aplicações em radio frequencia." [s.n.], 2008. http://repositorio.unicamp.br/jspui/handle/REPOSIP/260576.

Повний текст джерела
Анотація:
Orientador: Luiz Carlos Kretly
Dissertação (mestrado) - Universidade Estadual de Campinas, Faculdade de Engenharia Eletrica e de Computação
Made available in DSpace on 2018-08-12T09:54:12Z (GMT). No. of bitstreams: 1 FonsecaJunior_PauloNazarenoLagoia.pdf: 5632530 bytes, checksum: ea9f82363483a872a3effe7dbd527b5f (MD5) Previous issue date: 2008
Resumo: Este trabalho tem como finalidade a implementação de indutores integrados passivos baseados nas tecnologias de fabricação CMOS e BiCMOS. Os indutores são dispositivos fundamentais em aplicações de rádio freqüência e estão presentes na maioria dos circuitos de RF como amplificadores e osciladores. Os Indutores integrados passivos têm seus desempenhos degradados principalmente pelas perdas associadas ao metal e substrato. E apesar da existência de vários métodos de otimização, as foundries em geral, ainda oferecem um número reduzido de componentes, o que dificulta a escolha do melhor dispositivo para cada circuito. Sendo assim, a partir do projeto e implementação de indutores integrados o projetista é capaz de desenvolver novos dispositivos para cada aplicação. Este trabalho apresenta os resultados experimentais de indutores CMOS otimizados com a técnica de empilhamento para a redução de perdas ôhmicas e de PGS para a redução de perdas pelo substrato. Apresenta-se também indutores projetados na tecnologia BiCMOS com dupla camada de PGS; enterrada n+ e silício policristalino.
Abstract: This work aims the design and implementation of integrated passive inductors based on CMOS and BiCMOS processes. The inductors are essential devices in radio frequency applications and are used in many RF circuits such as amplifiers and oscillators. The inductors' performance is mainly limited by metal and substrate losses. Although various methods of improvement have been proposed, the foundries still offer a reduced number of components, making far more difficult to choose the best device for each circuit. In this way, from the design and implementation of integrated inductors, the designer is able to enhance and develop new devices for each application. This works presents the experimental results of inductors based on CMOS process. These inductors have been improved with two techniques; multilevel and PGS, the first one reduce the metal losses and the second to reduce the substrate losses. This work also shows inductors improved with double PGS based on BiCMOS process. The double PGS was designed with polysilicon and n+ buried layer.
Universidade Estadual de Campi
Telecomunicações e Telemática
Mestre em Engenharia Elétrica
Стилі APA, Harvard, Vancouver, ISO та ін.
5

Stegen, Sascha. "Development of an Integrated Magnetic System Assisted by Electromagnetic Simulation." Thesis, Griffith University, 2012. http://hdl.handle.net/10072/365703.

Повний текст джерела
Анотація:
In DC/DC converter systems, power electronic circuits are reaching switching efficiencies close to 100 percent nowadays. Thus, most of the energy loss appears inside the passive magnetic circuit of the converter, which at the same time is the component that requires most space in the system. In order to battle this issue, research during the last century has been focused on planarization, hybridization and integration techniques with the goal to achieve higher efficiencies and decrease the profile and volume of the devices. In addition, higher frequencies have been applied to achieve a higher power density of the magnetic systems, but with the negative consequence of stronger parasitic effects such as proximity and skin effects inside the magnetic circuit. This thesis deals with the development of an integrated magnetic system in a L-C-T (Inductor-Capacitor-Transformer) configuration, with the assistance of Finite Element Method (FEM) computer modeling, which is supportively used to accelerate the development process. Computational simulation method is used to indicate and address the physical issues, which cannot be identified with conventional measurement methods.
Thesis (PhD Doctorate)
Doctor of Philosophy (PhD)
Griffith School of Engineering
Science, Environment, Engineering and Technology
Full Text
Стилі APA, Harvard, Vancouver, ISO та ін.
6

Yoon, Sangwoong. "LC-tank CMOS Voltage-Controlled Oscillators using High Quality Inductor Embedded in Advanced Packaging Technologies." Diss., Georgia Institute of Technology, 2004. http://hdl.handle.net/1853/4887.

Повний текст джерела
Анотація:
This dissertation focuses on high-performance LC-tank CMOS VCO design at 2 GHz. The high-Q inductors are realized using wiring metal lines in advanced packages. Those inductors are used in the resonator of the VCO to achieve low phase noise, low power consumption, and a wide frequency tuning range. In this dissertation, a fine-pitch ball-grid array (FBGA) package, a multichip module (MCM)-L package, and a wafer-level package (WLP) are incorporated to realize the high-Q inductor. The Q-factors of inductors embedded in packages are compared to those of inductors monolithically integrated on Si and GaAs substrates. All the inductors are modeled with a physical, simple, equivalent two-port model for the VCO design as well as for phase noise analysis. The losses in an LC-tank are analyzed from the phase noise perspective. For the implementation of VCOs, the effects of the interconnection between the embedded inductor and the VCO circuit are investigated. The VCO using the on-chip inductors is designed as a reference. The performance of VCOs using the embedded inductor in a FBGA and a WLP is compared with that of a VCO using the on-chip inductor. The VCO design is optimized from the high-Q perspective to enhance performance. Through this optimization, less phase noise, lower power consumption, and a wider frequency tuning range are obtained simultaneously.
Стилі APA, Harvard, Vancouver, ISO та ін.
7

Bolzan, Evandro. "Projeto de indutores ativos CMOS e a sua aplicação em VCO totalmente integrado." reponame:Repositório Institucional da UFABC, 2015.

Знайти повний текст джерела
Анотація:
Orientador: Prof. Dr. Carlos Eduardo Capovilla
Dissertação (mestrado) - Universidade Federal do ABC, Programa de Pós-Graduação em Engenharia Elétrica, 2015.
Este trabalho tem como escopo o projeto e implementação de indutores ativos integrados em tecnologia CMOS para operação em circuitos integrados de r'adio frequência. Tais sistemas demandam por indutores passivos integrados, sendo que estes geralmente apresentam baixa indutância, baixo fator de qualidade, e tamanhos relativamente grandes. Estes fatores são limitantes no projeto de circuitos integrados. Como alternativa, indutores ativos integrados têm sido propostos, com o uso de circuitos que emulam o efeito do indutor passivo convencional. Estes circuitos apresentam menor dimens¿ao, possibilidade de ajustes no valor da indut¿ancia, da frequ¿encia de opera¸c¿ao, do fator de qualidade, ao custo de consumo de pot¿encia DC e um relativo aumento no ru'ýdo total do sistema. Al'em de um profundo estudo, quatro topologias distintas de indutores ativos integrados foram abordadas e projetadas, em seguida foi projetado um VCO aplicando dois indutores ativos como ressonadores. Uma an'alise a n'ývel de projeto utilizando a t'ecnica de-embedding 'e aplicada no projeto de um indutor ativo. Os modelos dos componentes utilizados s¿ao baseados na biblioteca CMOS em alta frequ¿encia da foundry austr'ýaca AMS.
This study aimed to design and implement integrated active inductors in CMOS technology for operation in integrated radio frequency circuits. These systems demand for integrated passive inductors, and these usually have low inductance, low quality factor, and relatively large sizes. These factors are limiting in integrated circuit design. As an alternative integrated active inductors have been proposed, with the use of circuits that emulate the effect of conventional passive inductor. These circuits have smaller, the possibility for tuning the inductance value, the operation frequency, quality factor, at the cost of DC power consumption and a relative increase in total system noise. In addition to a thorough study, four different topologies ofintegrated active inductors were approached and designed, then was design a VCO applying two active inductors as resonators. An examination at the design level using the de-embedding technique is applied in the design of an active inductor. The models of the components used are based on CMOS library at high frequency of the Austrian foundry AMS.
Стилі APA, Harvard, Vancouver, ISO та ін.
8

Cambero, Eduardo Vicente Valdés. "Aplicação de indutores ativos integrados CMOS em amplificadores de baixo ruído." reponame:Repositório Institucional da UFABC, 2017.

Знайти повний текст джерела
Стилі APA, Harvard, Vancouver, ISO та ін.
9

Szilàgyi, Làszlò, Guido Belfiore, Ronny Henker, and Frank Ellinger. "20–25 Gbit/s low-power inductor-less single-chip optical receiver and transmitter frontend in 28 nm digital CMOS." Cambridge University Press, 2017. https://tud.qucosa.de/id/qucosa%3A70657.

Повний текст джерела
Анотація:
The design of an analog frontend including a receiver amplifier (RX) and laser diode driver (LDD) for optical communication system is described. The RX consists of a transimpedance amplifier, a limiting amplifier, and an output buffer (BUF). An offset compensation and common-mode control circuit is designed using switched-capacitor technique to save chip area, provides continuous reduction of the offset in the RX. Active-peaking methods are used to enhance the bandwidth and gain. The very low gate-oxide breakdown voltage of transistors in deep sub-micron technologies is overcome in the LDD by implementing a topology which has the amplifier placed in a floating well. It comprises a level shifter, a pre-amplifier, and the driver stage. The single-chip frontend, fabricated in a 28 nm bulk-digital complementary metal–oxide–semiconductor (CMOS) process has a total active area of 0.003 mm² , is among the smallest optical frontends. Without the BUF, which consumes 8 mW from a separate supply, the RX power consumption is 21 mW, while the LDD consumes 32 mW. Small-signal gain and bandwidth are measured. A photo diode and laser diode are bonded to the chip on a test-printed circuit board. Electro-optical measurements show an error-free detection with a bit error rate of 10⁻¹² at 20 Gbit/s of the RX at and a 25 Gbit/s transmission of the LDD.
Стилі APA, Harvard, Vancouver, ISO та ін.
10

Danesh, Mina. "Monolithic inductors for silicon radio frequency integrated circuits." Thesis, National Library of Canada = Bibliothèque nationale du Canada, 1999. http://www.collectionscanada.ca/obj/s4/f2/dsk1/tape8/PQDD_0007/MQ45607.pdf.

Повний текст джерела
Стилі APA, Harvard, Vancouver, ISO та ін.

Книги з теми "INDUCTOR CIRCUITS"

1

Casey, Ronan. A nonlinear inductor model for SPICE3e2. Dublin: University College Dublin, 1995.

Знайти повний текст джерела
Стилі APA, Harvard, Vancouver, ISO та ін.
2

Aguilera, Jaime. Design and test of integrated inductors for RF applications. Boston: Kluwer Academic Publishers, 2003.

Знайти повний текст джерела
Стилі APA, Harvard, Vancouver, ISO та ін.
3

Floyd, Thomas L. Principles of electric circuits. 3rd ed. Columbus: Merrill Pub. Co., 1988.

Знайти повний текст джерела
Стилі APA, Harvard, Vancouver, ISO та ін.
4

Danesh, Mina. Monolithic inductors for silicon radio frequency integrated circuits. Ottawa: National Library of Canada, 1999.

Знайти повний текст джерела
Стилі APA, Harvard, Vancouver, ISO та ін.
5

Floyd, Thomas L. Principles of electric circuits. 3rd ed. Columbus: Merrill Pub. Co, 1989.

Знайти повний текст джерела
Стилі APA, Harvard, Vancouver, ISO та ін.
6

Principles of electric circuits. 6th ed. Upper Saddle River, N.J: Prentice Hall, 2000.

Знайти повний текст джерела
Стилі APA, Harvard, Vancouver, ISO та ін.
7

Floyd, Thomas L. Principles of electric circuits. 2nd ed. Columbus, Ohio: C.E. Merrill Pub. Co., 1985.

Знайти повний текст джерела
Стилі APA, Harvard, Vancouver, ISO та ін.
8

Floyd, Thomas L. Principles of electric circuits. 4th ed. New York: Merrill, 1992.

Знайти повний текст джерела
Стилі APA, Harvard, Vancouver, ISO та ін.
9

Principles of electric circuits. 5th ed. Upper Saddle River, NJ: Prentice Hall, 1997.

Знайти повний текст джерела
Стилі APA, Harvard, Vancouver, ISO та ін.
10

Floyd, Thomas L. Principles of electric circuits. 4th ed. New York: Merrill, 1993.

Знайти повний текст джерела
Стилі APA, Harvard, Vancouver, ISO та ін.

Частини книг з теми "INDUCTOR CIRCUITS"

1

Maurath, Dominic, and Yiannos Manoli. "Switched-Inductor Capacitive Interface." In CMOS Circuits for Electromagnetic Vibration Transducers, 215–40. Dordrecht: Springer Netherlands, 2014. http://dx.doi.org/10.1007/978-94-017-9272-1_8.

Повний текст джерела
Стилі APA, Harvard, Vancouver, ISO та ін.
2

Chen, Ke-Horng. "Single-Inductor Multiple-Output DC–DC Buck Converter." In Power Management Integrated Circuits, 43–70. Boca Raton : Taylor & Francis Group, 2016. | Series: Devices, circuits, and systems: CRC Press, 2017. http://dx.doi.org/10.1201/9781315373362-2.

Повний текст джерела
Стилі APA, Harvard, Vancouver, ISO та ін.
3

Salah, Khaled, Yehea Ismail, and Alaa El-Rouby. "TSV Design Applications: TSV-Based On-Chip Spiral Inductor, TSV-Based On-Chip Wireless Communications, and TSV-Based Bandpass Filter." In Analog Circuits and Signal Processing, 103–31. Cham: Springer International Publishing, 2014. http://dx.doi.org/10.1007/978-3-319-07611-9_6.

Повний текст джерела
Стилі APA, Harvard, Vancouver, ISO та ін.
4

Goh, Josephine Gloria Ling Ling, Marwan Nafea, and Mohamed Sultan Mohamed Ali. "Design of Inductor-Capacitor Circuits for Wireless Power Transfer for Biomedical Applications." In Advances in Robotics, Automation and Data Analytics, 81–90. Cham: Springer International Publishing, 2021. http://dx.doi.org/10.1007/978-3-030-70917-4_9.

Повний текст джерела
Стилі APA, Harvard, Vancouver, ISO та ін.
5

Zeng, Gengsheng Lawrence, and Megan Zeng. "Inductors." In Electric Circuits, 105–10. Cham: Springer International Publishing, 2021. http://dx.doi.org/10.1007/978-3-030-60515-5_15.

Повний текст джерела
Стилі APA, Harvard, Vancouver, ISO та ін.
6

Bartlett, Jonathan. "Inductors and Capacitors in Circuits." In Electronics for Beginners, 315–21. Berkeley, CA: Apress, 2020. http://dx.doi.org/10.1007/978-1-4842-5979-5_21.

Повний текст джерела
Стилі APA, Harvard, Vancouver, ISO та ін.
7

Lenaerts, Bert, and Robert Puers. "Magnetic Induction." In Analog Circuits and Signal Processing, 13–37. Dordrecht: Springer Netherlands, 2009. http://dx.doi.org/10.1007/978-1-4020-9075-2_2.

Повний текст джерела
Стилі APA, Harvard, Vancouver, ISO та ін.
8

Boldea, Ion. "Steady-State Equivalent Circuit and Performance." In Induction Machines Handbook, 143–87. Third edition. | Boca Raton: CRC Press, 2020. |: CRC Press, 2020. http://dx.doi.org/10.1201/9781003033417-7.

Повний текст джерела
Стилі APA, Harvard, Vancouver, ISO та ін.
9

Salam, Md Abdus, and Quazi Mehbubar Rahman. "Capacitors and Inductors." In Fundamentals of Electrical Circuit Analysis, 177–235. Singapore: Springer Singapore, 2018. http://dx.doi.org/10.1007/978-981-10-8624-3_5.

Повний текст джерела
Стилі APA, Harvard, Vancouver, ISO та ін.
10

Sabah, Nassir H. "Capacitors, Inductors, and Duality." In Circuit Analysis with PSpice, 167–200. Boca Raton : Taylor & Francis, CRC Press, 2017.: CRC Press, 2017. http://dx.doi.org/10.1201/9781315402222-7.

Повний текст джерела
Стилі APA, Harvard, Vancouver, ISO та ін.

Тези доповідей конференцій з теми "INDUCTOR CIRCUITS"

1

Pierzchala, Marian, and Mourad Fakhfakh. "Generation of active inductor circuits." In 2010 IEEE International Symposium on Circuits and Systems - ISCAS 2010. IEEE, 2010. http://dx.doi.org/10.1109/iscas.2010.5537166.

Повний текст джерела
Стилі APA, Harvard, Vancouver, ISO та ін.
2

Zargarani, Anahita, and S. Nima Mahmoodi. "Enhancing the Output Power of a Piezoelectric Energy Harvester by Reducing the Effect of the Internal Capacitance Using Inductance." In ASME 2016 Conference on Smart Materials, Adaptive Structures and Intelligent Systems. American Society of Mechanical Engineers, 2016. http://dx.doi.org/10.1115/smasis2016-9288.

Повний текст джерела
Анотація:
This paper describes an innovative method for enhancing the power output of a piezoelectric energy harvester. The proposed approach is adopting inductance to reduce the effect of the internal capacitance of the piezoelectric harvester to boost the power output. Four electrical circuits for a piezoelectric beam harvester are studied; Simple Resistive Load (SRL), Inductive Load (IL), Standard AC-DC, and Inductive AC-DC circuits. An inductor is added to the SRL and standard AC-DC circuits to build the new IL and Inductive AC-DC circuits respectively. The power outputs of the four circuits are then studied. The results show that the adaptation of inductor enhances the power output. The IL circuit enhances the power output comparing to the SRL circuit. The Inductive AC-DC circuit also avails the standard AC-DC circuit.
Стилі APA, Harvard, Vancouver, ISO та ін.
3

Lu, Yin-lung, Yung-huei Lee, William McMahon, and Tze-ching Fung. "Robust Inductor Design for RF Circuits." In IEEE Custom Integrated Circuits Conference 2006. IEEE, 2006. http://dx.doi.org/10.1109/cicc.2006.320993.

Повний текст джерела
Стилі APA, Harvard, Vancouver, ISO та ін.
4

Hegendörfer, Andreas, and Julia Mergheim. "Finite Element Simulation and Comparison of Piezoelectric Vibration-Based Energy Harvesters with Advanced Electric Circuits." In VI ECCOMAS Young Investigators Conference. València: Editorial Universitat Politècnica de València, 2021. http://dx.doi.org/10.4995/yic2021.2021.12177.

Повний текст джерела
Анотація:
A system simulation method based on the Finite-Element Method (FEM) is applied to simulate a bimorph piezoelectric vibration-based energy harvester (PVEH) with different electric circuits: The standard circuit, the synchronized switch harvesting on inductor (SSHI) circuit and the synchronized electric charge extraction (SECE) circuit are considered. Moreover, nonlinear elasticity of the piezoelectric material is taken into account and different magnitudes of base excitations are applied. The holistic FEM-based system simulation approach allows the detailed evaluation of the influences of the considered electric circuits on the vibrational behavior of the PVEH. Furthermore, the harvested energy of the different applied electric circuits with respect to the magnitude of base excitation is compared and results from literature regarding the efficiency of electric circuits are confirmed.
Стилі APA, Harvard, Vancouver, ISO та ін.
5

Bolyukh, Vladimir F., and Igor I. Katkov. "Cryogenic Cooling System “KrioBlast” Increased Efficiency and Lowered the Operation Time of Protective Electrical Induction-Induced Devices." In ASME 2013 International Mechanical Engineering Congress and Exposition. American Society of Mechanical Engineers, 2013. http://dx.doi.org/10.1115/imece2013-62383.

Повний текст джерела
Анотація:
Main electromagnetic and thermal characteristics of cryoresistive windings (CRW) are systematized; and based on these results a mathematical model of an induction-dynamic device (IDD) is developed. Active elements of the IDD are cooled by liquid nitrogen. To calculate the IDD’s working processes a numerical-analytical approach is used. Within a small interval of time analytical expressions for the main values are calculated. The transient process is modeled on a computer program by iterative relations and time loops. In the calculation the IDD’s armature is represented as a set of elementary short-circuited circuits uniformly distributed on a disk’s surface, and the multi-turn inductor is represented by a primary circuit connected to the capacitance energy storage (CES). On the base of the carried out mathematical modeling it is demonstrated that the most effective is the cryogenic cooling of the armature for which a minimal amount of cryogen is required. At the simultaneous cooling of the inductor and the armature the IDD’s efficiency increases 24 times. It is shown that in case of the use of a ferromagnetic core as an alternative to a cryogenic cooling, the IDD’s efficiency increase is much lower. The validity of the proposed mathematical model and obtained numerical results is demonstrated on the base of experimental modeling.
Стилі APA, Harvard, Vancouver, ISO та ін.
6

del Mar Hershenson, Maria, Sunderarajan S. Mohan, Stephen P. Boyd, and Thomas H. Lee. "Optimization of inductor circuits via geometric programming." In the 36th ACM/IEEE conference. New York, New York, USA: ACM Press, 1999. http://dx.doi.org/10.1145/309847.310112.

Повний текст джерела
Стилі APA, Harvard, Vancouver, ISO та ін.
7

Zhang, Guang Fei, and J. L. Gautier. "Novel floating active inductor for MMIC circuits." In 23rd European Microwave Conference, 1993. IEEE, 1993. http://dx.doi.org/10.1109/euma.1993.336713.

Повний текст джерела
Стилі APA, Harvard, Vancouver, ISO та ін.
8

Seo, Sujin, Namsik Ryu, Heungjae Choi, and Yongchae Jeong. "Novel High-Q Inductor using Active Inductor Structure and Feedback Parallel Resonance Circuit." In 2007 IEEE Radio Frequency Integrated Circuits Symposium. IEEE, 2007. http://dx.doi.org/10.1109/rfic.2007.380925.

Повний текст джерела
Стилі APA, Harvard, Vancouver, ISO та ін.
9

SLIMANE, Abdelhalim, Sid Ahmed TEDJINI, and Fayrouz HADDAD. "Novel CMOS active inductor for tunable RF circuits." In 2018 IEEE 61st International Midwest Symposium on Circuits and Systems (MWSCAS). IEEE, 2018. http://dx.doi.org/10.1109/mwscas.2018.8624029.

Повний текст джерела
Стилі APA, Harvard, Vancouver, ISO та ін.
10

Yamaguchi, M., K. Suezawa, M. Baba, Y. Takahashi, K. I. Arai, S. Kikuchi, Y. Shimada, S. Tanabe, and K. Ito. "Magnetic Thin-Film Inductor for rf Integrated Circuits." In 1999 International Conference on Solid State Devices and Materials. The Japan Society of Applied Physics, 1999. http://dx.doi.org/10.7567/ssdm.1999.e-14-3.

Повний текст джерела
Стилі APA, Harvard, Vancouver, ISO та ін.

Звіти організацій з теми "INDUCTOR CIRCUITS"

1

Hull, J. P., and D. W. Scholfield. A Composite Capacitor/Inductor Assembly for Resonant Circuits. Fort Belvoir, VA: Defense Technical Information Center, June 2001. http://dx.doi.org/10.21236/ada406884.

Повний текст джерела
Стилі APA, Harvard, Vancouver, ISO та ін.
2

R.M.Wheat, Jr. The Induction of Chaos in Electronic Circuits Final Report-October 1, 2001. Office of Scientific and Technical Information (OSTI), April 2003. http://dx.doi.org/10.2172/812178.

Повний текст джерела
Стилі APA, Harvard, Vancouver, ISO та ін.
3

Ron, Eliora, and Eugene Eugene Nester. Global functional genomics of plant cell transformation by agrobacterium. United States Department of Agriculture, March 2009. http://dx.doi.org/10.32747/2009.7695860.bard.

Повний текст джерела
Анотація:
The aim of this study was to carry out a global functional genomics analysis of plant cell transformation by Agrobacterium in order to define and characterize the physiology of Agrobacterium in the acidic environment of a wounded plant. We planed to study the proteome and transcriptome of Agrobacterium in response to a change in pH, from 7.2 to 5.5 and identify genes and circuits directly involved in this change. Bacteria-plant interactions involve a large number of global regulatory systems, which are essential for protection against new stressful conditions. The interaction of bacteria with their hosts has been previously studied by genetic-physiological methods. We wanted to make use of the new capabilities to study these interactions on a global scale, using transcription analysis (transcriptomics, microarrays) and proteomics (2D gel electrophoresis and mass spectrometry). The results provided extensive data on the functional genomics under conditions that partially mimic plant infection and – in addition - revealed some surprising and significant data. Thus, we identified the genes whose expression is modulated when Agrobacterium is grown under the acidic conditions found in the rhizosphere (pH 5.5), an essential environmental factor in Agrobacterium – plant interactions essential for induction of the virulence program by plant signal molecules. Among the 45 genes whose expression was significantly elevated, of special interest is the two-component chromosomally encoded system, ChvG/I which is involved in regulating acid inducible genes. A second exciting system under acid and ChvG/Icontrol is a secretion system for proteins, T6SS, encoded by 14 genes which appears to be important for Rhizobium leguminosarum nodule formation and nitrogen fixation and for virulence of Agrobacterium. The proteome analysis revealed that gamma aminobutyric acid (GABA), a metabolite secreted by wounded plants, induces the synthesis of an Agrobacterium lactonase which degrades the quorum sensing signal, N-acyl homoserine lactone (AHL), resulting in attenuation of virulence. In addition, through a transcriptomic analysis of Agrobacterium growing at the pH of the rhizosphere (pH=5.5), we demonstrated that salicylic acid (SA) a well-studied plant signal molecule important in plant defense, attenuates Agrobacterium virulence in two distinct ways - by down regulating the synthesis of the virulence (vir) genes required for the processing and transfer of the T-DNA and by inducing the same lactonase, which in turn degrades the AHL. Thus, GABA and SA with different molecular structures, induce the expression of these same genes. The identification of genes whose expression is modulated by conditions that mimic plant infection, as well as the identification of regulatory molecules that help control the early stages of infection, advance our understanding of this complex bacterial-plant interaction and has immediate potential applications to modify it. We expect that the data generated by our research will be used to develop novel strategies for the control of crown gall disease. Moreover, these results will also provide the basis for future biotechnological approaches that will use genetic manipulations to improve bacterial-plant interactions, leading to more efficient DNA transfer to recalcitrant plants and robust symbiosis. These advances will, in turn, contribute to plant protection by introducing genes for resistance against other bacteria, pests and environmental stress.
Стилі APA, Harvard, Vancouver, ISO та ін.
Ми пропонуємо знижки на всі преміум-плани для авторів, чиї праці увійшли до тематичних добірок літератури. Зв'яжіться з нами, щоб отримати унікальний промокод!

До бібліографії