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Статті в журналах з теми "III-V compound semiconductor nanostructures"
John Chelliah, Cyril R. A., and Rajesh Swaminathan. "Current trends in changing the channel in MOSFETs by III–V semiconducting nanostructures." Nanotechnology Reviews 6, no. 6 (November 27, 2017): 613–23. http://dx.doi.org/10.1515/ntrev-2017-0155.
Повний текст джерелаDubrovskii V. G. "Limiting factors for the growth rate of epitaxial III-V compound semiconductors." Technical Physics Letters 49, no. 4 (2023): 77. http://dx.doi.org/10.21883/tpl.2023.04.55886.19512.
Повний текст джерелаXu, Bo, Z. G. Wang, Y. H. Chen, P. Jin, X. L. Ye, and Feng Qi Liu. "Controlled Growth of III-V Compound Semiconductor Nano-Structures and Their Application in Quantum-Devices." Materials Science Forum 475-479 (January 2005): 1783–86. http://dx.doi.org/10.4028/www.scientific.net/msf.475-479.1783.
Повний текст джерелаKim, Jong Su, Im Sik Han, Sang Jun Lee, and Jin Dong Song. "Droplet Epitaxy for III-V Compound Semiconductor Quantum Nanostructures on Lattice Matched Systems." Journal of the Korean Physical Society 73, no. 2 (July 2018): 190–202. http://dx.doi.org/10.3938/jkps.73.190.
Повний текст джерелаZhao, Zuoming, Kameshwar Yadavalli, Zhibiao Hao, and Kang L. Wang. "Direct integration of III–V compound semiconductor nanostructures on silicon by selective epitaxy." Nanotechnology 20, no. 3 (December 16, 2008): 035304. http://dx.doi.org/10.1088/0957-4484/20/3/035304.
Повний текст джерелаNoh, Joo-Hyong, Hajime Asahi, Seong-Jin Kim, Minori Takemoto, and Shun-ichi Gonda. "Scanning Tunneling Microscopy/Scanning Tunneling Spectroscopy Observation of III–V Compound Semiconductor Nanostructures." Japanese Journal of Applied Physics 35, Part 1, No. 6B (June 30, 1996): 3743–48. http://dx.doi.org/10.1143/jjap.35.3743.
Повний текст джерелаДубровский, В. Г. "Лимитирующие факторы скорости роста при эпитаксии полупроводниковых соединений III-V". Письма в журнал технической физики 49, № 8 (2023): 39. http://dx.doi.org/10.21883/pjtf.2023.08.55137.19512.
Повний текст джерелаKang, M., J. H. Wu, S. Huang, M. V. Warren, Y. Jiang, E. A. Robb, and R. S. Goldman. "Universal mechanism for ion-induced nanostructure formation on III-V compound semiconductor surfaces." Applied Physics Letters 101, no. 8 (August 20, 2012): 082101. http://dx.doi.org/10.1063/1.4742863.
Повний текст джерелаZanotti, Simone, Momchil Minkov, Shanhui Fan, Lucio C. Andreani, and Dario Gerace. "Doubly-Resonant Photonic Crystal Cavities for Efficient Second-Harmonic Generation in III–V Semiconductors." Nanomaterials 11, no. 3 (February 28, 2021): 605. http://dx.doi.org/10.3390/nano11030605.
Повний текст джерелаMi, Zetian. "III-V compound semiconductor nanostructures on silicon: epitaxial growth, properties, and applications in light emitting diodes and lasers." Journal of Nanophotonics 3, no. 1 (January 1, 2009): 031602. http://dx.doi.org/10.1117/1.3081051.
Повний текст джерелаДисертації з теми "III-V compound semiconductor nanostructures"
Grant, Victoria Anne. "Growth and characterisation of III-V semiconductor nanostructures." Thesis, University of Nottingham, 2008. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.490983.
Повний текст джерелаGomes, Rajiv. "Compound III-V semiconductor avalanche photodiodes for X-ray spectroscopy." Thesis, University of Sheffield, 2012. http://etheses.whiterose.ac.uk/2560/.
Повний текст джерелаTey, Chun Maw. "Advanced transmission electron microscopy studies of III-V semiconductor nanostructures." Thesis, University of Sheffield, 2006. http://etheses.whiterose.ac.uk/14901/.
Повний текст джерелаGryczynski, Karol Grzegorz. "Electrostatic Effects in III-V Semiconductor Based Metal-optical Nanostructures." Thesis, University of North Texas, 2012. https://digital.library.unt.edu/ark:/67531/metadc115090/.
Повний текст джерелаLu, Ryan P. "III-V compound semiconductor dopant profiling using scanning spreading resistance microscopy /." Diss., Connect to a 24 p. preview or request complete full text in PDF format. Access restricted to UC campuses, 2002. http://wwwlib.umi.com/cr/ucsd/fullcit?p3055790.
Повний текст джерелаMashigo, Donald. "Raman spectroscopy of ternary III-V semiconducting films." Thesis, Nelson Mandela Metropolitan University, 2009. http://hdl.handle.net/10948/1011.
Повний текст джерелаJia, Roger (Roger Qingfeng). "Properties of thin film III-V/IV semiconductor alloys and nanostructures." Thesis, Massachusetts Institute of Technology, 2017. http://hdl.handle.net/1721.1/113928.
Повний текст джерелаThis electronic version was submitted by the student author. The certified thesis is available in the Institute Archives and Special Collections.
Cataloged from student-submitted PDF version of thesis.
Includes bibliographical references (pages 116-121).
A large amount of research and development has been devoted to engineering materials for the next generation of semiconductor devices with high performance, energy efficiency, and economic viability. To this end, significant efforts have been made to grow semiconductor thin films with the desired properties onto lattice constants with viable, cost effective substrates. Comparatively less effort has been made to explore III-V/IV heterovalent nanostructures and alloys, which may exhibit properties not available in existing materials. The investigation of these structures, grown using MOCVD, is the goal of this thesis and is motivated by two factors: one, that III-V/IV nanostructures should be good thermoelectrics based on the "phonon glass electron crystal" concept, and two, that (GaAs)₁-x(Ge₂)x alloys were observed to exhibit near-infrared room temperature luminescence, a result that can have significant implications for low bandgap optical devices. A survey of various growth conditions was conducted for the growth of the model GaAs/Ge system using MOCVD to gain insight in the epitaxy involving heterovalent materials and to identify structures suitable for investigation for their thermoelectric and optical properties. A significant decrease in the thermal conductivities of GaAs/Ge nanostructures and alloys relative to bulk GaAs and bulk Ge was observed. This reduction can be attributed to the presence of the heterovalent interfaces. The electron mobilities of the structures were determined to be comparable to bulk Ge, indicating minimal disruption to electron transport by the interfaces. A further reduction in thermal conductivity was observed in an (In₀.₁Ga₀.₉As)₀.₈₄(Si0₀.₁Ge₀.₉)₀.₁₆ alloy; the alloy had a thermal conductivity of 4.3 W/m-K, comparable to some state-of-the-art thermoelectric materials. Room temperature photoluminescence measurements of various compositions of (GaAs)₁-x(Ge₂)x alloys revealed a maximum energy transition of 0.8 eV. This bandgap narrowing is the result of composition fluctuations; the fluctuations create regions of lower bandgap, resulting in a weak dependence on luminescence as a function of Ge composition as well as lower bandgap than the homogeneous alloy with the same composition. As silicon was added to the (GaAs)₁-x(Ge₂)x alloy, the bandgap increased despite the composition fluctuations. Based on the results from this work III-V/IV nanostructures show promise for thermoelectric and optical applications.
by Roger Jia.
Ph. D.
McAdoo, James Alexander. "Factors affecting carrier transport in ultrafast III-V compound semiconductor based photodiodes." W&M ScholarWorks, 2000. https://scholarworks.wm.edu/etd/1539623974.
Повний текст джерелаThota, Venkata Ramana Kumar. "Tunable Optical Phenomena and Carrier Recombination Dynamics in III-V Semiconductor Nanostructures." Ohio University / OhioLINK, 2016. http://rave.ohiolink.edu/etdc/view?acc_num=ohiou1451807323.
Повний текст джерелаLee, Kyeongkyun. "Modeling and optimization of molecular beam epitaxy for III-V compound semiconductor growth." Diss., Georgia Institute of Technology, 1999. http://hdl.handle.net/1853/14836.
Повний текст джерелаКниги з теми "III-V compound semiconductor nanostructures"
Yates, Martin John. Electron microscopy of compound III-V semiconductor layers. Birmingham: University ofBirmingham, 1987.
Знайти повний текст джерелаWilmsen, Carl W., ed. Physics and Chemistry of III-V Compound Semiconductor Interfaces. Boston, MA: Springer US, 1985. http://dx.doi.org/10.1007/978-1-4684-4835-1.
Повний текст джерелаW, Wilmsen Carl, ed. Physics and chemistry of III-V compound semiconductor interfaces. New York: Plenum Press, 1985.
Знайти повний текст джерелаDoping in III-V semiconductors. Cambridge [England]: Cambridge University Press, 1993.
Знайти повний текст джерелаLiquid-phase epitaxial growth of III-V compound semiconductor materials and their device applications. Bristol: A. Hilger, 1990.
Знайти повний текст джерелаV, Swaminathan, Pearton S. J, Manasreh Mahmoud Omar, and Materials Research Society, eds. Degradation mechanisms in III-V compound semiconductor devices and structures: Symposium held April 17-18, 1990, San Francisco, California, U.S.A. Pittsburgh, Pa: Materials Research Society, 1990.
Знайти повний текст джерелаWilmsen, Carl. Physics and Chemistry of III-V Compound Semiconductor Interfaces. Springer London, Limited, 2013.
Знайти повний текст джерелаWilmsen, Carl W. Physics and Chemistry of III-V Compound Semiconductor Interfaces. Springer, 2012.
Знайти повний текст джерелаIII-V Compound Semiconductors and Semiconductor Properties of Superionic Materials. Elsevier, 1988. http://dx.doi.org/10.1016/s0080-8784(08)x6008-9.
Повний текст джерелаChang, Kow-Ming. Thermodynamics of groups III-V and II-VI compound semiconductors. 1985.
Знайти повний текст джерелаЧастини книг з теми "III-V compound semiconductor nanostructures"
Pohl, Udo W., Sven Rodt, and Axel Hoffmann. "Optical Properties of III–V Quantum Dots." In Semiconductor Nanostructures, 269–99. Berlin, Heidelberg: Springer Berlin Heidelberg, 2008. http://dx.doi.org/10.1007/978-3-540-77899-8_14.
Повний текст джерелаCheng, Keh Yung. "Compound Semiconductor Crystals." In III–V Compound Semiconductors and Devices, 105–59. Cham: Springer International Publishing, 2020. http://dx.doi.org/10.1007/978-3-030-51903-2_4.
Повний текст джерелаLiu, Zhaojun, Tongde Huang, Qiang Li, Xing Lu, and Xinbo Zou. "III-V Materials and Devices." In Compound Semiconductor Materials and Devices, 31–44. Cham: Springer International Publishing, 2016. http://dx.doi.org/10.1007/978-3-031-02028-5_3.
Повний текст джерелаIga, Kenichi, and Susumu Kinoshita. "Epitaxy of III–V Compound Semiconductors." In Process Technology for Semiconductor Lasers, 43–50. Berlin, Heidelberg: Springer Berlin Heidelberg, 1996. http://dx.doi.org/10.1007/978-3-642-79576-3_4.
Повний текст джерелаWilmsen, C. W. "Oxide/III-V Compound Semiconductor Interfaces." In Physics and Chemistry of III-V Compound Semiconductor Interfaces, 403–62. Boston, MA: Springer US, 1985. http://dx.doi.org/10.1007/978-1-4684-4835-1_7.
Повний текст джерелаWilliams, R. H. "III-V Semiconductor Surface Interactions." In Physics and Chemistry of III-V Compound Semiconductor Interfaces, 1–72. Boston, MA: Springer US, 1985. http://dx.doi.org/10.1007/978-1-4684-4835-1_1.
Повний текст джерелаKiriakidis, G., W. T. Anderson, Z. Hatzopoulos, C. Michelakis, and D. V. Morgan. "Metal Contact Degradation on III–V Compound Semiconductors." In Semiconductor Device Reliability, 269–89. Dordrecht: Springer Netherlands, 1990. http://dx.doi.org/10.1007/978-94-009-2482-6_14.
Повний текст джерелаCheng, Keh Yung. "Electrical Properties of Compound Semiconductor Heterostructures." In III–V Compound Semiconductors and Devices, 243–87. Cham: Springer International Publishing, 2020. http://dx.doi.org/10.1007/978-3-030-51903-2_7.
Повний текст джерелаCheng, Keh Yung. "Optical Properties of Compound Semiconductor Heterostructures." In III–V Compound Semiconductors and Devices, 289–337. Cham: Springer International Publishing, 2020. http://dx.doi.org/10.1007/978-3-030-51903-2_8.
Повний текст джерелаMönch, Winfried. "Oxidation of Silicon and III–V Compound Semiconductors." In Semiconductor Surfaces and Interfaces, 353–76. Berlin, Heidelberg: Springer Berlin Heidelberg, 2001. http://dx.doi.org/10.1007/978-3-662-04459-9_17.
Повний текст джерелаТези доповідей конференцій з теми "III-V compound semiconductor nanostructures"
Fukui, Takashi, Eiji Nakai, MuYi Chen, and Katsuhiro Tomioka. "III-V Compound Semiconductor Nanowire Solar Cells." In Optical Nanostructures and Advanced Materials for Photovoltaics. Washington, D.C.: OSA, 2014. http://dx.doi.org/10.1364/pv.2014.pw3c.2.
Повний текст джерелаWang, Haiyuan, Collins Ouserigha, Christopher W. Burrows, and Gavin R. Bell. "Nanostructures and surface reconstructions in Mn / III–V systems and MnSb." In 2016 Compound Semiconductor Week (CSW) [Includes 28th International Conference on Indium Phosphide & Related Materials (IPRM) & 43rd International Symposium on Compound Semiconductors (ISCS)]. IEEE, 2016. http://dx.doi.org/10.1109/iciprm.2016.7528792.
Повний текст джерелаOkada, Yoshitaka. "Current trends in high-efficiency III–V nanostructured solar cells." In 2016 Compound Semiconductor Week (CSW) [Includes 28th International Conference on Indium Phosphide & Related Materials (IPRM) & 43rd International Symposium on Compound Semiconductors (ISCS)]. IEEE, 2016. http://dx.doi.org/10.1109/iciprm.2016.7528774.
Повний текст джерелаHEUKEN, M. "NANOSTRUCTURE GROWTH OF III-V COMPOUND SEMICONDUCTOR IN ADVANCED PLANETARY REACTORS®." In Reviews and Short Notes to Nanomeeting '99. WORLD SCIENTIFIC, 1999. http://dx.doi.org/10.1142/9789812817990_0058.
Повний текст джерелаKobayashi, Nobuhiko P. "A new route to grow single-crystal group III-V compound semiconductor nanostructures on non-single-crystal substrates." In Optics East 2007, edited by Nibir K. Dhar, Achyut K. Dutta, and M. Saif Islam. SPIE, 2007. http://dx.doi.org/10.1117/12.747485.
Повний текст джерелаPynn, Christopher D., Federico L. Gonzalez, Lesley Chan, Alexander Berry, Sang Ho Oh, Tal Margalith, Daniel E. Morse, Shuji Nakamura, Michael J. Gordon, and Steven P. DenBaars. "Enhancing light extraction from III-nitride devices using moth-eye nanostructures formed by colloidal lithography." In 2016 Compound Semiconductor Week (CSW) [Includes 28th International Conference on Indium Phosphide & Related Materials (IPRM) & 43rd International Symposium on Compound Semiconductors (ISCS)]. IEEE, 2016. http://dx.doi.org/10.1109/iciprm.2016.7528824.
Повний текст джерелаFu, L., H. F. Lu, J. Lee, Z. Li, S. Turner, P. Parkinson, S. Breuer, et al. "Nanostructure photovoltaics based on III-V compound semiconductors." In Advanced Optoelectronics for Energy and Environment. Washington, D.C.: OSA, 2013. http://dx.doi.org/10.1364/aoee.2013.asa4a.2.
Повний текст джерелаJoyce, H. J., S. Paiman, Q. Gao, H. H. Tan, Y. Kim, L. M. Smith, H. E. Jackson, et al. "III-V compound semiconductor nanowires." In 2009 IEEE Nanotechnology Materials and Devices Conference (NMDC). IEEE, 2009. http://dx.doi.org/10.1109/nmdc.2009.5167572.
Повний текст джерелаKobayashi, Nobuhiko P. "Low dimensional III-V compound semiconductor structures." In SPIE NanoScience + Engineering, edited by M. Saif Islam, A. Alec Talin, and Stephen D. Hersee. SPIE, 2009. http://dx.doi.org/10.1117/12.829095.
Повний текст джерелаFukui, Takashi, Masatoshi Yoshimura, Eiji Nakai, and Katsuhiro Tomioka. "III-V Compound Semiconductor Nanowire Solar Cells." In CLEO: Science and Innovations. Washington, D.C.: OSA, 2013. http://dx.doi.org/10.1364/cleo_si.2013.cth1m.3.
Повний текст джерелаЗвіти організацій з теми "III-V compound semiconductor nanostructures"
Hall, Douglas C., Patrick J. Fay, Thomas H. Kosel, Bruce A. Bunker, and Russell D. Dupuis. Electronic Properties and Device Applications of III-V Compound Semiconductor Native Oxides. Fort Belvoir, VA: Defense Technical Information Center, March 2006. http://dx.doi.org/10.21236/ada449186.
Повний текст джерелаHall, Douglas C., Gregory L. Snider, and Bruce A. Bunker. III-V Compound Semiconductor Native Oxide Mosfets With Focus on Interface Studies. Fort Belvoir, VA: Defense Technical Information Center, July 2001. http://dx.doi.org/10.21236/ada388295.
Повний текст джерела