Готові списки джерел за темами / III-V compound semiconductor nanostructures

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Автор: Grafiati
Опубліковано: 6 вересня 2023

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Статті в журналах з теми "III-V compound semiconductor nanostructures"

1

John Chelliah, Cyril R. A., and Rajesh Swaminathan. "Current trends in changing the channel in MOSFETs by III–V semiconducting nanostructures." Nanotechnology Reviews 6, no. 6 (November 27, 2017): 613–23. http://dx.doi.org/10.1515/ntrev-2017-0155.

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AbstractThe quest for high device density in advanced technology nodes makes strain engineering increasingly difficult in the last few decades. The mechanical strain and performance gain has also started to diminish due to aggressive transistor pitch scaling. In order to continue Moore’s law of scaling, it is necessary to find an effective way to enhance carrier transport in scaled dimensions. In this regard, the use of alternative nanomaterials that have superior transport properties for metal-oxide-semiconductor field-effect transistor (MOSFET) channel would be advantageous. Because of the extraordinary electron transport properties of certain III–V compound semiconductors, III–Vs are considered a promising candidate as a channel material for future channel metal-oxide-semiconductor transistors and complementary metal-oxide-semiconductor devices. In this review, the importance of the III–V semiconductor nanostructured channel in MOSFET is highlighted with a proposed III–V GaN nanostructured channel (thickness of 10 nm); Al2O3 dielectric gate oxide based MOSFET is reported with a very low threshold voltage of 0.1 V and faster switching of the device.
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2

Dubrovskii V. G. "Limiting factors for the growth rate of epitaxial III-V compound semiconductors." Technical Physics Letters 49, no. 4 (2023): 77. http://dx.doi.org/10.21883/tpl.2023.04.55886.19512.

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Limiting factors for the growth rate of epitaxial III-V compound semiconductors are investigated. A model based on the two connected diffusion equations for the group III and V adatoms applies for planar layers and different nanostructures including III-V nanowires. An expression for the step growth rate is obtained and a physical parameter is revealed which determines an element which actually limits the growth process. Keywords: III-V compound semiconductors, surface diffusion of adatoms, desorption, step growth rate.
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3

Xu, Bo, Z. G. Wang, Y. H. Chen, P. Jin, X. L. Ye, and Feng Qi Liu. "Controlled Growth of III-V Compound Semiconductor Nano-Structures and Their Application in Quantum-Devices." Materials Science Forum 475-479 (January 2005): 1783–86. http://dx.doi.org/10.4028/www.scientific.net/msf.475-479.1783.

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This paper reviews our work on controlled growth of self-assembled semiconductor nanostructures, and their application in light-emission devices. High-power, long-life quantum dots (QD) lasers emitting at ~1 µm, red-emitting QD lasers, and long-wavelength QD lasers on GaAs substrates have successfully been achieved by optimizing the growth conditions of QDs.
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4

Kim, Jong Su, Im Sik Han, Sang Jun Lee, and Jin Dong Song. "Droplet Epitaxy for III-V Compound Semiconductor Quantum Nanostructures on Lattice Matched Systems." Journal of the Korean Physical Society 73, no. 2 (July 2018): 190–202. http://dx.doi.org/10.3938/jkps.73.190.

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5

Zhao, Zuoming, Kameshwar Yadavalli, Zhibiao Hao, and Kang L. Wang. "Direct integration of III–V compound semiconductor nanostructures on silicon by selective epitaxy." Nanotechnology 20, no. 3 (December 16, 2008): 035304. http://dx.doi.org/10.1088/0957-4484/20/3/035304.

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6

Noh, Joo-Hyong, Hajime Asahi, Seong-Jin Kim, Minori Takemoto, and Shun-ichi Gonda. "Scanning Tunneling Microscopy/Scanning Tunneling Spectroscopy Observation of III–V Compound Semiconductor Nanostructures." Japanese Journal of Applied Physics 35, Part 1, No. 6B (June 30, 1996): 3743–48. http://dx.doi.org/10.1143/jjap.35.3743.

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7

Дубровский, В. Г. "Лимитирующие факторы скорости роста при эпитаксии полупроводниковых соединений III-V". Письма в журнал технической физики 49, № 8 (2023): 39. http://dx.doi.org/10.21883/pjtf.2023.08.55137.19512.

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Limiting factors for the growth rate of epitaxial III-V compound semiconductors are investigated. A model based on the two connected diffusion equations for the group III and V adatoms applies for planar layers and different nanostructures including III-V nanowires. An expression for the step growth rate is obtained and a physical parameter is revealed which determines an element which actually limits the growth process.
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8

Kang, M., J. H. Wu, S. Huang, M. V. Warren, Y. Jiang, E. A. Robb, and R. S. Goldman. "Universal mechanism for ion-induced nanostructure formation on III-V compound semiconductor surfaces." Applied Physics Letters 101, no. 8 (August 20, 2012): 082101. http://dx.doi.org/10.1063/1.4742863.

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9

Zanotti, Simone, Momchil Minkov, Shanhui Fan, Lucio C. Andreani, and Dario Gerace. "Doubly-Resonant Photonic Crystal Cavities for Efficient Second-Harmonic Generation in III–V Semiconductors." Nanomaterials 11, no. 3 (February 28, 2021): 605. http://dx.doi.org/10.3390/nano11030605.

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Second-order nonlinear effects, such as second-harmonic generation, can be strongly enhanced in nanofabricated photonic materials when both fundamental and harmonic frequencies are spatially and temporally confined. Practically designing low-volume and doubly-resonant nanoresonators in conventional semiconductor compounds is challenging owing to their intrinsic refractive index dispersion. In this work we review a recently developed strategy to design doubly-resonant nanocavities with low mode volume and large quality factor via localized defects in a photonic crystal structure. We built on this approach by applying an evolutionary optimization algorithm in connection with Maxwell equations solvers; the proposed design recipe can be applied to any material platform. We explicitly calculated the second-harmonic generation efficiency for doubly-resonant photonic crystal cavity designs in typical III–V semiconductor materials, such as GaN and AlGaAs, while targeting a fundamental harmonic at telecom wavelengths and fully accounting for the tensor nature of the respective nonlinear susceptibilities. These results may stimulate the realization of small footprint photonic nanostructures in leading semiconductor material platforms to achieve unprecedented nonlinear efficiencies.
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10

Mi, Zetian. "III-V compound semiconductor nanostructures on silicon: epitaxial growth, properties, and applications in light emitting diodes and lasers." Journal of Nanophotonics 3, no. 1 (January 1, 2009): 031602. http://dx.doi.org/10.1117/1.3081051.

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Дисертації з теми "III-V compound semiconductor nanostructures"

1

Grant, Victoria Anne. "Growth and characterisation of III-V semiconductor nanostructures." Thesis, University of Nottingham, 2008. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.490983.

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This thesis describes the growth and characterisation of III-V semiconductor materials and nanostructures. The material was grown by molecular beam epitaxy (MBE) and characterised using a range of techniques including atomic force microscopy (AFM), cross-sectional scanning tunnelling microscopy (XSTM) and x-ray diffraction (XRD).
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2

Gomes, Rajiv. "Compound III-V semiconductor avalanche photodiodes for X-ray spectroscopy." Thesis, University of Sheffield, 2012. http://etheses.whiterose.ac.uk/2560/.

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3

Tey, Chun Maw. "Advanced transmission electron microscopy studies of III-V semiconductor nanostructures." Thesis, University of Sheffield, 2006. http://etheses.whiterose.ac.uk/14901/.

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III -V semiconducting materials allow many novel optoelectronic devices, such as light emitting diodes and lasers, to be developed. Furthermore, recent development in crystal growth techniques allows the growth of low-dimensional semiconductor heterostructures. To achieve the best performance, the crystallinity and the growth mechanism of the devices have to be analysed. In this work, a JEOL JEM-2010F field emission gun transmission electron microscope (TEM) is employed to analyse the nanoscale semiconductor structures. Various techniques, such as conventional TEM, scanning TEM, high resolution TEM and energy-filtered TEM were employed to characterize the structural properties of III-V semiconducting materials. In this thesis, advanced TEM analysis on InAs/GaAs quantum dots with InAIAs capping layer, GaInNAs/GaAs quantum wells and annealed low temperature-grown GaAs are presented. The former investigates the impact of varying the thicknesses of InAIAs in the combined two-level InAIAs-InGaAs capping layer on InAs/GaAs quantum dots. Based on the energy-filtered TEM images, the concentration of Al near the apex of the dots is significantly reduced. An increase in the height of the quantum dots has been observed when the thickness of InAIAs capping layer is increased. This is attributed to the suppression of indium atom detachment rate from the InAs dots during the capping process. Effects of growth temperature on the structural properties of 1.6 um GaInNAs/GaAs mUltiple quantum wells were also investigated. TEM studies show that compositional modulations and dislocations occurred in the sample grown at 400°C and possible point defect formation in the sample grown at 350 °C. The photoluminescence intensities for samples grown at 350 and 400°C are degraded dramatically, compared with the sample grown at 375 °C. The effects of low temperature-growth GaAs annealed at different temperatures were systematically investigated by TEM. Along with other collaborative measurements, the arsenic precipitate parameters obtained from TEM images were employed to develop a semi-quantitative model based on Ostwald ripening to explain the precipitate formation. Furthermore, the "two-trap" model successfully explains the anomalous features in the carrier lifetime and resistivity trends in annealed low temperature-grown GaAs.
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Gryczynski, Karol Grzegorz. "Electrostatic Effects in III-V Semiconductor Based Metal-optical Nanostructures." Thesis, University of North Texas, 2012. https://digital.library.unt.edu/ark:/67531/metadc115090/.

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The modification of the band edge or emission energy of semiconductor quantum well light emitters due to image charge induced phenomenon is an emerging field of study. This effect observed in quantum well light emitters is critical for all metal-optics based light emitters including plasmonics, or nanometallic electrode based light emitters. This dissertation presents, for the first time, a systematic study of the image charge effect on semiconductor–metal systems. the necessity of introducing the image charge interactions is demonstrated by experiments and mathematical methods for semiconductor-metal image charge interactions are introduced and developed.
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5

Lu, Ryan P. "III-V compound semiconductor dopant profiling using scanning spreading resistance microscopy /." Diss., Connect to a 24 p. preview or request complete full text in PDF format. Access restricted to UC campuses, 2002. http://wwwlib.umi.com/cr/ucsd/fullcit?p3055790.

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6

Mashigo, Donald. "Raman spectroscopy of ternary III-V semiconducting films." Thesis, Nelson Mandela Metropolitan University, 2009. http://hdl.handle.net/10948/1011.

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The III-V semiconductor compounds (i.e. In Ga As x 1-x , 1 x x InAs Sb - , In Ga Sb x 1-x and Al Ga As x 1-x ) have been studied using room temperature Raman spectroscopy. X-ray diffraction has been used as a complementary characterization technique. In this study all the III-V semiconductor compounds were grown by metal organic chemical vapour deposition (MOCVD) on GaAs and GaSb substrates. The layers were studied with respect to composition, strain variation and critical thickness. Raman spectroscopy has been employed to assess the composition dependence of optical phonons in the layers. The alloy composition was varied, while the thickness was kept constant in order to investigate compositional effects. A significant frequency shift of the phonon modes were observed as the composition changed. The composition dependence of the phonon frequencies were described by linear and polynomial expressions. The results of this study were compared with previous Raman and infrared work on III-V semiconductor compounds. Strain relaxation in InGaAs and InGaSb has been investigated by Raman and X-ray diffraction. Measurements were performed on several series of layers. For each series, the thickness was varied, while keeping the composition constant. For a given composition, the layer thicknesses were such that some layers should be fully strained, some partially relaxed and some fully relaxed. The Raman peak shifts and XRD confirm that a layer grows up to the critical thickness and then releases the strain as the thickness increases. Critical layer thickness values measured in this study were compared with published data, in which various techniques had been used to estimate the critical thickness.
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7

Jia, Roger (Roger Qingfeng). "Properties of thin film III-V/IV semiconductor alloys and nanostructures." Thesis, Massachusetts Institute of Technology, 2017. http://hdl.handle.net/1721.1/113928.

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Thesis: Ph. D., Massachusetts Institute of Technology, Department of Materials Science and Engineering, 2017.
This electronic version was submitted by the student author. The certified thesis is available in the Institute Archives and Special Collections.
Cataloged from student-submitted PDF version of thesis.
Includes bibliographical references (pages 116-121).
A large amount of research and development has been devoted to engineering materials for the next generation of semiconductor devices with high performance, energy efficiency, and economic viability. To this end, significant efforts have been made to grow semiconductor thin films with the desired properties onto lattice constants with viable, cost effective substrates. Comparatively less effort has been made to explore III-V/IV heterovalent nanostructures and alloys, which may exhibit properties not available in existing materials. The investigation of these structures, grown using MOCVD, is the goal of this thesis and is motivated by two factors: one, that III-V/IV nanostructures should be good thermoelectrics based on the "phonon glass electron crystal" concept, and two, that (GaAs)₁-x(Ge₂)x alloys were observed to exhibit near-infrared room temperature luminescence, a result that can have significant implications for low bandgap optical devices. A survey of various growth conditions was conducted for the growth of the model GaAs/Ge system using MOCVD to gain insight in the epitaxy involving heterovalent materials and to identify structures suitable for investigation for their thermoelectric and optical properties. A significant decrease in the thermal conductivities of GaAs/Ge nanostructures and alloys relative to bulk GaAs and bulk Ge was observed. This reduction can be attributed to the presence of the heterovalent interfaces. The electron mobilities of the structures were determined to be comparable to bulk Ge, indicating minimal disruption to electron transport by the interfaces. A further reduction in thermal conductivity was observed in an (In₀.₁Ga₀.₉As)₀.₈₄(Si0₀.₁Ge₀.₉)₀.₁₆ alloy; the alloy had a thermal conductivity of 4.3 W/m-K, comparable to some state-of-the-art thermoelectric materials. Room temperature photoluminescence measurements of various compositions of (GaAs)₁-x(Ge₂)x alloys revealed a maximum energy transition of 0.8 eV. This bandgap narrowing is the result of composition fluctuations; the fluctuations create regions of lower bandgap, resulting in a weak dependence on luminescence as a function of Ge composition as well as lower bandgap than the homogeneous alloy with the same composition. As silicon was added to the (GaAs)₁-x(Ge₂)x alloy, the bandgap increased despite the composition fluctuations. Based on the results from this work III-V/IV nanostructures show promise for thermoelectric and optical applications.
by Roger Jia.
Ph. D.
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8

McAdoo, James Alexander. "Factors affecting carrier transport in ultrafast III-V compound semiconductor based photodiodes." W&M ScholarWorks, 2000. https://scholarworks.wm.edu/etd/1539623974.

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This dissertation describes a comparative study conducted on GaAs MSM photodetectors to assess the importance of surface effects on the optical and frequency response characteristics of MSM photodetectors. MSM photodetectors on III-V compound semiconductors are technologically important because of their applications to fiber optic communication systems. While surface effects have been previously ignored, they must be considered in assessing the ultimate performance limits of such devices, especially if nanoscale MSM photodetectors are to be used. A controlled study was carried out in which high quality devices were subjected to surface damage over a known range and the resultant effects of optical and high frequency performance were observed and correlated with the damage.
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9

Thota, Venkata Ramana Kumar. "Tunable Optical Phenomena and Carrier Recombination Dynamics in III-V Semiconductor Nanostructures." Ohio University / OhioLINK, 2016. http://rave.ohiolink.edu/etdc/view?acc_num=ohiou1451807323.

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10

Lee, Kyeongkyun. "Modeling and optimization of molecular beam epitaxy for III-V compound semiconductor growth." Diss., Georgia Institute of Technology, 1999. http://hdl.handle.net/1853/14836.

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Книги з теми "III-V compound semiconductor nanostructures"

1

Yates, Martin John. Electron microscopy of compound III-V semiconductor layers. Birmingham: University ofBirmingham, 1987.

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2

Wilmsen, Carl W., ed. Physics and Chemistry of III-V Compound Semiconductor Interfaces. Boston, MA: Springer US, 1985. http://dx.doi.org/10.1007/978-1-4684-4835-1.

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3

W, Wilmsen Carl, ed. Physics and chemistry of III-V compound semiconductor interfaces. New York: Plenum Press, 1985.

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4

Doping in III-V semiconductors. Cambridge [England]: Cambridge University Press, 1993.

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5

Liquid-phase epitaxial growth of III-V compound semiconductor materials and their device applications. Bristol: A. Hilger, 1990.

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6

V, Swaminathan, Pearton S. J, Manasreh Mahmoud Omar, and Materials Research Society, eds. Degradation mechanisms in III-V compound semiconductor devices and structures: Symposium held April 17-18, 1990, San Francisco, California, U.S.A. Pittsburgh, Pa: Materials Research Society, 1990.

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7

Wilmsen, Carl. Physics and Chemistry of III-V Compound Semiconductor Interfaces. Springer London, Limited, 2013.

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8

Wilmsen, Carl W. Physics and Chemistry of III-V Compound Semiconductor Interfaces. Springer, 2012.

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9

III-V Compound Semiconductors and Semiconductor Properties of Superionic Materials. Elsevier, 1988. http://dx.doi.org/10.1016/s0080-8784(08)x6008-9.

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10

Chang, Kow-Ming. Thermodynamics of groups III-V and II-VI compound semiconductors. 1985.

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Частини книг з теми "III-V compound semiconductor nanostructures"

1

Pohl, Udo W., Sven Rodt, and Axel Hoffmann. "Optical Properties of III–V Quantum Dots." In Semiconductor Nanostructures, 269–99. Berlin, Heidelberg: Springer Berlin Heidelberg, 2008. http://dx.doi.org/10.1007/978-3-540-77899-8_14.

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2

Cheng, Keh Yung. "Compound Semiconductor Crystals." In III–V Compound Semiconductors and Devices, 105–59. Cham: Springer International Publishing, 2020. http://dx.doi.org/10.1007/978-3-030-51903-2_4.

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3

Liu, Zhaojun, Tongde Huang, Qiang Li, Xing Lu, and Xinbo Zou. "III-V Materials and Devices." In Compound Semiconductor Materials and Devices, 31–44. Cham: Springer International Publishing, 2016. http://dx.doi.org/10.1007/978-3-031-02028-5_3.

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4

Iga, Kenichi, and Susumu Kinoshita. "Epitaxy of III–V Compound Semiconductors." In Process Technology for Semiconductor Lasers, 43–50. Berlin, Heidelberg: Springer Berlin Heidelberg, 1996. http://dx.doi.org/10.1007/978-3-642-79576-3_4.

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5

Wilmsen, C. W. "Oxide/III-V Compound Semiconductor Interfaces." In Physics and Chemistry of III-V Compound Semiconductor Interfaces, 403–62. Boston, MA: Springer US, 1985. http://dx.doi.org/10.1007/978-1-4684-4835-1_7.

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6

Williams, R. H. "III-V Semiconductor Surface Interactions." In Physics and Chemistry of III-V Compound Semiconductor Interfaces, 1–72. Boston, MA: Springer US, 1985. http://dx.doi.org/10.1007/978-1-4684-4835-1_1.

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7

Kiriakidis, G., W. T. Anderson, Z. Hatzopoulos, C. Michelakis, and D. V. Morgan. "Metal Contact Degradation on III–V Compound Semiconductors." In Semiconductor Device Reliability, 269–89. Dordrecht: Springer Netherlands, 1990. http://dx.doi.org/10.1007/978-94-009-2482-6_14.

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8

Cheng, Keh Yung. "Electrical Properties of Compound Semiconductor Heterostructures." In III–V Compound Semiconductors and Devices, 243–87. Cham: Springer International Publishing, 2020. http://dx.doi.org/10.1007/978-3-030-51903-2_7.

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9

Cheng, Keh Yung. "Optical Properties of Compound Semiconductor Heterostructures." In III–V Compound Semiconductors and Devices, 289–337. Cham: Springer International Publishing, 2020. http://dx.doi.org/10.1007/978-3-030-51903-2_8.

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10

Mönch, Winfried. "Oxidation of Silicon and III–V Compound Semiconductors." In Semiconductor Surfaces and Interfaces, 353–76. Berlin, Heidelberg: Springer Berlin Heidelberg, 2001. http://dx.doi.org/10.1007/978-3-662-04459-9_17.

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Тези доповідей конференцій з теми "III-V compound semiconductor nanostructures"

1

Fukui, Takashi, Eiji Nakai, MuYi Chen, and Katsuhiro Tomioka. "III-V Compound Semiconductor Nanowire Solar Cells." In Optical Nanostructures and Advanced Materials for Photovoltaics. Washington, D.C.: OSA, 2014. http://dx.doi.org/10.1364/pv.2014.pw3c.2.

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2

Wang, Haiyuan, Collins Ouserigha, Christopher W. Burrows, and Gavin R. Bell. "Nanostructures and surface reconstructions in Mn / III–V systems and MnSb." In 2016 Compound Semiconductor Week (CSW) [Includes 28th International Conference on Indium Phosphide & Related Materials (IPRM) & 43rd International Symposium on Compound Semiconductors (ISCS)]. IEEE, 2016. http://dx.doi.org/10.1109/iciprm.2016.7528792.

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3

Okada, Yoshitaka. "Current trends in high-efficiency III–V nanostructured solar cells." In 2016 Compound Semiconductor Week (CSW) [Includes 28th International Conference on Indium Phosphide & Related Materials (IPRM) & 43rd International Symposium on Compound Semiconductors (ISCS)]. IEEE, 2016. http://dx.doi.org/10.1109/iciprm.2016.7528774.

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4

HEUKEN, M. "NANOSTRUCTURE GROWTH OF III-V COMPOUND SEMICONDUCTOR IN ADVANCED PLANETARY REACTORS®." In Reviews and Short Notes to Nanomeeting '99. WORLD SCIENTIFIC, 1999. http://dx.doi.org/10.1142/9789812817990_0058.

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5

Kobayashi, Nobuhiko P. "A new route to grow single-crystal group III-V compound semiconductor nanostructures on non-single-crystal substrates." In Optics East 2007, edited by Nibir K. Dhar, Achyut K. Dutta, and M. Saif Islam. SPIE, 2007. http://dx.doi.org/10.1117/12.747485.

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6

Pynn, Christopher D., Federico L. Gonzalez, Lesley Chan, Alexander Berry, Sang Ho Oh, Tal Margalith, Daniel E. Morse, Shuji Nakamura, Michael J. Gordon, and Steven P. DenBaars. "Enhancing light extraction from III-nitride devices using moth-eye nanostructures formed by colloidal lithography." In 2016 Compound Semiconductor Week (CSW) [Includes 28th International Conference on Indium Phosphide & Related Materials (IPRM) & 43rd International Symposium on Compound Semiconductors (ISCS)]. IEEE, 2016. http://dx.doi.org/10.1109/iciprm.2016.7528824.

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Fu, L., H. F. Lu, J. Lee, Z. Li, S. Turner, P. Parkinson, S. Breuer, et al. "Nanostructure photovoltaics based on III-V compound semiconductors." In Advanced Optoelectronics for Energy and Environment. Washington, D.C.: OSA, 2013. http://dx.doi.org/10.1364/aoee.2013.asa4a.2.

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Joyce, H. J., S. Paiman, Q. Gao, H. H. Tan, Y. Kim, L. M. Smith, H. E. Jackson, et al. "III-V compound semiconductor nanowires." In 2009 IEEE Nanotechnology Materials and Devices Conference (NMDC). IEEE, 2009. http://dx.doi.org/10.1109/nmdc.2009.5167572.

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Kobayashi, Nobuhiko P. "Low dimensional III-V compound semiconductor structures." In SPIE NanoScience + Engineering, edited by M. Saif Islam, A. Alec Talin, and Stephen D. Hersee. SPIE, 2009. http://dx.doi.org/10.1117/12.829095.

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Fukui, Takashi, Masatoshi Yoshimura, Eiji Nakai, and Katsuhiro Tomioka. "III-V Compound Semiconductor Nanowire Solar Cells." In CLEO: Science and Innovations. Washington, D.C.: OSA, 2013. http://dx.doi.org/10.1364/cleo_si.2013.cth1m.3.

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Звіти організацій з теми "III-V compound semiconductor nanostructures"

1

Hall, Douglas C., Patrick J. Fay, Thomas H. Kosel, Bruce A. Bunker, and Russell D. Dupuis. Electronic Properties and Device Applications of III-V Compound Semiconductor Native Oxides. Fort Belvoir, VA: Defense Technical Information Center, March 2006. http://dx.doi.org/10.21236/ada449186.

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2

Hall, Douglas C., Gregory L. Snider, and Bruce A. Bunker. III-V Compound Semiconductor Native Oxide Mosfets With Focus on Interface Studies. Fort Belvoir, VA: Defense Technical Information Center, July 2001. http://dx.doi.org/10.21236/ada388295.

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