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Статті в журналах з теми "III-Nitride Materials"
Pampili, Pietro, and Peter J. Parbrook. "Doping of III-nitride materials." Materials Science in Semiconductor Processing 62 (May 2017): 180–91. http://dx.doi.org/10.1016/j.mssp.2016.11.006.
Повний текст джерелаWu, Kefeng, Siyu Huang, Wenliang Wang, and Guoqiang Li. "Recent progress in III-nitride nanosheets: properties, materials and applications." Semiconductor Science and Technology 36, no. 12 (October 27, 2021): 123002. http://dx.doi.org/10.1088/1361-6641/ac2c26.
Повний текст джерелаHardy, Matthew T., Daniel F. Feezell, Steven P. DenBaars, and Shuji Nakamura. "Group III-nitride lasers: a materials perspective." Materials Today 14, no. 9 (September 2011): 408–15. http://dx.doi.org/10.1016/s1369-7021(11)70185-7.
Повний текст джерелаHite, Jennifer. "Progress in periodically oriented III-nitride materials." Journal of Crystal Growth 456 (December 2016): 133–36. http://dx.doi.org/10.1016/j.jcrysgro.2016.08.042.
Повний текст джерелаMonemar, B., P. P. Paskov, J. P. Bergman, A. A. Toropov, and T. V. Shubina. "Recent developments in the III-nitride materials." physica status solidi (b) 244, no. 6 (June 2007): 1759–68. http://dx.doi.org/10.1002/pssb.200674836.
Повний текст джерелаHangleiter, Andreas. "III–V Nitrides: A New Age for Optoelectronics." MRS Bulletin 28, no. 5 (May 2003): 350–53. http://dx.doi.org/10.1557/mrs2003.99.
Повний текст джерелаMoram, M. A., and S. Zhang. "ScGaN and ScAlN: emerging nitride materials." J. Mater. Chem. A 2, no. 17 (2014): 6042–50. http://dx.doi.org/10.1039/c3ta14189f.
Повний текст джерелаBen, Jianwei, Xinke Liu, Cong Wang, Yupeng Zhang, Zhiming Shi, Yuping Jia, Shanli Zhang, et al. "2D III‐Nitride Materials: Properties, Growth, and Applications." Advanced Materials 33, no. 27 (May 28, 2021): 2006761. http://dx.doi.org/10.1002/adma.202006761.
Повний текст джерелаSpeck, J. S., and S. F. Chichibu. "Nonpolar and Semipolar Group III Nitride-Based Materials." MRS Bulletin 34, no. 5 (May 2009): 304–12. http://dx.doi.org/10.1557/mrs2009.91.
Повний текст джерелаDobrinsky, A., G. Simin, R. Gaska, and M. Shur. "III-Nitride Materials and Devices for Power Electronics." ECS Transactions 58, no. 4 (August 31, 2013): 129–43. http://dx.doi.org/10.1149/05804.0129ecst.
Повний текст джерелаДисертації з теми "III-Nitride Materials"
Kumaresan, Vishnuvarthan. "Novel substrates for growth of III-Nitride materials." Thesis, Paris 6, 2016. http://www.theses.fr/2016PA066538/document.
Повний текст джерелаA major advantage of semiconductor nanowires (NWs) is the possibility to integrate these nano-materials on various substrates. This perspective is particularly attractive for III-nitrides, for which there is a lack of an ideal substrate. We examined the use of novel templates for growing GaN NWs by plasma assisted molecular beam epitaxy. We explored three approaches with a common feature: the base support is a cost-efficient amorphous substrate and a thin crystalline material is deposited on the support to promote epitaxial growth of GaN NWs.In the first approach, we formed polycrystalline Si thin films on amorphous support by a process called aluminum-induced crystallization (AIC-Si). The conditions of this process were optimized to get a strong [111] fiber-texture of the Si film which enabled us to grow vertically oriented GaN NWs. The same idea was implemented with graphene as an ultimately thin crystalline material transferred on SiOx. We illustrated for the first time in literature that GaN NWs and the graphene layer have a single relative in-plane orientation. We propose a plausible epitaxial relationship and demonstrate that the number of graphene layers has a strong impact on GaN nucleation. Proof-of-concept for selective area growth of NWs is provided for these two approaches. As a simple approach, the possibility of growing NWs directly on amorphous substrates was explored. We use thermal silica and fused silica. Self-induced GaN NWs were formed with a good verticality on both substrates. Based on our observations, we conclude that the epitaxial growth of GaN NWs on graphene looks particularly promising for the development of flexible devices
Kim, Kyounghoon. "Growth and characterization of III-nitride photonic materials /." Search for this dissertation online, 2004. http://wwwlib.umi.com/cr/ksu/main.
Повний текст джерелаRen, Christopher Xiang. "Multi-microscopy characterisation of III-nitride devices and materials." Thesis, University of Cambridge, 2017. https://www.repository.cam.ac.uk/handle/1810/264158.
Повний текст джерелаZhang, Hengfang. "Hot-wall MOCVD of N-polar group-III nitride materials." Licentiate thesis, Linköpings universitet, Halvledarmaterial, 2021. http://urn.kb.se/resolve?urn=urn:nbn:se:liu:diva-175502.
Повний текст джерелаAdditional funding agencies: Chalmers University of technology; ABB; Ericsson; Epiluvac; FMV; Gotmic; Saab; SweGaN; UMS; Swedish Foundation for Strategic Research under Grants No. FL12-0181, No. RIF14-055, and No. EM16-0024; Swedish Government Strategic Research Area in Materials Science on Functional Materials at Linköping University, Faculty Grant SFO Mat LiU No.2009- 00971.
West, Allen M. "Effects of dislocations on electronic properties of III-nitride materials." [Gainesville, Fla.] : University of Florida, 2005. http://purl.fcla.edu/fcla/etd/UFE0009281.
Повний текст джерелаBao, An. "Investigation on the properties of nanowire structures and hillocks of Group-III nitride materials." Thesis, University of Cambridge, 2018. https://www.repository.cam.ac.uk/handle/1810/276187.
Повний текст джерелаEiting, Christopher James. "Growth of III-V nitride materials by MOCVD for device applications /." Digital version accessible at:, 1999. http://wwwlib.umi.com/cr/utexas/main.
Повний текст джерелаCrawford, Samuel Curtis. "Synthesis of III-V nitride nanowires with controlled structure, morphology, and composition." Thesis, Massachusetts Institute of Technology, 2014. http://hdl.handle.net/1721.1/88370.
Повний текст джерелаCataloged from PDF version of thesis.
Includes bibliographical references (pages 173-182).
The III-V nitride materials system offers tunable electronic and optical properties that can be tailored for specific electronic and optoelectronic applications by varying the (In,Ga,Al)N alloy composition. While nitride thin films tend to suffer from high dislocation densities due to the lattice mismatch with growth substrates, nanowires can be grown dislocation-free on highly mismatched substrates including silicon. Furthermore, axial and radial junction configurations offer unique nanoscale device architectures that enable more optimal device design. In order to realize the potential benefits of III-V nitride nanowires, precise control of nanowire synthesis is required. This thesis describes the development of experimental techniques and theoretical models that guide the synthesis of Ill-V nitride and other compound semiconductor nanowires with control over material structure, morphology, and composition. First, GaN nanowires were synthesized with control over nanowire orientation, morphology, and defect density. Substrate orientation was used to control whether nanowires grew preferentially in the polar [0001] direction or the nonpolar [1-100] direction. Film deposition on the nanowire sidewalls was effectively minimized by reducing the Ga precursor flux and internanowire spacing. Using nonpolar-oriented GaN nanowires with uniform diameter, the diameter-dependent growth rate was modeled to demonstrate that growth is limited by nucleation at the perimeter of the seed/nanowire interface. Finally, Ni- and Au-seeded GaN nanowires were directly compared, and the higher growth rate and reduced defect density in Ni-seeded nanowires were consistent with a reduced seed/nanowire interfacial energy. Next, nonpolar-oriented InN/InGaN axial heterostructure nanowires were grown by introducing Ga precursors during InN nanowire growth. The formation of GaN shells placed an upper limit on the allowable Ga precursor flux. Shell deposition was minimized by operating at higher temperature and pressure. However, a reduction in the local supply of Ga to the seed particle also limited InGaN formation. Therefore, brief high-flux pulses were used at lower pressure to form InN/InGaN axial heterostructures with minimal shell formation. Electron tomography and energy dispersive X-ray spectroscopy were used to analyze the Ga-driven driven changes in nanowire morphology and composition, respectively. The reduction in nanowire diameter upon the introduction of Ga was found to be driven by changes in seed particle composition. A flow-controlled approach was developed to modulate the diameter along individual nanowires, which can enable unique properties including enhanced light trapping in nanowire arrays and increased phonon scattering in thermoelectrics. In InN nanowires, a reduction in V flow produced segments with larger diameters and slower growth rates. A reduction in III flow in GaN nanowires also produced segments with slower growth rates, but thinner diameters. These trends are a consequence of the separate pathways traveled by the III and V sources to the site of reaction, enabling control over the incorporation rate of III source into the seed particle and the extraction rate of III source out of the seed particle, respectively. Based on these promising results, models were developed to explore the potential for template-free nanowire diameter modulation via particle-mediated growth. The results from diameter-modulated InN and GaN nanowires were evaluated considering contributions of seed particle volume, wetting angle, and three-dimensional morphology to the observed diameter changes. To achieve large diameter ratios using liquid seed particles, significant changes in both seed particle volume and wetting angle are necessary. Furthermore, the model was used to evaluate the surface energy and morphology of the liquid/solid interface. The interface was found to not be flat, contrary to common assumptions, which has significant implications for nanowire growth models. Finally, we extended the flow-controlled diameter modulation approach to GaAs nanowires, demonstrating that the technique is generally applicable to particle-mediated compound semiconductor nanowires. Both the III and V sources were varied during growth, producing similar trends in diameter and growth rate as with III-V nitride nanowires. Notably, three different types of [111]B-oriented nanowires were observed and had discrete differences in diameter modulation, growth rate, and cross-sectional shape, which were attributed to differences in seed particle phase. By controlling growth conditions during nanowire nucleation, each of the three types of nanowires were preferentially produced, indicating that the seed particle phase can be controllably varied in compound-forming seed alloys. Together, these results provide a foundation for fabricating III-V nitride and other nanowires with control over material structure, morphology, and composition. Experimental techniques and theoretical models were developed that enable control over growth direction, tapering, growth rate, defect density, composition, and diameter. These tools are helpful in achieving nanowires with rationally tailored properties for functional nanowire-based devices.
by Samuel Curtis Crawford.
Ph. D.
Nguyen, Hieu. "Molecular beam epitaxial growth, characterization and device applications of III-Nitride nanowire heterostructures." Thesis, McGill University, 2012. http://digitool.Library.McGill.CA:80/R/?func=dbin-jump-full&object_id=107905.
Повний текст джерелаRécemment, les hétérostructures à base de nitride et de groupe III ont fait l'objet de recherches intensives. Grâce à la relaxation latérale effective du stress, de telles hétérostructures d'échelle nanométrique peuvent être déposés sur du Silicium ou d'autres substrats. Celles-ci démontrent une réduction dramatique des dislocations et des champs de polarisations comparativement à leurs contreparties planes. Cette dissertation rapporte l'accomplissement d'une nouvelle classe de matériau nanométrique, soit des hétérostructures III-nitride incluant InGaN/GaN point dans fils ainsi que des nanofils d'InN presque sans défauts sur du Silicium. De plus, nous avons développé une nouvelle génération de dispositifs à base de nanofils, incluant des diodes émettrices de lumière (LEDs) à efficacité ultra haute et spectre visible complet ainsi que des cellules solaires sur une gaufre de Silicium. Nous avons identifié 2 mécanismes majeurs, incluant le faible transport des trous et le surplus d'électrons, qui limitent sérieusement la performance des LEDs à base de nanofils de GaN. Avec l'ajout de certaines techniques spéciales de modulation de type p, et une couche bloquante d'électrons faite de AlGaN dans la région active de la LED point dans fil. Par ailleurs, nous avons démontré des LEDs blanche sans phosphore qui démontrent, pour la première fois, une efficacité quantique supérieure à 50% ainsi qu'une baisse d'efficacité négligeable jusqu'à ~ 2,000A/cm2 et des caractéristiques d'émissions très hautes et stables à température pièce. Celles-ci sont donc toutes désignées pour des applications d'illumination intelligentes et des écrans pleines couleurs. La croissance par épitaxie, la fabrication et la caractérisation des nanofils d'InN:Mg/i-InN/InN:Si axiaux sur des substrats de Si(111) de type n et démontré la première cellule solaire à base d'InN. Sous l'illumination d'un soleil (AM 1.5G), les dispositifs démontrent une densité de courant de ~ 14.4 mA/cm2 en court-circuit, un voltage de circuit ouvert de 0.14V, un facteur de remplissage de 34.0% et une efficacité de conversion d'énergie de 0.68%. Ce travail ouvre des portes excitantes pour des cellules solaires plein spectre de troisième génération à base de nanofils d'InGaN.
Eriksson, Martin. "Photoluminescence Characteristics of III-Nitride Quantum Dots and Films." Doctoral thesis, Linköpings universitet, Halvledarmaterial, 2017. http://urn.kb.se/resolve?urn=urn:nbn:se:liu:diva-139766.
Повний текст джерелаКниги з теми "III-Nitride Materials"
Chuan, Feng Zhe, ed. III-nitride: Semiconductor materials. London: Imperial College Press, 2006.
Знайти повний текст джерелаOmar, Manasreh Mahmoud, and Ferguson Ian T, eds. III-nitride semiconductor: Growth. New York: Taylor & Francis, 2003.
Знайти повний текст джерелаChuan, Feng Zhe, ed. III-nitride devices and nanoengineering. London: Imperial College Press, 2008.
Знайти повний текст джерелаT, Yu E., and Manasreh Mahmoud Omar, eds. III-V nitride semiconductors: Applications & devices. New York: Taylor & Francis, 2003.
Знайти повний текст джерелаAyşe, Erol, ed. Dilute III-V nitride semiconductors and material systems: Physics and technology. Berlin: Springer, 2008.
Знайти повний текст джерелаAyşe, Erol, ed. Dilute III-V nitride semiconductors and material systems: Physics and technology. Berlin: Springer, 2008.
Знайти повний текст джерелаErol, Ayşe. Dilute III-V nitride semiconductors and material systems: Physics and technology. Berlin: Springer, 2008.
Знайти повний текст джерелаSymposium, on III-V. Nitride Materials and Processes (2nd 1997 Paris France). Proceedings of the Second Symposium on III-V Nitride Materials and Processes. Pennington, NJ: Electrochemical Society, 1998.
Знайти повний текст джерелаSymposium, on III-V. Nitride Materials and Processes (1st 1996 Los Angeles Calif ). Proceedings of the First Symposium on III-V Nitride Materials and Processes. Pennington, NJ: Electrochemical Society, 1996.
Знайти повний текст джерелаSymposium on III-V Nitride Materials and Processes (3rd 1998 Boston, Mass.). Proceedings of the Third Symposium on III-V Nitride Materials and Processes. Edited by Moustakas T. D, Mohney S. E, Pearton S. J, Electrochemical Society. Dielectric Science and Technology Division., Electrochemical Society Electronics Division, and Electrochemical Society. High Temperature Materials Division. Pennington, N.J: Electrochemical Society, Inc., 1999.
Знайти повний текст джерелаЧастини книг з теми "III-Nitride Materials"
Shen, Bo, Ning Tang, XinQiang Wang, ZhiZhong Chen, FuJun Xu, XueLin Yang, TongJun Yu, et al. "III-Nitride Materials and Characterization." In Handbook of GaN Semiconductor Materials and Devices, 3–52. Boca Raton : Taylor & Francis, CRC Press, 2017. | Series: Series in optics and optoelectronics: CRC Press, 2017. http://dx.doi.org/10.1201/9781315152011-1.
Повний текст джерелаNakamura, Shuji. "III-V Nitride Based LEDs." In GaN and Related Materials, 471–507. London: CRC Press, 2021. http://dx.doi.org/10.1201/9781003211082-15.
Повний текст джерелаBinari, Steven C., and Harry B. Dietrich. "III-V Nitride Electronic Devices." In GaN and Related Materials, 509–34. London: CRC Press, 2021. http://dx.doi.org/10.1201/9781003211082-16.
Повний текст джерелаLi, Jinmin, Junxi Wang, Xiaoyan Yi, Zhiqiang Liu, Tongbo Wei, Jianchang Yan, and Bin Xue. "Epitaxial of III-Nitride LED Materials." In Springer Series in Materials Science, 33–73. Singapore: Springer Singapore, 2020. http://dx.doi.org/10.1007/978-981-15-7949-3_4.
Повний текст джерелаWong, William S., Timothy D. Sands, and Nathan W. Cheung. "Integration of GaN Thin Films with Dissimilar Substrate Materials by Wafer Bonding and Laser Lift-Off." In III-V Nitride Semiconductors, 107–59. Boca Raton: CRC Press, 2022. http://dx.doi.org/10.1201/9780367813628-3.
Повний текст джерелаBisi, Davide, Isabella Rossetto, Matteo Meneghini, Gaudenzio Meneghesso, and Enrico Zanoni. "Reliability in III-Nitride Devices." In Handbook of GaN Semiconductor Materials and Devices, 367–430. Boca Raton : Taylor & Francis, CRC Press, 2017. | Series: Series in optics and optoelectronics: CRC Press, 2017. http://dx.doi.org/10.1201/9781315152011-12.
Повний текст джерелаLin, Chien-Chung, Lung-Hsing Hsu, Yu-Ling Tsai, Hao-chung (Henry) Kuo, Wei-Chih Lai, and Jinn-Kong Sheu. "III–V Nitride-Based Photodetection." In Handbook of GaN Semiconductor Materials and Devices, 597–613. Boca Raton : Taylor & Francis, CRC Press, 2017. | Series: Series in optics and optoelectronics: CRC Press, 2017. http://dx.doi.org/10.1201/9781315152011-19.
Повний текст джерелаLin, Chien-Chung, Lung-Hsing Hsu, Yu-Ling Tsai, Hao-chung Kuo, Wei-Chih Lai, and Jinn-Kong Sheu. "III–V Nitride-Based Photodetection." In Handbook of GaN Semiconductor Materials and Devices, 597–613. Taylor & Francis Group, 6000 Broken Sound Parkway NW, Suite 300, Boca Raton, FL 33487-2742: CRC Press, 2017. http://dx.doi.org/10.1201/9781315152011-25.
Повний текст джерелаLi, Jinmin, Junxi Wang, Xiaoyan Yi, Zhiqiang Liu, Tongbo Wei, Jianchang Yan, and Bin Xue. "III-Nitride LED Chip Fabrication Techniques." In Springer Series in Materials Science, 151–83. Singapore: Springer Singapore, 2020. http://dx.doi.org/10.1007/978-981-15-7949-3_8.
Повний текст джерелаLi, Jinmin, Junxi Wang, Xiaoyan Yi, Zhiqiang Liu, Tongbo Wei, Jianchang Yan, and Bin Xue. "Packaging of Group-III Nitride LED." In Springer Series in Materials Science, 185–202. Singapore: Springer Singapore, 2020. http://dx.doi.org/10.1007/978-981-15-7949-3_9.
Повний текст джерелаТези доповідей конференцій з теми "III-Nitride Materials"
Sakr, Salam, Maria Tchernycheva, Juliette Mangeney, Elias Warde, Nathalie Isac, Lorenzo Rigutti, Raffaele Colombelli, et al. "III-nitride intersubband photonics." In Gallium Nitride Materials and Devices VII. SPIE, 2012. http://dx.doi.org/10.1117/12.900002.
Повний текст джерелаAger III, Joel W., Junqiao Wu, Kin M. Yu, R. E. Jones, S. X. Li, Wladek Walukiewicz, Eugene E. Haller, Hai Lu, and William J. Schaff. "Group III-nitride alloys as photovoltaic materials." In Optical Science and Technology, the SPIE 49th Annual Meeting, edited by Ian T. Ferguson, Nadarajah Narendran, Steven P. DenBaars, and John C. Carrano. SPIE, 2004. http://dx.doi.org/10.1117/12.561935.
Повний текст джерелаZhang, Jing, and Nelson Tansu. "Development of III-Nitride Thermoelectric Characterizations and Materials." In Asia Communications and Photonics Conference. Washington, D.C.: OSA, 2013. http://dx.doi.org/10.1364/acp.2013.ath4k.2.
Повний текст джерелаZhang, Jing, and Nelson Tansu. "Development of III-Nitride Thermoelectric Characterizations and Materials." In Asia Communications and Photonics Conference. Washington, D.C.: OSA, 2013. http://dx.doi.org/10.1364/acpc.2013.ath4k.2.
Повний текст джерелаSmith, David J., Lin Zhou, and T. D. Moustakas. "Structural characterization of III-nitride materials and devices." In SPIE OPTO, edited by Manijeh Razeghi, Rengarajan Sudharsanan, and Gail J. Brown. SPIE, 2011. http://dx.doi.org/10.1117/12.877470.
Повний текст джерелаChow, Peter P., Jody J. Klaassen, James M. Van Hove, Andrew M. Wowchak, Christina Polley, and David King. "Group III-nitride materials for ultraviolet detection applications." In Symposium on Integrated Optoelectronics, edited by Gail J. Brown and Manijeh Razeghi. SPIE, 2000. http://dx.doi.org/10.1117/12.382130.
Повний текст джерелаDavies, Ryan, Mat Ivill, Jennifer Hite, Brent Gila, Gerald Thaler, Cammy Abernathy, S. Pearton, Christopher Stanton, and John Zavada. "Gd-doped III-nitride Dilute Magnetic Semiconductor Materials." In 2008 MRS Fall Meetin. Materials Research Society, 2008. http://dx.doi.org/10.1557/proc-1111-d03-05.
Повний текст джерелаRao, Dheemahi, Ashalatha Indiradevi Kamalasanan Pillai, Magnus Garbrecht, and Bivas Saha. "Scandium Nitride as a Gateway III-Nitride Semiconductor for Optoelectronic Artificial Synaptic Devices." In Neuromorphic Materials, Devices, Circuits and Systems. València: FUNDACIO DE LA COMUNITAT VALENCIANA SCITO, 2023. http://dx.doi.org/10.29363/nanoge.neumatdecas.2023.052.
Повний текст джерелаBhattacharya, Arnab. "2D layered materials: novel substrates for III-nitride growth." In International Conference on Fibre Optics and Photonics. Washington, D.C.: OSA, 2014. http://dx.doi.org/10.1364/photonics.2014.m2b.3.
Повний текст джерелаRuden, P. P. "Materials-theory-based device modeling for III-nitride devices." In Optoelectronics '99 - Integrated Optoelectronic Devices, edited by Gail J. Brown and Manijeh Razeghi. SPIE, 1999. http://dx.doi.org/10.1117/12.344555.
Повний текст джерелаЗвіти організацій з теми "III-Nitride Materials"
Speck, James S. Development of III-Nitride Materials for IR Applications. Fort Belvoir, VA: Defense Technical Information Center, June 2008. http://dx.doi.org/10.21236/ada483731.
Повний текст джерелаShul, R. J., A. J. Howard, S. P. Kilcoyne, S. J. Pearton, C. R. Abernathy, C. B. Vartuli, P. A. Barnes, and M. J. Bozack. High rate ECR etching of III-V nitride materials. Office of Scientific and Technical Information (OSTI), December 1994. http://dx.doi.org/10.2172/81054.
Повний текст джерелаAbdellah, Bouguenna, Bouguenna Driss, and Boudghene Stambouli Amine. Performance analysis of III-nitride materials based biosensors for detection of albumin protein. Peeref, June 2023. http://dx.doi.org/10.54985/peeref.2306p3863264.
Повний текст джерелаKurtz, Steven Ross, Terry W. Hargett, Darwin Keith Serkland, Karen Elizabeth Waldrip, Normand Arthur Modine, John Frederick Klem, Eric Daniel Jones, Michael Joseph Cich, Andrew Alan Allerman, and Gregory Merwin Peake. III-antimonide/nitride based semiconductors for optoelectronic materials and device studies : LDRD 26518 final report. Office of Scientific and Technical Information (OSTI), December 2003. http://dx.doi.org/10.2172/918384.
Повний текст джерелаMuth, John. Integrated Optical Pumping of Cr & Ti-Doped Sapphire Substrates With III-V Nitride Materials. Fort Belvoir, VA: Defense Technical Information Center, August 2005. http://dx.doi.org/10.21236/ada523728.
Повний текст джерелаYao, Huade W. Optical Properties of GaN and Other III-Nitride Semiconductor Materials Studied by Variable Angle Spectroscopic Ellipsometry. Fort Belvoir, VA: Defense Technical Information Center, December 2000. http://dx.doi.org/10.21236/ada391193.
Повний текст джерелаDavis, R. F., M. Harris, S. Halpern, S. Siebert, and M. Patel. Materials Processing and Device Development to Achieve Integration of Low Defect Density III Nitride Based Radio Frequency. Fort Belvoir, VA: Defense Technical Information Center, April 2001. http://dx.doi.org/10.21236/ada389624.
Повний текст джерелаDavis, Robert F., and Kevin J. Linthicum. Materials Processing and Device Development to Achieve Integration of Low Defect Density III Nitride Based Radio Frequency. Fort Belvoir, VA: Defense Technical Information Center, October 2000. http://dx.doi.org/10.21236/ada383629.
Повний текст джерелаPark, Gil Han, and Jin-Joo Song. (DURIP 99) MOCVD Growth With In-Situ Characterization and Femto-second Two-Color Laser Experiments for Widegap III-Nitride Materials and Device Development. Fort Belvoir, VA: Defense Technical Information Center, December 2001. http://dx.doi.org/10.21236/ada397733.
Повний текст джерела