Готові списки джерел за темами / High frequency electronic applications

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Добірка наукової літератури з теми "High frequency electronic applications"

Автор: Grafiati
Опубліковано: 10 березня 2023

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Статті в журналах з теми "High frequency electronic applications"

1

Zampardi, P. J., K. Runge, R. L. Pierson, J. A. Higgins, R. Yu, B. T. McDermott, and N. Pan. "Heterostructure-based high-speed/high-frequency electronic circuit applications." Solid-State Electronics 43, no. 8 (August 1999): 1633–43. http://dx.doi.org/10.1016/s0038-1101(99)00113-6.

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2

Adachi, Michael M. "(Invited) Thickness-Modulated MoS2 for High-Frequency Electronic Applications." ECS Meeting Abstracts MA2021-01, no. 14 (May 30, 2021): 664. http://dx.doi.org/10.1149/ma2021-0114664mtgabs.

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3

Tan, Qi Yao. "Applications of Simulation and Demo in High Frequency Electronic Circuit." Applied Mechanics and Materials 427-429 (September 2013): 450–54. http://dx.doi.org/10.4028/www.scientific.net/amm.427-429.450.

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This paper was based on the rich theoretical foundation and practical teaching experience, and focused on current teaching situation of high frequency electronic circuit and the cognition of simulation and demo, then it had the positive analysis on the superiority of simulation and demo in high frequency electronic circuit, and it also got the teaching case analysis on simulation and demo of parallel resonant circuit in the high frequency electronic circuit. Through establishment and verification of teaching effect model of high frequency electronic circuit, it can obtain that the teaching presents the advantage of positive feedback through the simulation and demo, and it also can provide new theoretical basis and path of exploration for the teaching research in this field.
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4

Headrick, J. M., and J. F. Thomason. "Applications of high-frequency radar." Radio Science 33, no. 4 (July 1998): 1045–54. http://dx.doi.org/10.1029/98rs01013.

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5

MU, Chunhong, Huaiwu ZHANG, Yingli LIU, Yuanqiang SONG, and Peng LIU. "Rare earth doped CaCu3Ti4O12 electronic ceramics for high frequency applications." Journal of Rare Earths 28, no. 1 (February 2010): 43–47. http://dx.doi.org/10.1016/s1002-0721(09)60048-x.

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6

Xun Gong, W. J. Chappell, and L. P. B. Katehi. "Multifunctional substrates for high-frequency applications." IEEE Microwave and Wireless Components Letters 13, no. 10 (October 2003): 428–30. http://dx.doi.org/10.1109/lmwc.2003.818525.

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7

BURKE, P. J., C. RUTHERGLEN, and Z. YU. "SINGLE-WALLED CARBON NANOTUBES: APPLICATIONS IN HIGH FREQUENCY ELECTRONICS." International Journal of High Speed Electronics and Systems 16, no. 04 (December 2006): 977–99. http://dx.doi.org/10.1142/s0129156406004119.

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In this paper, we review the potential applications of single-walled carbon nanotubes in three areas: passives (interconnects), actives (transistors), and antennas. In the area of actives, potential applications include transistors for RF and microwave amplifiers, mixers, detectors, and filters. We review the experimental state of the art, and present the theoretical predictions (where available) for ultimate device performance. In addition, we discuss fundamental parameters such as dc resistance as a function of length for individual, single-walled carbon nanotubes.
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8

Hamed, Ahmed, Mohamed Saeed, and Renato Negra. "Graphene-Based Frequency-Conversion Mixers for High-Frequency Applications." IEEE Transactions on Microwave Theory and Techniques 68, no. 6 (June 2020): 2090–96. http://dx.doi.org/10.1109/tmtt.2020.2978821.

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9

Gardes, C., Y. Roelens, S. Bollaert, J. S. Galloo, X. Wallart, A. Curutchet, C. Gaquiere, et al. "Ballistic nanodevices for high frequency applications." International Journal of Nanotechnology 5, no. 6/7/8 (2008): 796. http://dx.doi.org/10.1504/ijnt.2008.018698.

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10

Alshehri, Ali H., Malgorzata Jakubowska, Anna Młożniak, Michal Horaczek, Diana Rudka, Charles Free, and J. David Carey. "Enhanced Electrical Conductivity of Silver Nanoparticles for High Frequency Electronic Applications." ACS Applied Materials & Interfaces 4, no. 12 (November 26, 2012): 7007–10. http://dx.doi.org/10.1021/am3022569.

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Дисертації з теми "High frequency electronic applications"

1

Massicotte, Mathieu. "Graphene electronics for high frequency, scalable applications." Thesis, McGill University, 2012. http://digitool.Library.McGill.CA:80/R/?func=dbin-jump-full&object_id=110547.

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The advent of large-scale graphene grown by chemical vapor deposition (CVD) offers a viable route towards high-frequency (HF) graphene-based analogue electronics. A significant challenge, however, is to synthesize and fabricate HF graphene-based devices with high carrier mobility. Here, we report our efforts to understand and control the CVD growth mechanism of graphene on copper, to characterize the synthesized film, and to fabricate graphene transistors and HF devices. In parallel, we describe the synthesis of large pristine dendritic graphene flakes that we name graphlocons. The electronic transport properties and magnetoresistance were assessed from 300 K to 100 mK and mobility up to 460 cm^2/Vs was obtained with a residual charge carrier density of 1.6x10^12 cm^-2. HF scattering parameters were measured from 0.04 to 20 GHz but they showed no dependence on temperature and magnetic field. This work provides a starting point for improving the structural and electronic properties of CVD graphene, and for exploring new phenomena in the GHz frequency range.
L'avènement du graphène produit à grande-échelle par dépôt chimique en phase vapeur (CVD) ouvre une voie vers l'électronique haute-fréquence (HF) à base de graphène. Synthétiser du graphène possédant une grande mobilité des porteurs de charge et l'incorporer à des dispositifs HF constitue cependant un important défi. Nous présentons ici le fruit de nos efforts pour comprendre et contrôler le mécanisme de croissance CVD du graphène sur le cuivre, caractériser les films ainsi produits, et fabriquer des transistors et dispositifs HF à base de graphène. Parallèlement, nous décrivons la synthèse de grands flocons dendritiques de graphène que nous appelons graphlocons. Les propriété électroniques et la magnetorésistance de ces échantillons ont été mesurées de 300 K à 100 mK et la mobilité la plus élevée obtenue est de 460 cm^2/Vs avec une densité de porteurs de charge résiduels de 1.6x10^12 cm^-2 . Les paramètres S de haute fréquence ont été mesurés de 0.04 à 20 GHz mais aucune dépendance en température ou champ magnétique n'a été observée. Ce travail fourni un point de départ pour améliorer les propriétés structurales et électroniques du graphène produit par CVD, et pour explorer de nouveaux phénomènes dans le domaine des GHz. .
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2

Davari, Pooya. "High frequency high power converters for industrial applications." Thesis, Queensland University of Technology, 2013. https://eprints.qut.edu.au/62896/1/Pooya_Davari_Thesis.pdf.

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Анотація:
The main contribution of this project was to investigate power electronics technology in designing and developing high frequency high power converters for industrial applications. Therefore, the research was conducted at two levels; first at system level which mainly encapsulated the circuit topology and control scheme and second at application level which involves with real-world applications. Pursuing these objectives, varied topologies have been developed and proposed within this research. The main aim was to resolving solid-state switches limited power rating and operating speed while increasing the system flexibility considering the application characteristics. The developed new power converter configurations were applied to pulsed power and high power ultrasound applications for experimental validation.
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3

Skulason, Helgi. "High-frequency characterization and applications of graphene devices." Thesis, McGill University, 2013. http://digitool.Library.McGill.CA:80/R/?func=dbin-jump-full&object_id=119524.

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In this thesis, we have experimentally probed the microwave frequency electrodynamics of large area graphene, focussing on contactless measurements of graphene to extract material properties and implementation of non-reciprocal microwave devices. Our goal is to exploit interaction of graphene with electromagnetic waves in the microwave domain.By fabricating wideband graphene coplanar waveguides, we show that graphene has a constant wideband resistance from 17 Hz to 110 GHz due to negligible kinetic inductance and negligible skin effect up to 110 GHz. We characterize contact impedance between graphene and metal electrodes and our devices show that contact capacitance shorts the contact resistance above ~ 2 GHz, allowing for contactless measurements of graphene up to 110 GHz. We measured the magnetoconductance of large-area graphene under microwave excitation by employing Corbino disk geometry via the transfer of graphene films onto polished coaxial flanges. Our experimental setup allows for both passive and active graphene devices where the active devices are doped by field effect with an intrinsic silicon gate electrode transparent to microwaves. Magnetoconductive mobilities of ~ 1,000 cm2/Vs were extracted from a single component Drude model observed at high carrier density. An anomalous microwave magnetoresistance was also observed. We designed, fabricated and characterized a hollow waveguide isolator with a magnetically biased graphene acting as the non-reciprocal element via Faraday rotation. Our experimental setup allows for contactless characterization of conductivity, mobility and charge carrier density of the graphene film. Faraday rotation was measured up to 1.5° which resulted in isolation of 25 dB. We show that performance of the isolator can be improved by increasing carrier mobility in graphene. As the direction of Faraday rotation is contingent on majority charge carrier type in graphene, we give evidence that the isolation direction can be modulated and switched via field effect graphene device implemented in the hollow waveguide using a single low-power voltage source. We demonstrate the first voltage-tunable isolator with a maximum isolation of 47 dB and voltage-tunable isolation up to 26 dB. Our work suggests that other non-reciprocal devices such as circulators can be implemented compactly with graphene.
Dans cette thèse, nous avons expérimentalement sondé les micro-ondes électrodynamiques de graphène de grande surface, plus particulièrement les mesures de graphène sans contact pour en extraire les propriétés de la matière et la mise en œuvre de dispositifs non-réciproques générateurs de micro-ondes. Notre objectif consiste à exploiter l'interaction entre le graphène et les ondes électromagnétiques dans le domaine des micro-ondes. En fabriquant un guide d'ondes de graphène coplanaire à large bande, nous établissons que le graphène possède une résistance de large bande constante comprise entre 17 Hz et 110 GHz. Ceci est attribuable à l'inductivité cinétique et à l'effet pelliculaire négligeables jusqu'à 110 GHz. Nous décrivons l'impédance des contacts entre le graphène et les électrodes métalliques. Nos dispositifs démontrent que la capacitance de contact court-circuite la résistance de contact au-dessus de 2 GHz, permettant les mesures du graphène sans contact jusqu'à 110 GHz. Nous avons mesuré la conductivité magnétique du graphène à grande surface sous excitation de micro-ondes utilisant une géométrie de disque Corbino en transférant les films de graphène sur des embouts de câble coaxial polis. Notre installation permet l'utilisation de dispositifs de graphène actifs et passifs où les dispositifs actifs sont dopés par effet de champ avec une grille de silicium intrinsèque transparente aux micro-ondes. Nous avons extrait des mobilités à base de la conductivité magnétique autour de 1000 cm… en utilisant le model de Drude à une composante à haute densité. Une magnéto résistance atypique a également été observée. Nous avons créé, fabriqué et caractérisé un guide d'onde isolateur creux avec du graphène biaisé magnétiquement agissant comme élément non-réciproque par rotation de Faraday. Notre montage expérimentale permet la caractérisation sans contact de la conductivité, la mobilité et la densité de porteurs de charges du film de graphène. La rotation de Faraday a été mesuré jusqu'à 1.5 ce qui résulte en une isolation de 25dB. Nous démontrons que la performance de l'isolateur peut être améliorée en augmentant la mobilité dans le graphène. Étant donné que la direction de la rotation de Faraday dépend du signe du porteur de charge dominant dans le graphène, nous soumettons des données démontrant que la direction de l'isolation peut être modulée et changée en utilisant l'effet de champ implémenté dans le guide d'ondes creux avec une seule source de voltage à basse puissance. Notre travail suggère que d'autres dispositifs non-réciproques comme des circulateurs peuvent être implémentés de façon compacte avec du graphène.
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4

Lim, Ying Ying. "Printing conductive traces to enable high frequency wearable electronics applications." Thesis, Loughborough University, 2015. https://dspace.lboro.ac.uk/2134/17880.

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With the emergence of the Internet of Things (IoT), wireless body area networks (WBANs) are becoming increasingly pervasive in everyday life. Most WBANs are currently working at the IEEE 802.15.4 Zigbee standard. However there are growing interests to investigate the performance of BANs operating at higher frequencies (e.g. millimetre-wave band), due to the advantages offered compared to those operating at lower microwave frequencies. This thesis aims to realise printed conductive traces on flexible substrates, targeted for high frequency wearable electronics applications. Specifically, investigations were performed in the areas pertaining to the surface modification of substrates and the electrical performance of printed interconnects. Firstly, a novel methodology was proposed to characterise the dielectric properties of a non-woven fabric (Tyvek) up to 20 GHz. This approach utilised electromagnetic (EM) simulation to improve the analytical equations based on transmission line structures, in order to improve the accuracy of the conductor loss values in the gigahertz range. To reduce the substrate roughness, an UV-curable insulator was used to form a planarisation layer on a non-porous substrate via inkjet printing. The results obtained demonstrated the importance of matching the surface energy of the substrate to the ink to minimise the ink de-wetting phenomenon, which was possible within the parameters of heating the platen. Furthermore, the substrate surface roughness was observed to affect the printed line width significantly, and a surface roughness factor was introduced in the equation of Smith et al. to predict the printed line width on a substrate with non-negligible surface roughness (Ra ≤ 1 μm). Silver ink de-wetting was observed when overprinting silver onto the UV-cured insulator, and studies were performed to investigate the conditions for achieving electrically conductive traces using commercial ink formulations, where the curing equipment may be non-optimal. In particular, different techniques were used to characterise the samples at different stages in order to evaluate the surface properties and printability, and to ascertain if measurable resistances could be predicted. Following the results obtained, it was demonstrated that measurable resistance could be obtained for samples cured under an ambient atmosphere, which was verified on Tyvek samples. Lastly, a methodology was proposed to model for the non-ideal characteristics of printed transmission lines to predict the high frequency electrical performance of those structures. The methodology was validated on transmission line structures of different lengths up to 30 GHz, where a good correlation was obtained between simulation and measurement results. Furthermore, the results obtained demonstrate the significance of the paste levelling effect on the extracted DC conductivity values, and the need for accurate DC conductivity values in the modelling of printed interconnects.
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5

Bar, Galit 1970. "High-frequency time domain electron paramagnetic resonance : methods and applications." Thesis, Massachusetts Institute of Technology, 2004. http://hdl.handle.net/1721.1/17826.

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Анотація:
Thesis (Ph. D.)--Massachusetts Institute of Technology, Dept. of Chemistry, 2004.
Vita.
Includes bibliographical references.
There are numerous advantages to high frequency (high field) electron paramagnetic resonance (EPR) spectroscopy. Two of the most important are improved sensitivity and the improved resolution of field dependent interactions. In addition, there are many attractive features to time domain spectroscopy. Pulsed EPR allows for the design of experiments, which can specifically be used to study structure and dynamics of paramagnetic species and provide utmost resolution by separating interactions from each other. The combination of pulsed techniques and high frequencies is not only complimentary to continuous wave (CW) low frequency EPR but it also greatly increases the accessible information on paramagnetic species. High frequency, time domain EPR is still in its infancy. Spectrometers at W-band ([approximately] 95 GHz) are now available commercially but to date very few spectrometers operating at higher frequencies have been described. The spectrometer developed in the Francis Bitter Magnet Laboratory operates at a microwave (MW) frequency of 139.5 GHz corresponding to [approximately] 5 T magnetic field. The applications presented in this thesis illustrate the potential of high frequency, time domain EPR spectroscopy at 139.5 GHz in obtaining structural and mechanistic insights of several paramagnetic systems. Well resolved EPR spectra observed at 139.5 GHz of the stable tyrosine radical in ribonucleotide reductase (RNR) revealed the existence of a hydrogen bond in RNR from yeast, chapter 1. The bond length and orientation were determined from the nuclear frequencies of the proton, detected by orientation selective electron nuclear double resonance (ENDOR).
(cont.) The advantage of the time domain detection scheme is demonstrated in chapters 4, 5 and 6. A stimulated echo sequence is used to separate different organic radicals associated with the reduction chemistry and inhibition mechanisms of RNR. Using the dispersion in relaxation rates at high temperature ([approximately] 60 K) it is possible to filter the multi component spectrum. The assignment of new radicals is possible at high field, 5 T, due to the high resolution in g anisotropy. The findings support earlier proposals for the mechanism of nucleotide reduction and inhibition of this very important enzyme. To study photoexcited triplet molecules a light source was coupled to the high frequency spectrometer and the pulsed mode detection scheme was used to acquire EPR spectra. The new technique is demonstrated on several model systems. In addition to the basic advantages described above, high frequency EPR opens new frontiers for high spin systems, S >[or equal to] 1, with large spin-spin interaction. Because of the inverse field dependency of the zero field splitting, such systems may be totally EPR-silent at normal EPR frequencies. However their EPR spectra are accessible at high frequencies due to the reduction of linewidth. The Mn(II), S = 5/2, in superoxide dismutase (SOD) is a good example for such system.
by Galit Bar.
Ph.D.
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6

ABDELHAMID, ESLAM. "Innovative Digital dc-dc Architectures for High-Frequency High-Efficiency Applications." Doctoral thesis, Università degli studi di Padova, 2018. http://hdl.handle.net/11577/3427310.

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The new generation of automotive controllers requires a space-constrained and high-efficiency step-down architecture. Hence, recently a potential alternative for the conventional step-down topologies is highly demanded. The new architecture should meet the high power density, high efficiency, wide operating ranges, high EMI capabilities, and low-cost requirements. This thesis, developed at the University of Padova and sponsored by Infineon Technologies, aims at investigating potential candidate topologies for automotive step-down conversion capable of eliminating or offsetting some of the common shortcomings of conventional solutions currently in use. Many research effort is paid for the soft switching quasi-resonant topologies in order to miniaturize the passive components through the switching frequency increase. However, the variable switching frequency, increased components count, and narrow operating ranges prevent the wide adoption of the quasi-resonant topologies in the target application. The first objective of this project is to investigate the quasi-resonant buck converter topology in order to stand on the limitations and operating conditions boundaries of such topology. The digital efficiency optimization technique, which is developed in this work, extends the operating ranges in addition to reduce operating frequency variations. On the other hand, the multilevel hybrid topologies are potentially able to meet the aforementioned requirements. By multiplying ripple frequency and fractioning voltage across the switching node the multilevel topologies have the direct advantage of reduced passive components. Moreover, multilevel topologies have many other attractive features include reduced MOSFET voltage rating, fast transient response, a Buck-like wide range voltage conversion ratio, and improved efficiency. These features candidate the multilevel topologies, in particular, the three-level flying-capacitor converter, as an innovative alternative for the conventional topologies for the target application. Accordingly, the three-level flying-capacitor converter (3LFC) is investigated as a second objective for this project. Flying-capacitor (FC) voltage balancing in such topology is quite challenging. The 3LFC under valley current mode control shows an interesting performance, where the FC voltage is self-balanced. In this work, the stability of the converter under valley and peak current mode control is studied and a simplified stability criterion is proposed. The proposed criterion address both current loop static stability and FC voltage stability. The valley current mode modulator results to be inherently stable as soon as the current static instability is compensated with an external ramp. On contrary, the FC voltage in peak current mode control (P-CMC) will never be balanced unless the converter operated with relatively high static peak-to-peak inductor current ripple. Since P-CMC has an inherent over-current protection feature, P-CMC based architectures are widely used in the industrial applications. However, in practice the peak current controlled three-level converter is inherently unstable. Consequently, the instability of the P-CMC 3LFC is addressed. A sensorless stabilizing approach, with two implementation methodologies, is developed in this work. The proposed technique eliminates the instability associated with the FC voltage runaway, in addition to FC voltage self-balancing. Moreover, the proposed methodology offers reduced size, less complexity, and input voltage independent operation. Besides, the proposed approach can be extended to system with a higher number of voltage levels with minimal hardware complexity. The proposed techniques and methodologies in this work are validated using simulation models and experimentally. Finally, in the conclusions the results of the Ph.D. activity are summarized and recommendations for the further development are outlined.
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7

Cheng, Jung-hui 1960. "Steady-state and dynamic analysis of high-order resonant converters for high-frequency applications." Diss., The University of Arizona, 1997. http://hdl.handle.net/10150/282337.

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Practical steady-state and dynamic design and analysis for high-order dc/dc resonant converters is presented. The analysis is mainly based on two types of the resonant converters, parallel-type and Class-D (a series-type), which are suitable for high-frequency applications. In the analysis of parallel resonant converters, the key step in the derivation of steady-state analytic equations for LLC-type parallel (LLC-PRC) and LLCC-type series-parallel resonant converter (LLCC-SPRC) is to reduce the order of their state-space models. In particular, the analytic equations for LLCC-SPRC can also be used to design and analyze the LC-PRC, LLC-PRC, and LCC-type series-parallel resonant converters. A simple design procedure along with design examples is given based on the derived analytic equations. Experimental LLC-PRC and LLCC-SPRC are implemented to verify the design results. In the analysis of the zero-voltage switch (ZVS) Class-D converter, both steady-state and dynamic analysis methods are presented. The analysis is based on the Class-D converter with a variable capacitance switch (VCS) for voltage regulation at constant frequency. A generalized DC model for steady-state and dynamic analysis of the converter is given. A simplified small-signal model is found from perturbing the DC model and can be used to predict the low-frequency dynamic control- and line-to-output transfer functions. To predict the high-frequency dynamics, two models are derived based on the amplitude and phase modulations from communication theory. Besides the steady-state and small-signal modeling, a strategy to achieve a stable loop gain for closed-loop operation is addressed. A compensation controller for closed-loop operation of the VCS is developed. All the calculated and design results of the dynamic responses are verified based on the experimental measurements from the prototype converter.
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8

Lou, Fan. "Mismatch-insensitive N-path multirate SC Sigma-Delta Modulator for high-frequency applications." Thesis, University of Macau, 2002. http://umaclib3.umac.mo/record=b1445818.

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9

Tsang, Tommy 1977. "The design of low-voltage high frequency CMOS low noise amplifiers for future wireless applications /." Thesis, McGill University, 2002. http://digitool.Library.McGill.CA:80/R/?func=dbin-jump-full&object_id=33998.

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Анотація:
RFIC's are traditionally implemented in III--V compounded semiconductors or in bipolar technologies, due to their superior RF performances (e.g. low noise) when compared to CMOS technologies. The challenges are not only to design RF transceivers in standard CMOS processes, but also to establish design methodologies and optimization techniques for their building blocks.
This thesis is concerned with one of the key building blocks, namely the Low Noise Amplifier (LNA). Several low-voltage LNA's were successfully implemented in a standard 0.18 mum CMOS technology, operating in the 5--9 GHz frequency band, targeted for future wireless applications. A new and very simple gain control mechanism is suggested for the first time, which does not affect the optimum noise and impedance matching. The 8--9 GHz prototypes are the highest LNA frequencies reported to-date in CMOS. All prototypes exhibit gain tuning ranges of over 10 dB, and can operate from a supply voltage as low as 0.7 V.
A design strategy for optimizing RF passive components (e.g. inductors, capacitors, and varactors) beyond 5 GHz is presented.
An attempt is made to explore the possibility of using Micro-Electro Mechanical Systems (MEMS) in the RF arena. (Abstract shortened by UMI.)
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10

Karisan, Yasir. "Full-wave Electromagnetic Modeling of Electronic Device Parasitics for Terahertz Applications." The Ohio State University, 2015. http://rave.ohiolink.edu/etdc/view?acc_num=osu1419019102.

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Книги з теми "High frequency electronic applications"

1

Reisch, M. High-Frequency Bipolar Transistors: Physics, Modeling, Applications. Berlin, Heidelberg: Springer Berlin Heidelberg, 2003.

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2

Fay, Patrick, Debdeep Jena, and Paul Maki, eds. High-Frequency GaN Electronic Devices. Cham: Springer International Publishing, 2020. http://dx.doi.org/10.1007/978-3-030-20208-8.

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3

Khamas, Salam. High frequency applications of superconductors. Birmingham: University of Birmingham, 1988.

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4

Martens, Luc. High-Frequency Characterization of Electronic Packaging. Boston, MA: Springer US, 1998. http://dx.doi.org/10.1007/978-1-4615-5623-7.

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5

Martens, Luc. High-frequency characterization of electronic packaging. Boston: Kluwer Academic Publishers, 1998.

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6

F, Nibler, and Institution of Electrical Engineers, eds. High-frequency circuit engineering. London: Institution of Electrical Engineers, 1996.

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7

Reisch, M. High-frequency bipolar transistors: Physics, modeling, applications. Berlin: Springer, 2003.

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8

Skutt, Glenn. Modeling multiwinding transformers for high-frequency applications. Durham, N.C: Duke University, 1988.

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9

High-frequency bipolar transistors: Physics, modelling, applications. Berlin: Springer, 2003.

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10

Durbin, Michael. All about high-frequency trading. New York, NY: McGraw-Hill, 2010.

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Частини книг з теми "High frequency electronic applications"

1

Condori Quispe, Hugo O., Berardi Sensale-Rodriguez, and Patrick Fay. "Plasma-Wave Propagation in GaN and Its Applications." In High-Frequency GaN Electronic Devices, 159–79. Cham: Springer International Publishing, 2019. http://dx.doi.org/10.1007/978-3-030-20208-8_6.

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2

Sollner, T. C. L. Gerhard, Elliott R. Brown, C. D. Parker, and W. D. Goodhue. "High-Frequency Applications of Resonant-Tunneling Devices." In Electronic Properties of Multilayers and Low-Dimensional Semiconductor Structures, 283–96. Boston, MA: Springer US, 1990. http://dx.doi.org/10.1007/978-1-4684-7412-1_16.

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3

Vélez, Adolfo, and Hans-Walter Glock. "Superconducting Radio-Frequency for High-Current CW Applications." In Synchrotron Light Sources and Free-Electron Lasers, 1–20. Cham: Springer International Publishing, 2019. http://dx.doi.org/10.1007/978-3-319-04507-8_59-1.

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Vélez, Adolfo, and Hans-Walter Glock. "Superconducting Radio-Frequency for High-Current CW Applications." In Synchrotron Light Sources and Free-Electron Lasers, 581–601. Cham: Springer International Publishing, 2020. http://dx.doi.org/10.1007/978-3-030-23201-6_59.

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5

Sommer, J. P., R. Dudek, B. Michel, M. Boheim, and W. Hager. "Thermal and Mechanical Characterization of Electronic Packages in Extremely High Frequency Applications by Means of Finite Element Analysis." In Thermal Management of Electronic Systems II, 349–59. Dordrecht: Springer Netherlands, 1997. http://dx.doi.org/10.1007/978-94-011-5506-9_34.

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6

Vallabhaneni, Manikantha, Sreenidhi Balki, P. S. V. N. K. Mani Gupta, and Sonali Agrawal. "Power-Efficient Bulk-Driven MCML D-Latch for High-Frequency Applications." In Proceedings of Third International Conference on Communication, Computing and Electronics Systems, 749–60. Singapore: Springer Singapore, 2022. http://dx.doi.org/10.1007/978-981-16-8862-1_49.

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7

Cordier, Yvon, Rémi Comyn, and Eric Frayssinet. "Molecular Beam Epitaxy of AlGaN/GaN High Electron Mobility Transistor Heterostructures for High Power and High-Frequency Applications." In Low Power Semiconductor Devices and Processes for Emerging Applications in Communications, Computing, and Sensing, 201–23. Boca Raton : Taylor & Francis, a CRC title, part of the Taylor &: CRC Press, 2018. http://dx.doi.org/10.1201/9780429503634-9.

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8

Maheswari, Y. Uma, A. Amudha, and L. Ashok Kumar. "Effect of EMI on Electrical and Electronic System and Mitigation Methods for Low- and High-Frequency Applications." In Energy Audit and Management, 181–209. Boca Raton: CRC Press, 2022. http://dx.doi.org/10.1201/9781003203810-6.

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Redgment, P. G. "High-Frequency Direction Finding in the Royal Navy: Development of Anti-U-Boat Equipment, 1941–5." In The Applications of Radar and other Electronic Systems in the Royal Navy in World War 2, 229–65. London: Palgrave Macmillan UK, 1995. http://dx.doi.org/10.1007/978-1-349-13623-0_6.

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Ghosh, Monisha, and Arindam Biswas. "Applications of Si~3C-SiC Heterostructures in High-Frequency Electronics up to the Terahertz Spectrum." In Lecture Notes in Electrical Engineering, 239–50. Singapore: Springer Singapore, 2021. http://dx.doi.org/10.1007/978-981-16-4947-9_16.

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Тези доповідей конференцій з теми "High frequency electronic applications"

1

Vanisri, T. "The opto-electronic high-frequency transconductor and circuit applications." In IEE Colloquium on `The RF Design Scene'. IEE, 1996. http://dx.doi.org/10.1049/ic:19960170.

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2

Sato, Junya, Shin Teraki, Masaki Yoshida, and Hisao Kondo. "High Performance Insulating Adhesive Film for High-Frequency Applications." In 2017 IEEE 67th Electronic Components and Technology Conference (ECTC). IEEE, 2017. http://dx.doi.org/10.1109/ectc.2017.94.

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3

Theuss, H., R. Weigel, J. Dangelmaier, M. Engl, K. Pressel, H. Knapp, W. Simburger, K. Gnannt, W. Eurskens, and J. Hirtreiter. "A leadless packaging concept for high frequency applications." In 2004 Proceedings. 54th Electronic Components and Technology Conference. IEEE, 2004. http://dx.doi.org/10.1109/ectc.2004.1320371.

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4

Raj, P. Markondeya, Himani Sharma, G. Prashant Reddy, Nevin Altunyurt, Madhavan Swaminathan, Rao Tummala, Vijay Nair, and David Reid. "Novel nanomagnetic materials for high-frequency RF applications." In 2011 IEEE 61st Electronic Components and Technology Conference (ECTC). IEEE, 2011. http://dx.doi.org/10.1109/ectc.2011.5898670.

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5

Kim, Taeeui, Christian Romero, KyungO Kim, Taesung Jung, and Sung Yi. "Embedded filter's temperature effect analysis for high frequency applications." In 2008 International Conference on Electronic Materials and Packaging (EMAP). IEEE, 2008. http://dx.doi.org/10.1109/emap.2008.4784263.

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6

Kraft, J., G. Meinhardt, K. Molnar, T. Bodner, and F. Schrank. "Electrical and Optical TSVs for High Frequency Photonic Applications." In 2016 IEEE 66th Electronic Components and Technology Conference (ECTC). IEEE, 2016. http://dx.doi.org/10.1109/ectc.2016.188.

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7

Jong-Woong Kim, Young-Chul Lee, Jae-Hoon Ko, Wansoo Nah, and Seung-Boo Jung. "Transmission property of adhesive interconnect for high frequency applications." In 2007 International Conference on Electronic Materials and Packaging (EMAP 2007). IEEE, 2007. http://dx.doi.org/10.1109/emap.2007.4510286.

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8

Ogawa, N., H. Onozeki, T. Tanabe, and T. Kumakura. "Profile-Free Copper Foil for High-Density Packaging Substrates and High-Frequency Applications." In 2005 Proceedings. 55th Electronic Components and Technology Conference. IEEE, 2005. http://dx.doi.org/10.1109/ectc.2005.1441305.

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9

"Tape Automated Bonding Packages: Electrical Considerations For High Frequency Applications." In Proceedings of Japan International Electronic Manufacturing Technology Symposium. IEEE, 1993. http://dx.doi.org/10.1109/iemt.1993.639798.

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10

Lee, Tzu Nien, John H. Lau, Cheng-Ta Ko, Tim Xia, Eagle Lin, Kai-Ming Yang, Puru Bruce Lin, et al. "Characterization of Low Loss Dielectric Materials for High-Speed and High-Frequency Applications." In 2022 IEEE 72nd Electronic Components and Technology Conference (ECTC). IEEE, 2022. http://dx.doi.org/10.1109/ectc51906.2022.00351.

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Звіти організацій з теми "High frequency electronic applications"

1

van der Heijden, Joost. Optimizing electron temperature in quantum dot devices. QDevil ApS, March 2021. http://dx.doi.org/10.53109/ypdh3824.

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Анотація:
The performance and accuracy of quantum electronics is substantially degraded when the temperature of the electrons in the devices is too high. The electron temperature can be reduced with appropriate thermal anchoring and by filtering both the low frequency and radio frequency noise. Ultimately, for high performance filters the electron temperature can approach the phonon temperature (as measured by resistive thermometers) in a dilution refrigerator. In this application note, the method for measuring the electron temperature in a typical quantum electronics device using Coulomb blockade thermometry is described. This technique is applied to find the readily achievable electron temperature in the device when using the QFilter provided by QDevil. With our thermometry measurements, using a single GaAs/AlGaAs quantum dot in an optimized experimental setup, we determined an electron temperature of 28 ± 2 milli-Kelvin for a dilution refrigerator base temperature of 18 milli-Kelvin.
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2

Antonsen, T. M. Jr, W. W. Destler, V. Granatstein, and B. Levush. Microwave generation for magnetic fusion energy applications. Task A, Free electron lasers with small period wigglers; Task B, Theory and modeling of high frequency, high power gyrotron operation: Progress report, May 1, 1993--May 1, 1994. Office of Scientific and Technical Information (OSTI), May 1994. http://dx.doi.org/10.2172/10151962.

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3

Armendariz, M. G., G. R. Hadley, and M. E. Warren. Advanced packaging technology for high frequency photonic applications. Office of Scientific and Technical Information (OSTI), March 1996. http://dx.doi.org/10.2172/211590.

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4

Archambeau, C. Applications of discrimination methods to high frequency seismic data. Office of Scientific and Technical Information (OSTI), May 1989. http://dx.doi.org/10.2172/7245131.

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5

BACA, ALBERT G., RONALD D. BRIGGS, ANDREW A. ALLERMAN, CHRISTINE C. MITCHELL, ARTHUR J. FISCHER, CAROL I. ASHBY, ALAN F. WRIGHT, and RANDY J. SHUL. High Al-Content AlInGaN Devices for Next Generation Electronic and Optoelectronic Applications. Office of Scientific and Technical Information (OSTI), December 2001. http://dx.doi.org/10.2172/789599.

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6

Schmitt, R. L., R. J. Williams, and J. D. Matthews. High-frequency scannerless imaging laser radar for industrial inspection and measurement applications. Office of Scientific and Technical Information (OSTI), November 1996. http://dx.doi.org/10.2172/419074.

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7

Jakaboski, Blake Elaine, Chung-Nin Channy Wong, Dale L. Huber, Michael J. Rightley, and John Allen Emerson. Advancement in thermal interface materials for future high-performance electronic applications. Part 1. Office of Scientific and Technical Information (OSTI), February 2006. http://dx.doi.org/10.2172/902216.

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8

Barbee, T. W. Jr, and G. W. Johnson. High energy density capacitors for power electronic applications using nano-structure multilayer technology. Office of Scientific and Technical Information (OSTI), September 1995. http://dx.doi.org/10.2172/258017.

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9

Givot, Brad, Justin Johnson, Sung Kim, Luke E. Schallinger, and James Baker-Jarvis. Characterization of tissue-equivalent materials for high-frequency applications (200 MHz to 20 GHz). Gaithersburg, MD: National Bureau of Standards, 2010. http://dx.doi.org/10.6028/nist.tn.1554.

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10

Lyo, Sungkwun Kenneth, Wei Pan, John Louis Reno, Joel Robert Wendt, and Daniel Lee Barton. LDRD final report on Bloch Oscillations in two-dimensional nanostructure arrays for high frequency applications. Office of Scientific and Technical Information (OSTI), September 2008. http://dx.doi.org/10.2172/948689.

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