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Статті в журналах з теми "He thin film"
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Cieslikowski, D., P. Leiderer, and A. J. Dahm. "Mobility oscillations of electrons on thin He films." Canadian Journal of Physics 65, no. 11 (November 1, 1987): 1525–31. http://dx.doi.org/10.1139/p87-243.
Повний текст джерелаАнотація:
We have studied electrons above liquid films of 3He and 4He condensed on various solid substrates. For helium films on solid hydrogen, pronounced oscillations of the electron mobility are observed as the film thickness is changed. The oscillations are related to the formation of layers of the liquid close to the wall. Our results indicate substantial layering of the films up to nearly 10 atomic distances.
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MILLER, M. D., and E. KROTSCHECK. "THEORY OF THIRD SOUND AND STABILITY OF THIN 3He–4He SUPERFLUID FILMS." International Journal of Modern Physics B 21, no. 13n14 (May 30, 2007): 2091–102. http://dx.doi.org/10.1142/s021797920704349x.
Повний текст джерелаАнотація:
In this paper, we summarize the results of recent studies of third sound in thin, superfluid 3 He -4 He mixture films and the relation of the third sound spectrum to the question of the films' thermodynamic stability. We have considered films on several representative substrates: Nuclepore, glass, Li and Na . Our approach utilizes the variational, hypernetted chain/Euler-Lagrange (HNC–EL) theory as applied to inhomogeneous boson systems to calculate chemical potentials for both the 4 He superfluid film and the physisorbed 3 He . Numerical density derivatives of the chemical potentials lead to the sought-after third sound speeds. On all substrates, the third sound speeds show a series of oscillations as a function of film coverage that is driven by the layered structure of the 4 He film. We find that the effect on the third sound response of adding a small amount of 3 He to the 4 He film can depend sensitively on the particular 4 He film coverage. The third sound speed can either increase or decrease. In fact, in some regimes, the added 3 He destabilizes the film and can drive "layering transitions" leading to quite complicated geometric structures of the film in which the outermost layer consists of phase–separated regimes of 3 He and 4 He . Finally, we examine the range of applicability of the usual film–averaged hydrodynamic description. We find that at least up to film thicknesses of six liquid layers, there is no regime in which this hydrodynamic description is applicable.
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KROTSCHECK, E., and M. D. MILLER. "GENERIC ELECTRON MOBILITY IN SURFACE STATES ON HELIUM FILMS." International Journal of Modern Physics B 21, no. 13n14 (May 30, 2007): 2103–14. http://dx.doi.org/10.1142/s0217979207043506.
Повний текст джерелаАнотація:
We study the mobility of electrons adsorbed to thin 4 He films. Utilizing the time-dependent version of the Euler-Lagrange, hypernetted chain variational theory, we compute the inelastic scattering rate of an electron due to collisions with film excitations (third sound). We obtain an analytic result valid in the long wavelength limit. In agreement with experiment, the mobility shows oscillations due to the underlying transverse film structure. The oscillations are explicitly due to the appearance of the third sound speed in the scattering rate since the third sound speed itself oscillates in conjunction with the 4 He film structure. The mobilities tend to be higher than reported mobilities on thin films, which we attribute to substrate structure. We interpret our results as generic mobilities that are valid in the limit of perfectly smooth, structureless substrates.
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Stanford, Michael G., Joo Hyon Noh, Kyle Mahady, Anton V. Ievlev, Peter Maksymovych, Olga S. Ovchinnikova, and Philip D. Rack. "Room-Temperature Activation of InGaZnO Thin-Film Transistors via He+ Irradiation." ACS Applied Materials & Interfaces 9, no. 40 (September 28, 2017): 35125–32. http://dx.doi.org/10.1021/acsami.7b10449.
Повний текст джерела
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Kurokawa, Mao, Takao Shimizu, Mutsuo Uehara, Atsuo Katagiri, Kensuke Akiyama, Masaaki Matsushima, Hiroshi Uchida, Yoshisato Kimura, and Hiroshi Funakubo. "Control ofp- andn-type Conduction in Thermoelectric Non-doped Mg2Si Thin Films Prepared by Sputtering Method." MRS Advances 3, no. 24 (2018): 1355–59. http://dx.doi.org/10.1557/adv.2018.150.
Повний текст джерелаАнотація:
ABSTRACTA method for controlling the conduction-type in Mg2Si films without doping is investigated. Mg2Si films exhibit p-type conduction after a post-heat treatment up to 500 °C in atmospheric He. However, covering the films with Mg ribbon during a subsequent heat treatment at 500 °C converts the conduction to n-type, demonstrating that the heat treatment atmosphere can control the conduction type. Based on the reported first principles calculations suggesting that interstitial Mg and Mg vacancies in Mg2Si are the origins of n-type and p-type conduction, respectively, the post-heat treatment in He induces Mg vacancies due to the evaporation of Mg from the film, resulting in p-type conduction. The subsequent heat treatment when the film is covered with Mg ribbon fills the Mg vacancies and the additional interstitial Mg is incorporated, resulting in n-type conduction. These observations differ from the reported data for heat treatment of stable n-type conduction in non-doped Mg2Si-sintered bodies and may realize a novel control method for the conduction type in Mg2Si films.
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UEMURA, Y. J. "WHAT CAN WE LEARN FROM COMPARISON BETWEEN CUPRATES AND HE FILMS?: PHASE SEPARATION AND FLUCTUATING SUPERFLUIDITY." International Journal of Modern Physics B 14, no. 29n31 (December 20, 2000): 3703–10. http://dx.doi.org/10.1142/s0217979200004258.
Повний текст джерелаАнотація:
In the underdoped, overdoped, Zn-doped or stripe-forming regions of high-Tc cuprate superconductors (HTSC), the superfluid density ns/m* at T→ 0 shows universal correlations with Tc. Similar strong correlations exist between 2-dimensional superfluid density and superfluid transition temperature in thin films of 4 He in non-porous or porous media, and 4 He /3 He film adsorbed on porous media. Based on analogy between HTSC and He film systems, we propose a model for cuprates where: (1) the overdoped region is characterized by a phase separation similar to 4 He /3 He ; and (2) pair (boson) formation and fluctuating superconductivity occur at separate temperatures above Tc in the underdoped region.
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Miyaguchi, Kazuya, Shin Kajita, Hirohiko Tanaka, and Noriyasu Ohno. "Fabrication of nanostructured Ti thin film with Ti deposition in He plasmas." Japanese Journal of Applied Physics 60, no. 3 (February 19, 2021): 038004. http://dx.doi.org/10.35848/1347-4065/abe3a5.
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El Hog, Sahbi, and H. T. Diep. "Tricriticality of the Blume–Emery–Griffiths model in thin films of stacked triangular lattices." Modern Physics Letters B 30, no. 07 (March 20, 2016): 1650071. http://dx.doi.org/10.1142/s0217984916500718.
Повний текст джерелаАнотація:
We study in this paper the Blume–Emery–Griffiths model in a thin film of stacked triangular lattices. The model is described by three parameters: bilinear exchange interaction between spins [Formula: see text], quadratic exchange interaction [Formula: see text] and single-ion anisotropy [Formula: see text]. The spin [Formula: see text] at the lattice site [Formula: see text] takes three values [Formula: see text]. This model can describe the mixing phase of He-4 [Formula: see text] and He-3 [Formula: see text] at low temperatures. Using Monte Carlo simulations, we show that there exists a critical value of [Formula: see text] below (above) which the transition is of second-(first-)order. In general, the temperature dependence of the concentrations of He-3 is different from layer by layer. At a finite temperature in the superfluid phase, the film surface shows a deficit of He-4 with respect to interior layers. However, effects of surface interaction parameters can reverse this situation. Effects of the film thickness on physical properties will be also shown as functions of temperature.
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Lee, Baek-Ju, Yoo-Seong Kim, Dong-Won Seo, and Jae-Wook Choi. "The Effect of Deposition Temperature of TiN Thin Film Deposition Using Thermal Atomic Layer Deposition." Coatings 13, no. 1 (January 5, 2023): 104. http://dx.doi.org/10.3390/coatings13010104.
Повний текст джерелаАнотація:
In this study, the effect of deposition temperature of TiN thin films deposited using the thermal atomic layer deposition (ALD) method was investigated. TiCl4 precursor and NH3 reactive gas were used, and the deposition rate, resistivity change, and surface morphology characteristics were compared in the deposition temperature range of 400 °C–600°C. While resistivity decreased to 177 µΩcm as the deposition temperature increased to 600 °C, an increase in surface roughness (Rq) to 0.69 nm and a deterioration in the step coverage were identified. In order to obtain a high-quality TiN thin film with excellent resistivity and step coverage characteristics even at low deposition temperatures, the TiN thin film was post-treated with plasma in a combination of N2/He gas ratio of 3:2 to confirm the change in resistivity. X-ray diffraction analysis confirmed crystallization change in the TiN thin film caused by plasma energy. As a result, the resistivity of the TiN thin film deposited at 400 °C was confirmed to be lowered by about 25%.
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Xiang, Xuepeng, Jingjing Rao, Zuyun He, Mengzhen Zhou, Qicheng Huang, Yuan Gao, Zhen Fan, Xinwei Wang, and Yan Chen. "Tailoring resistive switching in epitaxial SrCoO2.5 films by irradiation induced uniaxial strain." Journal of Applied Physics 132, no. 3 (July 21, 2022): 035304. http://dx.doi.org/10.1063/5.0099200.
Повний текст джерелаАнотація:
Strain engineering has been widely applied to tune the performance of oxide thin film based devices. To precisely regulate the strain state of the thin film, nevertheless, still remains a challenging task. Herein, we demonstrate that the uniaxial strain along the c-axis of epitaxial SrCoO2.5 (SCO) (001) thin film can be continuously controlled by low-energy helium (He) irradiation (5 keV), leading to noticeable enhancement in resistive switching (RS) performance. All the irradiated SCO thin films exhibit out-of-plane tensile strain due to the implanted He interstitials in the lattice, and the strain increases linearly from 0.447% to 2.785% as the ion fluence increases from 1 × 1014 to 1 × 1015 ion/cm2. Although all the irradiated SCO-based devices follow similar conductive filaments mechanism as the pristine device, the performance shows a volcano shape dependence on the irradiation fluence. The device subjected to irradiation of 1 × 1014 ion/cm2 shows the optimal performance with the highest ON/OFF ratio and good endurance. Such dependence of RS behavior on irradiation-induced uniaxial strain is attributed to the widely observed nonlinear dependence of oxygen migration on the elastic tensile strain. Our results provide an effective strategy to regulate the strain states and the correlating functionality of oxide thin films.
Дисертації з теми "He thin film"
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He, Chuan [Verfasser]. "Ultrafast Dynamics of Coherent Phonons in Thin Films and Free-Standing Membranes / Chuan He." Konstanz : Bibliothek der Universität Konstanz, 2015. http://d-nb.info/1110772351/34.
Повний текст джерела
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Martirosyan, Vahagn. "Atomistic simulations of H2 and He plasmas modification of thin-films materials for advanced etch processes." Thesis, Université Grenoble Alpes (ComUE), 2017. http://www.theses.fr/2017GREAT101/document.
Повний текст джерелаАнотація:
Ce travail de thèse aborde l’un des défis technologiques liés au développement de nouvelles générations de transistors (FinFET, FDSOI), pour lesquels la gravure de couches ultraminces révèle plusieurs problèmes. En particulier, la gravure des espaceurs nitrure (SiN) doit être réalisée avec une précision nanométrique sans endommager les couches sous-jacentes, étape qui ne peut plus être réalisée par des plasmas conventionnels continus. Afin de dépasser cette limitation, une approche innovante a été récemment développée (dite Smart-Etch), qui s’appuie sur l'implantation d’ions légers et se déroule en deux étapes. Premièrement, le matériau à graver est exposé à un plasma ICP ou CCP d’hydrogène (H2) ou d’hélium (He); dans une deuxième étape, la couche modifiée est retirée sélectivement par gravure humide ou exposition à des réactifs gazeux. Afin d’appréhender les mécanismes fondamentaux de la première étape et assister le développement de cette nouvelle technologie, des simulations de dynamique moléculaire (MD) ont été réalisées pour étudier l'interaction des plasmas H2/He avec des couches de Si/SiN. La MD a été utilisée pour examiner comment la modification de ces substrats est affectée par l’énergie ionique, la dose ionique, la composition ionique ou le rapport flux de radicaux/ flux d’ions (dans le cas d’un plasma H2). En accord avec les expériences, les simulations de bombardement ionique He+ ou Hx+ (x = 1-3) sur Si/SiN montrent que l’implantation ionique est auto-limitée, et que l’évolution de la surface se déroule en deux étapes : une rapide modification en volume (sans gravure) suivie d'une saturation lente et de la formation d'une couche implantée stable en régime permanent (état stationnaire). Les mécanismes d'endommagement induit par les ions (rupture des liaisons Si-Si ou Si-N, piégeage/désorption d’He ou H2, formation de groupes SiHx (x = 1-3) en profondeur), sont étudiés et permettent d’apporter de nouveaux éléments de compréhension aux technologies Smart-Cut et Smart-Etch. L’exposition de substrats Si/SiN à un plasma H2 (impacts d’ions Hx+ et de radicaux H) a également été étudiée pour différentes conditions plasma. Dans ce cas, une transformation auto-limitée est observée mais les couches modifiées/hydrogénées sont simultanément gravées pendant l'implantation ionique, à un taux 10 fois inférieur pour SiN par rapport à Si. Les simulations montrent que modifier des substrats Si/SiN avec une précision nanométrique nécessite un contrôle prudent de l’énergie et du flux des ions incidents. En particulier, les faibles doses ioniques doivent être évitées car l’évolution de la surface ne peut pas être contrôlée précisément en régime transitoire (modification rapide). Dans les plasmas H2, les énergies ioniques élevées induisent des couches modifiées plus épaisses mais des taux d'hydrogénation plus faibles et moins homogènes. La composition ionique et le rapport flux de radicaux/ flux ions (Γ) doivent également être controllés avec précaution, notamment car la vitesse de gravure du matériau augmente avec Γ, ce qui empêche entre-autre la possibilité du Smart-Etch pour le silicium. Les simulations MD réalisées dans cette thèse permettent de clarifier divers phénomènes inexpliqués observés dans le Smart-Etch expérimentalement, et de révéler quelques problèmes possibles dans ce nouveau procédé. Finalement, une gamme de paramètres plasma est proposée pour optimiser cette première étape de Smart-Etch et contrôler la modification de SiN avec une précision sous-nanométriqueThis PhD thesis focuses on technological challenges related to the development of advanced transistors (FinFET, FDSOI), where the etching of thin films reveals several issues. In particular, the etching of silicon nitride spacers should be achieved with a nanoscale precision without damaging the underlayers, a step which cannot be addressed by conventional CW plasmas. To overpass this limitation, an innovative approach was recently developed (so-called Smart Etch), which is based on light ion implantation and composed of two steps. First, the material to be etched is modified by exposure to a hydrogen (H2) or helium (He) ICP or CCP plasma; in a second step, the modified layer is selectively removed using wet etching or gaseous reactants only. To support the fundamental understanding of the first step and assist the development of this new technology, molecular dynamics (MD) simulations were performed to study the interaction between silicon/silicon nitride films and hydrogen/helium plasmas. MD was used to investigate how the substrates modification is affected by the ion energy, the ion dose, the ion composition or the radical-to-ion flux ratio (in the case of a H2 plasma). In agreement with experiments, simulations of He+ or Hx+ (x=1-3) ion bombardment of Si/SiN show that a self-limited ion implantation takes place with a surface evolution composed of two stages: a rapid volume modification (with no etching) followed by a slow saturation and the formation of a stable He- or H- implanted layer at steady state. The mechanisms of ion-induced damage (Si-Si or Si-N bond breaking, He or H2 trapping/desorption, SiHx (x=1-3) complex creation) are investigated and allow to bring new insights to both the Smart Cut and Smart Etch technologies. Si/SiN exposure to various H2 plasma conditions (with both Hx+ ions and H radicals) was then studied. In this case, a self-limited transformation is observed but the H-modified layers are simultaneously etched during the ion implantation, at a rate ~10 times smaller for SiN compared to Si. Simulations show that to modify Si/SiN thin films with a nanoscale precision by H2 or He plasmas, both the ion energy and the ion flux have to be controlled very cautiously. In particular, low ion doses, where the substrate evolution is in rapid modification stage, must be avoided since the substrate evolution cannot be precisely controlled. In H2 plasmas, high ion energies induce thicker modified layers but smaller and less homogeneous hydrogenation rates. The ion composition and the radical-to-ion flux ratio Γ must be considered as well, since the etch rate increases with Γ, compromising even the possibility to achieve a Smart Etch of silicon. The MD simulations performed in this thesis enable to clarify various unexplained phenomena seen in the Smart-Etch experimentally, and reveal some possible issues in this new process. In the end, a range for plasma parameters is proposed to optimize this first step of the Smart Etch process and to control the modification of SiN with a sub-nanoscale precision
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Kasaei, Leila. "Modification of Iron pnictide and MgB2 thin films using focused He+ ion beam irradiation for superconducting devices." Diss., Temple University Libraries, 2019. http://cdm16002.contentdm.oclc.org/cdm/ref/collection/p245801coll10/id/585476.
Повний текст джерелаАнотація:
PhysicsPh.D.
Continued pursuit of better superconducting devices and an understanding of how the focused ion beam evolves in a complex material are the primary motivations behind this work. The materials of interest are MgB2 and Co-doped Ba122. Superconducting properties of MgB2 were discovered in 2001. It is the first superconductor recognized as a multigap superconductor. Owing to its high Tc of ~39K, electronic circuits based on this material are expected to operate at a much higher temperature (~25 K) than low-temperature superconductors, using compact cryocoolers. Co-doped Ba122 is also a multigap superconductor which belongs to Fe-based superconductor (FeSC) family. The undoped Ba122 compound is a metal exhibiting antiferromagnetism which coexists with superconducting phase up to a certain doping level. The optimally electron-doped BaFe2As2 exhibits the transition temperature Tc of ~21 K which corresponds to the top of the “dome” in the phase diagram. While the Fe-based SC may not signify a particular advance in terms of practical applications, many unique aspects make them worth studying. In particular, the superconducting gap symmetry and structures which appear to be quite different from family to family and not yet fully understood. We report on investigating the normal-state, and superconducting properties of Co-doped BaFe2As2 and MgB2 thin films irradiated at room temperature using a 30-keV focused He+ ion beam in helium ion microscope (HIM). R-T measurement was carried out to extract the dose dependence for Tc and resistivity p0 of the irradiated region. We observed an increase in p0 and a decrease in Tc down to complete suppression of superconductivity for both materials, although the trend of the changes was quite different. In addition, for Ba122, the data for ΔTc ⁄ Tc0 versus measured change in resistivity favors s± over s++ symmetry. Using TRIM software, the projected range and the damage density distribution of the He+ ions were tracked in the samples. Single track irradiation sites for MgB2 sample were characterized using FIB extraction/TEM. The TEM micrographs reveal the subsurface damage density contours that evolve with increasing dose. The Josephson effect is a unique phenomenon that gives direct access to the phase difference 𝜑 of the macroscopic wave functions that describe the superconducting state. Josephson junction is also appealing for engineering application in superconducting electronics. Having found the dose at which complete suppression of Tc occurs from the first part of the study, a fabrication process was developed to produce planar Josephson junctions from MgB2 and Co-doped Ba122. The Josephson coupling across the barrier for both materials was observed. MgB2 Josephson junctions showed resistivity shunted junction (RSJ) I-V curve with excellent uniformity and reproducibility. We have also demonstrated tens of planar MgB2 Josephson junctions operating coherently in series arrays. 60 Josephson junction series arrays successfully developed with less than 4% spread in critical current at 12 K. Under microwave radiation, flat giant Shapiro steps up to 150 μA width appear at voltages Vn=NnΦ0f, where N is the number of junction in the array, 𝑛 is an integer representing Shapiro step index, and f is the applied microwave frequency. The uniformity and close spacing of JJs in the arrays are significantly better than MgB2 multi-junction devices made by other techniques. It has been a huge success in showing the feasibility of this technology for pursuing superconducting digital electronics, Josephson voltage standards and arbitrary function generators in particular, in MgB2 with ≥ 20K operating temperature.
Temple University--Theses
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He, Guping [Verfasser], Brigitte [Akademischer Betreuer] Voit, and Christine [Akademischer Betreuer] Papadakis. "The Effect of Modified AuNPs on the Morphology and Nanostructure Orientation of PPMA-b-PMMA Block Copolymer Thin Films / Guping He. Gutachter: Brigitte Voit ; Christine Papadakis. Betreuer: Brigitte Voit." Dresden : Saechsische Landesbibliothek- Staats- und Universitaetsbibliothek Dresden, 2014. http://d-nb.info/1068448865/34.
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Rath, Pranaya Kishore. "Experimental Investigation of Electrons In and Above Liquid Helium." Thesis, 2022. https://etd.iisc.ac.in/handle/2005/5838.
Повний текст джерелаАнотація:
Electrons on the surface of liquid helium form a nearly ideal 2-dimensional electron system (2DES). An electron density up to 2 × 10^9 cm-2, known as the critical electron density, can be achieved on the liquid helium surface, above which an electro-hydrodynamic (EHD) instability sets in, which results in the formation of MEBs. Due to this limitation in maximum possible density, only the classical liquid and solid phases of the 2DES can be accessed in this system.
But at the same time, on the surface of thin liquid helium film and with the multi-electron bubbles (MEBs), it may be possible to achieve high electron density than that of the critical electron density. This can allow the observation of quantum melting, i.e., the phase transition between the quantum solid to the liquid phase of the 2DES. Although extensive theoretical and experimental studies have already been done, the quantum melting transition has not been
achieved experimentally on these systems yet. In this thesis, we have used multiple new experimental approaches to obtain electron densities higher than what has been achieved before and to study the MEBs effectively.
First, we studied the temporal dynamics of the EHD instability and the effect of the applied electric field and charge density on the instability. The unstable wave vectors were determined experimentally, and their temporal growth was studied carefully. The determined unstable wave vectors were found to be a good match with the theoretically expected values obtained from the dispersion relation. At the same time, the analysis of the growth rate of unstable
vectors were found to be limited by the kinematic viscosity of the liquid helium.
Next, we investigated the lifetime of MEBs trapped on a dielectric surface and compared the result with previous results on free bubbles in bulk liquid helium. The reduced lifetime of trapped bubbles suggested an impact of convective heat flow around the bubbles on their lifetimes. Then we performed an experimental investigation that confirmed the effect of
convective heat flow direction inside the experimental cell on the lifetime of such trapped MEBs. Determination of the electronic phase inside an MEB is one of the biggest challenges of the time. Unfortunately, there is no direct way or technique for such investigation. We discussed how the MEB surface fluctuation with an external oscillating electric field could be observed, which may allow a possible way of studying the phase of the 2DES. We studied the surface fluctuations of electrically excited MEBs and observed different normal mechanical modes of the bubble wall. Then we extended our discussion on why liquid helium-4 is not a suitable medium to study the MEBs at low temperatures (below λ), where interesting phenomena occur, and how liquid helium-3, based on its physical property, can be a suitable replacement for this purpose. We generated MEBs inside liquid helium for the first time. The generated MEBs at 1.1 K were found to be stable with long lifetimes. This result opens the possibility of studying the MEBs at much lower temperatures where quantum properties dominate over classical for the 2DES.
Finally, we discussed the problem associated with achieving high electron density on the thin helium film and how integrating an NEA material as a substrate can help us overcome the problem. We fabricated NEA materials, i.e., cBN pellet, and optimized the rf sputtering deposition of cBN film. We performed a preliminary pick-up measurement on the charged thin helium with these materials as substrates, which showed some positive indications that need to
be confirmed with further advanced experimental investigations.INSPIRE, DST India
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Chang, Wei-teng, and 張巍騰. "he study on the magnetism of Diluted Magnetic Semiconductor ZnMnO thin films." Thesis, 2006. http://ndltd.ncl.edu.tw/handle/15395646358646444736.
Повний текст джерелаАнотація:
碩士義守大學
材料科學與工程學系碩士班
94
Abstract This experiment, employing the radio-frequency (rf) magnetron sputtering method to deposit the ZnO thin films doping by manganese (6at%~20at%) as well as the ZnO thin films co-doping by magnesium (10at%), phosphorous (1at%) and manganese (2at%~10at%) on corning glass 1737, is mainly categorized into three parts. The first part concerns the crystal structure and microstructure. The second part explores the optical properties and the third part investigates the magnetic properties. From the experiment result, we observe that the second phase appears in the thin films of ZnO doped by manganese when the manganese content is 10at%. The band gap increases from 3.25eV to 2.64eV when the manganese content is from 6at% to 20at%. Regarding the magnetic characteristics, we find that the ferromagnetism appears in all thin films at room temperature and there exists maximum saturated magnetization when the manganese content is 15at%. From the experiment result of the ZnO thin films co-doped by magnesium, phosphorous, and manganese, the band gap increases from 3.43eV to 3.29eV when the manganese content is from 2at% to 10at%, moreover, it shows the ferromagnetic features at low temperature (10K) and room temperature. In this experiment, we observe ferromagnetism from both kinds of thin films, we can not find out the Mn3O4 phase from the TEM (Transmission Electron Microscope) analysis. The main cause of the ferromagnetism is due to the Mn2O3 phase.
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He, Yunbin [Verfasser]. "CuInS2 thin films for photovoltaic : RF reactive sputter deposition and characterization / von Yunbin He." 2006. http://d-nb.info/981580297/34.
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Lin, Hsiu-Chi, and 林秀錡. "The characteristics of SiH4-H2 plasma with additional He, Ne, Ar gases and their effects on the resultant properties of nc-Si:H thin films." Thesis, 2015. http://ndltd.ncl.edu.tw/handle/em2hmr.
Повний текст джерелаАнотація:
碩士明志科技大學
材料工程系碩士班
104
In this study, hydrogenated nanocrystalline silicon (nc-Si:H) films were prepared using ICP-CVD system attached with four internal U-shaped low inductance antennas. Ar, He, and Ne gases were introduced into SiH4/H2 plasma during deposition, with the variation of gas flow rate and SiH4/H2 ratios. During deposition, an OES (optical emission spectrometer) and a plasma probe were used to characterize the conditions of plasma. The crystalllinity, structure, and Si-H bonding of these Si:H films were investigated using Raman scattering spectroscopy, XRD, and FTIR. The correlations of plasma characteristics and thin film properties were studied. It is found that the crystallinity of nc-Si:H film increases with the introduction of Ar, He, and Ne gases, especially when Ar is added. The plasma density and IH* increase with the increase of the inert gases, most likely due to penning ionization effect. The deposition rate decreases with the inert gases. This might be caused by the enhancement of hydrogen etching.
Книги з теми "He thin film"
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Bo mo tai yang dian chi guan jian ke xue he ji shu: Key science and technology of thin film solar cells. Shanghai: Shanghai ke xue ji shu chu ban she, 2013.
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Herzogenrath, Bernd, ed. The Films of Bill Morrison. NL Amsterdam: Amsterdam University Press, 2017. http://dx.doi.org/10.5117/9789089649966.
Повний текст джерелаАнотація:
Avant-garde filmmaker Bill Morrison has been making films that combine archival footage and contemporary music for decades, and he has recently begun to receive substantial recognition: he was the subject of a retrospective at the Museum of Modern Art, and his 2002 film Decasia was selected for the National Film Registry by the Library of Congress. This is the first book-length study of Morrison's work, covering the whole of his career. It gathers specialists throughout film studies to explore Morrison's "aesthetics of the archive"-his creative play with archival footage and his focus on the materiality of the medium of film.
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Tröhler, Margrit, and Guido Kirsten, eds. Christian Metz and the Codes of Cinema. NL Amsterdam: Amsterdam University Press, 2018. http://dx.doi.org/10.5117/9789089648921.
Повний текст джерелаАнотація:
A pioneering figure in film studies, Christian Metz proposed countless new concepts for reflecting on cinema, rooted in his phenomenological structuralism. He also played a key role in establishing film studies as a scholarly discipline, making major contributions to its institutionalisation in universities worldwide. This book brings together a stellar roster of contributors to present a close analysis of Metz's writings, their theoretical and epistemological positions, and their ongoing influence today.
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Buckland, Warren, and Daniel Fairfax, eds. Conversations with Christian Metz. NL Amsterdam: Amsterdam University Press, 2017. http://dx.doi.org/10.5117/9789089648259.
Повний текст джерелаАнотація:
From 1968 to 1991 the acclaimed film theorist Christian Metz wrote several remarkable books on film theory: Essais sur la signifi cation au cinéma, tome1 et 2; Langage et cinéma; Le signifiant imaginaire; and L’Enonciation impersonnelle. These books set the agenda of academic film studies during its formative period. Metz’s ideas were taken up, digested, refined,reinterpreted, criticized and sometimes dismissed, but rarely ignored. This volume collects and translates into English for the first time a series of interviews with Metz, who offers readable summaries,elaborations, and explanations of his sometimes complex and demanding theories of film. He speaks informally of the most fundamental concepts that constitute the heart of film theory as an academic discipline — concepts borrowed from linguistics, semiotics, rhetoric, narratology, and psychoanalysis. Within the colloquial language of the interview, we witness Metz’s initial formation and development of his film theory. The interviewers act as curious readers who pose probing questions to Metz about his books, and seek clarification and elaboration of his key concepts. We also discover the contents of his unpublished manuscript on jokes, his relation to Roland Barthes, and the social networks operative in the French intellectual community during the 1970s and 1980s.
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Pollack, Howard. Film Work. Oxford University Press, 2017. http://dx.doi.org/10.1093/oso/9780190458294.003.0015.
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Latouche had a side career in film. This included writing songs for two avant-garde films by Hans Richter, Dreams That Money Can Buy and 8 x 8. He also wrote the narration for a Herbert Matter film about Alexander Calder, and began his own film company, Aries Productions, which produced Maya Deren’s last completed film, The Very Eye of Night, and an animated film based on his poem “The Peppermint Tree.” In one instance, he started to direct his own short, Presenting Jane, in conjunction with his friendship with the New York poets, but the film was never completed.
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Fisher, Jaimey. Interview with Christian Petzold. University of Illinois Press, 2017. http://dx.doi.org/10.5406/illinois/9780252037986.003.0002.
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This chapter presents an interview with Christian Petzold, which mainly took place in July 2011, with a shorter followup in October 2012, at Petzold's office in Berlin. Topics covered include where Petzold grew up; the first film he can remember seeing in a movie theater; the atmosphere in Berlin when he arrived to study literature; his decision to transfer to the German Film and Television Academy in Berlin; his collaborations Harun Farocki; how he finds Farocki's nonfiction films; the impression left by the fall of the Berlin Wall in 1989 and the reunification of Germany in 1990; and the influence of genre films such as Detour on Cuba Libre, Near Dark on The State I Am In, and Driver on Wolfsburg on his own films.
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Schilt, Thibaut. An Interview with François Ozon. University of Illinois Press, 2017. http://dx.doi.org/10.5406/illinois/9780252036002.003.0002.
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This chapter presents a interview with François Ozon that took place on October 6, 2009. Topics covered include whether his latest film, Le refuge [Hideaway, 2009], was the third part of a “trilogy on mourning” of which Sous le sable and Le temps qui reste were the first two installments; the recurrent themes of mourning, death, and parent–child relations in his films; his screenwriting collaborations; his lack of regret for any of the films he made during his career; his documentary film Jospin s'éclaire; whether he believes that there is a link between someone's identity and the films that he or she directs; and his next project, Potiche, an adaptation of a play by Pierre Barillet and Jean-Pierre Grédy.
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Keane, Adrian, and Paul McKeown. 9. Visual and voice identification. Oxford University Press, 2018. http://dx.doi.org/10.1093/he/9780198811855.003.0009.
Повний текст джерелаАнотація:
This chapter considers the risk of mistaken identification, and the law and procedure relating to evidence of visual and voice identification. In respect of evidence of visual identification, the chapter addresses: the Turnbull guidelines, including when a judge should stop a case and the direction to be given to the jury; visual recognition, including recognition by the jury themselves from a film, photograph or other image; evidence of analysis of films, photographs or other images; pre-trial procedure, including procedure relating to recognition by a witness from viewing films, photographs, either formally or informally; and admissibility where there have been breaches of pre-trial procedure. In respect of evidence of voice identification, the chapter addresses: pre -trial procedure; voice comparison by the jury with the assistance of experts or lay listeners’; and the warning to be given to the jury (essentially an adaption of the Turnbull warning, but with particular focus on the factors which might affect the reliability of voice identification).
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LoBrutto, Vincent. Ridley Scott. University Press of Kentucky, 2019. http://dx.doi.org/10.5810/kentucky/9780813177083.001.0001.
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This, the first biography of film director Ridley Scott, investigates the life and moving-image work of a major cinema artist. Ridley Scott is a supreme visualist who applies artistry to telling motion picture narratives. The influence of his early work in commercials, television projects, short films, and music videos is explored. The arc of his life experience is examined to provide a total picture of the man, with emphasis on the look and content of his films. Each Ridley Scott film is presented from a series of views: conception, production, postproduction, critical and social reactions, box office results, and impact on his long and continuing career. Scott’s ability to make and release feature films on a regular timetable and run a multifaceted production company at the same time reveals his stamina and work ethic. Thematic patterns in Ridley Scott’s filmography give further insight into his artistic personality; he repeatedly examines subjects such as war, the nature of the male of the species, and the strength of women. Scott deals with these themes through hands-on collaboration with screenwriters and film craft artists such as the director of photography, production designer, and editor. The book embraces the concept that Ridley Scott is a complex artist driven to apply his art in a constant flow of projects. This biography will fill in many gaps of the life and films of this British-born director, who is known and respected by audiences, film critics, and scholars all over the globe.
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Berrettini, Mark L. Interviews with Hal Hartley. University of Illinois Press, 2017. http://dx.doi.org/10.5406/illinois/9780252035951.003.0002.
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This chapter presents two interviews of Hal Hartley. The first, conducted by Justin Wyatt, was originally published in the fall 1998 issue of Film Quarterly. The second, conducted by Robert Avila in 2007, originally appeared on SF360.org, the San Francisco Film Society's online magazine. Topics covered in these interviews include the darker tone of the film Henry Fool; Hartley's views about the label “independent” after being heralded as one of the most important voices in American independent cinema; whether the conflicted attitude toward technology and the corporate world seen in his films reflect his own ambivalence in these areas; whether he is concerned that his films may be straying too far to the side of self-consciousness and self-reflexivity; whether he sees a of Hollywood movies; and whether there are times when he finds writing difficult.
Частини книг з теми "He thin film"
1
Enticknap, Leo. "‘I don’t think he did anything after that’: Paul Dickson." In Shadows of Progress: Documentary Film in Post-War Britain, 156–75. London: British Film Institute, 2010. http://dx.doi.org/10.1007/978-1-349-92441-7_10.
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2
Harada, Kanji, Takeru Matsuoka, Satoru Kishida, Heizo Tokutaka, Kikuo Fujimura, and Takafumi Maruyama. "Fabrication of 80K-Phase Bi-Sr-Ca-Cu-O Thin Films Using He-Gas." In Advances in Superconductivity VII, 949–52. Tokyo: Springer Japan, 1995. http://dx.doi.org/10.1007/978-4-431-68535-7_215.
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Pipolo, Tony. "This Common Clay." In The Melancholy Lens, 53–90. Oxford University Press, 2021. http://dx.doi.org/10.1093/oso/9780197551165.003.0003.
Повний текст джерелаАнотація:
Stan Brakhage was perhaps the most original and celebrated figure in the history of American avant-garde cinema. He was also a tormented man who traced his internal conflicts and primal rage to a troubled, unhappy childhood. This chapter considers how the circumstances of his early life formed the artist’s personality, and argues that Brakhage found a way to weave even the most neurotic aspects of his character into the fabric and fugal design of his films. The latter part of the chapter focuses on Tortured Dust, the last film he made about his first family, the objects of his art and his rage, concentrating primarily on his tense relationship with his two sons. Edited while he was also dictating an “autobiography” to his first wife Jane, the film reflects the mournful fallout of the loss of his first family.
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Trollope, Anthony. "Mrs. Brooke Burgess." In He Knew He Was Right. Oxford University Press, 2008. http://dx.doi.org/10.1093/owc/9780199537709.003.0098.
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IT may be doubted whether there was a happier young woman in England than Dorothy Stanbury when that September came which was to make her the wife of Mr. Brooke Burgess, the new partner in the firm of Cropper and Burgess. Her early aspirations in...
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Fleming, Colin. "He Returneth and He Danceth By." In Scrooge, 101–11. Liverpool University Press, 2021. http://dx.doi.org/10.3828/liverpool/9781800857032.003.0009.
Повний текст джерелаАнотація:
This chapter concludes the detailed chronological textual analysis of Scrooge. It also returns to the autobiographical concerns of the author relating to the formative role the film has played in his life
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Keane, Adrian, and Paul McKeown. "9. Visual and voice identification." In The Modern Law of Evidence, 276–300. Oxford University Press, 2020. http://dx.doi.org/10.1093/he/9780198848486.003.0009.
Повний текст джерелаАнотація:
This chapter considers the risk of mistaken identification, and the law and procedure relating to evidence of visual and voice identification. In respect of evidence of visual identification, the chapter addresses: the Turnbull guidelines, including when a judge should stop a case and the direction to be given to the jury; visual recognition, including recognition by the jury themselves from a film, photograph, or other image; evidence of analysis of films, photographs, or other images; pre-trial procedure, including procedure relating to recognition by a witness from viewing films, photographs, either formally or informally; and admissibility where there have been breaches of pre-trial procedure. In respect of evidence of voice identification, the chapter addresses: pre -trial procedure; voice comparison by the jury with the assistance of experts or lay listeners; and the warning to be given to the jury (essentially an adaption of the Turnbull warning, but with particular focus on the factors which might affect the reliability of voice identification).
7
Keane, Adrian, and Paul McKeown. "10. Visual and voice identification." In The Modern Law of Evidence, 300–324. Oxford University Press, 2022. http://dx.doi.org/10.1093/he/9780192855930.003.0010.
Повний текст джерелаАнотація:
This chapter considers the risk of mistaken identification, and the law and procedure relating to evidence of visual and voice identification. In respect of evidence of visual identification, the chapter addresses: the Turnbull guidelines, including when a judge should stop a case and the direction to be given to the jury; visual recognition, including recognition by the jury themselves from a film, photograph, or other image; evidence of analysis of films, photographs, or other images; pre-trial procedure, including procedure relating to recognition by a witness from viewing films, photographs, either formally or informally; and admissibility where there have been breaches of pre-trial procedure. In respect of evidence of voice identification, the chapter addresses: pre-trial procedure; voice comparison by the jury with the assistance of experts or lay listeners; and the warning to be given to the jury (essentially an adaption of the Turnbull warning, but with particular focus on the factors which might affect the reliability of voice identification).
8
McFarlane, Brian. "Early Days." In The Films of Fred Schepisi, 3–9. University Press of Mississippi, 2021. http://dx.doi.org/10.14325/mississippi/9781496835352.003.0001.
Повний текст джерелаАнотація:
This chapter deals with Fred Schepisi’s family background and education, as well as his entry into filming. Schepisi’s earliest career was with an advertising firm for whom he made commercials. Becoming production manager for Cinesound Production and then setting up his own company, The Film House, he obtained experience with the business aspects of film production, which would stand him in good stead when he became a feature-film director.
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Baumgartner, Michael. "Conclusion." In Metafilm Music in Jean-Luc Godard's Cinema, 385–94. Oxford University PressNew York, 2022. http://dx.doi.org/10.1093/oso/9780190497156.003.0011.
Повний текст джерелаАнотація:
Abstract The first part of this concluding chapter summarizes Godard’s concept of film music. He self-consciously approaches film music by either fragmenting musical compositions or repeating the unaltered fragments several times in the same film. Fragmentation and repetition are two devices with which Godard questions the validity of the leitmotif technique for cinematic use. He further explores music with quotations by self-consciously integrating into his films works of the Western musical canon or French, English, American, and Italian popular songs. He also expands the concept of quotation to referencing self-reflexively genre-specific film music. Critically questioning the function of film music in musical comedies, films noir, science-fiction films, and melodramas, he pastiches or parodies music associated with these stereotypical Hollywood genres in several of his 1960s films. A last category of metafilm music in Godard’s work is concerned with music making as a metaphor for filmmaking. This analogy between the two arts was prompted by the increasing intensification in the 1980s of his creative crisis as a postmodern filmmaker struggling with completing a meaningful work. The second part of this concluding chapter offers an outlook confirming that the concept of metafilm music is not confined to Godard’s work. A list provides names of other primarily modernist or postmodern filmmakers drawn to self-reflexive filmmaking and further suggests bodies of films that may likely include music that can be analyzed as metafilm music.
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Karapapa, Stavroula, and Luke McDonagh. "6. Moral rights." In Intellectual Property Law, 131–48. Oxford University Press, 2019. http://dx.doi.org/10.1093/he/9780198747697.003.0006.
Повний текст джерелаАнотація:
This chapter assesses moral rights. From a human rights perspective, the distinction between economic and moral rights can be traced back to Art. 27(2) of the Universal Declaration of Human Rights. The protection of the moral interests of the authors finds justification not only in the context of human rights but also under a special set of copyright rules that offer protection to non-pecuniary interests of the authors. The Copyright, Designs and Patents Act 1988 (CPDA) recognises four main moral rights: the right to be identified as the author or director of a work (this is the so-called paternity right); the right to object to derogatory treatment of a work (the so-called integrity right); the right to object to a false attribution of authorship in the case of a literary, dramatic, musical, and artistic work or a film; and the right of privacy in commissioned photographs and films.
Тези доповідей конференцій з теми "He thin film"
1
Aversa, Pierfrancesco, Heejae Lee, Minjin Kim, Olivier Plantevin, Olivier Cavani, Nadége Ollier, Bernard Geffroy, and Catherine Corbel. "Effect of Defect Production on Photoluminescence Properties in He ion Implanted Methylammonium Lead Tri-Iodide Perovskite Layers." In 3rd International Conference on Perovskite Thin Film Photovoltaics, Photonics and Optoelectronics. Valencia: Fundació Scito, 2017. http://dx.doi.org/10.29363/nanoge.abxpvperopto.2018.116.
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2
Shinya, Shotaro, Toyokazu Kaneko, Masatoshi Koyama, Toshihiko Maemoto, and Shigehiko Sasa. "Effects of He plasma treatment on zinc oxide thin film transistors." In 2017 IEEE International Meeting for Future of Electron Devices, Kansai (IMFEDK). IEEE, 2017. http://dx.doi.org/10.1109/imfedk.2017.7998045.
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3
Lehan, J. P., and R. W. Sprague. "Surface Plasmon Measurements of In2O3:Sn Thin Films." In Optical Interference Coatings. Washington, D.C.: Optica Publishing Group, 1992. http://dx.doi.org/10.1364/oic.1992.othe7.
Повний текст джерелаАнотація:
We have applied a He-Ne laser operating at 3.39 microns to probe the microstructure of thin films of In2O3:Sn by observing their surface plasmon characteristics. The results of the surface plasmon measurements will be contrasted with theoretical results calculated using the Drude model from measured DC electrical properties. Discrepancies between theory and experiment will be explained in terms of film microstructure.
4
Beauvais, Jacques, Pierre Galarneau, Roger A. Lessard, and Emile J. Knystautas. "He implantation effects in the 13–55-keV range on the optical recording properties of Te thin films." In OSA Annual Meeting. Washington, D.C.: Optica Publishing Group, 1990. http://dx.doi.org/10.1364/oam.1990.tht3.
Повний текст джерелаАнотація:
The behavior of the optical recording properties of 55 nm Te thin films on glass substrates has been investigated as a function of singly ionized He beam energies, with an observed decrease of the writing threshold of the thin films in the 23–45 keV range. However, the implanted dose within the Te thin films was always maintained at a fixed value, requiring the total implanted dose for the film–substrate system to increase at higher energies. The results of our study, which investigated implantations at various ion doses and beam energies in the 13–55 keV range, show that the total implanted dose within the film–substrate system is important in the observed decrease of the writing threshold of the thin films. Increases of the ion-beam energy at a fixed total dose produce no decrease in the writing threshold. Furthermore, measurements carried out as a function of planted doses at two fixed energies of 13 and 32 keV confirm that the total implanted dose for the film–substrate system is also important in the determination of a critical dose above which the writing threshold decreases.
5
Sankur, Haluk, C. Pritt, and Jeffrey G. Nelson. "Plasma luminescence generated in laser evaporation of optical thin-film material." In OSA Annual Meeting. Washington, D.C.: Optica Publishing Group, 1985. http://dx.doi.org/10.1364/oam.1985.fl2.
Повний текст джерелаАнотація:
The emission of the plasma generated when a pulsed CO2 laser is used to evaporate an optical thin-film material is analyzed by means of an optical multichannel analyzer in the 200-900-nm region. Source materials were Al2,O3, SiO2, HfO2, TiO2, and ZnO, which are absorbing at 10.6 µm. Very rich atomic spectra were obtained indicating the presence of excited neutrals, as well as singly, doubly, and triply ionized anions and cations. Molecular emission (e.g., Al–O) was observed when background gas pressures of O2, He, Ar, or N2 were increased to the range of 0.1–10 Torr. The optical power dependence of the emission intensity is nonlinear, indicating saturation behavior.
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Dobrowolski, J. A. "Comparison of the Fourier transform and flip-flop thin-film synthesis methods." In OSA Annual Meeting. Washington, D.C.: Optica Publishing Group, 1985. http://dx.doi.org/10.1364/oam.1985.fe3.
Повний текст джерелаАнотація:
The synthesis of thin-film systems with prescribed spectral characteristics has been the subject of many papers in the past three decades. A particularly powerful method, first described by Sossi, uses Fourier transforms to solve the inverse scattering problem for an inhomogeneous layer.1 This layer can then be transformed into a multilayer consisting of homogeneous films of many refractive indices. Through the use of the Herpin equivalent index concept, this multilayer can be transformed into a system consisting of two materials only. More recently Southwell described a simple numerical method which directly yields solutions based on the use of two materials.2 He applied it to the design of antireflection coatings. In this paper the two methods are applied to several different spectral filtering problems. The properties of the resulting numerical solutions are compared and contrasted.
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Nelson, Jeffrey G. "Mass and energy analysis of thin-film evaporant streams generated by pulsed laser heating." In OSA Annual Meeting. Washington, D.C.: Optica Publishing Group, 1985. http://dx.doi.org/10.1364/oam.1985.fl3.
Повний текст джерелаАнотація:
Little is known about the physics of film growth with laser evaporation, compared with more conventional techniques such as thermal or sputtering. For example, there is evidence that the atomic nature of the laser evaporated materials may be responsible for the observed epitaxial growth at comparatively low temperatures. It is of fundamental interest to study the physical processes which lead to such results. Oxides (ZnO, Al2O3, SiO2) and fluorides (PbF2), which have been used to form high quality optical thin films, were evaporaed using a CO2 TEA laser with power densities exceeding 109W/cm2. The chemical state (atoms, molecules, or clusters) of the evaporants was determined using a residual gas analyzer (RGA). The relative concentrations of the different chemical species were measured as a function of laser conditions. Using the RGA in conjunction with a time-of-flight apparatus, the kinetic energy of the evaporants was also studied as a function of laser conditions. Finally, the effect of reactive (O2) and inert (N2, He) gases on the evaporation process was also studied.
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Babaev, V. G., M. S. Dzhidzhoev, V. M. Gordienko, M. A. Joukov, A. B. Savel’ev, A. A. Shashkov, A. P. Tarasevitch, and R. V. Volkov. "Overheating of Femtosecond Plasma in Freely Suspended Superthin Films." In Applications of High Field and Short Wavelength Sources. Washington, D.C.: Optica Publishing Group, 1997. http://dx.doi.org/10.1364/hfsw.1997.the35.
Повний текст джерелаАнотація:
Previously we proposed a new thin film target to obtain femtosecond plasma overheating using artificially limited thermoconductivity [1]. We discussed the results of computer modeling of interaction of superintense femtosecond laser pulse with freely suspended thin carbon film. It was shown that for film thicknesses of 50 nm and less the electron temperature rises up to 500 eV and even higher with decrease in thickness. This causes increase in x-ray yield from H- and He-like C ions. In this paper we present for the first time the experimental results demonstrating the phenomenon for freely suspended carbon films as thin as 20-30 nm. It was obtained that for these superthin films x-ray yield increased more than twofold for p-polarized light. The comparison of the experimental results with predictions of the computer code shows good quantitative agreement and leads to the conclusion that there is threefold overheating of plasma layer up to 500 eV.
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Targove, James D., Linda J. Lingg, and H. Angus Macleod. "Verification of Momentum Transfer as the Dominant Densifying Mechanism in Ion-assisted Deposition." In Optical Interference Coatings. Washington, D.C.: Optica Publishing Group, 1988. http://dx.doi.org/10.1364/oic.1988.thb8.
Повний текст джерелаАнотація:
Ion-assisted deposition (IAD), the bombardment of thermally evaporated thin films by low-energy ions during growth, has been used very successfully to density thermally evaporated coatings.1 However, the physical mechanism involved in this densification Is still unclear. The only theoretical attempt to explain this densification is that of Müller.2,3 He first investigated the effect on film densification of thermal spikes,2 ion-induced localized annealing events for which the relevant ion parameter is the ion energy. The conclusion was that these annealing events do not significantly density the films under typical IAD conditions. A collisional cascade model3 then showed that film densification can be caused by the recoil implantation of near-surface atoms, a momentum dependent process. We therefore decided to perform an experiment that would differentiate between energy and momentum effects in the IAD process.
10
Die-chi, SUN, Yu Zeng-qi, Li Fu-ming, Du Yuan-cheng, Wang Hai, and Jiang Guo-bao. "Formation of TiN on Si and SiO2 by Rapid Processing Using a Large Area Electron Beam." In Microphysics of Surfaces, Beams, and Adsorbates. Washington, D.C.: Optica Publishing Group, 1987. http://dx.doi.org/10.1364/msba.1987.wc7.
Повний текст джерелаАнотація:
The increasing challenge in reducing the vertical dimension in modern VLSI. A multilayer metallization system has been used conventionally. It comprises three parts, Al used as a last layer to offer electrical interconnects, the metalloid silicide chosen as ohmic contact to Si, an intermediate layer inserted between them as diffusion barrier. So-called nitrides of transition metal may be suggested as suitable diffusion barrier,/1/ as we know, TiN film can be produced by nitrogen ion implanted onto evaporated Ti film and formed during nitrogen annealing of magnetron sputtered Ti film /2/ or nitrogen ion implanted and annealed TiN film with a thermal treatment by an electron beam /3/. However, a suitable TiN diffusion barrier layer, as most previous papers have reported, either a relative high annealing temperature or longer enough treating time was required. We describe here a new method of TiN film on crystalline Si and SiO2 substrate respectively using a wide area electron beam. The Ti film was deposited in a standard vaccum system, the thickness of Ti film was 1000 Å. The rapid nitride processing was performed by a large area plasma electron beam, the cross section of electron beam is 50 mm in diameter and the uniformity better than 4% over cross section of EB. It was operated in 10°–10−2 Torr of N2 and He gas enviroment. In experiment, the processing time, ratio of the mixture of N2 and He, the pressure and flow rate of gases and power density of EB were varied. After 5-50 seconds nitridation processing TiN were formed, the surface of thin film turned gold like colour.
Звіти організацій з теми "He thin film"
1
Hattar, Khalid Mikhiel, and David Robinson. In-situ 3D characterization of He bubble and displacement damage in dense and nanoporous thin films. Office of Scientific and Technical Information (OSTI), October 2015. http://dx.doi.org/10.2172/1226424.
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2
Ander, Kjell. An abdominal stridulation organ in Cyphoderris (Prophalangopsidae) and concerning the systematic classification of the Ensifera (Saltatoria). MacEwan University Library, January 2021. http://dx.doi.org/10.31542/r.gm:2687.
Повний текст джерелаАнотація:
Ensiferan insects (crickets, katydids, grigs and allies) are well known for rubbing parts of their cuticle together to produce sound: a process called stridulation. In this article Swedish entomologist Kjell Ander describes a novel (at the time) stridulatory apparatus in the great grig, Cyphoderris monstrosa (Prophalangopsidae), a relict ensiferan found in the mountainous regions of western North America. Ander used preserved specimens to predict the sound-producing function of a pair of abdominal file-scraper apparatuses, although he was never able to directly test his proposed mechanism nor did he speculate as to the adaptive significance of the structures. The article concludes with a review of the systematic placement of various higher level taxa within the order Orthoptera, of which Ensifera is one suborder.
3
Ander, Kjell. An abdominal stridulation organ in Cyphoderris (Prophalangopsidae) and concerning the systematic classification of the Ensifera (Saltatoria). MacEwan University Library, January 2021. http://dx.doi.org/10.31542/r.gm:2687.
Повний текст джерелаАнотація:
Ensiferan insects (crickets, katydids, grigs and allies) are well known for rubbing parts of their cuticle together to produce sound: a process called stridulation. In this article Swedish entomologist Kjell Ander describes a novel (at the time) stridulatory apparatus in the great grig, Cyphoderris monstrosa (Prophalangopsidae), a relict ensiferan found in the mountainous regions of western North America. Ander used preserved specimens to predict the sound-producing function of a pair of abdominal file-scraper apparatuses, although he was never able to directly test his proposed mechanism nor did he speculate as to the adaptive significance of the structures. The article concludes with a review of the systematic placement of various higher level taxa within the order Orthoptera, of which Ensifera is one suborder.
4
Microbial Evolution: This report is based on a colloquium convened by the American Academy of Microbiology on August 28-30, 2009, in San Cristobal, Ecuador. American Society for Microbiology, August 2011. http://dx.doi.org/10.1128/aamcol.28aug.2009.
Повний текст джерелаАнотація:
The year 2009 marked both the 200th anniversary of Darwin's birth and the 150th anniversary of the publication of his landmark book, On the Origin of Species. In August 2009, to celebrate these milestones, the American Academy of Microbiology convened a colloquium in the Galapagos Islands, where Darwin made some of his most crucial observations, to consider a new question: what would Darwin have made of the microbial world? The ability to sail to remote sites like the Galapagos, and access to specimens collected by himself and other avid naturalists, gave Darwin the information he needed to develop a conceptual framework for understanding life's visible diversity. Today, new discoveries and technical capabilities in microbiology are providing information that for the first time makes it possible to develop a conceptual framework for deepening our understanding of the diversity of the microbial world. Darwin focused his attention on visible life forms, which actually make up only a small fraction of the living world—the invisible world of microorganisms was as yet largely unexplored in his time. Yet Darwin's theory has proven remarkably robust; despite some fundamental differences between microorganisms and the rest of the living world, the two lynchpins of Darwin's theory—descent with modification and natural selection—have proven as powerful in explaining microbial evolution as they have in explaining macrobial evolution. Since Darwin, the advent of Mendelian Genetics and the Modern Synthesis have provided a wealth of new tools to evolutionists; these tools are also of fundamental importance in the modern study of microbiology. The scientists gathered at the colloquium considered two fundamental questions: ▪ Is the balance of evolutionary mechanisms, for example natural selection or drift, or individual and group selection, consistent among microbes and similar between microbes and macrobes? ▪ How are the mode and tempo of microbial evolution influenced by Earth's diversity of environments, and the changing global environment, and how are microbes themselves driving these changes? The colloquium provided an opportunity for individuals with expertise in evolutionary biology, genetic engineering, mycology, virology, microbial ecology, and other fields to discuss these issues and review the areas in which research is needed to fill gaps in our understanding.