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Статті в журналах з теми "He thin film"
Cieslikowski, D., P. Leiderer, and A. J. Dahm. "Mobility oscillations of electrons on thin He films." Canadian Journal of Physics 65, no. 11 (November 1, 1987): 1525–31. http://dx.doi.org/10.1139/p87-243.
Повний текст джерелаMILLER, M. D., and E. KROTSCHECK. "THEORY OF THIRD SOUND AND STABILITY OF THIN 3He–4He SUPERFLUID FILMS." International Journal of Modern Physics B 21, no. 13n14 (May 30, 2007): 2091–102. http://dx.doi.org/10.1142/s021797920704349x.
Повний текст джерелаKROTSCHECK, E., and M. D. MILLER. "GENERIC ELECTRON MOBILITY IN SURFACE STATES ON HELIUM FILMS." International Journal of Modern Physics B 21, no. 13n14 (May 30, 2007): 2103–14. http://dx.doi.org/10.1142/s0217979207043506.
Повний текст джерелаStanford, Michael G., Joo Hyon Noh, Kyle Mahady, Anton V. Ievlev, Peter Maksymovych, Olga S. Ovchinnikova, and Philip D. Rack. "Room-Temperature Activation of InGaZnO Thin-Film Transistors via He+ Irradiation." ACS Applied Materials & Interfaces 9, no. 40 (September 28, 2017): 35125–32. http://dx.doi.org/10.1021/acsami.7b10449.
Повний текст джерелаKurokawa, Mao, Takao Shimizu, Mutsuo Uehara, Atsuo Katagiri, Kensuke Akiyama, Masaaki Matsushima, Hiroshi Uchida, Yoshisato Kimura, and Hiroshi Funakubo. "Control ofp- andn-type Conduction in Thermoelectric Non-doped Mg2Si Thin Films Prepared by Sputtering Method." MRS Advances 3, no. 24 (2018): 1355–59. http://dx.doi.org/10.1557/adv.2018.150.
Повний текст джерелаUEMURA, Y. J. "WHAT CAN WE LEARN FROM COMPARISON BETWEEN CUPRATES AND HE FILMS?: PHASE SEPARATION AND FLUCTUATING SUPERFLUIDITY." International Journal of Modern Physics B 14, no. 29n31 (December 20, 2000): 3703–10. http://dx.doi.org/10.1142/s0217979200004258.
Повний текст джерелаMiyaguchi, Kazuya, Shin Kajita, Hirohiko Tanaka, and Noriyasu Ohno. "Fabrication of nanostructured Ti thin film with Ti deposition in He plasmas." Japanese Journal of Applied Physics 60, no. 3 (February 19, 2021): 038004. http://dx.doi.org/10.35848/1347-4065/abe3a5.
Повний текст джерелаEl Hog, Sahbi, and H. T. Diep. "Tricriticality of the Blume–Emery–Griffiths model in thin films of stacked triangular lattices." Modern Physics Letters B 30, no. 07 (March 20, 2016): 1650071. http://dx.doi.org/10.1142/s0217984916500718.
Повний текст джерелаLee, Baek-Ju, Yoo-Seong Kim, Dong-Won Seo, and Jae-Wook Choi. "The Effect of Deposition Temperature of TiN Thin Film Deposition Using Thermal Atomic Layer Deposition." Coatings 13, no. 1 (January 5, 2023): 104. http://dx.doi.org/10.3390/coatings13010104.
Повний текст джерелаXiang, Xuepeng, Jingjing Rao, Zuyun He, Mengzhen Zhou, Qicheng Huang, Yuan Gao, Zhen Fan, Xinwei Wang, and Yan Chen. "Tailoring resistive switching in epitaxial SrCoO2.5 films by irradiation induced uniaxial strain." Journal of Applied Physics 132, no. 3 (July 21, 2022): 035304. http://dx.doi.org/10.1063/5.0099200.
Повний текст джерелаДисертації з теми "He thin film"
He, Chuan [Verfasser]. "Ultrafast Dynamics of Coherent Phonons in Thin Films and Free-Standing Membranes / Chuan He." Konstanz : Bibliothek der Universität Konstanz, 2015. http://d-nb.info/1110772351/34.
Повний текст джерелаMartirosyan, Vahagn. "Atomistic simulations of H2 and He plasmas modification of thin-films materials for advanced etch processes." Thesis, Université Grenoble Alpes (ComUE), 2017. http://www.theses.fr/2017GREAT101/document.
Повний текст джерелаThis PhD thesis focuses on technological challenges related to the development of advanced transistors (FinFET, FDSOI), where the etching of thin films reveals several issues. In particular, the etching of silicon nitride spacers should be achieved with a nanoscale precision without damaging the underlayers, a step which cannot be addressed by conventional CW plasmas. To overpass this limitation, an innovative approach was recently developed (so-called Smart Etch), which is based on light ion implantation and composed of two steps. First, the material to be etched is modified by exposure to a hydrogen (H2) or helium (He) ICP or CCP plasma; in a second step, the modified layer is selectively removed using wet etching or gaseous reactants only. To support the fundamental understanding of the first step and assist the development of this new technology, molecular dynamics (MD) simulations were performed to study the interaction between silicon/silicon nitride films and hydrogen/helium plasmas. MD was used to investigate how the substrates modification is affected by the ion energy, the ion dose, the ion composition or the radical-to-ion flux ratio (in the case of a H2 plasma). In agreement with experiments, simulations of He+ or Hx+ (x=1-3) ion bombardment of Si/SiN show that a self-limited ion implantation takes place with a surface evolution composed of two stages: a rapid volume modification (with no etching) followed by a slow saturation and the formation of a stable He- or H- implanted layer at steady state. The mechanisms of ion-induced damage (Si-Si or Si-N bond breaking, He or H2 trapping/desorption, SiHx (x=1-3) complex creation) are investigated and allow to bring new insights to both the Smart Cut and Smart Etch technologies. Si/SiN exposure to various H2 plasma conditions (with both Hx+ ions and H radicals) was then studied. In this case, a self-limited transformation is observed but the H-modified layers are simultaneously etched during the ion implantation, at a rate ~10 times smaller for SiN compared to Si. Simulations show that to modify Si/SiN thin films with a nanoscale precision by H2 or He plasmas, both the ion energy and the ion flux have to be controlled very cautiously. In particular, low ion doses, where the substrate evolution is in rapid modification stage, must be avoided since the substrate evolution cannot be precisely controlled. In H2 plasmas, high ion energies induce thicker modified layers but smaller and less homogeneous hydrogenation rates. The ion composition and the radical-to-ion flux ratio Γ must be considered as well, since the etch rate increases with Γ, compromising even the possibility to achieve a Smart Etch of silicon. The MD simulations performed in this thesis enable to clarify various unexplained phenomena seen in the Smart-Etch experimentally, and reveal some possible issues in this new process. In the end, a range for plasma parameters is proposed to optimize this first step of the Smart Etch process and to control the modification of SiN with a sub-nanoscale precision
Kasaei, Leila. "Modification of Iron pnictide and MgB2 thin films using focused He+ ion beam irradiation for superconducting devices." Diss., Temple University Libraries, 2019. http://cdm16002.contentdm.oclc.org/cdm/ref/collection/p245801coll10/id/585476.
Повний текст джерелаPh.D.
Continued pursuit of better superconducting devices and an understanding of how the focused ion beam evolves in a complex material are the primary motivations behind this work. The materials of interest are MgB2 and Co-doped Ba122. Superconducting properties of MgB2 were discovered in 2001. It is the first superconductor recognized as a multigap superconductor. Owing to its high Tc of ~39K, electronic circuits based on this material are expected to operate at a much higher temperature (~25 K) than low-temperature superconductors, using compact cryocoolers. Co-doped Ba122 is also a multigap superconductor which belongs to Fe-based superconductor (FeSC) family. The undoped Ba122 compound is a metal exhibiting antiferromagnetism which coexists with superconducting phase up to a certain doping level. The optimally electron-doped BaFe2As2 exhibits the transition temperature Tc of ~21 K which corresponds to the top of the “dome” in the phase diagram. While the Fe-based SC may not signify a particular advance in terms of practical applications, many unique aspects make them worth studying. In particular, the superconducting gap symmetry and structures which appear to be quite different from family to family and not yet fully understood. We report on investigating the normal-state, and superconducting properties of Co-doped BaFe2As2 and MgB2 thin films irradiated at room temperature using a 30-keV focused He+ ion beam in helium ion microscope (HIM). R-T measurement was carried out to extract the dose dependence for Tc and resistivity p0 of the irradiated region. We observed an increase in p0 and a decrease in Tc down to complete suppression of superconductivity for both materials, although the trend of the changes was quite different. In addition, for Ba122, the data for ΔTc ⁄ Tc0 versus measured change in resistivity favors s± over s++ symmetry. Using TRIM software, the projected range and the damage density distribution of the He+ ions were tracked in the samples. Single track irradiation sites for MgB2 sample were characterized using FIB extraction/TEM. The TEM micrographs reveal the subsurface damage density contours that evolve with increasing dose. The Josephson effect is a unique phenomenon that gives direct access to the phase difference 𝜑 of the macroscopic wave functions that describe the superconducting state. Josephson junction is also appealing for engineering application in superconducting electronics. Having found the dose at which complete suppression of Tc occurs from the first part of the study, a fabrication process was developed to produce planar Josephson junctions from MgB2 and Co-doped Ba122. The Josephson coupling across the barrier for both materials was observed. MgB2 Josephson junctions showed resistivity shunted junction (RSJ) I-V curve with excellent uniformity and reproducibility. We have also demonstrated tens of planar MgB2 Josephson junctions operating coherently in series arrays. 60 Josephson junction series arrays successfully developed with less than 4% spread in critical current at 12 K. Under microwave radiation, flat giant Shapiro steps up to 150 μA width appear at voltages Vn=NnΦ0f, where N is the number of junction in the array, 𝑛 is an integer representing Shapiro step index, and f is the applied microwave frequency. The uniformity and close spacing of JJs in the arrays are significantly better than MgB2 multi-junction devices made by other techniques. It has been a huge success in showing the feasibility of this technology for pursuing superconducting digital electronics, Josephson voltage standards and arbitrary function generators in particular, in MgB2 with ≥ 20K operating temperature.
Temple University--Theses
He, Guping [Verfasser], Brigitte [Akademischer Betreuer] Voit, and Christine [Akademischer Betreuer] Papadakis. "The Effect of Modified AuNPs on the Morphology and Nanostructure Orientation of PPMA-b-PMMA Block Copolymer Thin Films / Guping He. Gutachter: Brigitte Voit ; Christine Papadakis. Betreuer: Brigitte Voit." Dresden : Saechsische Landesbibliothek- Staats- und Universitaetsbibliothek Dresden, 2014. http://d-nb.info/1068448865/34.
Повний текст джерелаRath, Pranaya Kishore. "Experimental Investigation of Electrons In and Above Liquid Helium." Thesis, 2022. https://etd.iisc.ac.in/handle/2005/5838.
Повний текст джерелаINSPIRE, DST India
Chang, Wei-teng, and 張巍騰. "he study on the magnetism of Diluted Magnetic Semiconductor ZnMnO thin films." Thesis, 2006. http://ndltd.ncl.edu.tw/handle/15395646358646444736.
Повний текст джерела義守大學
材料科學與工程學系碩士班
94
Abstract This experiment, employing the radio-frequency (rf) magnetron sputtering method to deposit the ZnO thin films doping by manganese (6at%~20at%) as well as the ZnO thin films co-doping by magnesium (10at%), phosphorous (1at%) and manganese (2at%~10at%) on corning glass 1737, is mainly categorized into three parts. The first part concerns the crystal structure and microstructure. The second part explores the optical properties and the third part investigates the magnetic properties. From the experiment result, we observe that the second phase appears in the thin films of ZnO doped by manganese when the manganese content is 10at%. The band gap increases from 3.25eV to 2.64eV when the manganese content is from 6at% to 20at%. Regarding the magnetic characteristics, we find that the ferromagnetism appears in all thin films at room temperature and there exists maximum saturated magnetization when the manganese content is 15at%. From the experiment result of the ZnO thin films co-doped by magnesium, phosphorous, and manganese, the band gap increases from 3.43eV to 3.29eV when the manganese content is from 2at% to 10at%, moreover, it shows the ferromagnetic features at low temperature (10K) and room temperature. In this experiment, we observe ferromagnetism from both kinds of thin films, we can not find out the Mn3O4 phase from the TEM (Transmission Electron Microscope) analysis. The main cause of the ferromagnetism is due to the Mn2O3 phase.
He, Yunbin [Verfasser]. "CuInS2 thin films for photovoltaic : RF reactive sputter deposition and characterization / von Yunbin He." 2006. http://d-nb.info/981580297/34.
Повний текст джерелаLin, Hsiu-Chi, and 林秀錡. "The characteristics of SiH4-H2 plasma with additional He, Ne, Ar gases and their effects on the resultant properties of nc-Si:H thin films." Thesis, 2015. http://ndltd.ncl.edu.tw/handle/em2hmr.
Повний текст джерела明志科技大學
材料工程系碩士班
104
In this study, hydrogenated nanocrystalline silicon (nc-Si:H) films were prepared using ICP-CVD system attached with four internal U-shaped low inductance antennas. Ar, He, and Ne gases were introduced into SiH4/H2 plasma during deposition, with the variation of gas flow rate and SiH4/H2 ratios. During deposition, an OES (optical emission spectrometer) and a plasma probe were used to characterize the conditions of plasma. The crystalllinity, structure, and Si-H bonding of these Si:H films were investigated using Raman scattering spectroscopy, XRD, and FTIR. The correlations of plasma characteristics and thin film properties were studied. It is found that the crystallinity of nc-Si:H film increases with the introduction of Ar, He, and Ne gases, especially when Ar is added. The plasma density and IH* increase with the increase of the inert gases, most likely due to penning ionization effect. The deposition rate decreases with the inert gases. This might be caused by the enhancement of hydrogen etching.
Книги з теми "He thin film"
Bo mo tai yang dian chi guan jian ke xue he ji shu: Key science and technology of thin film solar cells. Shanghai: Shanghai ke xue ji shu chu ban she, 2013.
Знайти повний текст джерелаHerzogenrath, Bernd, ed. The Films of Bill Morrison. NL Amsterdam: Amsterdam University Press, 2017. http://dx.doi.org/10.5117/9789089649966.
Повний текст джерелаTröhler, Margrit, and Guido Kirsten, eds. Christian Metz and the Codes of Cinema. NL Amsterdam: Amsterdam University Press, 2018. http://dx.doi.org/10.5117/9789089648921.
Повний текст джерелаBuckland, Warren, and Daniel Fairfax, eds. Conversations with Christian Metz. NL Amsterdam: Amsterdam University Press, 2017. http://dx.doi.org/10.5117/9789089648259.
Повний текст джерелаPollack, Howard. Film Work. Oxford University Press, 2017. http://dx.doi.org/10.1093/oso/9780190458294.003.0015.
Повний текст джерелаFisher, Jaimey. Interview with Christian Petzold. University of Illinois Press, 2017. http://dx.doi.org/10.5406/illinois/9780252037986.003.0002.
Повний текст джерелаSchilt, Thibaut. An Interview with François Ozon. University of Illinois Press, 2017. http://dx.doi.org/10.5406/illinois/9780252036002.003.0002.
Повний текст джерелаKeane, Adrian, and Paul McKeown. 9. Visual and voice identification. Oxford University Press, 2018. http://dx.doi.org/10.1093/he/9780198811855.003.0009.
Повний текст джерелаLoBrutto, Vincent. Ridley Scott. University Press of Kentucky, 2019. http://dx.doi.org/10.5810/kentucky/9780813177083.001.0001.
Повний текст джерелаBerrettini, Mark L. Interviews with Hal Hartley. University of Illinois Press, 2017. http://dx.doi.org/10.5406/illinois/9780252035951.003.0002.
Повний текст джерелаЧастини книг з теми "He thin film"
Enticknap, Leo. "‘I don’t think he did anything after that’: Paul Dickson." In Shadows of Progress: Documentary Film in Post-War Britain, 156–75. London: British Film Institute, 2010. http://dx.doi.org/10.1007/978-1-349-92441-7_10.
Повний текст джерелаHarada, Kanji, Takeru Matsuoka, Satoru Kishida, Heizo Tokutaka, Kikuo Fujimura, and Takafumi Maruyama. "Fabrication of 80K-Phase Bi-Sr-Ca-Cu-O Thin Films Using He-Gas." In Advances in Superconductivity VII, 949–52. Tokyo: Springer Japan, 1995. http://dx.doi.org/10.1007/978-4-431-68535-7_215.
Повний текст джерелаPipolo, Tony. "This Common Clay." In The Melancholy Lens, 53–90. Oxford University Press, 2021. http://dx.doi.org/10.1093/oso/9780197551165.003.0003.
Повний текст джерелаTrollope, Anthony. "Mrs. Brooke Burgess." In He Knew He Was Right. Oxford University Press, 2008. http://dx.doi.org/10.1093/owc/9780199537709.003.0098.
Повний текст джерелаFleming, Colin. "He Returneth and He Danceth By." In Scrooge, 101–11. Liverpool University Press, 2021. http://dx.doi.org/10.3828/liverpool/9781800857032.003.0009.
Повний текст джерелаKeane, Adrian, and Paul McKeown. "9. Visual and voice identification." In The Modern Law of Evidence, 276–300. Oxford University Press, 2020. http://dx.doi.org/10.1093/he/9780198848486.003.0009.
Повний текст джерелаKeane, Adrian, and Paul McKeown. "10. Visual and voice identification." In The Modern Law of Evidence, 300–324. Oxford University Press, 2022. http://dx.doi.org/10.1093/he/9780192855930.003.0010.
Повний текст джерелаMcFarlane, Brian. "Early Days." In The Films of Fred Schepisi, 3–9. University Press of Mississippi, 2021. http://dx.doi.org/10.14325/mississippi/9781496835352.003.0001.
Повний текст джерелаBaumgartner, Michael. "Conclusion." In Metafilm Music in Jean-Luc Godard's Cinema, 385–94. Oxford University PressNew York, 2022. http://dx.doi.org/10.1093/oso/9780190497156.003.0011.
Повний текст джерелаKarapapa, Stavroula, and Luke McDonagh. "6. Moral rights." In Intellectual Property Law, 131–48. Oxford University Press, 2019. http://dx.doi.org/10.1093/he/9780198747697.003.0006.
Повний текст джерелаТези доповідей конференцій з теми "He thin film"
Aversa, Pierfrancesco, Heejae Lee, Minjin Kim, Olivier Plantevin, Olivier Cavani, Nadége Ollier, Bernard Geffroy, and Catherine Corbel. "Effect of Defect Production on Photoluminescence Properties in He ion Implanted Methylammonium Lead Tri-Iodide Perovskite Layers." In 3rd International Conference on Perovskite Thin Film Photovoltaics, Photonics and Optoelectronics. Valencia: Fundació Scito, 2017. http://dx.doi.org/10.29363/nanoge.abxpvperopto.2018.116.
Повний текст джерелаShinya, Shotaro, Toyokazu Kaneko, Masatoshi Koyama, Toshihiko Maemoto, and Shigehiko Sasa. "Effects of He plasma treatment on zinc oxide thin film transistors." In 2017 IEEE International Meeting for Future of Electron Devices, Kansai (IMFEDK). IEEE, 2017. http://dx.doi.org/10.1109/imfedk.2017.7998045.
Повний текст джерелаLehan, J. P., and R. W. Sprague. "Surface Plasmon Measurements of In2O3:Sn Thin Films." In Optical Interference Coatings. Washington, D.C.: Optica Publishing Group, 1992. http://dx.doi.org/10.1364/oic.1992.othe7.
Повний текст джерелаBeauvais, Jacques, Pierre Galarneau, Roger A. Lessard, and Emile J. Knystautas. "He implantation effects in the 13–55-keV range on the optical recording properties of Te thin films." In OSA Annual Meeting. Washington, D.C.: Optica Publishing Group, 1990. http://dx.doi.org/10.1364/oam.1990.tht3.
Повний текст джерелаSankur, Haluk, C. Pritt, and Jeffrey G. Nelson. "Plasma luminescence generated in laser evaporation of optical thin-film material." In OSA Annual Meeting. Washington, D.C.: Optica Publishing Group, 1985. http://dx.doi.org/10.1364/oam.1985.fl2.
Повний текст джерелаDobrowolski, J. A. "Comparison of the Fourier transform and flip-flop thin-film synthesis methods." In OSA Annual Meeting. Washington, D.C.: Optica Publishing Group, 1985. http://dx.doi.org/10.1364/oam.1985.fe3.
Повний текст джерелаNelson, Jeffrey G. "Mass and energy analysis of thin-film evaporant streams generated by pulsed laser heating." In OSA Annual Meeting. Washington, D.C.: Optica Publishing Group, 1985. http://dx.doi.org/10.1364/oam.1985.fl3.
Повний текст джерелаBabaev, V. G., M. S. Dzhidzhoev, V. M. Gordienko, M. A. Joukov, A. B. Savel’ev, A. A. Shashkov, A. P. Tarasevitch, and R. V. Volkov. "Overheating of Femtosecond Plasma in Freely Suspended Superthin Films." In Applications of High Field and Short Wavelength Sources. Washington, D.C.: Optica Publishing Group, 1997. http://dx.doi.org/10.1364/hfsw.1997.the35.
Повний текст джерелаTargove, James D., Linda J. Lingg, and H. Angus Macleod. "Verification of Momentum Transfer as the Dominant Densifying Mechanism in Ion-assisted Deposition." In Optical Interference Coatings. Washington, D.C.: Optica Publishing Group, 1988. http://dx.doi.org/10.1364/oic.1988.thb8.
Повний текст джерелаDie-chi, SUN, Yu Zeng-qi, Li Fu-ming, Du Yuan-cheng, Wang Hai, and Jiang Guo-bao. "Formation of TiN on Si and SiO2 by Rapid Processing Using a Large Area Electron Beam." In Microphysics of Surfaces, Beams, and Adsorbates. Washington, D.C.: Optica Publishing Group, 1987. http://dx.doi.org/10.1364/msba.1987.wc7.
Повний текст джерелаЗвіти організацій з теми "He thin film"
Hattar, Khalid Mikhiel, and David Robinson. In-situ 3D characterization of He bubble and displacement damage in dense and nanoporous thin films. Office of Scientific and Technical Information (OSTI), October 2015. http://dx.doi.org/10.2172/1226424.
Повний текст джерелаAnder, Kjell. An abdominal stridulation organ in Cyphoderris (Prophalangopsidae) and concerning the systematic classification of the Ensifera (Saltatoria). MacEwan University Library, January 2021. http://dx.doi.org/10.31542/r.gm:2687.
Повний текст джерелаAnder, Kjell. An abdominal stridulation organ in Cyphoderris (Prophalangopsidae) and concerning the systematic classification of the Ensifera (Saltatoria). MacEwan University Library, January 2021. http://dx.doi.org/10.31542/r.gm:2687.
Повний текст джерелаMicrobial Evolution: This report is based on a colloquium convened by the American Academy of Microbiology on August 28-30, 2009, in San Cristobal, Ecuador. American Society for Microbiology, August 2011. http://dx.doi.org/10.1128/aamcol.28aug.2009.
Повний текст джерела