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Статті в журналах з теми "H Thin Films"
Baldi, A., V. Palmisano, M. Gonzalez-Silveira, Y. Pivak, M. Slaman, H. Schreuders, B. Dam, and R. Griessen. "Quasifree Mg–H thin films." Applied Physics Letters 95, no. 7 (August 17, 2009): 071903. http://dx.doi.org/10.1063/1.3210791.
Повний текст джерелаKrist, Th, M. Brière, and L. Cser. "H in Ti thin films." Thin Solid Films 228, no. 1-2 (May 1993): 141–44. http://dx.doi.org/10.1016/0040-6090(93)90583-b.
Повний текст джерелаBurlaka, Vladimir, Kai Nörthemann, and Astrid Pundt. "Nb-H Thin Films: On Phase Transformation Kinetics." Defect and Diffusion Forum 371 (February 2017): 160–65. http://dx.doi.org/10.4028/www.scientific.net/ddf.371.160.
Повний текст джерелаBorisov, A. G., and H. Winter. "Formation of H− on thin aluminum films." Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms 115, no. 1-4 (July 1996): 142–45. http://dx.doi.org/10.1016/0168-583x(96)01518-2.
Повний текст джерелаGlesener, J. W., J. M. Anthony, and A. Cunningham. "Photoluminescence investigation of a-C: H thin films." Diamond and Related Materials 2, no. 5-7 (April 1993): 670–72. http://dx.doi.org/10.1016/0925-9635(93)90201-c.
Повний текст джерелаMahdjoubi, L., N. Hadj-Zoubir, and M. Benmalek. "Photoelectrical properties of H+ implanted CdS thin films." Thin Solid Films 156, no. 2 (January 1988): L21—L26. http://dx.doi.org/10.1016/0040-6090(88)90332-x.
Повний текст джерелаEbel, M. F., H. Ebel, M. Mantler, J. Wernisch, R. Svagera, M. Gazicki, F. Olcaytug, J. Schalko, F. Kohl, and A. Jachimowicz. "X-ray analysis of thin GexCyOz: H films." X-Ray Spectrometry 21, no. 3 (May 1992): 137–42. http://dx.doi.org/10.1002/xrs.1300210308.
Повний текст джерелаZhou, Rui, Zhaoyang Zhao, Juanxia Wu, and Liming Xie. "Chemical Vapor Deposition of IrTe2 Thin Films." Crystals 10, no. 7 (July 3, 2020): 575. http://dx.doi.org/10.3390/cryst10070575.
Повний текст джерелаChen, Yuan-Tsung. "Nanoindentation and Adhesion Properties of Ta Thin Films." Journal of Nanomaterials 2013 (2013): 1–7. http://dx.doi.org/10.1155/2013/154179.
Повний текст джерелаMisra, A., H. Kung, T. E. Mitchell, and M. Nastasi. "Residual stresses in polycrystalline Cu/Cr multilayered thin films." Journal of Materials Research 15, no. 3 (March 2000): 756–63. http://dx.doi.org/10.1557/jmr.2000.0109.
Повний текст джерелаДисертації з теми "H Thin Films"
Young, David Y. "Electrochemical H insertion in Pd thin films." Thesis, Massachusetts Institute of Technology, 2018. https://hdl.handle.net/1721.1/122864.
Повний текст джерелаCataloged from PDF version of thesis.
Includes bibliographical references (pages 51-55).
Metal hydrides are pertinent to several applications, including hydrogen storage, gas separation, and electrocatalysis. The Pd-H system is used as a model for metal-hydrogen systems and the effect H insertion has on their properties. A study was conducted to assess the performance of various electrochemical cell formats in electrochemically inserting H into Pd, which is important in building devices for the above applications. A set of in situ X-ray diffraction apparatuses were built to enable simultaneous electrochemical H insertion and measurement of PdH[subscript x] composition. A comparison between aqueous and solid electrolytes, temperature, and thin film vs. bulk Pd revealed that thinner films, lower temperatures, and aqueous electrolytes tended to promote higher achievable H content, with the highest H:Pd ratio observed being 0.96 ± 0.02. These results not only show high H loading into Pd but also both reproducibility and a clear association between varied parameters and cell performance. In addition, the stability and performance of high temperature solid oxide electrolytes was investigated. A novel in situ calorimeter was constructed to enable the study of high temperature solid oxide electrolyte degradation while under operating conditions, similar to recent work in calorimetric analysis of battery stability. This calorimeter has a power detection sensitivity of 16.1 ± 11.7 mW, which is sufficient for detecting and quantifying many of the degradation and other side reactions that occur during high temperature operation of a solid oxide electrolyte in an electrochemical cell. This apparatus provides a tool needed to assess stability and life of solid oxide electrolytes under operation, a critical component to developing higher performing solid oxide electrochemical devices.
by David Y. Young.
S.M.
S.M. Massachusetts Institute of Technology, Department of Materials Science and Engineering
Dorenkamp, Yvonne Jeannette. "Inelastic H-Atom scattering from ultra-thin films." Doctoral thesis, Niedersächsische Staats- und Universitätsbibliothek Göttingen, 2018. http://hdl.handle.net/11858/00-1735-0000-002E-E49B-7.
Повний текст джерелаGuardi, Giorgia. "Thickness effects on electrochemical and gas-phase hydrogen loading in magnesium thin films." Master's thesis, Alma Mater Studiorum - Università di Bologna, 2021. http://amslaurea.unibo.it/24841/.
Повний текст джерелаSiyambalapitiya, Chamila S. "Growth and physical properties of magnetite thin films." [Tampa, Fla] : University of South Florida, 2006. http://purl.fcla.edu/usf/dc/et/SFE0001676.
Повний текст джерелаXia, Zhenbo. "Surface Forces in Thin Liquid Films of H-Bonding Liquids Confined between Hydrophobic Surfaces." Diss., Virginia Tech, 2015. http://hdl.handle.net/10919/64255.
Повний текст джерелаPh. D.
Pepenene, Refuoe Donald. "Macroscopic and Microscopic surface features of Hydrogenated silicon thin films." University of the Western Cape, 2018. http://hdl.handle.net/11394/6414.
Повний текст джерелаAn increasing energy demand and growing environmental concerns regarding the use of fossil fuels in South Africa has led to the challenge to explore cheap, alternative sources of energy. The generation of electricity from Photovoltaic (PV) devices such as solar cells is currently seen as a viable alternative source of clean energy. As such, crystalline, amorphous and nanocrystalline silicon thin films are expected to play increasingly important roles as economically viable materials for PV development. Despite the growing interest shown in these materials, challenges such as the partial understanding of standardized measurement protocols, and the relationship between the structure and optoelectronic properties still need to be overcome.
Castro, Galnares Sebastián. "Control of morphology for enhanced electronic transport in PECVD-grown a-Si : H Thin Films." Thesis, Massachusetts Institute of Technology, 2010. http://hdl.handle.net/1721.1/62528.
Повний текст джерелаCataloged from PDF version of thesis.
Includes bibliographical references (p. 85-88).
Solar cells have become an increasingly viable alternative to traditional, pollution causing power generation methods. Although crystalline silicon (c-Si) modules make up most of the market, thin films such as hydrogenated amorphous silicon (a-Si:H) are attractive for use in solar cell modules because of the capacity to fabricate cells with much less material. However, several challenges exist in making this material a more practical alternative to c-Si; despite having superior optical absorption properties, a-Si:H suffers in electronic transport, having a hole mobility 3-7 orders of magnitude less than that of c-Si. In the MOSFET transistor industry, carrier speeds and thus mobilities of c-Si were improved through the application of stress in the material. This work hypothesizes that a similar application of stress on a-Si:H thin films can enhance this material's hole mobility. A comprehensive study of the parameter space for a plasma enhanced chemical vapor deposition technique used to produce a-Si:H is performed. This enables the control of stress within the deposited film, from compressive to tensile; the mechanical limits of the material resulting in buckling and delamination failure are observed. Further characterization of a-Si:H thin films with different levels of engineered stress was performed; an analysis of the films' surface using AFM measurements to calculate a fractal dimension for each did not result in a significant descriptor of the surfaces' domain distribution. This work includes a detailed analysis of the theory of time-of-flight for measuring carrier mobility in thin film materials, and the system requirements needed to perform them.
by Sebastiián Castro Galnares.
S.M.
Le, Thi Ha-Linh. "Molecular dynamics simulations of H-induced plasma processes and cluster-catalyzed epitaxial growth of thin silicon films." Palaiseau, Ecole polytechnique, 2014. https://tel.archives-ouvertes.fr/pastel-00985657/document.
Повний текст джерелаThree different processes taking place in a plasma reactor; namely, heating and melting of plasma-born hydrogenated silicon clusters by reactions with atomic hydrogen, hydrogen-induced healing of cluster-damaged silicon surfaces, and cluster-catalyzed epitaxial growth of thin silicon films have been investigated by means of molecular dynamics simulations. Two plasma-born hydrogenated silicon clusters representing amorphous and crystalline structures are chosen to be exposed to atomic hydrogen as in a realistic plasma reactor. We investigate quantitatively how the clusters heat up and melt by the subsequent reactions with H-atoms. A silicon surface which was partly damaged by a too violent cluster impact has been treated by hydrogen atoms. We have observed that the ill-defined silicon surface is rearranged to its initial crystalline structure after the exposure with atomic hydrogen if the appropriate H-atom flux is chosen; i. E. , due to the surface reaction dynamics with hydrogen atoms, the silicon atoms of the investigated hydrogenated silicon cluster are positioned in an epitaxial surface structure. We have performed an in-depth study of the deposition dynamics of hydrogenated silicon clusters on a crystalline silicon substrate by controlling the parameters governing the cluster surface deposition. We have found that epitaxial growth of thin silicon films can be obtained from cluster deposition if the impact energies are sufficiently high for cluster atoms and surface atoms touching the cluster to undergo a phase transition to the liquid state before being recrystallized in an epitaxial order. Yet more strikingly, by applying a non-normal incidence angle for the impinging clusters, the epitaxial growth efficiency could considerably be enhanced. Those findings are crucially important to improve the high-speed growth of epitaxial silicon thin films at low temperatures using Plasma-Enhanced Chemical Vapor Deposition (PECVD) techniques for industrial applications
Zeilmann, Nina [Verfasser], and Rainer H. [Akademischer Betreuer] Fink. "Microscopic and microspectroscopic insights into organic thin films for organic electronic applications / Nina Zeilmann. Gutachter: Rainer H. Fink." Erlangen : Friedrich-Alexander-Universität Erlangen-Nürnberg (FAU), 2016. http://d-nb.info/1085634221/34.
Повний текст джерелаBauer, Hans [Verfasser], Christian H. [Akademischer Betreuer] Back, and Christoph [Akademischer Betreuer] Strunk. "Linear and nonlinear magnetization dynamics in thin ferromagnetic films and nanostructures / Hans Bauer. Betreuer: Christian H. Back ; Christoph Strunk." Regensburg : Universitätsbibliothek Regensburg, 2015. http://d-nb.info/1072820536/34.
Повний текст джерелаКниги з теми "H Thin Films"
Senoussaoui, Nadia. Einfluss der Oberflächenstrukturierung auf die optischen Eigenschaften der Dünnschichtsolarzellen auf der Basis von a-Si : H und [mu]c-Si: H. Jülich: Forschungszentrum Jülich, Zentralbibliothek, 2004.
Знайти повний текст джерелаSymposium H on Laser Processing of Surfaces and Thin Films (1996 Strasbourg, France). Laser processing of surfaces and thin films: Proceedings of Symposium H on Laser Processing of Surfaces and Thin Films of the 1996 E-MRS Spring Conference, Strasbourg, France, June 4-7, 1996. Amsterdam: Elsevier, 1997.
Знайти повний текст джерелаC-MRS International Conference (1990 Beijing, China). Thin films and beam-solid interactions: Proceedings of the symposia I, Thin films and H, Laser and particle-beam interactions with solids of the C-MRS International 1990 Conference, Beijing, China, 18-22 June 1990. Edited by Huang Liji and Chinese Materials Research Society. Amsterdam: North-Holland, 1991.
Знайти повний текст джерелаLaser processing of surfaces and thin films: Proceedings of symposium H of the 1996 E-MRS Spring conference, Strasbourg, France, June 4-7, 1996. 1997.
Знайти повний текст джерелаJackson, Robert. This Southern Advent. Oxford University Press, 2017. http://dx.doi.org/10.1093/acprof:oso/9780190660178.003.0002.
Повний текст джерелаTowlson, Jon. Candyman. Liverpool University Press, 2018. http://dx.doi.org/10.3828/liverpool/9781911325543.001.0001.
Повний текст джерелаFoltz, Jonathan. Out of Focus. Oxford University Press, 2017. http://dx.doi.org/10.1093/oso/9780190676490.003.0004.
Повний текст джерелаPapanikolaou, Dimitris. Greek Weird Wave. Edinburgh University Press, 2020. http://dx.doi.org/10.3366/edinburgh/9781474436311.001.0001.
Повний текст джерелаFoltz, Jonathan. The Novel after Film. Oxford University Press, 2017. http://dx.doi.org/10.1093/oso/9780190676490.001.0001.
Повний текст джерелаBrown, Matthew H. Indirect Subjects. Duke University Press, 2021. http://dx.doi.org/10.1215/9781478021506.
Повний текст джерелаЧастини книг з теми "H Thin Films"
Tay, Roland Yingjie. "A New Single-Source Precursor for Monolayer h-BN and h-BCN Thin Films." In Chemical Vapor Deposition Growth and Characterization of Two-Dimensional Hexagonal Boron Nitride, 99–115. Singapore: Springer Singapore, 2018. http://dx.doi.org/10.1007/978-981-10-8809-4_7.
Повний текст джерелаMandelis, A., R. E. Wagner, K. Ghandi, R. Baltman, and Phat Dao. "Photopyroelectric Spectroscopy (PPES) of a-Si: H Thin Films on Quartz." In Photoacoustic and Photothermal Phenomena II, 110–12. Berlin, Heidelberg: Springer Berlin Heidelberg, 1990. http://dx.doi.org/10.1007/978-3-540-46972-8_26.
Повний текст джерелаIonescu, M., Bryce Richards, Keith McIntosh, R. Siegele, E. Stelcer, D. Cohen, and Tara Chandra. "Hydrogen Measurements in SiNx: H/Si Thin Films by ERDA." In THERMEC 2006, 3551–56. Stafa: Trans Tech Publications Ltd., 2007. http://dx.doi.org/10.4028/0-87849-428-6.3551.
Повний текст джерелаLee, Eun Soo, Rachmat Adhi Wibowo, and Kyoo Ho Kim. "Highly c-Axis Oriented Al-Doped ZnO Thin Films Grown in Premixed H2/Ar Sputtering Gas." In Advanced Materials and Processing IV, 215–18. Stafa: Trans Tech Publications Ltd., 2007. http://dx.doi.org/10.4028/0-87849-466-9.215.
Повний текст джерелаGüneş, Mehmet. "Native and Light Induced Defect States in Wide Band Gap Hydrogenated Amorphous Silicon-Carbon(a-Si1-X Cx :H) Alloy Thin Films." In Diamond Based Composites, 285–99. Dordrecht: Springer Netherlands, 1997. http://dx.doi.org/10.1007/978-94-011-5592-2_24.
Повний текст джерелаShi, K. Y., L. L. Guo, H. X. Liu, L. Zou, and S. F. Ying. "Preparation and Optical Properties of Thin-Films of Layered Perovskite-Type Hybrid Compounds (CnH2n+1 NH3)2 PbX4." In Solid State Phenomena, 119–22. Stafa: Trans Tech Publications Ltd., 2006. http://dx.doi.org/10.4028/3-908451-18-3.119.
Повний текст джерелаZhao, Zhanxia, Min Li, and Zhongquan Ma. "Theoretical Study of Nc-Si: H Thin Film by Dft Method and Phonon Confine Model." In Proceedings of ISES World Congress 2007 (Vol. I – Vol. V), 1261–63. Berlin, Heidelberg: Springer Berlin Heidelberg, 2008. http://dx.doi.org/10.1007/978-3-540-75997-3_254.
Повний текст джерелаSohn, Hong Lae, Young Tae Cho, and Bong Ju Lee. "Measurement of Carboxyl Group Separated from a Thin Film Copolymerized by Low-Temperature Plasma at Atmospheric Pressure of C2H2 and CO2." In Advanced Nondestructive Evaluation I, 1332–35. Stafa: Trans Tech Publications Ltd., 2006. http://dx.doi.org/10.4028/0-87849-412-x.1332.
Повний текст джерелаLee, Keun Woo, Keun Jun Kim, Woo Ho Jeong, Tae Yong Park, and Hyeong Tag Jeon. "Cobalt Thin Film Deposited by Remote Plasma Atomic Layer Deposition Method Using C12H10O6(Co)2 and CpCo(CO)2." In Solid State Phenomena, 359–62. Stafa: Trans Tech Publications Ltd., 2007. http://dx.doi.org/10.4028/3-908451-31-0.359.
Повний текст джерелаChebwogen, Judith, and Christopher Mkirema Maghanga. "Fabrication and Characterization of Cobalt-Pigmented Anodized Zinc for Photocatalytic Application." In Thin Films. IntechOpen, 2021. http://dx.doi.org/10.5772/intechopen.93790.
Повний текст джерелаТези доповідей конференцій з теми "H Thin Films"
Albert Schultz, J., Howard K. Schmidt, P. Terrence Murray, and Alex Ignatiev. "Surface analysis of H,C,O,Y,Ba, and Cu on pressed and laser-evaporated YBCO." In Topical conference on high tc superconducting thin films, devices, and applications. AIP, 1989. http://dx.doi.org/10.1063/1.37969.
Повний текст джерелаSingh, S. K., and H. Ishiwara. "Bismuth ferrite Thin Films for Advanced FeRAM Devices." In 2005 International Conference on Solid State Devices and Materials. The Japan Society of Applied Physics, 2005. http://dx.doi.org/10.7567/ssdm.2005.h-8-3.
Повний текст джерелаMiyazaki, H., S. Odaka, S. Tanaka, H. Goto, K. Tsukagoshi, A. Kanda, Y. Ootuka, and Y. Aoyagi. "Thickness-dependent Resistance Change of Dual-gated Thin Graphite Films." In 2008 International Conference on Solid State Devices and Materials. The Japan Society of Applied Physics, 2008. http://dx.doi.org/10.7567/ssdm.2008.h-10-1.
Повний текст джерелаOta, Y., T. Maekawa, O. Matsushima, H. Sekiguchi, T. Maeda, T. Fujii, D. Ohnishi, H. Takasu, and S. Niki. "Novel High-sensitivity Broadband Image Sensor with CIGS Thin Films." In 2012 International Conference on Solid State Devices and Materials. The Japan Society of Applied Physics, 2012. http://dx.doi.org/10.7567/ssdm.2012.h-1-4.
Повний текст джерелаYamagiwa, H., D. Goto, T. Namazu, T. Takeuchi, K. Murakami, Y. Kawashimo, T. Takano, K. Yoshiki, and S. Inoue. "MEMS Resonance Test for Mechanical Characterization of Nano-Scale Thin Films." In 2010 International Conference on Solid State Devices and Materials. The Japan Society of Applied Physics, 2010. http://dx.doi.org/10.7567/ssdm.2010.h-9-3l.
Повний текст джерелаZaitsev, D. V., and O. A. Kabov. "Microgap Cooling Technique Based on Evaporation of Thin Liquid Films." In ASME 2009 InterPACK Conference collocated with the ASME 2009 Summer Heat Transfer Conference and the ASME 2009 3rd International Conference on Energy Sustainability. ASMEDC, 2009. http://dx.doi.org/10.1115/interpack2009-89318.
Повний текст джерелаLiu, Xu, Xong-bin Chen, Pei-fu Gu, Yong-hong Ye, and Jing-fa Tang. "A study of Electrochromic thin films and Devices by Photothermal Deflection Technique." In Optical Interference Coatings. Washington, D.C.: Optica Publishing Group, 1995. http://dx.doi.org/10.1364/oic.1995.wb4.
Повний текст джерелаMota, R. P., I. A. Perrenoud, R. Y. Honda, M. A. Algatti, M. E. Kayama, K. G. Kostov, T. Sadahito China, and N. C. Cruz. "Biocompatible thin films obtained from Heparim-methane plasma process." In 13th International Conference on Plasma Surface Engineering September 10 - 14, 2012, in Garmisch-Partenkirchen, Germany. Linköping University Electronic Press, 2013. http://dx.doi.org/10.3384/wcc2.368-371.
Повний текст джерелаKatti, V. R., Manmeet Kaur, K. P. Muthe, A. K. Dua, S. C. Gadkari, S. K. Gupta, and Vinod C. Sahni. "H 2 S sensors based on chemically treated SnO 2 :Pd thin films." In Smart Materials, Structures, and Systems, edited by S. Mohan, B. Dattaguru, and S. Gopalakrishnan. SPIE, 2003. http://dx.doi.org/10.1117/12.514828.
Повний текст джерелаMao, S. C., Y. L. Xu, and G. Lu. "Correspondence relation between [N-H]/[Si-H] ratio and their optical loss properties in silicon nitride thin films." In 2009 4th IEEE Conference on Industrial Electronics and Applications (ICIEA). IEEE, 2009. http://dx.doi.org/10.1109/iciea.2009.5138817.
Повний текст джерелаЗвіти організацій з теми "H Thin Films"
Zweibel, K., P. Moskowitz, and V. Fthenakis. Thin-film cadmium telluride photovoltaics: ES and H issues, solutions, and perspectives. Office of Scientific and Technical Information (OSTI), February 1998. http://dx.doi.org/10.2172/578669.
Повний текст джерела