Добірка наукової літератури з теми "Growth defects"
Оформте джерело за APA, MLA, Chicago, Harvard та іншими стилями
Ознайомтеся зі списками актуальних статей, книг, дисертацій, тез та інших наукових джерел на тему "Growth defects".
Біля кожної праці в переліку літератури доступна кнопка «Додати до бібліографії». Скористайтеся нею – і ми автоматично оформимо бібліографічне посилання на обрану працю в потрібному вам стилі цитування: APA, MLA, «Гарвард», «Чикаго», «Ванкувер» тощо.
Також ви можете завантажити повний текст наукової публікації у форматі «.pdf» та прочитати онлайн анотацію до роботи, якщо відповідні параметри наявні в метаданих.
Статті в журналах з теми "Growth defects"
Scandale, Eugenio, Sergio Lucchesi, and Giorgio Graziani. "Growth defects and growth marks in pegmatite beryls." European Journal of Mineralogy 2, no. 3 (June 21, 1990): 305–12. http://dx.doi.org/10.1127/ejm/2/3/0305.
Повний текст джерелаAgrosí, Giovanna, Eugenio Scandale, and Maria Arcangela Digennaro. "Growth defects of a melanite crystal." Neues Jahrbuch für Mineralogie - Abhandlungen 176, no. 1 (February 26, 2001): 89–107. http://dx.doi.org/10.1127/njma/176/2001/89.
Повний текст джерелаAgrosì, Giovanna, Gioacchino Tempesta, Eugenio Scandale, and Jeff W. Harris. "Growth and post-growth defects in a diamond from Finsch mine (South Africa)." European Journal of Mineralogy 25, no. 4 (December 20, 2013): 551–59. http://dx.doi.org/10.1127/0935-1221/2013/0025-2301.
Повний текст джерелаGao, Jiang-Dong, Jian-Li Zhang, Xin Zhu, Xiao-Ming Wu, Chun-Lan Mo, Shuan Pan, Jun-Lin Liu, and Feng-Yi Jiang. "Detailed surface analysis of V-defects in GaN films on patterned silicon(111) substrates by metal–organic chemical vapour deposition." Journal of Applied Crystallography 52, no. 3 (May 31, 2019): 637–42. http://dx.doi.org/10.1107/s1600576719005521.
Повний текст джерелаJones, D. P., and T. R. Leax. "Fatigue Crack Growth Testing of Sub-Clad Defects." Journal of Pressure Vessel Technology 121, no. 3 (August 1, 1999): 269–75. http://dx.doi.org/10.1115/1.2883702.
Повний текст джерелаHens, Philip, Julian Müller, Günter Wagner, Rickard Liljedahl, Erdmann Spiecker, and Mikael Syväjärvi. "Defect Generation and Annihilation in 3C-SiC-(001) Homoepitaxial Growth by Sublimation." Materials Science Forum 740-742 (January 2013): 283–86. http://dx.doi.org/10.4028/www.scientific.net/msf.740-742.283.
Повний текст джерелаMaerten, Thibault, Cédric Jaoul, Roland Oltra, Patrice Duport, Christophe Le Niniven, Pascal Tristant, Frédéric Meunier, and Olivier Jarry. "Micrometric Growth Defects of DLC Thin Films." C — Journal of Carbon Research 5, no. 4 (November 14, 2019): 73. http://dx.doi.org/10.3390/c5040073.
Повний текст джерелаEverson, M. P., and M. A. Tamor. "Investigation of growth rates and morphology for diamond growth by chemical vapor deposition." Journal of Materials Research 7, no. 6 (June 1992): 1438–44. http://dx.doi.org/10.1557/jmr.1992.1438.
Повний текст джерелаKirste, Lutz, Karolina Grabianska, Robert Kucharski, Tomasz Sochacki, Boleslaw Lucznik, and Michal Bockowski. "Structural Analysis of Low Defect Ammonothermally Grown GaN Wafers by Borrmann Effect X-ray Topography." Materials 14, no. 19 (September 22, 2021): 5472. http://dx.doi.org/10.3390/ma14195472.
Повний текст джерелаSugiyama, Naohiro, Masanori Yamada, Yasushi Urakami, Masakazu Kobayashi, Takashi Masuda, Keisuke Shigetoh, Itaru Gunjishima, Fusao Hirose, and Shoichi Onda. "Characterization of Vacant Broken Line Defects in A-Face Grown Crystals of Silicon Carbide." Materials Science Forum 778-780 (February 2014): 386–89. http://dx.doi.org/10.4028/www.scientific.net/msf.778-780.386.
Повний текст джерелаДисертації з теми "Growth defects"
Chiang, Chang-Yang. "Electron microscopic studies of crystal growth and defects in inorganic solids." Thesis, University of St Andrews, 2017. http://hdl.handle.net/10023/12026.
Повний текст джерелаBiswas, Barnali. "Growth defects in CrN/NbN coatings deposited by HIPIMS/UBM techniques." Thesis, Sheffield Hallam University, 2017. http://shura.shu.ac.uk/18154/.
Повний текст джерелаCristiano, Filadelfo. "Extended defects in SiGe device structures formed by ion implantation." Thesis, University of Surrey, 1998. http://epubs.surrey.ac.uk/843871/.
Повний текст джерелаKadhim, N. J. "Morphological imperfections associated with molecular beam epitaxial growth of GaAs layers." Thesis, University of Hertfordshire, 1987. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.377702.
Повний текст джерелаLi, Lan. "Ab-initio simulations of graphite defects and growth mechanisms of carbon nanotubes." Thesis, University of Cambridge, 2006. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.614271.
Повний текст джерелаGolea, Mostefa. "AB(2)C(4) semiconducting compounds crystal growth, intrinsic defects and optical properties." Thesis, University of Ottawa (Canada), 1988. http://hdl.handle.net/10393/5374.
Повний текст джерелаChen, Jhewn-Kuang. "The role of defects during precipitate growth in a Ni-45wt% Cr alloy." Diss., This resource online, 1995. http://scholar.lib.vt.edu/theses/available/etd-06062008-162241/.
Повний текст джерелаOest, Megan Elizabeth. "Dual Osteogenic and Angiogenic Growth Factor Delivery as a Treatment for Segmental Bone Defects." Diss., Georgia Institute of Technology, 2007. http://hdl.handle.net/1853/16264.
Повний текст джерелаRyningen, Birgit. "Formation and growth of crystal defects in directionally solidified multicrystalline silicon for solar cells." Doctoral thesis, Norges teknisk-naturvitenskapelige universitet, Institutt for materialteknologi, 2008. http://urn.kb.se/resolve?urn=urn:nbn:no:ntnu:diva-4980.
Повний текст джерелаFarzana, Esmat. "Defects and Schottky Contacts in β-Ga2O3:Properties, Influence of Growth Method and Irradiation". The Ohio State University, 2019. http://rave.ohiolink.edu/etdc/view?acc_num=osu1555495732936101.
Повний текст джерелаКниги з теми "Growth defects"
D, Zolotkov V., Mordi͡u︡k V. S, and Smirnov, Leonid Stepanovich, fl. 1979-, eds. Rostovye i radiat͡s︡ionnye defekty kristallov li͡u︡minoforov dli͡a︡ istochnikov sveta. Novosibirsk: Izd-vo "Nauka," Sibirskoe otd-nie, 1986.
Знайти повний текст джерелаGabetta, G. Application of a two-mechanism model for environmentally-assisted crack growth. Washington, DC: Division of Engineering Safety, Office of Nuclear Regulatory Research, U.S. Nuclear Regulatory Commission, 1986.
Знайти повний текст джерелаGabetta, G. Application of a two-mechanism model for environmentally-assisted crack growth. Washington, DC: Division of Engineering Safety, Office of Nuclear Regulatory Research, U.S. Nuclear Regulatory Commission, 1986.
Знайти повний текст джерелаGabetta, G. Application of a two-mechanism model for environmentally-assisted crack growth. Washington, DC: Division of Engineering Safety, Office of Nuclear Regulatory Research, U.S. Nuclear Regulatory Commission, 1986.
Знайти повний текст джерелаMichael, Dudley, and Materials Research Society Meeting, eds. Silicon carbide 2006--materials, processing, and devices: Symposium held April 18-20, 2006, San Francisco, California, U.S.A. Warrendale, Pa: Materials Research Society, 2006.
Знайти повний текст джерелаNykänen, Timo. Mk-factor equations and crack growth simulations for fatigue of fillet-welded t-joints. Lappeenranta: Lappeenranta University of Technology, 1993.
Знайти повний текст джерелаWeingartner, D. H. Variations in the growth and defect of aspen (Populus tremuloides Michx.) clones in Northern Ontario. Ontario: Ministry of Natural Resources, 1985.
Знайти повний текст джерелаBarney, Craig. Fatigue crack growth from unbridged defects in continuous fibre reinforced titanium metal matrix composites. Birmingham: University of Birmingham, 1995.
Знайти повний текст джерелаTriboulet, R., and P. Siffert. CdTe and related compounds: Physics, defects, hetero- and nanostructures, crystal growth surfaces and applications. Edited by ScienceDirect (Online service). Oxford: Elsevier, 2010.
Знайти повний текст джерелаInternational, Symposium on High Purity Silicon (9th 2006 Cancún Mexico). High purity silicon 9. Pennington, NJ: Electrochemical Society, 2006.
Знайти повний текст джерелаЧастини книг з теми "Growth defects"
Vere, A. W. "Defects in Crystals." In Crystal Growth, 29–65. Boston, MA: Springer US, 1987. http://dx.doi.org/10.1007/978-1-4757-9897-5_3.
Повний текст джерелаBuzynin, A. N., N. I. Bletskan, Yu N. Kuznetsov, and N. N. Sheftal’. "Growth Defects in Semiconductor Crystals." In Growth of Crystals, 291–300. Boston, MA: Springer US, 1986. http://dx.doi.org/10.1007/978-1-4615-7119-3_29.
Повний текст джерелаPhillips, John A., Angel Ferrandez, Herwig Frisch, Ruth Illig, and Klaus Zuppinger. "Defects of Growth Hormone Genes." In Human Growth Hormone, 211–26. Boston, MA: Springer US, 1986. http://dx.doi.org/10.1007/978-1-4615-7201-5_18.
Повний текст джерелаBuzynin, A. N., A. E. Luk’yanov, V. V. Osiko, and V. M. Tatarintsev. "Electrically Active Defects of Silicon Crystals." In Growth of Crystals, 151–62. Boston, MA: Springer US, 1993. http://dx.doi.org/10.1007/978-1-4615-2379-6_12.
Повний текст джерелаMalaquias, Alexsandra C., and Alexander A. L. Jorge. "Growth Defects in Noonan Syndrome." In Handbook of Growth and Growth Monitoring in Health and Disease, 2201–15. New York, NY: Springer New York, 2011. http://dx.doi.org/10.1007/978-1-4419-1795-9_131.
Повний текст джерелаTetlow, Holly Alexandra. "Removing Defects: Healing Single Vacancy Defects." In Theoretical Modeling of Epitaxial Graphene Growth on the Ir(111) Surface, 143–60. Cham: Springer International Publishing, 2017. http://dx.doi.org/10.1007/978-3-319-65972-5_7.
Повний текст джерелаIshimoto, Shin-ichi. "Microtia and Sensory Defects in Growth." In Handbook of Growth and Growth Monitoring in Health and Disease, 1853–65. New York, NY: Springer New York, 2011. http://dx.doi.org/10.1007/978-1-4419-1795-9_112.
Повний текст джерелаBergamaschi, Rosalba, Cristina Bergonzoni, Laura Mazzanti, Emanuela Scarano, Francesca Mencarelli, Valentina Rosetti, Francesca Messina, Lorenzo Iughetti, and Alessandro Cicognani. "Hearing Growth Defects in Turner Syndrome." In Handbook of Growth and Growth Monitoring in Health and Disease, 1437–44. New York, NY: Springer New York, 2011. http://dx.doi.org/10.1007/978-1-4419-1795-9_86.
Повний текст джерелаMazenko, Gene F. "Introduction to Growth Kinetics Problems." In Formation and Interactions of Topological Defects, 63–92. Boston, MA: Springer US, 1995. http://dx.doi.org/10.1007/978-1-4615-1883-9_3.
Повний текст джерелаPunin, Yu O. "Formation of Autodeformation Defects in Crystal Growth from Solution." In Growth of Crystals, 121–31. Boston, MA: Springer US, 1987. http://dx.doi.org/10.1007/978-1-4615-7122-3_11.
Повний текст джерелаТези доповідей конференцій з теми "Growth defects"
Evans, S., and P. Morey. "173. Construction Defects and Microbial Growth." In AIHce 2002. AIHA, 2002. http://dx.doi.org/10.3320/1.2766094.
Повний текст джерелаFenyvesi, L., H. Lu, and T. R. Jack. "Prediction of Corrosion Defect Growth on Operating Pipelines." In 2004 International Pipeline Conference. ASMEDC, 2004. http://dx.doi.org/10.1115/ipc2004-0268.
Повний текст джерелаRudolph, Peter. "Fundamentals of Defects in Crystals." In PERSPECTIVES ON INORGANIC, ORGANIC, AND BIOLOGICAL CRYSTAL GROWTH: FROM FUNDAMENTALS TO APPLICATIONS: Basedon the lectures presented at the 13th International Summer School on Crystal Growth. AIP, 2007. http://dx.doi.org/10.1063/1.2751910.
Повний текст джерелаDessein, Thomas, Brent Ayton, and Travis Sera. "Characterizing Corrosion Defects With Apparent High Growth Rates on Transmission Pipelines." In 2020 13th International Pipeline Conference. American Society of Mechanical Engineers, 2020. http://dx.doi.org/10.1115/ipc2020-9572.
Повний текст джерелаDann, Markus R., Marc A. Maes, and Mamdouh M. Salama. "Pipeline Corrosion Growth Modeling for In-Line Inspection Data Using a Population-Based Approach." In ASME 2015 34th International Conference on Ocean, Offshore and Arctic Engineering. American Society of Mechanical Engineers, 2015. http://dx.doi.org/10.1115/omae2015-41016.
Повний текст джерелаBeye, A. C., G. Neu, J. P. Contour, J. C. Garcia, and B. Gil. "Growth-Induced Complex Defects In GaAs Grown By Molecular Beam Epitaxy." In 1988 Semiconductor Symposium, edited by Orest J. Glembocki, Fred H. Pollak, and Fernando A. Ponce. SPIE, 1988. http://dx.doi.org/10.1117/12.947427.
Повний текст джерелаRybaczuk, Marek, and Adam Cetera. "Nonhomogeneous Fractal Growth of Fatigue Defects in Materials." In SAE Brasil International Conference on Fatigue. 400 Commonwealth Drive, Warrendale, PA, United States: SAE International, 2001. http://dx.doi.org/10.4271/2001-01-4057.
Повний текст джерелаLogofatu, C., I. Licea, N. Mincu, and Cristiana E. A. Grigorescu. "Optical homogeneity and growth defects in sapphire crystals grown by different methods." In ROMOPTO 2000: Sixth Conference on Optics, edited by Valentin I. Vlad. SPIE, 2001. http://dx.doi.org/10.1117/12.432821.
Повний текст джерелаSnyder, Todd, D. H. Stone, and Joseph Kristan. "Wheel Flat and Out-of-Round Formation and Growth." In IEEE/ASME 2003 Joint Rail Conference. ASMEDC, 2003. http://dx.doi.org/10.1115/rtd2003-1659.
Повний текст джерелаZhang, Hongyu. "An initial study of the growth of eclipse defects." In the 2008 international workshop. New York, New York, USA: ACM Press, 2008. http://dx.doi.org/10.1145/1370750.1370785.
Повний текст джерелаЗвіти організацій з теми "Growth defects"
Shechtman, D., J. L. Hutchison, L. H. Robins, E. N. Farabaugh, and A. Feldman. Growth Defects in Diamond Films. Fort Belvoir, VA: Defense Technical Information Center, July 1992. http://dx.doi.org/10.21236/ada253618.
Повний текст джерелаKlein, William. Collaborative Research: failure of RockMasses from Nucleation and Growth of Microscopic Defects and Disorder. Office of Scientific and Technical Information (OSTI), September 2016. http://dx.doi.org/10.2172/1323903.
Повний текст джерелаAwe, Thomas James. Benchmarking 3D-MHD simulations of electrothermal instability growth by studying z-pinches with engineered defects. Office of Scientific and Technical Information (OSTI), October 2019. http://dx.doi.org/10.2172/1572223.
Повний текст джерелаLi, Sheng S. Study of Grown-In Defects Verses Growth Parameters in GaAs and Al(x)Ga(1-x)AS Epitaxial Films Grown by LPE and MOCVD Techniques. Fort Belvoir, VA: Defense Technical Information Center, June 1985. http://dx.doi.org/10.21236/ada173736.
Повний текст джерелаMorgan, Caroline G. Theoretical Investigation of Point Defects and Defect Complexes in Low-Temperature-Grown GaAs. Fort Belvoir, VA: Defense Technical Information Center, December 1999. http://dx.doi.org/10.21236/ada387327.
Повний текст джерелаJander, Georg, and Daniel Chamovitz. Investigation of growth regulation by maize benzoxazinoid breakdown products. United States Department of Agriculture, January 2015. http://dx.doi.org/10.32747/2015.7600031.bard.
Повний текст джерелаMorgan, Caroline G. Augmented Student Participation in Theoretical Investigation of Point Defects and Defect Complexes in Low-Temperature-Grown GaAs. Fort Belvoir, VA: Defense Technical Information Center, June 2001. http://dx.doi.org/10.21236/ada405900.
Повний текст джерелаFabietti, L. M. R. Interface stability and defect formation during crystal growth. Office of Scientific and Technical Information (OSTI), January 1991. http://dx.doi.org/10.2172/5943509.
Повний текст джерелаBedair, S. M. Defect Reduction in Epitaxial Growth Using Superlattice Buffer Layers. Fort Belvoir, VA: Defense Technical Information Center, July 1988. http://dx.doi.org/10.21236/ada198409.
Повний текст джерелаVeilleux, Richard, and David Levy. Potato Germplasm Development for Warm Climates. United States Department of Agriculture, October 1992. http://dx.doi.org/10.32747/1992.7561057.bard.
Повний текст джерела