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Статті в журналах з теми "GaN Diodes"
RAZEGHI, MANIJEH. "GaN-BASED LASER DIODES." International Journal of High Speed Electronics and Systems 09, no. 04 (December 1998): 1007–80. http://dx.doi.org/10.1142/s0129156498000415.
Повний текст джерелаShashikala, B. N., and B. S. Nagabhushana. "Reduction of reverse leakage current at the TiO2/GaN interface in field plate Ni/Au/n-GaN Schottky diodes." Semiconductor Physics, Quantum Electronics and Optoelectronics 24, no. 04 (November 23, 2021): 399–406. http://dx.doi.org/10.15407/spqeo24.04.399.
Повний текст джерелаShugurov K.Yu., Mozharov A.M., Sapunov G.A., Fedorov V.V., Moiseev E.I., Blokhin S.A., Kuzmenkov A.G., and Mukhin I.S. "Microwave Schottky diodes based on single GaN nanowires." Technical Physics Letters 48, no. 8 (2022): 18. http://dx.doi.org/10.21883/tpl.2022.08.55053.19229.
Повний текст джерелаPolyntsev, Egor, Evgeny Erofeev, and Igor Yunusov. "The Influence of Design on Electrical Performance of AlGaN/GaN Lateral Schottky Barrier Diodes for Energy-Efficient Power Applications." Electronics 10, no. 22 (November 15, 2021): 2802. http://dx.doi.org/10.3390/electronics10222802.
Повний текст джерелаMatys, Maciej, Kazuki Kitagawa, Tetsuo Narita, Tsutomu Uesugi, Jun Suda, and Tetsu Kachi. "Mg-implanted vertical GaN junction barrier Schottky rectifiers with low on resistance, low turn-on voltage, and nearly ideal nondestructive breakdown voltage." Applied Physics Letters 121, no. 20 (November 14, 2022): 203507. http://dx.doi.org/10.1063/5.0106321.
Повний текст джерелаШугуров, К. Ю., А. М. Можаров, Г. А. Сапунов, В. В. Фёдоров, Э. И. Моисеев, С. А. Блохин, А. Г. Кузьменков та И. С. Мухин. "Сверхвысокочастотные диоды Шоттки на основе одиночных нитевидных нанокристаллов GaN". Письма в журнал технической физики 48, № 15 (2022): 22. http://dx.doi.org/10.21883/pjtf.2022.15.53127.19229.
Повний текст джерелаNomoto, Kazuki, Tohru Nakamura, Naoki Kaneda, Toshihiro Kawano, Tadayoshi Tsuchiya, and Tomoyoshi Mishima. "Large GaN p-n Junction Diodes of 3 mm in Diameter on Free-Standing GaN Substrates with High Breakdown Voltage." Materials Science Forum 717-720 (May 2012): 1299–302. http://dx.doi.org/10.4028/www.scientific.net/msf.717-720.1299.
Повний текст джерелаLee, Wen Zhao, Duu Sheng Ong, Kan Yeep Choo, Oktay Yilmazoglu, and Hans L. Hartnagel. "Monte Carlo evaluation of GaN THz Gunn diodes." Semiconductor Science and Technology 36, no. 12 (November 4, 2021): 125009. http://dx.doi.org/10.1088/1361-6641/ac2b4d.
Повний текст джерелаN’Dohi, Atse Julien Eric, Camille Sonneville, Soufiane Saidi, Thi Huong Ngo, Philippe De Mierry, Eric Frayssinet, Yvon Cordier, et al. "Micro-Raman Spectroscopy Study of Vertical GaN Schottky Diode." Crystals 13, no. 5 (April 22, 2023): 713. http://dx.doi.org/10.3390/cryst13050713.
Повний текст джерелаVostokov N. V., Drozdov M. N., Kraev S. A., Khrykin O. I., and Yunin P. A. "Effect of thermal annealing on the transport properties of Ti/AlGaN/GaN low-barrier Mott diodes." Semiconductors 56, no. 7 (2022): 455. http://dx.doi.org/10.21883/sc.2022.07.54641.04.
Повний текст джерелаДисертації з теми "GaN Diodes"
Li, Zonglin, and 李宗林. "Reliability study of InGaN/GaN light-emitting diode." Thesis, The University of Hong Kong (Pokfulam, Hong Kong), 2009. http://hub.hku.hk/bib/B43224155.
Повний текст джерелаLi, Zonglin. "Reliability study of InGaN/GaN light-emitting diode." Click to view the E-thesis via HKUTO, 2009. http://sunzi.lib.hku.hk/hkuto/record/B43224155.
Повний текст джерелаSharma, Nikhil. "Characterisation of InGaN/GaN light emitting diodes." Thesis, University of Cambridge, 2001. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.621315.
Повний текст джерелаWang, Ke, and 王科. "Some experimental studies of n-type GaN and Au/GaN contacts." Thesis, The University of Hong Kong (Pokfulam, Hong Kong), 2002. http://hub.hku.hk/bib/B26663612.
Повний текст джерелаBavencove, Anne-Laure. "Réalisation de diodes électroluminescentes à base de nanofils GaN." Thesis, Grenoble, 2012. http://www.theses.fr/2012GRENY037/document.
Повний текст джерелаThis thesis aims at studying the intrinsic properties of InGaN/GaN nanowires (NWs) in order to fabricate efficient light emitting diodes (LEDs). Two active region designs, obtained through different growth techniques, have been extensively investigated. Axial NW-based LEDs emitting from the blue to the red spectral range have been grown by MBE. In this case, single emitters present diameters typically smaller than 100 nm. MOCVD allowed the fabrication of LEDs emitting shorter wavelengths from Core/Shell heterostructures with typical dimensions in the micrometre range. In both cases, the spontaneous growth has been conducted on Silicon (111) highly conductive substrates in order to inject the current vertically into macroscopically contacted devices. Technological building blocks needed to fabricate LEDs have been investigated using a wide range of characterization techniques adapted for high aspect ratio structures. Thus, n-type (Silicon) and p-type (Magnesium) dopings have been assessed thanks to optical spectroscopy techniques, and these results have been confirmed by electrical measurements carried out on single wires. Furthermore, low temperature cathodoluminescence has been widely used to study the optical properties of InGaN-based active regions. After technological integration, electro-optical characterizations with spatial resolution down to the single wire level have revealed that device performances are mainly limited by the fluctuation of electrical and optical properties between single emitters
Xu, Hui Park Minseo. "Fabrication and electrical/optical characterization of bulk GaN-based Schottky diodes." Auburn, Ala, 2009. http://hdl.handle.net/10415/1871.
Повний текст джерелаFeng, Jian. "Power improvement of the InGaN/GaN LED /." View abstract or full-text, 2005. http://library.ust.hk/cgi/db/thesis.pl?ELEC%202005%20FENG.
Повний текст джерелаPope, Iestyn A. "Characerisation of Ingan gan quantum well light emitting diodes." Thesis, Cardiff University, 2004. http://orca.cf.ac.uk/55927/.
Повний текст джерелаWang, Xianghua, and 王向华. "Design and laser fabrication of GaN/sapphire light-emitting diodes." Thesis, The University of Hong Kong (Pokfulam, Hong Kong), 2010. http://hub.hku.hk/bib/B45143079.
Повний текст джерелаWatson, Scott. "High speed systems using GaN visible LEDs and laser diodes." Thesis, University of Glasgow, 2016. http://theses.gla.ac.uk/7205/.
Повний текст джерелаКниги з теми "GaN Diodes"
Scheibenzuber, Wolfgang G. GaN-Based Laser Diodes. Berlin, Heidelberg: Springer Berlin Heidelberg, 2012. http://dx.doi.org/10.1007/978-3-642-24538-1.
Повний текст джерелаNakamura, Shuji. The blue laser diode: GaN based light emitters and lasers. Berlin: Springer, 1997.
Знайти повний текст джерелаservice), SpringerLink (Online, ed. GaN-Based Laser Diodes: Towards Longer Wavelengths and Short Pulses. Berlin, Heidelberg: Springer Berlin Heidelberg, 2012.
Знайти повний текст джерелаF, Neumark Gertrude, Kuskovsky Igor L, and Jiang H. X, eds. Wide bandgap light emitting materials and devices. Weinheim: Wiley-VCH, 2007.
Знайти повний текст джерелаZhong hua min guo guang dian xue hui, ed. LED gong cheng shi ji chu gai nian yu ying yong: Fundamental and applications of LED engineers. Taibei Shi: Wu nan tu shu chu ban gong si, 2012.
Знайти повний текст джерелаSzweda, Roy. Gallium nitride & related wide bandgap materials & devices: A market & technology overview 1996-2001. Oxford, UK: Elsevier Advanced Technology, 1997.
Знайти повний текст джерелаYu, Chen Liang, and United States. National Aeronautics and Space Administration., eds. SiC-based gas sensors. [Washington, D.C: National Aeronautics and Space Administration, 1997.
Знайти повний текст джерела1949-, Gurevich Sergei A., Rosanov Nikolay N, Institut lazernoĭ fiziki SO RAN., and Society of Photo-optical Instrumentation Engineers., eds. Laser Optics 2003: Diode lasers and telecommunication systems : 30 June -4 July 2003, St. Petersburg, Russia. Bellingham, Wash., USA: SPIE, 2004.
Знайти повний текст джерелаB, Danilov Oleg, Institut lazernoĭ fiziki SO RAN., and Society of Photo-optical Instrumentation Engineers., eds. Laser Optics 2003: High-power gas lasers : 30 June-4 July 2003, St. Petersburg, Russia. Bellingham, Wash., USA: SPIE, 2004.
Знайти повний текст джерелаYu, Chen Liang, and United States. National Aeronautics and Space Administration., eds. Electronic and interfacial properties of Pd/6H-SiC Schottky diode gas sensors. [Washington, DC]: National Aeronautics and Space Administration, 1996.
Знайти повний текст джерелаЧастини книг з теми "GaN Diodes"
Jiang, Fengyi, Jianli Zhang, Qian Sun, and Zhijue Quan. "GaN LEDs on Si Substrate." In Light-Emitting Diodes, 133–70. Cham: Springer International Publishing, 2019. http://dx.doi.org/10.1007/978-3-319-99211-2_4.
Повний текст джерелаEinfeldt, S., S. Figge, T. BÖttcher, and D. Hommel. "GaN-Based Laser Diodes." In UV Solid-State Light Emitters and Detectors, 31–39. Dordrecht: Springer Netherlands, 2004. http://dx.doi.org/10.1007/978-1-4020-2103-9_3.
Повний текст джерелаXu, Ke, Miao Wang, Taofei Zhou, and Jianfeng Wang. "Homoepitaxy of GaN Light-Emitting Diodes." In Light-Emitting Diodes, 93–132. Cham: Springer International Publishing, 2019. http://dx.doi.org/10.1007/978-3-319-99211-2_3.
Повний текст джерелаScheibenzuber, Wolfgang G. "Short-Pulse Laser Diodes." In GaN-Based Laser Diodes, 67–84. Berlin, Heidelberg: Springer Berlin Heidelberg, 2012. http://dx.doi.org/10.1007/978-3-642-24538-1_7.
Повний текст джерелаScheibenzuber, Wolfgang G. "Introduction." In GaN-Based Laser Diodes, 1–4. Berlin, Heidelberg: Springer Berlin Heidelberg, 2012. http://dx.doi.org/10.1007/978-3-642-24538-1_1.
Повний текст джерелаScheibenzuber, Wolfgang G. "Basic Concepts." In GaN-Based Laser Diodes, 5–19. Berlin, Heidelberg: Springer Berlin Heidelberg, 2012. http://dx.doi.org/10.1007/978-3-642-24538-1_2.
Повний текст джерелаScheibenzuber, Wolfgang G. "Thermal Properties." In GaN-Based Laser Diodes, 21–28. Berlin, Heidelberg: Springer Berlin Heidelberg, 2012. http://dx.doi.org/10.1007/978-3-642-24538-1_3.
Повний текст джерелаScheibenzuber, Wolfgang G. "Light Propagation and Amplification in Laser Diodes from Violet to Green." In GaN-Based Laser Diodes, 29–36. Berlin, Heidelberg: Springer Berlin Heidelberg, 2012. http://dx.doi.org/10.1007/978-3-642-24538-1_4.
Повний текст джерелаScheibenzuber, Wolfgang G. "Semipolar Crystal Orientations for Green Laser Diodes." In GaN-Based Laser Diodes, 37–54. Berlin, Heidelberg: Springer Berlin Heidelberg, 2012. http://dx.doi.org/10.1007/978-3-642-24538-1_5.
Повний текст джерелаScheibenzuber, Wolfgang G. "Dynamics of Charge Carriers and Photons." In GaN-Based Laser Diodes, 55–66. Berlin, Heidelberg: Springer Berlin Heidelberg, 2012. http://dx.doi.org/10.1007/978-3-642-24538-1_6.
Повний текст джерелаТези доповідей конференцій з теми "GaN Diodes"
Chaney, Alexander, Meng Qi, S. M. Islam, Huili Grace Xing, and Debdeep Jena. "GaN tunnel switch diodes." In 2016 74th Annual Device Research Conference (DRC). IEEE, 2016. http://dx.doi.org/10.1109/drc.2016.7548409.
Повний текст джерелаKizilyalli, Isik C., Andrew Edwards, David Bour, Hemal Shah, Don Disney, and Hui Nie. "Very high performance GaN-on-GaN diodes." In 2013 IEEE Workshop on Wide Bandgap Power Devices and Applications (WiPDA). IEEE, 2013. http://dx.doi.org/10.1109/wipda.2013.6695550.
Повний текст джерелаNagahama, Shinichi, Naruhito Iwasa, Masayuki Senoh, Toshio Matsushita, Yasunobu Sugimoto, Hiroyuki Kiyoku, Tokuya Kozaki, et al. "GaN-based violet laser diodes." In Symposium on Integrated Optics, edited by Luke J. Mawst and Ramon U. Martinelli. SPIE, 2001. http://dx.doi.org/10.1117/12.429804.
Повний текст джерелаPavlidis, Georges, James Dallas, Sukwon Choi, Shyh-Chiang Shen, and Samuel Graham. "Steady State and Transient Thermal Characterization of Vertical GaN PIN Diodes." In ASME 2017 International Technical Conference and Exhibition on Packaging and Integration of Electronic and Photonic Microsystems collocated with the ASME 2017 Conference on Information Storage and Processing Systems. American Society of Mechanical Engineers, 2017. http://dx.doi.org/10.1115/ipack2017-74149.
Повний текст джерелаEvans, Keith. "Development of GaN Substrates for GaN Based Laser Diodes." In Photonic Applications Systems Technologies Conference. Washington, D.C.: OSA, 2007. http://dx.doi.org/10.1364/phast.2007.pwb2.
Повний текст джерелаKuball, M., Y. K. Song, A. V. Nurmikko, G. E. Bulman, K. Doverspike, S. T. Sheppard, T. W. Weeks, et al. "Gain Spectroscopy on InGaN/GaN Quantum Well Laser Diodes." In The European Conference on Lasers and Electro-Optics. Washington, D.C.: Optica Publishing Group, 1998. http://dx.doi.org/10.1364/cleo_europe.1998.ctug6.
Повний текст джерелаPerlin, P., T. Suski, L. Morona, S. Stanczyk, M. Leszczynski, P. Wisniewski, R. Czernecki, Stephen Najda, and D. Schiavon. "GaN laser diodes for quantum technologies." In Quantum Technologies and Quantum Information Science, edited by Mark T. Gruneisen, Miloslav Dusek, and John G. Rarity. SPIE, 2017. http://dx.doi.org/10.1117/12.2277001.
Повний текст джерелаErofeev, Evgeny V., and Ivan V. Fedin. "Fast switching GaN Schottky barrier diodes." In 2016 17th International Conference of Young Specialists on Micro/Nanotechnologies and Electron Devices (EDM). IEEE, 2016. http://dx.doi.org/10.1109/edm.2016.7538688.
Повний текст джерелаNajda, Stephen P., Piotr Perlin, Tadek Suski, Szymon Stanczyk, Mike Leszczynski, Dario Schiavon, Thomas Slight, et al. "GaN laser diodes for quantum sensing." In SPIE Future Sensing Technologies, edited by Christopher R. Valenta, Joseph A. Shaw, and Masafumi Kimata. SPIE, 2020. http://dx.doi.org/10.1117/12.2574595.
Повний текст джерелаDisney, Don, Hui Nie, Andrew Edwards, David Bour, Hemal Shah, and Isik C. Kizilyalli. "Vertical power diodes in bulk GaN." In 2013 25th International Symposium on Power Semiconductor Devices & IC's (ISPSD). IEEE, 2013. http://dx.doi.org/10.1109/ispsd.2013.6694455.
Повний текст джерелаЗвіти організацій з теми "GaN Diodes"
Ren, F., C. R. Abernathy, and J. D. MacKenzie. Dielectrics for GaN based MIS-diodes. Office of Scientific and Technical Information (OSTI), February 1998. http://dx.doi.org/10.2172/634115.
Повний текст джерелаWierer, J. J., Andrew A. Allerman, Jeramy Ray Dickerson, Michael William Moseley, Arthur J. Fischer, B. Bryant, Albert G. Baca, Michael Patrick King, Robert Kaplar, and Richard Peter Schneider. Vertical GaN PIN Diodes with 5 kV Avalanche Breakdown. Office of Scientific and Technical Information (OSTI), September 2015. http://dx.doi.org/10.2172/1221707.
Повний текст джерелаArmstrong, Andrew, and Daniel Feezell. High Voltage Regrown GaN P-N Diodes Enabled by Defect and Doping Control. Office of Scientific and Technical Information (OSTI), April 2022. http://dx.doi.org/10.2172/1862286.
Повний текст джерелаSpeck, James. Identification and Mitigation of Droop Mechanism in Gallium Nitride (GaN)-Based Light Emitting Diodes (LEDs) (Final Report). Office of Scientific and Technical Information (OSTI), September 2018. http://dx.doi.org/10.2172/1514275.
Повний текст джерелаChakraborty, Arpan, Aurelien David, Michael Grundmann, Anurag Tyagi, Michael Craven, Christophe Hurni, and Michael Cich. U.S. Department of Energy, National Energy Technology Laboratory Solid-State Lighting Core Technologies Light Emitting Diodes on Semipolar Bulk GaN Substrate with IQE > 80% at 150 A/cm2 and 100 0C. Office of Scientific and Technical Information (OSTI), March 2015. http://dx.doi.org/10.2172/1301906.
Повний текст джерелаSun, Steve, and Chuni Ghosh. Medical Gas Diagnosis Via Diode Laser Absorption Spectroscopy. Fort Belvoir, VA: Defense Technical Information Center, April 1995. http://dx.doi.org/10.21236/ada299343.
Повний текст джерелаBenner, Robert E., Lee M. Smith, Ming-Wei Pan, Carl W. Johnson, and Daniel D. Knowlton. Diode Laser Raman Scattering Prototype Gas-Phase Environmental Monitoring. Fort Belvoir, VA: Defense Technical Information Center, July 1999. http://dx.doi.org/10.21236/ada379586.
Повний текст джерелаHeflinger, D. G., M. B. Chang, and W. R. Fenner. High-Order Mode Dependencies in Gain-Guided Twin-Stripe Laser Diode Arrays. Fort Belvoir, VA: Defense Technical Information Center, February 1990. http://dx.doi.org/10.21236/ada220868.
Повний текст джерелаHeflinger, Donald G., and Wayne R. Fenner. Spectrally Resolved Near-Field Intensity Measurements from Gain-Guided Twin-Stripe Laser Diode Arrays. Fort Belvoir, VA: Defense Technical Information Center, November 1988. http://dx.doi.org/10.21236/ada201641.
Повний текст джерелаCamparo, James C., and Robert P. Frueholz. Exploration of the Potential Performance of Diode Laser-Pumped Gas Cell Atomic Frequency Standards. Fort Belvoir, VA: Defense Technical Information Center, September 1986. http://dx.doi.org/10.21236/ada175431.
Повний текст джерела