Готові списки джерел за темами / Gallium nitrate

Добірка наукової літератури з теми "Gallium nitrate"

Автор: Grafiati
Опубліковано: 10 грудня 2022
Оновлено: 28 січня 2023

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Статті в журналах з теми "Gallium nitrate"

1

Hughes, Thomas E., and Lea Ann Hansen. "Gallium Nitrate." Annals of Pharmacotherapy 26, no. 3 (March 1992): 354–62. http://dx.doi.org/10.1177/106002809202600310.

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OBJECTIVE: To evaluate the therapeutic role of gallium nitrate in the treatment of hypercalcemia associated with malignancy and related disease states. DATA SOURCES: A literature search of English-language studies involving gallium nitrate for the period 1966–1991 using MEDLINE and the bibliographies of relevant articles. STUDY SELECTION: Because of the limited number of studies, all clinical trials were reviewed, with particular emphasis on Phase III comparative trials. Related investigative studies on the pharmacology, pharmacokinetics, and toxicity of gallium nitrate were also reviewed. DATA EXTRACTION: Two appraisers independently abstracted data from available clinical trials and evaluated trial quality. RESULTS OF DATA SYNTHESIS: Two Phase III comparative trials evaluating gallium nitrate in the treatment of hypercalcemia of malignancy have been completed. Gallium nitrate was shown to be superior to both calcitonin and etidronate disodium, based on the comparative percentage of patients achieving normocalcemia and the subsequent duration of normocalcemia. Both trials employed similar methodology. Positive therapeutic effects of gallium nitrate have also been demonstrated in small, noncomparative trials for hypercalcemia associated with parathyroid carcinoma, Paget's disease of bone, and osteolytic bone metastases. CONCLUSIONS: Gallium nitrate is effective in the treatment of hypercalcemia associated with malignancy and is appropriate for formulary addition. In certain clinical situations, it may be clearly advantageous over such agents as calcitonin, plicamycin, and etidronate. Further investigation is needed to define the limitations of nephrotoxicity and the therapeutic potential for other indications. Further comparative clinical trials of gallium nitrate versus bisphosphonates and plicamycin could also help define its relative clinical benefit.
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Todd, Peter A., and Andrew Fitton. "Gallium Nitrate." Drugs 42, no. 2 (August 1991): 261–73. http://dx.doi.org/10.2165/00003495-199142020-00007.

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3

Chitambar, Christopher R. "Gallium nitrate revisited." Seminars in Oncology 30, no. 2 Suppl 5 (April 2003): 1–4. http://dx.doi.org/10.1016/s0093-7754(03)00169-6.

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Warrell, R. P., D. Lovett, F. A. Dilmanian, R. Schneider, and R. T. Heelan. "Low-dose gallium nitrate for prevention of osteolysis in myeloma: results of a pilot randomized study." Journal of Clinical Oncology 11, no. 12 (December 1993): 2443–50. http://dx.doi.org/10.1200/jco.1993.11.12.2443.

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PURPOSE Since osteolysis is a major cause of morbidity in myeloma, we conducted a pilot study to evaluate whether the addition of gallium nitrate to standard antimyeloma treatment could preserve or increase bone mass in patients with osteolytic disease. METHODS Patients stabilized on cytotoxic therapy were randomized to treatment with gallium nitrate for 6 months, or to observation only for the first 6 months followed by gallium nitrate treatment during the subsequent 6 months. Gallium nitrate was administered in monthly cycles by daily subcutaneous injections (30 mg/m2/d) for 2 weeks, followed by 2 weeks with no therapy, supplemented by an intravenous infusion (100 mg/m2/d) for 5 days every other month. RESULTS Paired 6-month comparisons were available for seven observation periods and 13 gallium nitrate treatment periods. Total-body calcium assessed by delayed-gamma neutron activation (DGNA) decreased in four of seven patients during observation, but increased in nine of 13 patients during gallium nitrate treatment; the mean difference in total-body calcium (TBCa) between the two groups at 6 months was 3%. Median regional bone density assessed by dual-photon absorptiometry (DPA) declined by 1.4% in patients under observation (range, +6.7% to -18.3%), but was unchanged during gallium nitrate treatment (median change, 0%; range, -10.5% to +14.4%). The group mean vertebral fracture index assessed by lateral spine x-rays decreased by 27% during observation compared with 2% during gallium nitrate treatment. Mean body height decreased by 0.57 inches in the observation group and .06 inches in the gallium nitrate group. Patient self-assessment of bone pain showed that seven of 12 gallium nitrate-treated patients rated themselves as experiencing major reductions in bone pain, compared with zero of seven patients who were observed. One episode of hypercalcemia occurred in a patient under observation. CONCLUSION Adjuvant treatment with low-dose gallium nitrate attenuates the rate of bone loss in myeloma and may be useful for ameliorating the consequences of skeletal morbidity in patients with cancer-related osteolysis.
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Csaky, Karl G., and Rafael C. Caruso. "Gallium Nitrate Optic Neuropathy." American Journal of Ophthalmology 124, no. 4 (October 1997): 567–68. http://dx.doi.org/10.1016/s0002-9394(14)70881-5.

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Ho, D. H., J. R. Lin, N. S. Brown, and R. A. Newman. "Bioavailability of gallium nitrate." European Journal of Pharmacology 183, no. 4 (July 1990): 1200. http://dx.doi.org/10.1016/0014-2999(90)94293-7.

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Warrell, R. P., W. K. Murphy, P. Schulman, P. J. O'Dwyer, and G. Heller. "A randomized double-blind study of gallium nitrate compared with etidronate for acute control of cancer-related hypercalcemia." Journal of Clinical Oncology 9, no. 8 (August 1991): 1467–75. http://dx.doi.org/10.1200/jco.1991.9.8.1467.

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Hypercalcemia is a major source of morbidity and mortality in patients with cancer. Gallium nitrate and the bisphosphonate, etidronate, are new agents that have recently become available for treatment of this disorder. To directly compare therapeutic effectiveness, we conducted a randomized, double-blind, multicenter study of gallium nitrate compared with etidronate for acute control of cancer-related hypercalcemia. Gallium nitrate was administered by continuous intravenous (IV) infusion at a dose of 200 mg/m2/d. Etidronate was administered as a 4-hour IV infusion at a dose of 7.5 mg/kg. Both drugs were given daily for 5 consecutive days. Eligible patients had persistent moderate-to-severe hypercalcemia (total serum calcium [corrected for serum albumin] greater than or equal to 12.0 mg/dL) after 2 days of hospitalization and IV hydration. Seventy-one patients were randomized and treated. Twenty-eight of 34 patients (82%) who received gallium nitrate achieved normocalcemia compared with 16 of 37 patients (43%) who received etidronate (P less than .001). Patients who received etidronate required significantly greater amounts of IV fluids (P = .04) and more hypocalcemic drug treatment (P less than .05) during the poststudy period than patients who received gallium nitrate. Kaplan-Meier analysis showed a significantly longer median duration of normocalcemia for patients treated with gallium nitrate (8 days v 0 days, P = .0005). A significantly higher proportion of patients treated with gallium nitrate developed asymptomatic hypophosphatemia compared with patients treated with etidronate (97% v 43%, P less than .001). We conclude that gallium nitrate is highly effective and superior to etidronate for acute control of moderate-to-severe cancer-related hypercalcemia.
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Venkatachalam, Taracad K., Paul V. Bernhardt, Damion H. R. Stimson, Gregory K. Pierens, Rajiv Bhalla, and David C. Reutens. "A Novel Strategy to Introduce 18F, a Positron Emitting Radionuclide, into a Gallium Nitrate Complex: Synthesis, NMR, X-Ray Crystal Structure, and Preliminary Studies on Radiolabelling with 18F." Australian Journal of Chemistry 71, no. 3 (2018): 81. http://dx.doi.org/10.1071/ch17334.

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A hexan-3,4-dione bis(4N-phenylthiosemicarbazone) gallium nitrate complex was synthesised and the structure was confirmed by NMR studies. The complex was prepared using an appropriately substituted dithiosemicarbazone and sodium methoxide in anhydrous methanol. The structure was further confirmed using single crystal X-ray crystallography. The crystal structure of gallium nitrate complex of diphenylthiosemicarbazone comprise a planar configuration of the tetradentate coordinated thiosemicarbazone with the Ga3+ ion, with the nitrate ligand occupying the apical coordination site. The X-ray structure of the gallium fluoride complex of pentan-2,3-dione bis(4N-phenylthiosemicarbazone) has been determined and confirms exchange of the nitrate can be achieved with fluoride. We show facile exchange of 18F, a positron emitter, to form the 18F-gallium complex under mild conditions, thus providing confirmation that such a transformation can be used to introduce 18F directly into nitrate-coordinated complexes of gallium-thiosemicarbozone complexes, a new labelling strategy for the preparation of imaging agents.
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Li, Lei, Hao Chang, Nie Yong, Meixi Li, Yi Hou, and Wei Rao. "Superior antibacterial activity of gallium based liquid metals due to Ga3+ induced intracellular ROS generation." Journal of Materials Chemistry B 9, no. 1 (2021): 85–93. http://dx.doi.org/10.1039/d0tb00174k.

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Goodley, Paul H., and Moshe Rogosnitzky. "The Effect of Gallium Nitrate on Arresting Blood Flow from a Wound." Case Reports in Medicine 2011 (2011): 1–3. http://dx.doi.org/10.1155/2011/819710.

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A novel application of gallium nitrate, hitherto unreported, in reducing bleeding time from an open wound is presented. Experiments performed using simple punctures in the forearm demonstrated a very substantial reduction in bleeding time when a solution of gallium nitrate was applied relative to a control. This outcome was shown to be unaffected by the anticoagulant properties of warfarin. The mechanism for such action of gallium nitrate is unknown and merits further investigation, as do the possibilities for such an application to improve both civilian and defense trauma treatment modalities.
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Дисертації з теми "Gallium nitrate"

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Stern, Lawrence S. "Studies on the effects of gallium nitrate on rat bone /." The Ohio State University, 1993. http://rave.ohiolink.edu/etdc/view?acc_num=osu1487842372894675.

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Crawford, Jessica F. "Using room-temperature liquid metals as a new reaction environment." Thesis, Queensland University of Technology, 2022. https://eprints.qut.edu.au/232783/1/Jessica_Crawford_Thesis.pdf.

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When conducting a chemistry experiment, reactions are often completed in a liquid solvent. This thesis investigates the outcome of using liquid metals as a new reaction environment. Galinstan is an alloy comprised of 68.5% gallium, 21.5% indium and 10% tin that can remain a liquid at room temperature and is extremely useful due to its flexibility and conductivity. This thesis shows that liquid metals can be used to synthesise new 2D materials that catalyse oxygen production during water splitting, form new materials that can catalyse ammonia production from abundant nitrate sources and facilitate the degradation of organic dye pollutants.
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3

Li, Ting. "Gallium nitride and aluminum gallium nitride-based ultraviolet photodetectors /." Digital version accessible at:, 2000. http://wwwlib.umi.com/cr/utexas/main.

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4

Muensit, Supasarote. "Piezoelectric coefficients of gallium arsenide, gallium nitride and aluminium nitride." Phd thesis, Australia : Macquarie University, 1999. http://hdl.handle.net/1959.14/36187.

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Анотація:
"1998"--T.p.
Thesis (PhD)--Macquarie University, School of Mathematics, Physics, Computing and Electronics, 1999.
Includes bibliographical references.
Introduction -- A Michelson interferometer for measurement of piezoelectric coefficients -- The piezoelectric coefficient of gallium arsenide -- Extensional piezoelectric coefficients of gallium nitrides and aluminium nitride -- Shear piezoelectric coefficients of gallium nitride and aluminium nitride -- Electrostriction in gallium nitride, aluminium nitride and gallium arsenide -- Summary and prognosis.
The present work represents the first use of the interferometric technique for determining the magnitude and sign of the piezoelectric coefficients of III-V compound semiconductors, in particular gallium arsenide (GaAs), gallium nitride (GaN), and aluminium nitride (AIN). The interferometer arrangement used in the present work was a Michelson interferometer, with the capability of achieving a resolution of 10⁻¹³ m. -- The samples used were of two types. The first were commercial wafers, with single crystal orientation. Both GaAs and GaN were obtained in this form. The second type of sample was polycrystalline thin films, grown in the semiconductor research laboratories at Macquarie University. GaN and AIN samples of this type were obtained. -- The d₁₄ coefficient of GaAs was measured by first measuring the d₃₃ value of a [111] oriented sample. This was then transformed to give the d₁₄ coefficient of the usual [001] oriented crystal. The value obtained for d₁₄ was (-2.7 ± 0.1) pmV⁻¹. This compares well with the most recent reported measurements of -2.69 pmV⁻¹. The significance of the measurement is that this represents the first time this coefficient has been measured using the inverse piezoelectric effect. -- For AIN and GaN samples, the present work also represents the first time their piezoelectric coefficients have been measured by interferometry. For GaN, this work presents the first reported measurements of the piezoelectric coefficients, and some of these results have recently been published by the (Muensit and Guy, 1998). The d₃₃ and d₃₁ coefficients for GaN were found to be (3.4 ± 0.1) pmV⁻¹ and (-1.7 ± 0.1) pmV⁻¹ respectively. Since these values were measured on a single crystal wafer and have been corrected for substrate clamping, the values should be a good measure of the true piezoelectric coefficients for bulk GaN. -- For AIN, the d₃₃ and d₃₁ coefficients were found to be (5.1 ± 0.2) pmV⁻¹, and (-2.6 ± 0.1) pmV⁻¹ respectively. Since these figures are measured on a polycrystalline sample it is quite probable that the values for bulk AIN would be somewhat higher.
The piezoelectric measurements indicate that the positive c axis in the nitride films points away from the substrate. The piezoelectric measurements provide a simple means for identifying the positive c axis direction. -- The interferometric technique has also been used to measure the shear piezoelectric coefficient d₁₅ for AIN and GaN. This work represents the first application of this technique to measure this particular coefficient. The d₁₅ coefficients for AIN and GaN were found to be (-3.6 ± 0.1) pmV⁻¹ and (-3.1 ± 0.1) pmV⁻¹ respectively. The value for AIN agrees reasonably well with the only reported value available in the literature of -4.08 pmV⁻¹. The value of this coefficient for GaN has not been measured. -- Some initial investigations into the phenomenon of electrostriction in the compound semiconductors were also performed. It appears that these materials have both a piezoelectric response and a significant electrostrictive response. For the polycrystalline GaN and AIN, the values of the M₃₃ coefficients are of the order of 10⁻¹⁸ m²V⁻². The commercial single crystal GaN and GaAs wafers display an asymmetric response which cannot be explained.
Mode of access: World Wide Web.
Various pagings ill
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Cheng, Chung-choi, and 鄭仲材. "Positron beam studies of fluorine implanted gallium nitride and aluminium gallium nitride." Thesis, The University of Hong Kong (Pokfulam, Hong Kong), 2009. http://hub.hku.hk/bib/B43278577.

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Cheng, Chung-choi. "Positron beam studies of fluorine implanted gallium nitride and aluminium gallium nitride." Click to view the E-thesis via HKUTO, 2009. http://sunzi.lib.hku.hk/hkuto/record/B43278577.

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Popa, Laura C. "Gallium nitride MEMS resonators." Thesis, Massachusetts Institute of Technology, 2015. http://hdl.handle.net/1721.1/99296.

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Анотація:
Thesis: Ph. D., Massachusetts Institute of Technology, Department of Physics, 2015.
Cataloged from PDF version of thesis.
Includes bibliographical references (pages 187-206).
As a wide band-gap semiconductor, with large breakdown fields and saturation velocities, Gallium Nitride (GaN) has been increasingly used in high-power, high-frequency electronics and monolithic microwave integrated circuits (MMICs). At the same time, GaN also has excellent electromechanical properties, such as high acoustic velocities and low elastic losses. Together with a strong piezoelectric coupling, these qualities make GaN ideal for RF MEMS resonators. Hence, GaN technology offers a platform for the seamless integration of low-loss, piezoelectric RF MEMS resonators with high power, high frequency electronics. Monolithic integration of MEMS resonators with ICs would lead to reduced parasitics and matching constraints, enabling high-purity clocks and frequency-selective filters for signal processing and high-frequency wireless communications. This thesis highlights the physics and resonator design considerations that must be taken into account in a monolithically integrated solution. We then show devices that achieve the highest frequency-quality factor product in GaN resonators to date (1.56 x 1013). We also highlight several unique transduction mechanisms enabled by this technology, such as the ability to use the 2D electron gas (2DEG) channel of High Electron Mobility Transistors (HEMTs) as an electrode for transduction. This enables a unique out-of-line switching capability which allowed us to demonstrate the first DC switchable solid-state piezoelectric resonator. Finally, we discuss the benefits of using active HEMT sensing of the mechanical signal when scaling to GHz frequencies, which enabled the highest frequency lithographically defined resonance reported to date in GaN (3.5 GHz). These demonstrated features sh
by Laura C. Popa.
Ph. D.
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Allums, Kimberly K. "Proton radiation and thermal stabilty [sic] of gallium nitride and gallium nitride devices." [Gainesville, Fla.] : University of Florida, 2006. http://purl.fcla.edu/fcla/etd/UFE0013123.

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Holmes, Kenneth L. "Two-dimensional modeling of aluminum gallium nitride/gallium nitride high electron mobility transistor." Thesis, Monterey, Calif. : Springfield, Va. : Naval Postgraduate School ; Available from National Technical Information Service, 2002. http://library.nps.navy.mil/uhtbin/hyperion-image/02Jun%5FHolmes.pdf.

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Mareš, Petr. "Depozice Ga a GaN nanostruktur na křemíkový a grafenový substrát." Master's thesis, Vysoké učení technické v Brně. Fakulta strojního inženýrství, 2014. http://www.nusl.cz/ntk/nusl-231443.

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Presented thesis is focused on the study of properties of Ga and GaN nanostructures on graphene. In the theoretical part of the thesis a problematics of graphene and GaN fabrication is discussed with a focus on the relation of Ga and GaN to graphene. The experimental part of the thesis deals with the depositions of Ga on transferred CVD-graphene on SiO2. The samples are analyzed by various methods (XPS, AFM, SEM, Raman spectroscopy, EDX). The properties of Ga on graphene are discussed with a focus on the surface enhanced Raman scattering effect. Furthermore, a deposition of Ga on exfoliated graphene and on graphene on a copper foil is described. GaN is fabricated by nitridation of the Ga structures on graphene. This process is illustrated by the XPS measurements of a distinct Ga peak and the graphene valence band during the process of nitridation.
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Книги з теми "Gallium nitrate"

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Gallium nitride electronics. Berlin: Springer, 2008.

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1922-, Pankove Jacques I., Moustakas T. D, and Willardson Robert K, eds. Gallium nitride (GaN) II. San Diego: Academic Press, 1999.

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Technology of gallium nitride crystal growth. Heidelberg: Springer, 2010.

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4

Feenstra, Randall M., and Colin E. C. Wood, eds. Porous Silicon Carbide and Gallium Nitride. Chichester, UK: John Wiley & Sons, Ltd, 2008. http://dx.doi.org/10.1002/9780470751817.

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Ehrentraut, Dirk, Elke Meissner, and Michal Bockowski, eds. Technology of Gallium Nitride Crystal Growth. Berlin, Heidelberg: Springer Berlin Heidelberg, 2010. http://dx.doi.org/10.1007/978-3-642-04830-2.

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International Conference on Nitride Semiconductors (4th 2001 Denver, Colo.). ICNS-4: Fourth International Conference on Nitride Semiconductors, Denver, Colorado, USA, 2001 : proceedings. Berlin: Wiley-VCH, 2002.

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Conference on Semiconducting and Insulating Materials (9th 1996 Toulouse, France). Semiconducting and insulating materials 1996: Proceedings of the 9th Conference on Semiconducting and Insulating Materials (SIMC'9), April 29/May 3, 1996, Toulouse, France. New York: Institute of Electrical and Electronics Engineers, 1996.

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B, Gil, ed. Low-dimensional nitride semiconductors. Oxford: Oxford University Press, 2002.

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International, Workshop on Nitride Semiconductors (2000 Nagoya Japan). IWN Nagoya 2000: International Workshop on Nitride Semiconductors : IWN2000 : September 24-27, 2000, Nagoya Congress Center, Nagoya, Japan. Tokyo: Institute of Pure and Applied Physics, 2000.

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A, Ponce Fernando, ed. Gallium nitride and related materials: The First International Symposium on Gallium Nitride and Related Materials held November 27-December 1, 1995, Boston, Massachusetts, U.S.A. Pittsburgh, Pa: Materials Research Society, 1996.

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Частини книг з теми "Gallium nitrate"

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Chitambar, Christopher R. "Gallium Nitrate, Apoptotic Effects." In Encyclopedia of Metalloproteins, 807–12. New York, NY: Springer New York, 2013. http://dx.doi.org/10.1007/978-1-4614-1533-6_112.

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Koudrine, A. V., and A. V. Skalny. "Gallium Nitrate and Zinc Content in Peripheral Blood Lymphocytes of Patients with Lung Cancer." In Trace Elements in Man and Animals 10, 640. New York, NY: Springer US, 2002. http://dx.doi.org/10.1007/0-306-47466-2_207.

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Linares, R. C., and R. M. Ware. "Gallium Nitride." In Inorganic Reactions and Methods, 202. Hoboken, NJ, USA: John Wiley & Sons, Inc., 2007. http://dx.doi.org/10.1002/9780470145227.ch146.

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Schoonmaker, Richard C., Claudia E. Burton, J. Lundstrom, and J. L. Margrave. "Gallium (III) Nitride." In Inorganic Syntheses, 16–18. Hoboken, NJ, USA: John Wiley & Sons, Inc., 2007. http://dx.doi.org/10.1002/9780470132388.ch5.

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Bin, Dong. "9 The Packaging Technologies for GaN HEMTs." In Gallium Nitride Power Devices, 261–80. CRC Press Taylor & Francis Group 6000 Broken Sound Parkway NW, Suite 300 Boca Raton, FL 33487-2742: CRC Press, 2017. http://dx.doi.org/10.1201/9781315196626-10.

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Feenstra, R. M., and S. W. Hla. "2.3.7 GaN, Gallium Nitride." In Physics of Solid Surfaces, 52–53. Berlin, Heidelberg: Springer Berlin Heidelberg, 2015. http://dx.doi.org/10.1007/978-3-662-47736-6_24.

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Kinski, Isabel, and Paul F. McMillan. "Gallium Nitride and Oxonitrides." In Ceramics Science and Technology, 91–130. Weinheim, Germany: Wiley-VCH Verlag GmbH & Co. KGaA, 2010. http://dx.doi.org/10.1002/9783527631735.ch3.

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Kinski, Isabel, and Paul F. McMillan. "Gallium Nitride and Oxonitrides." In Ceramics Science and Technology, 91–130. Weinheim, Germany: Wiley-VCH Verlag GmbH & Co. KGaA, 2014. http://dx.doi.org/10.1002/9783527631940.ch15.

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Chowdhury, Srabanti. "Vertical Gallium Nitride Technology." In Power Electronics and Power Systems, 101–21. Cham: Springer International Publishing, 2016. http://dx.doi.org/10.1007/978-3-319-43199-4_5.

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Khandelwal, Sourabh. "Gallium Nitride Semiconductor Devices." In Advanced SPICE Model for GaN HEMTs (ASM-HEMT), 1–8. Cham: Springer International Publishing, 2021. http://dx.doi.org/10.1007/978-3-030-77730-2_1.

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Тези доповідей конференцій з теми "Gallium nitrate"

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Adamcakova-Dodd, Andrea, Jessica M. Magwood, Jong Sung Kim, Kevin M. Kelly, Pradeep K. Singh, and Peter S. Thorne. "Toxicity Assessment Of Gallium Nitrate Inhalation Using Murine Model." In American Thoracic Society 2010 International Conference, May 14-19, 2010 • New Orleans. American Thoracic Society, 2010. http://dx.doi.org/10.1164/ajrccm-conference.2010.181.1_meetingabstracts.a6266.

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Myers, M., A. Podolska, T. Pope, F. M. L. Khir, B. D. Nener, M. V. Baker, and G. Parish. "8.1.5 Nitrate-selective gallium nitride transistor-based ion sensors with low detection limit." In 14th International Meeting on Chemical Sensors - IMCS 2012. AMA Service GmbH, Von-Münchhausen-Str. 49, 31515 Wunstorf, Germany, 2012. http://dx.doi.org/10.5162/imcs2012/8.1.5.

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Yu, Quanmao. "Study on the Preparation Technology for High Pure Gallium Nitrate." In First International Conference on Information Sciences, Machinery, Materials and Energy. Paris, France: Atlantis Press, 2015. http://dx.doi.org/10.2991/icismme-15.2015.100.

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Novick, Steven, Lieven J. Dupont, Yves Baert, and Raymond P. Warrell. "Abstract 1678: Systemic gallium nitrate therapy results in sustained sputum concentrations that may be therapeutic for biofilm-associated pulmonary bacterial infections." In Proceedings: AACR 101st Annual Meeting 2010‐‐ Apr 17‐21, 2010; Washington, DC. American Association for Cancer Research, 2010. http://dx.doi.org/10.1158/1538-7445.am10-1678.

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Catalin Sburlan, Ion, Ionut Vasile, and Emil Tudor. "Comparative study between semiconductor power devices based on silicon Si, silicon carbide SiC and gallium nitrate GaN used in the electrical system subassembly of an electric vehicle." In 2021 International Semiconductor Conference (CAS). IEEE, 2021. http://dx.doi.org/10.1109/cas52836.2021.9604127.

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BACH, LEONARDO CASSOL, CASSIANO RECH, and ALESSANDRO LUIZ BATSCHAUER. "Análise do Conversor Totem Pole para Correção do Fator de Potência utilizando Semicondutores de Nitreto de Gálio (GaN)." In Seminar on Power Electronics and Control (SEPOC 2021). sepoc, 2021. http://dx.doi.org/10.53316/sepoc2021.016.

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Анотація:
Neste artigo é apresentada a análise do conversor Totem Pole para correção do fator de potência, sendo mostradas as etapas de operação, modelagem e controle. Também são discutidas as vantagens do seu uso com semicondutores de potência de Nitreto de Gálio (Gallium Nitride - GaN) e diferenças em relação ao conversor Boost PFC. De modo a validar as análises, são mostradas simulações para uma aplicação de 360W.
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Wu, Tsung Han, Zhe Chuan Feng, Fangfei Li, Chung Cherng Lin, Ian Ferguson, Ray Hua Horng, Weijie Lu, P. M. Champion, and L. D. Ziegler. "Brillouin scattering studies of gallium nitride and Indium gallium nitride." In XXII INTERNATIONAL CONFERENCE ON RAMAN SPECTROSCOPY. AIP, 2010. http://dx.doi.org/10.1063/1.3482346.

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Martin, Kevin N. "European gallium nitride capability." In 2015 IEEE International Radar Conference (RadarCon). IEEE, 2015. http://dx.doi.org/10.1109/radar.2015.7131004.

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Li, Changyi, Antonio Hurtado, Jeremy B. Wright, Huiwen Xu, Sheng Liu, Ting S. Luk, Igal Brener, Steven R. Brueck, and George T. Wang. "Gallium Nitride Nanotube Lasers." In CLEO: Science and Innovations. Washington, D.C.: OSA, 2014. http://dx.doi.org/10.1364/cleo_si.2014.sw1g.3.

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"Front Matter: Volume 10532." In Gallium Nitride Materials and Devices XIII, edited by Jen-Inn Chyi, Hadis Morkoç, and Hiroshi Fujioka. SPIE, 2018. http://dx.doi.org/10.1117/12.2323347.

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Звіти організацій з теми "Gallium nitrate"

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Harris, J. S. Bulk Gallium Nitride Growth. Fort Belvoir, VA: Defense Technical Information Center, September 1998. http://dx.doi.org/10.21236/ada353635.

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Heikman, Sten J., and Umesh K. Mishra. System for Bulk Growth of Gallium Nitride. Vapor Phase Epitaxy of Gallium Nitride by Gallium Arc Evaporation. Fort Belvoir, VA: Defense Technical Information Center, March 2005. http://dx.doi.org/10.21236/ada464611.

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Skowronski, M. Deposition of Gallium Nitride Epilayers by OMVPE. Fort Belvoir, VA: Defense Technical Information Center, January 1998. http://dx.doi.org/10.21236/ada337316.

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Jones, Kenneth A., Randy P. Tompkins, Michael A. Derenge, Kevin W. Kirchner, Iskander G. Batyrev, and Shuai Zhou. Gallium Nitride (GaN) High Power Electronics (FY11). Fort Belvoir, VA: Defense Technical Information Center, January 2012. http://dx.doi.org/10.21236/ada556955.

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Allen, N. Gallium Nitride Superjunction Transistor: Continued Funding Report. Office of Scientific and Technical Information (OSTI), September 2022. http://dx.doi.org/10.2172/1890078.

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Mitchell, Christine Charlotte. Defect reduction in gallium nitride using cantilever epitaxy. Office of Scientific and Technical Information (OSTI), August 2003. http://dx.doi.org/10.2172/918286.

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Harris, H. M., J. Laskar, and S. Nuttinck. Engineering Support for High Power Density Gallium Nitride Microwave Transistors. Fort Belvoir, VA: Defense Technical Information Center, December 2001. http://dx.doi.org/10.21236/ada397860.

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McHugo, S. A., J. Krueger, and C. Kisielowski. Metallic impurities in gallium nitride grown by molecular beam epitaxy. Office of Scientific and Technical Information (OSTI), April 1997. http://dx.doi.org/10.2172/603696.

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Hite, Jennifer, Mark Twigg, Michael Mastro, Jr Freitas, Meyer Jaime, Vurgaftman Jerry, O'Connor Igor, et al. Development of Periodically Oriented Gallium Nitride for Non-linear Optics. Fort Belvoir, VA: Defense Technical Information Center, September 2012. http://dx.doi.org/10.21236/ada563315.

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Patibandla, Nag, and Vivek Agrawal. Advanced Epi Tools for Gallium Nitride Light Emitting Diode Devices. Office of Scientific and Technical Information (OSTI), December 2012. http://dx.doi.org/10.2172/1150624.

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