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Статті в журналах з теми "Flash Memory Device"
Abdullah, Dhuha, and Reyath Mahmood. "Design Flash Memory Programmer Device." AL-Rafidain Journal of Computer Sciences and Mathematics 3, no. 1 (July 1, 2006): 55–83. http://dx.doi.org/10.33899/csmj.2006.164045.
Повний текст джерелаAlahmadi, Abdulhadi, and Tae Sun Chung. "RSLSP: An Effective Recovery Scheme for Flash Memory Leveraging Shadow Paging." Electronics 11, no. 24 (December 10, 2022): 4126. http://dx.doi.org/10.3390/electronics11244126.
Повний текст джерелаHan, Hoonhee, Seokmin Jang, Duho Kim, Taeheun Kim, Hyeoncheol Cho, Heedam Shin, and Changhwan Choi. "Memory Characteristics of Thin Film Transistor with Catalytic Metal Layer Induced Crystallized Indium-Gallium-Zinc-Oxide (IGZO) Channel." Electronics 11, no. 1 (December 24, 2021): 53. http://dx.doi.org/10.3390/electronics11010053.
Повний текст джерелаKostadinov, Hristo, and Nikolai Manev. "Integer Codes Correcting Asymmetric Errors in Nand Flash Memory." Mathematics 9, no. 11 (June 1, 2021): 1269. http://dx.doi.org/10.3390/math9111269.
Повний текст джерелаTsoukalas, Dimitris, and Emanuele Verrelli. "Inorganic Nanoparticles for either Charge Storage or Memristance Modulation." Advances in Science and Technology 77 (September 2012): 196–204. http://dx.doi.org/10.4028/www.scientific.net/ast.77.196.
Повний текст джерелаXu, Guangxia, Lingling Ren, and Yanbing Liu. "Flash-Aware Page Replacement Algorithm." Mathematical Problems in Engineering 2014 (2014): 1–11. http://dx.doi.org/10.1155/2014/136246.
Повний текст джерелаPoudel, Prawar, Biswajit Ray, and Aleksandar Milenkovic. "Microcontroller Fingerprinting Using Partially Erased NOR Flash Memory Cells." ACM Transactions on Embedded Computing Systems 20, no. 3 (April 2021): 1–23. http://dx.doi.org/10.1145/3448271.
Повний текст джерелаHuang, Bai Yi. "A New Write Caching Algorithm for Solid State Disks." Advanced Materials Research 341-342 (September 2011): 700–704. http://dx.doi.org/10.4028/www.scientific.net/amr.341-342.700.
Повний текст джерелаWang, Lei, CiHui Yang, Jing Wen, and Shan Gai. "Emerging Nonvolatile Memories to Go Beyond Scaling Limits of Conventional CMOS Nanodevices." Journal of Nanomaterials 2014 (2014): 1–10. http://dx.doi.org/10.1155/2014/927696.
Повний текст джерелаJung, Sang-Goo, and Jong-Ho Lee. "Flash Memory Device with `I' Shape Floating Gate for Sub-70 nm NAND Flash Memory." Japanese Journal of Applied Physics 45, No. 45 (November 10, 2006): L1200—L1202. http://dx.doi.org/10.1143/jjap.45.l1200.
Повний текст джерелаДисертації з теми "Flash Memory Device"
Mih, Thomas Attia. "A novel low-temperature growth method of silicon structures and application in flash memory." Thesis, De Montfort University, 2011. http://hdl.handle.net/2086/5183.
Повний текст джерелаOrdosgoitti, Jorhan Rainier. "Development of a Non-Volatile Memristor Device Based on a Manganese-Doped Titanium Oxide Material." University of Toledo / OhioLINK, 2010. http://rave.ohiolink.edu/etdc/view?acc_num=toledo1290131827.
Повний текст джерелаMariščák, Igor. "Mechanismus pro upgrade BIOSu v Linuxu." Master's thesis, Vysoké učení technické v Brně. Fakulta informačních technologií, 2008. http://www.nusl.cz/ntk/nusl-235970.
Повний текст джерелаYuen, Kam Hung. "A nano-scale double-gate flash memory /." View abstract or full-text, 2003. http://library.ust.hk/cgi/db/thesis.pl?ELEC%202003%20YUEN.
Повний текст джерелаCossentine, Tyler Andrew. "An efficient external sorting algorithm for flash memory embedded devices." Thesis, University of British Columbia, 2012. http://hdl.handle.net/2429/40208.
Повний текст джерелаTao, Qingbo, and 陶庆波. "A study on the dielectrics of charge-trapping flash memory devices." Thesis, The University of Hong Kong (Pokfulam, Hong Kong), 2013. http://hdl.handle.net/10722/196488.
Повний текст джерелаpublished_or_final_version
Electrical and Electronic Engineering
Doctoral
Doctor of Philosophy
Garud, Niharika Triplett Gregory Edward. "Shallow trench isolation process in microfabrication for flash (NAND) memory." Diss., Columbia, Mo. : University of Missouri-Columbia, 2008. http://hdl.handle.net/10355/5622.
Повний текст джерелаThe entire dissertation/thesis text is included in the research.pdf file; the official abstract appears in the short.pdf file (which also appears in the research.pdf); a non-technical general description, or public abstract, appears in the public.pdf file. Title from title screen of research.pdf file (viewed on September 2, 2008) Includes bibliographical references.
Chan, Chun Keung. "A study on non-volatile memory scaling in the sub-100nm regime /." View abstract or full-text, 2005. http://library.ust.hk/cgi/db/thesis.pl?ELEC%202005%20CHAN.
Повний текст джерелаBryer, Bevan. "Protection unit for radiation induced errors in flash memory systems." Thesis, Stellenbosch : Stellenbosch University, 2004. http://hdl.handle.net/10019.1/50070.
Повний текст джерелаENGLISH ABSTRACT: Flash memory and the errors induced in it by radiation were studied. A test board was then designed and developed as well as a radiation test program. The system was irradiated. This gave successful results, which confirmed aspects of the study and gave valuable insight into flash memory behaviour. To date, the board is still being used to test various flash devices for radiation-harsh environments. A memory protection unit (MPU) was conceptually designed and developed to morntor flash devices, increasing their reliability in radiation-harsh environments. This unit was designed for intended use onboard a micro-satellite. The chosen flash device for this study was the K9F1208XOA model from SAMSUNG. The MPU was designed to detect, maintain, mitigate and report radiation induced errors in this flash device. Most of the design was implemented in field programmable gate arrays and was realised using VHDL. Simulations were performed to verify the functionality of the design subsystems. These simulations showed that the various emulated errors were handled successfully by the MPU. A modular design methodology was followed, therefore allowing the chosen flash device to be replaced with any flash device, following a small reconfiguration. This also allows parts of the system to be duplicated to protect more than one device.
AFRIKAANSE OPSOMMING: 'n Studie is gemaak van" Flash" geheue en die foute daarop wat deur radiasie veroorsaak word. 'n Toetsbord is ontwerp en ontwikkel asook 'n radiasie toetsprogram waarna die stelsel bestraal is. Die resultate was suksesvol en het aspekte van die studie bevestig en belangrike insig gegee ten opsigte van "flash" komponente in radiasie intensiewe omgewmgs. 'n Geheue Beskermings Eenheid (GBE) is konseptueel ontwerp en ontwikkelom die "flash" komponente te monitor. Dit verhoog die betroubaarheid in radiasie intensiewe omgewings. Die eenheid was ontwerp met die oog om dit aan boord 'n mikro-satelliet te gebruik. Die gekose "flash" komponent vir die studie was die K9F1208XOA model van SAMSUNG. Die GBE is ontwerp om foute wat deur radiasie geïnduseer word in die "flash" komponent te identifiseer, herstel en reg te maak. Die grootste deel van die implementasie is gedoen in "field programmable gate arrays" and is gerealiseer deur gebruik te maak van VHDL. Simulasies is gedoen om die funksionaliteit van die ontwikkelde substelsels te verifieer. Hierdie simulasies het getoon dat die verskeie geëmuleerde foute suksesvol deur die GBE hanteer is. 'n Modulre ontwerpsmetodologie is gevolg sodat die gekose "flash" komponent deur enige ander flash komponent vervang kan word na gelang van 'n eenvoudige herkonfigurasie. Dit stelook dele van die sisteem in staat om gedupliseer te word om sodoende meer as een komponent te beskerm.
ZAIDI, SYED AZHAR ALI. "Design of LDPC Decoder for Error Correction in Memory Devices." Doctoral thesis, Politecnico di Torino, 2015. http://hdl.handle.net/11583/2595161.
Повний текст джерелаКниги з теми "Flash Memory Device"
Dace, Andrea. The flash memory market. Saratoga, Calif: Electronic Trend Publications, 1993.
Знайти повний текст джерелаMatas, Brian. Memory 1997: Complete coverage of DRAM, SRAM, EPROM, and flash memory ICs. Scottsdale, AZ: Integrated Circuit Engineering Corp., 1997.
Знайти повний текст джерелаNon-Volatile Semiconductor Memory Workshop (23rd 2008 Opio, France). 2008 Joint Non-Volatile Semiconductor Memory Workshop and International Conference on Memory Technology and Design: Proceedings : May 18th-22nd, 2008 Opio, France. Piscataway, NJ: IEEE, 2008.
Знайти повний текст джерелаMarkus, Levy, ed. Designing with flash memory: The definitive guide to designing flash memory hardware and software for components and PCMCIA cards. San Diego, CA: Annabooks, 1993.
Знайти повний текст джерелаNon-Volatile, Semiconductor Memory Workshop (21st 2006 Monterey Calif ). 21st IEEE Non-Volatile Semiconductor Memory Workshop : IEEE NVSMW 2006. New York City, NY: IEEE, 2006.
Знайти повний текст джерелаNon-Volatile Semiconductor Memory Workshop (22nd 2007 Monterey, Calif.). 22nd IEEE Non-Volatile Semiconductor Memory Workshop: Proceedings : August 26th-30th, 2007, Monterey, California. Piscataway, NJ: IEEE, 2007.
Знайти повний текст джерелаNon-Volatile Memory Technology Symposium (9th 2008 Pacific Grove, CA). 2008 9th Annual Non-Volatile Memory Technology Symposium: Proceedings : Pacific Grove, California, 11-14 November 2008. Piscataway, NJ: IEEE, 2008.
Знайти повний текст джерелаMinn.) Annual Non-Volatile Memory Technology Symposium (13th 2013 Minneapolis. 2013 13th Non-Volatile Memory Technology Symposium (NVMTS 2013): Minneapolis, Minnesota, USA, 12-14 August 2013. Piscataway, NJ: IEEE, 2013.
Знайти повний текст джерелаNon-Volatile Memory Technology Symposium (5th 2004 Orlando, Fla.). 2004 Non-Volatile Memory Technology Symposium: Proceedings : 15-17 November, 2004, Crowne Plaza Universal Hotel, Orlando, Florida. Piscataway, N.J: IEEE, 2004.
Знайти повний текст джерелаIEEE, International Nonvolatile Memory Technology Conference (7th 1998 Albuquerque New Mexico). Seventh biennial IEEE Nonvolatile Memory Technology Conference: Proceedings : 1998 conference : June 22-24, 1998, Albuquerque, NM, USA. Piscataway, N.J: IEEE, 1998.
Знайти повний текст джерелаЧастини книг з теми "Flash Memory Device"
Butterfield, Andrew, and Art Ó Catháin. "Concurrent Models of Flash Memory Device Behaviour." In Lecture Notes in Computer Science, 70–83. Berlin, Heidelberg: Springer Berlin Heidelberg, 2009. http://dx.doi.org/10.1007/978-3-642-10452-7_6.
Повний текст джерелаPrabhu, Pravin, Ameen Akel, Laura M. Grupp, Wing-Kei S. Yu, G. Edward Suh, Edwin Kan, and Steven Swanson. "Extracting Device Fingerprints from Flash Memory by Exploiting Physical Variations." In Trust and Trustworthy Computing, 188–201. Berlin, Heidelberg: Springer Berlin Heidelberg, 2011. http://dx.doi.org/10.1007/978-3-642-21599-5_14.
Повний текст джерелаGuan, Lele, Jun Zheng, Chenyang Li, and Dianxin Wang. "Research on Data Recovery Technology Based on Flash Memory Device." In Algorithms and Architectures for Parallel Processing, 263–71. Cham: Springer International Publishing, 2018. http://dx.doi.org/10.1007/978-3-030-05054-2_20.
Повний текст джерелаShimizu, Kenichi, and Tomoaki Mitani. "Application Example 28: Cross-Sectional Examination of a Flash Memory Device." In New Horizons of Applied Scanning Electron Microscopy, 115–21. Berlin, Heidelberg: Springer Berlin Heidelberg, 2009. http://dx.doi.org/10.1007/978-3-642-03160-1_29.
Повний текст джерелаKim, Moonzoo, Yunja Choi, Yunho Kim, and Hotae Kim. "Formal Verification of a Flash Memory Device Driver – An Experience Report." In Model Checking Software, 144–59. Berlin, Heidelberg: Springer Berlin Heidelberg, 2008. http://dx.doi.org/10.1007/978-3-540-85114-1_12.
Повний текст джерелаBohara, Pooja, and S. K. Vishvakarma. "Independent Gate Operation of NAND Flash Memory Device with Improved Retention Characteristics." In Springer Proceedings in Physics, 567–70. Cham: Springer International Publishing, 2019. http://dx.doi.org/10.1007/978-3-319-97604-4_88.
Повний текст джерелаThean, A., and J. P. Leburton. "Three-Dimensional Self-Consistent Simulation of Silicon Quantum Dot Floating-Gate Flash Memory Device." In Physical Models for Quantum Dots, 807–14. New York: Jenny Stanford Publishing, 2021. http://dx.doi.org/10.1201/9781003148494-51.
Повний текст джерелаYu, Shimeng. "Flash Memory." In Semiconductor Memory Devices and Circuits, 83–132. Boca Raton: CRC Press, 2022. http://dx.doi.org/10.1201/9781003138747-4.
Повний текст джерелаSkorobogatov, Sergei. "Data Remanence in Flash Memory Devices." In Cryptographic Hardware and Embedded Systems – CHES 2005, 339–53. Berlin, Heidelberg: Springer Berlin Heidelberg, 2005. http://dx.doi.org/10.1007/11545262_25.
Повний текст джерелаKovács, Annamária, Ulrich Meyer, Gabriel Moruz, and Andrei Negoescu. "Online Paging for Flash Memory Devices." In Algorithms and Computation, 352–61. Berlin, Heidelberg: Springer Berlin Heidelberg, 2009. http://dx.doi.org/10.1007/978-3-642-10631-6_37.
Повний текст джерелаТези доповідей конференцій з теми "Flash Memory Device"
Guo, Jie, Chuhan Min, Tao Cai, Hai Li, and Yiran Chen. "Objnandsim: object-based NAND flash device simulator." In 2016 5th Non-Volatile Memory Systems and Applications Symposium (NVMSA). IEEE, 2016. http://dx.doi.org/10.1109/nvmsa.2016.7547179.
Повний текст джерелаSeokkiu Lee. "Scaling Challenges in NAND Flash Device toward 10nm Technology." In 2012 4th IEEE International Memory Workshop (IMW). IEEE, 2012. http://dx.doi.org/10.1109/imw.2012.6213636.
Повний текст джерелаOh, Dongyean, Seungchul Lee, Changsub Lee, Jaihyuk Song, Woonkyung Lee, and Jeonghyuk Choi. "Program Disturb Phenomenon by DIBL in MLC NAND Flash Device." In 2008 Joint Non-Volatile Semiconductor Memory Workshop and International Conference on Memory Technology and Design. IEEE, 2008. http://dx.doi.org/10.1109/nvsmw.2008.7.
Повний текст джерелаJang-Gn Yun, Yoon Kim, Il Han Park, Seongjae Cho, Jung Hoon Lee, Doo-Hyun Kim, Gil Sung Lee, et al. "Fin flash memory cells with separated double gates." In 2007 International Semiconductor Device Research Symposium. IEEE, 2007. http://dx.doi.org/10.1109/isdrs.2007.4422287.
Повний текст джерелаLiu, Yueran, Shan Tang, Chuanbin Mao, and Sanjay Banerjee. "SiC Nanocrystal Flash Memory Fabricated with Protein-mediated Assembly." In 2006 64th Device Research Conference. IEEE, 2006. http://dx.doi.org/10.1109/drc.2006.305148.
Повний текст джерелаCho, Seongjae, Yoon Kim, Won Bo Shim, Dong Hua Li, Jong-Ho Lee, Hyungcheol Shin, and Byung-Gook Park. "Highly scalable vertical bandgap-engineered NAND flash memory." In 2010 68th Annual Device Research Conference (DRC). IEEE, 2010. http://dx.doi.org/10.1109/drc.2010.5551967.
Повний текст джерелаMondai, Sandip, and V. Venkataraman. "Flash memory TFT based on fully solution processed oxide." In 2017 75th Device Research Conference (DRC). IEEE, 2017. http://dx.doi.org/10.1109/drc.2017.7999508.
Повний текст джерелаJin-yong Choi, Ki Seok Choi, Sung-Kwan Kim, Sookwan Lee, Eyee Hyun Nam, JiHyuck Yun, Sang Lyul Min, and Yookun Cho. "Flash memory-based storage device for mobile embedded applications." In 2007 IEEE International Conference on Systems, Man and Cybernetics. IEEE, 2007. http://dx.doi.org/10.1109/icsmc.2007.4413967.
Повний текст джерелаWu, Chen-Jun, Hang-Ting Lue, Tzu-Hsuan Hsu, Chih-Chang Hsieh, Wei-Chen Chen, Pei-Ying Du, Chia-Jung Chiu, and Chih-Yuan Lu. "Device Characteristics of Single-Gate Vertical Channel (SGVC) 3D NAND Flash Architecture." In 2016 IEEE International Memory Workshop (IMW). IEEE, 2016. http://dx.doi.org/10.1109/imw.2016.7495265.
Повний текст джерелаSarkar, J., S. Dey, Y. Liu, D. Shahrjerdi, D. Kelly, and S. Banerjee. "Vertical (3-D) flash memory with SiGe nanocrystal floating gate." In 2006 64th Device Research Conference. IEEE, 2006. http://dx.doi.org/10.1109/drc.2006.305176.
Повний текст джерела