Добірка наукової літератури з теми "FIELD EMISSION OF ELECTRONS"

Оформте джерело за APA, MLA, Chicago, Harvard та іншими стилями

Оберіть тип джерела:

Ознайомтеся зі списками актуальних статей, книг, дисертацій, тез та інших наукових джерел на тему "FIELD EMISSION OF ELECTRONS".

Біля кожної праці в переліку літератури доступна кнопка «Додати до бібліографії». Скористайтеся нею – і ми автоматично оформимо бібліографічне посилання на обрану працю в потрібному вам стилі цитування: APA, MLA, «Гарвард», «Чикаго», «Ванкувер» тощо.

Також ви можете завантажити повний текст наукової публікації у форматі «.pdf» та прочитати онлайн анотацію до роботи, якщо відповідні параметри наявні в метаданих.

Статті в журналах з теми "FIELD EMISSION OF ELECTRONS"

1

Kim, H. Y., M. Garg, S. Mandal, L. Seiffert, T. Fennel, and E. Goulielmakis. "Attosecond field emission." Nature 613, no. 7945 (January 25, 2023): 662–66. http://dx.doi.org/10.1038/s41586-022-05577-1.

Повний текст джерела
Анотація:
AbstractField emission of electrons underlies great advances in science and technology, ranging from signal processing at ever higher frequencies1 to imaging of the atomic-scale structure of matter2 with picometre resolution. The advancing of electron microscopy techniques to enable the complete visualization of matter on the native spatial (picometre) and temporal (attosecond) scales of electron dynamics calls for techniques that can confine and examine the field emission on sub-femtosecond time intervals. Intense laser pulses have paved the way to this end3,4 by demonstrating femtosecond confinement5,6 and sub-optical cycle control7,8 of the optical field emission9 from nanostructured metals. Yet the measurement of attosecond electron pulses has remained elusive. We used intense, sub-cycle light transients to induce optical field emission of electron pulses from tungsten nanotips and a weak replica of the same transient to directly investigate the emission dynamics in real time. Access to the temporal properties of the electron pulses rescattering off the tip surface, including the duration τ = (53 as ± 5 as) and chirp, and the direct exploration of nanoscale near fields open new prospects for research and applications at the interface of attosecond physics and nano-optics.
Стилі APA, Harvard, Vancouver, ISO та ін.
2

Troyon, Michel, and He Ning Lei. "Electron Trajectories Calculations of an Energy - Filtering Field-Emission Gun." Proceedings, annual meeting, Electron Microscopy Society of America 48, no. 1 (August 12, 1990): 192–93. http://dx.doi.org/10.1017/s0424820100179713.

Повний текст джерела
Анотація:
In many cases, the contribution of beam energy spread to the limitation of the performances of an electron microscope is strong. In the case of the field emission gun (FEG) , Troyon has experimentally shown it is possible to reduce considerably the energy spread by energy filtering at the gun level. The system developed consists basically of a magnetic FEG with a retarding electrode working as the retarding electrode of an energy filter. The principle is recalled in Fig. 1 and the cross section of the accelerator is given in Fig. 2. In this paper, the results of electron trajectories calculations inside the energy filtering field emission gun (EFFEG) are given.Fig. 3 shows that electrons of same energy, but entering the retarding field with different angles, can have exit angles very different. Due to the work function of approximately 4.5 eV the electrons, for an extracting potential Vo = 2 kV, enter in the field of the retarding electrode with an energy smaller than 2 keV. In Fig. 3 trajectories are computed for an electron of 1996 eV. Electrons passing by the nodal points have the same entering and exit angles. Trajectory 1 in Fig. 3 corresponds to an entering radius re = 17.5 μm and an entering semi angle αe = 1.2 mrad. For these re and αe values, at Vr =6 V, the exit semi angle αs = αe . Fig. 3 shows that an electron entering parallely to the axis, even very close to the axis (re = 10 μm) has a larger exit angle than electrons passing by the nodal points.
Стилі APA, Harvard, Vancouver, ISO та ін.
3

Razin, A. V., and V. F. Kharlamov. "Field emission of cold electrons." Technical Physics 51, no. 5 (May 2006): 650–53. http://dx.doi.org/10.1134/s1063784206050185.

Повний текст джерела
Стилі APA, Harvard, Vancouver, ISO та ін.
4

Rathkey, Doug. "Field Emission Basics: The Water Bucket Analogy." Microscopy Today 3, no. 10 (December 1995): 20–21. http://dx.doi.org/10.1017/s1551929500065706.

Повний текст джерела
Анотація:
In the water bucket analogy (Figure 1), the water level in a bucket represents the Fermi level - the highest occupied energy level in the cathode material. The work function is the energy required to get the “water droplets” (electrons) from the top of the liquid out of the bucket and ever the side (i.e., the distance equivalent to the potential energy barrier).In photoemission, the energy of a photon can remove an electron at the Fermi level from the cathode material and can impart enough kinetic energy of travel to allow it to escape from the bucket (Figure 1a). In thermionic emission, heat provides the energy to boil the electrons off and out of the bucket (Figure 1b). Finally, in field emission, a high electric field can thin the side of the bucket enough so that the electrons can tunnel right through it (Figure 1c). There are two types of field emission: cold field emission (CFE) and Schottky emission (SE).
Стилі APA, Harvard, Vancouver, ISO та ін.
5

Jung, Hyuck, Duck-Jin Lee, Hyun-Tae Chun, Nam-Je Koh, Young Rae Cho, and Dong-Gu Lee. "Carbon Nanotube Field Emitters for Display Applications Using Screen Printing." Materials Science Forum 475-479 (January 2005): 1889–92. http://dx.doi.org/10.4028/www.scientific.net/msf.475-479.1889.

Повний текст джерела
Анотація:
In this study, a 10"-sized panel with novel tetrode structure was tried to prevent broadening of electrons emitted from CNTs. The structure of the novel tetrode is composed of CNT emitters on a cathode electrode, a gate electrode, an extracting electrode coated on the top of a hopping electron spacer (HES), and an anode. HES contains funnel-shaped holes whose inner surfaces are coated with MgO. Electrons extracted through the gate are collected inside the funnel-shaped holes and hop along the hole surface to the top extracting electrode. The effects of HES on emission characteristics of field emission display (FED) were investigated. An active ozone treatment for the complete removal of residues of organic binders in the emitter devices was applied to the FED panel as a post-treatment
Стилі APA, Harvard, Vancouver, ISO та ін.
6

SODHA, MAHENDRA SINGH, AMRIT DIXIT, and GYAN PRAKASH. "Effect of electric field emission on charging of dust particles in a plasma." Journal of Plasma Physics 76, no. 2 (July 17, 2009): 159–68. http://dx.doi.org/10.1017/s0022377809990183.

Повний текст джерела
Анотація:
AbstractThe authors have considered the charging of spherical particles in a plasma, taking into account the electric field emission of electrons from the dust particles and the change in the electron/ion densities in the plasma. The dependence of the charge of a particle and electron/ion densities on the radius and number of dust particles and the density of electrons/ions and the temperature in the undisturbed plasma has been studied numerically without and with the inclusion of the electric field emission of electrons from the particles. It is seen that both the electric field emission and the electron/ion kinetics significantly affect the charging process.
Стилі APA, Harvard, Vancouver, ISO та ін.
7

Клименко, Владимир, and Vladimir Klimenko. "Sky-distribution of intensity of synchrotron radio emission of relativistic electrons trapped in Earth’s magnetic field." Solar-Terrestrial Physics 3, no. 4 (December 29, 2017): 32–43. http://dx.doi.org/10.12737/stp-34201704.

Повний текст джерела
Анотація:
This paper presents the calculations of synchrotron radio emission intensity from Van Allen belts with Gaussian space distribution of electron density across L-shells of a dipole magnetic field, and with Maxwell’s relativistic electron energy distribution. The results of these calculations come to a good agreement with measurements of the synchrotron emission intensity of the artificial radiation belt’s electrons during the Starfish nuclear test. We have obtained two-dimensional distributions of radio brightness in azimuth — zenith angle coordinates for an observer on Earth’s surface. The westside and eastside intensity maxima exceed several times the maximum level of emission in the meridian plane. We have also constructed two-dimensional distributions of the radio emission intensity in decibels related to the background galactic radio noise level. Isotropic fluxes of relativistic electrons (E ~ 1 MeV) should be more than 107 cm–2s–1 for the synchrotron emission intensity in the meridian plane to exceed the cosmic noise level by 0.1 dB (riometer sensitivity threshold).
Стилі APA, Harvard, Vancouver, ISO та ін.
8

KOMIRENKO, S. M., K. W. KIM, V. A. KOCHELAP, and M. A. STROSCIO. "HIGH-FIELD ELECTRON TRANSPORT CONTROLLED BY OPTICAL PHONON EMISSION IN NITRIDES." International Journal of High Speed Electronics and Systems 12, no. 04 (December 2002): 1057–81. http://dx.doi.org/10.1142/s0129156402001927.

Повний текст джерела
Анотація:
We have investigated the problem of electron runaway at strong electric fields in polar semiconductors focusing on the nanoscale nitride-based heterostructures. A transport model which takes into account the main features of electrons injected in short devices under high electric fields is developed. The electron distribution as a function of the electron momenta and coordinate is analyzed. We have determined the critical field for the runaway regime and investigated this regime in detail. The electron velocity distribution over the device is studied at different fields. We have applied the model to the group-III nitrides: InN, GaN and AlN. For these materials, the basic parameters and characteristics of the high-field electron transport are obtained. We have found that the transport in the nitrides is always dissipative. However, in the runaway regime, energies and velocities of electrons increase with distance which results in average velocities higher than the peak velocity in bulk-like samples. We demonstrated that the runaway electrons are characterized by the extreme distribution function with the population inversion. A three-terminal heterostructure where the runaway effect can be detected and measured is proposed. We also have considered briefly different nitride-based small-feature-size devices where this effect can have an impact on the device performance.
Стилі APA, Harvard, Vancouver, ISO та ін.
9

NISHIKAWA, K. I., J. NIMIEC, M. MEDVEDEV, B. ZHANG, P. HARDEE, Y. MIZUNO, Å. NORDLUND, et al. "RADIATION FROM RELATIVISTIC SHOCKS WITH TURBULENT MAGNETIC FIELDS." International Journal of Modern Physics D 19, no. 06 (June 2010): 715–21. http://dx.doi.org/10.1142/s0218271810016865.

Повний текст джерела
Анотація:
Using our new 3D relativistic electromagnetic particle (REMP) code parallelized with MPI, we investigated long-term particle acceleration associated with a relativistic electron–positron jet propagating in an unmagnetized ambient electron–positron plasma. We have also performed simulations with electron-ion jets. The simulations were performed using a much longer simulation system than our previous simulations in order to investigate the full nonlinear stage of the Weibel instability for electron–positron jets and its particle acceleration mechanism. Cold jet electrons are thermalized and ambient electrons are accelerated in the resulting shocks for pair plasma case. Acceleration of ambient electrons leads to a maximum ambient electron density three times larger than the original value for pair plasmas. Behind the bow shock in the jet shock strong electromagnetic fields are generated. These fields may lead to time-dependent afterglow emission. We calculated radiation from electrons propagating in a uniform parallel magnetic field to verify the technique. We also used the new technique to calculate emission from electrons based on simulations with a small system with two different cases for Lorentz factors (15 and 100). We obtained spectra which are consistent with those generated from electrons propagating in turbulent magnetic fields with red noise. This turbulent magnetic field is similar to the magnetic field generated at an early nonlinear stage of the Weibel instability.
Стилі APA, Harvard, Vancouver, ISO та ін.
10

Rathkey, Doug. "Evolution and Comparison of Electron Sources." Microscopy Today 1, no. 4 (June 1993): 16–17. http://dx.doi.org/10.1017/s1551929500067432.

Повний текст джерела
Анотація:
Over the years, we've seen major developments in electron source technologies in response to the demands for better performance. This article presents a brief overview of the cathode technologies in use today.Two types of electron sources are used in commercially available scanning electron microscopes (SEMs), transmission electron microscopes (TEMs), scanning Auger microprobes, and electron beam lithography systems: thermionic and field emission electron cathodes. Thermionic cathodes reiease electrons from the cathode material when they are heated while field emission cathodes rely on a high electric field to draw electrons from the cathode material.
Стилі APA, Harvard, Vancouver, ISO та ін.

Дисертації з теми "FIELD EMISSION OF ELECTRONS"

1

Kuwahara, M., T. Morino, T. Nakanishi, S. Okumi, M. Yamamoto, M. Miyamoto, N. Yamamoto, et al. "Spin-Polarized Electrons Extracted from GaAs Tips using Field Emission." American Institite of Physics, 2007. http://hdl.handle.net/2237/11993.

Повний текст джерела
Стилі APA, Harvard, Vancouver, ISO та ін.
2

Sosa, Edward Delarosa. "The Electron Emission Characteristics of Aluminum, Molybdenum and Carbon Nanotubes Studied by Field Emission and Photoemission." Thesis, University of North Texas, 2002. https://digital.library.unt.edu/ark:/67531/metadc3311/.

Повний текст джерела
Анотація:
The electron emission characteristics of aluminum, molybdenum and carbon nanotubes were studied. The experiments were setup to study the emission behavior as a function of temperature and exposure to oxygen. Changes in the surface work function as a result of thermal annealing were monitored with low energy ultra-violet photoelectron spectroscopy for flat samples while field emission energy distributions were used on tip samples. The change in the field emission from fabricated single tips exposed to oxygen while in operation was measured using simultaneous Fowler-Nordheim plots and electron energy distributions. From the results a mechanism for the degradation in the emission was concluded. Thermal experiments on molybdenum and aluminum showed that these two materials can be reduced at elevated temperatures, while carbon nanotubes on the other hand show effects of oxidation. To purely reduce molybdenum a temperature in excess of 750 ºC is required. This temperature exceeds that allowed by current display device technology. Aluminum on the other hand shows reduction at a much lower temperature of at least 125 ºC; however, its extreme reactivity towards oxygen containing species produces re-oxidation. It is believed that this reduction is due to the outward diffusion of aluminum atoms through the oxide. Carbon nanotubes on the other hand show signs of oxidation as they are heated above 700 ºC. In this case the elevated temperatures cause the opening of the end caps allowing the uptake of water. Oxygen exposure experiments indicate that degradation in field emission is two-fold and is ultimately dependent on the emission current at which the tip is operated. At low emission currents the degradation is exclusively due to oxidation. At high emission currents ion bombardment results in the degradation of the emitter. In between the two extremes, molybdenum tips are capable of stable emission.
Стилі APA, Harvard, Vancouver, ISO та ін.
3

Poa, Chun Hwa Patrick. "Electron field emission from carbons and their emission mechanism." Thesis, University of Surrey, 2002. http://epubs.surrey.ac.uk/842670/.

Повний текст джерела
Анотація:
This thesis is concerned with the research of the electron field emission properties of carbon based materials. Low emission threshold fields have been observed from both amorphous carbon thin films and carbon nanotubes. The emission mechanism can be subdivided into two groups depending on the type of electric field enhancement. These are the amorphous carbon flat films with non-geometric field enhancement and carbon nanotubes with high surface geometric field enhancement. Amorphous carbon thin films are deposited using an rf-plasma enhanced chemical vapour deposition technique. Changing the deposition conditions such as the addition of Argon or Nitrogen modifies the electronic properties. This induces variations in the sp2 concentration and its distribution within the films. The electron field emission properties from amorphous carbon thin films show a close relationship to its sp2 configuration. A model based on non-geometric field enhancement is proposed to explain the variation in the field emission characteristics. Nano-structured amorphous carbon films custom "designed" using ion beam assisted deposition with sp2 cluster sizes of around 60 nm have also been investigated. The field emission threshold field was shown to be controlled by the film's intrinsic stress and the local carbon density. With increasing stress, there is a concomitant increase in the local density, which is postulated to decrease the distance between the carbon graphitic "planes". This results in enhancement of the electron emission at lower fields. Stress within the films also induces changes to the band structure of the nano-structured carbon which are beneficial to the field emission process. Field emission from carbon nanotubes that are embedded in a polymer matrix has been investigated. The emission threshold fields are observed to be dependent on the nanotube density. The effect of electric field screening is used to explain the reduction of field enhancement observed in these films with increasing nanotube density. The field emission properties are compared with those films which have vertically aligned and in e-beam fabricated nanotube arrays. Results indicate that field emission properties from non-aligned nanotube films are comparable in performance to the best designed arrays in the literature. Although this study shows carbon based materials to have superior field emission properties, integrating the cathodes to fabricate commercial devices could prove to be very challenging.
Стилі APA, Harvard, Vancouver, ISO та ін.
4

Collins, Clare Melissa. "Ordered nanomaterials for electron field emission." Thesis, University of Cambridge, 2017. https://www.repository.cam.ac.uk/handle/1810/270357.

Повний текст джерела
Анотація:
In the quest for reliable, repeatable and stable field electron emission that has commercial potential, whilst many attempts have been made, none yet has been truly distinguishable as being successful. Whilst I do not claim within this thesis to have uncovered the secret to success, fundamental issues have been addressed that concern the future directions towards achieving its full potential. An exhaustive comparison is made across the diverse range of materials that have, over the past 40-50 years, been postulated and indeed tested as field emitters. This has not previously been attempted. The materials are assessed according to the important metrics of turn on voltage, Eon, and maximum current density, Jmax, where low Eon and high Jmax are seen as desirable. The nano-carbons, carbon nanotubes (CNTs), in particular, perform well in both these metrics. No dependency was seen between the material work function and its performance as an emitter, which might have been suggested by the Fowler Nordheim equations. To address the issues underlying the definition of the local enhancement factor, β, a number of variations of surface geometry using CNTs were fabricated. The field emission of these emitters was measured using two different approaches. The first is a Scanning Electrode Field Emission Microscope, SAFEM, which maps the emission at individual locations across the surface of the emitter, and the parallel plate that is more commonly encountered in field emission measurements. Finally, an observed hysteretic behaviour in CNT field emission was explored. The field emitters were subjected to a number of tests. These included; in-situ residual gas analysis of the gas species in the emitter environment, a stability study in which the emitters were exposed to a continuing voltage loop for 50 cycles, differing applied voltage times to analyse the effects on the emitted current, and varying maximums of applied field in a search for hysteresis onset information. These studies revealed the candidate in causing the hysteresis is likely to be water vapour that adsorbs on the CNT surface. A six step model if the emission process was made that details how and when the hysteresis is caused.
Стилі APA, Harvard, Vancouver, ISO та ін.
5

Kuhnen, Raphael [Verfasser], and Bernd von [Akademischer Betreuer] Issendorf. "Electron wave packet interference and directed emission of electrons in a two color laser field = Elektronenwellenpacketinterferenz und gerichtete Emission von Elektronen in einem zweifarben Laserfeld." Freiburg : Universität, 2012. http://d-nb.info/1123467781/34.

Повний текст джерела
Стилі APA, Harvard, Vancouver, ISO та ін.
6

Laou, Philips. "Field emission devices on silicon." Thesis, National Library of Canada = Bibliothèque nationale du Canada, 1998. http://www.collectionscanada.ca/obj/s4/f2/dsk1/tape11/PQDD_0001/NQ44486.pdf.

Повний текст джерела
Стилі APA, Harvard, Vancouver, ISO та ін.
7

Tsang, Wei Mong. "Electron field emission properties from nanoengineered structures." Thesis, University of Surrey, 2006. http://epubs.surrey.ac.uk/844374/.

Повний текст джерела
Анотація:
This work is mainly divided into three parts. Firstly, with the aim of integrating electron field emitter with other circuit elements on a single chip, silver-silicon dioxide (Ag-SiO2) nanocomposites are fabricated and studied. The Ag-SiO2 nanocomposites are synthesised by Ag implantation into thermally oxidised SiO2 layers on Si substrates and their fabrication processes are fully compatible with existing integrated circuit technology and their threshold fields are less than 20 V/mum. The local field enhancement mechanisms were studied and the fabrication processes of these layers optimised. Secondly, the electron field emission (FE) properties of two-dimensional quantum confinement structure were studied. Band gap modulated amorphous carbon (alpha-C) nanolayers were synthesised by pulsed laser deposition. In these structures, electrons are confined in a few nm thick low band gap sp2 rich alpha-C layer, which is bound by the vacuum barrier and a 3 nm thick high band gap sp3 rich alpha-C base layer. Anomalous FE properties, including negative differential conductance and repeatable switching effects, are observed when compared to control samples. These properties will be discussed in terms of resonant tunnelling and are of great interest in the high-speed vacuum microelectronic devices. Finally, due to the interesting electrical transport properties and rare FE characteristics of metal quantum dots (QDs), cobalt QDs were synthesized in a SiO2 matrix by ion implantation. Staircase-like current-field characteristics were observed for the first time from these samples and give an experimental insight into existing Coulomb Blockade effects in the metal QDs during the FE process. Moreover, these samples also achieve excellent FE properties with threshold fields less than 5 V/mum and are comparable with other popular FE materials.
Стилі APA, Harvard, Vancouver, ISO та ін.
8

Tang, Yew Fei. "Electron field emission from laser crystallised amorphous silicon." Thesis, University of Surrey, 2003. http://epubs.surrey.ac.uk/843179/.

Повний текст джерела
Анотація:
Flat panel displays based on electron field emission can provide the benefits of the high resolution of a cathode ray tube display while possessing the portability of a liquid crystal display. To date, the problem with a field emission flat panel display based on silicon is that it usually involves complex photolithography processing, making it too complex and expensive to be commercially viable. In this thesis, the emphasis of the research is to fabricate a three terminal silicon device for flat panel display based on field emission technology without using photolithography processes. Laser crystallised amorphous silicon is chosen for our material which creates a rough silicon surface whose roughness gives rise to field enhancement. Furthermore, this process is widely used in the display industry to fabricate silicon based display driver thin film transistors, which can be readily incorporated. It is important to understand the electron field emission mechanism from the laser crystallised amorphous silicon and to find optimum conditions for emission. In the course of our research, we established a regime for super sequential lateral growth or a hybrid sequential lateral solidification and super lateral growth in Nd:YAG crystallisation of amorphous silicon. Excimer laser crystallised amorphous silicon under optimum conditions gives emission currents of the order of 10-5A (current densities ~ 0.04 A/cm2) at threshold fields less than 15 V/mum in a diode configuration, without the need for a forming process. Through experiments, we concluded that the field emission mechanism from these samples is not controlled purely by surface phenomena, contrary to what was suggested by the Fowler Nordheim theory. Instead, it is the diffusion of the underlay metals into the silicon that create clusters of silicide that allow the electrons to become "hot" while travelling between the clusters. Lastly, a novel process illustrating that a three-terminal device based on laser crystallised amorphous silicon can be fabricated without the need for photolithography. However, the field emission data showed that some fine-tuning of the process is still required.
Стилі APA, Harvard, Vancouver, ISO та ін.
9

Smith, Richard Charles. "Electron field emission properties of tip based emitters." Thesis, University of Surrey, 2005. http://epubs.surrey.ac.uk/843091/.

Повний текст джерела
Анотація:
Large area displays such as laptop computers and flat screen televisions have enormous market potential. There are numerous technologies in existence today, including LCD (liquid crystal displays) and plasma, however they each suffer from unique limitations, mainly the size of the display and operating conditions. There is still a need for a method of depositing electronic materials over large areas at suitable temperatures. This is important since the construction of panels using sub-modules such as crystalline silicon wafers is very difficult and expensive. The displays based on liquid crystals that use thin film transistor (TFT) driven active matrix addressing is the most common flat screen technology at present. However, there are great problems associated with yield in fabrication, especially for screen dimensions over 14 inches. Hence the screens are very expensive. Field emission displays utilising the phenomenon of field emission in which electrons escape their work function and "jump" from the surface of the semiconductor into a vacuum has been proposed as a competing technology. Each pixel is controlled by many tip based emitters, therefore improving the yield. This thesis explores the field emission properties and mechanisms of tip based emitters, and also explore the possibility of utilising carbon nanotubes as electron sources for field emission displays.
Стилі APA, Harvard, Vancouver, ISO та ін.
10

Forrest, Roy Duncan. "Electron field emission from amorphous semiconductor thin films." Thesis, University of Surrey, 2000. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.484237.

Повний текст джерела
Стилі APA, Harvard, Vancouver, ISO та ін.

Книги з теми "FIELD EMISSION OF ELECTRONS"

1

Mesi︠a︡t︠s︡, G. A. Explosive electron emission. Ekaterinburg: URO-Press, 1998.

Знайти повний текст джерела
Стилі APA, Harvard, Vancouver, ISO та ін.
2

Egorov, Nikolay, and Evgeny Sheshin. Field Emission Electronics. Cham: Springer International Publishing, 2017. http://dx.doi.org/10.1007/978-3-319-56561-3.

Повний текст джерела
Стилі APA, Harvard, Vancouver, ISO та ін.
3

Brodusch, Nicolas, Hendrix Demers, and Raynald Gauvin. Field Emission Scanning Electron Microscopy. Singapore: Springer Singapore, 2018. http://dx.doi.org/10.1007/978-981-10-4433-5.

Повний текст джерела
Стилі APA, Harvard, Vancouver, ISO та ін.
4

Fleck, Roland A., and Bruno M. Humbel. Biological Field Emission Scanning Electron Microscopy. Chichester, UK: John Wiley & Sons, Ltd, 2019. http://dx.doi.org/10.1002/9781118663233.

Повний текст джерела
Стилі APA, Harvard, Vancouver, ISO та ін.
5

Tan ji bo mo zhi bei ji chang zhi dian zi fa she: Tanji bomo zhibei ji changzhi dianzi fashe. Zhengzhou Shi: Zhengzhou da xue chu ban she, 2009.

Знайти повний текст джерела
Стилі APA, Harvard, Vancouver, ISO та ін.
6

Fursey, George. Field emission in vacuum microelectronics. New York, NY: Kluwer Academic/Plenum Publishers, 2004.

Знайти повний текст джерела
Стилі APA, Harvard, Vancouver, ISO та ін.
7

Archer, Anthony David. Spectroscopic studies of field-induced electron emission from isolated microstructures. Birmingham: Aston University. Department of Electrical Engineering and Applied Physics, 1992.

Знайти повний текст джерела
Стилі APA, Harvard, Vancouver, ISO та ін.
8

Prasad, Ghatak Kamakhya, ed. Fowler-Nordheim field emission: Effects in semiconductor nanostructures. Heidelberg: Springer, 2012.

Знайти повний текст джерела
Стилі APA, Harvard, Vancouver, ISO та ін.
9

Kapustin, Vladimir, Aleksandr Sigov, Illarion Li, and Vladimir Mel'nikov. Point defects in oxides and emission properties. ru: INFRA-M Academic Publishing LLC., 2022. http://dx.doi.org/10.12737/1846464.

Повний текст джерела
Анотація:
The monograph discusses the influence of point defects in oxides, which are the main emission component of cathodes of electrovacuum microwave devices, on their emission properties. The theory of electron emission of oxides, analytical methods for studying cathodes, methods for studying their emission properties are described. The issues of the theory and physicochemistry of nickel-oxide, metal-porous, metal-alloy and yttrium oxide cathodes, including cathodes for cold-start magnetrons, are considered in detail. It is intended for scientific and engineering workers specializing in the field of electronic materials science and electronic devices. It can also serve as a textbook useful for teachers, graduate students, undergraduates, undergraduates of the corresponding physical-technical and natural-scientific specialties.
Стилі APA, Harvard, Vancouver, ISO та ін.
10

Hill, D. A. Detection of quasi-static electric fields radiated by electrically small emitters. [Gaithersburg, Md.]: U.S. Dept. of Commerce, Technology Administration, National Institute of Standards and Technology, 2000.

Знайти повний текст джерела
Стилі APA, Harvard, Vancouver, ISO та ін.

Частини книг з теми "FIELD EMISSION OF ELECTRONS"

1

Egorov, Nikolay, and Evgeny Sheshin. "Field Emission Cathodes." In Field Emission Electronics, 229–93. Cham: Springer International Publishing, 2017. http://dx.doi.org/10.1007/978-3-319-56561-3_5.

Повний текст джерела
Стилі APA, Harvard, Vancouver, ISO та ін.
2

Egorov, Nikolay, and Evgeny Sheshin. "Basic Principles." In Field Emission Electronics, 1–42. Cham: Springer International Publishing, 2017. http://dx.doi.org/10.1007/978-3-319-56561-3_1.

Повний текст джерела
Стилі APA, Harvard, Vancouver, ISO та ін.
3

Egorov, Nikolay, and Evgeny Sheshin. "Experimental Equipment and Technique." In Field Emission Electronics, 43–114. Cham: Springer International Publishing, 2017. http://dx.doi.org/10.1007/978-3-319-56561-3_2.

Повний текст джерела
Стилі APA, Harvard, Vancouver, ISO та ін.
4

Egorov, Nikolay, and Evgeny Sheshin. "Modern Developments in Theoretical Research of Field Emission." In Field Emission Electronics, 115–69. Cham: Springer International Publishing, 2017. http://dx.doi.org/10.1007/978-3-319-56561-3_3.

Повний текст джерела
Стилі APA, Harvard, Vancouver, ISO та ін.
5

Egorov, Nikolay, and Evgeny Sheshin. "Simulation of Structure and Parameters of Field Emission Cathodes." In Field Emission Electronics, 171–228. Cham: Springer International Publishing, 2017. http://dx.doi.org/10.1007/978-3-319-56561-3_4.

Повний текст джерела
Стилі APA, Harvard, Vancouver, ISO та ін.
6

Egorov, Nikolay, and Evgeny Sheshin. "Carbon-Based Field-Emission Cathodes." In Field Emission Electronics, 295–367. Cham: Springer International Publishing, 2017. http://dx.doi.org/10.1007/978-3-319-56561-3_6.

Повний текст джерела
Стилі APA, Harvard, Vancouver, ISO та ін.
7

Egorov, Nikolay, and Evgeny Sheshin. "Computation of Field-Emission Cathode-Based Electron Guns." In Field Emission Electronics, 369–426. Cham: Springer International Publishing, 2017. http://dx.doi.org/10.1007/978-3-319-56561-3_7.

Повний текст джерела
Стилі APA, Harvard, Vancouver, ISO та ін.
8

Egorov, Nikolay, and Evgeny Sheshin. "Field Emission Cathode-Based Devices and Equipment." In Field Emission Electronics, 427–538. Cham: Springer International Publishing, 2017. http://dx.doi.org/10.1007/978-3-319-56561-3_8.

Повний текст джерела
Стилі APA, Harvard, Vancouver, ISO та ін.
9

Xanthakis, John P. "Field Emission and Vacuum Devices." In Electronic Conduction, 165–94. First edition. | Boca Raton : CRC Press, 2021. | Series: Textbook series in physical sciences: CRC Press, 2020. http://dx.doi.org/10.1201/9780429506444-6.

Повний текст джерела
Стилі APA, Harvard, Vancouver, ISO та ін.
10

Vigoureux, J. M. "Emission and Absorption of Light by Electrons or Atoms in Optical Near Fields." In Near Field Optics, 239–46. Dordrecht: Springer Netherlands, 1993. http://dx.doi.org/10.1007/978-94-011-1978-8_26.

Повний текст джерела
Стилі APA, Harvard, Vancouver, ISO та ін.

Тези доповідей конференцій з теми "FIELD EMISSION OF ELECTRONS"

1

Fisher, T. S., and D. G. Walker. "Direct Refrigeration by Electron Field Emission From Diamond Microtips." In ASME 2000 International Mechanical Engineering Congress and Exposition. American Society of Mechanical Engineers, 2000. http://dx.doi.org/10.1115/imece2000-1443.

Повний текст джерела
Анотація:
Abstract This paper describes a concept for creating high-capacity, direct electrical-to-thermal energy conversion for compact cooling based on electron field emission. Electron field emission involves the transport of electrons that tunnel through a potential barrier. The thermodynamics of field emission have remained relatively unexplored. However, emission from wide-band-gap semiconductors, such as diamond, is known to produce an energy filtering effects such that high-energy electrons possess higher probabilities of emission. Lower energy electrons replace the emitted electrons, and thus, this process can produce a refrigeration effect. The refrigeration capacity is proportional to the emission current density, which is very high for diamond emitters. This high electrical current density implies that high thermal current densities are possible. The present work provides a thermodynamic analysis and energy conversion predictions based on experimental current-voltage data from diamond tip emitters. Energy fluxes in excess of 100 W/cm2 are predicted by the theory for room-temperature operation.
Стилі APA, Harvard, Vancouver, ISO та ін.
2

Walker, D. G., and T. S. Fisher. "Electron Transport and Anode Heating Due to Field Emission From Carbon Nanotubes." In ASME 2002 International Mechanical Engineering Congress and Exposition. ASMEDC, 2002. http://dx.doi.org/10.1115/imece2002-32126.

Повний текст джерела
Анотація:
Carbon nanotubes (CNT) are being considered for field emission applications because of their low turn-on voltage and ability to support large current densities. The localization of emission and large currents from CNTs result in significant anode heating. The present work investigates the electron energy distribution at the anode surface through simulation of the field emission process and the trajectory of electrons across the vacuum gap. Field emission is modeled by Fowler-Nordheim-like expressions where the emission site is assumed to be a ring with the diameter of a nanotube. The electron trajectory is determined through a Monte Carlo simulation including Coulomb interactions between electrons. Results indicate that the electron beam spreads due to Coulomb interaction, but that the initial ring is preserved. In fact, the ring diameter at the anode spreads to 3μ per 10μ of vacuum gap in a field of 10 Vμm. This estimate matches well with reported observations. Further, the spreading becomes more significant with increased fields due to the higher current density of field emitted electrons.
Стилі APA, Harvard, Vancouver, ISO та ін.
3

KUWAHARA, M., T. NAKANISHI, S. OKUMI, M. YAMAMOTO, M. MIYAMOTO, N. YAMAMOTO, K. YASUI, et al. "GENERATION OF SPIN POLARIZED ELECTRONS BY FIELD EMISSION." In Proceedings of the Eleventh International Workshop. WORLD SCIENTIFIC, 2007. http://dx.doi.org/10.1142/9789812770653_0029.

Повний текст джерела
Стилі APA, Harvard, Vancouver, ISO та ін.
4

Pan, Tony, Heinz Busta, Rich Gorski, and Boris Rozansky. "Inverse tunneling of electrons in field emission heat engines." In 2014 27th International Vacuum Nanoelectronics Conference (IVNC). IEEE, 2014. http://dx.doi.org/10.1109/ivnc.2014.6894821.

Повний текст джерела
Стилі APA, Harvard, Vancouver, ISO та ін.
5

Andreev, A. A., V. N. Novikov, K. Yu Platonov, and J. C. Gauthier. "Hard X-ray Emission from Femtosecond Laser Interaction in Overdense Plasmas." In Applications of High Field and Short Wavelength Sources. Washington, D.C.: Optica Publishing Group, 1997. http://dx.doi.org/10.1364/hfsw.1997.thb3.

Повний текст джерела
Анотація:
The recent development of ultra-short pulse lasers has made possible the investigation of laser matter interaction at ultra-high intensities. For sub-picosecond pulses, a hot and overdense plasma is produced very rapidly during the rise of the pulse and further laser interaction occurs with this plasma. One of the results of the interaction is the generation of fast electrons and of intense hard x-ray emission. The x-ray pulse duration is determined by the mean free path of the fast electrons in the target material. It can be very short (< 1 ps) and its intensity sufficient to be registered by the usual methods. With high laser pulse repetition rates, it has been demonstrated [1] that one can obtain an instantaneous signature of fast-x-ray dense-matter interaction processes. The high energy of the x-ray photons (up to ≈ 1MeV) makes it possible to study small size objects and even to excite nuclear levels. Numerous papers [2-7] have been devoted to the study of femtosecond laser pulse interaction with plasmas. In this paper, we calculate the electron energy distribution function in the presence of the laser field, the absorption coefficient, and the parameters of the fast electron flux in the plasma. Our absorption results are in agreement with previously published [3-5] papers. A new feature of our calculations is the determination of the energy and spectrum characteristics of the hard x-ray pulse produced by the interaction of an intense laser with a solid-state target.
Стилі APA, Harvard, Vancouver, ISO та ін.
6

Peterson, M. S., T. S. Fisher, S. V. Garimella, and D. J. Schlitz. "Experimental Characterization of Low Voltage Field Emission From Carbon-Based Cathodes in Atmospheric Air." In ASME 2003 International Mechanical Engineering Congress and Exposition. ASMEDC, 2003. http://dx.doi.org/10.1115/imece2003-41775.

Повний текст джерела
Анотація:
Nanoscale carbon-based field-emitter materials exhibit excellent electron field emission properties, characterized by low turn-on voltages and high current densities. The use of these materials has not been previously considered for ion generation in air, yet these properties suggest that substantial ionization may occur at low voltages compared to conventional methods involving glow or arc gas discharges. Electron field emission from carbon-based materials, including polycrystalline diamond and carbon nanotubes, in atmospheric pressure air is experimentally characterized. Electric fields between 30 V/μm and 100 V/μm applied between the two terminals produce field-emitted electrons via quantum tunneling. These electrons then travel through the electric field colliding with neutral air molecules and occasionally ionizing them. This process can produce a self-sustained current flow (from fractions of picoamperes to microamperes) between the anode and cathode. The current remains stable at voltages lower than those predicted by Paschen’s curve for gaseous breakdown and ionization. Results indicate the presence of field emission from the cathode that aids in sustaining current at low voltages. The observed behavior suggests that this method can achieve efficient generation of ions for air purification and ionic flow pumping.
Стилі APA, Harvard, Vancouver, ISO та ін.
7

Bocoum, Maïmouna, Maxence Thevenet, Frederik Boehle, Benoit Beaurepaire, Aline Vernier, Aurélie Jullien, Jérôme Faure, and Rodrigo B. Lopez-Martens. "Correlated emission of high-harmonics and fast electrons beams from plasma mirrors." In High Intensity Lasers and High Field Phenomena. Washington, D.C.: OSA, 2016. http://dx.doi.org/10.1364/hilas.2016.hm6b.1.

Повний текст джерела
Стилі APA, Harvard, Vancouver, ISO та ін.
8

Go, David B., Timothy S. Fisher, and Suresh V. Garimella. "Direct Simulation Monte Carlo Analysis of Microscale Field Emission and Ionization of Atmospheric Air." In ASME 2006 International Mechanical Engineering Congress and Exposition. ASMEDC, 2006. http://dx.doi.org/10.1115/imece2006-14476.

Повний текст джерела
Анотація:
Ionic winds are formed when air ions are drawn through the atmosphere by applied electric and/or magnetic fields. The ions collide with neutral air molecules, exchanging momentum, causing the neutral molecules to move. Continued collisions and momentum exchanges generate a net flow called an ionic wind [1]. Ionic winds formed near flat plates can produce local boundary layer distortion in the presence of a bulk flow. This concept has been studied experimentally at the macroscale as a method for drag reduction [2] and has been suggested at the microscale for convective cooling enhancement [3]. Specifically, microfabricated ion wind engines can be integrated onto electronic chips to provide additional local cooling at "hot-spot" locations. In our previous work, continuum modeling of the ionic wind phenomena showed an approximately 50% increase in the local heat transfer coefficient at the location of the ion wind engine [3]. However, in that work, ionization physics were not modeled, rather assumptions for ion current and concentrations were used as a basis for modeling ion transport. At the microscale, ionization occurs when field-emitted electrons from closely spaced electrodes collide with neutral air molecules, stripping away electrons and forming molecular ions. Geometric enhancement of the electrodes using nanostructured materials enables low ionization voltages conducive to microelectronic devices. Understanding the microscale ionization process is necessary to accurately predict the ensuing ionic wind and cooling. Direct Simulation Monte Carlo (DSMC) is used in the present work to predict field emission between two planar electrodes and the consequent ionization of the interstitial air.
Стилі APA, Harvard, Vancouver, ISO та ін.
9

Kuwahara, M., T. Morino, T. Nakanishi, S. Okumi, M. Yamamoto, M. Miyamoto, N. Yamamoto, et al. "Spin-Polarized Electrons Extracted from GaAs Tips using Field Emission." In Proceedings of the 17th International Spin Physics Symposium. AIP, 2007. http://dx.doi.org/10.1063/1.2750952.

Повний текст джерела
Стилі APA, Harvard, Vancouver, ISO та ін.
10

Malucci, Robert D. "The Impact of Micro-protrusions on Field Emission of Electrons." In 2019 IEEE Holm Conference on Electrical Contacts. IEEE, 2019. http://dx.doi.org/10.1109/holm.2019.8923932.

Повний текст джерела
Стилі APA, Harvard, Vancouver, ISO та ін.

Звіти організацій з теми "FIELD EMISSION OF ELECTRONS"

1

Boyd, J. K., and V. K. Neil. Electron beam brightness with field immersed emission. Office of Scientific and Technical Information (OSTI), December 1985. http://dx.doi.org/10.2172/6369432.

Повний текст джерела
Стилі APA, Harvard, Vancouver, ISO та ін.
2

Ang, Lay-Kee. Modeling of Electron Field Emission from Graphene. Fort Belvoir, VA: Defense Technical Information Center, December 2011. http://dx.doi.org/10.21236/ada552737.

Повний текст джерела
Стилі APA, Harvard, Vancouver, ISO та ін.
3

Hirshfield, Jay L. HIGH-CURRENT COLD CATHODE FIELD EMISSION ARRAY FOR ELECTRON LENS APPLICATION. Office of Scientific and Technical Information (OSTI), December 2012. http://dx.doi.org/10.2172/1058891.

Повний текст джерела
Стилі APA, Harvard, Vancouver, ISO та ін.
4

McGuire, Gary, Allen Martin, and John Noonan. Final Technical Report- Back-gate Field Emission-based Cathode RF Electron Gun. Office of Scientific and Technical Information (OSTI), October 2010. http://dx.doi.org/10.2172/991655.

Повний текст джерела
Стилі APA, Harvard, Vancouver, ISO та ін.
5

Upadhyay, Janardan. Electron Activity (Secondary Electron & Field Emission ) Suppression by Magnetic Field Placed on the Surface of Metals And Dielectric. Office of Scientific and Technical Information (OSTI), February 2021. http://dx.doi.org/10.2172/1764190.

Повний текст джерела
Стилі APA, Harvard, Vancouver, ISO та ін.
6

Ottinger, P. F., G. Cooperstein, J. W. Schumer, and S. B. Swanekamp. Self-Magnetic Field Effects on Electron Emission as the Critical Current is Approached. Office of Scientific and Technical Information (OSTI), September 2001. http://dx.doi.org/10.2172/1185204.

Повний текст джерела
Стилі APA, Harvard, Vancouver, ISO та ін.
7

Van Noord, Jon, Brian Gilchrist, Roy Clarke, Pedro A. Encarnacion, and Hannah Goldberg. The Use of Boron Nitride for Improved Cold-Cathode Electron Field Emission Technology. Fort Belvoir, VA: Defense Technical Information Center, May 2004. http://dx.doi.org/10.21236/ada426331.

Повний текст джерела
Стилі APA, Harvard, Vancouver, ISO та ін.
8

Ottinger, P. F., G. Cooperstein, J. W. Schumer, and S. B. Swanekamp. Self-Magnetic Field Effects on Electron Emission as the Critical Current is Approached. Fort Belvoir, VA: Defense Technical Information Center, September 2001. http://dx.doi.org/10.21236/ada390441.

Повний текст джерела
Стилі APA, Harvard, Vancouver, ISO та ін.
9

Walko, R. J., J. G. Fleming, and J. W. Hubbs. Novel thin film field emission electron source laboratory directed research and development final report. Office of Scientific and Technical Information (OSTI), April 1997. http://dx.doi.org/10.2172/468614.

Повний текст джерела
Стилі APA, Harvard, Vancouver, ISO та ін.
10

Morse, J. D., J. C. Koo, R. T. Graff, A. F. Jankowski, and J. P. Hayes. Field-emission cathode micro-electro-mechanical system technology for sensors, diagnostics, and microelectronics. Office of Scientific and Technical Information (OSTI), March 1998. http://dx.doi.org/10.2172/305303.

Повний текст джерела
Стилі APA, Harvard, Vancouver, ISO та ін.
Ми пропонуємо знижки на всі преміум-плани для авторів, чиї праці увійшли до тематичних добірок літератури. Зв'яжіться з нами, щоб отримати унікальний промокод!

До бібліографії