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Статті в журналах з теми "FIB"
Liu, Ta-Wei, Chung-Feng Huang, Ming-Lun Yeh, Pei-Chien Tsai, Tyng-Yuan Jang, Jee-Fu Huang, Chia-Yen Dai, Wan-Long Chuang, and Ming-Lung Yu. "Less liver fibrosis marker increment in overweight chronic hepatitis B patients observed by age-adjusted Fibrosis-4 Index." BMJ Open Gastroenterology 7, no. 1 (December 2020): e000543. http://dx.doi.org/10.1136/bmjgast-2020-000543.
Повний текст джерелаHaub, Michael, Thomas Guenther, Martin Bogner, and André Zimmermann. "Use of PtC Nanotips for Low-Voltage Quantum Tunneling Applications." Micromachines 13, no. 7 (June 28, 2022): 1019. http://dx.doi.org/10.3390/mi13071019.
Повний текст джерелаKamada, Yoshihiro, Kensuke Munekage, Takashi Nakahara, Hideki Fujii, Yoshiyuki Sawai, Yoshinori Doi, Hideyuki Hyogo, et al. "The FIB-4 Index Predicts the Development of Liver-Related Events, Extrahepatic Cancers, and Coronary Vascular Disease in Patients with NAFLD." Nutrients 15, no. 1 (December 23, 2022): 66. http://dx.doi.org/10.3390/nu15010066.
Повний текст джерелаHu, Fupin, Jessica A. O'Hara, Jesabel I. Rivera та Yohei Doi. "Molecular Features of Community-Associated Extended-Spectrum-β-Lactamase-Producing Escherichia coli Strains in the United States". Antimicrobial Agents and Chemotherapy 58, № 11 (18 серпня 2014): 6953–57. http://dx.doi.org/10.1128/aac.03321-14.
Повний текст джерелаHaub, Michael, Thomas Günther, Martin Bogner, and André Zimmermann. "Investigation of Focused Ion and Electron Beam Platinum Carbon Nano-Tips with Transmission Electron Microscopy for Quantum Tunneling Vacuum Gap Applications." Applied Sciences 11, no. 24 (December 11, 2021): 11793. http://dx.doi.org/10.3390/app112411793.
Повний текст джерелаTashima, Janet, and Jay Lindquist. "Combining Focused Ion Beam and Scanning Electron Microscopy for IC Fab Support and Defect Review." Microscopy Today 4, no. 3 (April 1996): 18–19. http://dx.doi.org/10.1017/s1551929500067961.
Повний текст джерелаDonoso N., Tania, and María Isabel Villegas T. "Percepción materna del ajuste socioemocional de sus hijos preescolares: Estudio descriptivo y comparativo de familias separadas e intactas con alto y bajo nivel de ajuste marital." Revista de Psicología 9, no. 1 (January 1, 2000): 29. http://dx.doi.org/10.5354/0719-0581.2000.18544.
Повний текст джерелаSteinbaum, Ellen. "A Fib." JAMA 325, no. 11 (March 16, 2021): 1114. http://dx.doi.org/10.1001/jama.2020.25268.
Повний текст джерелаCórdoba, Rosa. "Editorial for the Special Issue on Nanofabrication with Focused Electron/Ion Beam Induced Processing." Micromachines 12, no. 8 (July 28, 2021): 893. http://dx.doi.org/10.3390/mi12080893.
Повний текст джерелаPhaneuf, Michael W., and Jian Li. "FIB Techniques for Analysis of Metallurgical Specimens." Microscopy and Microanalysis 6, S2 (August 2000): 524–25. http://dx.doi.org/10.1017/s143192760003511x.
Повний текст джерелаДисертації з теми "FIB"
Ostřížek, Petr. "Elektrotransportní vlastnosti nanostruktur připravených metodou FIB." Master's thesis, Vysoké učení technické v Brně. Fakulta strojního inženýrství, 2011. http://www.nusl.cz/ntk/nusl-229474.
Повний текст джерелаMucke, S. "Herstellung von Nanometer-Strukturen mittels feinfokussiertem Ionenstrahl (FIB)." Forschungszentrum Dresden, 2010. http://nbn-resolving.de/urn:nbn:de:bsz:d120-qucosa-28940.
Повний текст джерелаMucke, S. "Herstellung von Nanometer-Strukturen mittels feinfokussiertem Ionenstrahl (FIB)." Forschungszentrum Rossendorf, 2004. https://hzdr.qucosa.de/id/qucosa%3A21721.
Повний текст джерелаClaude, Jean-Benoît. "Etude des mécanismes de nanogravure par FIB-LMAIS." Thesis, Aix-Marseille, 2017. http://www.theses.fr/2017AIXM0445/document.
Повний текст джерелаThe reduction of device sizes represents a major issue in microelectronic industry which motivates several teams of researchers to develop nanopatterning with atomic resolution. In this context, maskless nanostructuration techniques are well-adapted and have an important potential for the nearest future in labs and industry. The aim of the project I worked on is the connection in a Ultra-High-Vacuum (UHV) environment between a Dual-Beam, equipped with a FIB (Focused Ion Beam) and a SEM (Scanning Electron Microscopy) and a MBE (Molecular Beam Epitaxy) cluster, which is the highest-controlled deposition technique. The UHV environment is the solution for an absolute cleanliness and represents a relevant way to fabricate functionalized devices for micro-nanoelectronics, optoelectronics, photovoltaic, spintronic, plasmonic, etc… This UHV connection combining FIB nanostructuration and epitaxy growth technique provides a unique platform to elaborate tridimensional structures with milling/deposition steps. Among different applications, we decided to focus on silicon based nanostructures. Regarding silicon nanostructures. The main challenge for microelectronics industry and for the researchers in this field is the realization of optoelectronics devices fully integrated in silicon systems. This requires to convert silicon based materials into absorber/emitter of light. One of the most promising way to change the electronic structure and to get a direct bandgap is the combination of chemical functionalization and quantum confinement into silicon based nano-objects
Guellil, Imene. "Nano-fonctionnalisation par FIB haute résolution de silicium." Electronic Thesis or Diss., Aix-Marseille, 2022. http://www.theses.fr/2022AIXM0361.
Повний текст джерелаThe goal of this work is to develop a process for the elaboration of silicon-germanium (SiGe) quantum dots (QDs) with compositions ranging from Si to pure Ge, and allowing to obtain semiconducting QDs with sufficiently small sizes to obtain quantum confinement. For this purpose, we have used a combination of different techniques: molecular beam epitaxy, focused ion beam lithography (FIBL) and heterogeneous solid state dewetting. In this context, the aim of this research is on the one hand to develop a new FIB that can be coupled to the ultra-high vacuum molecular beam epitaxy growth chamber, and on the other hand to realize two applications: (i) nanopatterns for the self-organisation of Si and Ge QDs and (ii) nano-implantations of Si and Ge. We used FIBL with energy-filtered liquid metal alloy ion sources (LMAIS) using non-polluting ions (Si and Ge) for the milling of conventional microelectronic substrates such as SiGe on silicon-on-insulator (SGOI). The nanopatterns must be totally free of pollution and with variable and perfectly controlled characteristics (size, density, depth). The morphology of the nanopatterns is then characterized in-situ by scanning electron microscopy (SEM), and the depth is determined ex-situ by atomic force microscopy (AFM). The nanopatterns made by FIBL were compared on the one hand to plasma etchings with He and Ne and on the other hand to the etchings obtained by electronic lithography (EBL). Nanoimplantations of Si and Ge ions were realised in diamond and in ultra-thin SGOI for the fabrication of local defects
Claude, Jean-Benoît. "Etude des mécanismes de nanogravure par FIB-LMAIS." Electronic Thesis or Diss., Aix-Marseille, 2017. http://www.theses.fr/2017AIXM0445.
Повний текст джерелаThe reduction of device sizes represents a major issue in microelectronic industry which motivates several teams of researchers to develop nanopatterning with atomic resolution. In this context, maskless nanostructuration techniques are well-adapted and have an important potential for the nearest future in labs and industry. The aim of the project I worked on is the connection in a Ultra-High-Vacuum (UHV) environment between a Dual-Beam, equipped with a FIB (Focused Ion Beam) and a SEM (Scanning Electron Microscopy) and a MBE (Molecular Beam Epitaxy) cluster, which is the highest-controlled deposition technique. The UHV environment is the solution for an absolute cleanliness and represents a relevant way to fabricate functionalized devices for micro-nanoelectronics, optoelectronics, photovoltaic, spintronic, plasmonic, etc… This UHV connection combining FIB nanostructuration and epitaxy growth technique provides a unique platform to elaborate tridimensional structures with milling/deposition steps. Among different applications, we decided to focus on silicon based nanostructures. Regarding silicon nanostructures. The main challenge for microelectronics industry and for the researchers in this field is the realization of optoelectronics devices fully integrated in silicon systems. This requires to convert silicon based materials into absorber/emitter of light. One of the most promising way to change the electronic structure and to get a direct bandgap is the combination of chemical functionalization and quantum confinement into silicon based nano-objects
Rose, Philip David. "High-resolution in situ FIB lithography of MBE GaAs." Thesis, University of Cambridge, 1998. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.624802.
Повний текст джерелаKonečný, Martin. "Aplikace KPM na povrchu grafén/Si modifikovaném metodou FIB." Master's thesis, Vysoké učení technické v Brně. Fakulta strojního inženýrství, 2013. http://www.nusl.cz/ntk/nusl-230836.
Повний текст джерелаElFallagh, Fathi Ali. "3D Analysis of Indentation Damage by FIB tomography and TEM." Thesis, University of Sheffield, 2008. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.500111.
Повний текст джерелаHouel, Arnaud. "Ecriture directe de motifs nanométriques assistée par STM et FIB." Aix-Marseille 2, 2002. http://www.theses.fr/2002AIX22063.
Повний текст джерелаКниги з теми "FIB"
Wang, Zhiming M., ed. FIB Nanostructures. Cham: Springer International Publishing, 2013. http://dx.doi.org/10.1007/978-3-319-02874-3.
Повний текст джерелаill, Swanson Maggie, and Wetzel Rick ill, eds. The fib. Waterbury, CT: Letter People Co., 2002.
Знайти повний текст джерелаThe big fib. London: Puffin, 2011.
Знайти повний текст джерелаillustrator, Hedderwick Mairi, ed. The big fib. Edinburgh: Barrington Stoke, 2015.
Знайти повний текст джерелаAnderson, Melissa. The big fib. Salt Lake City, Utah: Shadow Mountain, 2010.
Знайти повний текст джерелаLayton, George. The fib: And other stories. London: HarperCollins, 1994.
Знайти повний текст джерелаFarrell, Darren. Doug-Dennis and the flyaway fib. New York: Dial Books for Young Readers, 2010.
Знайти повний текст джерелаAyatrohaedi. FS-FIB UI di mata Ayatrohaedi. Depok: Fakultas Ilmu Pengetahuan Budaya, Universitas Indonesia, 2007.
Знайти повний текст джерелаfib. fib Model Code for Concrete Structures 2010. Weinheim, Germany: Wiley-VCH Verlag GmbH & Co. KGaA, 2013. http://dx.doi.org/10.1002/9783433604090.
Повний текст джерелаIan, Hislop, ed. Lord Gnome's complete fib and lie diet. London: Private Eye, 1991.
Знайти повний текст джерелаЧастини книг з теми "FIB"
Labille, Jérôme, Natalia Pelinovskaya, Céline Botta, Jean-Yves Bottero, Armand Masion, Dilip S. Joag, Richard G. Forbes, et al. "FIB-SEM." In Encyclopedia of Nanotechnology, 824. Dordrecht: Springer Netherlands, 2012. http://dx.doi.org/10.1007/978-90-481-9751-4_100246.
Повний текст джерелаBauch, Jürgen, and Rüdiger Rosenkranz. "FIB - Ionenfeinstrahltechnik." In Physikalische Werkstoffdiagnostik, 14–15. Berlin, Heidelberg: Springer Berlin Heidelberg, 2017. http://dx.doi.org/10.1007/978-3-662-53952-1_7.
Повний текст джерелаPrieto, Gonzalo. "FIB-SEM Tomography." In Encyclopedia of Membranes, 770–72. Berlin, Heidelberg: Springer Berlin Heidelberg, 2016. http://dx.doi.org/10.1007/978-3-662-44324-8_2211.
Повний текст джерелаPrieto, Gonzalo. "FIB-SEM Tomography." In Encyclopedia of Membranes, 1–3. Berlin, Heidelberg: Springer Berlin Heidelberg, 2015. http://dx.doi.org/10.1007/978-3-642-40872-4_2211-1.
Повний текст джерелаGiannuzzi, Lucille A. "FIB-SEM for Biomaterials." In Biological Field Emission Scanning Electron Microscopy, 517–32. Chichester, UK: John Wiley & Sons, Ltd, 2019. http://dx.doi.org/10.1002/9781118663233.ch24.
Повний текст джерелаLi, Jian, and Pei Liu. "On FIB Milling Parameters." In The Minerals, Metals & Materials Series, 3–9. Cham: Springer International Publishing, 2018. http://dx.doi.org/10.1007/978-3-319-72484-3_1.
Повний текст джерела"Fibs Don't Fib." In Technical Analysis of the Currency Market, 99–112. Hoboken, NJ, USA: John Wiley & Sons, Inc., 2015. http://dx.doi.org/10.1002/9781119201496.ch7.
Повний текст джерела"FIB-SEM." In Encyclopedia of Biophysics, 759. Berlin, Heidelberg: Springer Berlin Heidelberg, 2013. http://dx.doi.org/10.1007/978-3-642-16712-6_100318.
Повний текст джерела"FIB-SEM." In Encyclopedia of Nanotechnology, 1169. Dordrecht: Springer Netherlands, 2016. http://dx.doi.org/10.1007/978-94-017-9780-1_100332.
Повний текст джерелаFine, Michael, James W. Peters, and Robert S. Lawrence. "A. FIB." In The Nature of Health, 127–30. CRC Press, 2018. http://dx.doi.org/10.1201/9781315365398-19.
Повний текст джерелаТези доповідей конференцій з теми "FIB"
Michael, Joseph. "Introduction to FIB and applications: Plasma FIB and laser." In Proposed for presentation at the CCEM Lecture Series on Electron and Ion Microscopy held June 7-11, 2021 in Hamilton , Ontario, Canado. US DOE, 2021. http://dx.doi.org/10.2172/1870975.
Повний текст джерелаStegmann, Heiko, Hubert Schulz, and James Whitby. "FIB-SIMS in FIB-SEMs—Practical Aspects for Physical Failure Analysis." In ISTFA 2022. ASM International, 2022. http://dx.doi.org/10.31399/asm.cp.istfa2022p0257.
Повний текст джерелаGadkari, Kaustubh, M. Lawrence Weikum, Dan Massey, and Christos Papadopoulos. "Pragmatic router FIB caching." In 2015 IFIP Networking Conference (IFIP Networking). IEEE, 2015. http://dx.doi.org/10.1109/ifipnetworking.2015.7145296.
Повний текст джерелаSuzuki, Eiji, Josh Adams, Calvin Ball, Tim McCready, and Sonya Robinson. "FIB on Test Board." In ISTFA 2016. ASM International, 2016. http://dx.doi.org/10.31399/asm.cp.istfa2016p0402.
Повний текст джерелаBonifacio, C. S., P. Nowakowski, M. J. Campin, M. L. Ray, and P. E. Fischione. "Low Energy Ar Ion Milling of FIB TEM Specimens from 14 nm and Future FinFET Technologies." In ISTFA 2018. ASM International, 2018. http://dx.doi.org/10.31399/asm.cp.istfa2018p0241.
Повний текст джерелаMoore, Thomas M. "Nanomechanical Characterization in the FIB." In ISTFA 2005. ASM International, 2005. http://dx.doi.org/10.31399/asm.cp.istfa2005p0209.
Повний текст джерелаSarrar, Nadi, Robert Wuttke, Stefan Schmid, Marcin Bienkowski, and Steve Uhlig. "Leveraging locality for FIB aggregation." In GLOBECOM 2014 - 2014 IEEE Global Communications Conference. IEEE, 2014. http://dx.doi.org/10.1109/glocom.2014.7037090.
Повний текст джерелаYun-Ru Wu, Shu-Yi Kao, and Shih-Arn Hwang. "Minimizing ECO routing for FIB." In 2010 International Symposium on VLSI Design, Automation and Test (VLSI-DAT). IEEE, 2010. http://dx.doi.org/10.1109/vdat.2010.5496675.
Повний текст джерелаGiannuzzi, Lucille A. "Multi-signal FIB/SEM tomography." In SPIE Defense, Security, and Sensing. SPIE, 2012. http://dx.doi.org/10.1117/12.919821.
Повний текст джерелаKaufmann, Henry C., William B. Thompson, and Gregory J. Dunn. "Fib Mask Repair With Microtrim." In 1986 Microlithography Conferences, edited by Phillip D. Blais. SPIE, 1986. http://dx.doi.org/10.1117/12.963669.
Повний текст джерелаЗвіти організацій з теми "FIB"
Shul, Randy J., Michael J. Rye, Greg Salazar, and Steve Ball. FEI FIB/SEM Failure Analysis. Office of Scientific and Technical Information (OSTI), January 2019. http://dx.doi.org/10.2172/1492079.
Повний текст джерелаCampbell, A. N., D. M. Tanner, J. M. Soden, E. Adams, M. Gibson, M. Abramo, A. Doyle, and D. K. Stewart. Electrical and chemical characterization of FIB-deposited insulators. Office of Scientific and Technical Information (OSTI), October 1997. http://dx.doi.org/10.2172/532558.
Повний текст джерелаOgura, K. S., S. B. Donald, and B. W. Chung. Improving Microstructural Quantification in 3D FIB-SEM Tomography. Office of Scientific and Technical Information (OSTI), September 2019. http://dx.doi.org/10.2172/1566797.
Повний текст джерелаTrotter, G. Terminology for Forwarding Information Base (FIB) based Router Performance. RFC Editor, December 2001. http://dx.doi.org/10.17487/rfc3222.
Повний текст джерелаHarmer, M. P. A Focused-Ion Beam (FIB) Nano-Fabrication and Characterization Facility. Fort Belvoir, VA: Defense Technical Information Center, November 2002. http://dx.doi.org/10.21236/ada408750.
Повний текст джерелаTegtmeier, Eric, and Caitlin Taylor. Single Crystal UO2 cube creation using a Xe Plasma FIB. Office of Scientific and Technical Information (OSTI), October 2020. http://dx.doi.org/10.2172/1688725.
Повний текст джерелаBradley, J., Z. Dai, G. Graham, and N. Teslich. Final Report - SRNL Agreement #AC51296V SEM, FIB, TEM Studies of CZT Samples. Office of Scientific and Technical Information (OSTI), August 2007. http://dx.doi.org/10.2172/924965.
Повний текст джерелаWall, M., M. Fluss, and C. Schaldach. Dual Beam FIB for Imaging, Nano-Sectioning and Sample Preparation of Spores: Initial Results. Office of Scientific and Technical Information (OSTI), April 2004. http://dx.doi.org/10.2172/892791.
Повний текст джерелаGillor, Osnat, Stefan Wuertz, Karen Shapiro, Nirit Bernstein, Woutrina Miller, Patricia Conrad, and Moshe Herzberg. Science-Based Monitoring for Produce Safety: Comparing Indicators and Pathogens in Water, Soil, and Crops. United States Department of Agriculture, May 2013. http://dx.doi.org/10.32747/2013.7613884.bard.
Повний текст джерелаIto, Takatoshi, and Masahiro Yamada. Did the Reform Fix the London Fix Problem? Cambridge, MA: National Bureau of Economic Research, April 2017. http://dx.doi.org/10.3386/w23327.
Повний текст джерела