Добірка наукової літератури з теми "ESD physics"
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Статті в журналах з теми "ESD physics"
Jauhariyah, M. N. R., B. K. Prahani, K. Syahidi, U. A. Deta, N. A. Lestari, and E. Hariyono. "ESD for physics: how to infuse education for sustainable development (ESD) to the physics curricula?" Journal of Physics: Conference Series 1747, no. 1 (February 1, 2021): 012032. http://dx.doi.org/10.1088/1742-6596/1747/1/012032.
Повний текст джерелаKrabbenborg, Benno, Reinier Beltman, Philip Wolbert, and Ton Mouthaan. "Physics of electro-thermal effects in ESD protection devices." Journal of Electrostatics 28, no. 3 (September 1992): 285–99. http://dx.doi.org/10.1016/0304-3886(92)90077-7.
Повний текст джерелаAlvarez, D., M. J. Abou-Khalil, C. Russ, K. Chatty, R. Gauthier, D. Kontos, J. Li, C. Seguin, and R. Halbach. "Analysis of ESD failure mechanism in 65nm bulk CMOS ESD NMOSFETs with ESD implant." Microelectronics Reliability 46, no. 9-11 (September 2006): 1597–602. http://dx.doi.org/10.1016/j.microrel.2006.07.041.
Повний текст джерелаPaul, Milova, Christian Russ, B. Sampath Kumar, Harald Gossner, and Mayank Shrivastava. "Physics of Current Filamentation in ggNMOS Devices Under ESD Condition Revisited." IEEE Transactions on Electron Devices 65, no. 7 (July 2018): 2981–89. http://dx.doi.org/10.1109/ted.2018.2835831.
Повний текст джерелаSinha, Dheeraj Kumar, and Amitabh Chatterjee. "SPICE level implementation of physics of filamentation in ESD protection devices." Microelectronics Reliability 79 (December 2017): 239–47. http://dx.doi.org/10.1016/j.microrel.2017.05.022.
Повний текст джерелаXu, Ke, Xing Chen, and Zhenzhen Chen. "A Physics-based Transient Simulation and Modeling Method for Wide-frequency Electrical Overstress Including ESD." Applied Computational Electromagnetics Society 36, no. 5 (June 14, 2021): 505–12. http://dx.doi.org/10.47037/2020.aces.j.360503.
Повний текст джерелаLiu, Xiao Yu, Jiang Shao, Xing Hao Wang, and Feng Ming Lu. "Research Progress on Electrostatic Discharge Failure Models in Semiconductor Materials." Advanced Materials Research 548 (July 2012): 527–31. http://dx.doi.org/10.4028/www.scientific.net/amr.548.527.
Повний текст джерелаRushby, Nick. "Editorial: Recent references." Education and Self Development 17, no. 1 (March 31, 2022): 6–7. http://dx.doi.org/10.26907/esd.17.1.01.
Повний текст джерелаRushby, Nick. "Editorial: Recent references." Education and Self Development 17, no. 1 (March 31, 2022): 8–9. http://dx.doi.org/10.26907/esd.17.1.01r.
Повний текст джерелаStadler, Wolfgang, Tilo Brodbeck, Reinhold Gärtner, and Harald Gossner. "Do ESD fails in systems correlate with IC ESD robustness?" Microelectronics Reliability 49, no. 9-11 (September 2009): 1079–85. http://dx.doi.org/10.1016/j.microrel.2009.07.029.
Повний текст джерелаДисертації з теми "ESD physics"
Chen, Tze Wee. "A physics-based design methodology for digital systems robust to ESD-CDM events /." May be available electronically:, 2009. http://proquest.umi.com/login?COPT=REJTPTU1MTUmSU5UPTAmVkVSPTI=&clientId=12498.
Повний текст джерелаErtenberg, Randolph. "CoGe&esc;b1&esc;s&&dotb;esc;b5&esc;sSe&esc;b1&esc;s&&dotb;esc;b5&esc;s [electronic resource] : structural and transport properties characterization / by Randolph Ertenberg." University of South Florida, 2003. http://purl.fcla.edu/fcla/etd/SFE0000130.
Повний текст джерелаDocument formatted into pages; contains 43 pages.
Thesis (M.S.)--University of South Florida, 2003.
Includes bibliographical references.
Text (Electronic thesis) in PDF format.
ABSTRACT: Skutterudites have been of great interest for thermoelectric applications over the last ten years. Scientific interest has focused on the unique transport properties Skutterudites possess due to the unique crystal structure. Technical interest has grown since it was discovered that some compounds rival the current best thermoelectric materials. To further the understanding of this material system, and optimize its thermoelectric properties, the synthesis and characterization of polycrystalline n- and p-type CoGe&esc;b1&esc;s&&dotb;esc;b5&esc;sSe&esc;b1&esc;s&&dotb;esc;b5&esc;s was undertaken. Structural, morphological, chemical, electrical, thermal and magnetic properties were studied. These data are compared to those of the binary Skutterudite CoSb3. The results of this study show a very sensitive dependence of the physical properties on stoichiometry.
ABSTRACT: While the thermoelectric figure of merit is low in these materials, it is apparent that optimization via doping and "void filling" will lead to improved thermoelectric properties.
System requirements: World Wide Web browser and PDF reader.
Mode of access: World Wide Web.
Xu, Chen. "Advanced Topographic Characterization of Variously Prepared Niobium Surfaces and Linkage to RF Losses." W&M ScholarWorks, 2013. https://scholarworks.wm.edu/etd/1539623621.
Повний текст джерелаBertin, Mathieu. "Processus induits par les électrons de basse énergie (0-20 eV) dans les systèmes condensés." Phd thesis, Université Paris Sud - Paris XI, 2007. http://tel.archives-ouvertes.fr/tel-00280603.
Повний текст джерелаWeidong, Yang. "Pupil phase apodization for achromatic imaging of extra-solar planets." Available online. Click here, 2004. http://services.lib.mtu.edu/etd/DISS/2004/Physics/yangw/diss.pdf.
Повний текст джерелаVoyantzis, Mitchell D. "CloudMEMS Platform for Design and Simulation of MEMS: Physics Modules & End-to-End Testing." University of Toledo / OhioLINK, 2018. http://rave.ohiolink.edu/etdc/view?acc_num=toledo1533226484963866.
Повний текст джерелаde, la Puente Alejandro M. "Kaon photoproduction of the proton: contribution of higher angular momentum and energy resonances to the cross-section and polarization asymmetries through an effective Lagrangian model." FIU Digital Commons, 2008. http://digitalcommons.fiu.edu/etd/3014.
Повний текст джерелаDominquez, Alberto Luis. "Meson-meson scattering in 2+1 dimensional lattice quantum electrodynamics." FIU Digital Commons, 1994. http://digitalcommons.fiu.edu/etd/3634.
Повний текст джерелаFaxas, Miguel A. Jr. "Experiments in the dissociative recombination of xenon and krypton." FIU Digital Commons, 2005. http://digitalcommons.fiu.edu/etd/3288.
Повний текст джерелаKhammang, Alex. "Investigating Mechanical Properties of Metallic Nanowires using Molecular Dynamics." VCU Scholars Compass, 2014. http://scholarscompass.vcu.edu/etd/3409.
Повний текст джерелаКниги з теми "ESD physics"
Voldman, Steven Howard. ESD Physics and Devices. New York: John Wiley & Sons, Ltd., 2005.
Знайти повний текст джерелаCharged device model (CDM) ESD in ICs: Physics, modeling, and circuit simulation. Konstanz: Hartung-Gorre, 2006.
Знайти повний текст джерелаJ, Mergens Markus P. On-chip ESD protection in integrated circuits: Device physics, modeling, circuit simulation. Konstanz: Hartung-Gorre, 2001.
Знайти повний текст джерелаHow experiments end. Chicago: University of Chicago Press, 1987.
Знайти повний текст джерелаSaini, Rakesh. Human hand/metal ESD and its physical simulation. Ottawa: National Library of Canada, 1995.
Знайти повний текст джерелаGalison, Peter Louis. How experiments end. Chicago: University of Chicago Press, 1987.
Знайти повний текст джерелаThe end of time: The next revolution in physics. Oxford: Oxford University Press, 2000.
Знайти повний текст джерелаundifferentiated, David Lindley. The end ofphysics: The myth of a unified theory. New York: BasicBooks, 1993.
Знайти повний текст джерелаSaint-Aubin, Yvan, and Luc Vinet, eds. Theoretical Physics at the End of the Twentieth Century. New York, NY: Springer New York, 2002. http://dx.doi.org/10.1007/978-1-4757-3671-7.
Повний текст джерелаYvan, Saint-Aubin, and Vinet Luc, eds. Theoretical physics at the end of the twentieth century: Lecture notes of the CRM summer school, Banff, Alberta. New York: Springer, 2002.
Знайти повний текст джерелаЧастини книг з теми "ESD physics"
Kolyer, John M., and Donald E. Watson. "Basic Physics." In ESD from A to Z, 3–13. Boston, MA: Springer US, 1996. http://dx.doi.org/10.1007/978-1-4613-1177-5_2.
Повний текст джерелаVinson, James E., Joseph C. Bernier, Gregg D. Croft, and Juin J. Liou. "Physics and Models of an ESD Event." In ESD Design and Analysis Handbook, 1–64. Boston, MA: Springer US, 2003. http://dx.doi.org/10.1007/978-1-4615-0321-7_1.
Повний текст джерелаMeneghini, M., G. Meneghesso, and E. Zanoni. "Electrical Properties, Reliability Issues, and ESD Robustness of InGaN-Based LEDs." In Topics in Applied Physics, 197–229. Dordrecht: Springer Netherlands, 2013. http://dx.doi.org/10.1007/978-94-007-5863-6_8.
Повний текст джерелаMeneghini, M., G. Meneghesso, and E. Zanoni. "Electrical Properties, Reliability Issues, and ESD Robustness of InGaN-Based LEDs." In Topics in Applied Physics, 363–95. Singapore: Springer Singapore, 2017. http://dx.doi.org/10.1007/978-981-10-3755-9_13.
Повний текст джерелаIoannou, D. E., Z. Chbili, A. Z. Badwan, Q. Li, Y. Yang, and A. A. Salman. "Physics and Design of Nanoscale Field Effect Diodes for Memory and ESD Protection Applications." In Future Trends in Microelectronics, 73–80. Hoboken, NJ, USA: John Wiley & Sons, Inc., 2013. http://dx.doi.org/10.1002/9781118678107.ch4.
Повний текст джерелаSimons, B. D., and A. Altland. "Mesoscopic Physics." In Theoretical Physics at the End of the Twentieth Century, 451–566. New York, NY: Springer New York, 2002. http://dx.doi.org/10.1007/978-1-4757-3671-7_6.
Повний текст джерелаWang, Rui-Wu. "The Unity of Life and Physics." In The End of Rationality and Selfishness, 165–82. Singapore: Springer Nature Singapore, 2023. http://dx.doi.org/10.1007/978-981-19-9752-5_11.
Повний текст джерелаHafemeister, David. "Enhanced End-Use Efficiency." In Physics of Societal Issues, 465–506. New York, NY: Springer New York, 2013. http://dx.doi.org/10.1007/978-1-4614-9272-6_14.
Повний текст джерелаMiyamoto, Kenro. "Open End System." In Plasma Physics for Controlled Fusion, 423–38. Berlin, Heidelberg: Springer Berlin Heidelberg, 2016. http://dx.doi.org/10.1007/978-3-662-49781-4_18.
Повний текст джерелаNicholls, David A. "Physical therapies before 1894." In The End of Physiotherapy, 19–41. Abingdon, Oxon; New York, NY: Routledge, 2017. |: Routledge, 2017. http://dx.doi.org/10.4324/9781315561868-2.
Повний текст джерелаТези доповідей конференцій з теми "ESD physics"
Khandelwal, S., and D. Bavi. "ASM-ESD – A comprehensive physics-based compact model for ESD Diodes." In 2022 IEEE International Reliability Physics Symposium (IRPS). IEEE, 2022. http://dx.doi.org/10.1109/irps48227.2022.9764453.
Повний текст джерелаLin, I.-Cheng, Che-Yuan Jao, Rei-Fu Huang, Cheng-Hsing Chien, Chien-Hui Chuang, Chen-Feng Chiang, and Bo-Shih Huang. "Latchup test failure from ESD protection circuit activation beyond ESD stress condition." In 2009 IEEE International Reliability Physics Symposium. IEEE, 2009. http://dx.doi.org/10.1109/irps.2009.5173345.
Повний текст джерелаReinvuo, Tuomas, Timo Tarvainen, and Toni Viheriakoski. "Simulation and physics of charged board model for ESD." In 2007 29th Electrical Overstress/Electrostatic Discharge Symposium (EOS/ESD). IEEE, 2007. http://dx.doi.org/10.1109/eosesd.2007.4401769.
Повний текст джерелаDuvvury, C., R. N. Rountree, H. J. Stiegler, T. Polgreen, and D. Corum. "ESD Phenomena in Graded Junction Devices." In 27th International Reliability Physics Symposium. IEEE, 1989. http://dx.doi.org/10.1109/irps.1989.363364.
Повний текст джерелаDuvvury, Charvaka. "Paradigm shift in ESD qualification." In 2008 IEEE International Reliability Physics Symposium (IRPS). IEEE, 2008. http://dx.doi.org/10.1109/relphy.2008.4558855.
Повний текст джерелаYen, Cheng-Cheng, and Ming-Dou Ker. "Failure of On-Chip Power-Rail ESD Clamp Circuits During System-Level ESD Test." In 2007 IEEE International Reliability Physics Symposium Proceedings. IEEE, 2007. http://dx.doi.org/10.1109/relphy.2007.369969.
Повний текст джерелаLin, D. L. "Thermal Breakdown of VLSI by ESD Pulses." In 28th International Reliability Physics Symposium. IEEE, 1990. http://dx.doi.org/10.1109/irps.1990.363534.
Повний текст джерелаAur, S., A. Chatterjee, and T. Polgreen. "Hot Electron Reliability and ESD Latent Damage." In 26th International Reliability Physics Symposium. IEEE, 1988. http://dx.doi.org/10.1109/irps.1988.362193.
Повний текст джерелаFong, Y., and C. Hu. "Internal ESD Transients in Input Protection Circuits." In 27th International Reliability Physics Symposium. IEEE, 1989. http://dx.doi.org/10.1109/irps.1989.363365.
Повний текст джерелаGossner, H., and J. Schneider. "Novel devices in ESD protection." In 2007 International Workshop on Physics of Semiconductor Devices. IEEE, 2007. http://dx.doi.org/10.1109/iwpsd.2007.4472458.
Повний текст джерелаЗвіти організацій з теми "ESD physics"
Matthews, W. Internet end-to-end performance monitoring for the High Energy Nuclear and Particle Physics community. Office of Scientific and Technical Information (OSTI), February 2000. http://dx.doi.org/10.2172/753304.
Повний текст джерелаBaldin, Boris, and Lou DalMonte. Scintillation counter and wire chamber front end modules for high energy physics experiments. Office of Scientific and Technical Information (OSTI), January 2011. http://dx.doi.org/10.2172/1005351.
Повний текст джерелаBlack, Kevin. Exotic Physics with the Top Quark at the LHC. End of grant report. Office of Scientific and Technical Information (OSTI), July 2013. http://dx.doi.org/10.2172/1088779.
Повний текст джерелаTywoniak, Jan, Kateřina Sojková, and Zdenko Malík. Building Physics in Living Lab. Department of the Built Environment, 2023. http://dx.doi.org/10.54337/aau541565072.
Повний текст джерелаPerdigão, Rui A. P. Earth System Dynamic Intelligence - ESDI. Meteoceanics, April 2021. http://dx.doi.org/10.46337/esdi.210414.
Повний текст джерелаZhang, Fan, Ying Zhang, Liuyan Huang, and Wenqin Zhou. Interventions for promoting physical activity in patients with end stage renal disease receiving hemodialysis. INPLASY - International Platform of Registered Systematic Review Protocols, March 2020. http://dx.doi.org/10.37766/inplasy2020.3.0013.
Повний текст джерелаBretherton, Christopher, Po-Lun Ma, and Peter Caldwell. Transforming ESM Physical Parameterization Development Using Machine Learning Trained on Global Cloud-Resolving Models and Process Observations. Office of Scientific and Technical Information (OSTI), April 2021. http://dx.doi.org/10.2172/1769790.
Повний текст джерелаPerdigão, Rui A. P. Beyond Quantum Security with Emerging Pathways in Information Physics and Complexity. Synergistic Manifolds, June 2022. http://dx.doi.org/10.46337/220602.
Повний текст джерелаSecond Physical Activity Almanac. Chair Andrea Ramírez Varela. Ediciones Uniandes, November 2021. http://dx.doi.org/10.51572/202102.
Повний текст джерелаSharp, Jeremy, Locke Williams, Duncan Bryant, Jake Allgeier, Kevin Pigg, Gary Bell, and Dana Moses. Rough River Outlet Works physical model study. Engineer Research and Development Center (U.S.), June 2021. http://dx.doi.org/10.21079/11681/41043.
Повний текст джерела