Готові списки джерел за темами / Electronic Transport Properties -Graphene

Добірка наукової літератури з теми "Electronic Transport Properties -Graphene"

Автор: Grafiati
Опубліковано: 7 вересня 2023

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Статті в журналах з теми "Electronic Transport Properties -Graphene"

1

Wakabayashi, Katsunori. "Electronic transport properties of graphene nanostructures." Acta Crystallographica Section A Foundations and Advances 70, a1 (August 5, 2014): C197. http://dx.doi.org/10.1107/s2053273314098027.

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The electronic states of graphene near the Fermi energy are well described by massless Dirac Fermion. The presence of edges, however, makes strong implications for the spectrum of the electrons. In graphene nanoribbons with zigzag edges, localized states appear at the edge with energies close to the Fermi level. In contrast, edge states are absent for ribbons with armchair edges. In my talk, we focus on edge and nanoscale effect on the electronic properties of graphene nanoribbons. We discuss the following aspects of graphene nanostructured systems. (1) In zigzag nanoribbons, for nonmagnetic long-ranged disorder, a single perfectly conducting channel emerges associated with a chiral mode due to the edge state, i.e., the absence of the localization in this class. (2) We show the electronic transport properties of graphene nanojunctions crucially depend on the peripheral lattice structures. The condition for electron confinement is discussed. (3) We will discuss the effect of edge chemical modification on magnetic properties of nanographene systems. Also, we discuss the hole doping effect on the spin-polarized states appearing along the graphene zigzag edges. Our studies reveal that the peculiar electronic, magnetic and transport properties of graphene nanostructured systems. In addition, we present our recent work on graphene double layer structure (GDLS), where two graphene layers are separated by a thin dielectric. We will discuss the dielectric environment effect on the charged-impurity-limited carrier mobility of the GDLS on the basis of the Boltzmann transport theory. It is found that carrier mobility strongly depends on the dielectric constant of the barrier layer if the interlayer distance becomes larger than the inverse of the Fermi wave vector. Our results suggest effective use of ultra-thin dielectric barriers and a practical design strategy to improve the charged-impurity-limited mobility of the GDLS.
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2

CUONG, NGUYEN TIEN, HIROSHI MIZUTA, BACH THANH CONG, NOBUO OTSUKA, and DAM HIEU CHI. "AB-INITIO CALCULATIONS OF ELECTRONIC PROPERTIES AND QUANTUM TRANSPORT IN U-SHAPED GRAPHENE NANORIBBONS." International Journal of Computational Materials Science and Engineering 01, no. 03 (September 2012): 1250030. http://dx.doi.org/10.1142/s2047684112500303.

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Graphene is a promising candidate as a material used in nano-scale devices because of recent developments in advanced experimental techniques. Motivated by recent successful fabrications of U-shaped graphene channel transistors by using the gallium focused ion beam technology, we have performed ab-initio calculations to investigate the electronic properties and quantum transport in U-shaped graphene nanoribbons. The electronic properties are calculated using a numerical atomic orbital basis set in the framework of the density functional theory. The transport properties are investigated using the non-equilibrium Green's function method. The transmission spectra of U-shaped graphenes are analyzed in order to reveal the quantum transport of the systems. We found that the graphene nanoribbons tend to open a band gap when U-shaped structures are formed in both armchair and zigzag cases. The geometrical structures of U-shaped GNRs had enormous influences on the electron transport around the Fermi energy due to the formation of quasi-bound states at zigzag edges. The obtained results have provided valuable information for designing potential nano-scale devices based on graphenes.
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3

Pradeepkumar, Aiswarya, D. Kurt Gaskill, and Francesca Iacopi. "Electronic and Transport Properties of Epitaxial Graphene on SiC and 3C-SiC/Si: A Review." Applied Sciences 10, no. 12 (June 24, 2020): 4350. http://dx.doi.org/10.3390/app10124350.

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The electronic and transport properties of epitaxial graphene are dominated by the interactions the material makes with its surroundings. Based on the transport properties of epitaxial graphene on SiC and 3C-SiC/Si substrates reported in the literature, we emphasize that the graphene interfaces formed between the active material and its environment are of paramount importance, and how interface modifications enable the fine-tuning of the transport properties of graphene. This review provides a renewed attention on the understanding and engineering of epitaxial graphene interfaces for integrated electronics and photonics applications.
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4

Wakabayashi, Katsunori, Yositake Takane, Masayuki Yamamoto, and Manfred Sigrist. "Electronic transport properties of graphene nanoribbons." New Journal of Physics 11, no. 9 (September 30, 2009): 095016. http://dx.doi.org/10.1088/1367-2630/11/9/095016.

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5

Rasmussen, Jesper Toft, Tue Gunst, Peter Bøggild, Antti-Pekka Jauho, and Mads Brandbyge. "Electronic and transport properties of kinked graphene." Beilstein Journal of Nanotechnology 4 (February 15, 2013): 103–10. http://dx.doi.org/10.3762/bjnano.4.12.

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Local curvature, or bending, of a graphene sheet is known to increase the chemical reactivity presenting an opportunity for templated chemical functionalisation. Using first-principles calculations based on density functional theory (DFT), we investigate the reaction barrier reduction for the adsorption of atomic hydrogen at linear bends in graphene. We find a significant barrier lowering (≈15%) for realistic radii of curvature (≈20 Å) and that adsorption along the linear bend leads to a stable linear kink. We compute the electronic transport properties of individual and multiple kink lines, and demonstrate how these act as efficient barriers for electron transport. In particular, two parallel kink lines form a graphene pseudo-nanoribbon structure with a semimetallic/semiconducting electronic structure closely related to the corresponding isolated ribbons; the ribbon band gap translates into a transport gap for electronic transport across the kink lines. We finally consider pseudo-ribbon-based heterostructures and propose that such structures present a novel approach for band gap engineering in nanostructured graphene.
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6

Kolli, Venkata Sai Pavan Choudary, Vipin Kumar, Shobha Shukla, and Sumit Saxena. "Electronic Transport in Oxidized Zigzag Graphene Nanoribbons." MRS Advances 2, no. 02 (2017): 97–101. http://dx.doi.org/10.1557/adv.2017.55.

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ABSTRACT The electronic and transport properties of graphene nanoribbons strongly depends on different types of adatoms. Oxygen as adatom on graphene is expected to resemble oxidized graphene sheets and enable in understanding their transport properties. Here, we report the transport properties of oxygen adsorbed zigzag edge saturated graphene nanoribbon. It is interesting to note that increasing the number of oxygen adatoms on graphene sheets lift the spin degeneracy as observed in the transmission profile of graphene nanoribbons. The relative orientation of the oxygen atom on the graphene basal plane is detrimental to flow of spin current in the nanoribbon.
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7

Fujimoto, Yoshitaka. "Quantum transport, electronic properties and molecular adsorptions in graphene." Modern Physics Letters B 35, no. 08 (February 9, 2021): 2130001. http://dx.doi.org/10.1142/s0217984921300015.

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Molecular sensor applications are used in different fields including environmental monitoring and medical diagnosis. Graphene, a single atomic layer consisting of the hexagonally arranged carbon material, is one of the most promising materials for ideal channels in field-effect transistors to be used as electronic sensing applications owing to its lightweight, mechanical robustness, high electronic conductivity and large surface-to-volume ratio. This paper provides a review of molecular adsorptions, electronic properties and quantum transport of graphene based on the first-principles density-functional study. The adsorption properties of environmentally polluting or toxic molecules and electronic transport of graphene are revealed. The possibility of detecting these molecules selectively is also discussed for designing the graphene-based sensor applications.
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8

Ando, Tsuneya. "Exotic electronic and transport properties of graphene." Physica E: Low-dimensional Systems and Nanostructures 40, no. 2 (December 2007): 213–27. http://dx.doi.org/10.1016/j.physe.2007.06.003.

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9

Wakabayashi, Katsunori, Yositake Takane, and Manfred Sigrist. "Electronic transport properties of disordered graphene nanoribbons." Journal of Physics: Conference Series 150, no. 2 (February 1, 2009): 022097. http://dx.doi.org/10.1088/1742-6596/150/2/022097.

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10

Treske, Uwe, Frank Ortmann, Björn Oetzel, Karsten Hannewald, and Friedhelm Bechstedt. "Electronic and transport properties of graphene nanoribbons." physica status solidi (a) 207, no. 2 (January 5, 2010): 304–8. http://dx.doi.org/10.1002/pssa.200982445.

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Дисертації з теми "Electronic Transport Properties -Graphene"

1

Poole, Christopher J. "Electronic and transport properties of graphene nanostructures." Thesis, Lancaster University, 2012. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.654742.

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2

Britnell, Liam Richard. "Electronic transport properties of graphene-based heterostructures." Thesis, University of Manchester, 2013. https://www.research.manchester.ac.uk/portal/en/theses/electronic-transport-properties-of-graphenebased-heterostructures(db9e8d20-c1a4-401c-85d9-c62ebd5c4d2c).html.

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Heterostructures fabricated from atomically thin crystalline layers are new materials which offer exciting possibilities for next-generation electronic and optoelectronic sensors and devices. The idea of heterostructures is not new and traditional semiconductor heterostructures have already played an important technological role in many modern electronic components. It is possible to fabricate new and exciting structures by stacking single atomic layers of different materials into heterostructures. This technology can be used to create materials and devices with a wide variety of properties. The stacking order, thickness, doping and crystal orientation play the major roles in determining the characteristics of these new materials. The experimental work for this thesis involves the electrical characterisation of several different heterostructures.i Investigation of boron nitride as an atomically thin tunnel barrier, including its homogeneity across micron sized areas. The area normalised conductance was found to depend on boron nitride thickness, changing by 1.5 decades per layer.ii Graphene-based tunnelling transistors which exhibit current modulation by external gate voltage. With boron nitride as the tunnel barrier an on-off ratio of up to 40 was acheived.iii Resonant tunnelling devices which show negative differential conductivity in their current-voltage characteristics.iv Photodetection and solar cell devices using semiconducting tungsten disulfide. The maximum external quantum efficiency observed was 0.1 A/W which was approximately constant across the visible spectrum. The enormous array of possibilities made available by this technology means that there is huge scope for further investigation with more exploratory research to make proof-of-principle functional devices for application in technology.
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3

Burgos, Atencia Rhonald. "Electronic transport properties of graphene sheets under strain." Niterói, 2017. https://app.uff.br/riuff/handle/1/2932.

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Conselho Nacional de Desenvolvimento Científico e Tecnológico
Nesta tese estudamos três problemas teóricos relacionados ao grafeno e um problema relacionado a um sistema bosônico interagente e desordenado em uma dimensão. Sobre o grafeno, estudamos alguns efeitos das deformações. Primeiro, calculamos o efeito de campos magnéticos aleatórios devido às deformações fora do plano em uma folha de grafeno na condutividade de Boltzmann. Encontramos que essas deformações são uma fonte importante de desordem para condutividade. Tamb em estudamos as oscilações de Weiss no grafeno devido a deformações unidimensionais. Usamos uma equação de Boltzmann quântica e teoria de perturbações até primeira ordem para resolver esse problema. Encontramos valores acessíveis experimentalmente para a condutividade. O efeito de localização fraca na conductividade é ainda um problema em andamento. Mesmo sabendo que o pseudo-campo magnético devido a deformações não quebra a simetria de inversão temporal quando considerados os dois valleys, acreditamos que a parte respons avel pelo espalhamento intra-valleys deve sentir o efeito desse pseudo-campo. O tempo de desfasagem devido a esse campo foi calculado. O problema de sistemas bosônicos tamb em está ainda em andamento. Identificamos algumas dificuldades na teoria de perturbações usada normalmente para sistemas fermiônicos e uma possivel forma de resolver esse problema.
In this thesis we address three theoretical problems related to electronic transport properties of graphene and one related to interacting Bosonic systems with disorder in one dimension. Concerning graphene, we have studied some efects of strain. First, we calculated the efect of random gauge fields due to out of plane deformation in the Boltzmann conductivity. We have found that strain plays an important role as a disorder source that limits the conductivity. We have also studied Weiss oscillation in graphene due to uniaxial strain. We have used a quantum Boltzmann approach and first order perturbution theory to this end. We found measurable values to the conductivity in this system. The efect of weak localization is still a work in progress. Although the pseudo magnetic field in graphene does not break time reversal symmetry in the two valleys, we believe that the channel responsable for intravalley scattering must be sensitive to dephasing due to strain. This dephasing time has been calculated. Concerning the Bosonic system, this is also a work in progress. We have identified some difculties in the standard procedure of perturbation theory when applied to this system and a possible way to face them.
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4

Sonde, Sushant. "Local transport properties in graphene for electronic applications." Thesis, Universita' degli Studi di Catania, 2011. http://hdl.handle.net/10761/91.

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In view of possible applications in electrostatically tunable two-dimensional field-effect devices, this thesis is aimed at discussing electronic properties in substrate-supported graphene. Original methods based on various variants of Scanning Probe Microscopy techniques are utilized to analyze graphene exfoliated- and-deposited (DG) on SiO2 /Si, SiC(0001) and high-k dielectric substrate (Strontium Titanate) as well as graphene grown epitaxially (EG) on SiC(0001). Scanning Capacitance Spectroscopy is discussed as a probe to evaluate the electrostatic properties (quantum capacitance, local density of states) and transport properties (local electron mean free path) in graphene. Furthermore, based on this method two important issues adversely affecting room temperature charge transport in graphene are addressed to elucidate the role of: 1. Lattice defects in graphene introduced by ion irradiation and 2. Charged impurities and Surface Polar Phonon scattering at the graphene/substrate interface. Moreover, a comparative investigation of current transport across EG/SiC(0001) and DG/SiC(0001) interface by Scanning Current Spectroscopy and Torsion Resonance Conductive Atomic Force Microscopy is discussed to explain electrical properties of the so-called 'buffer layer' commonly observed at the interface of EG/SiC(0001). This study also clarifies the local workfunction variation in EG due to electrically active buffer layer.
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5

Plachinda, Pavel. "Electronic Properties and Structure of Functionalized Graphene." PDXScholar, 2012. https://pdxscholar.library.pdx.edu/open_access_etds/585.

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The trend over the last 50 years of down-scaling the silicon transistor to achieve faster computations has led to doubling of the number of transistors and computation speed over about every two years. However, this trend cannot be maintained due to the fundamental limitations of silicon as the main material for the semiconducting industry. Therefore, there is an active search for exploration of alternate materials. Among the possible candidates that can may [sic] be able to replace silicon is graphene which has recently gained the most attention. Unique properties of graphene include exceedingly high carrier mobility, tunable band gap, huge optical density of a monolayer, anomalous quantum Hall effect, and many others. To be suitable for microelectronic applications the material should be semiconductive, i.e. have a non-zero band gap. Pristine graphene is a semimetal, but by the virtue of doping the graphene surface with different molecules and radicals a band gap can be opened. Because the electronic properties of all materials are intimately related to their atomic structure, characterization of molecular and electronic structure of functionalizing groups is of high interest. The ab-inito (from the first principles) calculations provide a unique opportunity to study the influence of the dopants and thus allow exploration of the physical phenomena in functionalized graphene structures. This ability paves the road to probe the properties based on the intuitive structural information only. A great advantage of this approach lies in the opportunity for quick screening of various atomic structures. We conducted a series of ab-inito investigations of graphene functionalized with covalently and hapticly bound groups, and demonstrated possible practical usage of functionalized graphene for microelectronic and optical applications. This investigation showed that it is possible [to] produce band gaps in graphene (i.e., produce semiconducting graphene) of about 1 eV, without degrading the carrier mobility. This was archived by considering the influence of those adducts on electronic band structure and conductivity properties.
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6

Malec, Christopher Evan. "Transport in graphene tunnel junctions." Diss., Georgia Institute of Technology, 2011. http://hdl.handle.net/1853/41140.

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It has been predicted that gold, aluminum, and copper do not fundamentally change the graphene band structure when they are in close proximity to graphene, but merely increase the doping. My data confirms this prediction, as well as explores other consequences of the metal/graphene interface. First, I present a technique to fabricate thin oxide barriers between graphene and aluminum and copper to create tunnel junctions and directly probe graphene in close proximity to a metal. I map the differential conductance of the junctions versus tunnel probe and back gate voltage, and observe mesoscopic fluctuations in the conductance that are directly related to the graphene density of states. I develop a simple theory of tunneling into graphene to extract experimental numbers, such as the doping level of the graphene, and take into account the electrostatic gating of graphene by the tunneling probe. Next, results of measurements in magnetic fields will also be discussed, including evidence for incompressible states in the Quantum Hall regime wherein an electron is forced to tunnel between a localized state and an extended state that is connected to the lead. The physics of this system is similar to that encountered in Single Electron Transistors, and some work in this area will be reviewed. Finally, another possible method of understanding the interface between a metal and graphene through transport is presented. By depositing disconnected gold islands on graphene, I am able to measure resonances in the bias dependent differential resistance, that I connect to interactions between the graphene and gold islands.
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7

Martins, Ernane de Freitas. "QM/MM simulations of electronic transport properties for DNA sensing devices based on graphene." Universidade Estadual Paulista (UNESP), 2018. http://hdl.handle.net/11449/154328.

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Conselho Nacional de Desenvolvimento Científico e Tecnológico (CNPq)
Coordenação de Aperfeiçoamento de Pessoal de Nível Superior (CAPES)
Nanotechnology is an important and very active area of research contributing to many different fields. The development of new devices applied to personalized medicine is one of its applications. When we desire to develop new devices many effort are done, including experimental and theoretical investigations. The theoretical/computational physics can enormously contribute to this area, since the simulations can reveal the working mechanism in these systems being possible to understand and propose new devices with improved performance. We present an extensive theoretical investigation of the electronic transport properties of graphene-based devices for DNA sensing. We have used a hybrid methodology which combines quantum mechanics and molecular mechanics, the so called QM/MM method, coupled to electronic transport calculations using non-equilibrium Green’s functions. First, we studied graphene in solution in order to understand the effects of polarization on the electronic and transport properties under different salt concentrations. We also stud- ied graphene with Stone-Wales defect in pure water. For these systems we tested a simple polarization model based on rigid rods. Our analysis were also done over different QM/MM partitions including explicit water molecules in the quantum part. Our results showed that the inclusion of the solvent in the electronic transport calculations for graphene decreases the total transmission, showing the important role played by the water. Our results also showed that the electronic transport properties of graphene do not suffer significant changes as we increase the salt concentration in the solution. The inclusion of polarization effects in graphene, despite changing the structuring of water molecules that make up the first solvation shell of graphene, do not significantly affect the electronic transport through graphene. We then studied DNA sequencing devices. First we focused on sequencing using a nanopore between topological line defects in graphene. Our results showed that sequencing DNA with high selectivity and sensitivity using these devices appears possible. We also address nanogap in graphene. For this we looked at the effects of water on electronic transport by using different setups for the QM/MM partition. We showed that the inclusion of water molecules in the quantum part increases the electronic transmission in several orders of magnitude, also showing the fundamental role played by water in tunneling devices. The electronic transport simulations showed that the proposed device has the potential to be used in DNA sequencing, presenting high selectivity and sensitivity. We propose an graphene-based biochip for sequence-specific detection of DNA strands. The main idea of this sort of device is to detect hybridization of single-stranded DNA, forming double-stranded DNA. We showed that the vertical DNA adsorption, either through an anchor molecule (pyrene) or using the nucleotide itself as anchor, do not present good results for detection, since the signals for the single and double strands are quite similar. For the case of horizontal DNA adsorption on graphene our results indicated that the two signals can be distinguishable, showing promising potential for sensitivity and selectivity.
Nanotecnologia é uma importante e muito ativa área de pesquisa contribuindo para muitos campos diferentes. O desenvolvimento de novos dispositivos aplicados à medicina personalizada é uma de suas aplicações. Quando desejamos desenvolver novos dispositivos muitos esforços são feitos, incluindo investigações experimentais e teóricas. A Física teórica/computacional pode contribuir enormemente com esta área, já que simulações podem revelar o mecanismo de funcionamento nesses sistemas tornando possível entender e propor novos dispositivos com desempenho melhorado. Nós apresentamos uma extensa investigação teórica das propriedades de transporte eletrônico de dispositivos baseados em grafeno para sensoriamento de DNA. Utilizamos uma metodologia híbrida que combina mecânica quântica e mecânica molecular, o chamado método QM/MM, acoplado a cálculos de transporte eletrônico utilizando funções de Green fora do equilíbrio. Primeiramente nós estudamos grafeno em solução de modo a entender os efeitos de polarização nas propriedades eletrônica e de transporte em diferentes concentrações de sal. Também estudamos grafeno com defeito Stone-Wales em água pura. Para esses sistemas, testamos um modelo de polarização simples baseado em bastões rígidos. Nossas análises também foram feitas em diferentes partições QM/MM incluindo moléculas de água explícitas na parte quântica. Nossos resultados mostraram que a inclusão do solvente nos cálculos de transporte eletrônico para o grafeno diminui a transmissão total, mostrando o papel fundamento desempenhado pelo água. Nossos resultados também mostraram que as propriedades de transporte eletrônico do grafeno não sofrem mudanças significativas na medida em que aumentamos a concentração de sal na solução. A inclusão de efeitos de polarização em grafeno, apesar de mudar a estruturação das moléculas de água que compõem a primeira camada de solvatação do grafeno, não afeta significativamente o transporte eletrônico através do grafeno. Nós, então, estudamos dispositivos para sequenciamento de DNA. Focamos primeira- mente no sequenciamento usando nanoporo entre defeitos de linha topológicos no grafeno. Nossos resultados mostraram que o sequenciamento de DNA com alta seletividade e sensitividade usando esses dispositivos se mostra possível. Nós também abordamos nanogap em grafeno. Para tal, avaliamos os efeitos da água no transporte eletrônico utilizando diferentes configurações para a partição QM/MM. Mostramos que a inclusão de moléculas de água na parte quântica aumenta a transmissão eletrônica em várias ordens de grandeza, também mostrando o papel fundamental desempenhado pela água em dispositivos de tunelamento. As simulações de transporte eletrônico mostraram que o dispositivo proposto tem o potencial de ser usado em sequenciamento de DNA, apresentando alta seletividade e sensitividade. Propusemos um biochip baseado em grafeno para detecção de sequências específicas de fitas de DNA. A ideia principal desta classe de dispositivos é detectar a hibridização da fita simples de DNA, formando a fita dupla de DNA. Mostramos que a adsorção vertical de DNA, seja utilizando uma molécula âncora (pireno) ou utilizando o próprio nucleotídio como âncora, não apresenta bons resultados para detecção, já que os sinais para as fitas simples e dupla são bem próximos. Para o caso da adsorção horizontal de DNA em grafeno nossos resultados indicaram que os dois sinais podem ser distinguíveis, mostrando potencial promissor para sensitividade e seletividade.
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8

Verastegui, Wudmir Yudy Rojas. "Electronic and transport properties of graphene nanoribbons with adsorbed transition metal impurities : spin-orbit interaction." reponame:Repositório Institucional da UFABC, 2013.

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9

Seifert, Christian. "Control of the Electrical Transport through Single Molecules and Graphene." Doctoral thesis, Humboldt-Universität zu Berlin, 2020. http://dx.doi.org/10.18452/21647.

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Der Erste dieser Arbeit befasst sich mit der STM Untersuchung einer Grenzschicht in umgebender Atmosphäre, welche sich durch die Adsorption von Graphen auf einer Glimmeroberfläche ausbildet. Durch die umgebene Luftfeuchtigkeit interkalieren Wassermoleküle in diese Grenzschicht. Durch die Variation der relativen Luftfeuchtigkeit gibt diese Wasser ab bzw. nimmt auf, und es manifestieren sich sternförmig wachsende Fraktale, in denen Graphen etwa um den Durchmesser eines Wassermoleküls an Höhe absinkt. Die STM Untersuchung, welche primär sensitiv auf die Zustandsdichte von Graphen reagiert, zeigte, dass sich anders als in den SFM Untersuchungen, zusätzliche signifikante Höhenänderungen von Graphen innerhalb der Fraktale bildeten. Dieses deutet auf eine Wasserschicht hin, welche Domänen mit signifikant unterscheidbaren Polarisationsrichtungen aufweisen, welche die Zustandsdichte von Graphen verändern kann. Dies ist aber gleichbedeutend mit der Annahme, dass sich in jener Grenzschicht mindestens zwei oder mehr lagen Wasser bilden müssen. Der zweiten Teil befasst sich mit der STM Untersuchung einer funktionalisierten Oberfläche die charakterisiert ist durch eine leitende Oberfläche (Graphen und HOPG) adsorbierten funktionalisierte Dyade an einer Fest-Flüssig Grenzfläche. Diese Dyade besteht im Wesentlichen aus einem Zink-Tetraphenylporphyrin (ZnTPP) und mit diesem über einem flexiblen Arm verbundenen Spiropyranderivat. Letztere ändert seine Konformation durch die Einstrahlung mit Licht geeigneter Wellenlänge, womit sich das Dipolmoment stark ändert. Es zeigte sich, dass das Schaltverhalten auf einen Graphen mit dem Schaltverhalten einer Dyade in Lösung vergleichbar ist. Dieses lässt den Schluss zu, dass das Schalteigenschaften einer einzelnen Dyade auf das adsorbierte Kollektiv übertragen werden kann, da es keine signifikanten beeinflussenden Wechselwirkungen durch die leitende Oberfläche und der benachbarten Dyaden auswirkte.
The first of this two-part work deals with the STM investigation of an interface in the surrounding natural atmosphere, which is formed by the adsorption of the conductive graphene onto the mica surface. In this interface, water molecules may intercalate by the surrounding humidity. By varying the relative humidity, the interface is rewetted, respectively, dewetted and it manifests itself in a star shape growing fractals, where the height of graphene is decreased by approximately the diameter of one water molecule. The STM investigation - which is primarily sensitive to the density of states of graphene - shows that additional significant changes in the height of graphene are formed within the fractal, unlike in the SFM investigations. This suggests that there is a water layer by which the density of graphene is differently affected by domains with significant distinguishable polarisation alignments. However, this is equivalent to the assumption that there are two or more water layers exist within the interface. The second part of this work deals with the STM investigation of a functionalized surface characterised by a functionalized dyad adsorbed onto a conductive surface (graphene and HOPG) at a solid-liquid interface. This dyad essentially comprises a zinc-tetraphenylporphyrin (ZnTPP) and is connected with a spiropyran derivative via a flexible linker. This changes its conformation through irradiation with light with a suitable wavelength, by which the dipole moment is also strongly changed. It was found that the switching behaviour of a graphene-based conductive surface is comparable with the switching behaviour of a dyad, which itself can move freely in solution. This leads to the conclusion that the switching properties of a single dyad can be transmitted to its collective because it affected no significant influence interactions by the conductive surface and the adjacent dyads.
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10

Khademi, Ali. "Tuning graphene’s electronic and transport properties via adatom deposition." Thesis, University of British Columbia, 2017. http://hdl.handle.net/2429/62588.

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This thesis investigates the effect of adatom deposition, especially alkali and heavy adatoms, on graphene’s electronic and transport properties. While there are many theoretical predictions for tuning graphene’s properties via adatom deposition, only a few of them have been observed. Solving this enigma of inconsistency between theory and experiment raises the need for deeper experimental investigation of this matter. To achieve this goal, an experimental set up was built which enables us to evaporate different metal adatoms on graphene samples while they are at cryogenic temperatures and ultra-high vacuum (UHV) conditions. The critical role of in situ high-temperature annealing in creating reliable interactions between adatoms and graphene is observed. This contradicts the commonly accepted assumption in the transport community that placing a graphene sample in UHV and performing in situ 400-500 K annealing is enough to provide a reliable adatom-graphene interaction. Even charge doping by alkali atoms (Li), which is arguably the simplest of all adatom effects, cannot be achieved completely without in situ 900 K annealing. This observation may explain the difficulty many groups have faced in inducing superconductivity, spin-orbit interaction, or similar electronic modifications to graphene by adatom deposition, and it points toward a straightforward, if experimentally challenging, solution. The first experimental evidence of short-range scattering due to alkali adatoms in graphene is presented in this thesis, a result that contradicts the naive expectation that alkali adatoms on graphene only cause long-range Coulomb scattering. The induced short-range scattering by Li caused decline of intervalley time and length (i.e., enhancement of intervalley scattering). No signatures of theoretically predicted superconductivity of Li doped graphene were observed down to 3 K. Cryogenic deposition of copper increased the dephasing rate of graphene. This increase in dephasing rate is either a sign of inducing spin-orbit interaction or magnetic moments by copper. No similar effect was observed for indium.
Science, Faculty of
Physics and Astronomy, Department of
Graduate
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Книги з теми "Electronic Transport Properties -Graphene"

1

1946-, Zabel H., Solin S. A. 1942-, and Doll G. L, eds. Graphite intercalation compounds II: Transport and electronic properties. Berlin: Springer-Verlag, 1992.

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Zabel, Hartmut. Graphite Intercalation Compounds II: Transport and Electronic Properties. Berlin, Heidelberg: Springer Berlin Heidelberg, 1992.

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3

Wallbank, John R. Electronic Properties of Graphene Heterostructures with Hexagonal Crystals. Cham: Springer International Publishing, 2014. http://dx.doi.org/10.1007/978-3-319-07722-2.

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4

service), SpringerLink (Online, ed. Graphene Nanoelectronics: Metrology, Synthesis, Properties and Applications. Berlin, Heidelberg: Springer Berlin Heidelberg, 2012.

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5

T, Grahn H., ed. Semiconductor superlattices: Growth and electronic properties. Singapore: World Scientific, 1995.

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6

Sabathil, Matthias. Opto-electronic and quantum transport properties of semiconductor nanostructures. Garching: Verein zur Förderung des Walter Schottky Instituts der Technischen Universität München, 2005.

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Lui, Chun Hung. Investigations of the electronic, vibrational and structural properties of single and few-layer graphene. [New York, N.Y.?]: [publisher not identified], 2011.

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8

Linjun, Wang, Song Chenchen, and SpringerLink (Online service), eds. Theory of Charge Transport in Carbon Electronic Materials. Berlin, Heidelberg: Springer Berlin Heidelberg, 2012.

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9

Madelung, O., U. Rössler, and M. Schulz, eds. Group IV Elements, IV-IV and III-V Compounds. Part b - Electronic, Transport, Optical and Other Properties. Berlin/Heidelberg: Springer-Verlag, 2002. http://dx.doi.org/10.1007/b80447.

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Graphite Intercalation Compounds II: Transport and Electronic Properties. Springer, 2011.

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Частини книг з теми "Electronic Transport Properties -Graphene"

1

Ziegler, Klaus, Antonio Hill, and Andreas Sinner. "Electronic Transport and Optical Properties of Graphene." In Graphene Optoelectronics, 1–16. Weinheim, Germany: Wiley-VCH Verlag GmbH & Co. KGaA, 2014. http://dx.doi.org/10.1002/9783527677788.ch1.

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Ziegler, Klaus. "Electronic Transport and Optical Properties of Graphene." In Graphene Science Handbook, 533–42. Boca Raton, FL : CRC Press, Taylor & Francis Group, 2016. | “2016: CRC Press, 2016. http://dx.doi.org/10.1201/b19642-32.

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3

Van Tuan, Dinh. "Electronic and Transport Properties of Graphene." In Charge and Spin Transport in Disordered Graphene-Based Materials, 5–34. Cham: Springer International Publishing, 2015. http://dx.doi.org/10.1007/978-3-319-25571-2_2.

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4

Sancho-García, J. C., and A. J. Pérez-Jiménez. "Electronic Properties and Transport in Finite-Size Two-Dimensional Carbons." In Graphene Science Handbook, 91–103. Boca Raton, FL : CRC Press, Taylor & Francis Group, 2016. | “2016: CRC Press, 2016. http://dx.doi.org/10.1201/b19642-7.

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5

Tien, Nguyen Thanh, Pham Thi Bich Thao, and Ming-Fa Lin. "Electronic and Transport Properties of the Sawtooth-Sawtooth Penta-Graphene Nanoribbons." In Diverse Quasiparticle Properties of Emerging Materials, 67–95. Boca Raton: CRC Press, 2022. http://dx.doi.org/10.1201/9781003322573-4.

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6

Spain, Ian L. "Electronic Transport Properties of Graphite, Carbons, and Related Materials." In Chemistry and Physics of Carbon, 119–304. Boca Raton: CRC Press, 2021. http://dx.doi.org/10.1201/9781003209065-2.

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7

Mazher, Javed, Asefa A. Desta, and Shabina Khan. "PAn-Graphene-Nanoribbon Composite Materials for Organic Photovoltaics: A DFT Study of Their Electronic and Charge Transport Properties." In Solar Cell Nanotechnology, 357–407. Hoboken, NJ, USA: John Wiley & Sons, Inc., 2013. http://dx.doi.org/10.1002/9781118845721.ch14.

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8

Zhu, Jun. "Electronic Transport in Graphene." In Graphene Nanoelectronics, 17–49. Boston, MA: Springer US, 2012. http://dx.doi.org/10.1007/978-1-4614-0548-1_2.

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9

Korol, A. M., N. V. Medvid, and S. I. Litvynchuk. "Transport Properties of the Dirac-Weyl Electrons Through the Graphene-Based Superlattice Modulated by the Fermi Velocity Barriers." In Springer Proceedings in Physics, 215–21. Cham: Springer International Publishing, 2015. http://dx.doi.org/10.1007/978-3-319-18543-9_13.

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10

Girão, Eduardo Costa, Liangbo Liang, Jonathan Owens, Eduardo Cruz-Silva, Bobby G. Sumpter, and Vincent Meunier. "Electronic Transport in Graphitic Carbon Nanoribbons." In Graphene Chemistry, 319–46. Chichester, UK: John Wiley & Sons, Ltd, 2013. http://dx.doi.org/10.1002/9781118691281.ch14.

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Тези доповідей конференцій з теми "Electronic Transport Properties -Graphene"

1

Zhufeng Hou and Marcus Yee. "Electronic and transport properties of graphene nanoribbons." In 7th IEEE International Conference on Nanotechnology. IEEE, 2007. http://dx.doi.org/10.1109/nano.2007.4601252.

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Wakabayashi, K. "Electronic Transport Properties in Graphene Nanoribbons and Junctions." In 2010 International Conference on Solid State Devices and Materials. The Japan Society of Applied Physics, 2010. http://dx.doi.org/10.7567/ssdm.2010.f-1-2.

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Das, Poulomi, Sk Ibrahim, Koushik Chakraborty, Surajit Ghosh, and Tanusri Pal. "Opto-electronic transport properties of graphene oxide based devices." In NANOFORUM 2014. AIP Publishing LLC, 2015. http://dx.doi.org/10.1063/1.4918104.

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4

Seol, Jae Hun, Arden L. Moore, Insun Jo, Zhen Yao, and Li Shi. "Thermal Conductivity Measurement of Graphene Exfoliated on Silicon Dioxide." In 2010 14th International Heat Transfer Conference. ASMEDC, 2010. http://dx.doi.org/10.1115/ihtc14-23295.

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Since graphene was first exfoliated from graphite, the monatomic layer of carbon atoms has attracted great interest for fundamental studies of unique two dimensional transport phenomena. Meanwhile, graphene is being explored for nanoelectronic applications because of the superior electron mobility and mechanical strength as well as compatibility with existing planar silicon-based microelectronics. The ultrahigh thermal conductivity suggested recently for suspended graphene is another attractive feature that may potentially address the increasingly severe heat dissipation problems in nanoelectronic devices. However, little is known about thermal transport properties of supported graphene that is used in most graphene device configurations. To better understand thermal transport in supported graphene, we have developed a device to measure the thermal conductivity of graphene exfoliated on a silicon dioxide beam. The obtained peak thermal conductivity is about 600 W/m-K near room temperature. This value is lower than the basal plane values for graphite and suspended graphene, but still considerably higher than common electronic materials. The measurement results at low temperatures further reveal intriguing low dimensional behaviors. Here, we present a detailed analytical and numerical heat transfer analysis of the thermal measurement method.
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Chauhan, Satyendra Singh, Pankaj Srivastava, and A. K. Shrivastva. "Electronic and transport properties edge functionalized graphene nanoribbons-An ab initio approach." In SOLID STATE PHYSICS: Proceedings of the 58th DAE Solid State Physics Symposium 2013. AIP Publishing LLC, 2014. http://dx.doi.org/10.1063/1.4872648.

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6

Wakabayashi, Katsunori, Yositake Takane, Manfred Sigrist, Marília Caldas, and Nelson Studart. "Electronic transport properties and perfectly conducting channel of the disordered graphene nanoribbons." In PHYSICS OF SEMICONDUCTORS: 29th International Conference on the Physics of Semiconductors. AIP, 2010. http://dx.doi.org/10.1063/1.3295545.

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7

Gumbs, Godfrey, Andrii Iurov, Danhong Huang, Paula Fekete, and Liubov Zhemchuzhna. "Effects of periodic scattering potential on Landau quantization and ballistic transport of electrons in graphene." In ELECTRONIC, PHOTONIC, PLASMONIC, PHONONIC AND MAGNETIC PROPERTIES OF NANOMATERIALS. AIP Publishing LLC, 2014. http://dx.doi.org/10.1063/1.4870209.

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8

García-Suárez, Víctor M., and Pablo Álvarez-Rodríguez. "Effect of edge passivation on the electronic and transport properties of graphene nanogaps." In LOW-DIMENSIONAL MATERIALS: THEORY, MODELING, EXPERIMENT, DUBNA 2021. AIP Publishing, 2022. http://dx.doi.org/10.1063/5.0098903.

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9

Milowska, Karolina Z., Magdalena Birowska, and Jacek A. Majewski. "Mechanical, electronic, and transport properties of functionalized graphene monolayers from ab initio studies." In THE PHYSICS OF SEMICONDUCTORS: Proceedings of the 31st International Conference on the Physics of Semiconductors (ICPS) 2012. AIP, 2013. http://dx.doi.org/10.1063/1.4848316.

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10

Vallabhaneni, Ajit K., James Loy, Dhruv Singh, Xiulin Ruan, and Jayathi Murthy. "A Study of Spatially-Resolved Non-Equilibrium in Laser-Irradiated Graphene Using Boltzmann Transport Equation." In ASME 2013 International Mechanical Engineering Congress and Exposition. American Society of Mechanical Engineers, 2013. http://dx.doi.org/10.1115/imece2013-66095.

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Raman spectroscopy is typically used to characterize graphene in experiments and also to measure properties like thermal conductivity and optical phonon lifetime. The laser-irradiation processes underlying this measurement technique include coupling between photons, electrons and phonons. Recent experimental studies have shown that e-ph scattering limits the performance of graphene-based electronic devices due to the difference in their timescales of relaxation resulting in various bottleneck effects. Furthermore, recently published thermal conductivity measurements on graphene are sensitive to the laser spot size which strengthens the possibility of non-equilibrium between various phonon groups. These studies point to the need to study the spatially-resolved non-equilibrium between various energy carriers in graphene. In this work, we demonstrate non-equilibrium in the e-ph interactions in graphene by solving the linearized electron and phonon Boltzmann transport equations (BTE) iteratively under steady state conditions. We start by assuming that all the electrons equilibrate rapidly to an elevated temperature under laser-irradiation and they gradually relax by phonon emission and reach a steady state. The electron and phonon BTEs are coupled because the e-ph scattering rate depends on the phonon population while the rate of phonon generation depends on the e-ph scattering rate. We used density-functional theory/density-functional perturbation theory (DFT/DFPT) to calculate the electronic eigen states, phonon frequencies and the e-ph coupling matrix elements. We calculated the rate of energy loss from the hot electrons in terms of the phonon generation rate (PGR) which serve as an input for solving the BTE. Likewise, ph-ph relaxation times are calculated from the anharmonic lattice dynamics (LD)/FGR. Through our work, we obtained the spatially resolved temperature profiles of all the relevant energy carriers throughout the entire domain; these are impossible to obtain through experiments.
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Звіти організацій з теми "Electronic Transport Properties -Graphene"

1

Plachinda, Pavel. Electronic Properties and Structure of Functionalized Graphene. Portland State University Library, January 2000. http://dx.doi.org/10.15760/etd.585.

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LeRoy, Brian. Understanding and Controlling the Electronic Properties of Graphene Using Scanning Probe Microscopy. Fort Belvoir, VA: Defense Technical Information Center, July 2014. http://dx.doi.org/10.21236/ada612223.

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Kabir, Firoza, Xiaxin Ding, M. MOfazzel Hosen, Narayan Poudel, Gyanendra Dhakal, Arjun Pathak, Madhab Neupane, and Krzysztof Gofryk. Electronic and transport properties of topological material GdxSb2-xTe3. Office of Scientific and Technical Information (OSTI), July 2019. http://dx.doi.org/10.2172/1546705.

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Lewis, Greyson R., William E. Bunting, Rajendra R. Zope, Brett I. Dunlap, and James C. Ellenbogen. Smooth Scaling of Valence Electronic Properties in Fullerenes: From One Carbon Atom, to C60, to Graphene. Fort Belvoir, VA: Defense Technical Information Center, September 2012. http://dx.doi.org/10.21236/ada586485.

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Abdelsalam, A., Zagitova A. A., Bozhko S. I., Kulakov V. I., and Zverev V. N. Two-dimensional system - black phosphorus: electronic, atomic structure and transport properties of bP(100) single crystals. MTPR Journal, September 2019. http://dx.doi.org/10.19138/mtpr/(19)50-57.

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