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Статті в журналах з теми "Electronic semiconductor"
Choi, Junhwan, and Hocheon Yoo. "Combination of Polymer Gate Dielectric and Two-Dimensional Semiconductor for Emerging Field-Effect Transistors." Polymers 15, no. 6 (March 10, 2023): 1395. http://dx.doi.org/10.3390/polym15061395.
Повний текст джерелаAlivisatos, A. Paul. "Semiconductor Nanocrystals." MRS Bulletin 20, no. 8 (August 1995): 23–32. http://dx.doi.org/10.1557/s0883769400045073.
Повний текст джерелаChi, Zeyu, Jacob J. Asher, Michael R. Jennings, Ekaterine Chikoidze, and Amador Pérez-Tomás. "Ga2O3 and Related Ultra-Wide Bandgap Power Semiconductor Oxides: New Energy Electronics Solutions for CO2 Emission Mitigation." Materials 15, no. 3 (February 2, 2022): 1164. http://dx.doi.org/10.3390/ma15031164.
Повний текст джерелаValentine, Nathan, Diganta Das, Bhanu Sood, and Michael Pecht. "Failure Analyses of Modern Power Semiconductor Switching Devices." International Symposium on Microelectronics 2015, no. 1 (October 1, 2015): 000690–95. http://dx.doi.org/10.4071/isom-2015-tha56.
Повний текст джерелаSAPRA, SAMEER, RANJANI VISWANATHA, and D. D. SARMA. "ELECTRONIC STRUCTURE OF SEMICONDUCTOR NANOCRYSTALS: AN ACCURATE TIGHT-BINDING DESCRIPTION." International Journal of Nanoscience 04, no. 05n06 (October 2005): 893–99. http://dx.doi.org/10.1142/s0219581x05003851.
Повний текст джерелаNakayama, Yasuo, Ryohei Tsuruta, and Tomoyuki Koganezawa. "‘Molecular Beam Epitaxy’ on Organic Semiconductor Single Crystals: Characterization of Well-Defined Molecular Interfaces by Synchrotron Radiation X-ray Diffraction Techniques." Materials 15, no. 20 (October 13, 2022): 7119. http://dx.doi.org/10.3390/ma15207119.
Повний текст джерелаKlimm, Detlef. "Electronic materials with a wide band gap: recent developments." IUCrJ 1, no. 5 (August 29, 2014): 281–90. http://dx.doi.org/10.1107/s2052252514017229.
Повний текст джерелаNgai, J. H., K. Ahmadi-Majlan, J. Moghadam, M. Chrysler, D. P. Kumah, C. H. Ahn, F. J. Walker, et al. "Electrically Coupling Multifunctional Oxides to Semiconductors: A Route to Novel Material Functionalities." MRS Advances 1, no. 4 (2016): 255–63. http://dx.doi.org/10.1557/adv.2016.101.
Повний текст джерелаBrillson, Leonard, Jonathan Cox, Hantian Gao, Geoffrey Foster, William Ruane, Alexander Jarjour, Martin Allen, David Look, Holger von Wenckstern, and Marius Grundmann. "Native Point Defect Measurement and Manipulation in ZnO Nanostructures." Materials 12, no. 14 (July 12, 2019): 2242. http://dx.doi.org/10.3390/ma12142242.
Повний текст джерелаSu, Xiao-Qian, and Xue-Feng Wang. "Electronic and Spintronic Properties of Armchair MoSi2N4 Nanoribbons Doped by 3D Transition Metals." Nanomaterials 13, no. 4 (February 9, 2023): 676. http://dx.doi.org/10.3390/nano13040676.
Повний текст джерелаДисертації з теми "Electronic semiconductor"
Newson, D. J. "Electronic transport in III-V semiconductors and semiconductor devices." Thesis, University of Cambridge, 1986. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.382242.
Повний текст джерелаTallarida, Massimo. "Electronic properties of semiconductor surfaces and metal, semiconductor interfaces." [S.l.] : [s.n.], 2005. http://www.diss.fu-berlin.de/2005/196/index.html.
Повний текст джерелаWharam, David Andrew. "Electronic transport in semiconductor microstructures." Thesis, University of Cambridge, 1989. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.315922.
Повний текст джерелаKelly, Leah L. "Electronic Structure and Dynamics at Organic Semiconductor / Inorganic Semiconductor Interfaces." Diss., The University of Arizona, 2015. http://hdl.handle.net/10150/566997.
Повний текст джерелаRichards, David Robert. "The electronic structure and optical properties of GaAs two-dimensional electron systems." Thesis, University of Cambridge, 1990. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.359697.
Повний текст джерелаOliveira, Miguel Afonso Magano Hipolito De Jesus. "Electronic properties of layered semiconductor structures." Thesis, Imperial College London, 2004. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.406392.
Повний текст джерелаCharlesworth, Jason. "Electronic structure of metal-semiconductor interfaces." Thesis, University of Cambridge, 1991. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.239738.
Повний текст джерелаPeleckis, Germanas. "Studies on diluted oxide magnetic semiconductors for spin electronic applications." Access electronically, 2006. http://www.library.uow.edu.au/adt-NWU/public/adt-NWU20070821.145447/index.html.
Повний текст джерелаBrocke, Thomas. "Electronic Raman spectroscopy on semiconductor quantum dots." Göttingen Cuvillier, 2007.
Знайти повний текст джерелаMarsh, A. C. "The electronic properties of semiconductor heterojunction systems." Thesis, University of Cambridge, 1985. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.372890.
Повний текст джерелаКниги з теми "Electronic semiconductor"
Semiconductor and electronic devices. 3rd ed. New York: Prentice-Hall, 1993.
Знайти повний текст джерелаL, Grung B., ed. Semiconductor-device electronics. Philadelphia: Holt, Rinehart and Winston, 1991.
Знайти повний текст джерелаL, Grung B., ed. Semiconductor-device electronics. Philadelphia: Holt, Rinehart, and Winston, 1991.
Знайти повний текст джерелаSemiconductor power electronics. New York: Van Nostrand Reinhold, 1986.
Знайти повний текст джерела1946-, Margaritondo Giorgio, ed. Electronic structure of semiconductor heterojunctions. Milano [Italy]: Jaca Book, 1988.
Знайти повний текст джерелаMargaritondo, Giorgio, ed. Electronic Structure of Semiconductor Heterojunctions. Dordrecht: Springer Netherlands, 1988. http://dx.doi.org/10.1007/978-94-009-3073-5.
Повний текст джерелаMönch, Winfried. Electronic Properties of Semiconductor Interfaces. Berlin, Heidelberg: Springer Berlin Heidelberg, 2004. http://dx.doi.org/10.1007/978-3-662-06945-5.
Повний текст джерелаBorris, John P. Semiconductor devices using Electronic Workbench. Englewood Cliffs, N.J: Prentice Hall, 1996.
Знайти повний текст джерелаSemiconductor devices for electronic tuners. New York: Gordon and Breach, 1991.
Знайти повний текст джерелаWinfried, Mönch, ed. Electronic structure of metal-semiconductor contacts. Dordrecht: Kluwer Academic, 1990.
Знайти повний текст джерелаЧастини книг з теми "Electronic semiconductor"
Tietze, Ulrich, Christoph Schenk, and Eberhard Gamm. "Semiconductor Memories." In Electronic Circuits, 689–721. Berlin, Heidelberg: Springer Berlin Heidelberg, 2008. http://dx.doi.org/10.1007/978-3-540-78655-9_10.
Повний текст джерелаvan de Roer, Theo G. "Semiconductor materials." In Microwave Electronic Devices, 61–94. Boston, MA: Springer US, 1994. http://dx.doi.org/10.1007/978-1-4615-2500-4_3.
Повний текст джерелаLutz, Josef, Heinrich Schlangenotto, Uwe Scheuermann, and Rik De Doncker. "Power Electronic Systems." In Semiconductor Power Devices, 497–513. Berlin, Heidelberg: Springer Berlin Heidelberg, 2010. http://dx.doi.org/10.1007/978-3-642-11125-9_14.
Повний текст джерелаGift, Stephan J. G., and Brent Maundy. "Semiconductor Diode." In Electronic Circuit Design and Application, 1–40. Cham: Springer International Publishing, 2020. http://dx.doi.org/10.1007/978-3-030-46989-4_1.
Повний текст джерелаGift, Stephan J. G., and Brent Maundy. "Semiconductor Diode." In Electronic Circuit Design and Application, 1–44. Cham: Springer International Publishing, 2021. http://dx.doi.org/10.1007/978-3-030-79375-3_1.
Повний текст джерелаSiu, Christopher. "Semiconductor Physics." In Electronic Devices, Circuits, and Applications, 35–39. Cham: Springer International Publishing, 2022. http://dx.doi.org/10.1007/978-3-030-80538-8_3.
Повний текст джерелаPatrick, Dale R., Stephen W. Fardo, Ray E. Richardson, and Vigyan (Vigs) Chandra. "Semiconductor Fundamentals." In Electronic Devices and Circuit Fundamentals, 1–37. New York: River Publishers, 2023. http://dx.doi.org/10.1201/9781003393139-1.
Повний текст джерелаTaudt, Christopher. "Introduction and Motivation." In Development and Characterization of a Dispersion-Encoded Method for Low-Coherence Interferometry, 1–3. Wiesbaden: Springer Fachmedien Wiesbaden, 2021. http://dx.doi.org/10.1007/978-3-658-35926-3_1.
Повний текст джерелаBausière, Robert, Francis Labrique, and Guy Séguier. "Switching Power Semiconductor Devices." In Power Electronic Converters, 17–109. Berlin, Heidelberg: Springer Berlin Heidelberg, 1993. http://dx.doi.org/10.1007/978-3-642-52454-7_2.
Повний текст джерелаPowell, Richard F. "Semiconductor Diodes." In Testing Active and Passive Electronic Components, 83–101. Boca Raton: Routledge, 2022. http://dx.doi.org/10.1201/9780203737255-7.
Повний текст джерелаТези доповідей конференцій з теми "Electronic semiconductor"
Dekorsy, T., A. M. T. Kim, H. Kurz, and K. Köhler. "Coupled Bloch-Phonon Oscillations in Superlattices." In International Conference on Ultrafast Phenomena. Washington, D.C.: Optica Publishing Group, 1996. http://dx.doi.org/10.1364/up.1996.wc.1.
Повний текст джерелаOleg, Martynov, Ogurtsov Alexander, and Sashov Alexander. "Semiconductor electronic parts testing efficiency." In 2013 11th East-West Design and Test Symposium (EWDTS). IEEE, 2013. http://dx.doi.org/10.1109/ewdts.2013.6673118.
Повний текст джерелаCollins, R. T., L. Vina, W. I. Wang, C. Mailhiot, and D. L. Smith. "Electronic Properties Of Quantum Wells In Perturbing Fields." In Semiconductor Conferences, edited by Gottfried H. Doehler and Joel N. Schulman. SPIE, 1987. http://dx.doi.org/10.1117/12.940814.
Повний текст джерелаKalluri, Srinath, Antao Chen, Mehrdad Ziari, William H. Steier, Zhiyong Liang, Larry R. Dalton, Datong Chen, Bahram Jalali, and Harold R. Fetterman. "Vertical Integration of Polymer Electro-Optic Devices on Electronic Circuits." In Organic Thin Films for Photonic Applications. Washington, D.C.: Optica Publishing Group, 1995. http://dx.doi.org/10.1364/otfa.1995.wb.6.
Повний текст джерелаZany, D. V., Y. O. Shi, F. F. So, S. R. Forrest, and W. H. Steier. "Crystalline organic semiconductor thin-film optical waveguides." In OSA Annual Meeting. Washington, D.C.: Optica Publishing Group, 1990. http://dx.doi.org/10.1364/oam.1990.fd1.
Повний текст джерелаOnet, Raul, Marius Neag, Albert Fazakas, Paul Miresan, Gabriel Petrasuc, Iulian Sularea, Alessandro Battigelli, and Martin Hill. "A Home Electronic Laboratory for Each Student - A Potential Paradigm Shift in Teaching Electronics." In 2022 International Semiconductor Conference (CAS). IEEE, 2022. http://dx.doi.org/10.1109/cas56377.2022.9934592.
Повний текст джерелаGaylord, T. K., E. N. Glytsis, and K. F. Brennan. "Guided electron waves in semiconductor quantum wells." In OSA Annual Meeting. Washington, D.C.: Optica Publishing Group, 1989. http://dx.doi.org/10.1364/oam.1989.mb5.
Повний текст джерелаBellucci, S. "Electronic transport properties in carbon nanotubes." In 2008 International Semiconductor Conference. IEEE, 2008. http://dx.doi.org/10.1109/smicnd.2008.4703318.
Повний текст джерелаShimizu, Akira. "Quantum Non-Demolition Measurement of Photon Number using a Mesoscopic Electron Interferometer." In Quantum Optoelectronics. Washington, D.C.: Optica Publishing Group, 1993. http://dx.doi.org/10.1364/qo.1993.qwc.3.
Повний текст джерелаGrahn, H. T., H. J. Maris, J. Tauc, Z. Vardeny, and B. Abeles. "Ultrafast Electronic And Vibrational Effects In Amorphous Multilayers." In 1988 Semiconductor Symposium, edited by Robert R. Alfano. SPIE, 1988. http://dx.doi.org/10.1117/12.947211.
Повний текст джерелаЗвіти організацій з теми "Electronic semiconductor"
Sarma, Sankar D. Ultrafast Electronic Processes in Semiconductor Nanostructures. Fort Belvoir, VA: Defense Technical Information Center, February 2000. http://dx.doi.org/10.21236/ada384374.
Повний текст джерелаKastner, Marc A. Measurement of Single Electronic Charging of Semiconductor Nano-Crystals. Office of Scientific and Technical Information (OSTI), October 2014. http://dx.doi.org/10.2172/1229880.
Повний текст джерелаGoldman, Rachel S., and H. T. Johnson. Determining the Origins of Electronic States in Semiconductor Nanostructures. Office of Scientific and Technical Information (OSTI), December 2014. http://dx.doi.org/10.2172/1165419.
Повний текст джерелаMerlin, R. Studies of Phonons and Electronic Excitations in Semiconductor Heterostructures. Fort Belvoir, VA: Defense Technical Information Center, March 1992. http://dx.doi.org/10.21236/ada249406.
Повний текст джерелаDongarra, Jack, and Stanimire Tomov. Predicting the Electronic Properties of 3D, Million-atom Semiconductor nanostructure Architectures. Office of Scientific and Technical Information (OSTI), March 2012. http://dx.doi.org/10.2172/1036499.
Повний текст джерелаHall, Douglas C., Patrick J. Fay, Thomas H. Kosel, Bruce A. Bunker, and Russell D. Dupuis. Electronic Properties and Device Applications of III-V Compound Semiconductor Native Oxides. Fort Belvoir, VA: Defense Technical Information Center, March 2006. http://dx.doi.org/10.21236/ada449186.
Повний текст джерелаRudin, Sergey, Gregory Garrett, and Vladimir Malinovsky. Coherent Optical Control of Electronic Excitations in Wide-Band-Gap Semiconductor Structures. Fort Belvoir, VA: Defense Technical Information Center, May 2015. http://dx.doi.org/10.21236/ada620146.
Повний текст джерелаBandyopadhyay, Supriyo, Hadis Morkoc, Alison Baski, and Shiv Khanna. Self Assembled Semiconductor Quantum Dots for Spin Based All Optical and Electronic Quantum Computing. Fort Belvoir, VA: Defense Technical Information Center, April 2008. http://dx.doi.org/10.21236/ada483818.
Повний текст джерелаTully, John C. The Role of Electronic Excitations on Chemical Reaction Dynamics at Metal, Semiconductor and Nanoparticle Surfaces. Office of Scientific and Technical Information (OSTI), June 2017. http://dx.doi.org/10.2172/1362289.
Повний текст джерелаHamad, Kimberly Sue. X-ray and photoelectron spectroscopy of the structure, reactivity, and electronic structure of semiconductor nanocrystals. Office of Scientific and Technical Information (OSTI), January 2000. http://dx.doi.org/10.2172/776734.
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