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Статті в журналах з теми "Disorder, Doping"
Santos, Ricardo D. S., and Marcos V. dos S. Rezende. "Doping disorder and the reduction–doping process in LiSrPO4." Phys. Chem. Chem. Phys. 19, no. 40 (2017): 27731–38. http://dx.doi.org/10.1039/c7cp04566b.
Повний текст джерелаJones, Carwyn. "Doping as addiction: disorder and moral responsibility." Journal of the Philosophy of Sport 42, no. 2 (January 6, 2015): 251–67. http://dx.doi.org/10.1080/00948705.2014.997743.
Повний текст джерелаKabbaj, M., J. P. Albert, and C. Jouanin. "Effects of Doping Induced Disorder in Polyacetylene." Molecular Crystals and Liquid Crystals 117, no. 1 (February 1985): 205–8. http://dx.doi.org/10.1080/00268948508074625.
Повний текст джерелаFediai, Artem, Anne Emering, Franz Symalla, and Wolfgang Wenzel. "Disorder-driven doping activation in organic semiconductors." Physical Chemistry Chemical Physics 22, no. 18 (2020): 10256–64. http://dx.doi.org/10.1039/d0cp01333a.
Повний текст джерелаTurkel, Simon, Joshua Swann, Ziyan Zhu, Maine Christos, K. Watanabe, T. Taniguchi, Subir Sachdev, et al. "Orderly disorder in magic-angle twisted trilayer graphene." Science 376, no. 6589 (April 8, 2022): 193–99. http://dx.doi.org/10.1126/science.abk1895.
Повний текст джерелаZhang, Kai, Ren-Shu Wang, and Xiao-Jia Chen. "Order–disorder transition in p-oligophenyls." Physical Chemistry Chemical Physics 21, no. 25 (2019): 13590–99. http://dx.doi.org/10.1039/c9cp01924c.
Повний текст джерелаQueisser, Hans J. "Order and Disorder in Semiconductors." MRS Bulletin 20, no. 12 (December 1995): 43–49. http://dx.doi.org/10.1557/s0883769400045899.
Повний текст джерелаHarigaya, Kikuo, Yasushi Wada, and Klaus Fesser. "Doping disorder and level structures in conjugated polymers." Synthetic Metals 43, no. 1-2 (June 1991): 3579–82. http://dx.doi.org/10.1016/0379-6779(91)91356-f.
Повний текст джерелаTanaka, Hisaaki, Kaito Kanahashi, Naoya Takekoshi, Hiroaki Mada, Hiroshi Ito, Yukihiro Shimoi, Hiromichi Ohta, and Taishi Takenobu. "Thermoelectric properties of a semicrystalline polymer doped beyond the insulator-to-metal transition by electrolyte gating." Science Advances 6, no. 7 (February 2020): eaay8065. http://dx.doi.org/10.1126/sciadv.aay8065.
Повний текст джерелаMarinov, Georgi, Biliana Georgieva, Marina Vasileva, and Tsvetanka Babeva. "Study of Structure, Morphology and Optical Properties of Cobalt-Doped and Co/Al-co-Doped ZnO Thin Films Deposited by Electrospray Method." Applied Sciences 13, no. 17 (August 25, 2023): 9611. http://dx.doi.org/10.3390/app13179611.
Повний текст джерелаДисертації з теми "Disorder, Doping"
Higgins, Joshua Scott. "Disorder and doping in the oxygenated electron-doped superconductor Pr₂₋[x]Ce[x]CuO₄±[4-delta]." College Park, Md. : University of Maryland, 2006. http://hdl.handle.net/1903/4064.
Повний текст джерелаThesis research directed by: Physics. Title from t.p. of PDF. Includes bibliographical references. Published by UMI Dissertation Services, Ann Arbor, Mich. Also available in paper.
CONFALONIERI, GIORGIA. "LOCAL DISORDER IN THE STRUCTURE OF BA(TI,CE)O3 PEROVSKITE BY MEANS OF POWDER DIFFRACTION AND TOTAL SCATTERING. EFFECT OF TEMPERATURE, DOPING CONCENTRATION AND GRAIN SIZE." Doctoral thesis, Università degli Studi di Milano, 2017. http://hdl.handle.net/2434/478906.
Повний текст джерелаOliveira, Erlania Lima de. "Propriedades ?pticas de nanocristais de SiGe: efeitos de dopagem e desordem." Universidade Federal do Rio Grande do Norte, 2008. http://repositorio.ufrn.br:8080/jspui/handle/123456789/16555.
Повний текст джерелаConselho Nacional de Desenvolvimento Cient?fico e Tecnol?gico
We have used ab initio calculations to investigate the electronic structure of SiGe based nanocrystals (NC s). This work is divided in three parts. In the first one, we focus the excitonic properties of Si(core)/Ge(shell) and Ge(core)/Si(shell) nanocrystals. We also estimate the changes induced by the effect of strain the electronic structure. We show that Ge/Si (Si/Ge) NC s exhibits type II confinement in the conduction (valence) band. The estimated potential barriers for electrons and holes are 0.16 eV (0.34 eV) and 0.64 eV (0.62 eV) for Si/Ge (Ge/Si) NC s. In contradiction to the expected long recombination lifetimes in type II systems, we found that the recombination lifetime of Ge/Si NC s (τR = 13.39μs) is more than one order of magnitude faster than in Si/Ge NC s (τR = 191.84μs). In the second part, we investigate alloyed Si1−xGex NC s in which Ge atoms are randomly positioned. We show that the optical gaps and electron-hole binding energies decrease linearly with x, while the exciton exchange energy increases with x due to the increase of the spatial extent of the electron and hole wave functions. This also increases the electron-hole wave functions overlap, leading to recombination lifetimes that are very sensitive to the Ge content. Finally, we investigate the radiative transitions in Pand B-doped Si nanocrystals. Our NC sizes range between 1.4 and 1.8 nm of diameters. Using a three-levels model, we show that the radiative lifetimes and oscillator strengths of the transitions between the conduction and the impurity bands, as well as the transitions between the impurity and the valence bands are strongly affected by the impurity position. On the other hand, the direct conduction-to-valence band decay is practically unchanged due to the presence of the impurity
Neste trabalho, utilizamos c?lculos ab-initios para investigar a estrutura eletr?nica de nanocristais (NC s) baseado em SiGe. Para tal, dividimos o mesmo em tr?s partes. Na primeira parte, investigamos as propriedades excit?nicas dos NC s de SiGe ordenados em estruturas do tipo core-shell ( Si[core]/Ge[shell ] e Ge[core]/Si[shell ]). Tamb?m estimamos as modifica??es induzidas pelo efeito do strain na estrutura eletr?nica. Com isso, mostramos que NC s Ge/Si (Si/Ge) exibe confinamento tipo II na banda de condu??o (val?ncia). A barreira de potencial estimada para os el?trons e os buracos s?o 0,16 eV (0,34 eV) e 0,64 eV (0,62 eV) para NC s de Si/Ge (Ge/Si). Em contradi??o com o esperado longo tempo de vida da recombina??o em sistemas do tipo II, verificamos que o tempo de vida da recombina??o nos NC s Ge/Si (τR = 13.39μs) ? mais de uma ordem de grandeza mais r?pido do que nos NC s de Si/Ge (τR = 191.84μs). Na segunda parte, investigamos NC s de Si1−xGex em que ?tomos de Ge s?o aleatoriamente posicionados. Desta forma, verificamos que o gap ?ptico e a energia de liga??o do par el?tron-buraco diminue linearmente com x, enquanto a energia de troca do exciton aumenta com x, devido o aumento da extens?o espacial da fun??o de onda dos el?trons e dos buracos. Isso tamb?m aumenta a superposi??o da fun??o de onda el?tron-buraco, fazendo com que o tempo de vida da recombina??o seja muito sens?vel ? fra??o molar x Ge. Finalmente, investigamos as transi??es radiativas nos NC?s de Si dopados com e Boro (B) e F?sforo (P). O tamanho dos nossos NC s variam entre 1.4 nm e 1.8 nm. Usando um modelo de tr?s n?veis, mostramos que o tempo de vida radiativo e a for?ca de oscilador entre a transi??o da banda de condu??o e o n?vel da impureza, como tamb?m a transi??o entre o n?vel da impureza e a banda de val?ncia s?o afetados pela posi??o da impureza no nanocristal de Si. Por outro lado, o decaimento direto da banda de condu??o para a de val?ncia n?o muda com presen?a da impureza
Meakin, Sebastian, and Dennis Carlsson. "När gymkultur blir problematisk : En kvalitativ studie om ohälsosamt träningsbeteende." Thesis, Linnéuniversitetet, Institutionen för socialt arbete (SA), 2014. http://urn.kb.se/resolve?urn=urn:nbn:se:lnu:diva-31672.
Повний текст джерелаRuess, Frank Joachim Physics Faculty of Science UNSW. "Atomically controlled device fabrication using STM." Awarded by:University of New South Wales. Physics, 2006. http://handle.unsw.edu.au/1959.4/24855.
Повний текст джерелаAtmani, Hassane. "Investigations dans le domaine des comportements thermiques de matériaux désordonnés : application au sélénium et aux mélanges Se-Bi à faible concentration en bismuth." Rouen, 1988. http://www.theses.fr/1988ROUES009.
Повний текст джерелаКниги з теми "Disorder, Doping"
1919-, Finlayson D. M., ed. Localisation and interaction in disordered metals and doped semiconductors: Proceedings of the Thirty-First Scottish Universities' Summer School in Physics, St. Andrews, August 1986 : a NATO Advanced Study Institute. Edinburgh: The School, 1986.
Знайти повний текст джерелаCalifano, Joseph A. Winning at any cost: Doping in Olympic sports. 2nd ed. New York, NY: CASA Commission (National Center on Addiction and Substance Abuse), 2000.
Знайти повний текст джерела1944-, Mottram D. R., ed. Drugs in sport. 4th ed. London: Routledge, 2005.
Знайти повний текст джерела1971-, Dimeo Paul, ed. Drugs, alcohol and sport. London: Routledge, 2006.
Знайти повний текст джерелаDrugs in sport. 5th ed. Abingdon, Oxon: Routledge, 2011.
Знайти повний текст джерелаRichard, Peters, ed. Patterns and correlates of anabolic-androgenic steroid use. [Sydney]: National Drug and Alcohol Research Centre, University of New South Wales, 1997.
Знайти повний текст джерелаUnited States. Dept. of Health and Human Services. Office of Inspector General. Office of Evaluation and Inspections., ed. Adolescents and steroids: A user perspective. Washington: U.S. Dept. of Health and Human Services, Office of Inspector General, Office of Evaluation and Inspections, 1990.
Знайти повний текст джерелаMottram, D. Drugs in Sport. London: Taylor & Francis Group Plc, 2004.
Знайти повний текст джерелаMottram, D. Drugs in Sport. London: Taylor & Francis Inc, 2004.
Знайти повний текст джерелаGeneral, United States Dept of Health and Human Services Office of Inspector. Adolescent steroid use. [Washington, D.C.?]: Dept. of Health and Human Services, Office of Inspector General, 1991.
Знайти повний текст джерелаЧастини книг з теми "Disorder, Doping"
Wada, Y. "Doping and Disorder in Conducting Polymers." In New Horizons in Low-Dimensional Electron Systems, 415–32. Dordrecht: Springer Netherlands, 1992. http://dx.doi.org/10.1007/978-94-011-3190-2_27.
Повний текст джерелаElpelt, R., O. Wolst, H. Willenberg, S. Malzer, and G. H. Döhler. "Disorder-enhanced tunneling transport through doping barriers." In Springer Proceedings in Physics, 849–50. Berlin, Heidelberg: Springer Berlin Heidelberg, 2001. http://dx.doi.org/10.1007/978-3-642-59484-7_403.
Повний текст джерелаLey, L., and M. Hundhausen. "Carrier Recombination Kinetics in Amorphous Doping Superlattices." In Disordered Semiconductors, 551–61. Boston, MA: Springer US, 1987. http://dx.doi.org/10.1007/978-1-4613-1841-5_59.
Повний текст джерелаCohen, J. David, Carol E. Michelson, and James P. Harbison. "Junction Capacitance Studies of Hydrogenated Amorphous Silicon Doping Superiattice Films." In Disordered Semiconductors, 577–85. Boston, MA: Springer US, 1987. http://dx.doi.org/10.1007/978-1-4613-1841-5_61.
Повний текст джерелаElliott, S. R. "A Model for the Electrical Doping of Chalcogenide Glasses by Bismuth." In Disordered Semiconductors, 219–36. Boston, MA: Springer US, 1987. http://dx.doi.org/10.1007/978-1-4613-1841-5_25.
Повний текст джерелаKakalios, J., and R. A. Street. "The Thermal Equilibration Model for Persistent Photoconductivity in Doping Modulated Amorphous Silicon." In Disordered Semiconductors, 529–39. Boston, MA: Springer US, 1987. http://dx.doi.org/10.1007/978-1-4613-1841-5_57.
Повний текст джерелаAbkowitz, Martin A. "Changes in the Photoelectronic Properties of Glassy Chalcogenides Induced by Chemical Doping, Irradiation, and Thermal History." In Disordered Semiconductors, 205–17. Boston, MA: Springer US, 1987. http://dx.doi.org/10.1007/978-1-4613-1841-5_24.
Повний текст джерелаThean, V. Y., S. Nagaraja, and J. P. Leburton. "Three-Dimensional Self-Consistent Simulation of Interface and Dopant Disorders in Delta-Doped Grid-Gate Quantum Dot Devices." In Physical Models for Quantum Dots, 53–77. New York: Jenny Stanford Publishing, 2021. http://dx.doi.org/10.1201/9781003148494-4.
Повний текст джерелаHARIGAYA, Kikuo, Yasushi WADA, and Klaus FESSER. "DOPING DISORDER AND BAND STRUCTURES IN CONJUGATED POLYMERS." In Strongly Coupled Plasma Physics, 255–58. Elsevier, 1990. http://dx.doi.org/10.1016/b978-1-4832-2908-9.50035-4.
Повний текст джерелаDove, James, and Luke Rowe. "Cycling: Attention Deficit Hyperactivity Disorder and Anti-Doping." In Case Studies in Sports Psychiatry, 54–67. Cambridge University Press, 2020. http://dx.doi.org/10.1017/9781108767187.007.
Повний текст джерелаТези доповідей конференцій з теми "Disorder, Doping"
Bussmann, Ezra, Jeffrey Ivie, Justin Koepke, Quinn Campbell, Mitchell Brickson, Peter Schultz, Richard Muller, Andrew Baczewski, Andrew Mounce, and Shashank Misra. "Stochastic atomistic disorder in atomic-precision doping." In Proposed for presentation at the American Physical Society March Meeting held March 15-19, 2021 in Nashville , TN. US DOE, 2020. http://dx.doi.org/10.2172/1831038.
Повний текст джерелаKoepke, Justin, Jeffrey Ivie, Quinn Campbell, Mitchell Brickson, Peter Schultz, Richard Muller, Andrew Baczewski, Andrew Mounce, Ezra Bussmann, and Shashank Misra. "Stochastic atomistic disorder in atomic-precision doping." In Proposed for presentation at the American Physical Society March Meeting 2021 held March 15-19, 2021. US DOE, 2021. http://dx.doi.org/10.2172/1855714.
Повний текст джерелаReichhardt, C. J. Olson, C. Reichhardt, and A. Libal. "Topological defects from doping and quenched disorder in artificial ice systems." In 2010 International Conference on Electromagnetics in Advanced Applications (ICEAA). IEEE, 2010. http://dx.doi.org/10.1109/iceaa.2010.5653065.
Повний текст джерелаChoudhury, Rajul Ranjan, R. Chitra, Lata Panicker, and V. B. Jayakrishnan. "Influence of anthracene doping on the order-disorder phase transition in phenanthrene." In SOLID STATE PHYSICS: PROCEEDINGS OF THE 57TH DAE SOLID STATE PHYSICS SYMPOSIUM 2012. AIP, 2013. http://dx.doi.org/10.1063/1.4790902.
Повний текст джерелаChacaliaza-Ricaldi, J., J. L. Clabel H., G. Lozano C., V. A. G. Rivera, and E. Marega. "Study of optical properties of zinc-tellurite glasses doped with Yb3+, Tm3+ and Er3+: Analysis of the influence of rare-earth ions doping on host matrix modification." In Latin America Optics and Photonics Conference. Washington, D.C.: Optica Publishing Group, 2022. http://dx.doi.org/10.1364/laop.2022.w4a.45.
Повний текст джерелаChen, Ting, Gui-Lan Chang, Lie-Ming Yao, and Wen-Ju Chen. "Radiative and nonradiative transition of Pr3+ and Eu3+ in LaP5O14, LiNbO3, and SBN." In OSA Annual Meeting. Washington, D.C.: Optica Publishing Group, 1987. http://dx.doi.org/10.1364/oam.1987.wf3.
Повний текст джерелаDagesyan, Sarkis A., Denis Presnov, Serafima Y. Ryzhenkova, Ivan V. Sapkov, Viktor R. Gaydamachenko, George A. Zharik, and Anton S. Stepanov. "Fabrication of electrodes for a logic element based on a disordered dopant atoms network." In The International Conference on Micro- and Nano-Electronics 2018, edited by Vladimir F. Lukichev and Konstantin V. Rudenko. SPIE, 2019. http://dx.doi.org/10.1117/12.2522487.
Повний текст джерелаZuppiroli, L. "Role of the dopant counter-ions in the transport and magnetic properties of disordered conducting polymers." In International Conference on Science and Technology of Synthetic Metals. IEEE, 1994. http://dx.doi.org/10.1109/stsm.1994.834650.
Повний текст джерелаKador, L. "Electric-Field Effects on Hole Spectra in Doped Polymers: A Step towards Two-Dimensional Optical Spectroscopy." In Persistent Spectral Hole Burning: Science and Applications. Washington, D.C.: Optica Publishing Group, 1991. http://dx.doi.org/10.1364/pshb.1991.thd4.
Повний текст джерела