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Добірка наукової літератури з теми "Discrete power switching devices"

Автор: Grafiati
Опубліковано: 6 вересня 2023

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Статті в журналах з теми "Discrete power switching devices"

1

Nechay, Bettina, Megan Snook, Harold Hearne, Ty McNutt, Victor Veliadis, Sharon Woodruff, R. S. Howell, David Giorgi, Joseph White, and Stuart Davis. "High-Yield 4H-SiC Thyristors for Wafer-Scale Interconnection." Materials Science Forum 717-720 (May 2012): 1171–74. http://dx.doi.org/10.4028/www.scientific.net/msf.717-720.1171.

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Анотація:
Modern power conditioning systems require large active area devices which can support high currents. Though the breakdown and thermal properties of SiC make it an excellent choice for power switching applications, active area size is currently limited due to material and processing defects. One alternative is to parallel discrete diced die to achieve large active areas. However, this increases cost and complexity through dicing, soldering, and forming multiple wire bonds. Furthermore, paralleling discrete devices increases package volume/weight and reduces power density. To overcome these issues and achieve devices of high current switching capabilities, thyristors were designed and fabricated for the purpose of wafer-scale interconnection - which avoids the need of dicing and bonding and can achieve significant current density improvement over the paralleled diced device approach. Discrete thyristors fabricated for interconnection exhibited excellent yields and good uniformity of both blocking and on-state characteristics, showing great promise for large-scale interconnection.
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2

Zhang, Wenli, Zhengyang Liu, Fred Lee, Shuojie She, Xiucheng Huang, and Qiang Li. "A Gallium Nitride-Based Power Module for Totem-Pole Bridgeless Power Factor Correction Rectifier." International Symposium on Microelectronics 2015, no. 1 (October 1, 2015): 000324–29. http://dx.doi.org/10.4071/isom-2015-wp11.

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Анотація:
The totem-pole bridgeless power factor correction (PFC) rectifier has recently gained popularity for ac-dc power conversion. The emerging gallium nitride (GaN) high-electron-mobility transistor (HEMT), having a small body diode reverse recovery effect and low switching loss, is a promising device for use in the totem-pole approach. The design, fabrication, and thermal analysis of a GaN-based full-bridge multi-chip module (MCM) for totem-pole bridgeless PFC rectifier are introduced in this work. Four cascode GaN devices using the same pair of high-voltage GaN HEMT and low-voltage silicon (Si) power metal-oxide-semiconductor field-effect transistor (MOSFET) chips, as used in the discrete TO-220 package, were integrated onto one aluminum nitride direct-bonded-copper (AlN-DBC) substrate in a newly designed MCM. This integrated power module achieves the same function as four discrete devices mounted on the circuit board. In this module design, the Si and GaN bare die were arranged in a stack-die format for each cascode device to eliminate the critical common source inductance, and thus to reduce parasitic ringing at turn-off transients. In addition, an extra capacitor was added in parallel with the drain-source terminals of the Si MOSFET in each cascode GaN device to compensate for the mismatched junction capacitance between the Si MOSFET and GaN HEMT, which could accomplish the internal zero-voltage switching of the GaN device and reduce its turn-on loss. The AlN-DBC substrate and the flip-chip format were also applied in the module design. This GaN-based MCM shows an improved heat dissipation capability based on the thermal analysis and comparison with the discrete GaN device. The totem-pole bridgeless PFC rectifier built using this integrated power module is expected to have a peak efficiency of higher than 99% with a projected power density greater than 400 W/in3.
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3

Shahed, Md Tanvir, and A. B. M. Harun-Ur Rashid. "An Improved Topology of Isolated Bidirectional Resonant DC-DC Converter Based on Wide Bandgap Transistors for Electric Vehicle Onboard Chargers." International Transactions on Electrical Energy Systems 2023 (March 2, 2023): 1–18. http://dx.doi.org/10.1155/2023/2609168.

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Анотація:
This article proposes an improved topology for an isolated bidirectional resonant DC-DC converter for electric vehicle (EV) onboard chargers. As opposed to the conventional capacitor-inductor-inductor-inductor-capacitor (CLLLC) resonant converter, the proposed converter’s resonant circuit is composed of a capacitor-inductor-inductor-inductor (CLLL) structure, whose inductances, except the capacitor, can be fully integrated with the leakage and mutual inductances of the high-frequency transformer (HF). Therefore, this offers a smaller size, lower costs, minimal power loss, and eventually higher efficiency. Again, the proposed converter design is based on wide bandgap (WBG) transistor switches that operate at MHz-level switching frequency to achieve high power density, high efficiency, and high compactness. A discrete-time proportional integral derivative (PID) controller has been designed using the phase-shifted pulse width modulation (PSPWM) technique to assure closed-loop control of the proposed CLLL converter. The PID controller parameters have been optimized using both the genetic algorithm (GA) and particle swarm optimization (PSO) algorithm and a comparative analysis has been presented between the two algorithms. To achieve fast switching with very little switching loss, the converter is simulated with several wide bandgap (WBG) switching devices. A performance comparison with conventional Si-based switching devices is also provided. A precise power loss model of the semiconductor switches has been devised from the manufacturer’s datasheet to achieve a perfect thermal design for the converter. A 5 kW CLLL converter with an input range of 400–460 V direct current (DC) and an output range of 530–610 V DC, and a switching frequency of 1 MHz has been designed and investigated under various loading scenarios. Gallium nitride (GaN) switching device-based designs achieved the highest levels of efficiency among the switching devices. The efficiency of this device is 97.40 percent in charging mode and 96.67 percent in discharging mode.
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4

Nepsha, Fedor, and Roman Belyaevsky. "Development of Interrelated Voltage Regulation System for Coal Mines Energy Efficiency Improving." E3S Web of Conferences 41 (2018): 03013. http://dx.doi.org/10.1051/e3sconf/20184103013.

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Анотація:
In this paper, the authors propose an algorithm for interrelated voltage regulation in the power supply system of coal mine which allows to provide a normative voltage level and to minimize the level of active power consumption. A feature of the proposed algorithm is a separate consideration of discrete and nondiscrete variables. Nondiscrete variables are represented as a state matrix. The optimization of nondiscrete variables is performed for each state. The algorithm chooses a state with the minimal active power consumption. The obtained values of discrete and nondiscrete variables are transferred in the form of control signals to voltage regulation devices. In this case, the periodicity of the switching is determined by the resource of the on-load tap-changing device. The use of this algorithm will theoretically allow increasing the energy efficiency of power supply systems of coal mines.
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5

Lu, Xiang, Volker Pickert, Maher Al-Greer, Cuili Chen, Xiang Wang, and Charalampos Tsimenidis. "Temperature Estimation of SiC Power Devices Using High Frequency Chirp Signals." Energies 14, no. 16 (August 11, 2021): 4912. http://dx.doi.org/10.3390/en14164912.

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Анотація:
Silicon carbide devices have become increasingly popular in electric vehicles, predominantly due to their fast-switching speeds, which allow for the construction of smaller power converters. Temperature sensitive electrical parameters (TSEPs) can be used to determine the junction temperature, just like silicon-based power switches. This paper presents a new technique to estimate the junction temperature of a single-chip silicon carbide (SiC) metal–oxide–semiconductor field-effect transistor (MOSFET). During off-state operation, high-frequency chirp signals below the resonance frequency of the gate-source impedance are injected into the gate of a discrete SiC device. The gate-source voltage frequency response is captured and then processed using the fast Fourier transform. The data is then accumulated and displayed over the chirp frequency spectrum. Results show a linear relationship between the processed gate-source voltage and the junction temperature. The effectiveness of the proposed TSEPs is demonstrated in a laboratory scenario, where chirp signals are injected in a stand-alone biased discrete SiC module, and in an in-field scenario, where the TSEP concept is applied to a MOSFET operating in a DC/DC converter.
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6

Ren, Jie, and Jian She Tian. "Simulation on Multi-Objective Wind Power Integration Using Genetic Algorithm with Adaptive Weight." Advanced Materials Research 986-987 (July 2014): 529–32. http://dx.doi.org/10.4028/www.scientific.net/amr.986-987.529.

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Анотація:
Aiming at problems which were brought by large-scale wind power integration, and the problem of multi-objective reactive power optimization considering the coexistence of discrete variables and continuous variables, a method of simulation based on genetic algorithm with adaptive weight is brought out. A solving thinking presents that capacitor switching and transformer tap adjusting and other discrete equipments are first, and the action sequence of generator and dynamic reactive power compensation (DRPC) devices and other continuous equipments setting follows, which is presented that optimization problem is decomposed into continuous variable optimization and discrete variable optimization, then they are solved respectively and cross iteration until convergence. In view of the optimization complexity and the coexistence of discrete variables and continuous variables, genetic algorithm with adaptive weight is presented for finding global optimal solution. Case studies show that the proposed thinking and algorithm for solving multi-objective reactive power optimization are reasonable.
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7

Kim, Woo Seok, Minju Jeong, Sungcheol Hong, Byungkook Lim, and Sung Il Park. "Fully Implantable Low-Power High Frequency Range Optoelectronic Devices for Dual-Channel Modulation in the Brain." Sensors 20, no. 13 (June 29, 2020): 3639. http://dx.doi.org/10.3390/s20133639.

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Анотація:
Wireless optoelectronic devices can deliver light to targeted regions in the brain and modulate discrete circuits in an animal that is awake. Here, we propose a miniaturized fully implantable low-power optoelectronic device that allows for advanced operational modes and the stimulation/inhibition of deep brain circuits in a freely-behaving animal. The combination of low power control logic circuits, including a reed switch and dual-coil wireless power transfer platform, provides powerful capabilities for the dissection of discrete brain circuits in wide spatial coverage for mouse activity. The actuating mechanism enabled by a reed switch results in a simplified, low-power wireless operation and systematic experimental studies that are required for a range of logical operating conditions. In this study, we suggest two different actuating mechanisms by (1) a magnet or (2) a radio-frequency signal that consumes only under 300 µA for switching or channel selection, which is a several ten-folds reduction in power consumption when compared with any other existing systems such as embedded microcontrollers, near field communication, and Bluetooth. With the efficient dual-coil transmission antenna, the proposed platform leads to more advantageous power budgets that offer improved volumetric and angular coverage in a cage while minimizing the secondary effects associated with a corresponding increase in transmitted power.
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8

Mishra, Sanhita, Sarat Chandra Swain, and Ritesh Dash. "Switching transient analysis for low voltage distribution cable." Open Engineering 12, no. 1 (January 1, 2022): 29–37. http://dx.doi.org/10.1515/eng-2022-0004.

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Анотація:
Abstract Low voltage cable is primarily connected from the transmission system to several household applications. It is quite common that switching transient in the power system during the energization of the high voltage and low voltage cables have a very crippling effect on the cable as well as the power system components. Hence, an experiment has been performed in the laboratory with a low voltage cable-connected motor system. The experimental results have been validated in the simulation platform, and they are capable of predicting the transient behavior during power cable energization. The effect of transients on power cables during the energization of devices has been investigated in this study in the form of voltage, current, and frequency. Discrete wavelet transform is implemented for the decomposition of the transient current. The generated approximation signal is used to quantify the severity during switching transient condition.
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9

McPherson, B., B. Passmore, P. Killeen, D. Martin, A. Barkley, and T. McNutt. "Package design and development of a low cost high temperature (250°C), high current (50+A), low inductance discrete power package for advanced Silicon Carbide (SiC) and Gallium Nitride (GaN) devices." International Symposium on Microelectronics 2013, no. 1 (January 1, 2013): 000592–97. http://dx.doi.org/10.4071/isom-2013-wa63.

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Анотація:
The demands for high-performance power electronics systems are rapidly surpassing the power density, efficiency, and reliability limitations defined by the intrinsic properties of silicon-based semiconductors. The advantages of post silicon materials, including Silicon Carbide (SiC) and Gallium Nitride (GaN), are numerous, including: high temperature operation, high voltage blocking capability, extremely fast switching, and superior energy efficiency. These advantages, however, are severely limited by conventional power packages, particularly at temperatures higher than 175°C and >100 kHz switching speeds. In this discussion, APEI, Inc. presents the design of a newly developed discrete package specifically intended for high performance, high current (>50A), rapid switching, and extended temperature (>250°C) wide band gap devices which are now readily available on the commercial market at voltages exceeding 1200V. Finite element analysis (FEA) results will be presented to illustrate the modeling process, design tradeoffs, and critical decisions fundamental to a high performance package design. A low profile design focuses on reducing parasitic impedances which hinder high speed switching. A notable increase in the switching speed and frequency reduces the size and volume of associated filtering components in a power converter. Operating at elevated temperatures reduces the requirements of the heat removal system, ultimately allowing for a substantial increase in the power density. Highlights of these packages include the flexibility to house a variety of device sizes and types, co-packaged antiparallel diodes, a terminal layout designed to allow rapid system configuration (for paralleling or creating half- and full-bridge topologies), and a novel wire bondless backside cooled construction for lateral GaN HEMT devices. Specific focus was placed on minimizing the cost of the materials and fabrication processes of the package components. The design of the package is discussed in detail. High temperature testing of a SiC assembly and electrical test results of a high frequency GaN based boost converter will be presented to demonstrate system level performance advantages.
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10

Roberts, J., A. Mizan, and L. Yushyna. "Optimized High Power GaN Transistors." Additional Conferences (Device Packaging, HiTEC, HiTEN, and CICMT) 2015, HiTEN (January 1, 2015): 000195–99. http://dx.doi.org/10.4071/hiten-session6-paper6_1.

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Анотація:
GaN transistors intended for use at 600–900 V and that are capable of providing of 30–100 A are being introduced this year. These devices have a substantially better switching Figure-of-Merit (FOM) than silicon power switches. Rapid market acceptance is expected leading to compound annual growth rates of 85 %. However these devices present new packaging challenges. Their high speed combined with the very high current being switched demands that very low inductance packaging must be combined with highly controlled drive circuitry. While convention, and the usually vertical power device die structure, has largely determined power transistor package formats in the past, the lateral nature of the today GaN devices requires the use of new package types. The new packages have to operate at high temperatures while providing effective heat removal, low inductance, and low series resistance. Because GaN devices are lateral they require the package metal tracks to be integrated within the on-chip tracks to carry the current away from the thin on-chip metal tracks. The new GaN devices are available in two formats: one for use in embedded modular assemblies and the other for use mounted upon conventional circuit board systems. The package intended for discrete printed circuit board (PCB) assemblies has a top side cooling option that simplifies the thermal interface to the heat sink. The paper describes the die layout including the added copper tracks. The corresponding package elements that interface directly with the surface of the die play a vital role in terms of the current handling. They also provide the interface to the external busbars that allow the package to be mounted within, or on PCB. The assembly has been subject to extensive thermal analysis and the performance of a 30 A, 650 V transistor is described.
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Більше джерел

Дисертації з теми "Discrete power switching devices"

1

Chin, Shaoan. "MOS-bipolar composite power switching devices." Diss., Virginia Polytechnic Institute and State University, 1985. http://hdl.handle.net/10919/54275.

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Анотація:
Two MOS-Bipolar composite power semiconductor switching devices are proposed and experimentally demonstrated. These devices feature high voltage and high current capabilities, fast switching speeds, simple gate drive requirements, savings in chip area, reverse bias second breakdown ruggedness and large safe operating areas. Application characteristics of the devices for high frequency power inverter circuits are discussed. Monolithic integration of the two composite devices are also proposed.
Ph. D.
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2

Wang, Jue. "Silicon carbide power devices." Thesis, Heriot-Watt University, 2000. http://hdl.handle.net/10399/579.

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3

Smecher, Graeme. "Discrete-time crossing-point estimation for switching power converters." Thesis, McGill University, 2008. http://digitool.Library.McGill.CA:80/R/?func=dbin-jump-full&object_id=115995.

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Анотація:
In a number of electrical engineering problems, so-called "crossing points" -- the instants at which two continuous-time signals cross each other -- are of interest. Often, particularly in applications using a Digital Signal Processor (DSP), only periodic samples along with a partial statistical characterization of the signals are available. In this situation, we are faced with the following problem: Given limited information about these signals, how can we efficiently and accurately estimate their crossing points?
For example, an audio amplifier typically receives its input from a digital source decoded into regular samples (e.g. from MP3, DVD, or CD audio), or obtained from a continuous-time signal using an analog-to-digital converter (ADC). In a switching amplifier based on Pulse-Width Modulation (PWM) or Click Modulation (CM), a signal derived from the sampled audio is compared against a deterministic reference waveform; the crossing points of these signals control a switching power stage. Crossing-point estimates must be accurate in order to preserve audio quality. They must also be simple to calculate, in order to minimize processing requirements and delays.
We consider estimating the crossing points of a known function and a Gaussian random process, given uniformly-spaced, noisy samples of the random process for which the second-order statistics are assumed to be known. We derive the Maximum A-Posteriori (MAP) estimator, along with a Minimum Mean-Squared Error (MMSE) estimator which we show to be a computationally efficient approximation to the MAP estimator.
We also derive the Cramer-Rao bound (CRB) on estimator variance for the problem, which allows practical estimators to be evaluated against a best-case performance limit. We investigate several comparison estimators chosen from the literature. The structure of the MMSE estimator and comparison estimators is shown to be very similar, making the difference in computational expense between each technique largely dependent on the cost of evaluating various (generally non-linear) functions.
Simulations for both Pulse-Width and Click Modulation scenarios show the MMSE estimator performs very near to the Cramer-Rao bound and outperforms the alternative estimators selected from the literature.
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4

Witcher, Joseph Brandon. "Methodology for Switching Characterization of Power Devices and Modules." Thesis, Virginia Tech, 2003. http://hdl.handle.net/10919/31205.

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Анотація:
In modern power electronics systems there is a growing trend to replace discrete devices with integrated power electronic modules (IPEMs). In this way, several components can be replaced by a single component. By using prefabricated building blocks, the engineer simplifies the design process, reducing the total design cycle time and cost. By integrating only the necessary components to provide power switching, the end user has a pre-optimized building block with the flexibility to be used in a large variety of applications. Besides simplifying the design process, power modules should be designed in such a way as to improve the performance of the power converter. This begs the question as to how best to judge if one IPEM has better performance than another or better performance than its discrete counterpart. In analyzing a converterâ s performance, popular criteria include efficiency, power density, device stresses, and EMI. All of these criteria are strongly linked to the switching characteristics of the IPEMâ s power devices. This thesis is a comprehensive study of the requirements for obtaining and analyzing the switching characteristics of the IPEMâ s power devices. It outlines the important switching characteristics and the implications of each characteristic on converter performance. It deals with the relevant measurement issues, specifically addressing the minimum requirements, which sensors are most suitable, and problems leading to inaccurate data. A parametric study is conducted to determine the effects of several circuit and operating parameters on the switching characteristics. Using the resulting data and the knowledge from the measurement study, we can decide how to design the testbed layout, what operating conditions should be chosen for testing, and what effects of the tester must be decoupled to truly see the effects of IPEM design. The thesis concludes with the design of standard test equipment and procedures.
Master of Science
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5

Kim, Alexander. "Switching-Loss Measurement of Current and Advanced Switching Devices for Medium-Power Systems." Thesis, Virginia Tech, 2011. http://hdl.handle.net/10919/34568.

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Анотація:
The ultimate goal for power electronics is to convert one form of raw electrical energy into a usable power source with the lowest amount of loss. A considerable portion of these losses are due to the use of switching devices themselves. Device losses can be apportioned to conduction loss and switching loss. It is commonly known and practiced that conduction loss can be reduced by driving MOSFETs and IGBTs harder with gate voltages closer to the maximum rating. This lowers the voltage across the device in the path of the amplified current and ultimately reduces power dissipated by the device. However, switching losses of these devices are not as easily characterized or intuitive for power electronics designers. This is mainly due to the fact that the parasitic reactive elements are nonlinear and not as readily documented as I-V characteristics of a given power device. For example, non-linear parasitic capacitances in the device are given for a fixed frequency across a voltage sweep. Parasitic inductance is typically not even mentioned in the datasheet. The switching losses of these devices depend on these mysterious reactances. A functional way to obtain estimates of switching loss is to test the device under the conditions the device will be used. However, this task must be approached carefully in order to accurately measure the voltage and current of the device. Measurement devices also have parasitic impedances of their own that can add or subtract to switching energy during turn on or turn off and create misleading results. Preliminary testing was performed on multiple devices. After preliminary testing and deliberation, a device-measurement printed circuit board was made to easily replace switching devices of the same package. This thesis presents switching loss measurements of medium-power capable devices in the tens of kW range. It also aims to attribute characteristics of switching voltage and current waveforms to the internal structure of the devices. The device tester designed is versatile since the output buffer of the gate drive is comprised of D-PAK totem pole BJTs. This is able to drive both current and voltage driven devices, i.e. SiC J-FETs (current-driven) and other voltage-driven devices (i.e. MOSFETs and IGBTs). It also allows for TO-220 and TO-247 packaged power diodes.
Master of Science
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6

Finney, Stephen Jon. "The reduction of switching losses in power semiconductor devices." Thesis, Heriot-Watt University, 1994. http://hdl.handle.net/10399/1345.

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7

Finney, Adrian David. "Physical constraints on the switching speeds of power transistors." Thesis, Lancaster University, 1990. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.306126.

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8

Chen, Cheng. "Studies of SiC power devices potential in power electronics for avionic applications." Thesis, Université Paris-Saclay (ComUE), 2016. http://www.theses.fr/2016SACLN045.

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Анотація:
Mes travaux de thèse dans les laboratoires SATIE de ENS de Cachan et Ampère de l’INSA de Lyon se sont déroulés dans le cadre du projet Gestion OptiMisée de l'Energie (GENOME) pour étudier le potentiel de certains composants de puissance (JFET, MOSFET et BJT) en carbure de silicium (SiC) dans des convertisseurs électroniques de puissance dédiés à des applications aéronautiques suite au développement de l'avion plus électrique. La première partie de mes travaux étudie la robustesse de MOSFET et BJT en SiC soumis à des régimes de court circuit. Pour les MSOFET SiC, en soumettant ces transistors à la répétition de plusieurs courts-circuits, nous observons une évolution du courant de fuite de grille qui semble être un bon indicateur de vieillissement. Nous définissons une énergie critique répétitive pour évaluer la robustesse à la répétition de plusieurs courts-circuits. Aucun effet significatif de la température ambiante n’a pu être mis en évidence sur la robustesse des MOSFET et BJT SiC sous contraintes de court-circuit. Pour les MOSFET, nous avons également constaté une élévation significative du courant de fuite de grille en augmentant de 600V à 750V la tension, ce qui se traduit également par une défaillance plus rapide. Après ouverture des boîtiers des MOSFET Rohm ayant présenté un court-circuit entre grille et source après défaillance, on remarque une fusion de la métallisation de source qui vient effectivement court-circuiter grille et source. Dans ce mode de défaillance particulier, le court-circuit entre grille et source auto-protège la puce en lui permettant de s’ouvrir.La deuxième partie de ce mémoire est consacrée à l’étude de JFET, MSOFET et BJT SiC en régime d’avalanche. Les JFET de SemiSouth et les BJT de Fairchild présentent une bonne robustesse à l’avalanche. Mais le test d'avalanche révèle la fragilité du MOSFET Rohm puisqu’il entre en défaillance avant d’entrer en régime d’avalanche. La défaillance du MOSFET Rohm et sa faible robustesse en régime d’avalanche sont liées à l’activation du transistor bipolaire parasite. Le courant d'avalanche n’est qu’une très faible partie du courant dans l’inductance et circule du drain/collecteur à la grille/base pour maintenir le transistor en régime linéaire. Une résistance de grille de forte valeur diminue efficacement le courant d'avalanche à travers la jonction drain-grille pour le JFET.La troisième partie concerne l’étude de la commutation de BJT SiC à très haute fréquence de découpage. Nous avons dans un premier temps cherché à valider des mesures de pertes par commutation. Après avoir vérifié l'exactitude de la méthode électrique par rapport à une méthode calorimétrique simplifiée, nous montrons que la méthode électrique est adaptée à l’estimation des pertes de commutation mais nécessite beaucoup d’attention. En raison de mobilité élevée des porteurs de charge dans le SiC, nous montrons que le BJT SiC ne nécessite pas l’utilisation de diode d’anti-saturation. Enfin, aucune variation significative des pertes de commutation n’a pu être constatée sur une plage de température ambiante variant de 25°C à 200°C.La quatrième partie concentre l’étude du comportement de MOSFET SiC sous contraintes HTRB (High Temperature Reverse Bias) et dans une application diode-less dans laquelle les transistors conduisent un courant inverse à travers le canal, exception faite de la phase de temps mort pendant laquelle c’est la diode de structure qui assurera la continuité du courant dans la charge. Les résultats montrent que la diode interne ne présente aucune dégradation significative lors de la conduction inverse des MOSFET. Le MOSFET Cree testé montre une dérive de la tension de seuil et une dégradation de l’oxyde de grille qui sont plus significatives lors des essais dans l’application diode-less que sous des tests HTRB. La dérive de la tension de seuil est probablement due au champ électrique intense régnant dans l’oxyde et aux pièges de charge dans l'oxyde de grille
My PhD work in laboratories SATIE of ENS de Cachan and Ampère of INSA de Lyon is a part of project GEstioN OptiMisée de l’Energie (GENOME) to investigate the potential of some Silicon carbide (SiC) power devices (JFET, MOSFET and BJT) in power electronic converters dedicated to aeronautical applications for the development of more electric aircraft.The first part of my work investigates the robustness of MOSFET and SiC BJT subjected to short circuit. For SiC MOSFETs, under repetition of short-term short circuit, a gate leakage current seems to be an indicator of aging. We define repetitive critical energy to evaluate the robustness for repetition of short circuit. The effect of room temperature on the robustness of SiC MOSFET and BJT under short circuit stress is not evident. The capability of short circuit is not improved by reducing gate leakage current for MOSFET, while BJT shows a better robustness by limiting base current. For MSOFET, a significant increase in gate leakage current accelerates failure for DC voltage from 600V to 750V. After opening Rohm MOSFETs with a short circuit between gate and source after failure, the fusion of metallization is considered as the raison of failure. In this particular mode of failure, the short circuit between gate and source self-protects the chip and opens drain short current.The second part of the thesis is devoted to the study of SiC JFET, MSOFET and BJT in avalanche mode. The SemiSouth JFET and Fairchild BJT exhibit excellent robustness in the avalanche. On the contrary, the avalanche test reveals the fragility of Rohm MOSFET since it failed before entering avalanche mode. The failure of Rohm MOSFET and its low robustness in avalanche mode are related to the activation of parasitic bipolar transistor. The avalanche current is a very small part of the current in the inductor. It flows from the drain/collector to the gate/base to drive the transistor in linear mode. A high-value gate resistance effectively reduces the avalanche current through the drain-gate junction to the JFET.The third part of this thesis concerns the study of switching performance of SiC BJT at high switching frequency. We initially attempted to validate the switching loss measurements. After checking the accuracy of the electrical measurement compared to calorimetric measurement, electrical measurement is adopted for switching power losses but requires a lot of attention. Thanks to high carrier charge mobility of SiC material, SiC BJT does not require the use of anti-saturation diode. Finally, no significant variation in switching losses is observed over an ambient temperature range from 25°C to 200°C.The fourth part focuses on the study of SiC MOSFET behavior under HTB (High Temperature Reverse Bias) and in diode-less application in which the transistors conduct a reverse current through the channel, except for the dead time during which the body diode ensure the continuity of the current in the load. The results show that the body diode has no significant degradation when the reverse conduction of the MOSFET. Cree MOSFET under test shows a drift of the threshold voltage and a degradation of the gate oxide which are more significant during the tests in the diode-less application than under HTRB test. The drift of the threshold voltage is probably due to intense electric field in the oxide and the charge traps in the gate oxide
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9

Chen, Wei. "Fast switching low power loss devices for high voltage integrated circuits." Thesis, University of Cambridge, 1995. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.262863.

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10

Sukumaran, Deepti. "Design and Fabrication of Optically Activated Silicon Carbide High-Power Switching Devices." University of Cincinnati / OhioLINK, 2001. http://rave.ohiolink.edu/etdc/view?acc_num=ucin1007158711.

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Книги з теми "Discrete power switching devices"

1

J, Watson. Analog and switching circuit design: Using integrated and discrete devices. Bristol: Adam Hilger, 1987.

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2

J, Watson. Analog and switching circuit design: Using integrated and discrete devices. 2nd ed. New York: Wiley, 1989.

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3

J, Watson. Analog and switching circuit design: Using integrated and discrete devices. 2nd ed. Chichester: Wiley, 1991.

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4

Jamieson, David James. The thermal simulation of power electronic switching devices and their associated heatsinks. Salford: University of Salford, 1995.

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5

Nelms, R. M. Design of power electronics for TVC & EMA systems: Final report. [Washington, DC: National Aeronautics and Space Administration, 1994.

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6

W, Flynn B., and Macpherson D. E, eds. Switched mode power supplies: Design and construction. Taunton, England: Research Studies Press, 1992.

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7

Whittington, H. W. Switched mode power supplies: Design and construction. 2nd ed. Taunton, Somerset, England: Research Studies Press, 1997.

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8

Prohorov, Viktor. Semiconductor converters of electrical energy. ru: INFRA-M Academic Publishing LLC., 2020. http://dx.doi.org/10.12737/1019082.

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The textbook considers the need, principles and methods of mutual conversion of parameters of electric energy at DC and AC for stationary and Autonomous objects. Features of operation of power electronics elements in specific conditions of their continuous high-frequency switching are described. Low-current control systems that provide the necessary logic for the operation of Executive power devices of converters are considered. A large number of specific practical electrical diagrams of electric energy converters are given. It is intended for students studying in the direction of 13.03.02 "electric power and electrical engineering". It can be useful for graduate students and specialists involved in the development and operation of electric power converters.
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9

The Switching Function (Circuits, Devices and Systems) (Circuits, Devices and Systems). Institution of Engineering and Technology, 2006.

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10

Gurevich, Vladimir. Electronic Devices on Discrete Components for Industrial and Power Engineering. Taylor & Francis Group, 2018.

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Частини книг з теми "Discrete power switching devices"

1

Bausière, Robert, Francis Labrique, and Guy Séguier. "Switching Power Semiconductor Devices." In Power Electronic Converters, 17–109. Berlin, Heidelberg: Springer Berlin Heidelberg, 1993. http://dx.doi.org/10.1007/978-3-642-52454-7_2.

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2

Isberg, Jan. "High-Power Switching Devices." In CVD Diamond for Electronic Devices and Sensors, 275–88. Chichester, UK: John Wiley & Sons, Ltd, 2009. http://dx.doi.org/10.1002/9780470740392.ch12.

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3

Niayesh, Kaveh, and Magne Runde. "Application of Switching Devices in Power Networks." In Power Switching Components, 59–133. Cham: Springer International Publishing, 2017. http://dx.doi.org/10.1007/978-3-319-51460-4_3.

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4

Niayesh, Kaveh, and Magne Runde. "Future Trends and Developments of Power Switching Devices." In Power Switching Components, 225–46. Cham: Springer International Publishing, 2017. http://dx.doi.org/10.1007/978-3-319-51460-4_6.

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5

Williams, B. W. "Cooling of Power Switching Semiconductor Devices." In Power Electronics, 90–110. London: Macmillan Education UK, 1987. http://dx.doi.org/10.1007/978-1-349-18525-2_5.

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6

Niayesh, Kaveh, and Magne Runde. "Service Experience and Diagnostic Testing of Power Switching Devices." In Power Switching Components, 187–223. Cham: Springer International Publishing, 2017. http://dx.doi.org/10.1007/978-3-319-51460-4_5.

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7

Chvála, Aleš, Davide Cristaldi, Daniel Donoval, Giuseppe Greco, Juraj Marek, Marián Molnár, Patrik Príbytný, Angelo Raciti, and Giovanni Vinci. "Discrete Power Devices and Power Modules." In Smart Systems Integration and Simulation, 91–143. Cham: Springer International Publishing, 2016. http://dx.doi.org/10.1007/978-3-319-27392-1_5.

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Williams, B. W. "Power Switching Devices and their Static Electrical Characteristics." In Power Electronics, 16–52. London: Macmillan Education UK, 1987. http://dx.doi.org/10.1007/978-1-349-18525-2_3.

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9

Batarseh, Issa, and Ahmad Harb. "Review of Switching Concepts and Power Semiconductor Devices." In Power Electronics, 25–91. Cham: Springer International Publishing, 2017. http://dx.doi.org/10.1007/978-3-319-68366-9_2.

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10

Williams, B. W. "Electrical Ratings and Characteristics of Power Semiconductor Switching Devices." In Power Electronics, 53–89. London: Macmillan Education UK, 1987. http://dx.doi.org/10.1007/978-1-349-18525-2_4.

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Тези доповідей конференцій з теми "Discrete power switching devices"

1

Calder, H., M. Shahbazi, and A. Horsfall. "Optimal device selection tool for discrete SiC MOSFETs considering switching loss challenges of paralleled devices." In 11th International Conference on Power Electronics, Machines and Drives (PEMD 2022). Institution of Engineering and Technology, 2022. http://dx.doi.org/10.1049/icp.2022.1150.

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2

Kearney, Ian. "Analysis of Power MOSFET Active Temperature Cycling Failures." In ISTFA 2013. ASM International, 2013. http://dx.doi.org/10.31399/asm.cp.istfa2013p0283.

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Abstract Performance degradation due to fatigue accumulation from the repetitive switching of high load current is critical to understanding robust power MOSFET product design. In this paper, we present a novel high-current-temperature (HCT) characterization system used to investigate real world powercycling failure mechanisms. The effects of electric current Joule heating, non-uniform temperature distribution and performance deterioration of discrete power devices are discussed. Thermal fatigue of solder joints and thick aluminum wire bonding are common weak spots with regard to power-cycling capability. We report performance failure mechanisms and discuss the superposition of contributing factors in defining root cause. Results discuss various package influences as part of a robust power MOSFET development process.
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3

Yang, Yizhang, Sridhar Sundaram, Gamal Refai-Ahmed, and Maxat Touzelbaev. "Fast Prediction of Temperature Evolution in Electronic Devices for Run-Time Thermal Management Applications." In ASME 2010 International Mechanical Engineering Congress and Exposition. ASMEDC, 2010. http://dx.doi.org/10.1115/imece2010-40462.

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Increase of non-uniform power density and high switching frequency has presented new challenges in predicting transient temperature response to fast-changing power inputs in advanced electronic devices. While the computational effort with direct calculation through the finite element model (FEM) is expensive, various methods of model reduction with drastically improved computing speed have been developed for calculation of dynamic thermal responses of the electronic systems. However, those methods’ still-considerable computational time consumption inhibits their practices in real-time temperature prediction and dynamic thermal management (DTM) applications. This work presents a fast algorithm for predicting temperature evolution in electronic devices subjected to multiple heat source excitations. It utilizes the equivalent thermal RC network for model reductions, and adopts recursive infinite impulse response (IIR) digital filters for accelerated computation in discrete time-domain. The algorithm is validated by comparison to existing convolution integral methods, yielding excellent agreement with several orders of magnitude improvement in computation efficiency. Due to its simplicity in implementation, the algorithm is very suitable for run-time evaluation of temperature response for dynamic power management applications.
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4

Gradl, Christoph, Ivo Kovacic, and Rudolf Scheidl. "Development of an Energy Saving Hydraulic Stepper Drive." In 8th FPNI Ph.D Symposium on Fluid Power. American Society of Mechanical Engineers, 2014. http://dx.doi.org/10.1115/fpni2014-7809.

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Stepper drives can realize quite precise, incremental motions without position sensors. Sensorless hydraulic motion control is strongly demanded by industry and, therefore, is an established idea in hydraulics for a while. Some concepts have been proposed in the past and a few of them have also been realized and applied in specific cases. But it is expected that digital hydraulics — due to its intrinsic discrete nature — can create new, more advantageous hydraulic versions of stepper drives. In this paper, a new stepper drive is presented and investigated. It creates the steps by fixed fluid quanta generated by a so called digital flow unit. That unit is realized by a hydraulic cylinder-piston unit which displaces a defined fluid quantum by each limited forward stroke of that piston. The unit is controlled by a fast switching valve which connects the piston areas alternately with the pressure-, tank- and output-line. The return motion is generated by a return spring. Energy saving is accomplished by storing the supply pressure surplus intermediately in the kinetic energy of the piston and converting that energy to displace part of the quantum to the consumer line without hydraulic energy from the supply line. Different detail concepts of this stepper drive are theoretically assessed. The transient behavior, the performance characteristics and the energy efficiency of a preferred concept are investigated by mathematical modeling and simulation. Furthermore, the main system parameters are identified and corresponding basic dimensioning rules are presented. In a second step, the influence of finite switching times of the valves, the hydraulic impedances of the various flow channels and of the dead volumes and the dynamical properties of the hydraulic cylinder attached to the device, are discussed.
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5

Novotny, R. A., R. L. Pawelski, R. S. Veach, and A. L. Lentine. "Demonstration of a free-space 2×2 switching mode using symmetric self-electro-optic-effect device modulators and detectors." In OSA Annual Meeting. Washington, D.C.: Optica Publishing Group, 1990. http://dx.doi.org/10.1364/oam.1990.wb1.

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A 2 × 2 photonic switching node was demonstrated that switched two 140 Mbps extended quality television signals with error-free performance, using discrete optical components, and extensible arrays of symmetric self-electro-optic-effect device (S-SEED) differential modulators and detectors.1 The switch consisted of two electronically controlled differential GaAs quantum well modulator arrays, one differential GaAs quantum well detector array, and a space invariant interconnection. Laser diodes were used for the optical interconnections. Each differential modulator (detector) consisted of two serially connected MQW diodes (i.e., a symmetric SEED) with the modulating voltage applied to (modulated current detected from) a center tap between the diodes. Two S-SEED cells were used within each 2 × 4 array spaced on a 30 × 40-μm pitch with two 10-μm round windows for each MQW diode. The system was tolerant to laser noise and remained aligned and stable. We show switch performance (speed, cross-talk, BER, energy & power dissipation) and describe possible extensions of this system for backplane (board-to-board) interconnection.
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6

Aceves, A. B., C. De Angelis, G. G. Luther, Alexander M. Rubenchik, and Sergei K. Turitsyn. "Steering of Multidimensional Solitons in Nonlinear Fiber Arrays." In Nonlinear Guided Waves and Their Applications. Washington, D.C.: Optica Publishing Group, 1995. http://dx.doi.org/10.1364/nlgw.1995.nsab1.

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Passive or active waveguides coupled to form an array have many applications [1, 2]. Because the output characteristics can be changed by tuning the input power, a waveguide array based on optical fibers called the Nonlinear Fiber Array (NFA) may permit ultrafast, all-optical switching. Such a device was first proposed in Ref. [3]. Recently it was shown that when group velocity dispersion becomes important in NFA’s, nonlinearity, dispersion, and the discrete effect of linear coupling along the array balance permitting the stable propagation of multidimensional light bullets [4]. In this paper we show that these beams can be exploited in NFA’s for all-optical-information-processing. To steer a signal on the dispersive NFA, phase shifts can be introduced to initiate translation along the array of fibers. As the light energy propagates, a quasi-collapse phenomenon begins to localize it. Once the energy is localized over a few fibers, its translation along the array is stopped. The output fiber is selected by the combination of launch speed, which is a function of the gradient of the phase shift along the array, and localization rate, which is a function of the initial power.
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7

Robertson, B., J. Turunen, H. Ichikawa, J. M. Miller, M. R. Taghizadeh, and A. Vasara. "Hybrid Kinoform Fan-Out Elements in Dichromated Gelatin." In OSA Annual Meeting. Washington, D.C.: Optica Publishing Group, 1990. http://dx.doi.org/10.1364/oam.1990.pdp17.

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The successful construction of a digital optical processor or photonic switching network depends on our ability to efficiently power and interconnect together arrays of optical logic devices. Thus components capable of generating, re-routing and fanning-out arrays of beams must be available if full advantage is to be taken of the parallelism and improved communications inherent in optics. This has led to a great deal of effort being invested into the design and fabrication of optical interconnects using, for example, bulk optics, computer generated holograms and volume phase holographic optical elements. At present, one of the most promising techniques is based on CGH‘s which have a continuous phase profile. Such holographic gratings, commonly referred to as kinoforms, can theoretically reconstruct arrays of equal intensity light beams with a diffraction efficiency approaching 100%. These CGH's are therefore ideal for many applications, ie array generation and fan-out, both of which are vital for the construction of a digital optical processor or a photonic switching network. The fabrication of optical elements which have continuous surface-relief or refractive index profiles is, unfortunately, an extremely demanding task. Much of the recent work in the field of array generation has therefore been devoted to the design of kinoforms which have only a few, discrete, equally spaced phase levels. Recently however we have demonstrated an alternative technique of fabricating kinoforms which is based on the concept of the hybrid hologram1. This is a volume phase hologram recorded optically using a plane reference beam and an object wavefront generated from a binary amplitude CGH. By spatially filtering out all but the first diffraction order of the CGH it is possible to generate a uniform amplitude, continuous phase wavefront at the hologram plane, a form of wavefront ideal for recording a volume phase hologram.
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8

"Discrete power semiconductor devices." In 2004 IEEE 35th Annual Power Electronics Specialists Conference (IEEE Cat. No.04CH37551). IEEE, 2004. http://dx.doi.org/10.1109/pesc.2004.1355299.

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9

Ishida, Masahiro, Yasuhiro Uemoto, Tetsuzo Ueda, Tsuyoshi Tanaka, and Daisuke Ueda. "GaN power switching devices." In 2010 International Power Electronics Conference (IPEC - Sapporo). IEEE, 2010. http://dx.doi.org/10.1109/ipec.2010.5542030.

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10

Rajkumar, N., J. N. McMullin, B. P. Keyworth, and R. I. MacDonald. "3 X 3 Optoelectronic Cross-Bar Switch Using Vertical Cavity Surface Emitting Laser Arrays." In Diffractive Optics and Micro-Optics. Washington, D.C.: Optica Publishing Group, 1996. http://dx.doi.org/10.1364/domo.1996.dmd.4.

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In an electronic space division switch matrix, the system performance at high frequencies is subject to degradation because of crosstalk due to electromagnetic coupling in adjacent signal paths. A substantial improvement in performance can be obtained if the incoming signals were optical and the outgoing electrical with optical detectors acting as the cross points[1,2]. As the incoming paths are optical, a great degree of immunity to crosstalk can be gained, and the crosstalk that may arise in the outgoing electrical lines could be reduced by proper shielding as the adjacent conductor lines are no longer electrically connected. Such switching matrices may also be applied in high speed analog and digital signal processing applications [3,4]. The signal distribution in optoelectronic switches has been done in the past using 1:N multimode fibre splitters and butt-coupling the fibres to the MSM detectors by prealigning the fibres in etched silicon V-groove arrays. Two drawbacks of the fibre distribution method are that it is very fragile and handling large number of fibres is difficult and time-consuming. Alternative approaches are the use of integrated waveguide devices for power division or free space interconnect. A 3X3 free space switch prototype using three discrete lasers has been previously reported [5]. In this paper a modified version using vertical cavity surface emitting lasers (VCSEL’s) driven by electrical inputs is described.
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Звіти організацій з теми "Discrete power switching devices"

1

Baliga, B. J., B. Vijay, P. M. Shenoy, R. F. Davis, and H. S. Tomozawa. SiC Discrete Power Devices. Fort Belvoir, VA: Defense Technical Information Center, January 1997. http://dx.doi.org/10.21236/ada319706.

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2

Baliga, B. J., R. K. Chilukuri, P. M. Shenoy, B. Vijay, and R. F. Davis. SiC Discrete Power Devices. Fort Belvoir, VA: Defense Technical Information Center, January 1999. http://dx.doi.org/10.21236/ada358651.

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3

Chilukuri, Ravi K., and B. J. Baliga. SiC Discrete Power Devices. Fort Belvoir, VA: Defense Technical Information Center, January 2001. http://dx.doi.org/10.21236/ada389252.

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4

Cooper, James A., Michael A. Capano, Leonard C. Feldman, Marek Skowronski, and John R. Williams. Development of Process Technologies for High-Performance MOS-Based SiC Power Switching Devices. Fort Belvoir, VA: Defense Technical Information Center, August 2007. http://dx.doi.org/10.21236/ada473280.

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